CN116417529A - Solar cell metal electrode, preparation method thereof and solar cell - Google Patents
Solar cell metal electrode, preparation method thereof and solar cell Download PDFInfo
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- CN116417529A CN116417529A CN202111682953.7A CN202111682953A CN116417529A CN 116417529 A CN116417529 A CN 116417529A CN 202111682953 A CN202111682953 A CN 202111682953A CN 116417529 A CN116417529 A CN 116417529A
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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Abstract
The invention provides a solar cell metal electrode, a preparation method thereof and a solar cell. The preparation method of the solar cell metal electrode comprises the following steps: and fixing the patterned mask made of the high polymer material on the surface of the substrate, and then depositing metal on the surface of the substrate to grow a metal electrode with a required shape on the surface of the substrate to obtain the metal electrode of the solar cell. The invention also provides the metal electrode prepared by the method. The invention further provides a solar cell comprising the metal electrode. The method has the advantages of low manufacturing cost, high conductivity of the prepared electrode, small shading area and high photoelectric conversion rate.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a solar cell metal electrode, a preparation method thereof and a solar cell.
Background
Solar cells are capable of converting solar energy into electrical energy, and are an important source of clean energy. The electrode is a key component of the solar cell and mainly comprises a thin gate electrode and a main gate electrode, and is used for guiding out and collecting current emitted from the inside of the solar cell.
At present, a screen printing silver paste process is generally adopted for preparing the solar cell electrode, and the line width of the obtained electrode is more than 30 mu m. Because the silver paste has higher cost and much lower conductivity than the metal silver, the silver paste needs to be made into a relatively thick electrode grid line in order to meet certain conductive performance requirements, so that more raw materials are needed, and the cost is further increased; and when the electrode grid lines are thicker, more sunlight can be blocked, and the power generation efficiency of the solar cell is reduced.
In addition, there are a few processes for preparing electrode patterns using photoresist or ink and then growing electrodes at pattern spaces using an electroplating process, which requires chemical etching of the photoresist or ink, resulting in the generation of a large amount of waste water, and in addition, the cost of the photolithography process itself is high.
Disclosure of Invention
It is an object of the present invention to provide a novel method of preparing an electrode.
Another object of the present invention is to provide a metal electrode prepared.
Another object of the present invention is to provide a solar cell comprising the metal electrode.
In one aspect, the invention provides a method for preparing a metal electrode of a solar cell, which comprises the following steps: fixing a patterned high-molecular material mask on the surface of a substrate, and then depositing metal on the surface of the substrate (namely the surface of the substrate on which the patterned high-molecular material mask is fixed) so as to grow a metal electrode with a required shape on the surface of the substrate, thereby obtaining the solar cell metal electrode.
In the preparation method, metal is deposited on the surface of the mask plate on which the patterned polymer material is fixed on the substrate, namely, metal is deposited on the interface between the substrate and the patterned polymer material mask plate, and finally, a metal electrode is formed on the surface of one side of the substrate, which is close to the patterned polymer material mask plate.
According to an embodiment of the present invention, after the metal electrode with the desired shape has been grown on the surface of the substrate, the preparation method generally includes the operation of removing the patterned polymer mask. The existing electrode pattern preparation method generally adopts photoresist or ink to form an electrode pattern, and after electrode preparation is completed, the photoresist and the ink are removed in a chemical treatment mode to generate a large amount of wastewater; the mask plate made of the patterned polymer material can be removed by mechanical uncovering, chemical treatment is not needed, the problem of generating a large amount of wastewater is avoided, and meanwhile, the cost is obviously reduced.
According to the specific embodiment of the invention, in the preparation method of the metal electrode of the solar cell, the mask plate made of the patterned polymer material is provided with the slit corresponding to the metal electrode. The number of the slits is generally two or more. The slit is generally formed by laser etching a mask made of a high polymer material. Specifically, when the metal electrode is a collector electrode of a solar cell, the width of each slit may be 1 μm to 100 μm, for example, 1 μm to 30 μm, 5 μm to 30 μm, etc., specifically, the width of each slit may be 1 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 17 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, etc.; when the metal electrode is a bus electrode of a solar cell, the width of each slit may be 100 μm to 500 μm, for example, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc. The specific width of the slit may also be specific to the desired electrode shape. The slit length and the interval between the slits are determined according to the design of the battery electrode.
According to the specific embodiment of the invention, in the preparation method of the solar cell metal electrode, the mask is prepared by etching a mask made of a high polymer material according to the required electrode shape by adopting laser. In some embodiments, the thickness of the polymer mask is generally 1 μm to 100 μm, for example, may be 5 μm to 30 μm, and specifically may be 5 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm. The visible light transmittance of the high polymer mask is generally less than or equal to 90%.
According to the specific embodiment of the invention, in the preparation method of the metal electrode of the solar cell, the process of preparing the mask plate comprises the step of preparing a slit with a required electrode shape on the mask plate made of a high polymer material by using ultra-fast laser (laser with the pulse width of ps or even fs). The method can be used for manufacturing the mask plate for processing fine polymer materials. According to the preparation method of the metal electrode of the solar cell, the polymer material comprises, but is not limited to, polyethylene terephthalate (PET), polyolefin (PO), polyvinyl chloride (PVC), polyimide, biaxially oriented polypropylene or other polymer materials with thickness meeting requirements. Wherein the polyolefin may specifically be a polyolefin film; in some embodiments, the polyolefin may be polyvinyl chloride (PVC), biaxially oriented polypropylene, or the like. The polymer material of the invention can be in the form of a film without adhesive property, or in the form of a film with adhesive property, namely a tape.
According to a specific embodiment of the present invention, one surface of the polymer mask may have an adhesive layer, where the adhesive layer is used to fix the patterned polymer mask and the substrate. The material of the adhesive layer may include one or a combination of two or more of silica gel, acryl gel, polyurethane, rubber, polyisobutylene, etc.
According to the specific embodiment of the invention, the mask made of the polymer material has a good absorption effect on light in a certain wavelength range. When the mask made of patterned polymer materials is formed, laser with specific wavelength can be used for etching, so that the requirement on laser power is reduced, and the cost is saved.
According to the specific embodiment of the invention, when the thickness of the mask made of the polymer material is below 200 mu m, the absorption coefficient of the mask made of the polymer material under the irradiation condition of an ultraviolet light source is generally more than or equal to 20%, further more can be more than or equal to 50% and more than or equal to 80%, wherein the wavelength of the ultraviolet light source is 355+/-15 nm.
According to the specific embodiment of the invention, when the thickness of the high polymer mask is below 200 mu m, the absorption coefficient of the high polymer mask under the irradiation condition of a green light source is generally more than or equal to 20%, further more than or equal to 50% and more than or equal to 80%, wherein the wavelength of the green light source is 530+/-15 nm.
According to the specific embodiment of the invention, when the thickness of the mask made of the polymer material is below 200 mu m, the absorption coefficient of the mask made of the polymer material under the irradiation condition of an infrared light source is generally more than or equal to 20%, more particularly more than or equal to 50% and more than or equal to 80%, wherein the wavelength of the infrared light source is 1045+/-20 nm.
In a specific embodiment of the invention, the viscosity of the mask made of the polymer material is generally adjusted according to the processing requirement, so that the mask made of the patterned polymer material is not separated from the substrate when the electrode is deposited, and the substrate is not damaged when the mask is removed, and the excessive looseness or the excessive adhesion is avoided. In some embodiments, the peel strength of the adhesive layer in the polymeric mask is generally 1-50gf/cm at a preset temperature range, for example, may be 5-40gf/cm, 15-30gf/cm, etc.; wherein the preset temperature range is generally 15-30deg.C, such as 20-30deg.C, 20-25deg.C, etc.
According to the specific embodiment of the invention, in the preparation method of the metal electrode of the solar cell, the substrate is a solar cell sheet without the metal electrode, and the surface of the substrate can be provided with a conductive layer with a conductive function. For example: the conductive layer may comprise one or a combination of a stack of two or more of a TCO layer (transparent conductive layer), a seed layer, a doped layer, etc., preferably the conductive layer is a TCO layer and/or a seed layer.
In a specific embodiment of the present invention, when the conductive layer is one of a TCO layer (transparent conductive layer), a seed layer, and a doped layer, the conductive layer is in direct contact with a patterned high molecular material mask; when the conductive layer comprises a seed layer and layers of other conductive structures, the seed layer is generally a surface layer of the conductive layer and is in direct contact with the patterned high polymer mask; when the conductive layer includes both a TCO layer and other layers of conductive structures other than seed layers (e.g., the conductive layer is a TCO layer + doped layer), the TCO layer is typically a surface layer of the conductive layer that is in direct contact with the patterned high molecular material reticle.
In some embodiments, the material of the seed layer may include: one or more of CuNi (nickel-copper alloy), cu (copper), ni (nickel), niCr (nickel-chromium alloy), cr (chromium), ti (titanium), ag (silver) and the like. According to a specific embodiment of the invention, in the preparation method of the metal electrode of the solar cell, the metal adopted by the seed layer comprises single metal, or alloy, or superposition of multiple metals, or superposition of metal and alloy, or superposition of alloy and alloy.
According to a specific embodiment of the present invention, the seed layer may be formed by a metal deposition method such as magnetron sputtering, vacuum evaporation, or the like.
According to a specific embodiment of the present invention, the seed layer is typically 50nm to 1000nm thick.
According to the specific embodiment of the invention, in the preparation method of the solar cell metal electrode, after the metal electrode with the required shape (namely, the thin line basically consistent with the slit shape of the mask) is grown on the solar cell, the mask made of the patterned polymer material is removed, and the seed layer is etched and removed. In the invention, the thickness of the seed layer is 50nm-1000nm, the thickness of the metal electrode is more than 5 mu m, and the thickness of the electrode is far greater than that of the seed layer, so that the seed layer can be removed completely by adopting an etching process, and the thickness of the electrode part is basically unchanged; the etched seed layer refers to the portion of the seed layer covered by the original mask plate.
According to the specific embodiment of the invention, in the preparation method of the solar cell metal electrode, the adopted etching process comprises wet etching, dry etching and the like. Wherein the dry etching is generally to expose the seed layer to a plasma atmosphere, and remove the seed layer by etching through a physical or chemical reaction. Wet etching generally uses a chemical reagent to chemically react with the seed layer to etch the seed layer.
According to an embodiment of the present invention, when the substrate has a conductive layer including a seed layer, the above-described preparation method may include: and fixing the patterned high-molecular material mask on the surface of a seed layer on the solar cell without the metal electrode, depositing metal on the surface of the seed layer to grow the metal electrode with a required shape on the solar cell, removing the patterned high-molecular material mask after forming the metal electrode, and etching the seed layer to obtain the metal electrode of the solar cell.
According to an embodiment of the present invention, when the substrate has a conductive layer including a TCO layer, the above-described preparation method may include: and fixing the patterned high-molecular material mask on the surface of the TCO layer of the solar cell without the metal electrode, depositing metal on the surface of the TCO layer to grow the metal electrode with a required shape on the solar cell, and removing the patterned high-molecular material mask after forming the metal electrode to obtain the metal electrode of the solar cell.
According to an embodiment of the present invention, when the substrate has a conductive layer including a doped layer, the above-described preparation method may include: and fixing the patterned high-molecular material mask on the surface of the doped layer of the solar cell without the metal electrode, depositing metal on the surface of the doped layer to grow the metal electrode with a required shape on the solar cell, and removing the patterned high-molecular material mask after forming the metal electrode to obtain the metal electrode of the solar cell. In a specific embodiment of the present invention, the substrate may be other film plate, and after the electrode is plated on the substrate, the electrode is transferred to a solar cell to be used as an electrode of a solar cell sheet. For example, the electrodes may be grown on a plastic film (with a complete plane, for example, a transparent PET film), and then the film with the electrodes is directly turned over and fastened to the solar cell without the metal electrode, so as to achieve the purpose of manufacturing the metal electrode of the solar cell.
According to the specific embodiment of the invention, in the preparation method of the solar cell metal electrode, the method for fixing the mask made of the polymer material on the substrate comprises a combination mode of one or two of double faced adhesive tape and glue. If the mask plate is made of adhesive tape with adhesive property, the fixing method can be direct adhesion.
In the invention, the solar cell slice comprises a device which is prepared with one or more PN junctions and can generate a photovoltaic effect.
According to a specific embodiment of the present invention, the preparation method of the solar cell metal electrode specifically may include:
1. processing a mask made of a high polymer material by using laser such as ultra-fast laser according to the shape of the required electrode to obtain a patterned mask made of the high polymer material, wherein the patterned mask made of the high polymer material is provided with slits corresponding to the metal electrodes;
2. fixing the patterned high-molecular mask on the surface of the substrate (if the substrate is provided with a conductive layer, fixing the patterned high-molecular mask on the surface of the conductive layer), wherein the fixing mode can be double-sided adhesive tape, glue, direct adhesion (when the high-molecular mask is provided with an adhesive tape with adhesive performance) and the like;
3. depositing metal (the deposition mode can be electroplating or the like) on one surface of the mask plate on which the patterned polymer material is fixed, so as to grow a metal electrode with a required shape on the substrate;
4. and removing the patterned mask made of the polymer material to obtain the metal electrode of the solar cell (when the substrate is provided with the seed layer as the conductive layer, the seed layer is also required to be etched and removed by dry etching, wet etching and other methods).
On the other hand, the invention also provides the metal electrode prepared by the method. The electrode prepared by the invention can be directly used.
On the other hand, the invention also provides a preparation method of the solar cell, which comprises the process of preparing the metal electrode of the solar cell according to the preparation method of the metal electrode of the solar cell.
The invention also provides a solar cell which comprises the metal electrode. In specific embodiments, the solar cell may be a crystalline silicon solar cell, an amorphous silicon solar cell, or the like. Among them, amorphous silicon solar cells may include thin film cells, stacked cells, perovskite cells, fuel cells, sensitized cells, cadmium telluride cells, and the like.
In summary, the preparation method of the solar cell metal electrode provided by the invention has the following characteristics:
1. the manufacturing cost is low: the cost of the mask plate, the laser preparation process and the electroplating process used by the invention is low;
2. compared with the electrode prepared by screen printing silver paste in the prior art, the electrode prepared by the method has low resistance and high conductivity;
3. the shading area of the metal electrode prepared by the invention is smaller: the metal electrode manufactured by the mask plate can be as thin as 1-30 mu m, even 1-20 mu m, which is thinner than the metal electrode manufactured by the traditional screen printing process (30-80 mu m), has smaller shading, is accurate and controllable, and can effectively improve the power generation efficiency;
4. on the premise of meeting the conductivity and the power generation efficiency, the metal electrode prepared by the method has thinner thickness compared with the metal electrode prepared by the screen printing process, so that the solar cell is less influenced by the stress of the metal electrode.
Drawings
Fig. 1 is a schematic flow chart of a process for manufacturing a metal electrode on a substrate with a conductive layer in the present invention.
FIG. 2 is a flow chart of the method for fabricating a metal electrode on a substrate having a TCO layer according to the present invention.
FIG. 3 is a schematic flow chart of the process of fabricating a metal electrode on a substrate having a TCO layer and a seed layer according to the present invention.
FIG. 4 is a schematic flow chart of the metal electrode on the substrate with doped layer according to the present invention.
FIG. 5 is a schematic flow chart of directly manufacturing a metal electrode on a silicon wafer in the invention.
Symbol description:
the solar cell 01, a conductive layer 02, a patterned mask 03 made of polymer materials, a metal electrode 04, a TCO layer 21, a seed layer 22, a doped layer 05 and a silicon wafer 11.
Detailed Description
The technical solution of the present invention will be described in detail below for a clearer understanding of technical features, objects and advantageous effects of the present invention, but should not be construed as limiting the scope of the present invention.
Example 1
The embodiment provides a metal electrode applied to a crystalline silicon solar cell, and a preparation method of the metal electrode is shown in fig. 1, and specifically includes:
1. selecting a PET mask plate with the thickness of 20 mu m, the peeling strength of 15gf/cm at the temperature of 25 ℃ and the visible light transmittance of 60%, and carrying out laser scribing on the mask plate according to the shape of a required electrode by using ultra-fast laser (ultraviolet light with the wavelength of 355nm as a laser source) to obtain a main slit with the width of 400 mu m corresponding to a bus electrode (main grid line) and a thin slit with the width of 30 mu m corresponding to a collector electrode (thin grid line), so as to form a patterned mask plate 03 made of a polymer material;
2. depositing a copper seed layer (serving as a conductive layer 02) with the thickness of 100nm on the surface of a solar cell 01 (hereinafter referred to as a solar cell) without a metal electrode by utilizing a magnetron sputtering mode, and pasting a patterned high polymer mask 03 subjected to laser scribing on the surface of the copper seed layer of the solar cell 01;
3. electroplating the fixed mask, and forming an electroplated layer (namely an electrode layer) with the thickness of 25 mu m on one surface of the mask so as to form a metal electrode 04 with a required shape on the surface of the solar cell;
4. and removing the mask 04 made of the patterned polymer material, placing the cell exposed out of the seed layer and the electroplated layer in etching liquid (such as acid liquid) for 1 min, and etching the seed layer and the electrode with the tiny part to obtain the solar cell with the metal electrode.
In the above method, the step 1 and the step 2 are performed independently, and the sequence of the two is not particularly limited, or may be performed simultaneously. The same is true for step 1 and step 2 in example 2 and example 3.
Example 2
The embodiment provides a metal electrode applied to a crystalline silicon solar cell, and the preparation method of the electrode comprises the following steps:
1. selecting a PO mask plate with the thickness of 30 mu m, the peeling strength of 30gf/cm at the temperature of 20 ℃ and the visible light transmittance of 50%, and carrying out laser scribing on the mask plate by ultra-fast laser (green light with the wavelength of 535nm as a laser source) according to the shape of a required electrode to obtain a main slit with the width of 200 mu m corresponding to a bus electrode (main grid line) and a thin slit with the width of 20 mu m corresponding to a collector electrode (thin grid line), so as to form a patterned mask plate made of a polymer material;
2. depositing a nickel seed layer with the thickness of 200nm on the surface of the solar cell by utilizing a vacuum evaporation mode;
3. pasting a mask made of patterned high polymer materials subjected to laser scribing on the surface of a nickel seed layer of the solar cell;
4. electroplating the fixed mask, and forming an electroplated layer (namely an electrode layer) with the thickness of 20 mu m on one surface of the mask so as to form a metal electrode with a required shape on the surface of the solar cell;
5. and removing the patterned mask made of the high polymer material, placing the cell exposed out of the seed layer and the electroplated layer in etching liquid for 3 minutes, and etching the seed layer and the electrode with the minimum part to obtain the solar cell with the metal electrode.
Example 3
The embodiment provides a metal electrode applied to a crystalline silicon solar cell, and the preparation method of the electrode comprises the following steps:
1. selecting a PET mask plate with a thickness of 30 mu m, a peeling strength of 20gf/cm at a temperature of 30 ℃ and a visible light transmittance of 60%, and carrying out laser scribing on the mask plate according to a required electrode shape by using ultra-fast laser (ultraviolet light with a laser light source wavelength of 355 nm) to obtain a main slit with a width of 200 mu m corresponding to a bus electrode (main grid line) and a thin slit with a width of 10 mu m corresponding to a collector electrode (thin grid line), so as to form a patterned mask plate made of a polymer material;
2. depositing a copper seed layer with the thickness of 50nm on the surface of the solar cell by utilizing magnetron sputtering;
3. pasting a mask made of patterned high polymer materials subjected to laser scribing on a copper seed layer on the surface of the solar cell;
4. electroplating the fixed mask, and forming an electroplated layer (namely an electrode layer) with the thickness of 20 mu m on one surface of the mask so as to form a metal electrode with a required shape on the surface of the solar cell;
5. and removing the patterned mask plate made of the high polymer material, placing the cell exposed out of the seed layer and the electroplated layer in the plasma atmosphere of argon, and etching the seed layer and the electrode with the minimum part to obtain the solar cell with the metal electrode.
Examples 1 to 3 provide solar cells having metal electrodes prepared with the solar cells as a substrate and a seed layer as a conductive layer. In a specific embodiment of the present invention, the conductive layer may be a TCO layer, and the flow of preparing the metal electrode under this condition is shown in fig. 2; the conductive layer can also be a TCO layer and a seed layer which are deposited sequentially from bottom to top, and the flow of preparing the metal electrode under the condition is shown in figure 3; when the conductive layer is specifically a doped layer, the flow for preparing the metal electrode under the condition is shown in fig. 4; silicon wafers can also be used as substrates instead of solar cells, and the process for preparing metal electrodes under this condition is shown in fig. 5. The process of preparing the metal electrode shown in fig. 2 to 5 is similar to that of examples 1 to 3.
Test example 1
The electrode finally prepared according to the present invention is a pure metal, and the pure copper metal electrode of example 1 and example 3 is exemplified by copper having resistivity ρ=1.75x10 -8 Omega.m. Physical meaning: length 1m cross-sectional area 1mm 2 The resistance of the copper wire of (2) is 1.75X10 -8 Ω。
The prior art adopts a screen printing mode to take silver paste as an electrode, and the typical resistivity of the silver paste is 6 multiplied by 10 -8 Ω·m。
From the comparison result of the resistivity, the metal electrode manufactured by the method has small resistance and higher conductivity. In addition, under the condition that the electrodes are of the same width, the thickness of the electrode formed by electroplating copper is much thinner than that of the electrode formed by silver paste in screen printing, because the smaller the resistivity is, the thinner the thickness requirement is, in addition, the thickness of the electrode is thinned, the change range of thermal expansion and cold contraction of the electrode is small, and the stress influence of the electrode on a battery piece can be effectively reduced.
In addition, the current collector electrode width of screen printing is generally 30 μm or more. The invention can electroplate the collector electrode with the width smaller than 30 mu m by using the patterned mask, can achieve the width between 1 and 30 mu m, reduces the collector electrode width, increases the light absorption area of the battery, and can improve the power generation efficiency.
The above embodiments are merely preferred embodiments of the present invention, and the present invention is not limited to the above embodiments, but can be used in other types of solar cells, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A method for preparing a metal electrode of a solar cell, the method comprising:
and fixing the patterned mask made of the high polymer material on the surface of the substrate, and then depositing metal on the surface of the substrate to grow a metal electrode with a required shape on the surface of the substrate to obtain the metal electrode of the solar cell.
2. The preparation method of claim 1, wherein the patterned high polymer mask is provided with a slit corresponding to the metal electrode;
preferably, when the metal electrode is a collector electrode of a solar cell, the width of each slit is 1 μm to 100 μm, more preferably 1 μm to 30 μm, still more preferably 5 μm to 30 μm;
preferably, when the metal electrode is a bus electrode of a solar cell, the width of each slit is 100 μm to 500 μm.
3. The method according to claim 1 or 2, wherein the patterned polymer material mask is obtained by laser processing the polymer material mask according to a desired electrode shape;
preferably, the thickness of the high molecular material mask plate is 1 μm-100 μm, more preferably 5 μm-30 μm;
preferably, the visible light transmittance of the mask made of the polymer material is less than or equal to 90%;
preferably, the laser is an ultrafast laser.
4. The method according to claim 3, wherein the polymer material comprises one or a combination of two or more of polyethylene terephthalate, polyolefin and polyimide; preferably, the polyolefin comprises polyvinyl chloride and/or biaxially oriented polypropylene;
preferably, one surface of the mask plate made of the polymer material is provided with an adhesive layer;
more preferably, the material of the adhesive layer includes one or a combination of more than two of silica gel, acrylic gel, polyurethane, rubber and polyisobutylene.
5. The preparation method according to claim 3 or 4, wherein when the thickness of the high molecular material mask is below 200 μm, the absorption coefficient of the high molecular material mask under the irradiation condition of an ultraviolet light source is not less than 20%, preferably not less than 50%, more preferably not less than 80%, wherein the wavelength of the ultraviolet light source is 355+ -15 nm;
when the thickness of the high polymer mask is below 200 mu m, the absorption coefficient of the high polymer mask under the irradiation condition of a green light source is more than or equal to 20%, preferably more than or equal to 50%, more preferably more than or equal to 80%, wherein the wavelength of the green light source is 530+/-15 nm;
when the thickness of the mask plate made of the polymer material is below 200 mu m, the absorption coefficient of the mask plate made of the polymer material under the irradiation condition of an infrared light source is more than or equal to 20%, preferably more than or equal to 50%, more preferably more than or equal to 80%, wherein the wavelength of the infrared light source is 1045+/-20 nm.
6. The production method according to claim 4, wherein the adhesive layer has a peel strength of 1 to 50gf/cm, preferably 5 to 40gf/cm, further preferably 15 to 30gf/cm at a predetermined temperature interval; wherein the preset temperature range is 15-30 ℃, preferably 20-30 ℃, and more preferably 20-25 ℃.
7. The preparation method of any one of claims 1-6, wherein the surface of the substrate is provided with a conductive layer, and the patterned high polymer mask is fixed on the surface of the conductive layer of the substrate;
preferably, the conductive layer comprises one or more than two of a TCO layer, a seed layer and a doped layer;
more preferably, the conductive layer comprises a stacked combination of a TCO layer and a seed layer, the seed layer being a surface layer of the conductive layer; wherein the material of the seed layer preferably comprises one or a combination of more than two of CuNi, cu, ni, niCr, cr, ti, ag; the thickness of the seed layer is preferably 50nm to 1000nm.
8. The production method according to any one of claims 1 to 7, further comprising:
removing the mask plate made of the patterned polymer material after the metal electrode with the required shape is grown;
preferably, when the substrate has a conductive layer and the conductive layer includes a seed layer, the manufacturing method further includes an operation of etching off the seed layer after growing a metal electrode of a desired shape;
preferably, the method of etching comprises dry etching and/or wet etching.
9. A solar cell metal electrode obtained by the production method according to any one of claims 1 to 8.
10. A solar cell comprising the solar cell metal electrode of claim 9;
the solar cell includes a crystalline silicon solar cell.
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| CN202111682953.7A CN116417529A (en) | 2021-12-31 | 2021-12-31 | Solar cell metal electrode, preparation method thereof and solar cell |
| PCT/CN2022/132622 WO2023124614A1 (en) | 2021-12-31 | 2022-11-17 | Metal electrode of solar cell, preparation method therefor, and solar cell |
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| CN202111682953.7A CN116417529A (en) | 2021-12-31 | 2021-12-31 | Solar cell metal electrode, preparation method thereof and solar cell |
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Cited By (1)
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| CN118173649A (en) * | 2024-03-04 | 2024-06-11 | 北京大学长三角光电科学研究院 | Cadmium telluride photovoltaic cell electrode and preparation method thereof |
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| CN102569506B (en) * | 2011-12-29 | 2014-06-18 | 广东爱康太阳能科技有限公司 | Method for preparing metal electrode of solar battery from silane mask |
| CN103137791B (en) * | 2013-03-13 | 2016-03-02 | 中国科学院上海微系统与信息技术研究所 | Wet method deposition and Low Temperature Heat Treatment combine and prepare heterojunction solar cell method |
| CN105390569A (en) * | 2015-12-21 | 2016-03-09 | 浙江晶科能源有限公司 | Manufacture method of positive electrode of solar cell |
| US9496429B1 (en) * | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
| CN113555452B (en) * | 2020-04-26 | 2024-03-15 | 隆基绿能科技股份有限公司 | Solar cell metal electrode and preparation method thereof |
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| CN118173649A (en) * | 2024-03-04 | 2024-06-11 | 北京大学长三角光电科学研究院 | Cadmium telluride photovoltaic cell electrode and preparation method thereof |
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