CN102082142B - Packaging structure - Google Patents
Packaging structure Download PDFInfo
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- CN102082142B CN102082142B CN2009102465144A CN200910246514A CN102082142B CN 102082142 B CN102082142 B CN 102082142B CN 2009102465144 A CN2009102465144 A CN 2009102465144A CN 200910246514 A CN200910246514 A CN 200910246514A CN 102082142 B CN102082142 B CN 102082142B
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- emitting diode
- control chip
- encapsulating structure
- transparent substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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Abstract
The invention provides a packaging structure, comprising a light transparent substrate, a plurality of light emitting diodes and a control chip. The light transparent substrate is provided with a bearing surface. Each light emitting diode is provided with a light exiting side and a jointing side which are opposite to each other, and each light emitting diode is configured on the bearing surface in such a manner that the light exiting side faces towards the light transparent substrate. The control chip is configured at the jointing side of the light emitting diode and is electrically connected with the light emitting diodes.
Description
Technical field
The present invention relates to a kind of semiconductor structure, and particularly relate to a kind of encapsulating structure.
Background technology
That light-emitting diode has is long such as the life-span, volume is little, high shock resistance, low-heat produces and advantage such as low power consumption, therefore has been widely used in indicating device or the light source in family expenses and the various device.In recent years, light-emitting diode is towards multicolour and high brightness development, so its application has extended to large-scale outdoor signboard, traffic signal light and association area.In future, light-emitting diode even possibly become the main lighting source that has power saving and environment-friendly function concurrently.
The encapsulation of existing a plurality of light-emitting diodes can roughly be divided into two types: two kinds on routing encapsulation type and chip package type; Wherein lower with its cost of the formed packaging body of routing mode, then have better radiating effect to cover the formed packaging body of crystal type.In general, the encapsulation of a plurality of light-emitting diodes is a majority light-emitting diode chip for backlight unit to be disposed on the circuit board encapsulate, wherein alternative configuration control chip on the circuit board.When disposing control chip on the circuit board, control chip can with the light-emitting diode chip for backlight unit separate package; When not having the configuration control chip on the circuit board, then the mode of external control chip capable of using is come the light-emitting diode chip for backlight unit on the control circuit board.In other words, light-emitting diode chip for backlight unit and control chip are to carry out encapsulation procedure respectively, and therefore the number of times of encapsulation can't reduce, and being prone to increases fabrication steps and production cost, and is inappropriate for volume production.
In addition, when being disposed at circuit board on to cover brilliant mode light-emitting diode chip for backlight unit, the flip chip contact of large tracts of land and respective leds chip must be arranged on the circuit board.Especially, in order to keep the smoothness that covers the light-emitting diode chip for backlight unit behind the crystalline substance, light-emitting diode chip for backlight unit can have the flip chip contact more than three.This point is unfavorable for the encapsulation of undersized light-emitting diode chip for backlight unit; And because light-emitting diode chip for backlight unit is to adopt the single face bright dipping; And circuit board can be done in reflection place in order to cover brilliant surface usually, and therefore when light-emitting diode electrically connected through the flip chip contact on conductive projection and the circuit board, the part light that it sent must be through repeatedly reflection and refraction; And repeatedly the P-N through light-emitting diode connects face (junction), could penetrate.Thus, light path is longer, and light loss is also higher.In other words, the large-area flip chip contact on the circuit board can influence the luminous efficiency of light-emitting diode.
In addition, used substrate of chip package or conductive projection also possibly produce because of the influence of processing procedure tolerance and be uneven or situation not of uniform size.That is to say; When light-emitting diode chip for backlight unit is disposed on the circuit board; The light-emitting area of light-emitting diode chip for backlight unit can be because the employed substrate of chip package just differs or to be connected in conductive projection between light-emitting diode chip for backlight unit and the circuit board not of uniform size and produce difference in height, and meaning is that the light-emitting area of light-emitting diode is not to be positioned on the same plane.Thus, the even light mixing degree that yet can cause encapsulating dose rate loss and the light that light-emitting diode chip for backlight unit sent is not good, and then influence the light effect that goes out that the multicore sheet of light-emitting diode encapsulates.In addition, relatively poor and its refractive index of the radiating effect of general packing colloid can't be complementary with light-emitting diode, and the radiating effect and the light extraction efficiency of the light-emitting diode after causing encapsulating are low.
Summary of the invention
The present invention provides a kind of encapsulating structure, and its a plurality of light-emitting diodes are disposed on the load-bearing surface of transparent substrates to transparent substrates with the bright dipping side.Meaning promptly can make a plurality of light-emitting diodes entirely be arranged on the transparent substrates.Thus, the light that light-emitting diode sent can penetrate transparent substrates from same plane, has the preferable light effect that goes out.
The present invention provides a kind of encapsulating structure, and its control chip is disposed on the light-emitting diode that entirely is arranged on the transparent substrates to cover crystal type, is applicable to the encapsulation of the undersized light-emitting diode of polycrystalline grain, and helps volume production and reduce cost of manufacture.
The present invention provides a kind of encapsulating structure, and its control chip directly encapsulates with light-emitting diode, can effectively dwindle the overall package structural volume and reduce production costs.
The present invention provides a kind of encapsulating structure, and its transparent substrates has the refractive index that is complementary with light-emitting diode, helps to increase whole light extraction efficiency.Simultaneously, this transparent substrates also can provide better heat radiating effect to light-emitting diode.
The present invention proposes a kind of encapsulating structure, and it comprises a transparent substrates, a plurality of light-emitting diode and at least one control chip.Transparent substrates has a load-bearing surface.Each light-emitting diode has relative a bright dipping side and an engage side, and each light-emitting diode is disposed on the load-bearing surface to transparent substrates with the bright dipping side.Control chip is disposed at the engage side of light-emitting diode, and control chip and light-emitting diode electric connection.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises at least one external module, is disposed on the load-bearing surface or control chip of transparent substrates, and wherein control chip electrically connects through an external module and an external circuit.
In an embodiment of the present invention, above-mentioned external module electrically connects through chip bonding mode, routing juncture, welding manner or conducting resinl and control chip.
In an embodiment of the present invention, above-mentioned external module comprises a lead frame, a metal derby or a printed circuit board (PCB).
In an embodiment of the present invention, above-mentioned external module is disposed on the load-bearing surface of transparent substrates, and external module has identical height in fact with light-emitting diode.
In an embodiment of the present invention; Above-mentioned at least one control chip comprises one first control chip and one second control chip; Each light-emitting diode has one first pin and one second pin, and first control chip and second control chip distinctly are connected to first pin and second pin of same light-emitting diode.
In an embodiment of the present invention; Above-mentioned encapsulating structure also comprises at least one bridge assembly; Be disposed on the load-bearing surface or control chip of transparent substrates; At least one control chip comprises one first control chip and one second control chip, and bridge assembly electrically connects first control chip and second control chip.
In an embodiment of the present invention, above-mentioned bridge assembly electrically connects first control chip and second control chip through chip bonding mode, routing juncture, welding manner or conducting resinl.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises light adjustment material, is disposed at the surperficial or inner of transparent substrates.
In an embodiment of the present invention, above-mentioned light adjustment material comprises fluorescent material, scatterer or reflecting material.
In an embodiment of the present invention, above-mentioned light adjustment material is that a continuous light adjustment material layer or an a plurality of light is adjusted the material pattern.
In an embodiment of the present invention, the corresponding setting of above-mentioned light adjustment material pattern with light-emitting diode.
In an embodiment of the present invention, above-mentioned transparent substrates is the multi-layer sheet structure, and light adjustment material is positioned at the surperficial or inner of each veneer structure.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises a plurality of conductive components, be disposed between the engage side and control chip of each light-emitting diode, and control chip is electrically connected to pairing light-emitting diode through conductive component.
In an embodiment of the present invention; The engage side of above-mentioned each light-emitting diode has one first junction surface and one second junction surface, and conductive component comprises a plurality of first conductive components and a plurality of second conductive component, and first conductive component is disposed at first junction surface of each light-emitting diode respectively; Second conductive component is disposed at second junction surface of each light-emitting diode respectively; First junction surface and second junction surface have a difference in height, and difference in height is h1, and the height of each first conductive component is h2; The height of each second conductive component is h3, and h1+h2=h3.
In an embodiment of the present invention, above-mentioned each first conductive component or each second conductive component system is made up of a conductive projection or is formed by a plurality of conductive projection storehouses.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises a packing colloid, is disposed on the load-bearing surface of transparent substrates, and coats light-emitting diode at least.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises a radiating subassembly, is disposed at control chip relatively away from a side of transparent substrates.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises a printing opacity glue-line, is disposed between the load-bearing surface of bright dipping side and transparent substrates of each light-emitting diode.
In an embodiment of the present invention, above-mentioned encapsulating structure also comprises light path adjustment structure, is disposed on the bottom surface with respect to load-bearing surface of transparent substrates.
In an embodiment of the present invention, above-mentioned light path adjustment structure comprises a plurality of lens or a plurality of surface micro-structure.
In an embodiment of the present invention, above-mentioned light path adjustment structure and transparent substrates are formed in one.
Based on above-mentioned, light-emitting diode of the present invention is disposed on the load-bearing surface of transparent substrates to transparent substrates with the bright dipping side, and control chip is disposed on the light-emitting diode that entirely is arranged on the transparent substrates to cover crystal type.Therefore, the present invention is applicable to the encapsulation of undersized light-emitting diode, and helps volume production and reduce cost of manufacture.In addition because control chip of the present invention can directly encapsulate with light-emitting diode, the volume that therefore can effectively dwindle the overall package structure with reduce production costs.In addition, transparent substrates of the present invention can have the refractive index that is complementary with light-emitting diode, helps to increase the light extraction efficiency of overall package structure.Simultaneously, this transparent substrates also can provide good radiating effect to light-emitting diode.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
Description of drawings
Fig. 1 is the generalized section of a kind of encapsulating structure of one embodiment of the invention;
Fig. 2 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 3 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 4 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 5 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 6 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 7 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 8 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Fig. 9 is the light-emitting diode of one embodiment of the invention and the sketch map of light adjustment material position corresponding relation;
Figure 10 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 11 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 12 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 13 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 14 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 15 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 16 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention;
Figure 17 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.
Main Reference numeral:
100a～100p: encapsulating structure; 110a～110c: transparent substrates;
112: load-bearing surface; 114: the bottom surface;
116～118: veneer structure; 120a～120f, 120a1～120e1,121: light-emitting diode;
122a～122e: bright dipping side; 124a～124e, 124c1: engage side;
124c2: first junction surface; 124c3: second junction surface;
126a: first pin; 126b: second pin;
130: control chip; 132: the first control chips;
134: the second control chips; 140a, 140b: external module;
150a, 150b: bridge assembly; 160a～160f, 162: light adjustment material;
170: conductive component; 170a: first conductive component;
170b: second conductive component; 172: conducting resinl;
180: packing colloid; 185: radiating subassembly;
190: the printing opacity glue-line; 195a, 195b: light path adjustment structure;
H1: difference in height; H2, h3: highly.
Embodiment
Fig. 1 is the generalized section of a kind of encapsulating structure of one embodiment of the invention.Please refer to Fig. 1, in the present embodiment, encapsulating structure 100a comprises a transparent substrates 110a, a plurality of light-emitting diode 120a～120e and at least one control chip 130.Transparent substrates 110a has a load-bearing surface 112, and wherein transparent substrates 110a for example is a glass substrate, a ceramic substrate or a transparent plastic substrate.Each light-emitting diode 120a (or light-emitting diode 120b, 120c, 120d, 120e) has a bright dipping side 122a (or bright dipping side 122b, 122c, 122d, 122e) and an engage side 124a with respect to bright dipping side 122a (or bright dipping side 122b, 122c, 122d, 122e) (or engage side 124b, 124c, 124d, 124e), and each light-emitting diode 120a (or light-emitting diode 120b, 120c, 120d, 120e) is disposed on the load-bearing surface 112 of transparent substrates 110a towards transparent substrates 110a with bright dipping side 122a (or bright dipping side 122b, 122c, 122d, 122e).It is last that control chip 130 is disposed at engage side 124a～124e of light-emitting diode 120a～120e, and control chip 130 electrically connects with light-emitting diode 120a～120e.
Particularly; The control chip 130 of present embodiment comprises one first control chip 132 and one second control chip 134; Wherein first control chip 132 electrically connects with light-emitting diode 120a～120c through a plurality of conductive components 170, and second control chip 134 also electrically connects with light-emitting diode 120d～120e through conductive component 170.The conductive component 170 here can be a conductive projection.In the embodiment that other does not illustrate, conductive component 170 also can be a conducting resinl, and the quantity of control chip 130 also can be merely more than one or three, does not limit at this.
Owing to light-emitting diode 120a～120e is disposed on the load-bearing surface 112 towards transparent substrates 110a with bright dipping side 122a～122e; Therefore when first control chip 132 and second control chip 134 are distinguished driven for emitting lights diode 120a～120c and light-emitting diode 120d～120e; The light that light-emitting diode 120a～120e sent can penetrate transparent substrates 110a and be passed to the external world from same plane; Can make the light emission rate of light-emitting diode 120a～120e consistent; And can promote the mixed light effect of the light of whole light-emitting diode 120a～120e, meaning is that the even light mixing degree is preferable.In other words, the encapsulating structure 100a of present embodiment has the preferable light effect that goes out.In addition, control chip 130 is that to be disposed at the light-emitting diode 120a～120e that entirely is arranged on the transparent substrates 110a last to cover crystal type.Thus, the number that single covers light-emitting diode 120a～120e chip package that brilliant manufacturing process accomplishes can increase, and can effectively reduce cost and is suitable for volume production.Simultaneously,, therefore existing brilliant processing procedure and the process apparatus of covering can be used, the production of encapsulating structure 100a and the yield of product can be improved because the flip chip structure that covers crystal type and existing chip that present embodiment adopted is similar.In addition because control chip 130 is directly to encapsulate with light-emitting diode 120a～120e, the volume that therefore can effectively dwindle overall package structure 100a with reduce production costs.
What deserves to be mentioned is that the transparent substrates 110a of present embodiment can select the refractive index that is complementary with light-emitting diode 120a～120e, thus, can effectively increase the whole light extraction efficiency of encapsulating structure 100a.Simultaneously; This transparent substrates 110a also can be used as the heating panel of light-emitting diode 120a～120e; Meaning is that light-emitting diode 120a～120e can transfer heat to the external world through printing opacity base version 110a; Can effectively reduce the temperature of overall package structure 100a, so that encapsulating structure 100a has better reliability degree.In addition, in general, the material of control chip 130 is generally silicon substrate, and wherein silicon substrate is good heat carrier, so control chip 130 also can help to promote the radiating efficiency of overall package structure 100a.
The encapsulating structure 100a of present embodiment can also comprise two external module 140a, 140b, wherein external module 140a, a 140b metal derby for example.In detail; External module 140a is disposed on the load-bearing surface 112 of transparent substrates 110a; And external module 140a has identical height in fact with light-emitting diode 120a～120e; And external module 140b is disposed on first control chip, the 132 relative side surfaces away from transparent substrates 110a, and first control chip 132 can increase the application of encapsulating structure 100a through external module 140a, 140b and external circuit (not illustrating) electric connection.External module 140a can electrically connect by the mode and first control chip 132 with chip bonding through conductive component 170 (for example being conductive projection), and external module 140b can electrically connect through the conducting resinl 172 and first control chip 132.Certainly, in the embodiment that other does not illustrate, external module 140a, 140b also can pass through routing juncture, welding manner or other suitable mode and first control chip 132 electrically connects, at this not as limit.
What deserves to be mentioned is; The present invention does not limit number, position and the kenel of external module 140a, 140b; Though external module 140a, the 140b that reaches mentioned herein is embodied as two metal derbies; And be respectively on the load-bearing surface 112 that is positioned at transparent substrates 110a and first control chip 132 relatively on the side surfaces away from transparent substrates 110a, but in the embodiment that other does not illustrate, the kenel of external module 140a, 140b also can be a circuit board or a lead frame; One of them electrically connects control chip 130 also can only to select external module 140a or 140b for use; External module 140a or 140b can only be disposed at also that transparent substrates 110a goes up, first control chip 132 is away from the side surface of transparent substrates 110a or on the side surface of second control chip 134 away from transparent substrates 110a; Still belong to the adoptable technical scheme of the present invention, do not break away from the scope of institute of the present invention desire protection.
Below will utilize a plurality of different embodiment to come to explain respectively the design of encapsulating structure 100b～100p.In this mandatory declaration is that following embodiment continues to use the assembly label and the partial content of previous embodiment, wherein adopts identical label to represent identical or approximate assembly, and has omitted the explanation of constructed content.Explanation about clipped can be with reference to previous embodiment, and following embodiment no longer repeats to give unnecessary details.
Fig. 2 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to figure 1 and Fig. 2; The encapsulating structure 100b of Fig. 2 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the light-emitting diode 120f of the encapsulating structure 100b of Fig. 2 has one first pin 126a and one second pin 126b, and first control chip 132 and second control chip 134 pass through the first pin 126a and the second pin 126b that is connected to light-emitting diode 120f through conductive component 170 respectively.That is to say that light-emitting diode 120f electrically connects with first control chip 132 and second control chip 134 through the conductive component 170 that is positioned on the first pin 126a and the second pin 126b simultaneously.In other words; Light-emitting diode 120a, 120b, 120d, 120e, 120f can be driven by single control chip or a plurality of control chip; Meaning is that light-emitting diode 120a, 120b can be driven by first control chip 132; Light-emitting diode 120d, 120e can be driven by second control chip 134, and light-emitting diode 120f can come driven in common by first control chip 132 and second control chip 134.
Fig. 3 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to figure 1 and Fig. 3; The encapsulating structure 100c of Fig. 3 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100c of Fig. 3 also comprises two bridge assembly 150a, 150b; Wherein bridge assembly 150a is disposed on the load-bearing surface 112 of transparent substrates 110a; And bridge assembly 150a is electrically connected to first control chip 132 and second control chip 134 through conductive component 170 to cover the brilliant mode that combines, and bridge assembly 150b is disposed on the control chip 130, and bridge assembly 150b electrically connects first control chip 132 and second control chip 134 through conducting resinl 172. Bridge assembly 150a, 150b can for example be a lead frame, a metal derby or a printed circuit board (PCB).
In this mandatory declaration be; The present invention does not limit number and the kenel of bridge assembly 150a, 150b; Though bridge assembly 150a, the 150b that reaches mentioned herein is embodied as two; And be respectively on the load-bearing surface 112 that is positioned at transparent substrates 110a and control chip 130 relatively on the side surfaces away from transparent substrates 110a; And brilliant the combination be electrically connected to first control chip 132 and second control chip 134 through covering respectively with conducting resinl 172, but in the embodiment that other does not illustrate, also can only select for use bridge assembly 150a or 150b wherein 1 come bridge joint control chip 130; Bridge assembly 150a or 150b are also configurable on the transparent substrates 110a or on the side surface of control chip 130 away from transparent substrates 110a; Bridge assembly 150a or 150b also can pass through alternate manner; For example be that routing juncture, welding manner or other mode that is fit to electrically connect first control chip 132 and second control chip 134; Still belong to the adoptable technical scheme of the present invention, do not break away from the scope of institute of the present invention desire protection.
Fig. 4 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to figure 1 and Fig. 4; The encapsulating structure 100d of Fig. 4 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100d of Fig. 4 also comprises light adjustment material 160a; Wherein light adjustment material 160a is disposed on the load-bearing surface 112 of transparent substrates 110a, and light adjustment material 160a is that a continuous light is adjusted material layer.In addition, light adjustment material 160a can for example be fluorescent material or diffusing color substance.When the light that is sent as light-emitting diode 120a～120e gets into transparent substrates 110a from same plane; Light adjustment material 160a can change the wavelength and adjustment light path of light; Make the light that penetrates transparent substrates 110a have the preferable uniformity, and then can promote the light effect that goes out of encapsulating structure 100d.
What deserves to be mentioned is that the present invention does not limit the position of light adjustment material 160a.For example, in other embodiments, please refer to Fig. 5; The light of encapsulating structure 100e adjustment material 160b can in be embedded among the transparent substrates 110a, perhaps, please refer to Fig. 6; The light adjustment material 160c of encapsulating structure 100f is configurable in the side of transparent substrates 110a; Perhaps, please refer to Fig. 7, on the bottom surface 114 of the configurable relative load-bearing surface 112 in transparent substrates 110a of the light of encapsulating structure 100g adjustment material 160d.In brief; Light adjustment material 160a～160d can arbitrarily be disposed at according to user's demand transparent substrates 110a the surface or in be embedded among the transparent substrates 110a; Certainly, the surface that also can be disposed at transparent substrates 110a simultaneously with in be embedded among the transparent substrates 110a, at this not as limit.
Certainly, the present invention does not limit the form of light adjustment structure 160a yet.For example; In other embodiments; Please refer to Fig. 8; The light adjustment material 160e of encapsulating structure 100h can be a plurality of light adjustment material patterns, for example is the uniform discontinuous sheet patterns of a plurality of density distribution, and this light adjustment material 160e can for example be fluorescent material, scatterer or reflecting material.The adjustment of the light here material 160e be distributed in transparent substrates 110a the surface and in be embedded in the transparent substrates 110a; It is except adjustable lay the grain energy distributions (being light shape), and the light adjustment material 160e that is disposed at the load-bearing surface 112 of transparent substrates 110a also can be used as when light-emitting diode 120a～120e is set mutatis mutandis label.
On the other hand, the present invention can also through be positioned at that transparent substrates 110a goes up or the light of transparent substrates 110a adjustment material 162 be used as disposing light-emitting diode 121 to bit patterns.Specifically, please refer to Fig. 9, in the present embodiment, have light adjustment material 162 on the transparent substrates 110a, and light-emitting diode 121 can be adjusted material 162 through light and carries out contraposition and be disposed on the transparent substrates 110a.That is to say that light adjustment material 162 is gone up corresponding setting with light-emitting diode 121 in transparent substrates 110a.Thus, the contraposition difficulty of light-emitting diode 121 can reduce fabrication errors in the time of can reducing processing procedure, to improve process rate.
In addition; Please refer to Figure 10; The light of encapsulating structure 100i adjustment material 160f also can for example be the uniform discontinuous blocky of a plurality of density distribution, and the adjustment of the light here material 160f also can be distributed in transparent substrates 110a the surface and in be embedded in the transparent substrates 110a.The adjustment of the light here material 160f also can be used as when light-emitting diode 120a～120e is set mutatis mutandis three-dimensional label.If when light is adjusted the 112 last times of load-bearing surface that material 160f is disposed at transparent substrates 110a; Produce a difference in height between light-emitting diode 120d and the light-emitting diode 120e; Can make that second control chip 134 can flatly be disposed at light-emitting diode 120d, 120e is last this moment through storehouse conductive component 170 on the engage side 124d of light-emitting diode 120d.Moreover; Please refer to Figure 11; The transparent substrates 110b of encapsulating structure 100j can for example be the multi-layer sheet structure also; Meaning is that transparent substrates 110b can be made up of 116,117,118 of veneer structures, and wherein light adjustment material 160f can be positioned at the surperficial or inner of veneer structure 116,117,118, and each veneer structure 116 (or veneer structure 117,118) all has light adjustment material 160f.That is to say that the design of the encapsulating structure 100j of present embodiment can be carried out different light conversions and (for example in veneer structure 116, carry out blue light and change ruddiness in different blocks or level; In veneer structure 117, carry out blue light and change gold-tinted; In veneer structure 118, carry out blue light and change green glow), promoting whole conversion efficiency, or adjust the colourity of different beam angles.
In brief; The user can be through the kenel of selected light adjustment material 160a～160f and the kenel of allocation position and transparent substrates 110a～110b; Adjust wavelength, light path or the light shape of the light that light-emitting diode 120a～120e sent, so that encapsulating structure 100d～100j has the preferable light effect that goes out.In addition, in the above-described embodiments, light adjustment material 160a～160f appears and is covered with in transparent substrates 110a, the last configuration mode of 110b, and the thickness of light adjustment material 160e～160f also can present the phenomenon of uneven thickness.When the light that is sent as light-emitting diode 120a～120e penetrates transparent substrates 110a, 110b; The light of part can directly penetrate transparent substrates 110a, 110b and present the coloured light that former light-emitting diode 120a～120e is sent; It for example is blue light; And the light of another part can exciting light adjustment material 160a～160f and produce and be different from the coloured light that former light-emitting diode 120a～120e is sent, for example be green glow.Thus; Encapsulating structure 100d～100j can adjust the luminous intensity that goes out that material 160e～160f changes light-emitting diode 120a～120e through light; Colourity; Colour temperature, and the mixed light effect of different light-emitting diode different tones that 120a～120e sends, and adjust the light effect that goes out of overall package structure 100d～100j through control chip 130.In other words, light adjustment material 160a～160f appears resentful to transparent substrates 110a, the last configuration mode of 110b, can effectively promote the whole light extraction efficiency of encapsulating structure 100d～100j.In addition, the foregoing description is merely and illustrates, and those skilled in the art is when can be with reference to the explanation of previous embodiment, selects aforementioned components according to actual demand for use or makes up, to reach required technique effect.
Figure 12 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 12 and Fig. 1; The encapsulating structure 100k of Figure 12 is similar with the encapsulating structure 100a of Fig. 1, and its difference is: the kenel of light-emitting diode 120a1～120e1 of the encapsulating structure 100k of Figure 12 is different with the kenel of light-emitting diode 120a～120e of Fig. 1.In detail; Light-emitting diode 120c1 with Figure 12 is an example, and the engage side 124c1 of light-emitting diode 120c1 has one first junction surface 124c2 and one second junction surface 124c3, and conductive component 170 can comprise the first conductive component 170a and the second conductive component 170b; And the first conductive component 170a is disposed at the first junction surface 124c2 of light-emitting diode 120c1; The second conductive component 170b is disposed at the second junction surface 124c3 of light-emitting diode 120c1, and wherein the first junction surface 124c2 and the second junction surface 124c3 have a difference in height h1, and the height of the first conductive component 170a is h2; The height of the second conductive component 170b is h3, then h1+h2=h3 preferably.
Because the first junction surface 124c2 and the second junction surface 124c3 of light-emitting diode 120c1 have difference in height h1; Therefore can adjust this difference in height h1 through the first conductive component 170a and the second conductive component 170b, can effectively promote yield with control chip 130 chip bondings with differing heights.The first conductive component 170a here or the second conductive component 170b can be constituted or formed by a plurality of conductive projection storehouses by a conductive projection, are decided by the difference in height between the first junction surface 124c2 and the second junction surface 124c3, do not limit at this.In like manner, light-emitting diode 120a1,120b1,120d1,120e1 all have identical kenel with light-emitting diode 120c1, please refer to above-mentioned explanation, repeat no more at this.In addition, conductive projection described herein is metal ball or the metal derby of on the first junction surface 124c2 and the second junction surface 124c3, stamping through wire bonder, and wherein metal for example is gold or aluminium.
Figure 13 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 13 and Fig. 1; The encapsulating structure 100l of Figure 13 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100l of Figure 13 also comprises a packing colloid 180; Wherein packing colloid 180 is disposed on the load-bearing surface 112 of transparent substrates 110a, and coats light-emitting diode 120a～120e at least, can avoid light-emitting diode 120a～120e to receive the influence of external substance.Particularly; In the present embodiment; Packing colloid 180 is filled between light-emitting diode 120a～120e and first control chip 132 and second control chip 134; That is to say that packing colloid 180 coats light-emitting diode 120a～120e and conductive component 170, and the load-bearing surface 112 of cover part transparent substrates 110a, first control chip 132 and the surface of second control chip, 134 adjacent light-emitting diode 120a～120e and the part surface of external module 140a.In addition, the packing colloid 180 here also has the effect of leaded light and heat radiation except the function with protection light-emitting diode 120a～120e.
Figure 14 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 14 and Fig. 1; The encapsulating structure 100m of Figure 14 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100m of Figure 14 also comprises a radiating subassembly 185; Wherein radiating subassembly 185 is disposed at control chip 130 relatively away from the sides of transparent substrates 110a, and what produced in the time of can effectively first control chip 132 being operated with second control chip 134 conducts to the external world, so that encapsulating structure 100m has preferable radiating effect.
Figure 15 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 15 and Fig. 1; The encapsulating structure 100n of Figure 15 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100n of Figure 15 also comprises a printing opacity glue-line 190; Wherein printing opacity glue-line 190 is disposed between the load-bearing surface 112 of bright dipping side 122a～122e and transparent substrates 110a of light-emitting diode 120a～120e and between the load-bearing surface 112 of external module 140a and transparent substrates 110a; Meaning is that light-emitting diode 120a～120e can be fixed on the transparent substrates 110a through printing opacity glue-line 190, and external module 140a can be fixed on the transparent substrates 110a through printing opacity glue-line 190.The printing opacity glue-line 190 here can effectively increase adhesion and the adhesion between external module 140a and the transparent substrates 110a between light-emitting diode 120a～120e and the transparent substrates 110a, promotes the reliability of encapsulating structure 100n.
Figure 16 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 16 and Fig. 1; The encapsulating structure 100o of Figure 16 is similar with the encapsulating structure 100a of Fig. 1; Its difference is: the encapsulating structure 100o of Figure 16 also comprises light path adjustment structure 195a, and wherein light path adjustment structure 195a is disposed on the bottom surface 114 with respect to load-bearing surface 112 of transparent substrates 110a.The adjustment of the light path here structure 195a for example is a plurality of lens, in order to influence the light that light-emitting diode 120a～120e is sent, adjusting light path, and can promote light extraction efficiency and the outgoing light homogeneity of encapsulating structure 100o.
Figure 17 is the generalized section of a kind of encapsulating structure of another embodiment of the present invention.Please be simultaneously with reference to Figure 17 and Figure 16; The encapsulating structure 100p of Figure 17 is similar with the encapsulating structure 100o of Figure 16; Its difference is: the light path adjustment structure 195b of the encapsulating structure 100p of Figure 17 is a plurality of surface micro-structures; And this light path adjustment structure 195b and transparent substrates 110c are formed in one, and wherein light path adjustment structure 195b carries out surface treatment to the bottom surface 114 of transparent substrates 110c to form.
In sum, the present invention has following effect at least:
1, owing to light-emitting diode of the present invention is to be disposed on the load-bearing surface of transparent substrates to transparent substrates with the bright dipping side; Therefore the light-emitting diode emitted light can penetrate transparent substrates and be passed to the external world from same plane, can effectively promote the outgoing light homogeneity of whole light-emitting diode.
2, encapsulating structure of the present invention is to adopt the mode of once covering crystalline substance to encapsulate light-emitting diode and control chip, can effectively reduce the encapsulation number of times, and processing procedure is comparatively simple, processing procedure efficient is good, and then can promote the production of encapsulating structure.
3, the control chip carried of the present invention is disposed on the light-emitting diode that entirely is arranged on the transparent substrates to cover crystal type, so the present invention is applicable to the encapsulation of undersized light-emitting diode, and helps volume production and reduce cost of manufacture.
4, because the flip chip structure that covers crystal type and existing chip that the present invention adopted is similar, therefore existing brilliant processing procedure and the process apparatus of covering can be used, the production of encapsulating structure and the yield of product can be improved.
5, because control chip is directly to encapsulate with light-emitting diode, the volume that therefore can effectively dwindle the overall package structure with reduce production costs.
6, encapsulating structure of the present invention is because of having external module, so control chip can increase the application of encapsulating structure through external module and external circuit electric connection.
7, encapsulating structure of the present invention also can comprise light adjustment material or light path adjustment structure, adjusts wavelength, light path or the light shape of the light that light-emitting diode sends, so that encapsulating structure has the preferable light effect that goes out.
8, encapsulating structure of the present invention also can comprise radiating subassembly, can be effectively that the thermal energy conduction that control chip produced is extremely extraneous, and make encapsulating structure have preferable radiating effect.
9, transparent substrates of the present invention can be selected the refractive index that is complementary with light-emitting diode, to increase the whole light extraction efficiency of encapsulating structure.
10, transparent substrates of the present invention and control chip help the heat radiation of light-emitting diode, can promote the radiating efficiency of overall package structure.
What should explain at last is: above embodiment is only in order to explaining technical scheme of the present invention, but not to its restriction; Although with reference to previous embodiment the present invention has been carried out detailed explanation, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these are revised or replacement, do not make the spirit and the scope of the essence disengaging various embodiments of the present invention technical scheme of relevant art scheme.
Claims (22)
1. encapsulating structure comprises:
One transparent substrates has a load-bearing surface;
A plurality of light-emitting diodes; Each light-emitting diode has relative a bright dipping side and an engage side; And each light-emitting diode with said bright dipping side to said transparent substrates and each light-emitting diode fits on the said load-bearing surface with said bright dipping side; Wherein each light-emitting diode has one first pin and one second pin, and said first pin and said second pin are positioned at said engage side; And
At least one control chip is disposed at the said engage side of said light-emitting diode, and said control chip and said light-emitting diode electrically connect.
2. encapsulating structure according to claim 1 also comprises at least one external module, is disposed on the said load-bearing surface or said control chip of said transparent substrates, and wherein said control chip electrically connects through a said external module and an external circuit.
3. encapsulating structure according to claim 2, wherein said external module electrically connects through chip bonding mode, routing juncture, welding manner or conducting resinl and said control chip.
4. encapsulating structure according to claim 2, wherein said external module comprise a lead frame, a metal derby or a printed circuit board (PCB).
5. encapsulating structure according to claim 2, wherein said external module are disposed on the said load-bearing surface of said transparent substrates, and said external module has identical height with said light-emitting diode.
6. encapsulating structure according to claim 1, wherein said at least one control chip comprise that one first control chip and one second control chip and said first control chip and said second control chip distinctly are connected to said first pin and said second pin of same light-emitting diode.
7. encapsulating structure according to claim 1; Also comprise at least one bridge assembly; Be disposed on the said load-bearing surface or said control chip of said transparent substrates; Said at least one control chip comprises one first control chip and one second control chip, and said bridge assembly electrically connects said first control chip and said second control chip.
8. encapsulating structure according to claim 7, wherein said bridge assembly electrically connects said first control chip and said second control chip through chip bonding mode, routing juncture, welding manner or conducting resinl.
9. encapsulating structure according to claim 1 also comprises light adjustment material, is disposed at the surperficial or inner of said transparent substrates.
10. encapsulating structure according to claim 9, wherein said light adjustment material comprises fluorescent material, scatterer or reflecting material.
11. being a continuous light adjustment material layer or an a plurality of light, encapsulating structure according to claim 9, wherein said light adjustment material adjust the material pattern.
12. encapsulating structure according to claim 11, the corresponding setting of wherein said light adjustment material pattern with said light-emitting diode.
13. encapsulating structure according to claim 9, wherein said transparent substrates are the multi-layer sheet structure, and said light adjustment material is positioned at the surperficial or inner of each veneer structure.
14. encapsulating structure according to claim 1 also comprises a plurality of conductive components, be disposed between the engage side and said control chip of each light-emitting diode, and said control chip is electrically connected to pairing light-emitting diode through said conductive component.
15. encapsulating structure according to claim 14; Wherein the said engage side of each light-emitting diode has one first junction surface and one second junction surface, and said conductive component comprises a plurality of first conductive components and a plurality of second conductive component, and said first conductive component is disposed at said first junction surface of each light-emitting diode respectively; Said second conductive component is disposed at said second junction surface of each light-emitting diode respectively; Said first junction surface and said second junction surface have a difference in height, and said difference in height is h1, and the height of each first conductive component is h2; The height of each second conductive component is h3, and h1+h2=h3.
16. encapsulating structure according to claim 15, each first conductive component or each second conductive component system are made up of a conductive projection or are formed by a plurality of conductive projection storehouses.
17. encapsulating structure according to claim 1 also comprises a packing colloid, is disposed on the said load-bearing surface of said transparent substrates, and coats said light-emitting diode at least.
18. encapsulating structure according to claim 1 also comprises a radiating subassembly, is disposed at said control chip relatively away from a side of said transparent substrates.
19. encapsulating structure according to claim 1 also comprises a printing opacity glue-line, is disposed between the said load-bearing surface of said bright dipping side and said transparent substrates of each light-emitting diode.
20. encapsulating structure according to claim 1 also comprises light path adjustment structure, is disposed on the bottom surface with respect to said load-bearing surface of said transparent substrates.
21. encapsulating structure according to claim 20, wherein said light path adjustment structure comprises a plurality of lens or a plurality of surface micro-structure.
22. encapsulating structure according to claim 20, wherein said light path adjustment structure and said transparent substrates are formed in one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102465144A CN102082142B (en) | 2009-11-30 | 2009-11-30 | Packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102465144A CN102082142B (en) | 2009-11-30 | 2009-11-30 | Packaging structure |
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| CN102082142A CN102082142A (en) | 2011-06-01 |
| CN102082142B true CN102082142B (en) | 2012-12-05 |
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| CN103487838B (en) * | 2012-06-11 | 2016-11-02 | 原相科技股份有限公司 | The encapsulating structure of Optical devices |
| JP6097253B2 (en) * | 2014-07-02 | 2017-03-15 | 住友電気工業株式会社 | Three color light source |
| CN104485407B (en) * | 2014-10-23 | 2017-05-24 | 贵州省兴豪华电子科技有限公司 | LED lamp with control chip |
| US11244937B2 (en) | 2018-10-09 | 2022-02-08 | Industrial Technology Research Institute | Spliced display with LED modules disposed on transparent substrate |
| CN111028697A (en) * | 2018-10-09 | 2020-04-17 | 财团法人工业技术研究院 | Tiled display device |
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