CN102569506B - Method for preparing metal electrode of solar battery from silane mask - Google Patents
Method for preparing metal electrode of solar battery from silane mask Download PDFInfo
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- CN102569506B CN102569506B CN201110450393.2A CN201110450393A CN102569506B CN 102569506 B CN102569506 B CN 102569506B CN 201110450393 A CN201110450393 A CN 201110450393A CN 102569506 B CN102569506 B CN 102569506B
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Abstract
The invention discloses a method for preparing a metal electrode of a solar battery from a silane mask, which comprises the following steps: selecting a crystal silicon wafer, and absorbing organic silane on the surface of the crystal silicon wafer to form a silane thin film; then performing local erosion by laser and removing the silane thin film on the surface of the crystal silicon wafer; depositing the metal electrode in the area eroded by laser; and finally, removing the silane thin film in the non-electrode part to prepare the metal electrode of the solar battery. The method of the invention has low cost, simple process and is easy for industrial popularization.
Description
Technical field
The invention belongs to technical field of solar cells, be specifically related to a kind of method that adopts silane mask to prepare solar cell metallic electrode.
Background technology
Electroplated electrode is the new technology of solar cell surface electrode, is conducive to improve the photoelectric conversion efficiency of solar cell.This technology is included in silicon chip surface local deposits metal, and forms certain figure.
But plated metal is high to technical requirement in specific region, bring certain difficulty to industrial batch production, such as easily, at non-crystallizing field plated metal, the way addressing this problem is a lot, and wherein the most feasible way of technique is implemented surperficial mask exactly.
Surface mask is exactly to seal at the region inert material that does not need plated metal, this class way is industrial common, the optical mask method that for example semi-conductor industry is common, although use mask few in solar cell industry, but also just like silicon oxide masking film, and the silicon nitride film of mentioning in the application number patent that is 201010298904.
But mask technique of the prior art, complex procedures, cost are high, are unfavorable for that industry promotes, particularly along with the price of solar cell reduces, in the urgent need to there being low, the simple and feasible technical method of cost.
Summary of the invention
The object of the present invention is to provide a kind of method that adopts silane mask to prepare solar cell metallic electrode, the method cost is low, and technique is simple, is easy to industry and promotes.
Above-mentioned purpose of the present invention is achieved by the following technical solution: a kind of method that adopts silane mask to prepare solar cell metallic electrode, contain following operation: choose crystal silicon chip, organosilan is adsorbed on to crystal silicon chip surface and forms Silan-based Thin Films, then adopt the local Silan-based Thin Films of removing crystal silicon chip surface of laser ablation, and metal electrode deposition is carried out in region after laser ablation, finally remove the Silan-based Thin Films of non-electrode area, make the metal electrode of solar cell.
Adopt the inventive method can make metal carry out metal deposition and growth in appointed area, and have high electrical insulating property and high hydrophobic in non-crystallizing field, this specific character has stoped the deposition growing of metal in non-deposition region efficiently.
Crystal silicon chip of the present invention, comprises the silicon chip that the manufacture of solar cells such as single-chip, multi-wafer, microwafer are used, can be different doping types as N-shaped silicon chip and p-type silicon chip.
Crystal silicon chip of the present invention is carry out can first silk screen printing back surface field and back electrode before organosilan absorption.
Crystal silicon chip of the present invention is carrying out organosilan absorption anteroposterior diameter clean.This clean is mainly that the crystal silicon chip to doing in advance silane mask carries out clean; If be clean crystal silicon chip surface, also can be through this clean.The crystal silicon chip that has plated Silan-based Thin Films is also needed to clean, suitably dry processing again after cleaning simultaneously.
Wherein clean and adopt organic solvent, acidic materials, alkaline matter, water etc., according to the clean-up performance on crystal silicon chip surface, can adopt a water to clean, or only clean with organic solvent, or only clean with acidic materials, or only clean with alkaline matter, these reagent have ethanol, acetone, trichloroethylene, terpinol, methyl alcohol, hexane, octane, hydrofluoric acid, nitric acid, sulfuric acid, hydrochloric acid, NaOH, potassium hydroxide, sodium acid carbonate, sodium carbonate etc.; Also can adopt the combination of these several cleaning methods, and then crystal silicon chip is dried.
Organosilan absorption of the present invention adopts impregnation method or spraying method.Organosilan mainly refers to the siliceous organic substance that contains silane end group, as dodecyltrichlorosilane (hereinafter to be referred as DTCS) etc., the present invention adopts organosilan solution to carry out organosilan absorption, described organosilan solution refers to DTCS to be dissolved in the organosilan solution of making in hexane or octane, and described DTCS and hexane or octane volume ratio are (0.1 ~ 5): 100.Be that described in the present invention, organosilan comprises DTCS, or other silane, when use, the organosilans such as DTCS being dissolved in organic solvent, described organic solvent is the not solvent of hydroxyl, carboxyl isoreactivity group such as hexane, octane.
Wherein, when organosilan absorption adopts impregnation method, be that crystal silicon chip is immersed in organosilan solution, under normal temperature and airtight condition, to soak 0.5 ~ 10 hour, the surface that organosilan can independently be adsorbed on silicon substrate forms Silan-based Thin Films.Also can adopt spray mode, which sprays solution of silane at silicon chip surface, makes it to form one deck liquid film, and unnecessary liquid can flow away, and after solvent evaporates, forms silane adsorbed film.
Organosilan described in the present invention, its hydrophobicity is strong, and there are to larger affinity and adsorption capacity in silicon substrate surface, can be adsorbed on silicon chip, and have certain absorption stability.
In the present invention, adopt local laser ablation to be adsorbed on the silane on silicon substrate surface, be mainly the high temperature that utilizes laser, Partial ablation is adsorbed on the silane on silicon substrate surface, makes it to decompose or volatilization, expose the surface that needs plated metal, the figure that adopts this means just can ablation to go out to need.
The electroplate liquid adopting when metal electrode deposits in the present invention is metal electroplating solution, specifically comprises one or more in plating solution for silver-plating, gold plating bath, electroplated aluminum liquid, nickel plating solution and copper electroplating liquid.
The present invention adopts solvent cleaning while removing non-electrode area Silan-based Thin Films, described solvent comprises that the one in hexane, octane, acetone and trichloroethylene is several, mainly refer to an organic solvent and the silane being adsorbed on silicon chip to be dissolved as hexane or other polar solvent, the surface of reduction crystal silicon chip.
Compared with prior art, tool of the present invention has the following advantages:
(1) adopt the inventive method can realize metal and deposit in appointed area, utilize the way of laser ablation, become various figures in the surface etch of mask processed, these figures are exactly a kind of exposed surface, as the active surface of metal deposition;
(2) the present invention utilizes molecular engineering mask processed, which floor molecule of absorption monolayer or minority, and material consumption is little, and cost is low, and adsorption layer has hydrophobicity and electrical insulating property, can play insulation current effect and isolated substance effect;
(3) silane mask can adopt the way of organic solvent to remove, and the method easily realizes, and has the characteristic of not destroying matrix surface, and application cost is low.
Embodiment
embodiment 1
The employing silane mask that the present embodiment provides is prepared the method for solar cell metallic electrode, contain following operation: choose p-type monocrystalline silicon piece, after adopting hexane to clean, in the following way organosilan is adsorbed on to crystal silicon chip surface and forms Silan-based Thin Films: the silicon chip after clean is immersed in the hexane solution of DTCS, DTCS and hexane volume ratio are 0.5:100, under normal temperature and airtight condition, soak after 2 hours and take out, with a small amount of hexane drip washing, dry, form hydrophobic surface, then laser patterning, adopt local laser ablation and remove the Silan-based Thin Films on crystal silicon chip surface, metal electrode deposition is carried out in non-electrode area region after laser ablation.The metal electroplating solution adopting when metal electrode deposition is for containing gold plating bath, and deposition way is used conventional metal electrode deposition technique.Finally, silicon chip is placed in hexane, adopts the auxiliary way of ultrasonic wave to remove the remaining Silan-based Thin Films of silicon chip surface, prepare the metal electrode of solar cell.
The wherein DTCS solution in the present embodiment, concrete compound method is, in ventilating cabinet, is 0.5:100 meter according to DTCS and hexane volume ratio, gets 5mL DTCS and is dissolved in 1000mL hexane, shakes all.
embodiment 2
The employing silane mask that the present embodiment provides is prepared the method for solar cell metallic electrode, contain following operation: choose the N-shaped polysilicon chip that prepares back surface field and back electrode, the clean front surface of water and ethanol respectively, after dry, immerse in the octane solution of DTCS, under normal temperature and airtight condition, soak 30 minutes, wherein the volume ratio of DTCS and octane is 1:100, take out, dry after adopting hexane to clean, DTCS is adsorbed on crystal silicon chip surface and forms hydrophobic surface, then adopt local laser ablation and remove the Silan-based Thin Films on crystal silicon chip surface, and metal electrode deposition is carried out in region after laser ablation.The metal electroplating solution adopting when metal electrode deposition contains nickel plating solution and plating solution for silver-plating, and deposition way is used conventional metal electrode deposition technique.Finally, in acetone, the way of auxiliary ultrasonic is removed the remaining DTCS of silicon chip surface, removes Silan-based Thin Films, prepares the metal electrode of solar cell.
The wherein DTCS solution in the present embodiment, concrete compound method is shown in embodiment 1.
embodiment 3
The employing silane mask that the present embodiment provides is prepared the method for solar cell metallic electrode, contain following operation: choose polysilicon chip, adopt organosilan solution, by spray mode, organosilan is adsorbed on to crystal silicon chip surface and form Silan-based Thin Films, the hexane solution that wherein organosilan solution is DTCS, the volume ratio of DTCS and hexane is 5:100, then adopt the Silan-based Thin Films on local laser ablation crystal silicon chip surface, and metal electrode deposition is carried out in region after laser ablation, the metal electroplating solution adopting when metal electrode deposition is plating solution for silver-plating and electroplated aluminum liquid, deposition way is used conventional metal electrode deposition technique, finally in hexane and octane, the way of auxiliary ultrasonic is removed the remaining DTCS of silicon chip surface, remove Silan-based Thin Films, prepare the metal electrode of solar cell.
The present invention will be described more than to enumerate specific embodiment.It is pointed out that above-described embodiment, only for the invention will be further described, does not represent protection scope of the present invention, nonessential amendment and adjustment that other people prompting according to the present invention is made, still belong to protection scope of the present invention.
Claims (2)
1. a method that adopts silane mask to prepare solar cell metallic electrode, it is characterized in that containing following operation: choose crystal silicon chip, carry out organosilan and be adsorbed on crystal silicon chip surface formation Silan-based Thin Films, then adopt local laser ablation and remove the Silan-based Thin Films on crystal silicon chip surface, and metal electrode deposition is carried out in region after laser ablation, finally remove the Silan-based Thin Films of non-electrode area, prepare the metal electrode of solar cell; Adopt organosilan solution to carry out organosilan absorption, described organosilan solution refers to dodecyltrichlorosilane to be dissolved in the organosilan solution of making in hexane or octane, and the volume ratio of described dodecyltrichlorosilane and hexane or octane is (0.1 ~ 5): 100.
2. employing silane mask according to claim 1 is prepared the method for solar cell metallic electrode, it is characterized in that: described crystal silicon chip is monocrystalline silicon piece or polysilicon chip.
3. employing silane mask according to claim 1 and 2 is prepared the method for solar cell metallic electrode, it is characterized in that: described crystal silicon chip carries out organosilan absorption anteroposterior diameter clean.
4. employing silane mask according to claim 3 is prepared the method for solar cell metallic electrode, it is characterized in that: the reagent adopting when cleaning comprises one or more in ethanol, acetone, trichloroethylene, terpinol, methyl alcohol, hexane, octane, hydrofluoric acid, nitric acid, sulfuric acid, hydrochloric acid, NaOH, potassium hydroxide, sodium acid carbonate and sodium carbonate.
5. employing silane mask according to claim 1 is prepared the method for solar cell metallic electrode, it is characterized in that: described organosilan absorption adopts impregnation method or spraying method.
6. employing silane mask according to claim 1 is prepared the method for solar cell metallic electrode, it is characterized in that: when described organosilan absorption adopts impregnation method, crystal silicon chip is immersed in organosilan solution, under normal temperature and airtight condition, soak 0.5 ~ 10 hour.
7. employing silane mask according to claim 1 is prepared the method for solar cell metallic electrode, it is characterized in that: the electroplate liquid adopting when metal electrode deposition comprises one or more in plating solution for silver-plating, gold plating bath, electroplated aluminum liquid, nickel plating solution and copper electroplating liquid.
8. employing silane mask according to claim 1 is prepared the method for solar cell metallic electrode, it is characterized in that: adopt organic solvent to remove the Silan-based Thin Films of non-electrode area, described organic solvent comprises one or more in hexane, octane, acetone and trichloroethylene.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110450393.2A CN102569506B (en) | 2011-12-29 | 2011-12-29 | Method for preparing metal electrode of solar battery from silane mask |
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| CN201110450393.2A CN102569506B (en) | 2011-12-29 | 2011-12-29 | Method for preparing metal electrode of solar battery from silane mask |
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| CN102569506A CN102569506A (en) | 2012-07-11 |
| CN102569506B true CN102569506B (en) | 2014-06-18 |
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| CN117894856A (en) * | 2020-04-26 | 2024-04-16 | 隆基绿能科技股份有限公司 | Solar cell metal electrode and preparation method thereof |
| CN115440832A (en) * | 2021-06-03 | 2022-12-06 | 隆基绿能科技股份有限公司 | Solar cell metal electrode and preparation method thereof |
| CN116417529A (en) * | 2021-12-31 | 2023-07-11 | 隆基绿能科技股份有限公司 | Solar cell metal electrode, preparation method thereof and solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1196281A (en) * | 1997-01-17 | 1998-10-21 | 康宁股份有限公司 | Process for production of coating of molecular thickness on substrate |
| CN1264341A (en) * | 1997-05-23 | 2000-08-23 | 杰桑企业 | Method for marking diamond |
| CN102097527A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cells through masked diffusion |
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- 2011-12-29 CN CN201110450393.2A patent/CN102569506B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1196281A (en) * | 1997-01-17 | 1998-10-21 | 康宁股份有限公司 | Process for production of coating of molecular thickness on substrate |
| CN1264341A (en) * | 1997-05-23 | 2000-08-23 | 杰桑企业 | Method for marking diamond |
| CN102097527A (en) * | 2010-10-08 | 2011-06-15 | 常州天合光能有限公司 | Method for preparing N-type solar cells through masked diffusion |
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Address after: No. 69, C District, Leping Town Industrial Park, Sanshui, Foshan, Guangdong Patentee after: Guangdong Asahi Polytron Technologies Inc Address before: 528137 Qi Li No. 69, C District, Sanshui Industrial Park, Leping Town, Foshan City, Guangdong Patentee before: Guangdong Aiko Solar Energy Technology Co., Ltd. |