CN102054932B - Thermoradiation structure and manufacturing method thereof - Google Patents
Thermoradiation structure and manufacturing method thereof Download PDFInfo
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- CN102054932B CN102054932B CN 201010124695 CN201010124695A CN102054932B CN 102054932 B CN102054932 B CN 102054932B CN 201010124695 CN201010124695 CN 201010124695 CN 201010124695 A CN201010124695 A CN 201010124695A CN 102054932 B CN102054932 B CN 102054932B
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- oxide film
- metallic substrates
- front surface
- metal oxide
- thermal radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Abstract
The invention provides a thermoradiation structure and a manufacturing method thereof, wherein the thermoradiation structure comprises a metal substrate, an oxide film pattern, an adhesive film and a metal pattern formed on the adhesive film. The metal substrate is equipped with a front surface facing a light emitting device, a rear surface opposite to the front surface and a side surface connecting the front surface with the rear surface. The oxide film pattern covers the front surface of the metal substrate and the adhesive film covers the oxide film pattern.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS
The application requires the priority of 10-2009-0103320 number the korean patent application of submission on October 29th, 2009 to Korea S Department of Intellectual Property, and its full content is incorporated into this by quoting as proof.
Technical field
The present invention relates to a kind of thermal radiation arrangement, more specifically, relate to a kind of thermal radiation arrangement that improves radiation efficiency, and for the manufacture of the method for this thermal radiation arrangement.
Background technology
Usually, light emitting device package is to form by the luminescent device that encapsulates such as light-emitting diode (LED) and generating laser, to provide luminescent device in home appliance, remote controller, electronic display, indicating device, automation equipment and lighting apparatus etc.Recently, because luminescent device has been applied to every field, the encapsulation technology that the luminescent device duration of work is effectively processed by the heat of luminescent device generation has become necessary.Particularly, be applied in the situation of lighting apparatus at height output LED because along with the increase of power consumption can produce high warm, so need to improve the radiation efficiency of luminescent device.At present, the thermal radiation of LED is processed, and is by being finished by the heat that LED produces to extraneous radiation in order to the ceramic bases that LED is installed.But, in this case, because the ceramic bases fancy price has increased the cost that light-emitting component encapsulates.In addition, ceramic bases has relatively low thermal endurance and resistance to wear, and this also becomes a problem.
Summary of the invention
For addressing the above problem the present invention has been proposed.Therefore, an object of the present invention is to provide a kind of thermal radiation arrangement with radiation efficiency of raising.
In addition, another object of the present invention provides the method for thermal radiation arrangement that a kind of manufacturing has the radiation efficiency of raising.
For achieving the above object, according to an aspect of the present invention, the invention provides a kind of thermal radiation arrangement, comprising: metallic substrates has the front surface in the face of luminescent device, the rear surface relative with front surface and the side surface that connects front surface and rear surface; Oxide film pattern, the front surface of covering metal substrate; Tacky film, the capping oxidation film figure; And metal pattern, be formed on the tacky film.
According to embodiments of the invention, metallic substrates can be made by aluminum, and oxide film pattern can comprise pellumina.
According to embodiments of the invention, metal pattern can be made by copper (Cu) material, and can comprise the circuit that is electrically connected to luminescent device.
According to embodiments of the invention, oxide film pattern can form by metallic substrates is carried out anodic oxidation.
For achieving the above object, according to a further aspect in the invention, the invention provides a kind of method of making this thermal radiation arrangement, may further comprise the steps: preparation metallic substrates, this metallic substrates have the front surface in the face of luminescent device, the rear surface relative with front surface and the side surface that connects front surface and rear surface; Form metal oxide film, the front surface of covering metal substrate, rear surface and side surface; Form tacky film, cover the metal oxide film that is formed on the front surface; And form metal pattern in tacky film; The metal oxide film that removal forms at rear surface and side surface.
According to embodiments of the invention, the step of preparation metallic substrates can comprise the step for preparing aluminium sheet, and the step that forms metal oxide film can comprise carries out anodised step to aluminium sheet.
According to embodiments of the invention, remove the step that is formed on the metal oxide film on rear surface and the side surface and can be included in the step of carrying out the layering processing on the generating structure that wherein is formed with metal oxide film.
According to embodiments of the invention, the step that forms metal pattern can comprise: lamination Copper Foil on tacky film; And before the step of removing metal oxide film, Copper Foil is carried out etch processes.
Description of drawings
In conjunction with the drawings embodiment is carried out following description, these and/or other aspect and the advantage thereof of the inventive concept that the present invention is total will become apparent and be more readily understood:
Fig. 1 is the diagram according to the thermal radiation arrangement of the embodiment of the invention;
Fig. 2 is that making is according to the flow chart of the method for the thermal radiation arrangement of the embodiment of the invention;
Fig. 3 a to Fig. 3 d is that description is according to the diagram of the manufacturing process of the thermal radiation arrangement of the embodiment of the invention;
Fig. 4 shows the diagram that has according to the light emitting device package of the thermal radiation arrangement of the embodiment of the invention.
Embodiment
With reference to the following embodiment that is described with reference to the accompanying drawings, advantage and disadvantage of the present invention and realize that the method for these advantage and disadvantages can become apparent.Yet, the invention is not restricted to following embodiment, and can realize with other various forms.These embodiment are of the present invention open in order to finish, and fully inform those of ordinary skill in the art's technical scope of the present invention.In whole specification, identical reference marker represents identical element.
The term that uses in this specification only is used for describing these embodiment, rather than in order to limit the present invention.In this manual, as long as be not that statement is arranged in addition in the associated description, singulative includes plural form.Term " comprises (comprise) " and/or does not get rid of " comprising (comprising) " existence or the increase of one or more different assembly, step, operation and/or elements.
Hereinafter, describe with reference to the accompanying drawings according to an embodiment of the invention thermal radiation arrangement in detail.
Fig. 1 is the diagram according to the thermal radiation arrangement of the embodiment of the invention.With reference to Fig. 1, comprise according to the thermal radiation arrangement 110 of the embodiment of the invention: metallic substrates 112, tacky film 114 and metal pattern 116a.This metallic substrates 112 has front surface 112a, the rear surface 112b relative with front surface 112a and the side surface 112c that connects front surface 112a and rear surface 112b.Be connected at thermal radiation arrangement 110 in the situation of luminescent device structure (not shown), front surface 112a is the surface in the face of the luminescent device structure.Metallic substrates 112 is plates of being made by the metal material with high-termal conductivity.For example, metallic substrates 112 can be aluminium (Al) substrate.In addition, metallic substrates 112 comprises oxide film pattern 113a.This oxide film pattern 113a only is formed on the front surface 112a of metallic substrates 112.Oxide film pattern 113a forms by metallic substrates 112 is carried out anodic oxidation.Therefore, be in the situation of aluminium sheet in metallic substrates 112, oxide film pattern 113a can be Al
2O
3Film.
Meanwhile, although in the example that present embodiment is described, oxide film pattern 113a only forms at the front surface 112a of metallic substrates 112, and the part that forms oxide film pattern 113a in the metallic substrates 112 also can be carried out different changes and change.For example, can form the oxide film pattern 113a of metallic substrates 112 to cover at least one among rear surface 112b and side surface 112c and the front surface 112a.
Fig. 2 is the flow chart according to the manufacture method of the thermal radiation arrangement of the embodiment of the invention, and Fig. 3 a to Fig. 3 d is the diagram of description according to the manufacture process of the thermal radiation arrangement of the embodiment of the invention.
With reference to Fig. 2 and Fig. 3 a, preparation metallic substrates 112 (S110).For example, the step of preparation metallic substrates 112 can comprise the step for preparing aluminium substrate, and this aluminium substrate has front surface 112a, the rear surface 112b relative with front surface 112a and the side surface 112c that connects front surface 112a and rear surface 112b.
Form metal oxide film 113 with all surface 112a, 112b and the 112c (S120) of covering metal substrate 112.For example, the step that forms metal oxide film 113 is finished by metallic substrates 112 is carried out anodic oxidation.Anodic oxidation is one of electrochemistry burning method, and its surface in metallic substrates 112 forms stable oxide-film.Be in the situation of aluminium substrate in metallic substrates 112, metal oxide film 113 (for pellumina) forms by anodic oxidation, is used for front surface 112a, rear surface 112b and the side surface 112c of covering metal substrate 112.Metal oxide film 113 prevents the corrosion of metallic substrates 112, and improves resistance to wear, thermal endurance and the adhesiveness of metallic substrates 112.
With reference to Fig. 2 and Fig. 3 b, on metallic substrates 112, form in turn tacky film 114 and metal film 116 (S130).For example, the front surface 112a in metallic substrates 112 forms the tacky film 114 with high-termal conductivity.The fluororesin adhesive such as special teflon, can be used as tacky film 114.And, form metal film 116 in tacky film 114.For example, the step that forms metal film 116 can be finished by the Copper Foil of lamination cupric (Cu) on tacky film 114.In the process of adhesion metal film 116 on tacky film 114, can apply predetermined pressure and prevent that metal film 116 from separating with tacky film 114.
With reference to Fig. 2 and Fig. 3 c, form metal pattern 116a (S140) in metallic substrates 112.For example, the step that forms metal pattern 116a can be scheduled to etch processes by the metal film 116 in Fig. 3 b and be carried out.As an example, etch processes can comprise the photoresist etch processes.As another example, etch processes can comprise the processing of metal film 116 being processed with laser or drill bit.The metal pattern 116a that makes by said method is used as the circuit line, with to luminescent device (not shown) transmission of electric signals, and as heat conductor, with the heat that is produced by luminescent device to metallic substrates 112 conduction.
Meanwhile, in the process that forms metal pattern 116a, metal oxide film 113 can prevent the damage to metallic substrates 112.More particularly, when the method for use such as photoresist etch processes forms metal pattern 116a, because metallic substrates 112 is subject to the impact of etch processes, can produce such as corroding and unnecessary etched damage in metallic substrates 112.In order to prevent this damage, rear surface 112b and side surface 112c and front surface 112a that metal oxide film 113 has covered metallic substrates 112 protect metallic substrates 112 to avoid the etching and processing environment, thereby prevent the damage of metallic substrates 112 in etch processes.
With reference to Fig. 2 and Fig. 3 d, the surperficial 112b in the removal metallic substrates 112 except front surface 112a and the metal oxide film 113 (S150) among Fig. 3 c on the 112c.For example, the step of removal metal oxide film 113 is to process to finish by being scheduled to layering at the generating structure that is formed with metal pattern 116a.At this moment, tacky film 114 and metal pattern 116a have prevented coming off of the upper metal oxide film 113 that forms of metallic substrates 112 front surface 112a.The metal oxide film 113 that forms at the rear surface of metallic substrates 112 112b and side surface 112c is come off.Finally, process by layering, formed the oxide film pattern 113a that only covers front surface 112a in metallic substrates 112.
Meanwhile, although in the example that present embodiment is described, removed the metal oxide film of covering metal substrate 112 rear surface 112b and side surface 112c, can carry out different changes and change from its part of removing metal oxide film 113.In addition, the manufacturing of the thermal radiation arrangement shown in Fig. 1 110 can be finished in the situation of the processing of not removing metal oxide film 113.In this case, final thermal radiation arrangement 110 can have all front surface 112a, the rear surface 112b of covering metal substrate 112 and the metal oxide film 113 of side surface 112c.
In addition, according to embodiments of the invention, owing to form the etch processes of metal pattern 116a in metallic substrates 112, under the state with metal oxide film 113 covering metal substrates 112 all surface 112a, 112b, 112c, to carry out, so in the process that forms metal pattern 116a, metallic substrates 112 and the isolation of etch processes environment facies.Therefore, prevented in the process that forms metal pattern 116a damage to metallic substrates 112 according to the manufacture method of thermal radiation arrangement of the present invention.
Hereinafter, will the example of light emitting device package 100 with thermal radiation arrangement 110 according to the abovementioned embodiments of the present invention be described.At this, being repeated in this description of above-mentioned thermal radiation arrangement 110 will be omitted or simplify.
Fig. 4 shows the diagram that has according to the light emitting device package of the thermal radiation arrangement of the embodiment of the invention.With reference to Fig. 4, light emitting device package 100 is to make by being connected with the luminescent device structure 120 of being scheduled to above with reference to the thermal radiation arrangement 110 that Fig. 1 describes.Herein, luminescent device structure 120 is connected on the metal pattern 116a that is formed on the metallic substrates 112 front surface 112a.This luminescent device structure 120 comprises: luminescent device 122, lead frame 124 and molded film 126.Luminescent device 122 is at least one in light-emitting diode or the laser diode.As an example, this luminescent device 122 can be light-emitting diode.Lead frame 124 is electrically connected to luminescent device 122 and metal pattern 116a.This lead frame 124 is transmission of electric signals between luminescent device 122 and metal pattern 116a.And molded film 126 covers on the luminescent device 122 isolated with external environment condition with protection luminescent device 122.
Light emitting device package 100 has such structure, and the heat H that produces from luminescent device 122 in this structure is transferred on the metallic substrates 112 by the metal pattern 116a of thermal radiation arrangement 110, then is radiated the external world from metallic substrates 112.Therefore, has the radiation efficiency that has raising according to the light emitting device package 100 of the thermal radiation arrangement 110 of the embodiment of the invention.
Thermal radiation arrangement according to the embodiment of the invention comprises: metallic substrates, the oxide film pattern with high-termal conductivity, tacky film and metal pattern, and be stacked in turn on the front surface of metallic substrates.When the thermal radiation arrangement of this structure is connected with the luminescent device structure, this thermal radiation arrangement effectively radiation by the heat of luminescent device structure generation, thereby have the radiation efficiency of raising.
The method of this thermal radiation arrangement constructed in accordance, the thermal radiation arrangement that produces comprise metallic substrates, have the oxide film pattern of high-termal conductivity, tacky film and metal pattern, and are stacked in turn the front surface of metallic substrates.When the thermal radiation arrangement of this structure is connected with the luminescent device structure, this thermal radiation arrangement effectively radiation by the heat of luminescent device structure generation.Therefore, the method for this thermal radiation arrangement constructed in accordance can produce the thermal radiation arrangement of the radiation efficiency with raising.
The method of this thermal radiation arrangement constructed in accordance under the state with metal oxide film protection metallic substrates, prevents the damage that in the process of formation metal pattern metallic substrates is caused by forming metal pattern in metallic substrates.
The present invention has been explained in above-mentioned explanation for example.In addition, above-mentioned explanation only illustrates and has explained the preferred embodiments of the present invention, but it should be understood that, the present invention can be used in various other combinations, modification and environment, and can proportionately carry out changes and improvements with experience or the knowledge of above-mentioned instruction and/or correlation technique in inventive concept scope described herein.Above-described embodiment is intended to further explain implements optimal mode of the present invention, and makes other one of ordinary skill in the art can be according to this embodiment or other embodiment, and utilizes the present invention according to special applications of the present invention or with desired various changes.Therefore, above-mentioned explanation is not for the present invention being limited to form disclosed herein.And claims should be understood to include other replaceabilities embodiment.
Claims (3)
1. method for the manufacture of thermal radiation arrangement, described thermal radiation arrangement are used for radiation by the heat that luminescent device produces, and said method comprising the steps of:
The preparation metallic substrates, described metallic substrates has front surface, the rear surface relative with described front surface and the side surface that connects described front surface and described rear surface in the face of described luminescent device;
Form metal oxide film, cover the described front surface of described metallic substrates, described rear surface and described side surface;
Form tacky film, cover the metal oxide film that is formed on the described front surface;
Form metal pattern in described tacky film; And
Process by carrying out layering on the generating structure that is formed with therein described metal oxide film, remove the metal oxide film that is formed on described rear surface and the described side surface.
2. method according to claim 1, wherein, the step of described preparation metallic substrates comprises the step for preparing aluminium sheet, the step of described formation metal oxide film comprises carries out anodised step to described aluminium sheet.
3. method according to claim 1, wherein, the step of described formation metal pattern comprises:
Lamination Copper Foil on described tacky film; And
Before the step of removing described metal oxide film, described Copper Foil is carried out etch processes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090103320A KR101075738B1 (en) | 2009-10-29 | 2009-10-29 | Radiating structure and method for manufacturing the same |
| KR10-2009-0103320 | 2009-10-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102054932A CN102054932A (en) | 2011-05-11 |
| CN102054932B true CN102054932B (en) | 2013-03-20 |
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ID=43959073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010124695 Expired - Fee Related CN102054932B (en) | 2009-10-29 | 2010-02-08 | Thermoradiation structure and manufacturing method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5086379B2 (en) |
| KR (1) | KR101075738B1 (en) |
| CN (1) | CN102054932B (en) |
| TW (1) | TWI422078B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102176472B1 (en) * | 2014-01-28 | 2020-11-09 | 엘지이노텍 주식회사 | PRINTED CIRCUIT BOARD AND luminous device INCLUDING THE SAME |
| KR102339683B1 (en) * | 2015-02-16 | 2021-12-16 | 주식회사 아모그린텍 | Heat radiation unit for a wireless charging and wireless charging module having the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101253627A (en) * | 2005-08-31 | 2008-08-27 | 三洋电机株式会社 | Circuit device and method for manufacturing same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05144985A (en) * | 1991-11-18 | 1993-06-11 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
| JPH07162116A (en) * | 1993-12-01 | 1995-06-23 | Toagosei Co Ltd | Metallic base material and its production |
| JPH08125117A (en) * | 1994-10-19 | 1996-05-17 | Sanyo Electric Co Ltd | Hybrid integrated circuit device and production thereof |
| JP2002299540A (en) * | 2001-04-04 | 2002-10-11 | Hitachi Ltd | Semiconductor device and manufacturing method therefor |
| TWI220282B (en) * | 2002-05-23 | 2004-08-11 | Viking Technology Corp | Package method for enhancing the brightness of LED |
| TW594950B (en) * | 2003-03-18 | 2004-06-21 | United Epitaxy Co Ltd | Light emitting diode and package scheme and method thereof |
| KR100647867B1 (en) * | 2005-11-07 | 2006-11-23 | (주)싸이럭스 | Light emitting device and package structure thereof |
| JP2007194405A (en) * | 2006-01-19 | 2007-08-02 | Nitto Shinko Kk | Epoxy resin composition for heat conduction |
| WO2008021269A2 (en) * | 2006-08-11 | 2008-02-21 | E. I. Du Pont De Nemours And Company | Device chip carriers, modules, and methods of forming thereof |
| TWM330566U (en) * | 2007-08-16 | 2008-04-11 | Litatek Corp | Light-emitting device |
| JP5220373B2 (en) * | 2007-09-25 | 2013-06-26 | 三洋電機株式会社 | Light emitting module |
-
2009
- 2009-10-29 KR KR1020090103320A patent/KR101075738B1/en not_active IP Right Cessation
-
2010
- 2010-01-11 TW TW99100612A patent/TWI422078B/en not_active IP Right Cessation
- 2010-01-27 JP JP2010015996A patent/JP5086379B2/en not_active Expired - Fee Related
- 2010-02-08 CN CN 201010124695 patent/CN102054932B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101253627A (en) * | 2005-08-31 | 2008-08-27 | 三洋电机株式会社 | Circuit device and method for manufacturing same |
Non-Patent Citations (4)
| Title |
|---|
| JP特开2007-194405A 2007.08.02 |
| JP特开平5-144985A 1993.06.11 |
| JP特开平7-162116A 1995.06.23 |
| JP特开平8-125117A 1996.05.17 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011096996A (en) | 2011-05-12 |
| KR20110046713A (en) | 2011-05-06 |
| CN102054932A (en) | 2011-05-11 |
| JP5086379B2 (en) | 2012-11-28 |
| KR101075738B1 (en) | 2011-10-26 |
| TWI422078B (en) | 2014-01-01 |
| TW201115799A (en) | 2011-05-01 |
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