CN102071403A - 一种高利用率的平面磁控溅射靶 - Google Patents
一种高利用率的平面磁控溅射靶 Download PDFInfo
- Publication number
- CN102071403A CN102071403A CN 201110033285 CN201110033285A CN102071403A CN 102071403 A CN102071403 A CN 102071403A CN 201110033285 CN201110033285 CN 201110033285 CN 201110033285 A CN201110033285 A CN 201110033285A CN 102071403 A CN102071403 A CN 102071403A
- Authority
- CN
- China
- Prior art keywords
- target
- magnet
- magnet assembly
- utilization rate
- high utilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 230000033001 locomotion Effects 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000000498 cooling water Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 239000013077 target material Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000010616 electrical installation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100495256 Caenorhabditis elegans mat-3 gene Proteins 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 235000000396 iron Nutrition 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110033285A CN102071403B (zh) | 2011-01-30 | 2011-01-30 | 一种平面磁控溅射靶 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110033285A CN102071403B (zh) | 2011-01-30 | 2011-01-30 | 一种平面磁控溅射靶 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102071403A true CN102071403A (zh) | 2011-05-25 |
CN102071403B CN102071403B (zh) | 2012-09-05 |
Family
ID=44030156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110033285A Active CN102071403B (zh) | 2011-01-30 | 2011-01-30 | 一种平面磁控溅射靶 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102071403B (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102534513A (zh) * | 2011-12-19 | 2012-07-04 | 东莞市汇成真空科技有限公司 | 一种组合磁场的矩形平面阴极电弧蒸发源 |
CN103290377A (zh) * | 2012-06-13 | 2013-09-11 | 成都天马微电子有限公司 | 磁控管溅射方法、磁控溅射电极及其装置 |
CN105551531A (zh) * | 2015-12-01 | 2016-05-04 | 中国工程物理研究院上海激光等离子体研究所 | 一种低温平面靶及其安装方法 |
CN106414794A (zh) * | 2014-02-20 | 2017-02-15 | 因特瓦克公司 | 使用依赖于方向的扫描速度或功率的溅射系统及方法 |
CN106498353A (zh) * | 2015-09-08 | 2017-03-15 | 深圳莱宝高科技股份有限公司 | 一种磁控溅射方法及装置 |
CN109415802A (zh) * | 2016-06-29 | 2019-03-01 | 株式会社爱发科 | 溅射装置用成膜单元 |
CN111863284A (zh) * | 2020-06-24 | 2020-10-30 | 中国工程物理研究院激光聚变研究中心 | 深冷靶低温吸附抑制开启机构 |
CN113174576A (zh) * | 2021-04-25 | 2021-07-27 | 湖南城市学院 | 一种磁极回转的圆形平面磁控溅射靶 |
CN113584449A (zh) * | 2021-07-30 | 2021-11-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种高靶材利用率圆形平面磁控溅射阴极 |
CN114174552A (zh) * | 2019-08-08 | 2022-03-11 | 东京毅力科创株式会社 | 成膜装置和成膜方法 |
CN116837332A (zh) * | 2023-05-09 | 2023-10-03 | 宁波招宝磁业有限公司 | 一种钕铁硼磁体表面磁控溅射方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87106947A (zh) * | 1987-10-12 | 1988-05-18 | 浙江大学 | 分离磁体式平面磁控溅射源 |
CN87106938A (zh) * | 1987-10-12 | 1988-07-13 | 浙江大学 | 多源型平面磁控溅射源 |
CN88100832A (zh) * | 1988-02-10 | 1988-09-28 | 浙江大学 | 专用于沉积大面积薄膜的平面磁控溅射源 |
JPH0718435Y2 (ja) * | 1989-02-28 | 1995-05-01 | 株式会社小松製作所 | パネル受け台のパネルシフト装置 |
JP3514488B2 (ja) * | 1993-06-30 | 2004-03-31 | 株式会社アルバック | マグネトロンスパッタ方法及び装置 |
CN1670243A (zh) * | 2004-03-19 | 2005-09-21 | 株式会社爱发科 | 溅射方法及其装置 |
US7527713B2 (en) * | 2004-05-26 | 2009-05-05 | Applied Materials, Inc. | Variable quadruple electromagnet array in plasma processing |
-
2011
- 2011-01-30 CN CN201110033285A patent/CN102071403B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87106947A (zh) * | 1987-10-12 | 1988-05-18 | 浙江大学 | 分离磁体式平面磁控溅射源 |
CN87106938A (zh) * | 1987-10-12 | 1988-07-13 | 浙江大学 | 多源型平面磁控溅射源 |
CN88100832A (zh) * | 1988-02-10 | 1988-09-28 | 浙江大学 | 专用于沉积大面积薄膜的平面磁控溅射源 |
JPH0718435Y2 (ja) * | 1989-02-28 | 1995-05-01 | 株式会社小松製作所 | パネル受け台のパネルシフト装置 |
JP3514488B2 (ja) * | 1993-06-30 | 2004-03-31 | 株式会社アルバック | マグネトロンスパッタ方法及び装置 |
CN1670243A (zh) * | 2004-03-19 | 2005-09-21 | 株式会社爱发科 | 溅射方法及其装置 |
US7527713B2 (en) * | 2004-05-26 | 2009-05-05 | Applied Materials, Inc. | Variable quadruple electromagnet array in plasma processing |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102534513A (zh) * | 2011-12-19 | 2012-07-04 | 东莞市汇成真空科技有限公司 | 一种组合磁场的矩形平面阴极电弧蒸发源 |
CN102534513B (zh) * | 2011-12-19 | 2014-04-16 | 东莞市汇成真空科技有限公司 | 一种组合磁场的矩形平面阴极电弧蒸发源 |
CN103290377A (zh) * | 2012-06-13 | 2013-09-11 | 成都天马微电子有限公司 | 磁控管溅射方法、磁控溅射电极及其装置 |
CN103290377B (zh) * | 2012-06-13 | 2015-05-06 | 成都天马微电子有限公司 | 磁控管溅射方法、磁控溅射电极及其装置 |
CN106414794A (zh) * | 2014-02-20 | 2017-02-15 | 因特瓦克公司 | 使用依赖于方向的扫描速度或功率的溅射系统及方法 |
CN106498353A (zh) * | 2015-09-08 | 2017-03-15 | 深圳莱宝高科技股份有限公司 | 一种磁控溅射方法及装置 |
CN105551531A (zh) * | 2015-12-01 | 2016-05-04 | 中国工程物理研究院上海激光等离子体研究所 | 一种低温平面靶及其安装方法 |
CN105551531B (zh) * | 2015-12-01 | 2017-07-07 | 中国工程物理研究院上海激光等离子体研究所 | 一种低温平面靶及其安装方法 |
CN109415802A (zh) * | 2016-06-29 | 2019-03-01 | 株式会社爱发科 | 溅射装置用成膜单元 |
CN114174552A (zh) * | 2019-08-08 | 2022-03-11 | 东京毅力科创株式会社 | 成膜装置和成膜方法 |
CN111863284A (zh) * | 2020-06-24 | 2020-10-30 | 中国工程物理研究院激光聚变研究中心 | 深冷靶低温吸附抑制开启机构 |
CN111863284B (zh) * | 2020-06-24 | 2022-03-25 | 中国工程物理研究院激光聚变研究中心 | 深冷靶低温吸附抑制开启机构 |
CN113174576A (zh) * | 2021-04-25 | 2021-07-27 | 湖南城市学院 | 一种磁极回转的圆形平面磁控溅射靶 |
CN113584449A (zh) * | 2021-07-30 | 2021-11-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种高靶材利用率圆形平面磁控溅射阴极 |
CN113584449B (zh) * | 2021-07-30 | 2023-07-28 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种高靶材利用率圆形平面磁控溅射阴极 |
CN116837332A (zh) * | 2023-05-09 | 2023-10-03 | 宁波招宝磁业有限公司 | 一种钕铁硼磁体表面磁控溅射方法 |
CN116837332B (zh) * | 2023-05-09 | 2023-11-17 | 宁波招宝磁业有限公司 | 一种钕铁硼磁体表面磁控溅射方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102071403B (zh) | 2012-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102071403B (zh) | 一种平面磁控溅射靶 | |
CN106488996B (zh) | 具有动靶的溅镀装置 | |
US5833815A (en) | Sputter deposition system | |
CN111250853B (zh) | 基于电子束熔丝增材制造的同步冷却装置及方法 | |
CN201006891Y (zh) | 移动磁极式扫描溅射源 | |
CN101280420B (zh) | 一种具有磁场增强和调节功能的磁控溅射靶 | |
CN105568240B (zh) | 磁控溅射装置及磁控溅射方法 | |
CN110128022B (zh) | 一种大型曲面玻璃真空溅射镀膜装置 | |
CN106947944A (zh) | 一种蒸镀坩埚、蒸镀源、蒸镀装置及蒸镀方法 | |
CN101805889A (zh) | 磁靶及具有该磁靶的磁控溅射设备 | |
CN203021645U (zh) | 一种移动磁场平面溅射靶 | |
JP2001254175A (ja) | 平板マグネトロンスパッタリング装置 | |
CN113755809A (zh) | 磁控溅射装置及其控制方法 | |
CN102953039A (zh) | 一种真空磁控溅射镀膜用的旋转阴极 | |
CN202643828U (zh) | 一种磁控溅射阴极移动靶 | |
CN207877849U (zh) | 真空镀膜装置 | |
CN202323010U (zh) | 一种真空镀膜用基片水平输送装置 | |
CN117144301B (zh) | 一种试验型真空蒸镀机 | |
US9449799B2 (en) | Film deposition device | |
CN201990719U (zh) | 靶材金属化蒸发镀膜用多功能夹具 | |
KR101352379B1 (ko) | 스퍼터링 장치 | |
CN204281846U (zh) | 一种真空离子镀膜设备的新型磁场结构 | |
CN202307784U (zh) | 一种磁控溅射用平面阴极 | |
CN102534522A (zh) | 一种磁控溅射源及磁控溅射设备 | |
KR101419429B1 (ko) | 스퍼터 증착용 무빙장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Planar magnetron sputtering target Effective date of registration: 20140423 Granted publication date: 20120905 Pledgee: China Merchants Bank, Limited by Share Ltd, Dongguan Dongcheng Branch Pledgor: Dongguan Huicheng Vacuum Science & Technology Co., Ltd. Registration number: 2014990000286 |
|
PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No.2, Longyuan Road, Yanwu, Dalingshan Town, Dongguan City, Guangdong Province 523000 Patentee after: Guangdong Huicheng Vacuum Technology Co.,Ltd. Address before: 523820 Guangdong Province, Dongguan City Dalingshan Town Village fourth industrial zone. Patentee before: DONGGUAN HUICHENG VACUUM TECHNOLOGY Co.,Ltd. |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220323 Granted publication date: 20120905 Pledgee: China Merchants Bank Limited by Share Ltd. Dongguan Dongcheng Branch Pledgor: Guangdong Huicheng Vacuum Technology Co.,Ltd. Registration number: 2014990000286 |
|
PM01 | Change of the registration of the contract for pledge of patent right | ||
PM01 | Change of the registration of the contract for pledge of patent right |
Change date: 20220323 Registration number: 2014990000286 Pledgor after: Guangdong Huicheng Vacuum Technology Co.,Ltd. Pledgor before: DONGGUAN HUICHENG VACUUM TECHNOLOGY CO.,LTD. |