KR20110049168A - Liquid adhesive composition of semiconductor device and semiconductor device using the same - Google Patents

Abstract

PURPOSE: A liquid adhesive composition of a semiconductor device is provided to ensure enough normal temperature stability, excellent adhesive force and mechanical strength when applied to a backside of a semiconductor wafer. CONSTITUTION: A liquid adhesive composition of a semiconductor device includes an epoxy resin in which a softening point is 50 °C or more; a hardener; a solvent which dissolves the epoxy resin and hardener and has a boiling point of 150 °C or more; and a polymer resin with molecular weight of 1,000~50,000 reactive with a hardening material in which the epoxy resin, hardener and solvent are mixed.

Description

Liquid adhesive composition for semiconductor device and semiconductor device using same TECHNICAL FIELD {{LIQUID ADHESIVE COMPOSITION OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE USING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid adhesive composition for semiconductor devices used to form an adhesive layer on the back side of a semiconductor wafer in manufacturing a semiconductor device.

A semiconductor device (or semiconductor package) manufacturing process is generally a sawing and singulation process in which a semiconductor wafer is cut into a predetermined size and separated into a die (semiconductor chip). Chip attaching process for attaching to the wire, wire bonding process for electrically connecting the semiconductor chip and the wiring board using the conductive bonding wire, and molding to seal the semiconductor chip with the molding resin to protect the semiconductor chip from the external environment. (Molding) The process proceeds in sequence.

Here, conventionally, a method of compressing a singulated semiconductor chip in a state in which an adhesive is applied to a wiring board by the chip attaching process is used. At this time, a resin paste adhesive or film adhesive such as epoxy is generally used as the chip adhesive.

However, a method of attaching a semiconductor chip after applying an adhesive to a wiring board is poor in workability and productivity, and in recent years, after bonding a filmed adhesive product to the back surface of a manufactured semiconductor wafer before singulating the semiconductor wafer, By adhering the die in which the adhesive layer is present to the wiring board, the workability and productivity of semiconductor device manufacturing were improved.

However, the above method uses a pre-produced film (adhesive product), which limits the use of a film produced in a different thickness depending on the type of package and the application. A method of attaching a die having an adhesive layer to a wiring board has been proposed.

Here, the method of applying the adhesive on the back surface of the semiconductor wafer includes a dispensing method, a screen print method and the like. However, the coating methods have a drawback that it is difficult to uniformly apply an adhesive when the size of the semiconductor wafer is large, and when the thickness of the semiconductor wafer is thin and the diameter is large, the semiconductor wafer is broken in the process of forming the adhesive layer. There is this.

On the other hand, the adhesive applied to the backside of the semiconductor wafer should generally have sufficient room temperature stability so that the viscosity (the rheology) does not change during the period of use, and when the semiconductor wafer formed on the adhesive layer is sawed and picked up It should have good adhesion and mechanical strength to prevent cracking or peeling of the adhesive layer.

Therefore, there is a need for an adhesive having sufficient room temperature stability, good adhesion and mechanical strength, and a method for applying the adhesive without being restricted by the thickness and size of the semiconductor wafer.

The present invention is to solve the above problems, a liquid adhesive composition for a semiconductor device that can exhibit sufficient room temperature stability, excellent adhesion and mechanical strength as an adhesive composition applied to the back of the semiconductor wafer and a semiconductor device manufactured using the same It aims to provide.

The present invention is an epoxy resin having a softening point of at least 50 ℃ to achieve the above object; Curing agent; A solvent in which the epoxy resin and the curing agent are dissolved but a boiling point of 150 ° C. or more; And it provides a liquid adhesive composition for a semiconductor device comprising a polymer resin having a molecular weight of 1,000 ~ 50,000 that can react with the cured product is a mixture of the epoxy resin, the curing agent and the solvent.

The liquid adhesive composition for a semiconductor device may be applied to the back surface of a semiconductor wafer by spin casting.

On the other hand, the present invention provides a semiconductor wafer in which the liquid adhesive composition for a semiconductor device is applied to the rear surface by a spin casting method.

The present invention also provides a semiconductor device comprising a die manufactured by sawing the semiconductor wafer.

As described above, the liquid adhesive composition for a semiconductor device of the present invention may exhibit sufficient room temperature stability such that the viscosity (the rheology) does not change during the use period as it includes a solvent having a boiling point of 150 ° C. or more.

In addition, because of the solvent described above, the composition of the present invention exhibits appropriate volatility and viscosity to form an adhesive layer on the back surface of the semiconductor wafer by spin casting, so that the adhesive can be easily applied without being restricted by the thickness and diameter of the semiconductor wafer. A layer can be formed.

In addition, since the composition of the present invention includes a liquid polymer resin having a molecular weight of 1,000 to 50,000, the adhesive layer formed on the rear surface of the semiconductor wafer may have excellent mechanical strength.

Hereinafter, the present invention will be described in detail.

The liquid adhesive composition for a semiconductor device (hereinafter, referred to as an 'adhesive composition') of the present invention reacts with an epoxy resin, a curing agent, a solvent in which the epoxy resin and the curing agent are dissolved, and a cured product in which the epoxy resin, the curing agent, and the solvent are mixed. It includes a polymer resin which can be made.

The epoxy resin used in the present invention has a softening point of 50 ° C. or more, and when the adhesive composition containing the epoxy resin is applied to the back side of the semiconductor wafer to form an adhesive layer, the adhesive layer may be stably present even at room temperature. Therefore, the handling of the semiconductor wafer is easy, and the reliability of the semiconductor wafer can be ensured even when stored for a predetermined period.

Herein, the epoxy resin to be used is not particularly limited as long as the softening point is 50 ° C. or higher. Preferably, the epoxy resin may be selected from a novolac solid epoxy resin represented by Formula 1 or Formula 2 below. . However, when the softening point is too high, sufficient adhesive force may not come out when bonding the die, the softening point is preferably in the range of 50 ~ 150 ℃.

[Formula 1]

이다.)In Formula 1, n is 1 to 5, R ¹ is H, CH ₃ or CH ₂ CH ₃ , and R ² is H, CH ₃ , CH ₂ CH ₃ or

to be.)

[Formula 2]

이고, R⁵는 CH₂,

,

,

,

또는

이다.)(In Chemical Formula 2, m is 1 to 5, R ³ is H, CH ₃ or CH ₂ CH ₃ , and R ⁴ is H, CH ₃ , CH ₂ CH ₃ or

And R ⁵ is CH ₂ ,

,

,

,

or

to be.)

In addition, epoxy resins include BPA (bisphenol A type), BPF (bisphenol F type), naphthalene type, cyclo aliphatic type, for the purpose of improving the physical properties such as adjusting the glass transition temperature (Tg) or improving the modulus. Solid phase and liquid epoxy resins, such as an amine polyfunctional epoxy resin, can be mixed and used further.

On the other hand, the epoxy resin of the present invention is preferably included in the range of 20 to 80 parts by weight based on 100 parts by weight of the adhesive composition. If the epoxy resin is included in less than 20 parts by weight, the reaction rate of the adhesive composition is slowed down to reduce the workability as the process time increases, and if contained in excess of 80 parts by weight, the adhesive layer formed on the back surface of the semiconductor wafer is stably present at room temperature. This can be difficult.

Although the hardening | curing agent used for this invention is not specifically limited, It is preferable to use a phenol resin. Specifically, it is preferable to use polyphenol resin of the following general formula (3) among phenol resin.

(3)

이고, R³는 CH₂,

,

,

,

,

,

또는

이다.)(In Formula 3, n is 1 to 5, R ¹ is H, CH ₃ or CH ₂ CH ₃ , R ² is H, CH ₃ , CH ₂ CH ₃ or

R ³ is CH ₂ ,

,

,

,

,

,

or

to be.)

Such a curing agent of the present invention is preferably included in the range of 5 to 60 parts by weight based on 100 parts by weight of the adhesive composition. If less than 5 parts by weight of the curing agent may be difficult to obtain the physical properties for forming the adhesive film required by the present invention, if included in more than 60 parts by weight relative to the use content of the epoxy resin is relatively reduced the reaction time slows down the process time Because this can be long.

The solvent used in the present invention dissolves the raw material (for example, the epoxy resin and the curing agent) in a solid state while liquefying, and it is preferable to use a boiling point of 150 ° C or higher, specifically, 150 to 300 ° C. If the boiling point of the solvent is less than 150 ℃ room temperature stability and physical properties of the spin casting may be lowered, if it exceeds 300 ℃ because the reliability may be lowered by the residual solvent in the process of forming the adhesive film after spin casting. The adhesive composition of the present invention comprising such a solvent may have sufficient room temperature stability so that the viscosity (the rheology) does not change during the service period, and when the adhesive composition is applied by spin casting to the back side of the semiconductor wafer, formation of the adhesive layer is prevented. It can be done easily.

Here, in order to apply the adhesive composition to the semiconductor wafer, a dispensing method, a screen print method, and the like have been conventionally used, but these methods uniform the adhesive layer when the thickness of the semiconductor wafer is thin and the diameter is large. It is difficult to form and the problem that the semiconductor wafer is broken occurs.

However, in the spin casting method, after the adhesive composition is applied to the semiconductor wafer, the semiconductor wafer is rotated at high speed to form the adhesive layer, thereby easily forming the adhesive layer without any limitation on the thickness and diameter of the semiconductor wafer. The solvent contained in the adhesive composition for forming the adhesive layer on the semiconductor wafer by using the spin casting method should have a suitable volatility, the solvent used in the present invention has a boiling point of 150 ℃ or more, specifically 150 ~ 300 ℃ range Therefore, when the adhesive layer is formed by the spin casting method, it exhibits volatility to form a uniform adhesive layer with excellent adhesive strength. That is, the adhesive composition of the present invention can form an adhesive layer on the back surface of a semiconductor wafer by applying a spin casting method.

On the other hand, the solvent of the present invention is preferably selected in consideration of the polarity of the epoxy resin and the curing agent used to properly dissolve the epoxy resin and the curing agent. In other words, in order to form an adhesive layer having a uniform thickness on the back surface of the semiconductor wafer by using a spin casting method, the adhesive composition should have an appropriate viscosity. When the polarity of the solvent is different from the polarity of the epoxy resin and the curing agent, the solubility is lowered. The viscosity of the composition becomes high, because if the difference is too large, the epoxy resin and the hardener are not dissolved in the solvent at all. In addition, as the solubility is lowered, raw materials (epoxy resin, curing agent, binder, etc.) are precipitated from the solvent during spin casting so that the surface of the cured adhesive layer is not flat.

The solvent of the present invention may be included in an amount of 2 to 90 parts by weight in order to adjust the viscosity or the coating thickness to the application and required performance based on 100 parts by weight of the adhesive composition.

The solvent of the present invention is not particularly limited as long as the boiling point is 150 ° C. or higher, but lactone-based, lactam-based, acetate-based, etc. may be used, and specifically Gamma-Butyrolactone (GBL) of Chemical Formula 4 in terms of environmental friendliness, It is preferably selected from the group consisting of diethylene glycol monoethyl ether acetate (ECA) and diethylene glycol monobutyl ether acetate (BCA).

[Formula 4]

The polymer resin used in the present invention may react with the cured product in which the epoxy resin, the curing agent, and the solvent are mixed. As the polymer resin is included in the adhesive composition, the adhesive layer formed on the back surface of the semiconductor wafer has excellent mechanical strength. Can be represented. That is, the polymer resin of the present invention can easily perform the sawing and pickup process of the semiconductor wafer by increasing the mechanical strength of the adhesive layer is cured to form a uniform phase with the cured product in the liquid phase. In addition, the adhesive composition of the present invention may have a low modulus upon curing and exhibit appropriate toughness as it includes a polymer resin.

Conventionally, prior to singulating a semiconductor wafer, the filmed adhesive article is adhered to the back surface of the manufactured semiconductor wafer and then singulated to bond the die having the adhesive layer to the wiring board, thereby improving workability and productivity of semiconductor device manufacturing. An improvement technique was used, in which the film casting method was applied to film the adhesive composition for making the adhesive film into a flexible film. In this case, in the film casting method, in order to give flexibility to the film, a flexible polymer (solid state) was dissolved in a low boiling point solvent and used as a binder.

However, the adhesive composition used in the present invention is to form an adhesive layer by the spin casting method, and even in such a spin casting method, the polymer (solid state) is dissolved in a solvent having a low boiling point as a binder and used as a binder. The polymer binder (binder) of the solubility decreases as spin casting proceeds, causing precipitation to contaminate the adhesive layer due to phase separation of the polymer.

However, the adhesive composition of the present invention does not cause phase separation in the spin casting process as the liquid polymer resin is included, and compatibility with the solvent used in the present invention may be good. Here, the conventional binder role is to perform the role by showing the appropriate support strength as the cured product is mixed with the epoxy resin, the curing agent and the solvent of the present invention, the polymer resin is to form a uniform phase with the cured product, Accordingly, the adhesive composition of the present invention will have excellent mechanical strength and appropriate toughness.

The polymer resin is not particularly limited, but the molecular weight is 1,000 ~ 50,000 and preferably include a carboxyl group (-COOH), non-limiting examples of carboxyl terminated butadiene acrylonitrile (CTBN), It may be selected from the group consisting of polyester polyols, polycaprolactones and acrylics.

On the other hand, the polymer resin of the present invention is preferably included in the range of 1 to 50 parts by weight based on 100 parts by weight of the adhesive composition. If the polymer resin is included in less than 1 part by weight, the toughness of the adhesive layer may be insufficient, which may cause a defect in the sawing process, and when included in excess of 50 parts by weight, the reaction rate may be slowed, thereby increasing the process time.

The adhesive composition of the present invention may further include a curing accelerator to improve workability by increasing the curing reaction rate in addition to the epoxy resin, the curing agent, the solvent and the polymer resin. Although the hardening accelerator used is not specifically limited, It is preferable to use latent hardening accelerators, such as an amine type, an imidazole type, an amine adduct, or an imidazole type adduct. In addition, a curing accelerator which is encapsulated with a thermoplastic resin to increase room temperature stability and a curing accelerator modified with a curing agent may be used.

Here, when the curing accelerator is used in an excessive amount, the storage stability of the adhesive composition is deteriorated. On the other hand, when the curing accelerator is used in a small amount, the curing reaction rate may be slowed, resulting in poor workability and productivity. Therefore, the curing accelerator of the present invention is preferably included in the range of 0.1 to 20 parts by weight based on 100 parts by weight of the adhesive composition.

On the other hand, the adhesive composition of the present invention has a flat surface so that the strength that the dicing tape supports the die may be sufficient so that chip fly or the like does not occur while sawing the semiconductor wafer on which the adhesive layer is formed. The leveling agent may be further added. In addition, antifoaming agents for facilitating the removal of bubbles as needed within the scope of the present invention, colorants such as carbon black for product appearance, etc., glycidoxypropyl trimes for increasing mechanical properties and adhesion Other additives such as silane coupling agents such as oxy silane and fumed silica for improving thixotropy and formability may be further included.

The viscosity of the adhesive composition of the present invention is preferably 10 to 50,000 cPs, preferably 1,000 to 30,000 cps at 25 ℃ to facilitate spin casting. Although it may vary depending on the requirements of the semiconductor device to be manufactured, it is difficult to control the thickness of the adhesive layer formed when the viscosity of the adhesive composition is less than 10 cPs or exceeds 50,000 cPs during the spin casting operation.

In addition, the thixotropy index (T / I) of the adhesive composition is preferably 0.7 to 1.3, preferably 0.9 to 1.1. This is because the thickness of the coating film between the center and the edge may be different in the case of an adhesive composition in which the T / I is less than 1 because the torque is increased more toward the edge during the spin casting operation.

The adhesive composition of the present invention may be prepared by adding an epoxy resin, a curing agent, a solvent, a polymer resin, a curing accelerator, and an additive at the same time or sequentially for each raw material, and stirring, mixing, and dispersing while heating as necessary. At this time, in particular, when using a solid epoxy resin can be used in advance dissolved in a solvent. Here, the device for stirring, mixing and dispersing the mixture after the input of the raw material is not particularly limited, but a mixing grinder, a three-axis roll mill, a ball mill, a vacuum induction machine, a planetary mixer, etc. equipped with a stirring and heating device may be used. It is also possible to use a combination of the above devices as appropriate.

On the other hand, the present invention can provide a semiconductor wafer coated with the adhesive composition described above by a spin casting method on the back side, by bonding a die (die) prepared by sawing the semiconductor wafer to a substrate to perform a wire bonding and molding process It is possible to provide a semiconductor device manufactured through. At this time, the process of forming the adhesive layer on the back surface of the semiconductor wafer by applying the adhesive composition to the back surface of the wafer, and then planarized and coated by spin casting, dried and b-stage within 100 minutes at 100 ~ 160 ℃ It can be done through. The wafer rotation speed and time of spin casting can be varied to achieve the desired thickness of the adhesive layer, depending on the application.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to the following Examples.

[Examples 1 and 2]

1-1. Composition Preparation for Solvent Evaluation

In order to confirm that the epoxy resin or curing agent is dissolved in the solvent to form a uniform liquid phase, the composition was prepared by mixing and stirring the epoxy resin or curing agent in a solvent as shown in Table 1 below.

1-2. Adhesive layer formation for coating evaluation

In order to evaluate the coating property of the composition prepared above, 10 ml of the composition prepared above was applied to an 8-inch semiconductor wafer, and spin casted at 3500 rpm for 60 seconds to form an adhesive layer.

[Comparative Examples 1 to 6]

Except for applying the components shown in Table 1 and the content thereof, the composition and the adhesive layer forming process of Examples 1 and 2 were applied in the same manner.

TABLE 1

Composition Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Epoxy resin ¹⁾ multifuntional
Epoxy 100 - 100 - 100 - 100 - Hardener ²⁾ polyphenols - 100 - 100 - 100 - 100  menstruum GBL
(Boiling point: 244 ℃) 50 50 - - - - - - n-dodecane
(Boiling point: 214 ℃) - - 50 50 - - - - PGMEA
(Boiling point: 145 ℃) - - - - 50 50 - - Propylene carbonate
(Boiling point: 240 ℃) - - - - - - 50 50 Note 1) EPPN-501H, Nippon Kayaku
Note 2) H-4, MEIWA =

Test Example 1 Solvent Evaluation

The viscosity and thickness deviation of the compositions and adhesive layers prepared in Examples 1 to 2 and Comparative Examples 1 to 6 were measured in the following manner, and the results are shown in Table 2 below.

1) Viscosity: Measured at 25 ℃ using Cone & Plate Brookfield Viscometer. In this case, the measured viscosity is a viscosity measured after dissolving only an epoxy resin or a curing agent in a solvent.

2) Thickness deviation: Measure the thickness of the adhesive layer formed on the back side of the semiconductor wafer with a profiler. If the thickness deviation is good, 'OK', and if the thickness deviation is ± 5% or more, the spec out is 'NG'. '-' When not available.

TABLE 2

Composition Example 1 Example 2 Comparative Example 1 Comparative Example 2 Comparative Example 3 Comparative Example 4 Comparative Example 5 Comparative Example 6 Property evaluation
result Viscosity (cPs) 100,000 80,000 NG NG 50,000 20,000 NG 30,000 Adhesive layer
Thickness deviation OK OK - - NG NG - OK

As can be seen from the physical property evaluation results of Table 2, the solvent having the best results in the viscosity and thickness variation of the adhesive layer was GBL proposed in the present invention.

On the other hand, as can be seen in Comparative Examples 1 and 2 n-dodecane was not dissolved in the epoxy resin or curing agent was unable to measure the viscosity. In addition, as can be seen in Comparative Examples 5 and 6, the phenol resin as a curing agent may be dissolved, but the epoxy resin may not be melted. These results confirm that the polarity difference should be small with the solvent in which the epoxy resin and / or curing agent is used.

On the other hand, Comparative Examples 3 and 4 show a low viscosity even when dissolving the epoxy resin or curing agent to reduce the amount of solvent used, but since the boiling point of the solvent itself is low at 145 ° C., evaporation of the solvent occurs during spin casting, resulting in an epoxy resin or curing agent. As a result of the deposition of, it was confirmed that a problem occurs that the coating film was not uniform.

Example 3 and Comparative Examples 7 to 9

The adhesive compositions were prepared by mixing and stirring the respective raw materials by applying the ingredients and contents shown in Table 3 below. 10 ml of the adhesive composition prepared on the 8-inch semiconductor wafer was applied and then spin cast at 3500 rpm for 60 seconds to form an adhesive layer having a thickness of 40 μm.

TABLE 3

Composition Example 3 Comparative Example 7 Comparative Example 8 Comparative Example 9 Epoxy
Suzy ¹⁾ multifuntional epoxy (softening point 45 ℃) - 100 - - ²⁾ multifuntional epoxy (softening point 70 ℃) 100 100 100 Hardener ³⁾ biphenyl phenol 50 50 50 50 Hardening
accelerant ⁴⁾ tetraphenyl phosphonium tetraphenyl borate One One One One Polymer
Suzy ⁵⁾ CTBN 30 15 0 60 Leveling agent ⁶⁾ Fluorine-based surfactant 0.5 0.5 0.5 0.5 menstruum GBL 30 30 30 30 Note 1) EPPN-501H, Nippon Kayaku
Note 2) EPPN-502H, Nippon Kayaku
Note 3) MEH-7851S, MEIWA
Note 4) H-4, MEIWA
Note 5) TCI
Note 6) BYK-380N, BYK

Test Example 2 Evaluation of Physical Properties of Semiconductor Wafer

The physical properties of the semiconductor wafers prepared in Example 3 and Comparative Examples 7 to 9 were measured by the following method, and the results are shown in Table 4 below.

1) Surface fixation with dicing film: Dicing film lamination of the adhesive layer on which the semiconductor wafer with adhesive layer is formed, sawing and then picking up between the dicing film and the coating film in the process of singulation Determine if sticking occurs.

2) Sawing line line fixation: Sticking along the sawing line to the dicing film in the process of singling by picking up after dicing film lamination of sawing semiconductor wafer with adhesive layer. The presence of residues in the cross section along the sawing line.

3) Pick up: For pick up fixing, measure the defect by pin height pushing from the dicing film side.

4) Reliability Evaluation: 85/85 12hr After the simple reliability evaluation, measure the delamination with a die shear device.

5) Elastic modulus: 5mm (w) * 8mm (l) * 0.2mm (t) adhesive layer completely cured by applying adhesive composition to semiconductor wafer and curing at 125 ℃ for 1 hour and then curing at 175 ℃ for 2 hours. Measured DMA at 1 Hz.

TABLE 4

Composition Example 3 Comparative Example 7 Comparative Example 8 Comparative Example 9 Evaluation results Surface fixation with dicing film OK OK OK NG Sawing line OK NG NG NG Pick up OK NG NG NG Reliability evaluation OK - - - Elastic modulus
(200 ℃, Mpa) 4 3 9 2.5

As can be seen in the evaluation results of Table 4, the best results were shown according to the type of epoxy and the curing agent and the content of the polymer resin. On the other hand, Comparative Example 7 uses an epoxy resin having a softening point of 45 ° C., thus reducing room temperature stability. As a result, the adhesive layer formed by melting under the influence of heat generated during the sawing process melts, leading to sticking, resulting in poor pick-up. Caused.

On the other hand, in Comparative Example 8, since the mechanical strength of the adhesive layer is weakened because the polymer resin is not included, the cross section is broken during the sawing process, resulting in a failure of the sawing line, and the pick-up process and reliability are also deteriorated. I could confirm it. On the other hand, in Comparative Example 9, the polymer resin was excessively contained, and thus the tacky property remained even after the adhesive layer was cured, and thus it was confirmed that a problem occurred during singulation due to sticking with the dicing film. .

Claims (11)

An epoxy resin having a softening point of 50 ° C. or higher; Curing agent; A solvent in which the epoxy resin and the curing agent are dissolved but a boiling point of 150 ° C. or more; And Liquid adhesive composition for a semiconductor device comprising a polymer resin having a molecular weight of 1,000 ~ 50,000 that can react with the cured product is a mixture of the epoxy resin, the curing agent and the solvent. The method of claim 1, The epoxy resin is a liquid adhesive composition for a semiconductor device, characterized in that the novolac epoxy resin represented by the following formula (1) or (2). [Formula 1]

In Formula 1, n is 1 to 5, R ¹ is H, CH ₃ or CH ₂ CH ₃ , and R ² is H, CH ₃ , CH ₂ CH ₃ or

to be.) [Formula 2]

(In Chemical Formula 2, m is 1 to 5, R ³ is H, CH ₃ or CH ₂ CH ₃ , and R ⁴ is H, CH ₃ , CH ₂ CH ₃ or

And R ⁵ is CH ₂ ,

,

,

,

or

to be.) The method of claim 1, The curing agent is a liquid adhesive composition for a semiconductor device, characterized in that the polyphenol resin represented by the following formula (3). (3)

(In Formula 3, n is 1 to 5, R ¹ is H, CH ₃ or CH ₂ CH ₃ , R ² is H, CH ₃ , CH ₂ CH ₃ or

R ³ is CH ₂ ,

,

,

,

,

,

or

to be.) The method of claim 1, The solvent is a liquid adhesive composition for a semiconductor device, characterized in that selected from the group consisting of Gamma-Butyrolactone (GBL), Diethylene glycol monoethyl ether acetate (ECA) and Diethylene glycol monobutyl ether acetate (BCA) represented by the following formula (4). [Formula 4]

The method of claim 1, The polymer resin is a liquid adhesive composition for semiconductor devices, characterized in that selected from the group consisting of carboxyl terminated butadiene acrylonitrile (CTBN), polyester polyol, polycaprolactone and acrylic. The method of claim 1, Based on 100 parts by weight of the liquid adhesive composition for a semiconductor device, 20 to 80 parts by weight of the epoxy resin; 5 to 60 parts by weight of the curing agent; 2 to 90 parts by weight of the solvent; And Liquid adhesive composition for a semiconductor device comprising 1 to 50 parts by weight of the polymer resin. The method of claim 1, Liquid adhesive composition for a semiconductor device further comprising a curing accelerator. The method of claim 1, The viscosity of the liquid adhesive composition is a liquid adhesive composition for a semiconductor device, characterized in that 10 ~ 50,000cPs at 25 ℃. The liquid adhesive composition of claim 1, wherein the liquid adhesive composition of claim 1 is applied to the back surface of the semiconductor wafer by spin casting. A semiconductor wafer, wherein the liquid adhesive composition according to any one of claims 1 to 8 is applied to the back side by spin casting. A semiconductor device comprising a die manufactured by sawing the semiconductor wafer of claim 10.