CN102051151A - Liquid adhesive composition of semiconductor device and semiconductor device using the same - Google Patents
Liquid adhesive composition of semiconductor device and semiconductor device using the same Download PDFInfo
- Publication number
- CN102051151A CN102051151A CN2010101387117A CN201010138711A CN102051151A CN 102051151 A CN102051151 A CN 102051151A CN 2010101387117 A CN2010101387117 A CN 2010101387117A CN 201010138711 A CN201010138711 A CN 201010138711A CN 102051151 A CN102051151 A CN 102051151A
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- China
- Prior art keywords
- binding compositions
- epoxy
- resins
- semiconductor wafer
- liquid binding
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- 0 CC(C1)CC2C1C(C)*C2C Chemical compound CC(C1)CC2C1C(C)*C2C 0.000 description 2
- UJEZLEGLGURWEP-UHFFFAOYSA-N CC1=CC=[I]C=C1 Chemical compound CC1=CC=[I]C=C1 UJEZLEGLGURWEP-UHFFFAOYSA-N 0.000 description 1
- GHBCNSOLJONETO-UHFFFAOYSA-N CCC1C=CC(c2ccc(CC)cc2)=CC1 Chemical compound CCC1C=CC(c2ccc(CC)cc2)=CC1 GHBCNSOLJONETO-UHFFFAOYSA-N 0.000 description 1
- JRLPEMVDPFPYPJ-UHFFFAOYSA-N CCc1ccc(C)cc1 Chemical compound CCc1ccc(C)cc1 JRLPEMVDPFPYPJ-UHFFFAOYSA-N 0.000 description 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Cc1ccccc1 Chemical compound Cc1ccccc1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
- C09J163/04—Epoxynovolacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Abstract
The invention provides a liquid adhesive composition of a semiconductor device and a semiconductor device using the same. The liquid adhesive composition of a semiconductor device comprises an epoxy resin having a softening point of 50 EDG or higher, a firming agent, a solvent which dissolves the epoxy resin and the firming agent and has a boiling point of 150 DEG or higher, and a polymer resin which is capable of having a cure reaction with the epoxy resin and/or the firming agent and has a molecular weight of 1,000-50,000. With the arrangement of a semiconductor chip which forms an adhesive film through coating the adhesive composition on the back face of the semiconductor chip, the adhesive composition has good room temperature stability, good adhesive power and mechanical strength.
Description
Technical field
The present invention relates to a kind of liquid binding compositions that in producing semiconducter device, is used for forming bonding film at the back side of semiconductor wafer.
Background technology
Usually, semiconducter device (or semiconductor package part) manufacture method comprises semi-conductor chip (nude film, single cutting process die) (or singulation cutting technique, sawing-singulation process) that is used for semiconductor wafer is cut into predetermined size; Be used for semi-conductor chip is attached to chip attachment process (chip attaching process) on the circuit card; Be used for semi-conductor chip being electrically connected to the wire bonding technique (wirebonding process) of circuit card by means of the conductive bond line; And be used for semi-conductor chip is avoided the molding process of external environment influence with resin molded material seal to protect them.
The traditional die attachment process is that the semi-conductor chip that will singly cut is pressed on the circuit card of the tackiness agent that has coating thereon.Usually use the resin paste-type adhesive of Resins, epoxy for example or film adhesive as the jointing material that is used for chip attachment herein.
Yet such chip attachment process causes workability and productivity to reduce.Consider these problems, before singly cutting, used the technology that on the back side of semiconductor wafer, mounts bonding film recently.That is, bonding film is mounted on the back side of semiconductor wafer, the semiconductor wafer list is cut into semi-conductor chip, then semi-conductor chip is mounted on the circuit card, thereby cause the improvement of workability and productivity.
Yet according to above-mentioned technology, therefore the bonding film (film-type adhesive product) of preparation exists limitation, because the thickness of bonding film should change according to the type and the application of semiconductor package part before using.In this respect, proposed a kind of technology, wherein tackiness agent be applied to pre-determined thickness on the back side of semiconductor wafer, the semiconductor wafer list has been cut into semi-conductor chip, and with these chip attachment to circuit card.
With the traditional technology of adhesive coated on the back side of semiconductor wafer can be gluing process, silk-screen printing technique etc.Yet such coating process existing problems because when semiconductor wafer greatly the time, tackiness agent may not can evenly be coated with, and have less thickness and during than major diameter, semiconductor wafer may break in the adhesive coated process when semiconductor wafer.
Usually, the requirement that tackiness agent on the back surface of semiconductor wafer should satisfy is enough to the room temperature stability that viscosity (rheology) in use do not change is coated in searching, and have thereon bonding film semiconductor wafer cutting or pick up (pick up) process mesopodium and take place and stratified adhesive power and physical strength to prevent breaking of bonding film.
Therefore, be necessary to develop a kind of tackiness agent with good room temperature stability, adhesive power and physical strength, and a kind of size (thickness, diameter etc.) that does not rely on wafer and with the method for this adhesive coated on semiconductor wafer.
Summary of the invention
[purpose of the present invention]
The invention provides a kind of liquid binding compositions that is used for semiconducter device, it is coated on the back side of semiconductor wafer, have good room temperature stability, adhesive power and physical strength, and a kind of by using the semiconducter device of this liquid state binding compositions preparation.
[technical scheme of the present invention]
According to an aspect of the present invention, provide a kind of liquid binding compositions that is used for semiconducter device, having comprised: Resins, epoxy with 50 ℃ or higher softening temperature; Solidifying agent; Dissolve this Resins, epoxy and solidifying agent and have the solvent of 150 ℃ or higher boiling point; And can and have the fluoropolymer resin of 1,000～50,000 molecular weight with Resins, epoxy and/or solidifying agent generation curing reaction.
Because 1,000～50,000 molecular weight is so fluoropolymer resin exists with liquid state.
This liquid state binding compositions can use spin coating proceeding (spin casting process) to be applied on the back side of semiconductor wafer.
According to a further aspect in the invention, provide a kind of semiconductor wafer that comprises bonding film, bonding film wherein forms by using spin coating proceeding above-mentioned liquid binding compositions to be applied on the back side of this wafer.
According to a further aspect of the invention, provide a kind of semiconducter device, it comprise by the nude film that cuts the preparation of above-mentioned semiconductor wafer (punch die, die).
[effect of the present invention]
As mentioned above, liquid binding compositions of the present invention comprises the Resins, epoxy with 50 ℃ or higher softening temperature and has the solvent of 150 ℃ or higher boiling point.Therefore, said composition does not change on viscosity (rheology), therefore, at room temperature can show satisfactory stability.
And, the use of above-mentioned solvent makes might give suitable volatility and viscosity to composition of the present invention, thereby make said composition can use spin coating proceeding to be applied on the back side of semiconductor wafer, no matter make and the thickness and the diameter of semiconductor wafer all can easily form bonding film.
In addition, composition of the present invention comprises having 1,000-50, the fluoropolymer resin of 000 molecular weight.Therefore, the bonding film that forms on the back side of semiconductor wafer can have excellent mechanical intensity.
Embodiment
Below, the present invention will be described in more detail.
Liquid binding compositions of the present invention (hereinafter to be referred as making " binding compositions ") comprises Resins, epoxy, solidifying agent, dissolve this Resins, epoxy and solidifying agent solvent and can with the fluoropolymer resin of Resins, epoxy and/or solidifying agent generation curing reaction.
Resins, epoxy used herein has 50 ℃ or higher softening temperature.Therefore, when the binding compositions that will comprise this Resins, epoxy is applied on the back surface of semiconductor wafer, the bonding film that obtains is stable existence at room temperature, thereby even in the standing storage process, also can guarantee semiconductor wafer be easy to handle good reliability with semiconductor wafer.
At room temperature, the semiconductor wafer that has bonding film on the back side is divided into single nude film by single cutting process, and these nude films are mounted on the circuit card.Before single cutting process, use spin coating proceeding to be coated with this bonding film and dry with except that desolvating, PSA (pressure sensitive adhesive or pressure sensitive adhesive) film can be mounted on the bonding film to support this bonding film then.Before being mounted on circuit card, nude film should remove the PSA film.At this moment, if Resins, epoxy has unsuitable softening temperature, bonding film potentially unstable at room temperature then, and, therefore cause the nude film defective to increase owing to the strongly adherent between PSA film and bonding film makes the PSA film to remove effectively.
Yet Resins, epoxy of the present invention has 50 ℃ or higher softening temperature, thereby bonding film at room temperature can stable existence.Therefore, can be easily remove the PSA film, thereby even guaranteed in the prolonged preservation process also the good reliability of process semiconductor wafers and semiconductor wafer easily from the bonding film of semiconductor wafer.
Resins, epoxy is not particularly limited, as long as it has 50 ℃ or higher softening temperature.The group that this Resins, epoxy can select the phenol aldehyde type solid epoxy of free style 1 or formula 2 expressions to form.If the softening temperature of Resins, epoxy is too high, then it may be difficult to guarantee the enough adhesive powers between nude film and circuit card.Aspect this, Resins, epoxy can have 50～150 ℃ softening temperature.
＜formula 1 〉
(in formula 1, n is 1～5 natural number, R
1Be H, CH
3Or CH
2CH
3, and R
2Be H, CH
3, CH
2CH
3Or
)
＜formula 2 〉
(in formula 2, m is 1～5 natural number, R
3Be H, CH
3Or CH
2CH
3, R
4Be H, CH
3, CH
2CH
3Or
And R
5Be CH
2,
Or
)
Resins, epoxy may further include solid or the liquid epoxies that is selected from BPA (bisphenol A-type), BPF (Bisphenol F type), naphthalene, alicyclic and amido polyfunctional epoxy resin, with by regulating second-order transition temperature (Tg) or improving the physicals that modulus provides improvement.
Based on the binding compositions of 100 weight parts, Resins, epoxy can use with the amount of 20 to 80 weight parts.If the content of Resins, epoxy is less than 20 weight parts, then the speed of response of binding compositions may reduce, thereby causes the longer treatment time, causes workability to reduce.On the other hand, if the content of Resins, epoxy surpasses 80 weight parts, then be coated on bonding film on the back side of semiconductor wafer potentially unstable when at room temperature existing.
Solidifying agent is not particularly limited as used in this article, but can be resol.Especially, this resol can be selected from the group of being made up of the poly-resol of following formula 3 expressions:
＜formula 3 〉
In formula 3, n is 1～5 natural number, R
1Be H, CH
3Or CH
2CH
3, R
2Be H, CH
3, CH
2CH
3Or
And R
3Be CH
2,
Or
Based on the binding compositions of 100 weight parts, solidifying agent can use with the amount of 5-60 weight part.If the content of solidifying agent is lower than 5 weight parts, then may be difficult to realize the physicals of bonding film expectation.On the other hand, if the content of tackiness agent surpasses 60 weight parts, then the content of Resins, epoxy reduces relatively, thereby speed of response may reduce, thereby causes the longer treatment time.
Solvent is used for solid matter (for example Resins, epoxy and solidifying agent) is dissolved into liquid state, and has 150 ℃ or higher, preferred 150～300 ℃ boiling point.If the boiling point of solvent is lower than 150 ℃, the room temperature stability and the physicals that then are used for spin coating may reduce.On the other hand, if the boiling point of solvent surpasses 300 ℃, then can make the reliability of technology after the spin coating to reduce owing to residual solvent.The binding compositions of the present invention that comprises the solvent that satisfies above-mentioned requirements can have enough room temperature stabilities, makes that viscosity (rheology) does not change during use, and has guaranteed to use on the back side that is spin-coated on semiconductor wafer to be easy to form bonding film.
As being used for binding compositions is applied to traditional method on the semiconductor wafer, a glue, silk screen printing etc. are arranged.Yet, these methods existing problems, for example inhomogeneous formation bonding film and use thin and than the situation of narrow semiconductor wafer under the destruction of semiconductor wafer.
Yet under the situation of spin coating, bonding film forms in the following manner, is about to central zone, coating, dry and curing, high speed rotating semiconductor wafer simultaneously that binding compositions is applied to semiconductor wafer.Thereby no matter the thickness and the diameter of semiconductor wafer can easily form bonding film.It should be suitably volatile being included in the solvent that is used for using spin-coating method to form the binding compositions of bonding film on semiconductor wafer.Solvent used herein has 150 ℃ or higher, preferred 150～300 ℃ boiling point, thereby have volatility, make the bonding film that uses spin-coating method to form have good adhesive power and film uniformity.
That is, binding compositions of the present invention can use spin coating proceeding to form bonding film on the back side of semiconductor wafer.At length, when using spin coating proceeding to form bonding film, requirement is in rotary course, seldom solvent evaporates should take place to form uniform bonding film, and in drying process, enough solvent evaporates should take place so that the bonding film that obtains mounts on the nude film fully, thereby cause can not occurring for example stratified defective in technological process subsequently.In this respect, the boiling point of the solvent of use is a key factor.
For viscosity and the coating thickness of suitably regulating binding compositions according to the application (for example semiconductor wafer) and the performance of expectation, based on the binding compositions of 100 weight parts, solvent can use with the amount of 2-90 weight part as used in this article.
Solvent is not particularly limited, as long as it has 150 ℃ or higher boiling point.For example can use solvent based on lactone, based on the solvent of lactan, based on solvent of acetate etc.Especially, the preferred environmentally friendly solvent that is selected from the group of forming by gamma-butyrolactone (GBL), diethylene glycol ether acetate alone (ECA) and the diethylene glycol monobutyl ether acetic ester (BCA) of following formula 4 expressions that uses.
＜formula 4 〉
Fluoropolymer resin used herein is responsible for and Resins, epoxy and/or solidifying agent generation curing reaction, and the bonding film that is formed by the binding compositions of the present invention that comprises such fluoropolymer resin can show excellent mechanical intensity.Promptly, fluoropolymer resin of the present invention has 1,000～50,000 molecular weight, thereby make it possible to prepare uniform binding compositions, with the uniform bonding film of formation in drying process, and the physical strength that strengthens this bonding film, thereby cause for easier cutting of semiconductor wafer and pick-up process.In addition, the binding compositions of the present invention that comprises such fluoropolymer resin can have low modulus and appropriate toughness in solidification process.
Routinely, the film-type tackiness agent is mounted on the back side of semiconductor wafer, the semiconductor wafer list is cut into the nude film with binder layer, and these nude films are mounted on the circuit card, thereby cause for the workability of semiconducter device manufacturing and the improvement of productivity.According to this method, use film stream to mould technology and make binding compositions form fexible film.Herein, flexible polymer (solid-state) is dissolved in has in the more lower boiling solvent and use, thereby give thin film flexible with the form of caking agent.
On the contrary, use spin coating proceeding that binding compositions of the present invention is formed bonding film.Has the tackiness agent that obtains in the more lower boiling solvent when carrying out spin coating when using by flexible polymer is dissolved in, carrying out along with spin coating proceeding, precipitation rather than dissolving take place in the polymer bonding agent, thereby the polymer phase separation takes place, thereby cause the pollution to bonding film.
Binding compositions of the present invention comprises that having molecular weight is 1,000～50,000 liquid polymerization resin, thereby can not be separated in the spin coating process.In addition, the solvent of this fluoropolymer resin and use has good consistency.When binding compositions of the present invention solidified, the combination of Resins, epoxy, solidifying agent and solvent was used as caking agent, thereby makes the bonding film that obtains have suitable support strength.Fluoropolymer resin of the present invention evenly is present in the binding compositions, thereby makes the film that obtains have excellent mechanical intensity and appropriate toughness when this binding compositions solidifies.
Fluoropolymer resin is not particularly limited, but can comprise can with the carboxylic group of Resins, epoxy and/or solidifying agent generation curing reaction (COOH) or oh group (OH).For example, fluoropolymer resin can be selected from the group by acrylonitrile butadiene rubber (CTBN), polyester polyol, polycaprolactone, phenoxy resin and the acrylic resin formation of carboxy blocking.
Based on the binding compositions of 100 weight parts, fluoropolymer resin can use with the amount of 1-50 weight part.If the content of fluoropolymer resin is lower than 1 weight part, then the toughness of bonding film may be not enough, thereby cause the cutting technique of difference.On the other hand, if the content of fluoropolymer resin surpasses 50 weight parts, then speed of response may reduce, thereby causes the longer treatment time.
Except above-mentioned Resins, epoxy, solidifying agent, solvent and fluoropolymer resin, binding compositions of the present invention can further contain curing catalyst with the acceleration curing reaction, thereby causes workability to improve.Curing catalyst is not particularly limited, but can be selected from potential curing catalyst (latent curing accelerator) as amine, imidazoles, amine affixture and imidazoles affixture.Also can use utilization at room temperature have good stability thermoplastic resin encapsulates curing catalyst or with curing agent modified curing catalyst.
If it is excessive that curing catalyst uses, then the package stability of binding compositions may reduce.On the other hand, if curing catalyst uses with amount very little, then curing reaction may reduce, thereby workability and productivity reduce.Aspect this, based on the binding compositions of 100 weight parts, curing catalyst can use with the amount of 0.1-20 weight part.
Binding compositions of the present invention may further include flow agent, so that the bonding film that obtains has the flat surface that is enough to support by the nude film of dicing tape, can not occur smear metal in the semiconductor process wafer of bonding film and disorderly flies so that have on it in cutting.If necessary, binding compositions of the present invention may further include other additive as the defoamer that is used to be easy to defoam, the tinting material that is used for better outward appearance such as carbon black, be used for better mechanical property and adhering silane coupling agent such as glycidoxypropyltrimewasxysilane, and the fused silica that is used to improve thixotropic property and formability, as long as purpose of the present invention is not had harmful effect.
In order to help spin coating, binding compositions of the present invention can have in the time of 25 ℃ 10～50, and 000cPs is preferred 1,000～30, the viscosity of 000cPs.Although viscosity can change according to the requirement of the semiconducter device that obtains,, during 000cPs, then may be difficult to regulate the thickness of bonding film if viscosity is lower than 10cPs or is higher than 50.
Binding compositions can have 0.7～1.3, preferred 0.9～1.1 thixotropy index (T/I).In the spin coating proceeding process, fringe region moment of torsion may occur more frequently than the central zone.Therefore, use binding compositions may cause between the center and peripheral zone of the bonding film that obtains to have different thickness away from 1 T/I value.
Can simultaneously or introduce Resins, epoxy, solidifying agent, solvent, fluoropolymer resin, curing catalyst and other additive that uses in the binding compositions of the present invention according to priority, and can stir, mix or disperse, if necessary, heating simultaneously.Herein, solid epoxy and solid curing agent can use with the state that is dissolved in the solvent.Stir, mix or disperse the equipment of these components to be not particularly limited being used to, stir and the mixing and blending machine of heating function, three-roll grinder, ball mill, vacuum chamber, planetary stirrer etc. but can use to have.These equipment also can be used with suitable combination.
The present invention also provides a kind of semiconductor wafer, it comprises by using spin coating proceeding that above-mentioned liquid binding compositions is applied and be coated on the bonding film that forms on this chip back surface, and a kind of semiconducter device, it is prepared as follows: be mounted on the circuit card by cutting the nude film that above-mentioned semiconductor wafer obtains, subsequently by wire-bonded and molded and shaped.Herein, the formation of the bonding film on the back surface of semiconductor wafer can be implemented in such a way, promptly use spin coating proceeding with binding compositions apply, leveling and being coated on the back side of semiconductor wafer, and 100～160 ℃ dry 3 minutes or shorter down.The semiconductor die that has binder layer on its that the semiconductor wafer list that has bonding film on it is cut and will be obtained is mounted on the circuit card, solidified 30-90 minute down at 100～160 ℃, carry out wire-bonded and molded and shaped, solidified 1～3 hour at 160～190 ℃ then, thus the semiconducter device (packaged piece) of preparation expectation.Herein, in order to obtain the ideal thickness of bonding film, in the spin coating proceeding process, the speed of rotation of semiconductor wafer can be carried out different changes according to using (for example semiconductor wafer) with the time.
Hereinafter, will describe the present invention with reference to following examples, but the present invention is not limited to this.
[embodiment 1 and 2]
1-1. the binding compositions that preparation is assessed with dried solvent
Form the uniform liquid state in the solvent in order to determine whether Resins, epoxy or solidifying agent are dissolved in, each component that provides in mixing and the stirring following table 1 is with the preparation binding compositions.
1-2. be formed for assessing the bonding film of coating performance
In order to estimate the coating performance of the composition that in part 1-1, prepares, these compositions (each 5ml) are applied to the central zone of 8 inches semiconductor wafers, under 3500rpm, continue to carry out spin coating in 60 seconds so that these composition coating semiconductor chips, and 140 ℃ of dryings 3 minutes to form bonding film.
[comparative example 1-6]
Prepare binding compositions and bonding film in the mode identical, the component and the content that provide in the following table 1 only are provided with embodiment 1.
＜table 1 〉
[experimental example 1] solvent evaluation
To embodiment 1 and 2 and comparative example 1-6 in the binding compositions and the film that prepare, detect viscosity and variation in thickness according to following method, and will the results are summarized in following table 2.
1) viscosity: use cone-plate type Brookfield viscometer, 25 ℃ of viscosity that detect each composition down.Herein, viscosity is to by Resins, epoxy or solidifying agent are dissolved in the detected value of the composition that obtains in the solvent.In the table 2, " NG " represents that this sample is unsuitable for detecting viscosity.
2) variation in thickness: use profiler to detect the thickness of the bonding film that on the back side of semiconductor wafer, forms.Based on estimate the variation in thickness of each bonding film to get off: good (OK); ± 5% or higher, defective (NG); Do not detect (-).
＜table 2 〉
| Project | Embodiment 1 | Embodiment 2 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 |
| Viscosity (cps) | ?100,000? | 80,000? | NG? | NG? | 50,000? | 20,000? | NG? | 30,000? |
| Variation in thickness | ?OK? | OK? | -? | -? | NG? | NG? | -? | OK? |
According to the result of table 2, GBL has best result for viscosity and variation in thickness.
Use the comparative example 1 and 2 of n-dodecane, because undissolved Resins, epoxy or solidifying agent, viscosity can't detect.Use the comparative example 5 and 6 of propylene carbonate, dissolved as the phenol resins of solidifying agent, but not dissolving of Resins, epoxy.
Use the comparative example 3 and 4 of PGMEA,, detect lower viscosity, the feasible amount that can reduce the solvent of use although Resins, epoxy or solidifying agent are dissolved.Yet, because lower boiling point (145 ℃), so solvent evaporation takes place in the spin coating process, thereby cause the precipitation of Resins, epoxy or solidifying agent, cause uneven film.
[embodiment 3 and comparative example 7-9]
The component that provides in mixing and the stirring following table 3 is with the preparation binding compositions.These compositions (each 5ml) are applied to the central zone of 8 inches semiconductor wafers, under 3500rpm, continue to carry out spin coating in 60 seconds so that these composition coating semiconductor chips, and 140 ℃ of dryings 3 minutes to form the bonding film of thickness 40 μ m.
＜table 3 〉
The evaluation of the physicals of [experimental example 2] semiconductor wafer
Physicals to the semiconductor wafer for preparing among embodiment 3 and the comparative example 7-9 is carried out following evaluation, and will the results are summarized in the following table 4.
1) bonding cutting film (dicing film): will cut rete and be pressed onto on the semiconductor wafer that has bonding film on it, and the technology that this semiconductor wafer is cut and picks up, so singly cutting in the process, determine between cutting film and bonding film, whether to bond.Evaluation of result is as follows: " OK " (not observing bonding); " NG " (observing bonding).
2) bonding line of cut: will cut rete and be pressed onto on the semiconductor wafer that has bonding film on it, and the technology that this semiconductor wafer is cut and picks up.So singly cutting in the process, determine whether bonding takes place or on line of cut, whether exist residual along the line of cut of cutting film.Evaluation of result is as follows: " OK " (not observing bonding or residual); " NG " (observing bonding or residual).
3) pick up: when semiconductor wafer carries out pick-up process, test pin height (height of cutting film lower surface).Evaluation of result is as follows: OK (to not infringement of chip)
4) reliability: the nude film that has binder layer on it is mounted on the circuit card and solidify (125 ℃ following 1 hour, following 2 hours at 175 ℃ then) to obtain laboratory sample.These samples are according to JEDEC, JESD22-A113, and Level 3 pre-treatment detect by C-SAM then and are with or without layering.Evaluation of result is as follows: " OK " (not having layering); Not "-" (not detecting).
5) Young's modulus: binding compositions is applied on the release board, 140 ℃ dry 3 minutes and solidified 1 hour down down at 125 ℃, solidified 2 hours down and obtain being of a size of the film of 5mm (wide) * 8mm (length) * 0.2mm (thick) at 175 ℃ then.By the dynamic mechanical analysis under 1Hz (DMA), detect the Young's modulus of this film.
＜table 4 〉
| Project | Embodiment 3 | Comparative example 7 | Comparative example 8 | Comparative example 9 |
| Bonding cutting film | OK? | OK? | OK? | NG? |
| The bonding line of cut | OK? | NG? | NG? | NG? |
| Pick up | OK? | NG? | NG? | NG? |
| Reliability | OK? | -? | -? | -? |
| Young's modulus (200 ℃, MPa) | 4? | 3? | 9? | 2.5? |
According to the result of table 4, in all projects, show the result of excellence according to the bonding film of the embodiment of the invention 3.On the other hand, about the bonding film of comparative example 7, owing to use the Resins, epoxy of the softening temperature with 45 ℃, stability at room temperature reduces.Therefore, bonding film is subjected to the heat that produces and melts in the cutting technique process, thereby causes being bonded to line of cut, causes the harmful effect to pick-up process.
About the bonding film of comparative example 8, owing to lack fluoropolymer resin, the physical strength of bonding film reduces.Therefore, break in the cross section of bonding film in the cutting technique process, thereby cause the line of cut variation and to the harmful effect of pick-up process and reliability.About the bonding film of comparative example 9, owing to use excessive fluoropolymer resin, so even bonding film also exists with the state of being clamminess after curing.Therefore, bonding film is bonded on the cutting film, thereby causes the harmful effect to singly cutting.
Claims (11)
1. liquid binding compositions that is used for semiconducter device, described composition comprises:
Resins, epoxy with 50 ℃ or higher softening temperature;
Solidifying agent;
Be used to dissolve described Resins, epoxy and described solidifying agent and have the solvent of 150 ℃ or higher boiling point; And
Can and have the fluoropolymer resin of 1,000～50,000 molecular weight with described Resins, epoxy and/or described solidifying agent generation curing reaction.
2. liquid binding compositions according to claim 1, wherein, described Resins, epoxy is selected from the group that is made of following formula 1 or 2 phenol aldehyde type epoxy resins of representing:
＜formula 1 〉
In formula 1, n is 1～5 natural number, R
1Be H, CH
3Or CH
2CH
3, and R
2Be H, CH
3, CH
2CH
3Or
＜formula 2 〉
In formula 2, m is 1～5 natural number, R
3Be H, CH
3Or CH
2CH
3, R
4Be H, CH
3, CH
2CH
3Or
And R
5Be CH
2,
3. liquid binding compositions according to claim 1, wherein, described solidifying agent is selected from the group that the poly-resol by following formula 3 expression constitutes:
＜formula 3 〉
In formula 3, n is 1～5 natural number, R
1Be H, CH
3Or CH
2CH
3, R
2Be H, CH
3, CH
2CH
3Or
And R
3Be CH
2,
4. liquid binding compositions according to claim 1, wherein, described solvent is selected from the group that is made of the gamma-butyrolactone (GBL) of following formula 4 expressions, diethylene glycol ether acetate alone (ECA) and diethylene glycol monobutyl ether acetic ester (BCA):
＜formula 4 〉
5. liquid binding compositions according to claim 1, wherein, described fluoropolymer resin is selected from the group that is made of carboxyl-terminated butadiene acrylic-nitrile rubber (CTBN), polyester polyol, polycaprolactone, acrylic resin and phenoxy resin.
6. liquid binding compositions according to claim 1, wherein, based on the described liquid binding compositions of 100 weight parts, described Resins, epoxy, described solidifying agent, described solvent and described fluoropolymer resin use with the amount of 20-80 weight part, 5-60 weight part, 2-90 weight part and 1-50 weight part respectively.
7. liquid binding compositions according to claim 1 further comprises curing catalyst.
8. liquid binding compositions according to claim 1, wherein, the range of viscosities of described composition is 10-50,000cPs down at 25 ℃.
9. according to each described liquid binding compositions among the claim 1-8, described liquid binding compositions utilizes spin coating proceeding that it is coated on the back side of semiconductor wafer.
10. a semiconductor wafer comprises by be coated with the bonding film that forms according to each described liquid binding compositions among the claim 1-8 on the back side of described wafer with spin coating proceeding.
11. a semiconducter device comprises by cutting the nude film that semiconductor wafer according to claim 10 makes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20090106051A KR101202044B1 (en) | 2009-11-04 | 2009-11-04 | Liquid adhesive composition of semiconductor device and semiconductor device using the same |
| KR10-2009-0106051 | 2009-11-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102051151A true CN102051151A (en) | 2011-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010101387117A Pending CN102051151A (en) | 2009-11-04 | 2010-03-15 | Liquid adhesive composition of semiconductor device and semiconductor device using the same |
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| Country | Link |
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| KR (1) | KR101202044B1 (en) |
| CN (1) | CN102051151A (en) |
| TW (1) | TWI479001B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103980847A (en) * | 2014-05-21 | 2014-08-13 | 天津大学 | Self-curing polyacrylate-epoxy resin adhesive as well as preparation method and application of self-curing polyacrylate-epoxy resin adhesive |
| CN104004480A (en) * | 2013-02-22 | 2014-08-27 | 富葵精密组件(深圳)有限公司 | Sticky material, manufacturing method of sticky material and flexible printed circuit board |
| WO2017091974A1 (en) * | 2015-12-01 | 2017-06-08 | 3M Innovative Properties Company | B-stageable adhesive composition |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015093794A1 (en) * | 2013-12-19 | 2015-06-25 | 주식회사 엘지화학 | Composition for forming dicing film adhesive layer, and dicing film |
| KR101709689B1 (en) | 2013-12-19 | 2017-02-23 | 주식회사 엘지화학 | Dicing film adhesion layer composition and dicing film |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526740A (en) * | 2008-03-03 | 2009-09-09 | 东进世美肯株式会社 | Low-temperature curable photosensitive resin composition |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY148064A (en) * | 2006-10-30 | 2013-02-28 | Sumitomo Bakelite Co | Liquid resin composition, semiconductor wafer having adhesive layer, semiconductor element having adhesive layer, semiconductor package , process for manufacturing semiconductor element and process for manufacturing semiconductor package. |
| KR100943700B1 (en) | 2007-11-28 | 2010-02-23 | (주)에버텍엔터프라이즈 | Stage Epoxy Adhesive Composition Capable of A ccepting Variation Range in Stage Temperatures |
-
2009
- 2009-11-04 KR KR20090106051A patent/KR101202044B1/en active IP Right Grant
- 2009-12-30 TW TW098145846A patent/TWI479001B/en active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526740A (en) * | 2008-03-03 | 2009-09-09 | 东进世美肯株式会社 | Low-temperature curable photosensitive resin composition |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104004480A (en) * | 2013-02-22 | 2014-08-27 | 富葵精密组件(深圳)有限公司 | Sticky material, manufacturing method of sticky material and flexible printed circuit board |
| CN104004480B (en) * | 2013-02-22 | 2016-05-04 | 富葵精密组件(深圳)有限公司 | Sticky material and its preparation method and flexible PCB |
| CN103980847A (en) * | 2014-05-21 | 2014-08-13 | 天津大学 | Self-curing polyacrylate-epoxy resin adhesive as well as preparation method and application of self-curing polyacrylate-epoxy resin adhesive |
| CN103980847B (en) * | 2014-05-21 | 2015-11-25 | 天津大学 | Self cure Polyacrylic Ester and Epoxy Resin sizing agent and Preparation method and use |
| WO2017091974A1 (en) * | 2015-12-01 | 2017-06-08 | 3M Innovative Properties Company | B-stageable adhesive composition |
| CN108291129A (en) * | 2015-12-01 | 2018-07-17 | 3M创新有限公司 | Can second rank adhesive composition |
| CN108291129B (en) * | 2015-12-01 | 2021-12-31 | 3M创新有限公司 | B-stageable adhesive composition |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201116603A (en) | 2011-05-16 |
| KR101202044B1 (en) | 2012-11-16 |
| TWI479001B (en) | 2015-04-01 |
| KR20110049168A (en) | 2011-05-12 |
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Application publication date: 20110511 |