CN102082088B - Method for sharing SL mask plate in products of DCMP (direct chemically mechanical polishing) process - Google Patents
Method for sharing SL mask plate in products of DCMP (direct chemically mechanical polishing) process Download PDFInfo
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- CN102082088B CN102082088B CN2009102018776A CN200910201877A CN102082088B CN 102082088 B CN102082088 B CN 102082088B CN 2009102018776 A CN2009102018776 A CN 2009102018776A CN 200910201877 A CN200910201877 A CN 200910201877A CN 102082088 B CN102082088 B CN 102082088B
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- mask plate
- photoetching
- alignment mark
- scribe line
- dcmp
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Abstract
The invention discloses a method for sharing an SL mask plate in products of a DCMP (direct chemically mechanical polishing) process, wherein the SL mask plate is a mask plate which is used for opening a photoetching alignment mark area and performing additional etching after STI (shallow trough isolation) is formed so that the step height of the finally formed photoetching alignment mark meets the needs of subsequent photoetching alignment process. The method comprises the following steps: designing a universal SL mask plate which comprises the opened pattern of each photoetching alignment mark, the opened pattern of each set of etching marks and a dark area for preventing a photoetching machine baffle from light leakage among the patterns; and setting different mask plate baffles, mask plate offset and parameters of silicon wafer offset at the time of photoetching so that the SL mask plate is used in different products of the DCMP process. By adopting the method disclosed by the invention, the SL mask plate can be shared in different products of the DCMP process to achieve the aim of reducing the production cost of the products.
Description
Technical field
The present invention relates to the semiconductor integrated circuit field, particularly relate to a kind of in the product of direct chemical mechanical polishing process the method for shared SL (scribe line mask plate) mask plate.
Background technology
For the device that adopts STI (shallow trench isolation leaves) to isolate below the 0.18 μ m, its CMP (chemical-mechanical planarization) process generally has two kinds, and a kind of is common CMP, and a kind of is DCMP (direct chemical mechanical polishing).
Common CMP comprises two photoetching levels: the STI photoetching, etching is filled S
iO
2, reverse STI photoetching, the S on the etching source region
iO
2, CMP forms STI.
DCMP has only a photoetching level: the STI photoetching, etching is filled S
iO
2, CMP forms STI.
In DCMP technology; When STI formed, all structure partials rose and fell and reach minimum, to keep the homogeneity of various structures; But photoetching alignment mark also has been flattened simultaneously; Therefore in follow-up film forming procedure, the photoetching alignment mark step degree of depth is not enough, finally causes follow-up photoetching level can't aim at and alignment.It is regional and add etching just to need this moment to use the extra photoetching process of one deck to open photoetching alignment mark, makes the photoetching alignment mark shoulder height of final formation can satisfy the demand of follow-up photoetching Alignment Process, shown in Fig. 3-5.The employed mask plate of this layer photoetching promptly is called the SL mask plate.
Fig. 1-2 does not adopt the SL mask plate to carry out the schematic flow sheet of photoetching, etching in DCMP technology.Form the deposition (referring to Fig. 2) that polysilicon is directly carried out in back (referring to Fig. 1) at STI.
Fig. 3-the 5th adopts the SL mask plate to carry out the schematic flow sheet of photoetching, etching in DCMP technology.Form back (referring to Fig. 3) at STI, adopt the SL mask plate to carry out photoetching and S
iO
2Etching (referring to Fig. 4), and then carry out the deposition (referring to Fig. 5) of polysilicon.
DCMP process using SL mask plate traditional carries out in the method for photoetching, etching; Because the design of the mask plate of each product is different; The position of each photoetching alignment mark on mask plate is also all different, so the product of each DCMP technology all needs a SL mask plate separately.
Summary of the invention
The technical problem that the present invention will solve provide a kind of in the product of direct chemical mechanical polishing process the method for shared SL mask plate, make a shared SL mask plate between all products that adopt DCMP, save production cost.
For solving the problems of the technologies described above; Of the present invention in the product of direct chemical mechanical polishing process the method for shared SL mask plate be to adopt following technical scheme to realize: design a general SL mask plate; It comprises the figure of opening of each photoetching alignment mark, each overlay mark open the dark space that is used to prevent mask aligner baffle plate light leak between figure and said each figure; Through setting different mask plate baffle plates, the parameter of mask plate side-play amount and silicon chip side-play amount makes said SL mask plate be used for the product of different DCMP technology when photoetching.
Adopt method of the present invention, can be in the product of different DCMP technology a shared SL mask plate, can effectively reduce the production cost.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Fig. 1-2 does not adopt the SL mask plate to carry out the schematic flow sheet of photoetching, etching in the DCMP technology;
Fig. 3-the 5th adopts the SL mask plate to carry out the schematic flow sheet of photoetching, etching in the DCMP technology;
Fig. 6 is a kind of general SL mask plate one embodiment sketch map.
Embodiment
Describedly in the product of direct chemical mechanical polishing process, during the method practical implementation of shared SL mask plate, need special general SL mask plate of design.Fig. 6 is said general SL mask plate one embodiment sketch map; Comprising the figure of opening of each photoetching alignment mark, each overlay mark open the dark space that is used to prevent mask aligner baffle plate light leak between figure and said each figure.Through setting different mask plate baffle plates, the parameter of mask plate side-play amount and silicon chip side-play amount makes that the SL mask plate of this piece particular design can be shared in the product of different DCMP technology, carries out photoetching to open the photo-etching mark zone when photoetching.
In the product of different DCMP technology, use described general SL mask plate to carry out photoetching and can adopt following diverse ways:
1, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, the parameter of mask plate side-play amount and silicon chip side-play amount.
2, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, and the parameter of silicon chip side-play amount.
3, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, and the parameter of mask plate side-play amount.
4, opening follow-up photoetching level at least aims at and the required photo-etching mark of alignment.
More than through embodiment the present invention has been carried out detailed explanation, but these are not to be construed as limiting the invention.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be regarded as protection scope of the present invention.
Claims (5)
1. the method for a shared scribe line mask plate in the product of direct chemical mechanical polishing process; Said scribe line mask plate; Be meant after STI forms; Employed mask plate when being used to open the photoetching alignment mark zone and adding etching makes the photoetching alignment mark shoulder height of final formation satisfy follow-up photoetching Alignment Process demand; It is characterized in that: design a general scribe line mask plate, it comprises the dark space that is used to prevent mask aligner baffle plate light leak between figure and said each figure of opening of opening figure, each overlay mark of each photoetching alignment mark; Through setting different mask plate baffle plates, the parameter of mask plate side-play amount and silicon chip side-play amount makes said scribe line mask plate be used for the product of different DCMP technology when photoetching.
2. the method for claim 1, it is characterized in that: when using said general scribe line mask plate to carry out photoetching, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, the parameter of mask plate side-play amount and silicon chip side-play amount.
3. the method for claim 1, it is characterized in that: when using said general scribe line mask plate to carry out photoetching, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, and the parameter of silicon chip side-play amount.
4. the method for claim 1, it is characterized in that: when using said general scribe line mask plate to carry out photoetching, Different products is set different mask plate baffle plates according to the coordinate of its photoetching alignment mark, and the parameter of mask plate side-play amount.
5. the method for claim 1 is characterized in that: when using said general scribe line mask plate to carry out photoetching, open follow-up photoetching level at least and aim at and the required photoetching alignment mark of alignment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102018776A CN102082088B (en) | 2009-11-30 | 2009-11-30 | Method for sharing SL mask plate in products of DCMP (direct chemically mechanical polishing) process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102018776A CN102082088B (en) | 2009-11-30 | 2009-11-30 | Method for sharing SL mask plate in products of DCMP (direct chemically mechanical polishing) process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102082088A CN102082088A (en) | 2011-06-01 |
| CN102082088B true CN102082088B (en) | 2012-04-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102018776A Active CN102082088B (en) | 2009-11-30 | 2009-11-30 | Method for sharing SL mask plate in products of DCMP (direct chemically mechanical polishing) process |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194387B1 (en) * | 1997-12-01 | 2001-02-27 | Abbott Laboratories | 6-O-aklyl erythromycin B oxime |
| US6232200B1 (en) * | 1998-10-22 | 2001-05-15 | United Microelectronics Corp. | Method of reconstructing alignment mark during STI process |
| CN1314706A (en) * | 2000-03-21 | 2001-09-26 | 日本电气株式会社 | Method for forming element isolation zone |
-
2009
- 2009-11-30 CN CN2009102018776A patent/CN102082088B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6194387B1 (en) * | 1997-12-01 | 2001-02-27 | Abbott Laboratories | 6-O-aklyl erythromycin B oxime |
| US6232200B1 (en) * | 1998-10-22 | 2001-05-15 | United Microelectronics Corp. | Method of reconstructing alignment mark during STI process |
| CN1314706A (en) * | 2000-03-21 | 2001-09-26 | 日本电气株式会社 | Method for forming element isolation zone |
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|---|---|
| CN102082088A (en) | 2011-06-01 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131216 |
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Effective date of registration: 20131216 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |