TWI220282B - Package method for enhancing the brightness of LED - Google Patents
Package method for enhancing the brightness of LED Download PDFInfo
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- TWI220282B TWI220282B TW091118505A TW91118505A TWI220282B TW I220282 B TWI220282 B TW I220282B TW 091118505 A TW091118505 A TW 091118505A TW 91118505 A TW91118505 A TW 91118505A TW I220282 B TWI220282 B TW I220282B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
Description
1220282 五、發明說明（1) 【發明背景】 1 ·發明之領域 本發明係關於一種發光二極體封裝方法，尤有關一種 利==垣化（1313]^1^2&1；1〇11)製程以提高發光二極體亮 之封裝方法。 2 ·相關技術之描述1220282 V. Description of the invention (1) [Background of the invention] 1. Field of invention The present invention relates to a method for packaging light-emitting diodes, and more particularly to a benefit == 垣 化 (1313] ^ 1 ^ 2 &1; 1〇11 ) Process to improve the packaging method of light-emitting diodes. 2 Description of related technologies
發光一極體所發出之光線，容易受到自身封裝結構的 限制。例如發光二極體往基板方向發出之光線，即受到如 基板之類的封裝結構阻擋而無法使此一部分的光線作較佳 運用羽因此難以進一步提昇出光效率及發光強度。 一 白知封裝技術，如公告第4 7 4 0 3 0號中華民國專利「發 光極體之封裝方法」，如圖1 A所示，係先將一電路板基 材101表面鍍上金屬導電層後，再將該金屬導電層1Q2 切割成圖1B所示之正負電極1〇^、1 〇2B。接著與發光二極 體晶粒103接合後再以樹脂層104密封之。 上述習知之發光二極體封裝方法，由於用以形成電極The light emitted by the light emitting diode body is easily restricted by its own packaging structure. For example, the light emitted by the light-emitting diode toward the substrate is blocked by the packaging structure such as the substrate and cannot make this part of the light work better. Therefore, it is difficult to further improve the light efficiency and luminous intensity. One knows packaging technology, such as the announcement of the Republic of China Patent No. 4 7 0 0 30 "the packaging method of the light emitting body", as shown in Figure 1A, the surface of a circuit board substrate 101 is first plated with a metal conductive layer After that, the metal conductive layer 1Q2 is cut into positive and negative electrodes 10 ^, 102B as shown in FIG. 1B. It is then bonded to the light-emitting diode die 103 and sealed with a resin layer 104. Since the conventional light emitting diode packaging method is used to form an electrode,
屬導電層102為金屬材料而可能兼具光反射作用，但 上遠封裝方法係直接將金屬導電層丨〇 2鍍於電路板基材1 〇 i 之又限於基板材料本身之孔隙及粗糙度影響，會使其上 線金屬錄層無光澤導致反射效果極差。故當發光二極體光 吸Γ射至該不均勻之金屬鑛層表面時’光線被大量漫射與 方^而大幅降低反射率，使經由該金屬導電層反射至出光 向的光線微弱，而難以達到提昇出光效率及發光強度之 預期效果。The conductive layer 102 is a metal material and may have both the light reflection effect, but the packaging method of Shangyuan is to directly plate the metal conductive layer 丨 〇2 on the substrate of the circuit board 1 〇i and is limited to the pores and roughness of the substrate material itself , It will make the on-line metal recording layer dull and cause extremely poor reflection effect. Therefore, when the light-emitting diode absorbs light and hits the surface of the non-uniform metal ore layer, the light is diffused and diffused to greatly reduce the reflectance, so that the light reflected to the outgoing direction through the metal conductive layer is weak, and It is difficult to achieve the desired effect of improving light extraction efficiency and luminous intensity.
第4頁 1220282 五、發明說明（2) 【發明的綜合說明】 因此，本發明之目的在提供一種提高發光二極體亮度 之封裝方法，藉由一先經平坦化處理而形成之反射面，可 達到大幅提高發光二極體亮度之效果。 依本發明之一實施例包含以下步驟，首先對一載體之 表面進行平坦化（pianarizati〇n)處理，再於該載體表面 上形成一反射面，然後貼附發光二極體晶粒於該載體上。 上述之平坦化處理步驟可藉由玻璃移印（Transfer Printing)、喷塗（Spray)、刷塗（Blushing)、玻璃沾附 (Dipping)方式’或者化學機械拋光法（Chemical Mechanical P〇l ishing)完成。 另外’反射面可採金屬賤鍍法（S P U h e r i n g )或蒸鍍法 (Evaporation)形成，而發光二極體晶粒可採表面黏著 (Surface Mounting)方式貼附於該載體上。 本發明之另一實施例係提供一具有凹槽之載體，然後 對該載體之凹槽表面進行平坦化處理。接著，於該凹槽表 面上形成一反射面後，將發光二極體晶粒貼附於該載體之 凹槽内。 再者，該載體之凹槽内部可形成一突起部，將發光二 極體晶粒貼附於該突起部上，可對該反射面形成一較佳之 入射角度。 另外於本發明之再另一實施例中，提供具有一經平 坦化處理後再形成反射面之塊狀構件^將該塊狀構件安裝Page 4 1220282 V. Description of the invention (2) [Comprehensive description of the invention] Therefore, the object of the present invention is to provide a packaging method for improving the brightness of a light-emitting diode, and a reflective surface formed by a planarization process, Can achieve the effect of greatly improving the brightness of the light-emitting diode. According to an embodiment of the present invention, the method includes the following steps: firstly, performing a pianarization treatment on the surface of a carrier, forming a reflective surface on the surface of the carrier, and then attaching light emitting diode grains to the carrier. on. The above-mentioned planarization processing steps can be performed by glass printing (Transfer Printing), spraying (Spray), brushing (Blushing), glass dipping (Dipping) method, or chemical mechanical polishing (Chemical Mechanical Polling). carry out. In addition, the 'reflecting surface can be formed by a metal base plating method (SPU) or evaporation (evaporation method), and the light emitting diode crystals can be attached to the carrier by surface mounting. Another embodiment of the present invention is to provide a carrier having a groove, and then planarize the groove surface of the carrier. Then, after forming a reflective surface on the surface of the groove, the light-emitting diode die is attached to the groove of the carrier. Furthermore, a protrusion can be formed inside the groove of the carrier, and the light-emitting diode crystals can be attached to the protrusion to form a better incident angle to the reflecting surface. In addition, in another embodiment of the present invention, a block member having a flattened surface and then forming a reflective surface is provided. ^ The block member is installed
第5頁 至載體表面上時，因Α可 同配置或製造成不同；形：極體晶粒位置而有不 設計更為容易。 使本發明之光反射面的最佳化 理以形成=二ί體時，先對載體進行平坦化處 射面能4::==驟，可使於其上接續沉積之反 率。當栽體上來卜一 而大幅提鬲該反射面之反射 方向發出.光滑反射面時，發光二極體往載體 大量方Γ由本發明所形成之高反射率反= 加，提高發之：：發光二極體之出光效率大幅增 【車乂佳貫施例之詳細說明】 相同二了將參照相關圖式說明之本發明較佳實施例，其中 、凡件將以相同的參照符號加以說明。 程庠f 2A至圖2C顯示依本發明之-實施例，其各階段製作 極=之，面圖。首先如圖2A所示，使用載體2作為發光二 導俨n 士破基座’该載體2之材料可為陶瓷基板或其他半 之平i曰料。接著’對載體2進行平坦化處理’依本實施例 4 +旦化方式為於載體2表面上形成一平坦層4。該平坦層 pri采.用玻璃沾附（DiPPing)、移印（丁ransfer *9ntlng)、刷塗（Blushing)或喷塗（Spray)方式形成於載 或孔衣面上。平坦層4可填補載體2材料本身之表面凹洞 ^平土隙’而使其表面平坦化。接著，於已進行平坦化處理 一層4)之表面上，以蒸鐘（Evaporation)或濺鍍 1220282 五、發明說明（4) (Sputtering)等薄膜沉積方法，沉積金屬以形成金屬反射 面5，然後再以沾附、濺鍍或蒸鍍、·移印或刷塗方式，於 載體2兩端形成電性相反之金屬電極3A及3B。如圖2B所 示，因金屬反射面5形成於已經過平坦化處理之載體表.面 (即平坦層4 )上，故可獲得一相當平滑之表面。 繼而如圖2C所示，利用表面黏著（Surface Mounting) 的方式貼附一發光二極體晶粒6，再以打線接合（Wi re Bonding)方式，藉由導線7A、7B將發光二極體晶粒6電連 接至電極3 A、3 B上。最後再以樹脂封膠（Ε Ρ 〇 X y Encapsulating)，利用樹脂層8覆蓋發光二極體晶粒6以避 免接觸外界之氧氣或水分，而完成本發明之發光二極體封 裝1。 當表面粗糙度高或具較大孔隙時，入射至該表面之光 線容易被漫射及吸收，而使反射光強度大幅下降。本發明 先對載體2進行平坦化處理以形成平滑之載體表面，可使 於其上接績沉積之反射面5能均勻形成為光滑表面，大幅 提高該反射面之反射率。當載體上形成有上述經平坦化處 理之表面，而後再形成光滑反射面時，發光二極體往載體 方向發^之光線，會藉由本發明所形成之高反射率反射 面，大ϊ反射至出光方向而獲得充分運用，如此可使發光 一極體之出光效率大幅增加，從而提高發光二極體之 度。 圖巧至3D為依本發明提高發光二極體亮度之封裝方法 之另一貫施例，顯示其各階段製作程序之剖面圖。When it is on the surface of the carrier, because A can be configured or manufactured differently; shape: the position of the polar crystal grains is easier to design. When the light reflecting surface of the present invention is optimized to form a two-dimensional body, the carrier is first flattened and the radiation surface energy is 4 :: == steps, so that the reflectivity of subsequent deposition can be continued on it. When the plant comes up, the reflection direction of the reflecting surface is greatly improved. When the reflecting surface is smooth, the light-emitting diode is reflected in a large amount on the carrier. The high reflectance formed by the present invention is reversed to increase, and it is improved :: The light-emitting efficiency of the diode is greatly increased. [Detailed description of the embodiment of the car's Jiaguan] The same is the preferred embodiment of the present invention which will be described with reference to the related drawings. Among them, all parts will be described with the same reference symbols. Cheng Yi f 2A to FIG. 2C show an embodiment according to the present invention, in which the poles are fabricated at various stages, and the top views are shown. First, as shown in FIG. 2A, the carrier 2 is used as a light-emitting diode and a broken base. The material of the carrier 2 may be a ceramic substrate or other materials. Next, "planarize the carrier 2" according to this embodiment 4 + a denier method is to form a flat layer 4 on the surface of the carrier 2. The flat layer pri is formed on the surface of the carrier or the garment with glass coating (DiPPing), pad printing (Bransfer * 9ntlng), brushing (Blushing) or spraying (Spray). The flat layer 4 can fill the surface holes of the material of the carrier 2 ^ flat soil gap 'and flatten its surface. Next, on the surface of the layer 4) that has been planarized, a thin film deposition method such as evaporation or sputtering 1220282 is used to deposit metal to form a metal reflective surface 5 and then Then, by means of adhesion, sputtering or evaporation, pad printing or brush coating, metal electrodes 3A and 3B with opposite electrical properties are formed on both ends of the carrier 2. As shown in FIG. 2B, since the metal reflecting surface 5 is formed on the surface of the carrier (that is, the flat layer 4) that has been subjected to the flattening treatment, a relatively smooth surface can be obtained. Then, as shown in FIG. 2C, a light-emitting diode crystal 6 is attached by means of surface mounting, and then the light-emitting diode crystal is wired by wires 7A, 7B by means of Wi re Bonding. The pellet 6 is electrically connected to the electrodes 3 A, 3 B. Finally, a resin encapsulant (EP × y Encapsulating) is used to cover the light-emitting diode crystal grains 6 with a resin layer 8 to avoid contact with external oxygen or moisture, thereby completing the light-emitting diode encapsulation 1 of the present invention. When the surface has high roughness or has large pores, the light incident on the surface is easily diffused and absorbed, so that the intensity of the reflected light is greatly reduced. In the present invention, the carrier 2 is first planarized to form a smooth carrier surface, so that the reflective surface 5 deposited thereon can be uniformly formed into a smooth surface, and the reflectance of the reflective surface is greatly improved. When the above-mentioned flattened surface is formed on the carrier, and then a smooth reflective surface is formed, the light emitted by the light emitting diode toward the carrier will be reflected by the high-reflectance reflective surface formed by the present invention to The light emitting direction is fully utilized, so that the light emitting efficiency of the light emitting diode can be greatly increased, thereby improving the degree of the light emitting diode. Figures 3D to 3D are another embodiment of a packaging method for improving the brightness of a light emitting diode according to the present invention, and are cross-sectional views showing a manufacturing process at each stage thereof.
第7頁 1220282 五、發明說明（5) 如圖3A所示，談實施例之作法為·提供一具有凹槽之載 。乍a為封裝基座，且載體2之凹槽内更形成有一突起部 =。该，體2之材料，同樣可為陶瓷基板或其他半導體材 發接著，以沾附、移印或刷塗方式，於載體2兩端形 電性相反之電極3A及3B。 繼而，對載體2之凹槽内部進行平坦化處理。如圖3β 品^ >依本貫施例之平坦化方式為於載體2之凹槽内部表 命Ϊ ί 一平坦層4。該平坦層4可採用玻璃沾附、移印、刷 —塗方式形成於載體2之凹槽内部表面上。接著如圖 屬供^ i利用金屬濺鍍或蒸鍍等薄膜沉積方法，將反光金 屬鍍至平坦層4丨，使載體2之凹槽内部形成一金屬反射面 理之金屬反射面5之形成，係沉積在已經過平坦化處 里體表面（即平坦層4)上，故同樣可獲得一相當平滑 之反射面。 ，圖3D所示’㈤樣再利用表面黏著的方式將發光二極 貼附於金屬反射面5上，再以打線接合方式，藉由 =線7A、7B將發光二極體晶粒6電連接至電極3Α、3β上。 Ϊ 覆蓋發光二極體晶粒6而完成本發明之發 光一極體封裝11。 M H施例之㈣2的凹槽内形成有一突起部2a，當 發光二極體晶粒6貼附於突起部2a±之金屬反射面5時，突 起部2a能使發光二極體晶粒6具有一定的高度。因此，金 屬^射面5接收到發光二極體所發出之光線的受光面積得 以增加’且於形成載體時，可同時選取一最佳之突起㈣Page 7 1220282 V. Description of the invention (5) As shown in FIG. 3A, the method of the embodiment is to provide a load with a groove. Za is a package base, and a protrusion is formed in the groove of the carrier 2. The material of the body 2 may also be a ceramic substrate or other semiconductor material. Then, the electrodes 3A and 3B having opposite electrical properties are formed on both ends of the carrier 2 by means of adhesion, pad printing or brush coating. Then, the inside of the groove of the carrier 2 is flattened. As shown in FIG. 3, the product ^ > The flattening method according to the present embodiment is to designate a flat layer 4 inside the groove of the carrier 2. The flat layer 4 can be formed on the inner surface of the groove of the carrier 2 by means of glass adhesion, pad printing, and brush-coating. Next, as shown in FIG. 1a, a thin metal deposition method such as metal sputtering or vapor deposition is used to plate reflective metal onto the flat layer 4 丨 so that the inside of the groove of the carrier 2 forms a metal reflecting surface 5 with a metal reflecting surface texture. Because it is deposited on the surface of the body (that is, the flat layer 4) that has been flattened, a fairly smooth reflecting surface can also be obtained. As shown in FIG. 3D, the light-emitting diode is attached to the metal reflective surface 5 by surface adhesion, and then the light-emitting diode crystal grains 6 are electrically connected by the wire bonding method through the wires 7A and 7B. To the electrodes 3A, 3β. Ϊ Cover the light-emitting diode die 6 to complete the light-emitting diode package 11 of the present invention. A protrusion 2a is formed in the groove of ㈣2 of the MH embodiment. When the light-emitting diode die 6 is attached to the metal reflecting surface 5 of the protrusion 2a ±, the protrusion 2a can make the light-emitting diode die 6 have A certain height. Therefore, the metal light-emitting surface 5 can increase the light-receiving area of the light emitted from the light-emitting diode ', and when the carrier is formed, an optimal protrusion can be selected at the same time.
1220282 五、發明說明（6) 一" 馬度，使發光二極體對該金屬反射面形成一良好之入射角 度’俾獲得最大之出光量。 圖4 A至4 C為顯示本發明之再另一實施例其各階段製作 程序的剖面圖。 首先如圖4A所示，對一材料為陶瓷之類的平板狀載體 2進行平坦化處理。繼而如圖4B所示，形成反射面5及電性 相反之金屬電極3A及3B後，再貼附發光二極體晶粒6並將 其電連接至電極3A及3B。 接著，如圖4C所示，將塊狀構件9黏附於載體2上，該 塊狀構件已先進行過平坦化處理（平坦層4)並沉積有金屬^ 反射面5。最後利用樹脂層8覆蓋發光二極體晶粒β，而完 成本實施例之發光二極體封裝21。該塊狀構件之材 為陶瓷或玻璃等等。 ， 本實施例之反射面因形成於平坦化處理後之載體2 塊狀構件9上’同樣可成為含$鱼+玄， ^ ^ ^ ^ J成為冋反射率之金屬反射面以提高 總反射面積，而達到本發明提高亮度之效果 有金屬反射面5形成之堍妝摇Α 〇 π κ人心 八 R你番而古X m 構件可配合發光二極體晶粒 6位置而有不同的配置且可製造成不同 提高發光亮度為前提之反便本I明以 且更為容易。#之反射面的最佳化設計’能更具彈性 又，本發明之平i曰化迤 ,_ 行化學機械拋光（Che_ffi = 也可採用直接於载體上進 “emical Mechanical p〇ihhμ 方式，以獲得一光滑的载體表面。 〇lishlng)的 以上所述僅為舉例性 12202821220282 V. Description of the invention (6) a "horse degree" enables the light-emitting diode to form a good incident angle on the metal reflecting surface ', to obtain the maximum light output. Figs. 4A to 4C are cross-sectional views showing a production process of each stage of another embodiment of the present invention. First, as shown in Fig. 4A, a flat plate-shaped carrier 2 made of a material such as ceramics is subjected to a planarization treatment. Then, as shown in FIG. 4B, after the reflective surface 5 and the electrically opposite metal electrodes 3A and 3B are formed, the light-emitting diode crystal grains 6 are attached and electrically connected to the electrodes 3A and 3B. Next, as shown in FIG. 4C, a block member 9 is adhered to the carrier 2. The block member has been subjected to a flattening process (flat layer 4) and a metal reflective surface 5 is deposited thereon. Finally, the light emitting diode crystal grains β are covered with the resin layer 8 to complete the light emitting diode package 21 of the embodiment. The material of the block member is ceramic or glass or the like. The reflecting surface of this embodiment is formed on the carrier 2 block member 9 after the flattening treatment. It can also become a metal reflecting surface containing $ fish + xuan, and ^ ^ ^ ^ J becomes a reflective surface of metal to increase the total reflection area. In order to achieve the effect of improving the brightness of the present invention, there is a makeup shake formed by the metal reflective surface 5 〇π κ 人心 八 R You Fan and the ancient X m member can be differently matched with the position of the light emitting diode crystal 6 and can be different The premise of making it different to improve the luminous brightness is easier and easier. # 的 Reflective surface optimization design 'can be more flexible. In addition, the invention of the present invention refers to chemical mechanical polishing (Che_ffi = You can also use the "emical Mechanical poihhμ method directly on the carrier, To obtain a smooth carrier surface. The above description is only exemplary 1220282
第10頁Page 10
其製==為習知發光二極體封裝方法之一例，顯示 1作k ί王之剖面示意圖。 圖2Α至2C為依本發明提高發光二極體亮度之封裝 的一實施例，顯示其各階段製作程序之剖面圖。 电 圖2至3D為依本發明提高發光二極體亮度之方 另一實施例，顯示其各階段製作程序之剖面圖。、/ 符號實說施明例】，顯示其各階段製作程序之剖 圖4Α至4C為依本發明提高發光二極體亮度之 之又另一實施例，顯示1夂fT比π w w 一 >、I方法 1 2 11、2 1 發光二極體封裝 載體 & 2a 突起部 3A ^ 3B 電極 4 平 5 金 6 發 7A 、7B 導 8 樹 9 塊 101 電 102 金 102A 、102B 電 103 發 104 樹 坦層 屬反射面 光一極體晶教 線 脂層 狀構件 路板基材 屬導電層 極 光二極體晶粒 脂層The system == is an example of a conventional light-emitting diode packaging method, showing a schematic cross-section of a king. Figures 2A to 2C are cross-sectional views of an embodiment of a package for improving the brightness of a light emitting diode according to the present invention, showing the manufacturing process at each stage. Electrographs 2 to 3D are another embodiment of the method for improving the brightness of a light-emitting diode according to the present invention, and are cross-sectional views showing the manufacturing process of each stage. 、 / Speaking actual examples], Sectional diagrams showing the production process at each stage 4A to 4C are still another embodiment for improving the brightness of the light-emitting diode according to the present invention, and show 1 夂 fT ratio π ww 1 >, I method 1 2 11, 2 1 Light emitting diode package carrier & 2a protrusion 3A ^ 3B electrode 4 flat 5 gold 6 hair 7A, 7B guide 8 tree 9 block 101 electricity 102 gold 102A, 102B electricity 103 hair 104 tree 104 Layered reflective surface light-polar crystalline grease layered component road board substrate is conductive layer aurora diode grain fat layer
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| TW091118505A TWI220282B (en) | 2002-05-23 | 2002-08-15 | Package method for enhancing the brightness of LED |
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| TW091118505A TWI220282B (en) | 2002-05-23 | 2002-08-15 | Package method for enhancing the brightness of LED |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8382345B2 (en) | 2005-06-07 | 2013-02-26 | Fujikara Ltd. | Porcelain enamel substrate for mounting light emitting device and method of manufacturing the same, light emitting device module, illumination device, display unit and traffic signal |
| TWI422078B (en) * | 2009-10-29 | 2014-01-01 | Samsung Electro Mech | Heat radiating structure and method for manufacturing the same |
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2002
- 2002-08-15 TW TW091118505A patent/TWI220282B/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8382345B2 (en) | 2005-06-07 | 2013-02-26 | Fujikara Ltd. | Porcelain enamel substrate for mounting light emitting device and method of manufacturing the same, light emitting device module, illumination device, display unit and traffic signal |
| TWI422078B (en) * | 2009-10-29 | 2014-01-01 | Samsung Electro Mech | Heat radiating structure and method for manufacturing the same |
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