CN102097345B - Method for directly depositing metal line patterns on surface of insulating base material - Google Patents
Method for directly depositing metal line patterns on surface of insulating base material Download PDFInfo
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- CN102097345B CN102097345B CN 201010526700 CN201010526700A CN102097345B CN 102097345 B CN102097345 B CN 102097345B CN 201010526700 CN201010526700 CN 201010526700 CN 201010526700 A CN201010526700 A CN 201010526700A CN 102097345 B CN102097345 B CN 102097345B
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Abstract
The invention discloses a method for directly depositing metal line patterns on the surface of an insulating base material. The method comprises the following steps of: selectively self-assembling amino groups on the surface of a matrix at fixed points in a screen printing mode of inert ink patterns, adsorbing a metal catalyst by using the amino groups, and obtaining the required metal patterns by chemical plating deposition. The method has the advantages that: by directly depositing metal lines on the insulating base material by the screen printing method, the obtained line patterns are delicate and attractive; the amino groups for adsorbing metal ions are introduced to the surface of the insulating base material by the self-assembling method; and the method has simple process, is quick to form finished products and easy to realize streamline operation, and can greatly reduce the production cost.
Description
Technical field
The invention belongs to the modern electronic technology field, particularly a kind of method at the direct plated metal line pattern in insulating substrate surface.
Background technology
Preparation metallic circuit pattern is a very important production stage of electronics, optics, mechanical devices such as display, biology sensor etc. on insulating substrate.The ripe now method for preparing the pattern metal circuit; Normally on the metal film that vacuum evaporation, sputter, plating or electroless deposition coating form, obtain corresponding pattern, and then etching forms through technology such as photoetching, electron beam exposure, FIB exposures.Though these technology can make more superior metallic circuit pattern, develop a kind of metal wire production Technology more easy, low-cost, green low-carbon is the pursuit of industry always.
In order to reach this purpose, the researcher has carried out various trials.Wherein, the direct optionally technology of preparing of growing metal line pattern attracts people's attention the most on insulating substrate.Because this circuit manufacturing approach has been given up the step of not only loaded down with trivial details but also high energy consumption such as photoetching plate-making, etching metal film, high pollution, make the manufacturing cost of metallic circuit pattern greatly descend, can be rated as follow-on metallic circuit production technology.For example, fixed point is introduced the metal ion presoma on dielectric base surface selectivity ground, again its reduction is formed required metal film pattern.The key that this method is successful is that substrate surface can pass through the molecule modification, produces groups such as carbonyl, thus with metal ion with ionic bond mode bonding, form slaine type presoma.Therefore, have only some insulating substrate can utilize this kind mode to prepare the metallic circuit pattern such as polyimide film.Also have a kind of method to be; Utilize the mode of irradiation, chemical modification, absorption;, sulfydryl isoreactivity group amino in insulating substrate surface self assembly utilize its absorption palladium, platinum, golden plasma as catalyst, make the metal film pattern that is reduced into of metal ion fixed point through chemical plating.This method is owing to be through self assembly mode modification insulating substrate surface; And the method for self assembly is varied; Can be to the scheme of the different self assembly active group of different insulating substrate designs, the research that therefore utilizes this method on insulating substrate, directly optionally to prepare the metallic circuit pattern is reported also many.
Summary of the invention
The object of the present invention is to provide a kind of easy, that be easy to large-scale production, direct method of ability at the direct plated metal line pattern in insulating substrates such as glass, silicon chip, glass cloth surface.
The technical scheme that the present invention solves the problems of the technologies described above is:
A kind of method at the direct plated metal line pattern in insulating substrate surface; It is mode through silk screen printing inertia ink logo; Fixed point is amine groups in the matrix surface self assembly optionally; Utilize amine groups ADSORPTION OF GOLD metal catalyst, obtain needed metallic pattern through electroless deposition again.
Concrete steps are following:
Matrix surface with the silk screen printing of inertia printing ink on the negative figure of required metallic circuit, under 60 ℃ of conditions, dry; Said matrix is insulating material such as glass, silicon chip or glass cloth.
2) at matrix surface self assembly amino group:
With crosslinking agent polyamine compounds is coated on matrix surface, dry under 50～80 ℃ of conditions, make its surface have amine groups, obtain the matrix of surface modification; Said polyamine compounds be diethylentriamine, triethylenetetramine or molecular weight be 20000～60000 gather Ethylenimine, polyvinylamine, it is 10%～30% solution that water, methyl alcohol or dimethyl formamide are mixed with mass concentration with polyamine compounds; Said crosslinking agent is epoxy resin, oxirane or expoxy propane, dosage of crosslinking agent be polyamine compounds quality 1%～20%;
3) the manual removal ink that removes;
4) matrix surface to modification carries out adsorption of metal ions: it is that the metal salt solution of 0.1～2mol/L soaked 20 minutes that the matrix of modification is placed 50 ℃, concentration, and slaine is the salt of silver, copper, palladium or nickel;
5) chemical plating: immersing the matrix behind the above-mentioned adsorbing metal ions by mass concentration at normal temperatures is in nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% the formaldehyde of 1.5% copper sulphate or 1.5% and the mixed solution that 37% distilled water is formed; Soaked 30 minutes, and can obtain the metallic circuit pattern after the taking-up.
The invention has the beneficial effects as follows:
At the direct plated metal circuit of insulating substrate, the line pattern that obtains is exquisite, attractive in appearance through method for printing screen.Method through self assembly is introduced amine groups in order to adsorbing metal ions on the insulating substrate surface, and this method technology is simple, and finished productization is rapid, is easy to realize the streamlined operation, can reduce production costs greatly.
Embodiment
The foregoing description is a preferred implementation of the present invention; But execution mode of the present invention is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within protection scope of the present invention.
Embodiment 1
Direct deposited copper metallic circuit on the silicon chip
(1) the matrix silicon chip surface with the printing of alkaline-resisting ink screen on the negative figure of required metallic circuit, 60 ℃, oven dry in 30 minutes.
(2) will gather Ethylenimine (molecular weight 25000) uses methyl alcohol to be mixed with mass concentration to be 20% solution, to add crosslinking agent epoxy resin that dosage of crosslinking agent is to gather 10% of Ethylenimine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 50 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the CuSO of 0.5mol/L to above-mentioned silicon chip
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 2
Direct deposited copper metallic circuit on the glass cloth
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of matrix glass cloth, 60 ℃, oven dry in 30 minutes.
(2) use dimethyl formamide to be mixed with mass concentration polyvinylamine (molecular weight 50000) and be 30% solution, add crosslinking agent oxirane that dosage of crosslinking agent is 5% of a polyvinylamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 60 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the Ag of 1.0mol/L to above-mentioned film
2SO
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 3
Direct nickel deposited metallic circuit on glass
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of substrate glass, 60 ℃, oven dry in 30 minutes.
(2) the diethylentriamine water being mixed with mass concentration is 10% solution, adds the crosslinking agent expoxy propane, and dosage of crosslinking agent is 15% of a diethylentriamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 80 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the CuSO of 0.8mol/L to above-mentioned glass
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Embodiment 4
Direct deposited copper metallic circuit on glass
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of substrate glass, 60 ℃, oven dry in 30 minutes.
(2) will gather Ethylenimine (molecular weight 60000) uses dimethyl formamide to be mixed with concentration to be 25% solution, to add crosslinking agent oxirane that dosage of crosslinking agent is to gather 1% of Ethylenimine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 70 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the CuSO of 0.5mol/L to above-mentioned glass
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 5
Direct nickel deposited metallic circuit on the glass cloth
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of matrix glass cloth, 60 ℃, oven dry in 30 minutes.
(2) use methyl alcohol to be mixed with mass concentration triethylenetetramine and be 30% solution, add crosslinking agent epoxy resin that dosage of crosslinking agent is 20% of a triethylenetetramine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 80 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the PdCl of 1.0mol/L to above-mentioned film
2Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Embodiment 6
Direct nickel deposited metallic circuit on the silicon chip
(1) the matrix silicon chip surface with the printing of alkaline-resisting ink screen on the negative figure of required metallic circuit, 60 ℃, oven dry in 30 minutes.
(2) use methyl alcohol to be mixed with mass concentration polyvinylamine (molecular weight 20000) and be 30% solution, add crosslinking agent oxirane that dosage of crosslinking agent is 10% of a polyvinylamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 60 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) place 50 ℃, the Ag of 2mol/L to above-mentioned silicon chip
2SO
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Claims (1)
- One kind on insulating body surface the direct method of plated metal line pattern; It is characterized in that; Mode through silk screen printing inertia ink logo; Fixed point is amine groups in the matrix surface self assembly optionally, utilizes amine groups ADSORPTION OF GOLD metal catalyst, obtains needed metallic pattern through electroless deposition again;Concrete steps are following:1) matrix surface with the silk screen printing of inertia printing ink on the negative figure of required metallic circuit, under 60 ℃ of conditions, dry; Said matrix is glass, silicon chip or glass cloth insulating material;2) in matrix surface self assembly amine groups:With crosslinking agent polyamine compounds is coated on matrix surface, dry under 50～80 ℃ of conditions, make its surface have amine groups, obtain the matrix of surface modification; Said polyamine compounds be diethylentriamine, triethylenetetramine or molecular weight be 20000～60000 gather Ethylenimine, polyvinylamine, it is 10%～30% solution that water, methyl alcohol or dimethyl formamide are mixed with mass concentration with polyamine compounds; Said crosslinking agent is epoxy resin, oxirane or expoxy propane, dosage of crosslinking agent be polyamine compounds quality 1%～20%;3) the manual removal ink that removes;4) matrix surface to modification carries out adsorption of metal ions: it is that the metal salt solution of 0.5～2mol/L soaked 20 minutes that the matrix of modification is placed 50 ℃, concentration, and slaine is the salt of silver, copper, palladium or nickel;5) chemical plating: immersing the matrix behind the above-mentioned adsorbing metal ions by mass concentration at normal temperatures is in nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% the formaldehyde of 1.5% copper sulphate or 1.5% and the mixed solution that 37% distilled water is formed; Soaked 30 minutes, and can obtain the metallic circuit pattern after the taking-up.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010526700 CN102097345B (en) | 2010-11-01 | 2010-11-01 | Method for directly depositing metal line patterns on surface of insulating base material |
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| CN 201010526700 CN102097345B (en) | 2010-11-01 | 2010-11-01 | Method for directly depositing metal line patterns on surface of insulating base material |
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| CN102097345A CN102097345A (en) | 2011-06-15 |
| CN102097345B true CN102097345B (en) | 2012-08-15 |
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| CN102683876B (en) * | 2012-04-28 | 2016-01-06 | 深圳光启创新技术有限公司 | The preparation technology of Meta Materials |
| CN102810737B (en) * | 2012-07-31 | 2017-09-19 | 深圳光启创新技术有限公司 | A kind of GPRS antenna and electronic installation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1850687A (en) * | 2006-05-18 | 2006-10-25 | 复旦大学 | Method for conducting metal located-sedimentation on glass base material |
| CN1858301A (en) * | 2006-06-08 | 2006-11-08 | 上海交通大学 | Method for chemical plating polyimide film surface |
| CN101600301A (en) * | 2008-06-04 | 2009-12-09 | 富葵精密组件(深圳)有限公司 | Circuit board and preparation method thereof |
| CN101768735A (en) * | 2010-01-14 | 2010-07-07 | 安捷利（番禺）电子实业有限公司 | Metalized method for printing figures on non-conductive substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100663266B1 (en) * | 2005-07-11 | 2007-01-02 | 삼성전기주식회사 | Method for producing fine wiring and conductive board |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1850687A (en) * | 2006-05-18 | 2006-10-25 | 复旦大学 | Method for conducting metal located-sedimentation on glass base material |
| CN1858301A (en) * | 2006-06-08 | 2006-11-08 | 上海交通大学 | Method for chemical plating polyimide film surface |
| CN101600301A (en) * | 2008-06-04 | 2009-12-09 | 富葵精密组件(深圳)有限公司 | Circuit board and preparation method thereof |
| CN101768735A (en) * | 2010-01-14 | 2010-07-07 | 安捷利（番禺）电子实业有限公司 | Metalized method for printing figures on non-conductive substrate |
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Application publication date: 20110615 Assignee: Xin Qiang Electronics (Qingyuan) Co., Ltd. Assignor: Guangxi Teachers College Contract record no.: 2013440000385 Denomination of invention: Method for directly depositing metal line patterns on surface of insulating base material Granted publication date: 20120815 License type: Exclusive License Record date: 20130731 |
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