CN102075169A - High speed comparator - Google Patents
High speed comparator Download PDFInfo
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- CN102075169A CN102075169A CN2011100506931A CN201110050693A CN102075169A CN 102075169 A CN102075169 A CN 102075169A CN 2011100506931 A CN2011100506931 A CN 2011100506931A CN 201110050693 A CN201110050693 A CN 201110050693A CN 102075169 A CN102075169 A CN 102075169A
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Abstract
The invention discloses a high speed comparator, which comprises a first switch element, a second switch element, a third switch element, a first resistor, a second resistor, a third resistor, a fourth resistor and a fifth resistor, wherein the first resistor is connected with the first switch element; the second resistor is connected with the second switch element; the third resistor is connected between the first switch element and the third switch element; the fourth resistor is connected between the second switch element and the third switch element; and the fifth resistor is connected with the first resistor and the second resistor. The high speed comparator has a simple structure, and the gain of the high speed comparator does not change along with a process change.
Description
Technical field
The present invention relates to a kind of comparator, refer to the high-speed comparator that a kind of gain does not change with technology especially.
Background technology
Along with the development of modern communications technology and signal processing technology, increasing analog signal need change into digital signal and handle, and therefore the analog to digital converter of high-speed, high precision is had higher requirement.But in ultra high-speed adc, the design of high-speed, high precision comparator is the difficult point and the bottleneck of whole design.
The structure of existing high-speed comparator comprises: multistage open loop comparator, latched comparator, dynamic latch comparator and amplify latched comparator in advance.In existing high-speed comparator circuit, its gain tends to change along with the variation of technology, and owing to be subjected to the restriction of amplifier bandwidth, the speed of high-speed comparator is difficult to reach Gsps(megabit of per second).
Summary of the invention
In view of above content, be necessary the high-speed comparator that provides a kind of gain not change with technology.
A kind of high-speed comparator, comprise one first switch element, a second switch element, one the 3rd switch element, first resistance that links to each other with described first switch element, second resistance that links to each other with described second switch element, one the 3rd resistance, one the 4th resistance and one the 5th resistance, described the 3rd resistance is connected between described first switch element and described the 3rd switch element, described the 4th resistance is connected between described second switch element and described the 3rd switch element, and described the 5th resistance links to each other with described first resistance and described second resistance.
Relative prior art, high-speed comparator of the present invention is simple in structure, and gain does not change with technique change, and is only relevant with the resistors match degree at leakage two ends, field effect transistor source, its bandwidth can be accomplished the GHz level by comparator output resistance and the decision of next stage load capacitance simultaneously.
Description of drawings
Fig. 1 is the system architecture diagram of high-speed comparator better embodiment of the present invention.
Fig. 2 is the circuit diagram of high-speed comparator better embodiment of the present invention.
Fig. 3 is the circuit diagram of another execution mode of high-speed comparator of the present invention.
Embodiment
Please consult Fig. 1 and Fig. 2 simultaneously, high-speed comparator better embodiment of the present invention comprises a first input end Vin+, one second input Vin-, one first output end vo ut+, one second output end vo ut-, one first switch element, a second switch element, one the 3rd switch element, one first resistance R 1, one second resistance R 2, one the 3rd resistance R 3, one the 4th resistance R 4 and one the 5th resistance R 5.This first input end Vin+ and this second input Vin-are used to receive a pair of differential signal of input, and this first output end vo ut+ and this second output end vo ut-are used to receive a pair of differential signal of output.
In the present embodiment, this first switch element is one first field effect transistor M1A, and this second switch element is one second field effect transistor M1B, and the 3rd switch element is one the 3rd field effect transistor M3.This first field effect transistor M1A, this second field effect transistor M1B and the 3rd field effect transistor M3 are N type field effect transistor (NMOS).In other embodiments, switch element can change to switch element or the circuit that can realize said function as required.
The annexation of this high-speed comparator better embodiment is: the grid of this first field effect transistor M1A connects this first input end Vin+, its drain electrode connects an end of this first output end vo ut+ and this first resistance R 1, and its source class connects an end of the 3rd resistance R 3.The grid of this second field effect transistor M1B connects this second input Vin-, and its drain electrode connects an end of this second output end vo ut-and this second resistance R 2, and its source class connects an end of the 4th resistance R 4.The other end of this first resistance R 1 and the other end of this second resistance R 2 are connected an end of the 5th resistance R 5 jointly, and the other end of the 5th resistance R 5 connects a power end VDD.The other end of the 3rd resistance R 3 and the other end of the 4th resistance R 4 are connected the drain electrode of the 3rd field effect transistor M3 jointly, and the grid of the 3rd field effect transistor M3 connects a voltage end Vb, and its source class connects an earth terminal VSS.
See also Fig. 3, another execution mode of high-speed comparator of the present invention comprises first input end Vin+, the second input Vin-, the first output end vo ut+, the second output end vo ut-, one the 4th switch element, one the 5th switch element, one the 6th switch element, one the 6th resistance R 6, one the 7th resistance R 7, one the 8th resistance R 8, one the 9th resistance R 9 and 1 the tenth resistance R 10.This first input end Vin+ and this second input Vin-are used to receive a pair of differential signal of input, and this first output end vo ut+ and this second output end vo ut-are used to receive a pair of differential signal of output.
In this another execution mode, the 4th switch element is one the 4th field effect transistor M2A, and the 5th switch element is one the 5th field effect transistor M2B, and the 6th switch element is one the 6th field effect transistor M4.The 4th field effect transistor M2A, the 5th field effect transistor M2B and the 6th field effect transistor M4 are P type field effect transistor (PMOS).In other embodiments, switch element can change to switch element or the circuit that can realize said function as required.
The annexation of this another execution mode of high-speed comparator is: the grid of the 4th field effect transistor M2A connects this first input end Vin+, its source class connects an end of the 6th resistance R 3, and its drain electrode connects an end of this first output end vo ut+ and the 8th resistance R 8.The grid of the 5th field effect transistor M2B connects this second input Vin-, and its source class connects an end of the 7th resistance R 7, and its drain electrode connects an end of this second output end vo ut-and the 9th resistance R 9.The other end of the 6th resistance R 6 and the other end of the 7th resistance R 7 are connected the drain electrode of the 6th field effect transistor M4 jointly, and the grid of the 6th field effect transistor M4 connects a voltage end Vbp, and its source class connects power end VDD.The other end of the 8th resistance R 8 and the other end of the 9th resistance R 9 are connected an end of the tenth resistance R 10 jointly, and the other end of the tenth resistance R 10 connects earth terminal VSS.
Circuit with Fig. 1 is an example, and the principle Analysis of this high-speed comparator better embodiment is as follows:
1. gain is derived
In the present embodiment, suppose R1=R2=Rd, R3=R4=Rs, the first field effect transistor M1A, the second field effect transistor M1B are input pipe, and this high-speed comparator is carried out monolateral equivalence, can obtain its gain formula and be:
Vout/Vin=-gm·ro·Rd/(Rd+Rs+ro·(1+(gm+gmb)·Rs))
Wherein Vout represents output voltage, and Vin represents input voltage, and gm represents the mutual conductance of the first field effect transistor M1A, and gmb represents the mutual conductance of the second field effect transistor M1B, and ro represents the small-signal output resistance.By suitable biasing, make (gm+gmb) Rsro " Rd, Rs, ro, then gain formula can be reduced to
Vout/Vin=-Rd/ ((1+ η) Rs), wherein η=gmb/gm
Can be got by following formula, the gain of this high-speed comparator is only relevant with Rd, Rs, gmb/gm, if do not consider to serve as a contrast inclined to one side effect, i.e. and metal-oxide-semiconductor source end and substrate short circuit, then gain formula can be changed into:
Vout/Vin=-Rd/Rs
We can mate Rd, Rs in domain accurately, and then its gain is just no longer with the technology conversion, and also irrelevant with bias current.
2. bandwidth analysis
Suppose that the output limit is Pout, make that load capacitance is Cout, then
Pout=1/(Rd·Cout)
Generally speaking, Rd is 5 ~ 10kohm(kilohm), Cout multiply by 10 negative 15 powers for the 50fF(farad), Pout=2 ~ 4GHz(Gigahertz then).
3. cascade
This structure one pass gain is not high, can possess filter effect simultaneously by cascade to obtain high-gain.
High-speed comparator of the present invention is simple in structure, and gain does not change with technique change, and only relevant with the resistors match degree at leakage two ends, field effect transistor source, its bandwidth can be accomplished the GHz level by comparator output resistance and the decision of next stage load capacitance simultaneously.
Claims (7)
1. high-speed comparator, it is characterized in that: described high-speed comparator comprises one first switch element, one second switch element, one the 3rd switch element, one first resistance that links to each other with described first switch element, one second resistance that links to each other with described second switch element, one the 3rd resistance, one the 4th resistance and one the 5th resistance, described the 3rd resistance is connected between described first switch element and described the 3rd switch element, described the 4th resistance is connected between described second switch element and described the 3rd switch element, and described the 5th resistance links to each other with described first resistance and described second resistance.
2. high-speed comparator as claimed in claim 1, it is characterized in that: the input of described first switch element links to each other with a first input end, be connected one first output between described first switch element and described first resistance, the input of described second switch element links to each other with one second input, is connected one second output between described second switch element and described second resistance.
3. high-speed comparator as claimed in claim 2 is characterized in that: described first input end and described second input are used to receive a pair of differential signal of input, and described first output and described second output are used to export a pair of differential signal.
4. high-speed comparator as claimed in claim 3 is characterized in that: described first switch element is one first field effect transistor, and described second switch element is one second field effect transistor, and described the 3rd switch element is one the 3rd field effect transistor.
5. high-speed comparator as claimed in claim 4, it is characterized in that: the grid of described first field effect transistor connects described first input end, its drain electrode connects an end of described first output and described first resistance, its source class connects an end of described the 3rd resistance, the grid of described second field effect transistor connects described second input, its drain electrode connects an end of described second output and described second resistance, its source class connects an end of described the 4th resistance, described first input end and described second input receive the differential signal of a pair of input, and described first output and described second output are exported a pair of differential signal.
6. high-speed comparator as claimed in claim 5 is characterized in that: the other end of described first resistance and the common end that is connected described the 5th resistance of the other end of described second resistance, the other end of described the 5th resistance connects a power end.
7. high-speed comparator as claimed in claim 6, it is characterized in that: the other end of described the 3rd resistance and the common drain electrode that is connected described the 3rd field effect transistor of the other end of described the 4th resistance, the grid of described the 3rd field effect transistor connects a voltage end, and its source class connects an earth terminal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110050693 CN102075169B (en) | 2011-03-03 | 2011-03-03 | High speed comparator |
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| CN 201110050693 CN102075169B (en) | 2011-03-03 | 2011-03-03 | High speed comparator |
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| CN102075169B CN102075169B (en) | 2013-04-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386865A (en) * | 2011-09-22 | 2012-03-21 | 四川和芯微电子股份有限公司 | Operational amplification circuit and system |
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| US6693458B1 (en) * | 2002-09-19 | 2004-02-17 | National Semiconductor Corporation | Apparatus for an optimized high speed comparator |
| CN101562441A (en) * | 2008-10-08 | 2009-10-21 | 西安电子科技大学 | Ultrahigh-speed comparator with low offset |
| CN202014234U (en) * | 2011-03-03 | 2011-10-19 | 四川和芯微电子股份有限公司 | High speed comparator |
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2011
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693458B1 (en) * | 2002-09-19 | 2004-02-17 | National Semiconductor Corporation | Apparatus for an optimized high speed comparator |
| CN101562441A (en) * | 2008-10-08 | 2009-10-21 | 西安电子科技大学 | Ultrahigh-speed comparator with low offset |
| CN202014234U (en) * | 2011-03-03 | 2011-10-19 | 四川和芯微电子股份有限公司 | High speed comparator |
Non-Patent Citations (2)
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| 《上海电气技术》 20091231 江利，赵志宾 一种高速高精度的CMOS比较器的电路 第44-47页 1-7 第2卷, 第4期 * |
| 江利，赵志宾: "一种高速高精度的CMOS比较器的电路", 《上海电气技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386865A (en) * | 2011-09-22 | 2012-03-21 | 四川和芯微电子股份有限公司 | Operational amplification circuit and system |
| CN102386865B (en) * | 2011-09-22 | 2014-07-30 | 四川和芯微电子股份有限公司 | Operational amplification circuit |
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| Publication number | Publication date |
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| CN102075169B (en) | 2013-04-24 |
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Address after: 610041 Sichuan city of Chengdu province high tech Zone Kyrgyzstan Road 33 block A No. 9 Patentee after: IPGoal Microelectronics (Sichuan) Co., Ltd. Address before: 402 room 7, building 610041, incubator Park, hi tech Zone, Sichuan, Chengdu Patentee before: IPGoal Microelectronics (Sichuan) Co., Ltd. |
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Effective date of registration: 20201209 Address after: Room 705, building 2, No. 515, No. 2 street, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang zhexin Technology Development Co., Ltd Address before: 9 / F, block a, 33 Jitai Road, high tech Zone, Chengdu, Sichuan 610041 Patentee before: IPGoal Microelectronics (Sichuan) Co.,Ltd. |