CN102057076B - Coating system and method for coating a substrate - Google Patents
Coating system and method for coating a substrate Download PDFInfo
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- CN102057076B CN102057076B CN2009801216674A CN200980121667A CN102057076B CN 102057076 B CN102057076 B CN 102057076B CN 2009801216674 A CN2009801216674 A CN 2009801216674A CN 200980121667 A CN200980121667 A CN 200980121667A CN 102057076 B CN102057076 B CN 102057076B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
A coating system 1 comprises a lock-in chamber 3 and a lock-out chamber 4. Furthermore, the coating system comprises a first transfer chamber 5 connected with the lock-in chamber 3 and the lock-out chamber 4. In the transfer chamber 5 a first rotatable transfer module 6 is arranged. The substrate holders 7a, 7b may be rotated around a central axis such that substrate holders 7a and 7b may be positioned in alignment with the lock-in chamber 3 and the lock-out chamber 4, respectively. The coating station 1 further includes a first process chamber 8 and a second process chamber 9. Furthermore, the coating system 1 includes a second transfer chamber 10 having a second rotatable transfer module 11 including a third substrate holder 12a and a fourth substrate holder 12b. The second transfer chamber is connected with the first process chamber 8 and the second process chamber 9 as well as a third process chamber 13 and a fourth process chamber 14. The third process chamber 13 and the fourth process chamber 14 are arranged parallel, i.e. like a cluster arrangement, at the second transfer chamber 10. The invention provides for a possibility to increase the availability of the system by a sandwich arrangement of two parallel coating chambers 8 and 9 arranged on a forward path F and a return path R, respectively, between two transfer chambers 5 and 10 which are configured to transfer the substrate from the forward path F to the return path R and vice versa.
Description
Technical field
The present invention relates to comprise for the application system that substrate is processed: the chamber layout, described chamber layout comprises the first treatment chamber and the second treatment chamber; Wherein, described the first treatment chamber is disposed on the series connection progress path partly of described application system, and described the second treatment chamber is disposed on the series connection return path partly of described application system.And, the invention still further relates to for especially in the method for aforesaid application system coated substrate.
Background technology
In a lot of technology are used, in a series of coating steps, a plurality of layers stacking (layer stack) are deposited on the substrate.For example, in TFT (thin film transistor) metalized, deposit two or three different metal by sputter process.Because the different coating rates in the different treatment steps and a plurality of layers different thickness altered a great deal in the coating worktable deposition used treatment time of different layers.
In order to deposit the stacking a lot of configuration that has proposed coating and treatment chamber of a plurality of layer.For example, use the coating chamber of series arrangement, also use the coating chamber of cluster layouts.A lot of coating chambers that typical cluster layouts comprises the central management chamber and is connected to the central management chamber.Coating chamber can be equipped with to carry out identical or different coating processing.Yet although in series system the management of processing is very easy to, the treatment time was determined by the longest treatment time.Therefore, the efficient of impact processing.On the other hand, cluster tool allows different cycle time (cycle time).Yet management may be very complicated, and it need to provide in the central management chamber meticulous transmission system.
Made up the replaceable design of series connection and the design of trooping and described in file EP 1 801 843 A1, the content of this document is incorporated into this by reference.File has been described and has been used for the stacking application system of deposition TFT layer, this application system has: import chamber (lock-in chamber) into, the metallization work platform that is used for the first metalized, the central management chamber, be used for two metallization work platforms of the second metalized, and be used for first the second metallization work platform of processing.Be used for the second metallization chamber of processing by layout for being connected in parallel to each other and being used alternatingly.The treatment chamber that is used for the first metalized by series arrangement so that each substrate is all processed two chambers.The cycle time of system, the combination by series connection design and the design of trooping was reduced, and this is to have improved simultaneously throughput because combination has reduced the complicacy of processing.
File US 2007/020903A2 discloses and has been used for making the method for membrane stack and the treatment system that is used for forming at substrate membrane stack.
Yet in the situation that specific coating chamber must be processed or clean (when for example changing sputtering target) through safeguarding, the operation of application system must stop fully.
Summary of the invention
Purpose of the present invention
The objective of the invention is to improve overall throughput and the efficient of application system, especially use for the TFT metal.
Technical scheme
This purpose is by providing application system according to claim 1, and method for coated substrate according to claim 11 solves.Dependent claims is for preferred feature of the present invention.
Be used for substrate is processed and comprised according to a kind of application system of the present invention: the chamber layout, described chamber layout comprises the first treatment chamber and the second treatment chamber; Wherein, described the first treatment chamber is disposed on the series connection progress path partly of described application system, and described the second treatment chamber is disposed on the series connection return path partly of described application system.Described the first treatment chamber and described the second treatment chamber both are disposed between the first transfer chamber and the second transfer chamber, and described the first transfer chamber and described the second transfer chamber are configured to substrate is sent to the described return path of described the second series connection part and vice versa from the described progress path of described the first series connection part.
In the routine work pattern, namely, if the first treatment chamber and the second treatment chamber are all in running order, then progress path is defined as being defined as mobile route from the second transfer chamber to the substrate that spreads out of the chamber from importing the chamber into to the mobile route of the substrate of the second transfer chamber and return path.In order to transmit along transfer path, substrate can be supported by substrate holder.Substrate can be attached to substrate holder.In another embodiment, substrate can be in the situation that there be carriage (for example utilizing the air cushion transmission system) to pass through application system.
The first treatment chamber and the second treatment chamber are arranged in parallel to be arranged and is arranged to and import/spread out of worktable into and the first transfer chamber is connected.The first transfer chamber is disposed in and imports into/spread out of between worktable and first and second treatment chamber, and is configured to and will be transferred to respectively the first treatment chamber and the second treatment chamber from the substrate that imports/spread out of the worktable reception into.In addition, application system comprises the second transfer chamber, and this second transfer chamber is arranged to the substrate of connecting with first and second treatment chamber and being configured to receive from the first treatment chamber or the second treatment chamber and is sent to another chamber.
Treatment chamber can be any work for the treatment of platform, especially for settled layer on the first substrate or the stacking coating worktable of layer.In the TFT coating processing, two, three or more metal levels are deposited on the substrate.The first treatment chamber and the second treatment chamber can be the washing worktable that for example is used for providing by the first sputter process the Mo layer.The 3rd treatment chamber and the 4th treatment chamber can be the washing worktable that for example is used for providing at the first substrate by the second sputter process the A1 layer.More substrate, such as second, third, the 4th substrate etc. can enter application system and in application system with the first substrate one after the other with being processed temporally.That is, different processing and transmitting step can be overlapping.
Application system is characterised in that the specified arrangement of management and work for the treatment of platform.Two transfer chambers all can receive substrate and substrate can be fed to the first and second treatment chambers both from each treatment chamber.Therefore, in the first or second treatment chamber is because in the pent situations such as preparation, maintenance, cleaning, another in the first and second treatment chambers still can be worked and the substrate by treatment chamber is processed.Certainly, when being closed for one in the first or second treatment chamber, increase cycle time, and this is because each substrate is not will pass through the second treatment chamber by the first treatment chamber on both direction.Therefore in tandem paths owing to there is bottleneck in the first or second treatment chamber that lacks.When progress path and the shared specific treatment chamber of return path, the throughput of whole application system and Efficiency Decreasing.Yet, can avoid the work of whole application system must not non-stop situation, thereby improve the operability of application system.
Extra transfer chamber has been introduced in design described in file EP 1 801 843 A1, and it allows to use the corresponding coating worktable with specific coating worktable is arranged in parallel to make the substrate on the tandem paths walk around specific coating worktable.This creationary concept can be applied to each application system, in application system, the alignment processing chamber that treatment chamber in the progress path of series system (perhaps combination series connection-cluster system) is arranged in the return path with series system (perhaps combination connects-cluster system) is in parallel, these two treatment chambers all are disposed between the first transfer chamber and the second transfer chamber, permission will be at progress path (or return path) on the contrary the substrate that transmits by change to from progress path return path or, walk around in two treatment chambers.When leading to respectively in the way of the third and fourth treatment chamber and carrying out in the situation of identical processing in two treatment chambers from the way that the third and fourth treatment chamber returns respectively, this design is especially applicable.
Preferably, the chamber layout comprises for respectively substrate being imported into described application system and/or substrate being spread out of importing into outside the described application system/spread out of worktable.The first treatment chamber and the second treatment chamber are arranged to and import/spread out of worktable, the first transfer chamber and the second transfer chamber into and connect.
Particularly, the first treatment chamber and the second treatment chamber comprise for the coated tool by the first coating processing settled layer on substrate.The first coating processing can be metalized, for example the Mo metalized.Coating processing can be sputter process.
In a preferred embodiment of the invention, the chamber layout comprises that at least wherein the 3rd treatment chamber is connected to the second treatment chamber at least the three treatment chamber that substrate is processed.
Particularly, the chamber layout comprises the 4th treatment chamber that is arranged in parallel with described the 3rd treatment chamber that is connected to described the second transfer chamber.The 4th treatment chamber can be arranged in parallel with the 3rd treatment chamber, and the second transfer chamber substrate of being configured to receive from the first treatment chamber and the second treatment chamber respectively is sent to the one the 3rd treatment chamber and the 4th treatment chamber.But the same coat of sediment-filled phase in the 3rd treatment chamber and the 4th treatment chamber, for example, the third and fourth treatment chamber can be for the coating worktable by sputter process depositing Al layer on substrate.The thickness of lower much larger than it due to the fact that the thickness of Al layer in the TFT system to the Mo layer that it on cover, thus the 3rd treatment chamber and the 4th treatment chamber as cluster tool work, for example, they alternately load from the second transfer chamber.
In fact, the first transfer chamber is arranged at the first and second treatment chambers and/or imports/spread out of transferring substrate at least between the two in the chamber into.The second transfer chamber is arranged for the transferring substrate at least between the two in the first, second, third and/or the 4th treatment chamber.The first and/or second transfer chamber can be the vacuum transmission chamber.
In conventional processing, the first substrate transmits along progress path from importing the chamber into,, enters the first treatment chamber and applies to obtain therein first by the first transfer chamber along the first substrate holder.Then the first substrate be sent to the second transfer chamber and enter the 3rd treatment chamber and the 4th treatment chamber in any apply to obtain therein second.Afterwards, the first substrate is sent to passback on return path, enters the second treatment chamber to obtain therein the 3rd coating by the second transfer chamber.Then the first substrate is transmitted through the first transfer chamber and enters spread out of the chamber so that the substrate through applying is shifted out from application system.
Alternately, for example in the situation that the first coating chamber is not in running order, the substrate that is just transmitting at progress path can alternatively be sent to the second treatment chamber and apply to obtain first.Perhaps, for example in the situation that the second coating chamber is not in running order, just turning back in the way of the first transfer chamber at the substrate that return path transmits, can be sent to the first treatment chamber rather than the second coating chamber to obtain the 3rd coating.
No matter whenever in running order the first treatment chamber and the second treatment chamber be, and the series connection-cluster system of combination provides high-level efficiency.If one or more can not the use in the treatment chamber, system still can carry out work with the efficient that has reduced, but can almost guarantee continuously the operability of application system.
Preferably, the 3rd treatment chamber and the 4th treatment chamber comprise for the coated tool that uses the second coating processing settled layer on substrate.The second coating processing can make metalized, for example the Al metalized.The second metalized can be sputter process.
The first treatment chamber and the second treatment chamber are configured to provide the first coating processing, and the 3rd treatment chamber and the 4th treatment chamber are configured to provide the second coating processing.For example, in the TFT application system, the first processing can be the first metalized, and the second processing can be the second metalized.One or both in these two processing can utilize sputtering method to carry out.
Particularly, importing/spread out of worktable into comprises and imports the chamber into and spread out of the chamber.Import the chamber into and defined the beginning of the progress path of substrate processed in application system, the chamber of spreading out of has defined the end of the return path of substrate.For example, progress path is defined in and imports between chamber and the second transfer chamber, and return path is defined in the second transfer chamber and spreads out of between the chamber.Progress path or return path can be arranged in the chamber on the path owing to being in such as maintenance purpose etc. in the situation of off working state and interrupting.Yet, the layout of the first transfer chamber and the second transfer chamber allows substrate to walk around the respectively treatment chamber on progress path and return path, and this is because the first and second treatment chambers are configured to substrate is sent to return path and vice versa from the progress path of application system.
Preferably, the first transfer chamber and the first treatment chamber be connected treatment chamber and be connected, the first treatment chamber be connected treatment chamber and be connected with the second transfer chamber, and the 3rd treatment chamber is connected with the second transfer chamber with the 4th treatment chamber.
The first transfer chamber can comprise the first rotatable module that has at least one substrate holder that keeps substrate.The first rotatable module be configured to make substrate holder with respect to the first treatment chamber, the second treatment chamber, import chamber and/or the chamber of spreading out of into and aim to receive substrate from it, perhaps the substrate that receives in the transfer chamber is delivered to each chamber.
The second transfer chamber can comprise the second rotatable module that has at least one substrate holder that keeps substrate.The second rotatable module is configured to make substrate holder to aim in line to receive substrate from it with respect to the first treatment chamber, the second treatment chamber, the 3rd treatment chamber and/or the 4th treatment chamber, perhaps the substrate that receives in the transfer chamber is delivered to each chamber.
Particularly, the first and/or second rotatable module has for the first substrate holder and the second substrate holder that keep the first substrate and/or the second substrate at least.The first substrate holder become by layout with the second substrate holder so that, when the first substrate holder was aligned to receive the first substrate from specific chamber or sends substrate to specific chamber, the second substrate holder was aligned to accept the second substrate from another chamber or sends the second substrate to another chamber.(one or more) rotatable module (when rotating substrate holder) changes substrate with respect to the alignment condition of transfer path.The angle of the change of alignment condition is corresponding to the rotational angle of rotatable module.Particularly, for substrate is transferred to the second transfer path from the first transfer path, module is rotated 180 °.
The method for coated substrate according to the present invention in aforesaid application system may further comprise the steps:
A) via importing the chamber into substrate is imported in the described application system;
B) described substrate is sent in the first transfer chamber;
C) described substrate is sent in the one in the first treatment chamber and the second treatment chamber to utilize first to process described substrate is processed;
D) described substrate is sent in the second transfer chamber; And
Described substrate is sent in the one in the 3rd treatment chamber and the 4th treatment chamber to utilize second to process described substrate is processed.Preferably the method is further comprising the steps of:
F) substrate is sent to the second transfer chamber from the 3rd treatment chamber or the 4th treatment chamber; And
G) substrate is sent in described the first treatment chamber or described the second treatment chamber to utilize the 3rd processing that substrate is processed.The 3rd processing can be identical or different with the first processing.
Step g) can comprise the steps: described substrate is sent to and described step c) in the identical treatment chamber to utilize the 3rd to process described substrate is processed.When one in the first or second treatment chamber because maintenance purpose etc. can be used this step when being in off working state.
The method is further comprising the steps of: h) described substrate is sent in described the first transfer chamber; And i) described substrate is sent to spreads out of in the chamber.
Preferably the method is used to produce the TFT thin film transistor.
Aforesaid method repeats by the second substrate is processed one after the other with more substrate.Substrate is one after the other by the work for the treatment of platform.In the cluster configurations of application system, can be simultaneously, namely the time processes two or more substrates (depending on the number for the coating chamber of particular procedure) overlappingly.In (one or more) series connection part of the configuration of application system, substrate is one after the other managed in the chamber throughout and is processed.
By the present invention, can realize the high productive capacity of application system, basically avoid the shut-down period of total system simultaneously.
Require the right of above-mentioned feature arbitrary combination in essence.
Description of drawings
With reference to the accompanying drawings, from the description of following preferred embodiment, more Characteristics and advantages of the present invention is with self-evident.Accompanying drawing is explained
Fig. 1 is the schematic representation according to application system of the present invention; And
Fig. 2 shows the different working modes according to application system of the present invention.
Embodiment
As shown in Figure 1, application system 1 according to the present invention comprises and imports/spread out of (lock-in/lock-out) worktable into, and this imports/spread out of worktable into and comprises and import chamber 3 into and spread out of chamber 4.Substrate is presented and is comprised with receiving unit 2 and to swing module (air pressure) and be used for that substrate is fed to system 1 and/or be received in the pneumatic rotating module of substrate treated in the system 1.In addition, application system 1 comprises and imports chamber 3 and the first transfer chamber 5 that is connected chamber 4 and is connected into.
In transfer chamber 5, arranged the first rotatable transport module 6.Rotatable module 6 has two substrate holder 7a that are disposed on the rotatable platform, 7b.Substrate holder 7a, 7b can rotate around central shaft, so that substrate holder 7a, 7b can be placed as respectively with importing chamber 3 into and spread out of chamber 4 and aim at.
Apply worktable 1 and comprise that also the first treatment chamber 8 and the second treatment chamber 9, the first and second treatment chambers all are equipped with for depositing the first metal layer at substrate, for example, the Mo metal layer.The first treatment chamber 8 be connected treatment chamber 9 and be connected with the first transfer chamber 5.Rotatable transport module 6 can be rotated so that the first substrate holder 7a with import chamber 3 into and the first treatment chamber 8 is aimed at, and the second substrate holder 7b with spread out of the 9 one-tenth alignings in chamber 4 and the second treatment chamber, and vice versa.
In addition, application system 1 comprises that the second transfer chamber 10, the second rotatable transport modules 11 with second rotatable transport module 11 comprise the 3rd substrate holder 12a and the 4th substrate holder 12b.The second transfer chamber 10 is configured to similar or the same with the first transfer chamber 5.
The second transfer chamber is connected to the first treatment chamber 8 and the second treatment chamber 9 and the 3rd treatment chamber 13 and the 4th treatment chamber 14.The 3rd treatment chamber 13 and the 4th treatment chamber 14 are arranged at the second transfer chamber 10 places (that is, as cluster layouts) in parallel.The 3rd treatment chamber 13 and the 4th treatment chamber 14 are equipped with for depositing the second metal level, for example Al metal layer at substrate.Rotatable transport module 11 can be rotated, so that the 3rd substrate holder 12a aims at the first treatment chamber 8 and the 3rd treatment chamber 13, and the 4th substrate holder 12b aims at the second treatment chamber 9 and the 4th treatment chamber 14, and vice versa.
The series connection progress path F of substrate production line that imported chamber 3, the first substrate holder 7a and the first treatment chamber 8 boundary's justice into.The second treatment chamber 9, the second substrate holder 7b and spread out of the series connection return path R that production line has been defined in chamber 4.The second transfer chamber 10, the three treatment chambers 13 and the 4th treatment chamber 14 have defined cluster tool, wherein treatment chamber 13 in parallel and the 4th treatment chamber 14 by layout at the second transfer chamber 10 places.Can also exist and the third and fourth treatment chamber identical category or different classes of other coating chambers.
In the coating processing of routine, namely when the first treatment chamber 8, the second treatment chambers, 9, the three treatment chambers 13 and the 4th treatment chamber 14 were in running order, the first substrate was imported in system to enter the first transfer chamber 5 via importing chamber 3 into.The first substrate that enters the first transfer chamber 5 is sent in the first treatment chamber through the first substrate holder 7a, to obtain the first metal layer, for example Mo layer by sputter process.Then, the first substrate is sent in the second transfer chamber 10.The first substrate is sent in the 3rd treatment chamber 13 or the 4th treatment chamber 14 subsequently, to obtain the second metal layer by the second sputter process, and Al layer for example.Because the second layer is than the first bed thickness, therefore ratio cycle time for generation of the second layer is significantly longer for generation of the cycle time of layer in the first treatment chamber 8 or the second treatment chamber 9 in the 3rd treatment chamber 13 or the 4th treatment chamber 14.
During this period, the second substrate can enter the second transfer chamber 10 via importing chamber 3, the first transfer chambers 5 and the first treatment chamber 8 into.The second substrate is transferred to arbitrary treatment chamber that the 3rd treatment chamber 13 and the 4th treatment chamber 14 are not occupied by the first substrate among both.Then, the first substrate is transmitted gets back to the second transfer chamber 10 and the second treatment chamber 9, to obtain the 3rd metal layer, for example Mo layer in the first sputter process.
During this period, the 3rd substrate can enter the second transfer chamber 10 and be transferred to the 3rd treatment chamber 13 and arbitrary treatment chamber that the 4th treatment chamber 14 is not occupied by the second substrate among both.When the first substrate was transmitted through the first transfer chamber 5 and spreads out of chamber 4, the second substrate was sent to the second treatment chamber 9 to obtain the 3rd metal layer.It is stacking to deposit the TFT layer thereon by application system that more substrate can be followed the 3rd substrate.
In this (routine) operating mode, substrate is transmitted between progress path F and return path R.The first transfer chamber 5 as with substrate directly from importing that chamber 3 is transferred to the first treatment chamber 8 into and at the second treatment chamber 9 with spread out of the transfer chamber of transmission between the chamber 4.Rotating module 6 keeps the predetermined position.
In another indicated in the drawings situation, the second treatment chamber 9 is owing to safeguarding that (for example changing sputtering target) is in off working state.When this situation occured, the first treatment chamber 8 usefulness acted on each processed in application system 1 substrate deposition first metal layer and the treatment chamber of the 3rd metal layer.
Particularly, the first substrate enters in the application system 1 via importing chamber 3 into, and is sent in the first treatment chamber 8 along the first substrate holder 7a by the first transfer chamber 5, to obtain the first metal layer by the first sputter process, and Mo layer for example.Then, the first substrate be sent in the second transfer chamber 10 and be sent to the 3rd treatment chamber 13 and the 4th treatment chamber 14 in one in, to obtain the second metal level by the second sputter process, Al layer for example.Afterwards, when the second substrate entered the second transfer chamber 10 from the first treatment chamber 8, the first substrate was transferred back to the second transfer chamber 10.Then, when the second substrate was sent to the 3rd treatment chamber 13 or the 4th treatment chamber 14, the first substrate was aimed at and is transferred back in the first treatment chamber 8 to obtain the 3rd metal layer with the first treatment chamber 8.Then, the first substrate enters in the first transfer chamber 5.Rotatable transport module 6 is rotated so that the first substrate with spread out of chamber 4 and aim at.In the situation that rotatable transport module 6 is in the position, another substrate can enter in the first transfer chamber 5 via importing chamber 3 into.Afterwards, the 3rd substrate is processed in the first treatment chamber 8.
This process enters application system 1 along with new substrate and another substrate of application system 1 and continuously repetition are left in replacement.Certainly, in the situation of shut-down period of the first treatment chamber 8 or the second treatment chamber 9 (also having the 3rd treatment chamber 13 or the 4th treatment chamber 14), process the substrate that ascertains the number and to increase used cycle time.Yet, do not need to stop the operation of whole application system 1, thereby guaranteed the operability of system.During passing through the transmission of application system 1, substrate is arranged with substantially vertical attitude usually.The vacuum-sealing that sluice valve is used for the chamber is installed between the chamber.
In the second operating mode, for example, when the second treatment chamber 9 is in off working state, walk around the second treatment chamber 9 from the substrate that the 3rd treatment chamber 13 or the 4th treatment chamber 14 return.The first transfer chamber 5 and the second transfer chamber 10 can make substrate leave return path R and walk around the second treatment chamber 9 at progress path F.
Fig. 2 has illustrated the different working modes according to application system of the present invention.
The first operating mode a) in, the first treatment chamber 8, the second treatment chambers, 9, the three treatment chambers 13 and the 4th treatment chamber 14 are all in running order.Therefore, can carry out above-mentioned conventional coating procedure.In this operating mode, substrate in system in the chamber 8 (Mo), 13 or 14 (Al; Replacedly), and among 9 (Mo) one after the other processed.That is, the first substrate, the 3rd substrate, the 5th substrates etc. are processed in the 3rd Room, and the second substrate, the 4th substrate, the 6th substrates etc. are processed in the 4th treatment chamber 14.Therefore will increase cycle time.
At the second operating mode b) in, for the identical deposition of Mo layer and Al layer and the 4th treatment chamber 14 is in the situation of off working state, increased s cycle time.Therefore, bottleneck is the Al coating processing in the 3rd treatment chamber 13 and the 4th treatment chamber 14 respectively.
At the 3rd operating mode c) in, the second treatment chamber 9 is in off working state.Owing to only in the first treatment chamber 8, depositing for all substrate Mo layers, so increase cycle time.Bottleneck in this pattern is transmission and the rotation of the substrate in the transfer chamber, that is, and and the substrate management.
At the 4th operating mode d) in, the first treatment chamber 8 and the 4th treatment chamber 14 are being in off working state.Cycle time is owing to following bottleneck increases: the Al in the management in transfer chamber 5 and transfer chamber 10 and the 3rd treatment chamber 13 applies.
Generally speaking, the invention provides the operability that sandwich layout as described below improves system: the coating chamber of two parallel connections by layout between two transfer chambers, one in two coating chambers of placing side by side belongs to progress path F, another one belongs to return path R, and two transfer chambers are configured to substrate is sent to return path R and vice versa from progress path F.
Claims (15)
1. an application system (1) is used for substrate is processed, and comprises:
Chamber layout, described chamber layout comprise the first treatment chamber (8) and the second treatment chamber (9);
Wherein, described the first treatment chamber (8) is disposed on the series connection progress path (F) partly of described application system (1), and described the second treatment chamber (9) is disposed on the series connection return path (R) partly of described application system (1)
Described application system is characterised in that
Described the first treatment chamber (8) and described the second treatment chamber (9) both are disposed between the first transfer chamber (5) and the second transfer chamber (10), and described the first transfer chamber (5) and described the second transfer chamber (10) are configured to substrate is sent to the described return path (R) of described the second series connection part and vice versa from the described progress path (F) of described the first series connection part.
2. application system according to claim 1 (1),
It is characterized in that
Described chamber layout comprises for respectively substrate being imported into described application system (1) and/or substrate being spread out of imports/spreads out of worktable (2) into outside the described application system (1);
Wherein said the first treatment chamber (8) and described the second treatment chamber (9) are arranged to and described importing into/spread out of worktable (2), described the first transfer chamber (5) and described the second transfer chamber (10) to connect.
3. application system according to claim 1 and 2 (1),
It is characterized in that
Described the first treatment chamber (8) and described the second treatment chamber (9) comprise for the coated tool by the first coating processing settled layer on substrate.
4. application system according to claim 1 (1),
It is characterized in that
Described chamber layout comprises that at least wherein said the 3rd treatment chamber (13) is connected to the second treatment chamber (9) for the 3rd treatment chamber (13) that substrate is processed.
5. application system according to claim 4 (1),
It is characterized in that
Described chamber layout comprises the 4th treatment chamber (14) that is arranged in parallel with described the 3rd treatment chamber (13) that is connected to described the second transfer chamber (10).
6. application system according to claim 5 (1),
It is characterized in that
Described the 3rd treatment chamber (13) and described the 4th treatment chamber (14) comprise for the coated tool at the second coating processing settled layer on substrate.
7. application system according to claim 2 (1),
It is characterized in that
Described importing into/spread out of worktable (2) comprises and imports chamber (3) into and spread out of chamber (4).
8. application system according to claim 5 (1),
It is characterized in that
Described the first transfer chamber (5) and described the first treatment chamber (8) be connected the second treatment chamber (9) and be connected, and described the first treatment chamber (8) be connected the second treatment chamber (9) and be connected with described the second transfer chamber (10), and described the 3rd treatment chamber (13) be connected the 4th treatment chamber (14) and be connected with described the second transfer chamber (10).
9. application system according to claim 1 (1),
It is characterized in that
Described the first transfer chamber (5) comprises the first rotatable module (6) that has at least one substrate holder (7a, 7b) that keeps substrate.
10. application system according to claim 1 (1),
It is characterized in that
Described the second transfer chamber (10) comprises the second rotatable module (11) that has at least one substrate holder (12a, 12b) that keeps substrate.
11. the method for coated substrate in each described application system in according to claim 1 to 10 may further comprise the steps:
A) via importing the chamber into substrate is imported in the described application system;
B) described substrate is sent in the first transfer chamber;
C) described substrate is sent in the one in the first treatment chamber and the second treatment chamber to utilize first to process described substrate is processed;
D) described substrate is sent in the second transfer chamber; And
E) described substrate is sent in the one in the 3rd treatment chamber and the 4th treatment chamber to utilize second to process described substrate is processed.
12. method according to claim 11,
It is characterized in that
Described method is further comprising the steps of:
F) described substrate is sent to described the second transfer chamber from described the 3rd treatment chamber or the 4th treatment chamber; And
G) described substrate is sent in described the first treatment chamber or described the second treatment chamber to utilize the 3rd processing that described substrate is processed.
13. according to claim 11 or 12 described methods,
It is characterized in that
Step g) comprise the steps: described substrate is sent to and described step c) in the identical treatment chamber to utilize the 3rd to process described substrate is processed.
14. according to claim 11 or 12 or 13 described methods,
It is characterized in that
Described method is further comprising the steps of: h) described substrate is sent in described the first transfer chamber; And i) described substrate is sent to spreads out of in the chamber.
15. each described method in 14 according to claim 11,
It is characterized in that
Described method is used to produce the TFT thin film transistor.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/135,581 | 2008-06-09 | ||
| EP08157866.8 | 2008-06-09 | ||
| US12/135,581 US20090304907A1 (en) | 2008-06-09 | 2008-06-09 | Coating system and method for coating a substrate |
| EP20080157866 EP2133445B1 (en) | 2008-06-09 | 2008-06-09 | Coating System and Method for Coating a Substrate |
| PCT/EP2009/053105 WO2010000503A1 (en) | 2008-06-09 | 2009-03-16 | Coating system and method for coating a substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102057076A CN102057076A (en) | 2011-05-11 |
| CN102057076B true CN102057076B (en) | 2013-03-06 |
Family
ID=41100800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801216674A Expired - Fee Related CN102057076B (en) | 2008-06-09 | 2009-03-16 | Coating system and method for coating a substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5657527B2 (en) |
| KR (1) | KR20110018425A (en) |
| CN (1) | CN102057076B (en) |
| TW (1) | TWI495753B (en) |
| WO (1) | WO2010000503A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011137371A2 (en) * | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Vertical inline cvd system |
| TWI451521B (en) * | 2010-06-21 | 2014-09-01 | Semes Co Ltd | Substrate treating apparatus and substrate treating method |
| EP2489759B1 (en) * | 2011-02-21 | 2014-12-10 | Applied Materials, Inc. | System for utilization improvement of process chambers and method of operating thereof |
| KR102076516B1 (en) * | 2012-09-10 | 2020-02-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Substrate processing system and method of processing substrates |
| EP3102715A1 (en) * | 2014-02-04 | 2016-12-14 | Applied Materials, Inc. | Evaporation source for organic material, apparatus having an evaporation source for organic material, system having an evaporation deposition apparatus with an evaporation source for organic materials, and method for operating an evaporation source for organic material |
| DE102016125278A1 (en) * | 2016-12-14 | 2018-06-14 | Schneider Gmbh & Co. Kg | Apparatus, method and use for coating lenses |
| WO2021013361A1 (en) * | 2019-07-25 | 2021-01-28 | Applied Materials, Inc. | Substrate processing system for processing of a plurality of substrates and method of processing a substrate in an in-line substrate processing system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1750890A (en) * | 2003-02-21 | 2006-03-22 | 本田技研工业株式会社 | Coating system for forming protective layer |
| EP1801843A1 (en) * | 2005-12-22 | 2007-06-27 | Applied Materials GmbH & Co. KG | Arrangement and method for the treatment of substrates |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303062A (en) * | 1987-06-02 | 1988-12-09 | Nec Corp | Apparatus for producing semiconductor integrated circuit |
| US6919001B2 (en) * | 2000-05-01 | 2005-07-19 | Intevac, Inc. | Disk coating system |
| JP2002309372A (en) * | 2001-04-13 | 2002-10-23 | Canon Inc | Inline type film deposition apparatus, film deposition method and liquid crystal element |
| JP2004241319A (en) * | 2003-02-07 | 2004-08-26 | Sony Corp | Film forming device |
| JP4417734B2 (en) * | 2004-01-20 | 2010-02-17 | 株式会社アルバック | In-line vacuum processing equipment |
| US7432201B2 (en) * | 2005-07-19 | 2008-10-07 | Applied Materials, Inc. | Hybrid PVD-CVD system |
| JP4859485B2 (en) * | 2006-02-27 | 2012-01-25 | 三菱重工業株式会社 | Organic semiconductor manufacturing equipment |
| JP2008028036A (en) * | 2006-07-19 | 2008-02-07 | Phyzchemix Corp | Apparatus for manufacturing semiconductor |
-
2009
- 2009-03-16 KR KR1020117000624A patent/KR20110018425A/en not_active Application Discontinuation
- 2009-03-16 JP JP2011512906A patent/JP5657527B2/en not_active Expired - Fee Related
- 2009-03-16 WO PCT/EP2009/053105 patent/WO2010000503A1/en active Application Filing
- 2009-03-16 CN CN2009801216674A patent/CN102057076B/en not_active Expired - Fee Related
- 2009-03-27 TW TW098110209A patent/TWI495753B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1750890A (en) * | 2003-02-21 | 2006-03-22 | 本田技研工业株式会社 | Coating system for forming protective layer |
| EP1801843A1 (en) * | 2005-12-22 | 2007-06-27 | Applied Materials GmbH & Co. KG | Arrangement and method for the treatment of substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110018425A (en) | 2011-02-23 |
| TW200951239A (en) | 2009-12-16 |
| JP5657527B2 (en) | 2015-01-21 |
| JP2011522968A (en) | 2011-08-04 |
| TWI495753B (en) | 2015-08-11 |
| CN102057076A (en) | 2011-05-11 |
| WO2010000503A1 (en) | 2010-01-07 |
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