CN102096190B - Metallic photo-thermal drive microswitch and manufacturing method thereof - Google Patents
Metallic photo-thermal drive microswitch and manufacturing method thereof Download PDFInfo
- Publication number
- CN102096190B CN102096190B CN201110022876A CN201110022876A CN102096190B CN 102096190 B CN102096190 B CN 102096190B CN 201110022876 A CN201110022876 A CN 201110022876A CN 201110022876 A CN201110022876 A CN 201110022876A CN 102096190 B CN102096190 B CN 102096190B
- Authority
- CN
- China
- Prior art keywords
- metal
- micro switch
- substrate
- photo
- microswitch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a metallic photo-thermal drive microswitch and a manufacturing method thereof. The manufacturing method provided by the invention is characterized in that the metallic photo-thermal drive microswitch is manufactured by means of a synchrotron radiation LIG technology, the surface of the metallic photo-thermal drive microswitch is subjected into blackening treatment to reduce the reflection of light and increase the absorption of light by means of a chemical sputtering method. Laser is used as a drive source, the drive arm of the metallic photo-thermal drive microswitch is irradiated with the laser beam after aligning and focusing, the metallic photo-thermal drive microswitch is deformed by means of the photo-thermal expansion effect of metal, so that the switching function is carried out. The system comprises a laser, a focusing lens, a substrate, an expansion arm, and a contact and etc. The metallic photo-thermal drive microswitch and the manufacturing method thereof provided by the invention have the advantages that the metallic photo-thermal drive microswitch is manufactured by means of LIG technology, the precision of the microswitch is high, the purpose of batch production can be carried out, the non-contact control purpose of the microswitch can be directly carried out by means of the laser, the electrical conductivity of the microswitch is good, and the microswitch can be directly applied to a circuit.
Description
Technical field
The present invention relates to a kind of metal photo-thermal and drive micro switch and preparation method thereof, be used for the non-contact control of MOEMS circuit.
Background technology
Development along with micro-nano technology; MOEMS (micro-optical-electro-mechanical system; MOEMS) as important branch in the micro-nano technology, developed rapidly in countries in the world, and obtained widespread use at numerous areas.Microdrive is the important component part among numerous MOMES, and by the difference of driving principle, it is driving etc. that common driver can be divided into electromagnetic drive type, static driven type, piezoelectric driven, thermal expansion.Micro switch is a kind of in the numerous application of microdrive.The contact micro switch low in energy consumption, isolation is high, the linearity good, and can be integrated with other electron devices, therefore become the focus of people's research just day by day.
Utilize Electromagnetic Drive, static driven, Piezoelectric Driving or electric heating expansion driven to realize switching function,, need introduce external drive circuit inevitably though be used widely in many occasions.For this reason; The present invention uses for reference the electrothermal drive principle, adopts laser as drive source, and laser beam is collimated to shine metal photo-thermal after focusing on and drive on the actuating arm of micro switch; Utilize the photo-thermal bulking effect of metal to make metal micro switch generation deformation; Thereby the realization switching function need not to introduce external drive circuit, can utilize laser directly micro switch to be carried out non-contact control.And the preparation of the driving of the metal photo-thermal among the present invention micro switch employing synchrotron radiation LIGA technology, the micro switch precision is high, can produce in batches; Electric conductivity is good, can directly apply to circuit, satisfies the demand in national economy such as industry, agricultural, national defence and science and technology and each field of social development.
Summary of the invention
The objective of the invention is to overcome the deficiency of prior art, provide a kind of metal photo-thermal to drive micro switch and preparation method thereof.
Metal photo-thermal drives micro switch and comprises laser instrument, condenser lens, substrate down, micro-cantilever, center disk, cantilever contact, substrate contact, goes up substrate.Be provided with micro-cantilever, center disk, cantilever contact in the following substrate in order; Substrate contact is positioned in the substrate; Laser shines metal photo-thermal and drives on the center disk of micro switch after laser instrument and the focusing of condenser lens collimation; Center disk absorbs the energy of laser, to micro-cantilever conduction heat, and upwards elongation after the micro-cantilever local temperature raises; Thereby the cantilever contact is contacted with substrate contact, realize switching function.
Metal photo-thermal drives micro switch and comprises light device, condenser lens, wide arm, narrow arm, narrow arm contact, right substrate contact, left substrate, right substrate; Substrate right side wall in a left side is provided with wide arm, narrow arm; Narrow arm is provided with narrow arm contact, and right substrate is provided with the right substrate contact that matches with narrow arm contact, and laser shines metal photo-thermal and drives on the wide arm of micro switch after laser instrument and the focusing of condenser lens collimation; Wide arm absorbs the energy of laser; Local temperature deflects down after raising, thereby narrow arm contact is contacted with right substrate contact, realizes switching function.
The step of the method for making of metal photo-thermal driving micro switch is following:
1) with AutoCAD design micro switch drawing;
2) do with Si that framework, SiN are done basement membrane, Ni does absorbing film and adopts beamwriter lithography to make mask graph according to drawing;
3) be coated on the metal film as electroplated electrode with the polymethyl methacrylate photoresist; Utilize synchrotron radiation X-ray to carry out photoetching; In the X-ray process photoresist part that mask substrate shone; The back of developing is fallen with regard to dissolved, obtain one identical with mask arrangement, thickness hundreds of micron, minimum lateral width reach several microns 3 D stereo plastic structure;
4) utilize the metal level below the photoresist to electroplate as electrode; The gap that photoresist is formed is with metal filled; Form a concavo-convex domain of stable metal with the concavo-convex complementation of photoresist figure, then photoresist and the base material that adheres to are removed, obtain moulding the used metal micro switch of casting;
5) resin is injected in the cavity of mould through the aperture on the metal injection molded plate; Behind the hardening of resin; Remove mould and obtain a plastics microstructure, on the microstructure of moulding the casting completion, electroplate the micro switch structure; Remove glue and injection molding plates again, obtain a micro switch blank that hundreds of micron thick, 3-D solid structure are arranged;
6) the blank upper and lower surfaces is carried out polishing, obtain metal micro switch finished product; Adopt the chemical sputtering method to the processing of turning black of the surface of metal micro switch at last.
The material of micro switch is the electric conductivity good metal, after substrate connects lead, can directly use in the MOEMS circuit as switch.Laser instrument and condenser lens constitute drive source jointly, can directly carry out non-contact control to micro switch.Laser beam collimated to shine metal photo-thermal after focusing on and drives on the actuating arm of micro switch, utilizes the photo-thermal bulking effect of metal to make metal micro switch generation deformation, thereby realizes switching function.
Description of drawings
Fig. 1 is that metal photo-thermal drives micro switch (I type) principle of work synoptic diagram;
Fig. 2 is that metal photo-thermal drives micro switch (II type) principle of work synoptic diagram;
Fig. 3 is that metal photo-thermal drives micro switch (I type) CAD design drawing instance;
Fig. 4 is that metal photo-thermal drives micro switch (II type) CAD design drawing instance;
Fig. 5 is a synchrotron radiation LIGA process chart;
Fig. 6 is an overall system diagram;
Among the figure: laser instrument 1, condenser lens 2, substrate 3 down, micro-cantilever 4, center disk 5, cantilever contact 6, substrate contact 7, go up substrate 8, wide arm 9, narrow arm 10, narrow arm contact 11, right substrate contact 12, left substrate 13, right substrate 14.
Embodiment
As shown in Figure 1, metal photo-thermal drives micro switch (I type) and comprises laser instrument 1, condenser lens 2, substrate 3 down, micro-cantilever 4, center disk 5, cantilever contact 6, substrate contact 7, goes up substrate 8; Be provided with micro-cantilever 4, center disk 5, cantilever contact 6 in the following substrate 3 in order; Substrate contact 7 is positioned in the substrate 8; Laser shines metal photo-thermal and drives on the center disk 5 of micro switch after laser instrument 1 and condenser lens 2 collimations focus on; Center disk 5 absorbs the energy of laser, to micro-cantilever 4 conduction heats, upwards elongation after micro-cantilever 4 local temperatures raise; Thereby cantilever contact 6 is contacted with substrate contact 7, realize switching function.
The parallel laser that in laser instrument 1, sends is converged to a bit through condenser lens 2, shines metal photo-thermal and drives on the center disk 5 of micro switch, and center disk 5 absorbs the energy of laser; To micro-cantilever 4 conduction heats; The micro-cantilever 4 local temperatures back that raises produces the expansion elongation of one dimension, and substrate is fixed in micro-cantilever 4 lower ends, the deformation that can only the make progress center disk that arches upward; Thereby cantilever contact 6 is contacted with substrate contact 7, realize switching function.
As shown in Figure 2, metal photo-thermal drives micro switch (II type) and comprises light device 1, condenser lens 2, wide arm 9, narrow arm 10, narrow arm contact 11, right substrate contact 12, left substrate 13, right substrate 14; Left side substrate 13 right side walls are provided with wide arm 9, narrow arm 10; Narrow arm 10 is provided with narrow arm contact 11, and right substrate 14 is provided with the right substrate contact 12 that matches with narrow arm contact 11, and laser shines metal photo-thermal and drives on the wide arm 9 of micro switch after laser instrument 1 and condenser lens 2 collimations focus on; Wide arm 9 absorbs the energy of laser; Local temperature deflects down after raising, thereby narrow arm contact 11 is contacted with right substrate contact 12, realizes switching function.
The parallel laser that in laser instrument 1, sends is converged to a bit through condenser lens 2, shines metal photo-thermal and drives micro switch, shines metal photo-thermal and drives on the wide arm 9 of micro switch; Wide arm 9 absorbs the energy of laser; The local temperature expansion that the back produces one dimension that raises, and do not have expanded by heating with the wide arm 9 terminal narrow arms 10 that link to each other causes the expansion of wide arm 9 one dimensions to be converted into whole micro switch and deflects down; Thereby narrow arm contact 11 is contacted with right substrate contact 12, realize switching function.
Like Fig. 3, shown in Figure 4, metal photo-thermal drives the structure of micro switch, is with the AutoCAD design, can be according to actual needs, and micro switch length can be designed to 500 ~ 5000 microns, and width is 200 ~ 1000 microns, and thickness is 40 ~ 100 microns, and contact spacing is 5 ~ 50 microns.
As shown in Figure 5, the step of the method for making of metal photo-thermal driving micro switch is following:
The step of the method for making of metal photo-thermal driving micro switch is following:
1) with AutoCAD design micro switch drawing;
2) do with Si that framework, SiN are done basement membrane, Ni does absorbing film and adopts beamwriter lithography to make mask graph according to drawing;
3) be coated on the metal film as electroplated electrode with the polymethyl methacrylate photoresist; Utilize synchrotron radiation X-ray to carry out photoetching; In the X-ray process photoresist part that mask substrate shone; The back of developing is fallen with regard to dissolved, obtain one identical with mask arrangement, thickness hundreds of micron, minimum lateral width reach several microns 3 D stereo plastic structure;
4) utilize the metal level below the photoresist to electroplate as electrode; The gap that photoresist is formed is with metal filled; Form a concavo-convex domain of stable metal with the concavo-convex complementation of photoresist figure, then photoresist and the base material that adheres to are removed, obtain moulding the used metal micro switch of casting;
5) resin is injected in the cavity of mould through the aperture on the metal injection molded plate; Behind the hardening of resin; Remove mould and obtain a plastics microstructure, on the microstructure of moulding the casting completion, electroplate the micro switch structure; Remove glue and injection molding plates again, obtain a micro switch blank that hundreds of micron thick, 3-D solid structure are arranged;
6) the blank upper and lower surfaces is carried out polishing, obtain metal micro switch finished product; Adopt the chemical sputtering method to the processing of turning black of the surface of metal micro switch at last.
Overall system diagram is as shown in Figure 6, adopts synchrotron radiation LIGA technology processing and preparing metal photo-thermal to drive micro switch; Laser instrument sends the laser of power and frequency adjustable, is used to control amount of deflection and the switching frequency that metal photo-thermal drives micro switch; Metal photo-thermal drives micro switch and is applied to MOEMS, realizes the control to physical circuit.
Claims (1)
1. a metal photo-thermal drives micro switch, it is characterized in that comprising laser instrument (1), condenser lens (2), substrate (3) down, micro-cantilever (4), center disk (5), cantilever contact (6), substrate contact (7), goes up substrate (8); Be provided with micro-cantilever (4), center disk (5), cantilever contact (6) in the following substrate (3) in order; Substrate contact (7) is positioned in the substrate (8); Laser shines metal photo-thermal and drives on the center disk (5) of micro switch after laser instrument (1) and the focusing of condenser lens (2) collimation; Center disk (5) absorbs the energy of laser, to micro-cantilever (4) conduction heat, and upwards elongation after micro-cantilever (4) local temperature raises; Thereby cantilever contact (6) is contacted with substrate contact (7), realize switching function; The step of concrete method for making is following:
1) with AutoCAD design micro switch drawing;
2) do with Si that framework, SiN are done basement membrane, Ni does absorbing film and adopts beamwriter lithography to make mask graph according to drawing;
3) be coated on the metal film as electroplated electrode with the polymethyl methacrylate photoresist; Utilize synchrotron radiation X-ray to carry out photoetching; In the X-ray process photoresist part that mask substrate shone; The back of developing is fallen with regard to dissolved, obtain one identical with mask arrangement, thickness hundreds of micron, minimum lateral width reach several microns 3 D stereo plastic structure;
4) utilize the metal level below the photoresist to electroplate as electrode; The gap that photoresist is formed is with metal filled; Form a concavo-convex domain of stable metal with the concavo-convex complementation of photoresist figure, then photoresist and the base material that adheres to are removed, obtain moulding the used metal micro switch of casting;
5) resin is injected in the cavity of mould through the aperture on the metal injection molded plate; Behind the hardening of resin; Remove mould and obtain a plastics microstructure, on the microstructure of moulding the casting completion, electroplate the micro switch structure; Remove glue and injection molding plates again, obtain a micro switch blank that hundreds of micron thick, 3-D solid structure are arranged;
6) the blank upper and lower surfaces is carried out polishing, obtain metal micro switch finished product; Adopt the chemical sputtering method to the processing of turning black of the surface of metal micro switch at last.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110022876A CN102096190B (en) | 2011-01-20 | 2011-01-20 | Metallic photo-thermal drive microswitch and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110022876A CN102096190B (en) | 2011-01-20 | 2011-01-20 | Metallic photo-thermal drive microswitch and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102096190A CN102096190A (en) | 2011-06-15 |
| CN102096190B true CN102096190B (en) | 2012-09-19 |
Family
ID=44129353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110022876A Expired - Fee Related CN102096190B (en) | 2011-01-20 | 2011-01-20 | Metallic photo-thermal drive microswitch and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102096190B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112047296B (en) * | 2020-09-18 | 2022-07-29 | 南开大学 | Method for realizing bidirectional atomic switch by thermal expansion of light-operated substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201966133U (en) * | 2011-01-20 | 2011-09-07 | 浙江大学 | Crack pass of metal light and heat drive |
-
2011
- 2011-01-20 CN CN201110022876A patent/CN102096190B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201966133U (en) * | 2011-01-20 | 2011-09-07 | 浙江大学 | Crack pass of metal light and heat drive |
Non-Patent Citations (3)
| Title |
|---|
| Andrew D. Oliver et al..Photothermal Surface-Micromachined Actuators.《IEEE TRANSACTIONS ON ELECTRON DEVICES》.2003,第50卷(第4期),1156-1157. * |
| 伊福廷等.微细加工新技术-LIGA技术.《微细加工技术》.1993,(第4期),1-7. * |
| 王乐妍等.激光光热控制触点开关式微驱动机构及实验研究.《光电子激光》.2008,第19卷(第11期),1450-1453. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102096190A (en) | 2011-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Watt et al. | Ion beam lithography and nanofabrication: a review | |
| JP4200223B2 (en) | Microlens mold, microlens and manufacturing method thereof | |
| CN103698846B (en) | A kind of preparation method of flexible metal photonic crystal | |
| Lian et al. | Rapid fabrication of semiellipsoid microlens using thermal reflow with two different photoresists | |
| TW200416195A (en) | Manufacturing structured elements | |
| CN101221358A (en) | Curved substrate multi-phase micro-optical element processing method based on flexible ultraviolet die mold | |
| CN103149607B (en) | A kind of fabricating method of microlens array be shaped based on template electric induction | |
| Zhang et al. | Fabrication of a microlens array with controlled curvature by thermally curving photosensitive gel film beneath microholes | |
| JP2007110122A (en) | Method for manufacturing high sag lens, and high sag lens manufactured thereby | |
| CN102962583A (en) | Method and device for forming plastic part microstructure based on laser heating | |
| CN103913784A (en) | Method for preparing polymer micro lens array | |
| CN101823690A (en) | Manufacturing method of SU-8 nano fluid system | |
| Liu et al. | Dynamic laser prototyping for biomimetic nanofabrication | |
| WO2012122751A1 (en) | Method for fabricating paraboloidal type two-dimensional focusing x-ray combined refraction lens | |
| Rajput et al. | Solution-cast high-aspect-ratio polymer structures from direct-write templates | |
| CN102253435A (en) | Micromachining method for manufacturing polymer cylindrical microlens by electric field induction | |
| CN106405692B (en) | A kind of preparation technology of electric field induction fly's-eye lens multilevel hierarchy | |
| CN102096190B (en) | Metallic photo-thermal drive microswitch and manufacturing method thereof | |
| CN102910574A (en) | Manufacturing method for non-silicon MEMS micro-channel group | |
| CN201966133U (en) | Crack pass of metal light and heat drive | |
| CN101717068A (en) | Method for preparing polymeric micro-fluidic chip based on hydrogel male mold | |
| CN102200609A (en) | Method for manufacturing flexible optical plates, and flexible optical plate manufactured by utilizing same and backlight module | |
| Qi et al. | Using silicon molds for ultrasonic embossing on polymethyl methacrylate (PMMA) substrates | |
| CN102320132A (en) | Process for micro replicating lyosol by induction of electric field | |
| KR20110048061A (en) | Method for manufacturing light trapping layer on transparent substrate for use in photovoltaic device, photovoltaic device and method for manufacturing photovoltaic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120919 Termination date: 20150120 |
|
| EXPY | Termination of patent right or utility model |