KR100466162B1 - method of manufacturing an insulated metal substrate - Google Patents

Abstract

A high performance metal insulated substrate is disclosed that further improves thermal conductivity and mechanical strength and significantly improves the bonding between the insulating material and the metal plate so that it is not easily peeled off even under continuous thermal shock. According to the present invention, a metal insulating substrate is manufactured by stacking metal, an insulating material, and an electrode material having excellent thermal conductivity in turn, and then forming a metal insulating substrate in a hot press capable of simultaneously applying temperature and pressure. In order to use it as a substrate for a substrate, it cuts to the size according to a specification, and forms the electrode required for a thermoelectric semiconductor module substrate by formation of a pattern and an etching. The present invention is very excellent in electrical insulation properties, thermal conductivity and mechanical strength, inexpensive price, excellent productivity because the work process is not complicated, not only substrate for thermoelectric semiconductor module but also insulated metal printed circuit board (IMPCB) It can also be used in the field, and it is expected to be used explosively in related fields.

Description

Method of manufacturing an insulated metal substrate

The present invention relates to a method for producing a high performance metal insulating substrate. In particular, by manufacturing a metal substrate with excellent thermal conductivity and mechanical properties using a hot press as a substrate for a thermoelectric semiconductor module, it is possible to quickly release the Peltier heat and Joule heat generated at the junction of the thermoelectric semiconductor device, High-performance metal insulation boards that can be used as substrates for Insulated Metal Printed Circuit Boards (IMPCBs) can be produced with improved efficiency and resistance to mechanical shock, and excellent electrical insulation and thermal conductivity. It is about the manufacturing method of the.

In general, the thermoelectric semiconductor module is a material capable of mutual conversion of thermal energy and electrical energy based on the thermoelectric effect, and has been applied for local cooling of various electronic devices or IC products such as focusing plate cooling of infrared sensors, laser diodes, and CCD devices. In addition, it is widely applied to medical or scientific thermostats, thermoelectric cooling refrigerators, air conditioners, heat exchangers, and thermoelectric generators.

Substrates used in thermoelectric semiconductor modules require excellent electrical insulation properties, thermal conductivity, and mechanical properties. In the case of using metal substrates, electrical insulation properties are very poor, and ceramic substrates have been used so far despite low mechanical properties. It is true.

FIG. 1 is a cross-sectional view of a thermoelectric semiconductor module 10 manufactured using a conventional ceramic substrate, in which N, P are formed at the center of upper and lower ceramic substrates 16 and 17 on which electrodes 13 are formed, respectively. Type thermoelectric semiconductor elements 14 and 15 are repeatedly attached to each other. The ceramic substrates 16 and 17 used in the thermoelectric semiconductor module 10 form a pattern by printing a conductive material 11 such as silver (Ag) on the top of the substrate, and then a copper or the like on the top of the pattern. It is manufactured through a complicated process of printing with a solder 12 to attach the electrode 13 of.

Ceramic substrates are very poor in mechanical properties, difficult to handle, and have disadvantages in that they are expensive due to poor productivity during processing. In addition, when producing a thermoelectric semiconductor module using a ceramic substrate, productivity is reduced by forming a pattern of a conductive material on the ceramic substrate, and then applying a complex process of applying an electrode by soldering and attaching the thermoelectric semiconductor element by soldering again. There is a weak point in mechanical impact.

In addition, IMPCB has better thermal conductivity, that is, heat dissipation, than conventional epoxy PCBs, so it can be used for UPS, washing machine, power device, battery charger and anti-slip. It is widely applied to electronic fields with high heat generation such as brake system (ABS), and according to the trend of high performance and high integration, more and more excellent electrical insulation characteristics and thermal conductivity characteristics are required. Therefore, there is a demand for the development of a high-performance metal insulation substrate exhibiting excellent electrical insulation properties and thermal conductivity properties to replace the conventional metal insulation substrate for IMPCB.

The present invention has been invented in order to meet the above necessity, and a metal insulating substrate is manufactured by a method of applying a predetermined temperature and pressure simultaneously after sequentially laminating a metal plate, an insulating material, and an electrode material in a hot press. It is an object of the present invention to provide a method for producing a high-performance metal insulation substrate having a simple process, excellent productivity, low cost, and excellent mechanical, thermal conductivity, and electrical insulation properties.

1 is a cross-sectional view of a thermoelectric semiconductor module manufactured using a conventional ceramic substrate.

2 is a schematic view of a system for producing a high performance metal insulated substrate using a hot press in accordance with the present invention.

FIG. 3 is a graph showing a temperature and pressure distribution in a hot press for producing the high performance metal insulated substrate shown in FIG. 2.

4 is a cross-sectional perspective view of a high performance metal insulated substrate according to the present invention.

FIG. 5 is a view for showing a state in which P and N type thermoelectric semiconductor elements are alternately attached to an upper portion of a high-performance metal insulation substrate manufactured by the present invention.

<Description of the reference numerals for the main parts of the drawings>

110: hot press system 112, 114: pressure plate

120: heat source 122: reinforcement plate

123: metal plate 124: insulating material

125: electrode material 160, 170: upper and lower substrates

180, 190: P, N type thermoelectric semiconductor device

The present invention for achieving such an object,

In order to minimize the thermal gradient inside the hot press designed to apply pressure from one side of the top or bottom, or both sides of the top and bottom, a plurality of heat sources are installed in each layer, within a temperature range of 20 to 50 ° C. After preheating the hot press, laminating a metal plate, an insulating material, and an electrode material between the reinforcing plates, and then charging it between the heat sources in the hot press;

After the above step, the pressure is maintained in the range of 1 to 50 Kgf / cm 2 and maintained for 10 minutes to 1 hour, and then the pressure in the range of 50 to 150 Kgf / cm 2 is applied to the temperature within the range of 50 to 400 ° C. Raise to hold for 30 minutes to 5 hours; And,

After the step is carried out indirect water cooling to 30 ~ 50 ℃ while maintaining a pressure in the range of 50 ~ 150 Kgf / ㎠ includes the step of maintaining the pressure at room temperature for 30 minutes to 1 hour by removing the pressure.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 2 of the accompanying drawings is a schematic view showing a system for manufacturing a high performance metal insulation substrate using a hot press according to the present invention, Figure 3 is a hot press for manufacturing a high performance metal insulation substrate shown in FIG. A graph showing temperature and pressure distributions.

4 is a cross-sectional perspective view of a high performance metal insulation substrate according to the present invention, and FIG. 5 is a P and N type thermoelectric semiconductor element intersecting on top of the high performance metal insulation substrate manufactured according to the present invention. The figure to show the attached state.

In the high-performance metal insulation substrate according to the present invention, as shown in FIG. 2, a plurality of heat sources 120 are arranged in parallel between the upper and lower pressure plates 112 and 114 that apply pressure in the hot press 110, and A plurality of reinforcing plates 122 made of an Fe-based alloy are disposed in parallel between the heat sources 120. The metal plate 123, the insulating material 124, and the electrode material 125 are sequentially stacked between the reinforcing plates 122.

The metal plate 123 is made of aluminum (Al), copper (Cu), alloys thereof, or duralumin, which are excellent in thermal conductivity and mechanical properties. The metal plate 123 is mechanically formed to increase adhesion to the insulating material 124. In order to remove the scratch (front) process was carried out and after the brushing (brushing) to remove the burrs of the side occurred during the front process (washing) is performed. Since the thickness of the metal plate 123 depends on the specifications of the thermoelectric semiconductor module and the IMPCB, the hot press system is designed to enable various manufactures having a thickness of 1 to 20 mm according to the purpose of use.

The insulating material 124 is required to have excellent electrical insulation properties, electrical conductivity properties and bonding properties with the metal plate 123, such as epoxy (resin (FR-4)), prepreg (prepreg) Circuit material laminates, multi-purpose (MP), low thermal impedance (LPI), high tempera- ture (High Temperature), etc. are widely used. Generally, the thicker the insulating material, the lower the thermal conductivity. The thermal conductivity and electrical insulation characteristics are different depending on the type of insulating material. Therefore, it varies in the range of 40 ~ 300㎛ depending on the specifications of the thermoelectric semiconductor module and IMPCB. It is designed to be selectable.

As the electrode material 125 used in the present invention, copper, silver, platinum, etc. were used, and the electrode material 125 was pressed to a thickness of about 100 to 500 μm.

As such, a plurality of reinforcing plates 122 made of an Fe-based alloy are arranged in parallel between the plurality of heat sources 120 arranged in parallel between the upper and lower pressure plates 112 and 114 of the hot press 110. The metal plate 123, the insulating material 124, and the electrode material 125 are sequentially stacked up to 60 simultaneously between the reinforcing plates 122, and then a temperature and pressure are simultaneously applied to manufacture a metal insulating substrate.

Fabrication of the metal insulation substrate is performed in an inert gas atmosphere (argon, nitrogen or hydrogen atmosphere), vacuum or atmosphere, and the heat source 120 is installed in each layer in the hot press 110 to minimize the temperature gradient for each layer. The pressure was designed to be applied at the top or bottom or both sides.

As shown in FIG. 3, the metal insulation substrate is preheated by the hot press system to preheat the hot press 110 to a temperature T1 within a range of 20 to 50 ° C., and then the metal plate 123 is insulated between the reinforcing plates 122. The material 124 and the electrode material 125 are stacked and loaded into each layer in the hot press system.

After charging is completed, the pressure (P1) in the range of 1 to 50 Kgf / cm2 is applied and maintained for a specific time (t1) in the range of 10 minutes to 1 hour, and then the pressure (P2) in the range of 50 to 150 Kgf / cm2. At the same time increasing the temperature (T2) in the range of 50 ~ 400 ℃ while maintaining the pressure for about 30 minutes to 5 hours. Then, after the indirect water cooling to about 30 ~ 50 ℃ while maintaining the pressure P2 is removed, the pressure is removed to maintain the metal insulation substrate by maintaining at about 30 minutes to 1 hour at room temperature of atmospheric pressure.

The metal insulation substrate completed through this process can be manufactured in various sizes (10-100 cm x 10-100 cm x 1-15 mm) by a hot press system, and a thermoelectric semiconductor module and an IMPCB. Can be easily cut and used according to the specifications.

As shown in FIG. 5, the metal insulation substrate manufactured as described above has a plurality of P and N types on the upper and lower plates 160 and 170 of the upper and lower metal insulation substrates formed by etching by cutting according to the thermoelectric semiconductor module specifications. A thermoelectric semiconductor module is manufactured by attaching the thermoelectric semiconductor elements 180 and 190.

The metal insulated substrate manufactured by the present invention can be easily mass-produced by a hot press system, and when used as a substrate for thermoelectric semiconductor modules, a pattern can be easily formed by etching, so that the specifications of a thermoelectric semiconductor module can be met. Accordingly, there is an advantage in that the cutting and the formation of patterns of various sizes are easy.

As described above, the high-performance metal insulation substrate manufactured according to the present invention has superior thermal conductivity than a conventional ceramic substrate, and thus, when used for a thermoelectric semiconductor module, it rapidly releases Joule heat generated from the thermoelectric semiconductor module. The operating characteristics can be improved, and the mechanical properties are much better than that of the ceramic substrate, so that it is easy to handle and the productivity is dramatically improved. In addition, it is possible to reduce the production cost by using a metal plate which is cheaper than the ceramic substrate, can be easily manufactured by a hot press system, and a pattern can be easily formed by etching metal insulating substrates of various sizes. There is an advantage that can be selected appropriately according to the specifications of the.

In addition, by manufacturing a high-performance metal insulating substrate having excellent thermal conductivity and electrical insulation properties compared to the ceramic substrate can be used in a substrate such as IMPCB, it is expected that a wide range of applications to the related industries.

Although the preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, the present invention is not limited thereto and may be improved or modified by those skilled in the art within the scope of the technical idea of the present invention.

Claims (4)

Iii) a plurality of heat sources 120 are installed in each layer in order to minimize the thermal gradient in the inside of the hot press 110 designed to apply pressure from one side of the upper part or the lower part or both sides of the upper part and the lower part. After preheating the hot press 110 within a temperature range of 50 ° C., the metal plate 123, the insulating material 124, and the electrode material 125 are laminated between the reinforcing plates 122 and then the hot press 110. Charging between heat sources 120 in the chamber; Ii) In the above step, while maintaining a pressure of 1 ~ 50 Kgf / ㎠ ranged from 10 minutes to 1 hour while applying a pressure of 50 ~ 150 Kgf / ㎠ range of 50 ~ 400 ℃ at the same time Raising to an internal temperature and maintaining for 30 minutes to 5 hours; And, Iii) a metal insulation substrate comprising the step of indirect water cooling to 30 ~ 50 ℃ while maintaining the pressure in the range of 50 ~ 150 Kgf / ㎠ after the step to maintain the pressure at room temperature for 30 minutes ~ 1 hour Manufacturing method. The method of claim 1, wherein the step (f) is performed in an inert gas atmosphere such as argon, nitrogen, or hydrogen, vacuum, or air. According to claim 1, The metal plate 123 is aluminum (Al), copper (Cu) excellent in thermal conductivity and mechanical properties of performing a front surface process to mechanically create a scratch to increase the bonding with the insulating material 124 ), Alloys thereof, or duralumin. The method of claim 1, wherein the insulating material is epoxy-based resin (FR-4), prepreg, circuit material laminate (Multi-purpose), multi-purpose MP), low thermal impedance (LPI), and high temperature (High Temperature).