CN102127749A - MOCVD (metal-organic chemical vapour deposition) reactor - Google Patents
MOCVD (metal-organic chemical vapour deposition) reactor Download PDFInfo
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- CN102127749A CN102127749A CN2010100228791A CN201010022879A CN102127749A CN 102127749 A CN102127749 A CN 102127749A CN 2010100228791 A CN2010100228791 A CN 2010100228791A CN 201010022879 A CN201010022879 A CN 201010022879A CN 102127749 A CN102127749 A CN 102127749A
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Abstract
本发明公开了一种MOCVD反应设备中的反应器，由气体导入口、反应腔和气体排出口三部分组合而成，包含一层流式MOCVD反应腔，其特征在于，该反应器包括两个基底托盘装置，相对平行设置于该反应腔的气流两侧。该MOCVD反应腔其一端设有气体导入口，另一端设有气体排出口，反应气体从该气体导入口进入该MOCVD反应腔流动到另一端从该气体排出口排出。本发明在相同的加工情况下，将气体的利用率提高了一倍，同时也将生产效率提高了一倍。不仅可用于气流横向流动的横式反应腔，也可以用于气流由边缘向中心流动及中心向边缘流动的反应腔类型。
The invention discloses a reactor in MOCVD reaction equipment, which is composed of three parts: a gas inlet, a reaction chamber and a gas discharge outlet, and includes a laminar flow MOCVD reaction chamber. It is characterized in that the reactor includes two The base tray device is arranged relatively parallel on both sides of the airflow of the reaction chamber. One end of the MOCVD reaction chamber is provided with a gas inlet, and the other end is provided with a gas outlet. The reaction gas enters the MOCVD reaction chamber from the gas inlet and flows to the other end and is discharged from the gas outlet. Under the same processing condition, the invention doubles the gas utilization rate and also doubles the production efficiency. Not only can it be used in horizontal reaction chambers where the gas flow flows laterally, but it can also be used in reaction chamber types where the gas flow flows from the edge to the center and from the center to the edge.
Description
Technical field
The present invention relates to semi-conductor chip manufacturing technology field, be specifically related to semi-conductor chip MOCVD conversion unit.
Background technology
MOCVD (Metal Organic Chemical Vapor Deposition) equipment; it is metal-organic chemical vapor deposition equipment; it is the key equipment of compound semiconductor epitaxial investigation of materials and production; be particularly suitable for the large-scale industrial production of compound semiconductor functional structure material; be the irreplaceable core semiconductor equipment of other semiconductor devices; being the main means of producing semiconductor photoelectric device and microwave device material in the world today, is that the current information industry development, national defence new and high technology break through indispensable strategic high-tech semiconductor equipment.At present gallium nitride material has obtained large-scale application at the aspects such as LED of preparation blue laser and semiconductor lighting, wherein the MOCVD system key equipment that is absolutely necessary.In addition, the MOCVD system also is the gan high-power electronic device of wave bands such as research and development world-class S, C, X, K and Q and the indispensable basic means that high-power solid switch device, high-end Laser Devices and efficient can reach the opto-electronic devices such as solar cell more than 40%.MOCVD equipment dependence on import for a long time, cost an arm and a leg, not only expend a large amount of financial resources but also cause the semiconductor light source price to occupy high-order, unfavorable popularization, owing to do not grasp the key equipment technology, greatly restrict the raising of material technology and device performance conversely, restricted further developing of China's photoelectronic industry, also become the bottleneck of the high-end opto-electronic device of development China.What is more, even import also is subjected to many restrictions.This just requires us can oneself grasp MOCVD the equipment particularly design and the manufacturing technology of reaction chamber, thereby close fit designs and Technology personnel tackle key problems jointly, otherwise has little scope for one's talents.So on the one hand the production domesticization of MOCVD equipment itself for China's photoelectronic industry to reduce cost, promote semiconductor lighting application etc. most important, on the other hand, preparing high-end opto-electronic device, not grasp equipment manufacturing technology just difficult to move even one step at all.The mode that the reactant gases of MOCVD enters reaction chamber generally is divided into two kinds of spray header and laminar flow formulas (horizontal type).The design more complicated of spray header, and the sprinkler design of laminar flow formula is simple relatively, under the level of processing condition of present China, is a more actual selection.The design of present international MOCVD laminar flow formula roughly is divided into three kinds of modes: 1. reactant gases enters from an end of reaction chamber, discharges from the relative the other end; When 2. adopting circular reaction chamber, the shower nozzle from circumference sprays into reactant gases, and gas is discharged near the venting hole the center of circle; 3. be circular reaction chamber equally, reactant gases sprays near the shower nozzle the center of circle, gets rid of near the venting port the circumference.These several reaction chambers designs at present all are only in the one side of laminar flow gas the substrate pallet to be set, and the two sides of laminar flow gas is symmetric, has reduced the utilization ratio of gas on the one hand, has increased the difficulty of vent gas treatment; Also wasted the production capacity of device on the other hand.
Chinese invention patent application CN1669117A discloses a kind of MOCVD conversion unit, reaction chamber is made up of the hood-shaped quartz material of ring clock, the reaction chamber upper end is a gas introduction port, have a gas discharge outlet on the sidewall, bottom position is provided with the substrate pallet of liftable, rotation, and cleaning substrate is placed on the pallet.Design has only utilized the one side of laminar flow gas like this, and does not use the another side of laminar flow gas, has reduced the utilization ratio of gas.
Summary of the invention
The objective of the invention is in order to overcome the defective of prior art, a kind of semi-conductor chip MOCVD conversion unit that relates to is provided.Be specifically related to the laminar flow formula MOCVD reaction chamber in the MOCVD reactor, this reaction chamber device can fully utilize laminar flow gas is two-sided, has reduced the difficulty of vent gas treatment simultaneously.
Particularly, MOCVD equipment of the present invention is mainly combined by gas introduction port 1, reaction chamber 2, gas discharge outlet 3, three parts.MOCVD reactor of the present invention comprises two base-tray devices, and opposing parallel is arranged at the air-flow both sides of this reaction chamber.An identical substrate pallet is all respectively arranged being parallel to the streamlined relative two sides of reactant gases, heating component supports and drives the substrate pallet with up-down mechanism and can move up and down with respect to reaction chamber.When reaction, two substrate pallets all closely link to each other with reaction chamber, and substrate abuts against the both sides of laminar flow reactant gases.When reactant gases when the reaction chamber, the upper surface of reaction gas contacts with substrate in the upper substrate pallet and forms the growth material film, the lower surface of reaction gas contacts with substrate in the lower substrate pallet and forms the growth material film, and the two sides of reactant gases just all is utilized like this.When the exchange substrate, two substrate pallets can move to other position respectively, under the protection of vacuum or rare gas element, have the substrate of film to shift out with long; To be placed at the cleaning substrate that pretreatment chamber handled on the substrate pallet.
Beneficial effect of the present invention is:
MOCVD reactor of the present invention is not influencing under the situation that the original substrate pallet of MOCVD equipment, reaction control, air-flow distribute, and the utilization ratio of gas is doubled, and also production efficiency is doubled simultaneously.
For the ease of understanding, below will the present invention be described in detail by concrete drawings and Examples.It needs to be noted, specific examples and accompanying drawing only are in order to illustrate, obviously those of ordinary skill in the art can illustrate according to this paper, within the scope of the invention the present invention is made various corrections and change, and these corrections and change are also included in the scope of the present invention.
Description of drawings
Fig. 1: the structural representation of MOCVD reactor of the present invention.
Fig. 2: the schematic top plan view of the reaction chamber part of MOCVD reactor of the present invention.
Embodiment
Exemplary MOCVD device structure is shown in Fig. 1-2, and MOCVD equipment is mainly combined by gas introduction port 1, reaction chamber 2, gas discharge outlet 3, three parts.Reactor comprises two base-tray devices, and opposing parallel is arranged at the air-flow both sides of this reaction chamber, an identical substrate pallet is all respectively arranged being parallel to the streamlined relative two sides of reactant gases.Heating component supports with up-down mechanism 4 drive substrate pallets and can move up and down with respect to reaction chamber.Lower substrate pallet and heating component 6 drop to specified location, and upper substrate pallet and heating component 6 rise to specified location, and whole cavity 2,5 is vacuumized, and guarantee the influence of no residual gas and dust etc. in the cavity.When specified location, by substrate exchange mechanism 10, with the push-pull valve 8 of pretreated substrate 7 by opening, be placed on the substrate pallet 6 from pretreatment chamber 9, heating component support and up-down mechanism 4 two-part substrate pallet 6 up and down all move to the reaction chamber both sides, heating component supports and closely contacts with reaction chamber by rubber o-ring with the part of up-down mechanism 4, thereby reaction chamber 2 and cavity 5 other parts are isolated.When reaction, two substrate pallets 6 all closely link to each other with reaction chamber 2, and substrate 7 is positioned on the substrate pallet 6, makes substrate 7 abut against the both sides of laminar flow reactant gases.Heated substrates imports reactant gases by intake zone mouth 1, at the required film of growth on substrate 7 of beginning under the environment of suitable temperature and reactant gases.Film growth stops heating, stops to feed reactant gases behind desired thickness.Substrate pallet is up and down moved to the specified location of exchange sample, take out the substrate of the film of having grown, put into pretreated cleaning substrate, repeat above step and finish new substrate 7 and generate.
Claims (4)
1. MOCVD reactor, combine by gas introduction port, reaction chamber and gas discharge outlet three parts, comprise one deck streaming MOCVD reaction chamber, it is characterized in that, this reactor comprises two base-tray devices, and opposing parallel is arranged at the air-flow both sides of this reaction chamber.
2. according to right 1 described MOCVD reactor, wherein this MOCVD reaction chamber is the horizontal type reaction chamber, the one end is provided with gas introduction port, and the other end is provided with gas discharge outlet, and reactant gases enters this MOCVD reaction chamber from this gas introduction port and flow to the other end from this gas discharge outlet discharge.
3. according to right 1 described MOCVD reactor, it is characterized in that: described MOCVD reaction chamber is applicable to that reactant gases flows around the mind-set from pallet.
4. according to right 1 described MOCVD reactor, it is characterized in that: described MOCVD reaction chamber be applicable to reactant gases around the pallet to center flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100228791A CN102127749A (en) | 2010-01-15 | 2010-01-15 | MOCVD (metal-organic chemical vapour deposition) reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010100228791A CN102127749A (en) | 2010-01-15 | 2010-01-15 | MOCVD (metal-organic chemical vapour deposition) reactor |
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| CN102127749A true CN102127749A (en) | 2011-07-20 |
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| CN2010100228791A Pending CN102127749A (en) | 2010-01-15 | 2010-01-15 | MOCVD (metal-organic chemical vapour deposition) reactor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318543A (en) * | 2021-12-28 | 2022-04-12 | 江苏布里其曼科技股份有限公司 | System and method for manufacturing semipolar gallium nitride epitaxial layer structure |
| CN115182048A (en) * | 2022-06-13 | 2022-10-14 | 无锡吴越半导体有限公司 | A new type of GaN crystal growth equipment |
-
2010
- 2010-01-15 CN CN2010100228791A patent/CN102127749A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318543A (en) * | 2021-12-28 | 2022-04-12 | 江苏布里其曼科技股份有限公司 | System and method for manufacturing semipolar gallium nitride epitaxial layer structure |
| CN115182048A (en) * | 2022-06-13 | 2022-10-14 | 无锡吴越半导体有限公司 | A new type of GaN crystal growth equipment |
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Application publication date: 20110720 |