CN201890929U - Carrying disc structure for vapor phase deposition equipment - Google Patents
Carrying disc structure for vapor phase deposition equipment Download PDFInfo
- Publication number
- CN201890929U CN201890929U CN2010206085886U CN201020608588U CN201890929U CN 201890929 U CN201890929 U CN 201890929U CN 2010206085886 U CN2010206085886 U CN 2010206085886U CN 201020608588 U CN201020608588 U CN 201020608588U CN 201890929 U CN201890929 U CN 201890929U
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- carrying
- load plate
- support
- recess
- vapor deposition
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Abstract
The utility model discloses a carrying disc structure for vapor phase deposition equipment. The upper surface of a circular disc body is provided with 13 to 14 circular carrying dent parts for carrying a four-inch circular substrate; the bottom surface of each carrying dent part is a cambered surface which protrudes upwards; the inner diameter of each dent part is provided with a supporting part for supporting a substrate; and the highest position of the cambered surface is lower than the upper surface of the supporting part.
Description
Technical field
The utility model relates to a kind of being used in the vapor deposition apparatus, is used to carry the load plate structure of wafer substrate.
Background technology
Organo-metallic vapour deposition board (Metalorganic Chemical Vapor Phase Deposition, MOCVD) be the key equipment of making photodiode (LED), the instinct that manufactures that the Xing of equipment institute gives birth to is competed with conventional art, the LED that is produced just can be competitive, therefore, the evolution of MOCVD is still and constantly carries out middle problem.The capacity of MOCVD is an important evidence of assessment LED manufacturing cost.In the time of 1988, but first business-like MOCVD board can carry the wafer substrate of a slice 2 inch and represent the processing procedure ability of production specific components.Occurred first multiple-piece planar reaction chamber (Planetary Reactor) that can be used for gallium arsenide GaAs and indium phosphide InP series material in 1992, and released the type that can be used for gan GaN series material, can hold six 2 inch wafers in 1996.This progress makes compound semiconductor already be able to make in a large number the assembly such as radium-shine and LED.
The system component of MOCVD board can roughly be divided into: reaction chamber (Reactor Chamber), gas control, mixing system, reaction source and flare system.
Reaction chamber mainly is the place that all gas mixes and reacts, in cavity, have a load plate and be used for bearing substrate, this load plate must absorb the energy that provides from well heater and needed temperature when reaching film growth efficiently, but also can not react, so be to form mostly with the graphite manufacturing with reactant gases.The setting of well heater, the difference according to design can be arranged in the reaction cavity, or be arranged on outside the cavity, and the kind of well heater then has in modes such as infrared lamp, thermal resistance wire or microwaves and heats.In reaction cavity inside many passages that can allow water coolant circulate are arranged usually, can allow water coolant avoid cavity over-heated condition takes place in this when film growth.
Current-carrying gas flows into system from the supplied upstream end of system, controls the flow that gas in each pipeline flows into reaction chamber via the adjusting of flow director (MFC, Mass flow controller).Before these gases flow into reaction chambers, decide this inflow reaction chamber (Run) of gas in this pipeline through one group of gas switched router (Run/Vent Switch) earlier, or directly drain into the exhaust pipe (Vent) of reaction chamber tail end.The gas that flows into reaction cavity then can participate in reaction and the growth film, and the gas that directly enters the exhaust pipe of reaction chamber tail end then is not participate in the film growth reaction.
Reaction source can be divided into two kinds, and first kind is the organometallic reaction source, and second kind is hydride (Hydride) gas reaction source.The organometallic reaction source is stored in the stainless cylinder of steel of sealing with the outer pipeline of two connection, when this metal reaction source of use, be with the outer pipeline of these two connection each with the pipeline of MOCVD board with the joint tight joint, current-carrying gas can be from wherein end inflow, and the saturated vapo(u)r of reaction source is taken out of when an other end flows out, and then can flow to reaction chamber.
Waste gas system is the least significant end that is positioned at system, is responsible for absorption and handles all toxic gases by system, to reduce the pollution to environment.
Along with industry gradually grows up, bring into use 4 inch substrates and the microwave industry is used 6 inch substrates in response to the LED processing procedure, the MOCVD new installation has proceeded to the substrates that can carry different sizes simultaneously.Present LED industry has begun to be applied to automobile and display industry, and the led chip price also continues to fall, and the importance of manufacturing cost is more and more highlighted, and in view of this, MOCVD equipment must be complied with this demand and adjust.
The production capacity maximization is the important means that reduces manufacturing cost; yet; in GaN LED brilliant processing procedure of heap of stone; usually use high bake during the building crystal to grow each time and remove settling on the graphite microscope carrier; use the process conditions that keeps stable; but quite consuming time, add the restriction of the technical qualification of MOCVD board own, thereby influenced the wafer number that the MOCVD board can output.Producing the MOCVD board of 4 inch substrates, present existing technology is only can be on a load plate the highest carries 12 substrates simultaneously, surpasses the effect that this quantity of 12 promptly can influence aforementioned building crystal to grow.
The utility model content
The purpose of this utility model, when being to solve existing MOCVD board and carrying out the organo-metallic vapour deposition of 4 inch wafer substrates, its load plate at most only can carry 12 4 inch substrates, so that can't further promote output, the problem that reduces cost.
Feature of the present utility model, be under the volume and area principle of invariance of existing load plate, utilize the change and the arrangement of carrying recess location, make 13 or 14 carrying recesses are set on a load plate simultaneously, thereby can in a deposition manufacture process, handle more polycrystalline physa plate simultaneously.
Technique means of the present utility model, be that upper surface in a circular disk body is provided with 13～14 circle carrying recesses that are used for carrying 4 inch circular substrates, the bottom surface of each described carrying recess forms toward the cambered surface of top projection, and the internal diameter of this recess is provided with the support that is used to support a substrate, the extreme higher position of described cambered surface is lower than the upper surface of this support, but below the periphery of support supporting substrate, but the highest point of cambered surface is central authorities below the supporting substrate then, avoid substrate to be subjected to the terrestrial attraction effect and deflection.
The support in the carrying recess is located in a kind of preferable selection, the utility model, can be a kind of along the outstanding continuously inward flange of the internal diameter wall of this carrying recess.
The support in the carrying recess is located in another kind of preferable selection, the utility model, can be a kind of along the outstanding at interval salient of the internal diameter of this carrying recess.
A kind of preferable selection, the utility model can be below load plate central authorities be provided with the centre hole of the drive shaft that is used for being matched with drive unit, be driven in rotation when load plate is deposited in the MOCVD board.
Compare with the load plate that MOCVD board of the prior art is used, though load plate of the present utility model only has more 1～2 carrying recess than it, in the industrial community in low margin age, even if a spot of cost reduces, also the positive conduct for making a profit and promoting has meaning out of the ordinary for the research staff.
Description of drawings
Fig. 1 is for showing the plan view from above of load plate structure of the present utility model.
Fig. 2 is the section plan along the 2-2 direction of Fig. 1.
Fig. 3 is the section plan along the 3-3 direction of Fig. 1, and be located at the carrying recess support be the embodiment of inward flange.
Fig. 3 A is the top plan view enlarged view of the carrying recess of Fig. 3.
Fig. 4 is for showing that the support of being located at the carrying recess of the present utility model is the embodiment of the salient at a plurality of intervals.
Fig. 4 A is the top plan view enlarged view of the carrying recess of Fig. 3.
Embodiment
Those skilled in the art below cooperate Figure of description that embodiment of the present utility model is done more detailed description, so that can implement after studying this specification sheets carefully according to this.
Consult shown in Fig. 1 to Fig. 3 A, the load plate 1 that the utility model provides is made conglobate disk body for adopting graphite material, its first embodiment is the carrying recess 11 that molds 13 or 14 circles at the upper surface of load plate 1, and this carrying recess 11 just can be for inserting the circular substrate 2 that diameter is 4 inch (joining shown in Figure 3); Bottom surface of each carrying recess 11 forms the cambered surface 13 toward the top projection, and the internal diameter of this carrying recess 11 is provided with the support 12 that is used for supporting substrate 2, and the extreme higher position of described cambered surface 13 is lower than the upper surface of this support 12.Shown in Fig. 3 and Fig. 3 A, the described support of being located in the carrying recess 11 12 can be along the outstanding continuously inward flange 12A of the internal diameter wall of this carrying recess; Also can be shown in Fig. 4 and Fig. 4 A, support 12 is along the outstanding at interval salient 12B of the internal diameter of carrying recess 11.The following central authorities of load plate 1 then are provided with the centre hole 14 of the drive shaft of the drive unit that is used for being matched with the MOCVD board, are driven in rotation when load plate is deposited in the MOCVD board.
The above only is in order to explain preferred embodiment of the present utility model; be not that attempt is done any pro forma restriction to the utility model according to this; therefore; all have in that identical creation spirit is following do relevant any modification of the present utility model or change, all must be included in the category of the utility model intention protection.
Claims (4)
1. load plate structure that vapor deposition apparatus is used, it is characterized in that, upper surface in a circular disk body is provided with 13～14 circle carrying recesses that are used for inserting 4 inch circular substrates, the bottom surface of each described carrying recess forms toward the cambered surface of top projection, and the internal diameter of this recess is provided with the support that is used to support a substrate, and the extreme higher position of described cambered surface is lower than the upper surface of this support.
2. the load plate structure that vapor deposition apparatus as claimed in claim 1 is used is characterized in that, described support is along the outstanding continuously inward flange of the internal diameter wall of this carrying recess.
3. the load plate structure that vapor deposition apparatus as claimed in claim 1 is used is characterized in that, described support is along the outstanding at interval salient of the internal diameter of this carrying recess.
4. the load plate structure that vapor deposition apparatus as claimed in claim 1 is used is characterized in that, the following central authorities of described load plate are provided with the centre hole of the drive shaft that is used for being matched with drive unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206085886U CN201890929U (en) | 2010-11-16 | 2010-11-16 | Carrying disc structure for vapor phase deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206085886U CN201890929U (en) | 2010-11-16 | 2010-11-16 | Carrying disc structure for vapor phase deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201890929U true CN201890929U (en) | 2011-07-06 |
Family
ID=44220406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206085886U Expired - Lifetime CN201890929U (en) | 2010-11-16 | 2010-11-16 | Carrying disc structure for vapor phase deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201890929U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605341A (en) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | Vapor deposition apparatus and susceptor |
| WO2019114806A1 (en) * | 2017-12-15 | 2019-06-20 | 京东方科技集团股份有限公司 | Deposition carrier board and deposition equipment |
| CN110331381A (en) * | 2019-06-11 | 2019-10-15 | 康佳集团股份有限公司 | A kind of epitaxial wafer growth furnace, equipment, MOCVD method and epitaxial wafer |
-
2010
- 2010-11-16 CN CN2010206085886U patent/CN201890929U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102605341A (en) * | 2011-01-20 | 2012-07-25 | 奇力光电科技股份有限公司 | Vapor deposition apparatus and susceptor |
| WO2019114806A1 (en) * | 2017-12-15 | 2019-06-20 | 京东方科技集团股份有限公司 | Deposition carrier board and deposition equipment |
| CN110331381A (en) * | 2019-06-11 | 2019-10-15 | 康佳集团股份有限公司 | A kind of epitaxial wafer growth furnace, equipment, MOCVD method and epitaxial wafer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161117 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Taiwan Taoyuan County Patentee before: Formosa Epitaxy Incorporation |
|
| CX01 | Expiry of patent term |
Granted publication date: 20110706 |
|
| CX01 | Expiry of patent term |