CN102027154B - 溅射方法 - Google Patents

溅射方法 Download PDF

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Publication number
CN102027154B
CN102027154B CN2009801169298A CN200980116929A CN102027154B CN 102027154 B CN102027154 B CN 102027154B CN 2009801169298 A CN2009801169298 A CN 2009801169298A CN 200980116929 A CN200980116929 A CN 200980116929A CN 102027154 B CN102027154 B CN 102027154B
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China
Prior art keywords
output
switching
target
circuit
short
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CN2009801169298A
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English (en)
Chinese (zh)
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CN102027154A (zh
Inventor
堀下芳邦
松原忍
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Ulvac Inc
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Ulvac Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2009801169298A 2008-05-26 2009-05-20 溅射方法 Active CN102027154B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008-137089 2008-05-26
JP2008137089A JP5429771B2 (ja) 2008-05-26 2008-05-26 スパッタリング方法
PCT/JP2009/059275 WO2009145093A1 (ja) 2008-05-26 2009-05-20 スパッタリング方法

Publications (2)

Publication Number Publication Date
CN102027154A CN102027154A (zh) 2011-04-20
CN102027154B true CN102027154B (zh) 2012-07-18

Family

ID=41376972

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801169298A Active CN102027154B (zh) 2008-05-26 2009-05-20 溅射方法

Country Status (6)

Country Link
US (1) US8404089B2 (https=)
JP (1) JP5429771B2 (https=)
KR (1) KR101250336B1 (https=)
CN (1) CN102027154B (https=)
TW (1) TWI452160B (https=)
WO (1) WO2009145093A1 (https=)

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* Cited by examiner, † Cited by third party
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JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124344B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及び複数のバイポーラパルス電源からなる電源装置並びに出力方法
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
CN103069928B (zh) * 2010-08-18 2015-03-25 株式会社爱发科 直流电源装置
EP2463890A1 (en) * 2010-12-08 2012-06-13 Applied Materials, Inc. Generating plasmas in pulsed power systems
AT513190B9 (de) * 2012-08-08 2014-05-15 Berndorf Hueck Band Und Pressblechtechnik Gmbh Vorrichtung und Verfahren zur Plasmabeschichtung eines Substrats, insbesondere eines Pressblechs
EP2879471B1 (en) * 2012-09-07 2017-05-10 Kyosan Electric Mfg. Co., Ltd. Dc power supply device, and control method for dc power supply device
KR20140038771A (ko) * 2012-09-21 2014-03-31 한국과학기술연구원 기판상에 금속박막을 증착하는 방법
EP3035365A1 (en) * 2014-12-19 2016-06-22 TRUMPF Huettinger Sp. Z o. o. Method of detecting an arc occurring during the power supply of a plasma process, control unit for a plasma power supply, and plasma power supply
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
CN105071657B (zh) * 2015-09-11 2017-12-22 范承 双向可调直流电源
GB2548209B (en) 2016-03-07 2018-03-21 Intelligent Growth Solutions Ltd Controllable power and lighting system
CN110050325B (zh) * 2016-12-19 2021-11-09 应用材料公司 溅射沉积源、具有该溅射沉积源的溅射沉积设备以及将层沉积于基板上的方法
EP3396698A1 (en) * 2017-04-27 2018-10-31 TRUMPF Hüttinger GmbH + Co. KG Power converter unit, plasma processing equipment and method of controlling several plasma processes

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1667155A (zh) * 2004-03-11 2005-09-14 株式会社爱发科 溅射装置
JP3777384B2 (ja) * 1991-07-31 2006-05-24 ウナクシス ドイチュラント ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 部材の製造方法
CN2873799Y (zh) * 2005-04-08 2007-02-28 北京实力源科技开发有限责任公司 一种具有在线清洗功能的磁控溅射靶

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US5698082A (en) * 1993-08-04 1997-12-16 Balzers Und Leybold Method and apparatus for coating substrates in a vacuum chamber, with a system for the detection and suppression of undesirable arcing
JP3028292B2 (ja) * 1995-10-20 2000-04-04 株式会社ハイデン研究所 正負パルス式高電圧電源
JP3429957B2 (ja) 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
DE19651811B4 (de) * 1996-12-13 2006-08-31 Unaxis Deutschland Holding Gmbh Vorrichtung zum Belegen eines Substrats mit dünnen Schichten
DE19702187C2 (de) * 1997-01-23 2002-06-27 Fraunhofer Ges Forschung Verfahren und Einrichtung zum Betreiben von Magnetronentladungen
JPH11146659A (ja) * 1997-11-05 1999-05-28 Haiden Kenkyusho:Kk 正負パルス式スイッチング電源装置
AU2003241958A1 (en) * 2002-05-31 2003-12-19 Shibaura Mechatronics Corporation Discharging power source, sputtering power source, and sputtering device
JP4766368B2 (ja) * 2005-03-10 2011-09-07 独立行政法人物質・材料研究機構 バイポーラパルススパッタリング成膜装置および同装置を用いて作製される薄膜材料の製造方法
EP1864313B1 (de) 2005-03-24 2012-12-19 Oerlikon Trading AG, Trübbach Vakuumplasmagenerator
US9997338B2 (en) * 2005-03-24 2018-06-12 Oerlikon Surface Solutions Ag, Pfäffikon Method for operating a pulsed arc source
JP4922580B2 (ja) * 2005-07-29 2012-04-25 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP4963023B2 (ja) * 2006-01-11 2012-06-27 株式会社アルバック スパッタリング方法及びスパッタリング装置
JP4320019B2 (ja) * 2006-01-11 2009-08-26 株式会社アルバック スパッタリング装置
DE102006028977B4 (de) * 2006-06-23 2012-04-12 Qimonda Ag Sputterdepositions-Vorrichtung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3777384B2 (ja) * 1991-07-31 2006-05-24 ウナクシス ドイチュラント ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 部材の製造方法
CN1667155A (zh) * 2004-03-11 2005-09-14 株式会社爱发科 溅射装置
CN2873799Y (zh) * 2005-04-08 2007-02-28 北京实力源科技开发有限责任公司 一种具有在线清洗功能的磁控溅射靶

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特许第3777384号B2 2006.03.03

Also Published As

Publication number Publication date
TWI452160B (zh) 2014-09-11
KR101250336B1 (ko) 2013-04-03
US8404089B2 (en) 2013-03-26
JP2009280890A (ja) 2009-12-03
US20110036707A1 (en) 2011-02-17
WO2009145093A1 (ja) 2009-12-03
JP5429771B2 (ja) 2014-02-26
TW201006947A (en) 2010-02-16
CN102027154A (zh) 2011-04-20
KR20100135899A (ko) 2010-12-27

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