CN102025340B - Sonic wave resonator and processing method thereof - Google Patents
Sonic wave resonator and processing method thereof Download PDFInfo
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- CN102025340B CN102025340B CN 201010513559 CN201010513559A CN102025340B CN 102025340 B CN102025340 B CN 102025340B CN 201010513559 CN201010513559 CN 201010513559 CN 201010513559 A CN201010513559 A CN 201010513559A CN 102025340 B CN102025340 B CN 102025340B
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Abstract
The invention discloses a sonic wave resonator and a processing method thereof. The sonic wave resonator comprises a substrate provided with an air cavity, a first passivation layer, a seeding layer, a multilayer structure, and a second passivation layer, wherein the first passivation layer is formed on the substrate and is above the air cavity, the seeding layer is formed on the first passivation layer which prevents the interaction between the seeding layer and the ambient environment of the resonator, the multilayer structure is formed on the seeding layer, and the second passivation layer is formed on the multilayer structure. The processing method comprises the steps of: providing the substrate with a sacrifice layer, forming the first passivation layer on the sacrifice layer and extending the first passivation layer to the whole substrate, forming the seeding layer on the first passivation layer, forming the multilayer structure on the seeding layer, forming the second passivation layer on the upper surface of the multilayer structure, and removing the sacrifice layer from the substrate to form the air cavity. The processing method can alleviate the adsorption of materials on the surface of the resonator, eliminate or alleviate the resonator frequency shift generated due to the influence of ambient air or a damp environment, lowers the requirements on the sealing packaging of the resonator to a great extent, and greatly reduces the manufacturing cost of the device.
Description
Technical field
The present invention relates to a kind of acoustic resonator.Particularly relate to a kind of acoustic resonator and processing method thereof with one or more layers passivation layer structure.
Background technology
The simple structure of film bulk acoustic (BAW) resonator is comprised of relative plate electrode and the piezoelectric that is clipped in therebetween.Under condition of work, can cause in piezoelectric layer producing time dependent electric field applying voltage on electrode.Electric field is causing organizator sound wave on the piezoelectric layer direction of vibration, and then forms resonance.Sound wave is propagated along direction of an electric field, then reflects at electrode edge.Processing bulk wave (BAW) resonator is normally at upper surface of substrate deposited bottom electrode successively, piezoelectric layer and top electrodes.Therefore, top electrodes and air dielectric have a common boundary, and bottom electrode is located in substrate, so intersection need to be done some specific designs.Carry out mechanical resonant in order to make bulk wave (BAW) the resonator response two interelectrode signals of telecommunication, have two kinds of known schemes to realize this re-set target at the bottom intersection, the fundamental difference point of these two kinds of methods is to preserve the method difference of acoustic energy.The first scheme is to hang resonator film (hereinafter referred to as " FBAR ") is arranged on the air chamber of substrate inside.A kind of method is the back-etching base material from substrate.If base material is silicon, a part of base material below resonant cavity is removed by back side bulk silicon etching technology.Usually, back side bulk silicon etching technology can be by for example KOH, TMAH and EDP realize with the deep trench ion reaction etching or with the etching that relies on crystallographic direction.In another kind of structure, device architecture is suspended in above the shallow chamber of substrate top or inside.Usually, can deposit the formation sacrifice layer, then form in the above the acoustic resonance layer.In at last or in the step of the course of processing, can remove sacrificial layer material.First scheme is to provide a suitable acoustic reflecting layer and replaces above-described air/material layer junction, this resonator (being commonly referred to " SMR ") bottom is made of alternately high and low acoustic impedance material, and acoustic energy is can be effectively controlled in the piezoelectric resonator chamber.Additional acoustic reflecting layer can reduce the effective coupling coefficient of SMR, and can produce extra acoustical energy losses mechanism and cause the total Q value of SMR poor than FBAR.
Because packaging cost can be dominated total manufacturing cost, be its key factor that succeeds on the consumption market so improve the packaging cost benefit of FBAR and SMR device.Owing to there not being the bottom air chamber, the passivation of SMR and relevant encapsulation thereof are simpler than the cavity type FBAR that requires enclosed package.Non-enclosed package method cost is lower, but needs fabulous passivation resonator to make it not be subjected to corrosion impact under wet environment.
Therefore, above-mentioned many defectives and deficiency need to be well solved.
Summary of the invention
Technical problem to be solved by this invention is, a kind of acoustic resonator and processing method thereof are provided, acoustic resonator is the FBAR resonator structure, adopt the FBAR of this structure to eliminate or alleviate the frequency shift (FS) that produces due to surrounding air or wet environment impact, and loosen to a great extent the requirement of enclosed package, keep simultaneously the good electromechanical coupling factor of resonator and quality factor unaffected.
The technical solution adopted in the present invention is: a kind of acoustic resonator comprises:
(a) has the substrate of air chamber;
(b) the first passivation layer that forms in substrate, and be positioned at above air chamber;
(c) Seed Layer that forms on the first passivation layer, the first passivation layer stop Seed Layer and resonator surrounding environment to interact;
(d) sandwich construction that forms on Seed Layer; And
(e) the second passivation layer that forms at the sandwich construction upper surface.
Sandwich construction wherein comprises:
(a) bottom electrode that forms on Seed Layer;
(b) piezoelectric layer that forms on bottom electrode; And
(c) top electrodes that forms on piezoelectric layer.
Sandwich construction wherein comprises:
(a) the first bottom electrode that forms on Seed Layer;
(b) the first piezoelectric layer that forms on the first bottom electrode;
(c) the first top electrodes that forms on the first piezoelectric layer;
(d) decoupler layer that forms on the first top electrodes;
(e) the second bottom electrode that forms on decoupler layer;
(f) the second piezoelectric layer that forms on the second bottom electrode; And
(g) the second top electrodes that forms on the second piezoelectric layer.
The constituent material of described the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and hydrophobic polymer.
Described the second passivation material and the first passivation material are identical or different.
The thickness of described the first passivation layer is 10～10000 dusts.
The constituent material of described Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum.
A kind of method of making acoustic resonator comprises the steps:
(a) provide substrate with sacrifice layer;
(b) form the first passivation layer and extend to whole substrate on sacrifice layer;
(c) form Seed Layer on the first passivation layer;
(d) form sandwich construction on Seed Layer;
(e) form the second passivation layer at the sandwich construction upper surface; And
(f) sacrifice layer is removed to form air chamber from substrate.
The process that wherein forms sandwich construction comprises following several step:
(a) form bottom electrode on Seed Layer;
(b) form piezoelectric layer on bottom electrode; And
(c) form top electrodes on piezoelectric layer.
The process that wherein forms sandwich construction comprises following several step:
(a) form the first bottom electrode on Seed Layer;
(b) form the first piezoelectric layer on the first bottom electrode;
(c) form the first top electrodes on the first piezoelectric layer;
(d) form decoupler layer on the first top electrodes;
(e) form the second bottom electrode on decoupler layer;
(f) form the second piezoelectric layer on the second bottom electrode; And
(g) form the second top electrodes on the second piezoelectric layer.
The making material of the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and hydrophobic polymer.
The constituent material of the constituent material of the second passivation layer and the first passivation layer is identical or different.
Wherein the thickness of the first passivation layer is 10～10000 dusts.
The constituent material of Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum.
A kind of method of making acoustic resonator comprises the steps:
(a) provide substrate;
(b) form the first passivation layer in substrate;
(c) form Seed Layer on the first passivation layer;
(d) form sandwich construction;
(e) form the second passivation layer at the sandwich construction upper surface; And
(f) a part of substrate below the first passivation layer is removed to form air chamber.
The forming process of sandwich construction comprises following several step:
(a) form bottom electrode on Seed Layer;
(b) form piezoelectric layer on bottom electrode; And
(c) form top electrodes on piezoelectric layer.
The forming process of sandwich construction comprises following several step:
(a) form the first bottom electrode on Seed Layer;
(b) form the first piezoelectric layer on the first bottom electrode;
(c) form the first top electrodes on the first piezoelectric layer;
(d) form decoupler layer on the first top electrodes;
(e) form the second bottom electrode on decoupler layer;
(f) form the second piezoelectric layer on the second bottom electrode; And
(g) form the second top electrodes on the second piezoelectric layer.
The making material of the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal (DLC), silica, silicon nitride and hydrophobic polymer.
The material that consists of the second passivation layer is identical or different with the material that consists of the first passivation layer.
Wherein the thickness of the first passivation layer is 10～10000 dusts.
The constituent material of Seed Layer is aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum or their combination.
A kind of acoustic resonator comprises:
(a) have the substrate of first surface and corresponding second surface, and on the substrate first surface with air chamber;
(b) the first passivation layer on the substrate first surface, and the first passivation layer is positioned at above air chamber;
(c) the second passivation layer and the first passivation layer are spaced apart and come;
(d) sandwich construction is between the first passivation layer and the second passivation layer.
Further comprise being positioned at the first passivation layer and the middle Seed Layer of sandwich construction, such the first passivation layer is used for stoping Seed Layer and resonator surrounding environment to interact.
Acoustic resonator of the present invention and processing method thereof, can weaken material in the absorption of resonator surface, eliminate or alleviate the resonant frequency that produces due to surrounding air or wet environment impact and be offset, loosen to a great extent the requirement to the resonator enclosed package, greatly reduced the device manufacturing cost.Therefore good electromechanical coupling factor and the quality factor of resonator are not affected simultaneously.
Description of drawings
Accompanying drawing is set forth principle of the present invention for detailed embodiment the present invention together with explanation.Use as far as possible in the accompanying drawings the identical same or similar part of number indication, wherein:
Figure 1A and 1B are the acoustic resonator sectional views of first example of this patent;
Fig. 2 A and 2B are the acoustic resonator sectional views of second example of this patent;
Fig. 3 A and 3B are the acoustic resonator sectional views of the 3rd example of this patent;
Fig. 4 A and 4B are the acoustic resonator sectional views of the 4th example of this patent;
Figure 5 shows that the process chart of the acoustic resonator in Figure 1A and 1B;
Figure 6 shows that the process chart of the acoustic resonator in Fig. 2 A and 2B;
Figure 7 shows that the process chart of the acoustic resonator in Fig. 3 A and 3B;
Figure 8 shows that the process chart of the acoustic resonator in Fig. 4 A and 4B.
Embodiment
Below in conjunction with embodiment and accompanying drawing, acoustic resonator of the present invention and processing method thereof are made a detailed description.
The present invention will elaborate hereinafter together with the reference accompanying drawing, and its representative instance is also in this displaying.Although the present invention has many multi-form embodiments, the present invention is not limited to example as described herein.More accurately, providing of these examples is that elaboration in order to make this technology can be detailed and complete, and can fully pass on scope of the present invention to the people that are familiar with this field.Identical reference number represents identical part all the time.
Example of the present invention is associated with the method for making acoustic wave device.FBAR will be described in example below as a kind of acoustic wave device.
Carry out the description of example of the present invention together with accompanying drawing 1-8.Purpose according to this patent, just as described in detail, to relevant at the acoustic resonator made from the substrate of air chamber, this resonator has the first passivation layer, Seed Layer, bottom electrode, piezoelectric, top electrodes and the second passivation layer and they are stacking continuously from the one hand in the present invention.Seed Layer selects certain material to guarantee the crystal orientation growth of bottom electrode, and the crystal structure of bottom electrode is necessary for the piezoelectric layer that generates high crystal lattice orientation.The first passivation layer can weaken material in the absorption of resonator surface, and is not subjected to the air that brings by air chamber and the impact of wet environment as following protective layer protection Seed Layer, and this air chamber is the hole that stays after releasing sacrificial layer.Therefore, the resonant frequency drift that is caused by environmental pollution is reduced to minimum, and resonator can be avoided the damaging influence that humidity or corrosive liquids cause.
In reference Figure 1A and 1B, resonator 100 first example for obtaining according to the present invention.Resonator 100 comprises substrate 110, the first passivation layer 120 that forms in substrate 110, the Seed Layer 130 that forms on the first passivation layer 120, the bottom electrode 142 that forms on Seed Layer 130, the piezoelectric layer 144 that forms on bottom electrode 142, the top electrodes 146 that forms on piezoelectric layer 144, and the second passivation layer 150 that forms on top electrodes 146.
The first passivation layer 120 is directly above forming in substrate 110 and being positioned at air chamber 112.Better in situation, the thickness of the first passivation layer 120 can reach 10～10000 dusts.
The first passivation layer 120 does not act on air and wet environment by air chamber mutually as following protective layer protection Seed Layer 130.If there is no the first passivation layer 120, the resonance frequency of resonator 100 can be passed in time and be drifted about.Because air chamber 112 is connected with the resonator external environment condition by emptying road 116, can cause the oxidation of resonator expose portion from air, humidity or the pollution of external environment condition.For the frequency drift with resonator is reduced to minimum, the first passivation layer 120 is filled the material that is not easy to environmental activity usually, as carborundum (silicon oxide), aluminium oxide (aluminum oxide), diamond (diamond), diamond-like coal (DLC), silica (silicon oxide), silicon nitride (silicon nitride), hydrophobic polymer (hydrophobic polymer) or similar material.
On Seed Layer 130, successively deposited bottom electrode 142, piezoelectric layer 144 and top electrodes 146.Bottom electrode 142 and top electrodes 146 are made by following metal, as gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), the metalloids such as ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminium (Al), titanium (Ti), but be not limited to above material.Piezoelectric layer 144 is made by following material, as aluminium nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO
3), quartzy (quartz), potassium niobate (KNbO
3) or lithium tantalate (LiTaO
3) etc. material, but be not limited to above material.
The piezoelectric layer material depends on roughness and the material of the bottom electrode layer that is positioned at its below to a great extent.Seed Layer 130 can provide bottom electrode 142 level and smooth, that have good lattice structure, the bottom electrode 142 of good lattice structure and then can promote has the formation of the piezoelectric layer 144 of good lattice structure and C-axle orientation, therefore piezoelectric layer 144 has good quality, can make high performance resonator 100.In an example, the constituent material of Seed Layer 130 can be identical with the constituent material of piezoelectric layer 144, as aluminium nitride (AlN).The electromechanical coupling factor of resonator 100 is improved, and is suitable for making broadband filter.
In addition, the making material of the second passivation layer 150 of deposition can be identical or different with the first passivation material on top electrodes 146.The second passivation layer 150 is used for preventing top electrodes 146 with air, humidity or pollutes contacting, with the service behaviour of stabilizing cavity 100.
With reference to figure 2A and 2B, second example of resonator 200 for obtaining according to the present invention.resonator 200 comprises substrate 210, the first passivation layer 220 that forms in substrate 210, the Seed Layer 230 that forms on the first passivation layer 220, the first bottom electrode 242 that forms on Seed Layer 230, the first piezoelectric layer 244 that forms on the first bottom electrode 242, the first top electrodes 246 that forms on the first piezoelectric layer 244, the decoupler layer 260 that forms on the first top electrodes 246, the second bottom electrode 272 that forms on decoupler layer 260, the second piezoelectric layer 274 that forms on the second bottom electrode 272, the second top electrodes 276 that forms on the second piezoelectric layer 274, and the second passivation layer 250 that forms on the second top electrodes 276.
The first passivation layer 220 prevents that as following protective layer Seed Layer and the air that brings by air chamber and wet environment from acting on mutually.If there is no the first passivation layer 220, the resonance frequency of resonator 200 can be passed in time and be drifted about.Because air chamber 212 is connected with the resonator external environment condition by emptying road 216, so the oxidation that can cause the resonator expose portion from humidity or the pollution of external environment condition.For the frequency drift with resonator is reduced to minimum, the first passivation layer 220 is filled the material that is not easy to environmental activity usually, as carborundum (silicon oxide), aluminium oxide (aluminum oxide), diamond (diamond), diamond-like coal (DLC), silica (silicon oxide), silicon nitride (silicon nitride), hydrophobic polymer (hydrophobic polymer) or their combination.
The first bottom electrode 242, the first piezoelectric layer 244 and the first top electrodes 246 are stacking to form a FBAR on Seed Layer 230 successively.The second bottom electrode 272, the second piezoelectric layer 274 and the second top electrodes 276 stack gradually and form the 2nd FBAR.The upright stacking formation levels of acoustic coupling resonance filter of first, second FBAR (CRF).Such CRF can have higher stopband far away to be suppressed and wider pass band width.
The first bottom electrode 242, the first top electrodes 246, the second bottom electrode 272 and the second top electrodes 276 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to above material.The first piezoelectric layer 244 and the second piezoelectric layer 274 are made by following material, as AlN, ZnO, PZT, quartz, LiNbO
3, KNbO
3Or LiTaO
3Deng material.
It is level and smooth that Seed Layer 230 can provide, and the bottom electrode with good lattice structure can form high-quality piezoelectric layer 244 having on the bottom electrode of good lattice structure.Therefore, by Seed Layer 230, can make high-performance piezoelectric layer 244, and then improve the service behaviour of resonator 200.In an example, the making material of Seed Layer 230 can be identical with piezoelectric layer 244 materials, as AlN.
The second passivation layer 250 forms on the second top electrodes 276, contacts with air or wet environment to prevent the second top electrodes 276.The second passivation layer 250 materials can be identical or different with the first passivation layer 220 materials.
With reference to figure 3A and 3B, three example of resonator 300 for obtaining according to the present invention.Resonator 300 comprises substrate 310, the first passivation layer 320 that forms in substrate 310, the Seed Layer 330 that forms on the first passivation layer 320, the bottom electrode 342 that forms on Seed Layer 330, the piezoelectric layer 344 that forms on bottom electrode 342, the top electrodes 346 that forms on piezoelectric layer 344, and the second passivation layer 350 that forms on top electrodes 346.A part of substrate that can will be positioned at by etching technics the first passivation layer 320 belows from the back side of substrate 310 is removed, thereby forms air chamber 312.
The first passivation layer 320 directly forms on air chamber 312.Better in situation, the thickness of the first passivation layer 320 can reach 10～10000 dusts.
The first passivation layer 320 prevents that as following protective layer Seed Layer and the air that brings by air chamber and wet environment from acting on mutually.If there is no the first passivation layer 320, the resonance frequency of resonator 300 can be passed in time and be drifted about.Because air chamber 312 is connected with the resonator external environment condition, so from the air of external environment condition, may also have humidity or pollution can cause the oxidation of resonator expose portion.For the frequency drift with resonator is reduced to minimum, the first passivation layer 320 is filled the material that is not easy to environmental activity usually, as carborundum (silicon oxide), aluminium oxide (aluminum oxide), diamond (diamond), diamond-like coal (DLC), silica (silicon oxide), silicon nitride (silicon nitride), hydrophobic polymer (hydrophobic polymer) or their combination.
Above Seed Layer 330, deposit successively the first bottom electrode 342, piezoelectric layer 344 and the first top electrodes 346.The first bottom electrode 342 and the first top electrodes 346 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to above material.Piezoelectric layer 344 is made by following material, as AlN, ZnO, PZT, quartz (quartz), LiNbO
3, KNbO
3Or LiTaO
3Deng material.
The second passivation layer 350 is deposited on top electrodes 346.The second passivation layer 350 is used for preventing top electrodes 346 with air, humidity or pollutes contacting, with the service behaviour of stabilizing cavity 300.The making material of the second passivation layer 350 can be identical or different with the making material of the first passivation layer 320.
With reference to figure 4A and 4B, four example of resonator 400 for obtaining according to the present invention.Resonator 400 comprises substrate 410, the first passivation layers 420, Seed Layer 430, the first bottom electrodes 442, the first piezoelectric layer 444, the first top electrodes 446, decoupler layer 460, the second bottom electrodes 472, the second piezoelectric layer 474, the second top electrodes 476, and the second passivation layer 450.A part of substrate that will be positioned at the first passivation layer 420 belows by etching technics from the back side of substrate 410 is removed, thereby forms air chamber 412.
The first passivation layer 420 directly forms on air chamber 412.Better in situation, the thickness of the first passivation layer 420 is 10～10000 dusts.
The first passivation layer 420 prevents that as following protective layer Seed Layer 430 and the air that brings by air chamber and wet environment from acting on mutually.If there is no the first passivation layer 420, the resonance frequency of resonator 400 can be passed in time and be drifted about.Because air chamber 412 is connected with the resonator external environment condition, can cause the oxidation of resonator expose portion from air, humidity or the pollution of external environment condition.For the frequency drift with resonator is reduced to minimum, the first passivation layer 420 is filled the material that is not easy to environmental activity usually, as carborundum (silicon oxide), aluminium oxide (aluminum oxide), diamond (diamond), diamond-like coal (DLC), silica (silicon oxide), silicon nitride (silicon nitride), hydrophobic polymer (hydrophobic polymer) or their combination.
The first bottom electrode 442, the first piezoelectric layer 444, the first top electrodes 446 stack gradually and form a FBAR on the first passivation layers 420.The second bottom electrode 472, the second piezoelectric layers 474 and the second top electrodes 476 stack gradually and form the 2nd FBAR.The upright stacking formation CRF of the one FBAR and the 2nd FBAR.CRF can have higher inhibition and have wider bandwidth at stopband far away.
The first bottom electrode 442, the first top electrodes 446, the second bottom electrode 472 and the second top electrodes 476 can be made by following metal, as metalloids such as Au, W, Mo, Pt, Ru, Ir, TiW, Al, Ti, but are not limited to these materials.The first piezoelectric layer 444 and the second piezoelectric layer 474 are made by following material, as AlN, ZnO, PZT, quartz, LiNbO
3, KNbO
3Or LiTaO
3Deng material.
The second passivation layer 450 forms on the second top electrodes 476, contacts with air or wet environment to prevent the second top electrodes 476.The second passivation layer 450 is made material can be identical or different with the first passivation layer 420 materials.
The present invention also provides the manufacture method of above-described acoustic resonator.
In conjunction with Figure 1A and 1B, Figure 5 shows that the process chart of the acoustic resonator that obtains according to example of this patent, wherein comprise following step.
Step S101 provides the substrate 110 with sacrifice layer 114.The material of making sacrifice layer comprises silica (siliconoxide), polysilicon (polysilicon), metal (metal) (as germanium (germanium), magnesium (magnesium), aluminium (aluminum) etc.) or polymer (polymer), utilizes sputtering technology, chemical vapour deposition (CVD) (CVD) technique, physical vapour deposition (PVD) (PVD) technique, spin coating or other close technique that sacrificial layer material is deposited on substrate 110 inside or its upper surfaces.Then planarization substrate 110 and sacrifice layer 114;
Step S103 forms the first passivation layer 120 in substrate 110, and makes the first passivation layer 120 be positioned at sacrifice layer 114 tops, and usually, the first passivation layer 120 is formed on substrate 110 and above sacrifice layer 114;
Step S105 forms Seed Layer 130 on the first passivation layer 120;
Step S107 forms bottom electrode 142 on Seed Layer 130;
Step S109 forms piezoelectric layer 144 on bottom electrode 142;
Step S111 forms top electrodes 146 on piezoelectric layer 144;
Step S113 forms the second passivation layer 150 on top electrodes 146;
Step S115 removes sacrifice layer 144 to form air chamber 112.
In an example, by emptying road 116, sacrificial layer material is etched away.Emptying road 116 is connected air chamber 112 with resonator 100 external environment conditions.Other etching technics such as deep reaction ion etching (DRIE) and utilization also can be used for sacrifice layer 114 is removed in substrate 110 as the dependence crystal orientation wet etching of KOH, TMAH or EDP.Step S115 can be placed on step S107, S109, S111 or S113 front.That is to say and to get rid of sacrifice layer 114 before bottom electrode 142, piezoelectric layer 144, top electrodes 146 and the second passivation layer 150 form.
In conjunction with Fig. 2 A and 2B, Figure 6 shows that the process chart of the acoustic resonator that obtains according to another example of this patent, comprise following step in its manufacture process.
Step S201 provides the substrate 210 with sacrifice layer 214.Sacrificial layer material comprises silica (silicon oxide), polysilicon (polysilicon), metal (metal) (as germanium (germanium), magnesium (magnesium), aluminium (aluminum) etc.) or polymer (polymer), utilize sputtering technology, chemical vapour deposition (CVD) (CVD) technique, physical vapour deposition (PVD) (PVD) technique, spin coating or other close technique that sacrificial layer material is deposited on substrate 210 inside or its upper surface, then planarization substrate 210 and sacrifice layers 214;
Step S203 forms the first passivation layer 220 on sacrifice layer 214.Usually, the first passivation layer 220 is formed on substrate 210 and sacrifice layer 214 tops;
Step S205 forms Seed Layer 230 on the first passivation layer 220;
Step S207 forms the first bottom electrode 242 on Seed Layer 230;
Step S209 forms the first piezoelectric layer 244 on the first bottom electrode 242;
Step S211 forms the first top electrodes 246 on the first piezoelectric layer 244;
Step S213 forms decoupler layer 260 on the first top electrodes 246;
Step S215 forms the second bottom electrode 272 on decoupler layer 260;
Step S217 forms the second piezoelectric layer 274 on the second bottom electrode 272;
Step S219 forms the second top electrodes 276 on the second piezoelectric layer 274;
Step S221 forms the second passivation layer 250 on the second top electrodes 276;
Step S223 removes sacrifice layer 214 to form air chamber 212.
In an example, sacrifice layer 214 is removed by emptying road 216.Emptying road 216 is connected air chamber 212 with resonator 200 external environment conditions.Other etching technics such as deep reaction ion etching (DRIE) and utilization also can be used for sacrifice layer 214 is removed from substrate 210 as the dependence crystal orientation wet etching of KOH, TMAH or EDP.Step S223 can be placed on step S207, S209, S211, S213, S215, S217, S219 or S221 front.That is to say and to remove sacrifice layer 214 before the first bottom electrode 242, the first piezoelectric layer 244, the first top electrodes 246, decoupler layer 260, the second bottom electrode 272, the second piezoelectric layer 274, the second top electrodes 276 and the second passivation layer 250 form.
In conjunction with Fig. 3 A and 3B, Figure 7 shows that the process chart of the acoustic resonator that obtains according to another example of this patent, comprise following step in its manufacture process.
Step S301 provides substrate 310;
Step S303 forms the first passivation layer 320 in substrate 310;
Step S305 forms Seed Layer 330 on the first passivation layer 320, usually, Seed Layer 330 is formed on above the first passivation layer 320;
Step S307 forms bottom electrode 342 on Seed Layer 330;
Step S309 forms piezoelectric layer 344 on bottom electrode 342;
Step S311 forms top electrodes 346 on piezoelectric layer 344;
Step S313 forms the second passivation layer 350 on top electrodes 346;
Step S315, substrate 310 parts (on it form the first passivation layer 320) remove to form air chamber 312 by etching technics from substrate 310 back sides.A part of substrate that will be positioned at the first passivation layer 320 belows by etching technics from the back side of substrate 310 is removed, thereby forms air chamber 312.
In conjunction with Fig. 4, Figure 8 shows that the process chart of the acoustic resonator that further obtains according to another example of this patent, comprise following step in its manufacture process.
Step S401 provides substrate 410;
Step S403 forms the first passivation layer 420 in substrate 410;
Step S405 forms Seed Layer 430 on the first passivation layer 420.Usually, Seed Layer 430 is formed on the first passivation layer 420 surfaces;
Step S407 forms the first bottom electrode 442 on Seed Layer 430;
Step S409 forms the first piezoelectric layer 444 on the first bottom electrode 442;
Step S411 forms the first top electrodes 446 on the first piezoelectric layer 444;
Step S413 forms decoupler layer 460 on the first top electrodes 446;
Step S415 forms the second bottom electrode 472 on decoupler layer 460;
Step S417 forms the second piezoelectric layer 474 on the second bottom electrode 472;
Step S419 forms the second top electrodes 476 on the second piezoelectric layer 474;
Step S421 forms the second passivation layer 450 on the second top electrodes 476;
Step S423, a part of substrate that will be positioned at the first passivation layer 420 belows by etching technics from the back side of substrate 410 is removed, thereby forms air chamber 412.
Generally speaking, the invention discloses the acoustic resonator that has at least one deck passivation layer.Passivation layer is in order to weaken material in the absorption of resonator surface, and is not subjected to the air that brings by air chamber and the impact of wet environment as following protective layer protection Seed Layer.Therefore, the resonant frequency drift that is caused by environmental pollution is reduced to minimum, and resonator can be avoided the damaging influence that humidity or corrosive liquids cause simultaneously.
Above-mentioned description to several typical body wave resonators in the present invention is only in order to illustrate, these explanations are not very detailed, can not limit the definite form of invention.In view of the present invention, can make many modifications and variations.
The selection of example and description are in order to explain principle of the present invention and practical application, in order to stimulate the other technologies in this field to use the present invention and various example, and to carry out suitable modification according to special-purpose.Do not depart from spirit and scope of the invention, it is easily that the technology of using this field changes example.Therefore, scope of the present invention is defined by accessory claim, rather than is determined by the example of foregoing description and wherein discussion.
Claims (23)
1. acoustic resonator is characterized in that: comprising:
(a) has the substrate of air chamber;
(b) the first passivation layer that forms in substrate, and be positioned at above air chamber;
(c) Seed Layer that forms on the first passivation layer, the first passivation layer stop Seed Layer and resonator surrounding environment to interact;
(d) sandwich construction that forms on Seed Layer; And
(e) the second passivation layer that forms at the sandwich construction upper surface.
2. acoustic resonator according to claim 1, is characterized in that, sandwich construction wherein comprises:
(a) bottom electrode that forms on Seed Layer;
(b) piezoelectric layer that forms on bottom electrode; And
(c) top electrodes that forms on piezoelectric layer.
3. acoustic resonator according to claim 1, is characterized in that, sandwich construction wherein comprises:
(a) the first bottom electrode that forms on Seed Layer;
(b) the first piezoelectric layer that forms on the first bottom electrode;
(c) the first top electrodes that forms on the first piezoelectric layer;
(d) decoupler layer that forms on the first top electrodes;
(e) the second bottom electrode that forms on decoupler layer;
(f) the second piezoelectric layer that forms on the second bottom electrode; And
(g) the second top electrodes that forms on the second piezoelectric layer.
4. acoustic resonator according to claim 1, it is characterized in that, the constituent material of described the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal DLC, silica, silicon nitride and hydrophobic polymer.
5. acoustic resonator according to claim 1, is characterized in that, the material of described the second passivation layer and the first passivation material are identical or different.
6. acoustic resonator according to claim 1, is characterized in that, the thickness of described the first passivation layer is 10～10000 dusts.
7. acoustic resonator according to claim 1, is characterized in that, the constituent material of described Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum.
8. a method of making acoustic resonator, is characterized in that: comprise the steps:
(a) provide substrate with sacrifice layer;
(b) form the first passivation layer and extend to whole substrate on sacrifice layer;
(c) form Seed Layer on the first passivation layer;
(d) form sandwich construction on Seed Layer;
(e) form the second passivation layer at the sandwich construction upper surface; And
(f) sacrifice layer is removed to form air chamber from substrate.
9. the method for manufacturing acoustic resonator according to claim 8, is characterized in that, the process that wherein forms sandwich construction comprises following several step:
(a) form bottom electrode on Seed Layer;
(b) form piezoelectric layer on bottom electrode; And
(c) form top electrodes on piezoelectric layer.
10. the method for manufacturing acoustic resonator according to claim 8, is characterized in that, the process that wherein forms sandwich construction comprises following several step:
(a) form the first bottom electrode on Seed Layer;
(b) form the first piezoelectric layer on the first bottom electrode;
(c) form the first top electrodes on the first piezoelectric layer;
(d) form decoupler layer on the first top electrodes;
(e) form the second bottom electrode on decoupler layer;
(f) form the second piezoelectric layer on the second bottom electrode; And
(g) form the second top electrodes on the second piezoelectric layer.
11. the method for manufacturing acoustic resonator according to claim 8, it is characterized in that, the making material of the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal DLC, silica, silicon nitride and hydrophobic polymer.
12. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the constituent material of the constituent material of the second passivation layer and the first passivation layer is identical or different.
13. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, wherein the thickness of the first passivation layer is 10～10000 dusts.
14. the method for manufacturing acoustic resonator according to claim 8 is characterized in that, the constituent material of Seed Layer is a kind of or two or more mixtures in aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum.
15. a method of making acoustic resonator is characterized in that: comprise the steps:
(a) provide substrate;
(b) form the first passivation layer in substrate;
(c) form Seed Layer on the first passivation layer;
(d) form sandwich construction;
(e) form the second passivation layer at the sandwich construction upper surface; And
(f) a part of substrate below the first passivation layer is removed to form air chamber.
16. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the forming process of sandwich construction comprises following several step:
(a) form bottom electrode on Seed Layer;
(b) form piezoelectric layer on bottom electrode; And
(c) form top electrodes on piezoelectric layer.
17. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the forming process of sandwich construction comprises following several step:
(a) form the first bottom electrode on Seed Layer;
(b) form the first piezoelectric layer on the first bottom electrode;
(c) form the first top electrodes on the first piezoelectric layer;
(d) form decoupler layer on the first top electrodes;
(e) form the second bottom electrode on decoupler layer;
(f) form the second piezoelectric layer on the second bottom electrode; And
(g) form the second top electrodes on the second piezoelectric layer.
18. the method for manufacturing acoustic resonator according to claim 15, it is characterized in that, the making material of the first passivation layer is a kind of or two or more mixtures in carborundum, aluminium oxide, diamond, diamond-like coal DLC, silica, silicon nitride and hydrophobic polymer.
19. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the material that consists of the second passivation layer is identical or different with the material that consists of the first passivation layer.
20. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, wherein the thickness of the first passivation layer is 10～10000 dusts.
21. the method for manufacturing acoustic resonator according to claim 15 is characterized in that, the constituent material of Seed Layer is aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride and carborundum or their combination.
22. an acoustic resonator is characterized in that: comprising:
(a) have the substrate of first surface and corresponding second surface, and on the substrate first surface with air chamber;
(b) the first passivation layer on the substrate first surface, and the first passivation layer is positioned at above air chamber;
(c) the second passivation layer and the first passivation layer are spaced apart and come;
(d) sandwich construction is between the first passivation layer and the second passivation layer,
Sandwich construction wherein comprises:
(a) bottom electrode;
(b) piezoelectric layer that forms on bottom electrode; And
(c) top electrodes that forms on piezoelectric layer;
Or sandwich construction wherein comprises:
(a) the first bottom electrode;
(b) the first piezoelectric layer that forms on the first bottom electrode;
(c) the first top electrodes that forms on the first piezoelectric layer;
(d) decoupler layer that forms on the first top electrodes;
(e) the second bottom electrode that forms on decoupler layer;
(f) the second piezoelectric layer that forms on the second bottom electrode; And
(g) the second top electrodes that forms on the second piezoelectric layer.
23. acoustic resonator according to claim 22 is characterized in that, further comprises being positioned at the first passivation layer and the middle Seed Layer of sandwich construction, such the first passivation layer is used for stoping Seed Layer and resonator surrounding environment to interact.
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