CN102115870A - Sputtering coating device - Google Patents
Sputtering coating device Download PDFInfo
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- CN102115870A CN102115870A CN2009103127179A CN200910312717A CN102115870A CN 102115870 A CN102115870 A CN 102115870A CN 2009103127179 A CN2009103127179 A CN 2009103127179A CN 200910312717 A CN200910312717 A CN 200910312717A CN 102115870 A CN102115870 A CN 102115870A
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- inlet pipe
- target
- sputtering
- web plate
- conducting element
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Abstract
The invention relates to a sputtering coating device comprising a sputtering coating chamber, an air inlet pipe arranged on the sputtering coating chamber and used for inputting air into the sputtering coating chamber, and a guide member, wherein the guide member is contained in the sputtering coating chamber, connected on the air inlet pipe and provided with an opening communicated with the air inlet pipe as well as a flow channel communicated with the opening; and during sputtering coating, the flow channel right faces a target so that air in the air inlet pipe can be guided to the target, and a protective layer is formed at the surface of the target so that reactant gas can be prevented from poisoning the target during chemical reaction and the service life of the target can be effectively prolonged, thereby improving the film coating quality.
Description
Technical field
The present invention relates to the plated film processing technique field, particularly a kind of sputtering apparatus.
Background technology
Sputter is to utilize the ionic bombardment target, and the atom in the target is knocking-on and be deposited on substrate surface and pile up film forming.When the sputter compound film, if directly with compound as target, the film composition that sputter goes out can differ greatly with the target composition, so generally when the sputter compound film, usually reactant gases is mixed in the discharge gas, with the composition and the character of control compound film, this kind jet-plating method is called reactive sputter.Yet in the existing reactive sputter, gas is to mix near target material surface, and a large amount of chemical reactions takes place near target material surface reactant gases, so the surface of target is easy to generate and poisons problem, has a strong impact on target life.In addition, the poisoning of target can cause sputtering rate slack-off, form problem such as cambered surface, influence the plated film quality.
Summary of the invention
In view of this, be necessary to provide a kind of sputtering apparatus that can effectively avoid target to poison.
A kind of sputtering apparatus, comprise that a sputtering chamber, is arranged at an inlet pipe and a conducting element that is used for input gas in sputtering chamber in this sputtering chamber, this conducting element is contained in the sputtering chamber and is connected on this inlet pipe, this conducting element is provided with an opening that is communicated with inlet pipe and one and the runner of open communication, thereby this runner is directed to target over against target with the gas of inlet pipe during sputter.
Compared with prior art; sputtering apparatus of the present invention is directed to the surface of target by conducting element with rare gas element, thereby forms protective layer on the surface of target, avoids reactant gases to poison target when chemical reaction takes place; effectively promote the life-span of target, and then promote the plated film quality.
Description of drawings
The invention will be further described in conjunction with the embodiments with reference to the accompanying drawings.
Fig. 1 is the structural representation of sputtering apparatus one preferred embodiment of the present invention.
Fig. 2 is the perspective view of the conducting element of sputtering apparatus.
The main element nomenclature
Embodiment
As shown in Figure 1, the sputtering apparatus of a preferred embodiment of the present invention comprises sputtering chamber 10, is arranged at target 20, workpiece to be plated 30 and conducting element 60 in this sputtering chamber 10.Wherein this workpiece 30 to be plated places in the sputtering chamber 10 by strut member 50, and target 20 places in the sputtering chamber 10 by web member 40, and is oppositely arranged with workpiece 30 to be plated, as the sputtering source that workpiece 30 to be plated is carried out sputter.
The side that this sputtering chamber 10 is provided with target 20 is provided with inlet pipe 12 and pneumatic tube 14, and this inlet pipe 12 parallels with pneumatic tube 14, is arranged at the opposite end of target 20 respectively, and all perpendicular with target 20.Wherein this inlet pipe 12 is used for the required rare gas element of input sputter in sputtering chamber 10, as argon gas.This pneumatic tube 14 is used in sputtering chamber 10 the required reactant gases of input sputter, and this reactant gases carries out chemical reaction with target 20 atoms that bump comes out, and is deposited on the workpiece 30 to be plated and forms rete thereby generate compound.
As shown in Figure 2, this conducting element 60 is arranged between workpiece 30 to be plated and the target 20, is used for rare gas element is directed to the surface of target 20, thereby forms protective layer on the surface of target 20, avoids target 20 to be poisoned.This conducting element 60 is an insulating material, can avoid short circuit between target 20 and the workpiece to be plated 30.
This conducting element 60 comprises a plate 62, a substrate 64, two side 68 and an end plate 66.Wherein this web plate 62 all is lamellar structure with substrate 64, and be the parallel interval setting, the length of web plate 62 is less than the length of substrate 64, the left justify of the left end of web plate 62 and substrate 64, and the right-hand member of web plate 62 roughly is in the central position of substrate 64.Position near its left end on the web plate 62 forms an opening 620, and this opening 620 runs through this web plate 62 on thickness direction.
Described two side 68 is connected between web plate 62 and the substrate 64, and the space be arranged in parallel, two side 68 all is the lengthwise structure, but the length of sidewall 68 is less than the length of substrate 64 greater than the length of web plate 62, the left end of two side 68 all with the left justify of web plate 62 and substrate 64, the right-hand member of two side 68 then is between the right-hand member of the right-hand member of web plate 62 and substrate 64.One runner 69 is formed between web plate 62, substrate 64 and the two side 68, and is connected with opening 620 on the web plate 62.This end plate 66 is connected in the left end of web plate 62, substrate 64 and sidewall 68, with the left end sealing of runner 69.
During assembling, this conducting element 60 is incorporated on the inlet pipe 12 of sputtering chamber 10, the web plate 62 of conducting element 60 links to each other with inlet pipe 12, opening 620 on the web plate 62 is communicated with inlet pipe 12,69 of the runners of conducting element 60 are perpendicular with inlet pipe 12, and the side that runner 69 is not sealed by end plate 66 is over against target 20.When carrying out sputter; rare gas element and reactant gases are inputed in the sputtering chamber 10 by inlet pipe 12 and pneumatic tube 14 respectively; because the setting of conducting element 60; rare gas element enters conducting element 60 by the opening 620 of conducting element 60 and longshore current road 69 flows to target 20; thereby the surface at target 20 forms protective layer; when reactant gases generation chemical reaction; because the existence of this protective layer; the surface of target 20 is effectively protected and avoids being poisoned; thereby can effectively prolong the work-ing life of target 20, and then promote coating quality.
In addition; in the sputtering apparatus of the present invention; reactant gases is inputed in the sputtering chamber 10 by different pipelines respectively with rare gas element; the input of reactant gases and rare gas element can be controlled respectively; therefore when this sputtering apparatus is used to carry out general sputter; only pneumatic tube 14 need be closed and get final product; do not need to carry out the eliminating of residual gas; shortened the switching time between reactive sputter and the general sputter; and owing to the surface of target 20 is effectively protected; when carrying out the conversion of reactive sputter and general sputter, also can shorten the clear target time.
Claims (9)
1. sputtering apparatus, comprise that a sputtering chamber and is arranged at the inlet pipe that is used for input gas in sputtering chamber in this sputtering chamber, it is characterized in that: also comprise a conducting element, this conducting element is contained in the sputtering chamber and is connected on this inlet pipe, this conducting element is provided with an opening that is communicated with inlet pipe and one and the runner of open communication, thereby this runner is directed to target over against target with the gas of inlet pipe during sputter.
2. sputtering apparatus as claimed in claim 1 is characterized in that: this runner is vertical with inlet pipe.
3. sputtering apparatus as claimed in claim 1 or 2 is characterized in that: also be provided with a pneumatic tube in this sputtering chamber, this inlet pipe is used for importing rare gas element in sputtering chamber, and pneumatic tube is used for importing reactant gases in sputtering chamber.
4. sputtering apparatus as claimed in claim 3 is characterized in that: this inlet pipe and pneumatic tube are arranged at the same side of sputtering chamber, and a connection piece is connected in and is used to support target in this sputtering chamber, and this web member is between inlet pipe and pneumatic tube.
5. sputtering apparatus as claimed in claim 4 is characterized in that: comprise that also one is connected in the strut member in the sputtering chamber, this strut member and web member are oppositely arranged, and are used to install workpiece to be plated.
6. sputtering apparatus as claimed in claim 1, it is characterized in that: this conducting element comprises that one is connected in the web plate and one and the substrate that is provided with of web plate spaced and parallel on the inlet pipe, described opening is formed on the web plate, described runner is formed between web plate and the substrate, and the length of this substrate is greater than the length of web plate.
7. sputtering apparatus as claimed in claim 6 is characterized in that: this conducting element also comprises the two side that is connected between web plate and the substrate, and this two side spaced and parallel is provided with, the length of sidewall less than the length of substrate greater than the length of web plate.
8. sputtering apparatus as claimed in claim 7 is characterized in that: this conducting element comprises that also one is connected in the end plate of an end of web plate, substrate and sidewall, the end that this end plate closes runner is relative with target.
9. sputtering apparatus as claimed in claim 1 is characterized in that: this conducting element is made by insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103127179A CN102115870A (en) | 2009-12-30 | 2009-12-30 | Sputtering coating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103127179A CN102115870A (en) | 2009-12-30 | 2009-12-30 | Sputtering coating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102115870A true CN102115870A (en) | 2011-07-06 |
Family
ID=44214792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009103127179A Pending CN102115870A (en) | 2009-12-30 | 2009-12-30 | Sputtering coating device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102115870A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6256570A (en) * | 1985-09-06 | 1987-03-12 | Tdk Corp | Reactive sputtering method |
| JPS6353721A (en) * | 1986-08-22 | 1988-03-08 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of thin oxide film |
| JPH0967669A (en) * | 1995-08-30 | 1997-03-11 | Sony Corp | Sputtering device |
| TW524869B (en) * | 1999-04-15 | 2003-03-21 | Ulvac Corp | Sputtering device |
| CN100545297C (en) * | 2004-08-26 | 2009-09-30 | 日立环球储存科技荷兰有限公司 | The method for reactive sputter deposition of ultra-thin metal oxide film |
-
2009
- 2009-12-30 CN CN2009103127179A patent/CN102115870A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6256570A (en) * | 1985-09-06 | 1987-03-12 | Tdk Corp | Reactive sputtering method |
| JPS6353721A (en) * | 1986-08-22 | 1988-03-08 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of thin oxide film |
| JPH0967669A (en) * | 1995-08-30 | 1997-03-11 | Sony Corp | Sputtering device |
| TW524869B (en) * | 1999-04-15 | 2003-03-21 | Ulvac Corp | Sputtering device |
| CN100545297C (en) * | 2004-08-26 | 2009-09-30 | 日立环球储存科技荷兰有限公司 | The method for reactive sputter deposition of ultra-thin metal oxide film |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110706 |