CN102117742B - Method for reinforcing capability of blocking tilt angle ion injection - Google Patents
Method for reinforcing capability of blocking tilt angle ion injection Download PDFInfo
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- CN102117742B CN102117742B CN 201010027219 CN201010027219A CN102117742B CN 102117742 B CN102117742 B CN 102117742B CN 201010027219 CN201010027219 CN 201010027219 CN 201010027219 A CN201010027219 A CN 201010027219A CN 102117742 B CN102117742 B CN 102117742B
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Abstract
The invention discloses a method for reinforcing the capability of blocking tilt angle ion injection, which is to form a ladder shaped section through a multi-step photoetching process, wherein the number of photoetching steps is more than or equal to 2. The method comprises the following steps: (1) first photoetching: photoresist coating is adopted, a blocking pattern is formed through exposure,and the thickness of the developed photo resistance is T0; (2) a surface curing layer formed by ultraviolet radiation or high-temperature baking; and (3) second photoetching: the photoresist coating is adopted, a bigger blocking pattern is formed through exposure so as to form a ladder shaped section, wherein the thickness of the developed photo resistance is T0+T1. In the method, a photoetching step can be added, and the thickness of a finally formed photo resistance is T0+T1+...+Tx, wherein x is more than or equal to 2. By the method, the ladder shaped section is formed by the multi-step photoetching process, the injection angle and effect cannot be changed while the blocking resistance of a non-injection area is reinforced.
Description
Technical field
The invention belongs to semiconductor integrated circuit and make the field, relate to a kind of high angle injection technology method, relate in particular to a kind of method that angled ion is injected blocking capability that strengthens.
Background technology
In some high angle injection technologies, for example pocket (bag) injects, and must use large rake angle (＞20 °) injection technology, satisfies the device property demand to reach specific injection effect (profile).Under the condition for certain certain device requirement, the angle θ of injection must be limited in certain scope (θ
0).In the situation that design rule has been determined, owing to there is shadow effect (shadow effect), just there is a upper limit T in photoresistance thickness
0, as shown in Figure 1.
When because characteristic demand when strengthening Implantation Energy and keeping original injection effect, for effective protection non-injection regions territory, must increase photoresistance thickness, will be from originally fully different but inject accordingly effect.Now possible solution is to redefine design rule, but this means that huge cost considers.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of method that angled ion is injected blocking capability that strengthens, and the method forms stepped section by the multistep photoetching process, can't change implant angle and effect when strengthening the anti-blocking capability in non-injection regions territory.
For solving the problems of the technologies described above, the invention provides a kind of method that angled ion is injected blocking capability that strengthens, form stepped section by the multistep photoetching process, wherein, lithography step is more than or equal to 2; The method comprises the steps:
(1) first step photoetching comprises light blockage coating, and exposure forms and stops figure, and post-develop resistance thickness is T
0
(2) ultraviolet ray irradiation or high-temperature baking form the surface cure layer at photoresistance;
(3) second step photoetching comprises light blockage coating, and exposure forms the larger sized figure that stops, the photoresistance figure that the photoresistance figure that is formed by step (1) and step (3) form forms stepped section, and it is T that post-develop hinders thickness
0+ T
1
Can also increase lithography step afterwards, the final photoresistance thickness that forms is T
0+ T
1+ ... + T
x, x＞=2 wherein.
In the step (1), described photoresistance is I-line photoresistance or KrF photoresistance.
In the step (3), same light shield is adopted in described second step photoetching and first step photoetching, forms the larger sized figure that stops by macro-energy more.
In the step (3), described second step photoetching adopts identical graphic designs from first step photoetching but the light shield size is different, forms the larger sized figure that stops by exposure.
In the step (3), the photoresistance that the second step photoetching is adopted is I-line photoresistance or KrF photoresistance.
In the step (3), described second step photoetching can not change ion implantation angle θ
0
In the step (3), described second step photoetching can not change ion implantation angle θ
0
Described multistep photoetching needs ultraviolet ray irradiation or high-temperature baking after each photoetching except last photoetching.
Be compared with existing technology, the present invention has following beneficial effect: by the multistep photoetching process, not changing existing design rule and keeping having strengthened the anti-blocking capability in non-injection regions territory under the prerequisite of original implant angle and effect, saved simultaneously a large amount of development costs.
Description of drawings
Fig. 1 is that existing oblique angle injects the photoetching generalized section;
Fig. 2 is process flow diagram of the present invention; Wherein, Fig. 2 (a) is the schematic diagram of first step photoetching; Fig. 2 (b) is the schematic diagram that ultraviolet ray irradiation (UVC) or high-temperature baking (Hard bake) are processed; Fig. 2 (c) is the schematic diagram that the second step photolithographic exposure forms stepped section.
Wherein, poly is polysilicon, and PR is photoresistance, and Thin crust is the surface cure layer.
Embodiment
The present invention is further detailed explanation below in conjunction with drawings and Examples.
As shown in Figure 2, the present invention forms stepped section by the multistep photoetching process, goes on foot with two and is lithographically example, and the specific implementation processing step is as follows:
1) for the first time photoresistance (PR) coating, photoresistance can be I-line or KrF photoresistance;
2) for the first time exposure forms and stops figure, and post-develop resistance thickness is T
0, first step photoetching and figure that existing photoetching process forms are in full accord, see Fig. 2 (a);
3) ultraviolet ray irradiation (UVC) or high-temperature baking (Hard bake) form surface cure layer (Thin crust), see Fig. 2 (b);
4) light blockage coating for the second time, photoresistance can be I-line or KrF photoresistance;
5) for the second time exposure forms the figure that stops of larger CD (size) with the same light shield of for the first time photoetching with macro-energy exposure more, forms stepped section, and the photoresistance gross thickness is T at last
0+ T
1, see Fig. 2 (c).The second step photoetching can make identical graphic designs from first step photoetching but light shield size (mask CD) can be different, forms the figure that stops of larger CD by exposure.The second step photoetching can not change implant angle θ
0
Certainly, the lithography step of the inventive method can be more than or equal to 2, and the final photoresistance thickness that forms is T
0+ T
1+ ... + T
x(x＞=2).Except last photoetching, all need ultraviolet ray irradiation (UVC) or high-temperature baking (Hard bake) after each photoetching.
The present invention forms stepped section by the multistep photoetching process, do not changing existing design rule and keeping having strengthened the anti-blocking capability in non-injection regions territory under the prerequisite of original implant angle and effect, simultaneously can not change implant angle and effect, save a large amount of development costs.
Claims (8)
1. one kind strengthens the method that angled ion is injected blocking capability, it is characterized in that form stepped section by the multistep photoetching process, wherein, lithography step is more than or equal to 2; The method comprises the steps:
(1) first step photoetching comprises light blockage coating, and exposure forms and stops figure, and post-develop resistance thickness is T
0
(2) ultraviolet ray irradiation or high-temperature baking form the surface cure layer at photoresistance;
(3) second step photoetching comprises light blockage coating, and exposure forms the larger sized figure that stops, the photoresistance figure that the photoresistance figure that is formed by step (1) and step (3) form forms stepped section, and it is T that post-develop hinders thickness
0+ T
1
Can also increase lithography step afterwards, the final photoresistance thickness that forms is T
0+ T
1+ ... + T
x, x＞=2 wherein.
2. enhancing angled ion as claimed in claim 1 is injected the method for blocking capability, it is characterized in that in the step (1), described photoresistance is I-line photoresistance or KrF photoresistance.
3. enhancing angled ion as claimed in claim 1 is injected the method for blocking capability, it is characterized in that in the step (3), same light shield is adopted in described second step photoetching and first step photoetching, forms the larger sized figure that stops by macro-energy more.
4. enhancing angled ion as claimed in claim 1 is injected the method for blocking capability, it is characterized in that, in the step (3), described second step photoetching adopts identical graphic designs from first step photoetching but the light shield size is different, forms the larger sized figure that stops by exposure.
5. such as the method for claim 1 or 3 or 4 described enhancing angled ion injection blocking capabilities, it is characterized in that in the step (3), the photoresistance that the second step photoetching is adopted is I-line photoresistance or KrF photoresistance.
6. such as the method for claim 1 or 3 or 4 described enhancing angled ion injection blocking capabilities, it is characterized in that in the step (3), described second step photoetching can not change ion implantation angle θ
0
7. enhancing angled ion as claimed in claim 5 is injected the method for blocking capability, it is characterized in that in the step (3), described second step photoetching can not change ion implantation angle θ
0
8. enhancing angled ion as claimed in claim 1 is injected the method for blocking capability, it is characterized in that described multistep photoetching needs ultraviolet ray irradiation or high-temperature baking after each photoetching except last photoetching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010027219 CN102117742B (en) | 2010-01-05 | 2010-01-05 | Method for reinforcing capability of blocking tilt angle ion injection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010027219 CN102117742B (en) | 2010-01-05 | 2010-01-05 | Method for reinforcing capability of blocking tilt angle ion injection |
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|---|---|
| CN102117742A CN102117742A (en) | 2011-07-06 |
| CN102117742B true CN102117742B (en) | 2013-03-13 |
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|---|---|---|---|
| CN 201010027219 Active CN102117742B (en) | 2010-01-05 | 2010-01-05 | Method for reinforcing capability of blocking tilt angle ion injection |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679657B (en) * | 2016-01-26 | 2018-06-08 | 京东方科技集团股份有限公司 | A kind of preparation method of patterning method and array substrate |
| CN111755326A (en) * | 2020-06-29 | 2020-10-09 | 西安微电子技术研究所 | Method for solving peeling defect of silicon substrate in 7-degree angle injection process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497679A (en) * | 2002-10-08 | 2004-05-19 | ���µ�����ҵ��ʽ���� | Manufacturing method of semiconductor device |
| CN101211766A (en) * | 2006-12-28 | 2008-07-02 | 海力士半导体有限公司 | Method of ion implantation and method of fabricating a semiconductor device |
| CN101593682A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The manufacture method of ion injection method and semiconductor device |
-
2010
- 2010-01-05 CN CN 201010027219 patent/CN102117742B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497679A (en) * | 2002-10-08 | 2004-05-19 | ���µ�����ҵ��ʽ���� | Manufacturing method of semiconductor device |
| CN101211766A (en) * | 2006-12-28 | 2008-07-02 | 海力士半导体有限公司 | Method of ion implantation and method of fabricating a semiconductor device |
| CN101593682A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The manufacture method of ion injection method and semiconductor device |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-216108A 2000.08.04 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |