CN102057074A - Manufacturing method for aluminum-based alloy sputtering target - Google Patents
Manufacturing method for aluminum-based alloy sputtering target Download PDFInfo
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- CN102057074A CN102057074A CN200980121618.0A CN200980121618A CN102057074A CN 102057074 A CN102057074 A CN 102057074A CN 200980121618 A CN200980121618 A CN 200980121618A CN 102057074 A CN102057074 A CN 102057074A
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
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Abstract
Provided is a method whereby it is possible to manufacture, at a high yield, Al-based alloy sputtering targets containing rare-earth elements and high-melting point elements having a higher melting point than Al. The method comprises a step of preparing a first powder of an Al-based alloy which contains rare-earth elements manufactured by an atomization method, a step of mixing the first powder and a second powder comprising at least one type of high-melting point element (X) having a higher melting point than Al, and a step of increasing the density of the powder mixture of the first powder and the second powder. In the mixing step, the maximum particle size (a) of the first powder is 10 to 200 mm; the maximum particle size (b) of the second powder is 10 to 150 mm; and the ratio (a)/(b) of the maximum particle size (a) of the first powder to the maximum particle size (b) of the second powder is 0.5 to 5.
Description
Technical field
The present invention relates to the manufacture method of the Al base alloy sputtering target material of yield rate excellence, and the Al base alloy sputtering target material made from this method.
Background technology
Al base alloy sputtering target material is mainly by manufacturings such as fusion method, spray-up method, powder methods.
The fusion method is the method that molten metal is shaped by mould, can make the alloy sputtering target of various compositions.But, at alloy addition level for a long time, having thick intermetallic compound in the fusion method and crystallize out, it becomes starting point, cracks in casting or plastic working.In addition, use as Ta etc. when comparing fusing point, the high-melting-point that density is high, highdensity element as alloying element, can produce solidifying segregation with Al.Therefore, if contain the Al base alloy sputtering target material of Ta etc. with the fusion manufactured, then yield rate reduces.
Spray-up method is to utilize gas to make molten metal (molten soup) atomizing, makes the build-up of particles that is chilled to half curdled appearance, forms the method for the preform of regulation shape.But, in containing the Al base alloy of the high high-melting-point element of the such fusing point of Ta,, in molten soup geat, can produce and stop up along with temperature reduces.Al-Ta alloy etc. is because molten soup and drop temperature height disperse when piling up so contain the particle of liquid phase in a large number in addition.Consequently yield rate reduces.
With the powder method that the elemental metals powder is mixed with each other, be used to make the Al base alloy of making inconvenient composition with the fusion method more.But, the easy oxidation of the metal-powder of rare earth element simple substance, so powder method is difficult to be applicable to the manufacturing of the Al base alloy sputtering target material that contains rare earth element.
On the other hand, in patent documentation 1 and patent documentation 2, disclose a kind of method that fusion method and powder method are made sputtering target material that makes up.Wherein disclosed method is in patent documentation 1, and at first (1) passes through inert gas atomizer manufactured Ge-Te powdered alloy and Sb-Te powdered alloy, and secondly (2) make Ge-Sb-Te base sputtering target material with above-mentioned two kinds of powdered alloys mixing, sintering.Disclosed method is in patent documentation 2 in addition, to mix by the solid alloy powder of quench solidification manufactured and the metal-powder of Pt simple substance, (hot isostatic pressing: Hot Isostatic Pressing) processing makes this mixed powder densification, thereby makes sputtering target material through HIP.
Patent documentation 1: No. 3703648 communique of Japanese Patent
Patent documentation 2: TOHKEMY 2006-144124 communique
Summary of the invention
The objective of the invention is to, a kind of method that can contain the Al base alloy sputtering target material of rare earth element and the fusing point high-melting-point element higher than Al with the high rate of finished products manufacturing is provided.
Main idea of the present invention is as follows.
[1] a kind of method that contains the Al base alloy sputtering target material of rare earth element and the fusing point high-melting-point element X higher than Al wherein, comprises following operation:
Preparation is by the operation of first powder of the Al base alloy that contains rare earth element (being designated hereinafter simply as " REM ") of atomization manufacturing;
Above-mentioned first powder and second powder that contains more than one above-mentioned high-melting-point element X are carried out the blended operation; And
Make the operation of the mixed powder densification of above-mentioned first powder and above-mentioned second powder,
In above-mentioned mixed processes, the maximum particle diameter of above-mentioned first powder (a) is 10～200 μ m, the maximum particle diameter of above-mentioned second powder (b) is 10～150 μ m, and the ratio (a)/(b) of the maximum particle diameter (b) of maximum particle diameter of above-mentioned first powder (a) and above-mentioned second powder is 0.5～5.
Also have, above-mentioned second powder preferably is made of more than one above-mentioned high-melting-point element X.
[2] according to [1] described manufacture method, above-mentioned rare earth element is at least a among Nd and the Y.
[3] according to [1] or [2] described manufacture method, above-mentioned high-melting-point element X is at least a element of selecting among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Ni.
[4], be the method for making the Al base alloy sputtering target material that to contain above-mentioned rare earth element be 1.0～10 atom %, contain above-mentioned high-melting-point element X is 0.5～5 atom % according to each described manufacture method in [1]～[3].
[5] a kind of Al base alloy by each described manufacture method manufacturing in [1]～[4] spatters target.
According to the present invention, will be that Al base alloy (is designated hereinafter simply as " Al-REM alloy " by the Al-REM of atomization manufacturing.) first powder and by the fusing point high-melting-point element higher (situation of following useful X representative than Al.) when second powder that constitutes was mixed, by their maximum particle diameter of suitable control and ratio, can high rate of finished products ground making Al-REM-X be that Al base alloy (is designated hereinafter simply as " Al-REM-X alloy ".) sputtering target material.
Embodiment
The inventor for provide a kind of can not produce segregation and can high rate of finished products ground make the method for the Al-REM-X alloy sputtering target of the rare earth element (REM) that contains easy oxidation and the fusing point high-melting-point element (X) higher than Al, study repeatedly.It found that, when second powder of first powder that mixes the Al-REM alloy and high-melting-point element X, if suitably control the maximum particle diameter (a) of above-mentioned first powder and the maximum particle diameter (b) of above-mentioned second powder, and their ratio ((a)/(b)), just can reach its intended purposes, thereby finish the present invention.In detail, if adopt method of the present invention, then when the mixing of powder, vibration segregation, the rolling segregation of (when particularly the compression handled of HIP is filled) are prevented during the carrying of mixed powder and during densification, the yield rate of sputtering target material improves as can be known.
Manufacture method of the present invention comprises following operation:
(1) preparation is by the operation of first powder of the Al-REM alloy of atomization manufacturing;
(2) above-mentioned first powder and second powder that is made of the fusing point high-melting-point element X higher than Al are carried out the blended operation; And
(3) make the operation of the mixed powder densification of above-mentioned first powder and above-mentioned second powder.In addition also can be as required, the DB that is obtained by above-mentioned engineering (3) is implemented plastic working (forge, rolling, extrusion processing etc.), machined into, Milling Process etc.
Below, in order above-mentioned operation (1)～(3) are elaborated.
[operation (1)]
In operation (1), be first powder of preparing by the Al-REM alloy of atomization manufacturing.In manufacture method of the present invention, be not to use the metal-powder of REM simple substance, and be to use Al-REM powdered alloy (first powder), therefore can prevent the oxidation of REM.
The atomization that is used to make first powder is not particularly limited, can uses known atomization in the Al alloy field (for example aerosolization method, water atomization, centrifugal force atomization etc.).According to atomization, have the advantages such as size-grade distribution of the powder of easy control manufacturing.
[operation (2)]
Then, describe for the operation (2) of the feature of rich method of the present invention.
In operation (2), second powder that mixes above-mentioned AL-REM powdered alloy (first powder) and constituted by the fusing point high-melting-point element (X) higher than Al.So, can make the Al-REM-X alloy sputtering target in high rate of finished products ground by after having made the Al-REM powdered alloy, adding high-melting-point element (X) again.
Above-mentioned high-melting-point element X is the fusing point element higher than Al, specifically can enumerate the 4th～6 family's element and the Ni of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W.These high-melting-point elements can only contain a kind of, also can contain two or more.Though just be elaborated after a while, but the Al base alloy sputtering target material that contains these elements and rare earth element, be specially adapted to the manufacturing of the Al base alloy reflective film etc. of optical information recording medium, and known above-mentioned high-melting-point element helps the reduction of the thermal conductivity of Al base alloy, the raising of erosion resistance etc.That is, the alloy composition and the content thereof of the Al base alloy sputtering target material that is obtained by method of the present invention suit to determine according to the relation of the purposes of the Al alloy film that uses this sputtering target material to obtain, characteristic etc.The details aftermentioned.
By second powder that above-mentioned high-melting-point element constitutes, no matter be the elemental metals powder that has only a kind of high-melting-point element, the powdered alloy that still contains two or more high-melting-point elements can.In addition, also can and use the different second two or more powder of composition.
In manufacture method of the present invention, second manufacturing method of power is not particularly limited, can make by any one method among mechanical crushing method, chemical reaction method, electrolysis liberation method, the atomization.For example second powder can be made as follows: the elemental metals of melting high-melting-point element X, after solidifying with mold, carry out mechanical pulverizing.
The significant feature that has among the present invention is being in the mixed processes of above-mentioned operation (2), suitably to control maximum particle diameter (a) and the maximum particle diameter (b) of second powder and their ratio (a)/(b) of first powder.Specifically, be that the maximum particle diameter (a) that makes first powder is 10～200 μ m, the maximum particle diameter of above-mentioned second powder (b) is 10～150 μ m, and the ratio (a)/(b) of the maximum particle diameter (b) of the maximum particle diameter of first powder (a) and second powder is 0.5～5 to mix.As described later shown in the embodiment, by suitable control maximum particle diameter and ratio thereof, vibration segregation, the rolling segregation of (when particularly the compression handled of HIP is filled) are prevented during the mixing of powder, during the carrying of mixed powder and during the densification in the operation (3), so the yield rate of sputtering target material improves.
At this, the maximum particle diameter of so-called powder is meant the size-grade distribution of measuring powder based on the Fraunhofer method of optical diffraction, scattering, and when the concerning of clear and definite particle diameter and frequency, the frequency of particle diameter side eliminates 3.0% the maximum value of particle diameter when following greatly.In the present embodiment, size distribution and maximum particle diameter utilize the particle-size analyzer " day machine dress (strain) MICROTRAC HRA (MODEL:9320-X100) " of laser diffraction, diffuse transmission type to measure.
At first, the maximum particle diameter (a) of first powder (Al-REM powdered alloy) is 10 μ m above (being preferably more than the 50 μ m), 200 μ m following (it is following to be preferably 150 μ m).If the maximum particle diameter (a) of first powder surpasses 200 μ m, then second powder moves between first powder easily, and segregation takes place during mixing, during carrying, during densification easily.Also have, the lower limit set of the maximum particle diameter of first powder is in can practical scope.
In addition, the maximum particle diameter (b) of second powder (the metal or alloy powder of other elements X) is 10 μ m above (being preferably more than the 30 μ m), 150 μ m following (be preferably below the 100 μ m, more preferably 45 μ m are following).If the maximum particle diameter (b) of second powder surpasses 150 μ m, then the mixedness in the operation (2) reduces, and segregation takes place easily.Also have, the lower limit set of the maximum particle diameter of second powder is in can practical scope.
In addition, the ratio (a)/(b) of the maximum particle diameter of first powder and second powder be (be preferably more than 0.7, more preferably more than 2) more than 0.5, (be preferably below 4.5, more preferably below 2) below 5.If the ratio (a)/(b) of the maximum particle diameter of first powder and second powder surpasses 5, then second powder moves between first powder easily, and segregation takes place during mixing, during carrying, during densification easily.On the other hand, if the ratio (a)/(b) of the maximum particle diameter of first powder and second powder is lower than 0.5, when then particularly using second powder that the big X element of density constituted, powder is difficult to move, and the mixedness in the operation (2) reduces, and segregation takes place easily.
The ratio (a)/(b) of the maximum particle diameter (a) of the first above-mentioned powder, the maximum particle diameter (b) of second powder and first powder and the maximum particle diameter of second powder, can be by first powder and second powder to making by atomization etc., carry out for example classification (screening) etc. before and be controlled at above-mentioned scope in for example operation (2).
Mixing means to the operation of mixing the first above-mentioned powder and second powder is not particularly limited, and can use known method, for example V-Mixer etc.
[operation (3)]
Make the mixed powder densification that obtains through above-mentioned operation (2) with operation (3), can make Al base alloy sputtering target material (DB) thus.Also have, also can implement further processing (for example plastic working, machined into, Milling Process etc.) to the DB that obtains by operation (3) as required, further give shape.
Densification means to mixed powder are not particularly limited, but preferably can access the HIP processing of the DB of homogeneous.HIP handles preferably for example more than the 80MPa, more preferably under the pressure more than the 85MPa, with 400～600 ℃, more preferably carry out with 500～570 ℃ temperature.The time that HIP handles is preferably in roughly 1～10 hour, more preferably 1.5～5 hours the scope.
Also have, also can use HIP to handle densification means in addition, for example also can carry out the densification of mixed powder together with plastic working by extrusion processing.
The above-mentioned plastic working of carrying out as required, machined into, Milling Process etc. are not particularly limited, and can adopt well-known means.
Method of the present invention is applicable to Al-{ rare earth element (REM) }-manufacturing of { element that fusing point is higher than Al (X) } alloy sputtering target.At this, can enumerate lanthanon (from 15 kinds of elements of La to Lu) and Sc (scandium) and Y (yttrium) among the REM.Be preferably Nd and/or Y.High-melting-point element X such as above-mentioned.
The sputtering target material that the method according to this invention obtains is specially adapted to the manufacturing that optical information record is employed Al base alloy reflective film.Above-mentioned reflectance coating for example has detailed record in TOHKEMY 2005-158236 communique.Write up is in the above-mentioned communique, containing REM (being preferably Nd and/or Y) is 1.0～10.0 atom %, with among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Ni, select at least a be the Al base alloy reflective film of 0.5～5 atom %, has the excellent like this characteristic of low-thermal conductivity, low melting glass, high corrosion resistance and high-reflectivity, be applicable to the optical information recording medium that carries out mark with laser etc., such Al base alloy reflective film can use the sputtering target material of same composition to form.
About the reflectance coating that above-mentioned communique is recorded and narrated, more detailed description is as follows.At first, contain REM by making Al base alloy, thereby can reduce its thermal conductivity greatly.Among the REM, the thermal conductivity of Nd and Y reduces effect also clearly.The preferable range of REM amount be 1.0 atom % above, below the 10 atom %, more preferably 2.0 atom % above, below the 7 atom %.
In the Al-REM alloy, also contain at least a among Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and the Ni, erosion resistance improves thus.In addition, the 4th～6 family's element and Ni can reduce the thermal conductivity of Al base alloy.Among these elements, the erosion resistance of Ti, Hf, Ta and Cr is improved effect also clearly.Their preferred content be 0.5 atom % above, below the 5 atom %, more preferably 1.0 atoms above, below the 3.0 atom %.
Therefore, when the sputtering target material that the method according to this invention is obtained is used for the film forming of above-mentioned reflectance coating, according to making it the mode identical with the composition of above-mentioned reflectance coating, the Al base alloy that this sputtering target material is become contain following composition get final product: promptly contain REM (preferred Nd and/or Y) and be 1.0～10 atom % (more preferably 2.0 atom % above, below the 7 atom %); At least a high-melting-point element of selecting in the group that constitutes from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Ni (improving the viewpoint of effect, the preferably group that is made of Ti, Hf, Ta and Cr from erosion resistance) is 0.5～5 atom % (more preferably 1.0 atom % is above, 3.0 atom % are following).
When making the sputtering target material of above-mentioned composition, in above-mentioned operation (1), use contains first powder that REM is the Al-REM alloy about 1.0～10 atom %, and in above-mentioned operation (2), second powder that to use above-mentioned high-melting-point element X be the amount of 0.5～5.0 atom % gets final product.
Also have, be preferred mode above-mentioned the forming of sputtering target material that is obtained by method of the present invention of enumerating, and unqualified in this intention.The present invention discloses a kind of method, can high rate of finished products ground make the Al-REM-X alloy sputtering target that contains rare earth element (REM) and the fusing point high-melting-point element (X) higher than Al, it is formed, content suitably determines according to purposes, the characteristic of the resulting reflectance coating of this sputtering target material of use etc.Therefore, when making the reflectance coating different with the described composition of above-mentioned communique, make corresponding the getting final product of composition of the composition of the sputtering target material reflectance coating different with this, such sputtering target is also contained in the scope of the present invention.
Embodiment
Below, enumerate embodiment and be described more specifically the present invention, but the present invention is not limited by the following examples, as long as certainly suitably changed enforcement in the scope that can meet above-mentioned, following aim, these all are included in the technical scope of the present invention.
Embodiment 1
Make Al-6 atom %Nd-1 atom %Ta alloy sputtering target with the whole bag of tricks, estimate yield rate.
At first, with nitrogen atomization manufactured Al-6 atom %Nd powdered alloy (first powder).In this first powder, be that the amount of 1 atom % is added second powder, mix with V-Mixer with Ta.The maximum particle diameter (b) of the maximum particle diameter (a) of first powder and second powder is shown in following table 1 in addition, and maximum particle diameter is regulated with sieve.Also have, the measurement of maximum particle diameter is measured with aforesaid method.
Secondly, this mixed powder is filled in the compressed pipe, outgases, enclose., with the condition of top temperature 550 ℃, maintenance 2 hour, pressure 85MPa carry out HIP handle, make Al-6 atom %Nd-1 atom %Ta alloy sputtering target thereafter.
In order to compare, use the fusion method and the spray-up method of the following stated, make Al-6 atom %Nd-1 atom %Ta alloy sputtering target.
Fusion method such as following mode are carried out.Use the vacuum induction smelting furnace, use the refractory body crucible of aluminum oxide, spinel etc., under 1350 ℃ of melting temperature (Tm)s, rare gas element (Ar) atmosphere, fuse, in Copper casting mould or cast iron casting mould (210mm * 210mm * high 50mm), cast.(after 5～10mm), cut into thickness 10mm (products thickness 5mm+5mm), make Al-6 atom %Nd-1 atom %Ta alloy sputtering targets in the bottom of having cut away resulting ingot bar by machined into.
Spray-up method carries out as follows.Use reaction-injection moulding device (Sumitomo heavy-duty machine tool industry (strain) system),, make drop, make it to be deposited on the collector by nitrogen atomization to go out the condition of 1300 ℃ of soup temperature, molten soup geat internal diameter φ 5.5mm.After resulting preform put into compressed pipe and outgas, enclose, implement HIP with 550 ℃ of temperature, pressure 85MPa, the condition of 2 hours hold-times and handle.To resulting DB implement to forge, rolling after, cut into thickness 10mm (products thickness 5mm+5mm), made Al-6 atom %Nd-1 atom %Ta alloy sputtering target by machined into.
The goods yield rate of the sputtering target material that so obtains is estimated with product weight/fusion weight.
These results are presented in the table 1.Follow general benchmark, yield rate is lower than 40% be evaluated as defective (B) at being evaluated as more than 40% qualified (A).Also have, in the yield rate loss, except the loss that produces because of segregation, the loss that produces when also comprising, during mechanical workout because of plastic working.
[table 1]
As shown in Table 1, the ratio (a)/(b) of the maximum particle diameter (a) of first powder when mixing, the maximum particle diameter (b) of second powder and first powder and the maximum particle diameter of second powder satisfies the No.3,4,6,9 and 10 of method manufacturing of the important document of the present invention's regulation, and the goods yield rate all improves.
With respect to this, the No.5,7 and 8 of certain discontented unabridged version scope of invention of the above-mentioned important document of the present invention's regulation, the goods yield rate all reduces.In addition, as the fusion method (No.1) and the spray-up method (No.2) of existing method, the goods yield rate that can not get expecting.
In detail the present invention has been described, but only otherwise breaking away from the spirit and scope of the present invention just can carry out various changes and correction, this point practitioner is clearly with reference to specific embodiment.
The application is based on the Japanese patent application of on June 9th, 2008 application (special be willing to 2008-150527), its content this as with reference to and quote.
Utilizability on the industry
According to the present invention, to be by the Al-REM of atomization manufacturing first powder of Al base alloy and when being mixed by second powder that the fusing point high-melting-point element higher than Al consists of, by their maximum particle diameter of suitable control and ratio, can manufacturing Al-REM-X in high finished product rate ground be Al base alloy sputtering target material.
Claims (5)
1. the manufacture method of an Al base alloy sputtering target material, described Al base alloy sputtering target material contains rare earth element and the fusing point high-melting-point element X higher than Al, it is characterized in that, comprises following operation:
Preparation by the operation of first powder of the Al base alloy that contains rare earth element of atomization manufacturing,
With described first powder and second powder that contains more than one described high-melting-point element X carry out the blended operation and
Make the operation of the mixed powder densification of described first powder and described second powder,
In described mixed processes, the maximum particle diameter a of described first powder is 10～200 μ m, and the maximum particle diameter b of described second powder is 10～150 μ m, and the ratio a/b of the maximum particle diameter b of the maximum particle diameter a of described first powder and described second powder is 0.5～5.
2. manufacture method according to claim 1, wherein, described rare earth element is at least a among Nd and the Y.
3. manufacture method according to claim 1, wherein, described high-melting-point element X is at least a element of selecting from the group that Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and Ni constitute.
4. manufacture method according to claim 1, the method for the Al base alloy sputtering target material that wherein, it is 1.0～10 atom % that manufacturing contains described rare earth element, contain described high-melting-point element X is 0.5～5 atom %.
5. the Al base alloy by each described manufacture method manufacturing in the claim 1～4 spatters target.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008150527A JP5342810B2 (en) | 2008-06-09 | 2008-06-09 | Method for producing Al-based alloy sputtering target material |
| JP2008-150527 | 2008-06-09 | ||
| PCT/JP2009/060476 WO2009151032A1 (en) | 2008-06-09 | 2009-06-08 | Manufacturing method for aluminum-based alloy sputtering target |
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|---|---|
| CN102057074A true CN102057074A (en) | 2011-05-11 |
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| CN200980121618.0A Pending CN102057074A (en) | 2008-06-09 | 2009-06-08 | Manufacturing method for aluminum-based alloy sputtering target |
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|---|---|
| JP (1) | JP5342810B2 (en) |
| CN (1) | CN102057074A (en) |
| TW (1) | TWI431140B (en) |
| WO (1) | WO2009151032A1 (en) |
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| AT14576U1 (en) * | 2014-08-20 | 2016-01-15 | Plansee Se | Metallization for a thin film device, method of making the same and sputtering target |
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| CN111155063B (en) * | 2019-12-31 | 2022-03-08 | 广州市尤特新材料有限公司 | Titanium-aluminum alloy target material and preparation method thereof |
| CN114535576B (en) * | 2022-04-01 | 2023-05-02 | 中南大学 | High-entropy alloy refractory to Al and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3212024B2 (en) * | 1996-11-14 | 2001-09-25 | 日立金属株式会社 | Target material for Al-based sputtering and method for producing the same |
| JPH10147860A (en) * | 1996-11-15 | 1998-06-02 | Hitachi Metals Ltd | Al-based sputtering target material and its production |
| JPH1143765A (en) * | 1997-07-22 | 1999-02-16 | Hitachi Metals Ltd | Aluminum alloy target and its production |
| JPH11140636A (en) * | 1997-11-11 | 1999-05-25 | Daido Steel Co Ltd | Method for mixing multicomponent powder, and production of sintered target of multicomponent powder |
| JPH11293454A (en) * | 1998-04-14 | 1999-10-26 | Hitachi Metals Ltd | Target material for aluminum series sputtering and its production |
| US20040144204A1 (en) * | 2002-06-24 | 2004-07-29 | Akira Hisano | Airu spattering target and method for preparation thereof |
| JP4377906B2 (en) * | 2006-11-20 | 2009-12-02 | 株式会社コベルコ科研 | Al-Ni-La-based Al-based alloy sputtering target and method for producing the same |
-
2008
- 2008-06-09 JP JP2008150527A patent/JP5342810B2/en active Active
-
2009
- 2009-06-08 WO PCT/JP2009/060476 patent/WO2009151032A1/en active Application Filing
- 2009-06-08 CN CN200980121618.0A patent/CN102057074A/en active Pending
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| CN102400082A (en) * | 2011-11-15 | 2012-04-04 | 燕山大学 | Magnesium alloy surface conduction anticorrosive paint and preparation method thereof |
| CN105624619A (en) * | 2016-03-14 | 2016-06-01 | 无锡舒玛天科新能源技术有限公司 | Preparation method of rotary sputtering aluminum rare-earth alloy target for touch screen of flat panel display and target prepared by using preparation method |
| CN105624619B (en) * | 2016-03-14 | 2018-06-19 | 无锡舒玛天科新能源技术有限公司 | A kind of preparation method of flat-panel monitor touch screen Al rare earth alloy rotatable sputtering target and its prepare target |
| CN113373414A (en) * | 2020-02-25 | 2021-09-10 | 湖南东方钪业股份有限公司 | Preparation method and application of aluminum-scandium alloy sputtering target |
| CN113373414B (en) * | 2020-02-25 | 2023-10-27 | 湖南东方钪业股份有限公司 | Preparation method and application of aluminum scandium alloy sputtering target |
| CN115058694A (en) * | 2022-06-22 | 2022-09-16 | 苏州六九新材料科技有限公司 | TiAlZr target material and preparation method thereof |
| CN115058694B (en) * | 2022-06-22 | 2024-03-22 | 苏州六九新材料科技有限公司 | TiAlZr target and preparation method thereof |
| CN116904942A (en) * | 2023-08-01 | 2023-10-20 | 苏州六九新材料科技有限公司 | Aluminum-based alloy target and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI431140B (en) | 2014-03-21 |
| JP2009293108A (en) | 2009-12-17 |
| WO2009151032A1 (en) | 2009-12-17 |
| JP5342810B2 (en) | 2013-11-13 |
| TW201011116A (en) | 2010-03-16 |
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