CN105097641B - The manufacture method of embedded type word line and its isolation structure - Google Patents
The manufacture method of embedded type word line and its isolation structure Download PDFInfo
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- CN105097641B CN105097641B CN201410196593.3A CN201410196593A CN105097641B CN 105097641 B CN105097641 B CN 105097641B CN 201410196593 A CN201410196593 A CN 201410196593A CN 105097641 B CN105097641 B CN 105097641B
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Abstract
A kind of manufacture method of embedded type word line and its isolation structure, including elder generation form multiple embedded type word lines in substrate, and the top of embedded type word line is less than substrate surface.Afterwards, mask arrangement layer is formed in the groove on embedded type word line respectively, and by removing part-structure, makes mask arrangement layer protrusion, in order to the side wall formation distance piece of mask arrangement layer, and then multiple grooves being voluntarily aligned are formed.Then, with distance piece and mask arrangement layer for etching mask, etching removes the substrate under trench bottom, to form multiple isolation structure grooves, then forms isolation structure in isolation structure groove.The manufacture method of the present invention can effectively reduce the interference (Row Hammer) between wordline, and keep the area of the contact area in active area.
Description
Technical field
The present invention relates to the manufacture method of a kind of embedded type word line and its isolation structure, and more particularly to, one kind is voluntarily aligned
The manufacture method of the isolation structure of embedded type word line.
Background technology
To lift the integration of dynamic random access memory to accelerate the service speed of element, and meet consumer couple
In the demand of miniaturized electronic device, embedded type word line dynamic random access memory (buried word are developed in recent years
Line DRAM), to meet above-mentioned a variety of demands.
But increase with the integration of memory, the isolation structure of wordline spacing and memory array all can constantly contract
It is small, cause a variety of harmful effects.Interference between leakage (Cell-to-cell leakage) for example between memory, wordline
(also known as Row Hammer), access time failure (tWR failure), holding failure (retention failure), bit line coupling
Close failure (Bit Line coupling failure) etc..
Therefore, currently for the interference between wordline, have using the ratio for doing the depth of the isolation structure of embedded type word line
The deep method of wordline.Such method needs the photoetching process of at least twice, is first to produce deep isolation structure together,
Another road is to produce the embedded type word line between isolation structure.
Preferable state is as shown in figure 1, wherein display base plate 100 has the isolation structure for marking off active area 104 to come
102, and have between isolation structure 102 embedded type word line 106.Each active area 104 is embedded in formula wordline 106 and is divided into centre
The contact area 110 and 112 on region 108 and both sides.In general, the area A1 of contact area 110 is substantially equal to contact area
112 area A2.
However, because element small-sized in itself, most probably because minor shifts in photoetching process, and cause Fig. 2
Result.In fig. 2, the skew because embedded type word line 106 is slightly turned right, the area A2 of contact area 112 substantially diminishes, because
And cause resistance increase herein, and influence the efficiency of element in itself.
The content of the invention
The present invention provides the manufacture method of a kind of embedded type word line and its isolation structure, can produce the isolation being voluntarily aligned
Structure, is provided with the area coinciding for ensuring contact area in active area.
Formed on the embedded type word line of the present invention and its manufacture method of isolation structure, the surface for being included in a substrate by one
The sandwich construction that first nitration case, oxide layer are constituted with one second nitration case.Then, the sandwich construction is patterned, with shape
Into the first groove of exposure substrate surface.Using sandwich construction as etching mask, etching removes the substrate exposed, to form embedment
Formula wordline groove.Form embedded type word line respectively in embedded type word line groove, and the top of embedded type word line is less than substrate
The surface.Then, mask arrangement layer is formed in the first groove on embedded type word line respectively.Remove respectively in sandwich construction
Second nitration case and oxide layer, so that mask arrangement layer protrudes from the first nitration case.At the side wall formation interval of mask arrangement layer
Part, to form multiple second grooves being voluntarily aligned.With above-mentioned distance piece and mask arrangement layer for etching mask, etching removes the
Substrate under two trench bottoms, to form multiple isolation structure grooves, isolation structure is formed in isolation structure groove.
In one embodiment of this invention, the first above-mentioned nitration case and the second nitration case include silicon nitride layer or nitrogen oxidation
Silicon layer.
In one embodiment of this invention, also one can be formed on the surface of substrate before above-mentioned sandwich construction is formed to aoxidize
Silicon layer.In addition, can also form active area isolation structure in substrate, and active area isolation structure and above-mentioned isolation structure are by substrate
It is distinguished into multiple active areas.
In one embodiment of this invention, the step of patterning above-mentioned sandwich construction, which is included on sandwich construction, forms mask
Layer, and patterned mask layer, with expose portion sandwich construction, then remove the sandwich construction exposed, to form above-mentioned first ditch
Groove, then removes mask layer.
In one embodiment of this invention, the step of above-mentioned patterning above-mentioned sandwich construction is included on sandwich construction and formed
Polysilicon layer, and patterned polysilicon layer, it is then conformal on polysilicon list structure to form multiple polysilicon list structures
Ground covers a sacrifice layer, to form multiple 3rd grooves, and inserts in the 3rd groove polycrystalline silicon material, then by the sacrifice exposed
Layer is removed.Afterwards, using polysilicon list structure and polycrystalline silicon material as etching mask, etching removes the sandwich construction exposed,
Polysilicon list structure, polycrystalline silicon material and remaining sacrifice layer are removed together again.
In one embodiment of this invention, the step of forming more above-mentioned embedded type word line is included in embedded type word line groove table
Face forms grid oxic horizon, and deposited conductor layer, then conductor layer described in etch-back.
In one embodiment of this invention, the top of above-mentioned embedded type word line than aforesaid substrate the about low 20nm in surface~
80nm。
In one embodiment of this invention, have first between above-mentioned each bar mask arrangement layer and the mask arrangement layer of side
Spacing and opposite side mask arrangement layer between have the second spacing, and first and second spacing ratio about 1:2 to 1:5
Between.
In one embodiment of this invention, the step of forming above-mentioned distance piece, which is included on mask arrangement layer, conformally to be covered
One the 3rd nitration case, and carry out etch-back.
In one embodiment of this invention, the on aforesaid substrate surface is also can remove after above-mentioned isolation structure is formed
One nitration case.
In one embodiment of this invention, the step of forming above-mentioned isolation structure enters including the surface to isolation structure groove
Row oxidation, silicon nitride is inserted then at wherein interior.
Based on above-mentioned, the groove of the invention using above the embedded type word line being initially formed, the mask knot of protrusion is made in addition
Structure layer, then the distance piece by mask arrangement layer formation, and be voluntarily directed at the isolation structure to form embedded type word line.Therefore,
The present invention can effectively reduce the interference (Row Hammer) between wordline, and keep the area of the contact area in active area.
For the features described above and advantage of the present invention can be become apparent, special embodiment below, and coordinate appended accompanying drawing
It is described in detail below.
Brief description of the drawings
Fig. 1 is a kind of schematic layout pattern of known dynamic random access memory for having embedded type word line.
Fig. 2 be Fig. 1 embedded type word line shift after dynamic random access memory schematic layout pattern.
Fig. 3 A to Fig. 3 J are the manufacture stream of a kind of embedded type word line according to one embodiment of the invention and its isolation structure
Journey profile.
Wherein, description of reference numerals is as follows：
100、300：Substrate
102、332：Isolation structure
104：Active area
106、320：Embedded type word line
108：Intermediate region
110、112：Contact area
300a：Surface
301：Silicon oxide layer
302、306：Nitration case
304：Oxide layer
308：Sandwich construction
310：Polysilicon list structure
312：Sacrifice layer
314：Polycrystalline silicon material
316、328：Groove
318：Embedded type word line groove
320a：Top
322：Grid oxic horizon
324：Mask arrangement layer
326：Distance piece
330：Isolation structure groove
334：Lining
336：Silicon nitride
A1、A2：Area
d1、d2：Spacing
t：Thickness
Embodiment
Accompanying drawing is refer to herein, the present invention is shown in idea of the invention, annexed drawings more fully to know from experience
Embodiment.But, the present invention can also be put into practice using many multi-forms, and should not be construed as limited to it is beneath described in
Embodiment.In fact, it is only to make the present invention more will be detailed and complete to provide embodiment, and fully convey the scope of the invention to
Those of ordinary skill in the art.
In the accompanying drawings, for clarity the size and relative size in each layer and region may be made to the description exaggerated.
Fig. 3 A to Fig. 3 J are the manufacture stream of a kind of embedded type word line according to one embodiment of the invention and its isolation structure
Journey profile.
Fig. 3 A are refer to, are formed on the surface 300a of a substrate 300 by one first nitration case 302, oxide layer 304 and one
The sandwich construction 308 that second nitration case 306 is constituted.Above-mentioned first, second nitration case 302 and 306 such as silicon nitride layer or nitrogen
Silicon oxide layer.The thickness t of above-mentioned oxide layer 304 is for example between 20nm~200nm.In addition, before sandwich construction 308 is formed
Can also first substrate 300 surface 300a formation one silica layer 301, not only can protective substrate 300 can also strengthen substrate 300 with
Adhesive force between first nitration case 302.Further, since Fig. 3 A are profiles, so not shown the opposing party in substrate 300
There is active area isolation structure upwards, this active area isolation structure can be distinguished substrate 300 with the isolation structure that is subsequently formed
Into multiple active areas.Then, for patterned multilayer structure 308, mask layer (not shown) can be formed on sandwich construction 308,
And direct patterned mask layer, with expose portion sandwich construction 308, then the sandwich construction 308 exposed is removed, to form ditch
Groove, then removes mask layer.But, when component size (such as line-spacing) reduces to a certain extent, it may be necessary to improve above-mentioned pattern
The technique for changing sandwich construction 308, for example uses following technique in the present embodiment.
Please referring again to Fig. 3 A, polysilicon layer (not shown) is formed on sandwich construction 308, and pattern foregoing polysilicon
Layer, to form multiple polysilicon list structures 310.
Then, Fig. 3 B are refer to, a sacrifice layer 312 are conformally covered on polysilicon list structure 310, for example silica
Layer.Then, polycrystalline silicon material 314 is inserted in the groove that sacrifice layer 312 is constituted, and can be by etch-back, chemically grind
Or mechanicalness grinding, partial polysilicon material 314 is removed, and expose sacrifice layer 312.
Then, Fig. 3 C are refer to, the sacrifice layer 312 exposed is removed.Due to polysilicon in itself with oxide layer and nitridation
There is high etching selectivity between layer, thus can using polysilicon list structure 310 and polycrystalline silicon material 314 as etching mask,
Etching removes the sandwich construction 308 exposed, reaches the result of patterned multilayer structure 308, and thereby base is exposed in technique formation
The first groove 316 of plate 300.
Then, Fig. 3 D are refer to, by polysilicon list structure 310, polycrystalline silicon material 314 and remaining sacrifice layer 312 1
Rise and remove, and be etching mask with sandwich construction 308, etching removes the substrate 300 and silicon oxide layer 301 exposed, to be formed
Embedded type word line groove 318.In other words, the pattern of first groove 316 thereby figure process transfer turn into embedded type word line ditch
Groove 318.
Afterwards, Fig. 3 E are refer to, embedded type word line 320, and embedded type word line are formed in embedded type word line groove 318
320 top 320a is less than the surface 300a of substrate 300.For example, grid first can be formed on the surface of embedded type word line groove 318
Pole oxide layer 322, and deposited conductor layer (not shown), then etch-back this conductor layer, you can obtain embedded type word line 320.At this
In embodiment, surface 300a about low 20nm~80nms of the top 320a than substrate 300 of embedded type word line 320, but the present invention is simultaneously
Not limited to this.Then mask arrangement layer 324, such as silicon nitride layer, nitrogen are formed in first groove 316, on embedded type word line 320
Change titanium layer or the structure sheaf being made up of titanium nitride layer and tungsten.
Then, Fig. 3 F are refer to, the second nitration case 306 and oxide layer 304 in sandwich construction 308 are removed respectively, so that
Mask arrangement layer 324 protrudes from the first nitration case 302.Due to mask arrangement layer 324 position substantially with embedded type word line 320
Layout it is identical, can be equidistant between each mask arrangement layer 324 so designed according to different elements；Or as shown in this figure,
There is the first spacing d1, the mask arrangement with opposite side between each mask arrangement layer 324 and the mask arrangement layer 324 of its side
There is the second spacing d2, and first and second spacing d1 between layer 324:D2 ratio is for example 1:2 to 1:Between 5.Due to burying
The layout for entering formula wordline 320 be usually two relatively not in same active area, so what is showed is two-by-two one
To distribution.
Afterwards, Fig. 3 G are refer to, in the side wall formation distance piece 326 of mask arrangement layer 324, multiple are voluntarily aligned with being formed
Second groove 328.The forming method of the distance piece 326 for example conformally covers one the 3rd nitrogen on mask arrangement layer 324
Change layer (not shown), and carry out etch-back.Moreover, if still having the first nitration case 302 on substrate 300, can move in the lump at this moment
Except the first nitration case 302 in second groove 328.If in addition, mask arrangement layer 324 between equidistant or spacing it is larger,
Then distance piece 326 can be formed in the side wall of each mask arrangement layer 324；If on the contrary, between mask arrangement layer 324
Away from smaller, it is possible to as shown in this figure, second groove 328 will not be formed between the less mask arrangement layer 324 of spacing two-by-two.
Then, Fig. 3 H are refer to, because silicon has high etching selectivity between the material such as silicon nitride, titanium nitride in itself,
So can be by distance piece 326 and mask arrangement layer 324 as etching mask, etching removes the substrate under second groove 328
300, to form multiple isolation structure grooves 330.Because isolation structure groove 330 is formed in the way of being voluntarily aligned,
As the area A1 of the contact area of the both sides of embedded type word line 320 of the position in same active area is substantially with A2.This
Outside, after isolation structure groove 330 is formed, it may be selected to carry out boron ion implantation step to substrate 300, to prevent between wordline
Interference (Row Hammer).
Then, Fig. 3 I are refer to, in formation isolation structure 332 in isolation structure groove 330.In detail in this figure, isolation is formed
The step of structure 332, aoxidizes including the surface to isolation structure groove 330, and forms the oxide layer of similar lining 334, so
Silicon nitride 336 is inserted in isolation structure groove 330 afterwards.And it is described oxidation (oxidation) such as thermal oxidation method or from
Daughter oxidizing process.
Then, Fig. 3 J are refer to, first on the surface 300a of substrate 300 can be nitrogenized after isolation structure 332 is formed
Layer 302 is removed, until exposing silicon oxide layer 301 or substrate 300.
More than embodiment be complete the present invention one way in which, do not represent the present invention step must completely with
Above-described embodiment is identical, for example forms the mode of isolation structure 332 and has following several, but the present invention is not limited thereto.
(1) is directly aoxidized to the surface of isolation structure groove 330.
(2) is aoxidized using plasma oxidation method to the surface of isolation structure groove 330, then in isolation structure
Spin-on glasses (SOG) are inserted in groove 330, then carry out cmp (CMP).
(3) is aoxidized to the surface of isolation structure groove 330, and titanium nitride layer is formed in isolation structure groove 330
Or the structure sheaf being made up of titanium nitride layer and tungsten.
In summary, the present invention is by being voluntarily directed at formed isolation structure, the interference effectively between reduction wordline
(Row Hammer), and keep the area of the contact area in active area.
Although the present invention is disclosed as above with embodiment, so it is not limited to the present invention, ordinary skill people
Member, without departing from the spirit and scope of the present invention, when can make a little change and retouching, therefore protection scope of the present invention is when regarding
As defined in claim is defined.
Claims (11)
1. the manufacture method of a kind of embedded type word line and its isolation structure, it is characterised in that methods described includes：
The sandwich construction being made up of one first nitration case, oxide layer with one second nitration case is formed on the surface of a substrate；
The sandwich construction is patterned, to form multiple first grooves on the surface for exposing the substrate；
Using the sandwich construction as etching mask, etching removes the substrate exposed, to form multiple embedded type word line grooves；
Form embedded type word line respectively in the multiple embedded type word line groove, and the top of the embedded type word line is less than the base
The surface of plate；
Mask arrangement layer is formed in the multiple first groove on the embedded type word line respectively；
Remove second nitration case in the sandwich construction and the oxide layer respectively so that mask arrangement layer protrude from this
One nitration case；
In the side wall formation distance piece of mask arrangement layer, to form the second groove being voluntarily aligned；
With the distance piece and mask arrangement layer for etching mask, etching removes the substrate under the second groove, with
Form isolation structure groove；And
Isolation structure is formed in the isolation structure groove.
2. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：First nitration case
Include silicon nitride layer or silicon oxynitride layer with second nitration case.
3. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Forming the multilayer
Also include before structure：
One silica layer is formed on the surface of the substrate；And
Active area isolation structure is formed in the substrate, the active area isolation structure distinguishes the substrate with the isolation structure
Into multiple active areas.
4. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Pattern the multilayer
The step of structure, includes：
Mask layer is formed on the sandwich construction；
The mask layer is patterned, with the expose portion sandwich construction；
The sandwich construction exposed is removed, to form the multiple first groove；And
Remove the mask layer.
5. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Pattern the multilayer
The step of structure, includes：
Polysilicon layer is formed on the sandwich construction；
The polysilicon layer is patterned, to form multiple polysilicon list structures；
A sacrifice layer is conformally covered on the multiple polysilicon list structure, to form multiple 3rd grooves；
In inserting polycrystalline silicon material in the multiple 3rd groove；
Remove the sacrifice layer exposed；
Using the multiple polysilicon list structure and the polycrystalline silicon material as etching mask, etching removes the multilayer exposed
Structure；And
Remove the multiple polysilicon list structure, the polycrystalline silicon material and the remaining sacrifice layer.
6. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Form the embedment
The step of formula wordline, includes：
In the multiple embedded type word line flute surfaces formation grid oxic horizon；
The deposited conductor layer in the multiple embedded type word line groove；And
Conductor layer described in etch-back.
7. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：The embedded type word line
The surface low 20nm~80nm of the top than the substrate.
8. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：The each mask arrangement
Have between the mask arrangement layer between layer and the mask arrangement of side layer with the first spacing and opposite side between second
Away from, and first spacing and second spacing ratio 1:2 to 1:Between 5.
9. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Form the interval
The step of part, includes：
One the 3rd nitration case is conformally covered on mask arrangement layer；And
The nitration case of etch-back the 3rd.
10. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：It is described being formed
Also include removing first nitration case on the surface of the substrate after isolation structure.
11. the manufacture method of embedded type word line according to claim 1 and its isolation structure, it is characterised in that：Formed it is described every
The step of from structure, includes：
The surface of the isolation structure groove is aoxidized；And
Silicon nitride is inserted in the isolation structure groove.
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| CN109037217B (en) * | 2017-06-09 | 2021-05-18 | 华邦电子股份有限公司 | Memory device |
| KR20210040708A (en) | 2019-10-04 | 2021-04-14 | 삼성전자주식회사 | Integrated Circuit devices and manufacturing methods for the same |
| CN113078100B (en) * | 2021-03-19 | 2021-12-17 | 长江存储科技有限责任公司 | Self-aligned imaging method |
| CN115915750A (en) * | 2021-08-16 | 2023-04-04 | 长鑫存储技术有限公司 | Semiconductor device, electronic apparatus and manufacturing method |
| CN116456714A (en) | 2022-01-06 | 2023-07-18 | 长鑫存储技术有限公司 | Semiconductor structure and manufacturing method thereof |
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| TW201308549A (en) * | 2011-08-01 | 2013-02-16 | Winbond Electronics Corp | Semiconductor device and method for fabricating the same |
| TW201421613A (en) * | 2012-11-29 | 2014-06-01 | Winbond Electronics Corp | Methods for forming semiconductor device |
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| CN1230026A (en) * | 1998-03-25 | 1999-09-29 | 西门子公司 | Semiconductor device with vertical transistor and buried word line |
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