CN102136495B - Structure of semiconductor high-voltage device and manufacturing method thereof - Google Patents
Structure of semiconductor high-voltage device and manufacturing method thereof Download PDFInfo
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- CN102136495B CN102136495B CN 201010100430 CN201010100430A CN102136495B CN 102136495 B CN102136495 B CN 102136495B CN 201010100430 CN201010100430 CN 201010100430 CN 201010100430 A CN201010100430 A CN 201010100430A CN 102136495 B CN102136495 B CN 102136495B
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Abstract
The invention discloses a structure of a semiconductor high-voltage device. The semiconductor high-voltage device is of a bilaterally symmetrical structure; a high-voltage transistor structure is arranged close to the axis of symmetry; multiple concentric annular PN nodes are arranged on the periphery of the high-voltage transistor; a terminal annular groove concentric with the annular PN nodes is arranged at the outer side of the outmost PN node; and silicon oxide is filled in the terminal annular groove. The invention also discloses a manufacturing method of the structure of the semiconductor high-voltage device. The method comprises the following steps: performing photoetching and etching on a silicon substrate to form a terminal annular groove; filling silicon oxide in the terminal annular groove, and removing the silicon oxide on the surface by a back-etching process; and finishing the production process according to the normal process for manufacturing a power MOS (metal oxide semiconductor) device. According to the invention, a terminal annular groove is arranged at the periphery of the annular PN nodes so that the number of the annular PN nodes can be greatly reduced, a relatively small chip area is occupied, a better voltage resistance of the device is obtained, and the manufacturing cost of the device is remarkably lowered.
Description
Technical field
The present invention relates to a kind of structure of semiconductor device, especially a kind of structure of semiconductor high-voltage device.The invention still further relates to a kind of manufacture method of structure of semiconductor high-voltage device.
Background technology
Existing high voltage power device terminal structure is multilayer ring-type PN junction, and transverse p/n junction is nearly 9～10 sometimes.The structure of existing high voltage power device is symmetrical structure, and its each semi-symmetric structure comprises the high-voltage transistor structure near the symmetry axis position as shown in Figure 1, and at a plurality of concentric ring-type PN junction of the periphery of described high voltage transistor.Described high-voltage transistor structure comprises the structures such as P type tagma, groove, source electrode, and the ring-type PN junction is included in high-voltage transistor structure wherein.Comprised 6 transverse p/n junctions among Fig. 1, the purpose that increases PN junction is to improve the withstand voltage properties of high tension apparatus.But existing structure takies larger chip area, and the quantity of PN junction is more, and the chip area that takies is just larger, and then causes the device manufacturing cost to increase.
Summary of the invention
Technical problem to be solved by this invention provides structure of a kind of semiconductor high-voltage device and preparation method thereof, only needs less bulk just can reach enough withstand voltage propertiess, thereby reduces the device manufacturing cost.
For solving the problems of the technologies described above, the technical scheme of the structure of semiconductor high-voltage device of the present invention is, described semiconductor high-voltage device is symmetrical structure, position near symmetry axis is provided with high-voltage transistor structure, be provided with a plurality of concentric ring-type PN junctions in the periphery of described high voltage transistor, in outermost PN junction arranged outside the end ring groove concentric with the ring-type PN junction arranged, be filled with silica in the described end ring groove.
The invention also discloses a kind of manufacture method of structure of above-mentioned semiconductor high-voltage device, its technical scheme is to comprise first photoetching and etching formation end ring groove on silicon substrate; Then in the end ring groove, fill silica, and remove the silica on surface with returning carving technology, expose epitaxial surface, guarantee the smooth of silicon chip surface; Then finish production process according to the normal process flow of power MOS (Metal Oxide Semiconductor) device manufacturing.
The present invention so that the quantity of ring-type PN junction can greatly reduce, only takies less chip area, and has reached better device withstand voltage performance by in ring-type PN junction periphery the end ring groove being set, and greatly reduces the manufacturing cost of device.
Description of drawings
The present invention is further detailed explanation below in conjunction with drawings and Examples:
Fig. 1 is the antimeric structural representation in existing semiconductor high-voltage device right side;
Fig. 2 is the antimeric structural representation in semiconductor high-voltage device of the present invention right side.
Embodiment
The invention discloses a kind of structure of semiconductor high-voltage device, described semiconductor high-voltage device is symmetrical structure, position near symmetry axis is provided with high-voltage transistor structure, be provided with a plurality of concentric ring-type PN junctions in the periphery of described high voltage transistor, whenever the symmetrical structure of half as shown in Figure 2, described high-voltage transistor structure comprises P type tagma, groove, the structures such as source electrode, and the ring-type PN junction is included in high-voltage transistor structure wherein, in outermost PN junction arranged outside the end ring groove concentric with the ring-type PN junction arranged, be filled with silica in the described end ring groove.
The number of described ring-type PN junction is 3.
The invention also discloses a kind of manufacture method of structure of above-mentioned semiconductor high-voltage device, comprise first photoetching and etching formation end ring groove on silicon substrate; Then in the end ring groove, fill silica, and remove the silica on surface with returning carving technology, expose epitaxial surface, guarantee the smooth of silicon chip surface; Then finish production process according to the normal process flow of power MOS (Metal Oxide Semiconductor) device manufacturing.
Outermost one deck terminal structure has adopted the technique that the deep trench oxygenates is filled among the present invention, can improve lateral breakdown voltage like this, thereby improve the voltage endurance of whole device.
In traditional end ring structure, the outermost end ring bottom electrical line of force is more concentrated, thereby causes electric field strength to increase, and voltage endurance capability is limited.Compared with prior art, the deep trench that the present invention adds a fill oxide in the end ring outside can be evened up evacuation with intensive power line, thereby reduces electric field strength herein, improves the voltage endurance of device.
In sum, the present invention so that the quantity of ring-type PN junction can greatly reduce, only takies less chip area, and has reached better device withstand voltage performance by in ring-type PN junction periphery the end ring groove being set, and greatly reduces the manufacturing cost of device.
Claims (3)
1. the structure of a semiconductor high-voltage device, it is characterized in that, described semiconductor high-voltage device is symmetrical structure, position near symmetry axis is provided with high-voltage transistor structure, be provided with a plurality of concentric ring-type PN junctions in the periphery of described high voltage transistor, in outermost PN junction arranged outside the end ring groove concentric with the ring-type PN junction arranged, fill fully with silica in the described end ring groove; Each described ring-type PN junction is formed in the N-type epitaxial loayer, and the p type island region of each described ring-type PN junction is by being formed in the described N-type epitaxial loayer and being that the P type doped region that extends certain depth from the surface of described N-type epitaxial loayer toward the bottom forms; The N-type district of each described ring-type PN junction by on the lateral attitude and the part of the adjacent described N-type epitaxial loayer of described p type island region form; Described end ring groove is the groove that the described N-type epitaxial loayer of part is removed rear formation, and the degree of depth of described end ring groove is greater than the degree of depth of the p type island region of each described ring-type PN junction.
2. the structure of semiconductor high-voltage device according to claim 1 is characterized in that, the number of described ring-type PN junction is 3.
3. the manufacture method of the structure of a semiconductor high-voltage device as claimed in claim 1 or 2 is characterized in that, comprises first photoetching and etching formation end ring groove on silicon substrate; Then in the end ring groove, fill silica, and remove the silica on surface with returning carving technology, expose epitaxial surface, guarantee the smooth of silicon chip surface; Then finish production process according to the normal process flow of power MOS (Metal Oxide Semiconductor) device manufacturing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010100430 CN102136495B (en) | 2010-01-25 | 2010-01-25 | Structure of semiconductor high-voltage device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010100430 CN102136495B (en) | 2010-01-25 | 2010-01-25 | Structure of semiconductor high-voltage device and manufacturing method thereof |
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| CN102136495A CN102136495A (en) | 2011-07-27 |
| CN102136495B true CN102136495B (en) | 2013-02-13 |
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| CN103165450B (en) * | 2011-12-09 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | The manufacture method of end ring |
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| JP3908572B2 (en) * | 2002-03-18 | 2007-04-25 | 株式会社東芝 | Semiconductor element |
| GB0214618D0 (en) * | 2002-06-25 | 2002-08-07 | Koninkl Philips Electronics Nv | Semiconductor device with edge structure |
| JP3914226B2 (en) * | 2004-09-29 | 2007-05-16 | 株式会社東芝 | High voltage semiconductor device |
| CN100555666C (en) * | 2007-12-22 | 2009-10-28 | 苏州硅能半导体科技股份有限公司 | A kind of deep groove large power MOS device and manufacture method thereof |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |