CN102097345A - Method for directly depositing metal line patterns on surface of insulating base material - Google Patents
Method for directly depositing metal line patterns on surface of insulating base material Download PDFInfo
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- CN102097345A CN102097345A CN 201010526700 CN201010526700A CN102097345A CN 102097345 A CN102097345 A CN 102097345A CN 201010526700 CN201010526700 CN 201010526700 CN 201010526700 A CN201010526700 A CN 201010526700A CN 102097345 A CN102097345 A CN 102097345A
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Abstract
The invention discloses a method for directly depositing metal line patterns on the surface of an insulating base material. The method comprises the following steps of: selectively self-assembling amino groups on the surface of a matrix at fixed points in a screen printing mode of inert ink patterns, adsorbing a metal catalyst by using the amino groups, and obtaining the required metal patterns by chemical plating deposition. The method has the advantages that: by directly depositing metal lines on the insulating base material by the screen printing method, the obtained line patterns are delicate and attractive; the amino groups for adsorbing metal ions are introduced to the surface of the insulating base material by the self-assembling method; and the method has simple process, is quick to form finished products and easy to realize streamline operation, and can greatly reduce the production cost.
Description
Technical field
The invention belongs to the modern electronic technology field, particularly a kind of method at the direct plated metal line pattern in insulating substrate surface.
Background technology
Preparation metallic circuit pattern is a very important production stage of electronics, optics, mechanical devices such as display, biology sensor etc. on insulating substrate.The ripe now method for preparing the pattern metal circuit, normally on the metal film that vacuum evaporation, sputter, plating or electroless deposition coating form, obtain corresponding pattern, and then etching forms by technology such as photoetching, electron beam exposure, focused ion beam exposures.Though these technology can make more superior metallic circuit pattern, develop a kind of metal wire production Technology more easy, low-cost, green low-carbon is the pursuit of industry always.
In order to reach this purpose, the researcher has carried out various trials.Wherein, the direct optionally technology of preparing of growing metal line pattern attracts people's attention the most on insulating substrate.Because this circuit manufacture method has been given up the step of not only loaded down with trivial details but also high energy consumption such as photoetching plate-making, etching metal film, high pollution, make the manufacturing cost of metallic circuit pattern greatly descend, can be rated as follow-on metallic circuit production technology.For example, fixed point is introduced the metal ion presoma on dielectric base surface selectivity ground, again its reduction is formed required metal film pattern.The key of this method success is that substrate surface can pass through the molecule modification, produces groups such as carbonyl, thus with metal ion with ionic bond mode bonding, form slaine type presoma.Therefore, have only some insulating substrate can utilize this kind mode to prepare the metallic circuit pattern such as polyimide film.Also have a kind of method to be, utilize the mode of irradiation, chemical modification, absorption, at insulating substrate surface self assembly amino, sulfydryl isoreactivity group, utilize its absorption palladium, platinum, golden plasma as catalyst, make the metal film pattern that is reduced into of metal ion fixed point by chemical plating.This method is owing to be by self assembly mode modification insulating substrate surface, and the method for self assembly is varied, can be at the scheme of the different self assembly active group of different insulating substrate designs, the research that therefore utilizes this method directly optionally to prepare the metallic circuit pattern on insulating substrate is reported also many.
Summary of the invention
The object of the present invention is to provide a kind of easy, that be easy to large-scale production, direct method of energy at the direct plated metal line pattern in insulating substrates such as glass, silicon chip, glass cloth surface.
The technical scheme that the present invention solves the problems of the technologies described above is:
A kind of method at the direct plated metal line pattern in insulating substrate surface, it is mode by silk screen printing inertia ink logo, fixed point is amine groups in the matrix surface self assembly optionally, utilize amine groups ADSORPTION OF GOLD metal catalyst, obtain needed metallic pattern by electroless deposition again.
Concrete steps are as follows:
1. use the negative figure of required metallic circuit in the silk screen printing of inertia printing ink at matrix surface, under 60 ℃ of conditions, dry; Described matrix is insulating material such as glass, silicon chip or glass cloth.
2) at matrix surface self assembly amino group:
With crosslinking agent polyamine compounds is coated on matrix surface, dry under 50～80 ℃ of conditions, make its surface have amine groups, obtain the matrix of surface modification; Described polyamine compounds is that diethylentriamine, triethylenetetramine or molecular weight are 20000～60000 poly-Ethylenimine, polyvinylamine, and it is 10%～30% solution that water, methyl alcohol or dimethyl formamide are mixed with mass concentration with polyamine compounds; Described crosslinking agent is epoxy resin, oxirane or expoxy propane, dosage of crosslinking agent be polyamine compounds quality 1%～20%;
3) the manual removal ink that removes;
4) matrix surface to modification carries out adsorption of metal ions: it is that the metal salt solution of 0.1～2mol/L soaked 20 minutes that the matrix of modification is placed 50 ℃, concentration, and slaine is the salt of silver, copper, palladium or nickel;
5) chemical plating: immersing the matrix behind the above-mentioned adsorbing metal ions by mass concentration at normal temperatures is in nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% the formaldehyde of 1.5% copper sulphate or 1.5% and the mixed solution that 37% distilled water is formed, soaked 30 minutes, and can obtain the metallic circuit pattern after the taking-up.
The invention has the beneficial effects as follows:
By method for printing screen in the direct plated metal circuit of insulating substrate, the line pattern exquisiteness that obtains, attractive in appearance.Method by self assembly is introduced amine groups in order to adsorbing metal ions on the insulating substrate surface, and this method technology is simple, and finished productization is rapid, is easy to realize the streamlined operation, can reduce production costs greatly.
Embodiment
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Embodiment 1
Direct deposited copper metallic circuit on the silicon chip
(1) the matrix silicon chip surface with the printing of alkaline-resisting ink screen on the negative figure of required metallic circuit, 60 ℃, oven dry in 30 minutes.
(2) will gathering Ethylenimine (molecular weight 25000), to be mixed with mass concentration with methyl alcohol be 20% solution, adds crosslinking agent epoxy resin, and dosage of crosslinking agent is 10% of poly-Ethylenimine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 50 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned silicon chip is placed 50 ℃, the CuSO of 0.5mol/L
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 2
Direct deposited copper metallic circuit on the glass cloth
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of matrix glass cloth, 60 ℃, oven dry in 30 minutes.
(2) polyvinylamine (molecular weight 50000) being mixed with mass concentration with dimethyl formamide is 30% solution, adds crosslinking agent oxirane, and dosage of crosslinking agent is 5% of a polyvinylamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 60 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned film is placed 50 ℃, the Ag of 1.0mol/L
2SO
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 3
Direct nickel deposited metallic circuit on glass
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of substrate glass, 60 ℃, oven dry in 30 minutes.
(2) the diethylentriamine water being mixed with mass concentration is 10% solution, adds the crosslinking agent expoxy propane, and dosage of crosslinking agent is 15% of a diethylentriamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 80 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned glass is placed 50 ℃, the CuSO of 0.8mol/L
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Embodiment 4
Direct deposited copper metallic circuit on glass
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of substrate glass, 60 ℃, oven dry in 30 minutes.
(2) will gathering Ethylenimine (molecular weight 60000), to be mixed with concentration with dimethyl formamide be 25% solution, adds crosslinking agent oxirane, and dosage of crosslinking agent is 1% of poly-Ethylenimine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 70 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned glass is placed 50 ℃, the CuSO of 0.5mol/L
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% copper sulphate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain Cu metal line.
Embodiment 5
Direct nickel deposited metallic circuit on the glass cloth
(1) in the surperficial negative figure that prints required metallic circuit with alkaline-resisting ink screen of matrix glass cloth, 60 ℃, oven dry in 30 minutes.
(2) triethylenetetramine being mixed with mass concentration with methyl alcohol is 30% solution, adds crosslinking agent epoxy resin, and dosage of crosslinking agent is 20% of a triethylenetetramine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 80 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned film is placed 50 ℃, the PdCl of 1.0mol/L
2Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Embodiment 6
Direct nickel deposited metallic circuit on the silicon chip
(1) the matrix silicon chip surface with the printing of alkaline-resisting ink screen on the negative figure of required metallic circuit, 60 ℃, oven dry in 30 minutes.
(2) polyvinylamine (molecular weight 20000) being mixed with mass concentration with methyl alcohol is 30% solution, adds crosslinking agent oxirane, and dosage of crosslinking agent is 10% of a polyvinylamine quality.Matrix is soaked in 24h in the above-mentioned solution, takes out under 60 ℃ of conditions dry.
(3) the manual removal ink that removes.
(4) above-mentioned silicon chip is placed 50 ℃, the Ag of 2mol/L
2SO
4Soaked 20 minutes in the solution.
(5) the silicon chip normal temperature behind the above-mentioned adsorbing metal ions is immersed in the solution of being made up of mass concentration 1.5% nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% formaldehyde and 37% distilled water down, soaked 30 minutes, obtain the nickel metallic circuit.
Claims (1)
- One kind on insulating substrate surface the direct method of plated metal line pattern, it is characterized in that, mode by silk screen printing inertia ink logo, fixed point is amine groups in the matrix surface self assembly optionally, utilize amine groups ADSORPTION OF GOLD metal catalyst, obtain needed metallic pattern by electroless deposition again.Concrete steps are as follows:1) the negative figure of required metallic circuit in the silk screen printing of matrix surface usefulness inertia printing ink is dried under 60 ℃ of conditions; Described matrix is insulating material such as glass, silicon chip or glass cloth;2) at matrix surface self assembly amino group:With crosslinking agent polyamine compounds is coated on matrix surface, dry under 50～80 ℃ of conditions, make its surface have amine groups, obtain the matrix of surface modification; Described polyamine compounds is that diethylentriamine, triethylenetetramine or molecular weight are 20000～60000 poly-Ethylenimine, polyvinylamine, and it is 10%～30% solution that water, methyl alcohol or dimethyl formamide are mixed with mass concentration with polyamine compounds; Described crosslinking agent is epoxy resin, oxirane or expoxy propane, dosage of crosslinking agent be polyamine compounds quality 1%～20%3) the manual removal ink that removes;4) matrix surface to modification carries out adsorption of metal ions: it is that the metal salt solution of 0.5～2mol/L soaked 20 minutes that the matrix of modification is placed 50 ℃, concentration, and slaine is the salt of silver, copper, palladium or nickel;5) chemical plating: immersing the matrix behind the above-mentioned adsorbing metal ions by mass concentration at normal temperatures is in nickelous sulfate, 8% potassium sodium tartrate, 1.5% NaOH, 52% the formaldehyde of 1.5% copper sulphate or 1.5% and the mixed solution that 37% distilled water is formed, soaked 30 minutes, and can obtain the metallic circuit pattern after the taking-up.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010526700 CN102097345B (en) | 2010-11-01 | 2010-11-01 | Method for directly depositing metal line patterns on surface of insulating base material |
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| CN 201010526700 CN102097345B (en) | 2010-11-01 | 2010-11-01 | Method for directly depositing metal line patterns on surface of insulating base material |
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| CN102097345A true CN102097345A (en) | 2011-06-15 |
| CN102097345B CN102097345B (en) | 2012-08-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683876A (en) * | 2012-04-28 | 2012-09-19 | 深圳光启创新技术有限公司 | Preparation process of metamaterial |
| CN102810737A (en) * | 2012-07-31 | 2012-12-05 | 深圳光启创新技术有限公司 | GPRS (general packet radio service) antenna and electronic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1850687A (en) * | 2006-05-18 | 2006-10-25 | 复旦大学 | Method for conducting metal located-sedimentation on glass base material |
| CN1858301A (en) * | 2006-06-08 | 2006-11-08 | 上海交通大学 | Method for chemical plating polyimide film surface |
| US20070006983A1 (en) * | 2005-07-11 | 2007-01-11 | Samsung Electro-Mechanics Co., Ltd. | Method for producing fine circuit lines and conductive board |
| CN101600301A (en) * | 2008-06-04 | 2009-12-09 | 富葵精密组件(深圳)有限公司 | Circuit board and preparation method thereof |
| CN101768735A (en) * | 2010-01-14 | 2010-07-07 | 安捷利（番禺）电子实业有限公司 | Metalized method for printing figures on non-conductive substrate |
-
2010
- 2010-11-01 CN CN 201010526700 patent/CN102097345B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070006983A1 (en) * | 2005-07-11 | 2007-01-11 | Samsung Electro-Mechanics Co., Ltd. | Method for producing fine circuit lines and conductive board |
| CN1850687A (en) * | 2006-05-18 | 2006-10-25 | 复旦大学 | Method for conducting metal located-sedimentation on glass base material |
| CN1858301A (en) * | 2006-06-08 | 2006-11-08 | 上海交通大学 | Method for chemical plating polyimide film surface |
| CN101600301A (en) * | 2008-06-04 | 2009-12-09 | 富葵精密组件(深圳)有限公司 | Circuit board and preparation method thereof |
| CN101768735A (en) * | 2010-01-14 | 2010-07-07 | 安捷利（番禺）电子实业有限公司 | Metalized method for printing figures on non-conductive substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102683876A (en) * | 2012-04-28 | 2012-09-19 | 深圳光启创新技术有限公司 | Preparation process of metamaterial |
| CN102683876B (en) * | 2012-04-28 | 2016-01-06 | 深圳光启创新技术有限公司 | The preparation technology of Meta Materials |
| CN102810737A (en) * | 2012-07-31 | 2012-12-05 | 深圳光启创新技术有限公司 | GPRS (general packet radio service) antenna and electronic device |
| CN102810737B (en) * | 2012-07-31 | 2017-09-19 | 深圳光启创新技术有限公司 | A kind of GPRS antenna and electronic installation |
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| CN102097345B (en) | 2012-08-15 |
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Application publication date: 20110615 Assignee: Xin Qiang Electronics (Qingyuan) Co., Ltd. Assignor: Guangxi Teachers College Contract record no.: 2013440000385 Denomination of invention: Method for directly depositing metal line patterns on surface of insulating base material Granted publication date: 20120815 License type: Exclusive License Record date: 20130731 |
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