CN102291095A - Composite acoustic wave resonator - Google Patents

Composite acoustic wave resonator Download PDF

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CN102291095A
CN102291095A CN2011101077030A CN201110107703A CN102291095A CN 102291095 A CN102291095 A CN 102291095A CN 2011101077030 A CN2011101077030 A CN 2011101077030A CN 201110107703 A CN201110107703 A CN 201110107703A CN 102291095 A CN102291095 A CN 102291095A
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acoustic impedance
electrode
formed
material
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庞慰
张�浩
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庞慰
张�浩
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Abstract

一种声波谐振器,包括:带有空气腔的基底;在基底上形成并位于空气腔之上的第一低、高声阻抗层对;在第一低、高声阻抗层对上形成的种子层;在种子层上形成的第一电极;在第一电极上形成的压电层;在压电层上形成的第二电极;在第二电极上形成的第二低、高声阻抗层对;在第二低、高声阻抗层对上形成的钝化层。 An acoustic wave resonator, comprising: a substrate with an air chamber; formed on the substrate and located above the first lower air cavity, acoustic impedance of the layer; a first low acoustic impedance formed on the seed layer layer; a first electrode formed on the seed layer; piezoelectric layer formed on the first electrode; a second electrode formed on the piezoelectric layer; and a second lower electrode formed on the second, high acoustic impedance layer ; passivation layer is formed on the second low acoustic impedance layer pair. 第一低、高声阻抗层对包括位于空气腔之上的第一高声阻抗层,和位于第一高声阻抗层与种子层之间的第一低声阻抗层;第二低、高声阻抗层对包括在第二电极上形成的第二低声阻抗层,和在第二低声阻抗层与钝化层之间形成的第二高声阻抗层。 A first low acoustic impedance layer comprises a first acoustic impedance layer located above the air cavity, and a first layer of low acoustic impedance between the impedance of the first layer and the seed layer loud; second low, loud resistance layer comprises a second low acoustic impedance layer formed on the second electrode, and a second layer of high acoustic impedance layer and a low acoustic impedance between the second passivation layer is formed. 本发明可以提高声波谐振器对环境变化和自身老化的抵抗能力,减小频率修正灵敏度,和/或优化声波谐振器的色散特性。 The present invention can improve the acoustic resonator resistance to environmental changes and aging itself, reducing the sensitivity of the frequency correction and / or to optimize the dispersion characteristics of the acoustic wave resonator.

Description

复合体声波谐振器 Composite acoustic wave resonator

技术领域 FIELD

[0001] 本发明涉及一种声波谐振器和滤波器。 [0001] The present invention relates to an acoustic resonator and a filter. 特别是涉及一种应用复合层结构的复合体声波谐振器。 More particularly to a composite acoustic wave resonator multilayer structure applications.

背景技术 Background technique

[0002] 压电体声波(BAW)谐振器广泛应用于无线手持设备中的高性能射频(RF)滤波器和双工器中。 [0002] The piezoelectric bulk acoustic wave (the BAW) resonators are widely used in high-performance RF wireless handheld devices (RF) filter and a duplexer. 相比于传统的RF陶瓷滤波器和声表面波(SAW)滤波器,BAW滤波器具有独特的优点:尺寸小、频率随温度的漂移小、功率容量大、工作频率高等等。 Compared to a conventional RF ceramic filters and surface acoustic wave (SAW) filter, the BAW filters have unique advantages: small size, a small frequency shift with temperature, large power capacity, higher operating frequency and the like. 与集成电路(IC)相结合,BAW谐振器已经被用来构成低相位噪声振荡器和频率控制应用中的压控振荡器。 In combination with an integrated circuit (IC), BAW resonators have been used to form a low phase noise oscillator VCO and a frequency control applications. 通常在硅晶圆上利用IC加工技术来加工BAW谐振器,这种加工方法具有封装尺寸小、均一性好、成本低等特点。 Typically on a silicon wafer using the IC processing techniques to process the BAW resonator, this processing method has a small package size, good uniformity, and low cost.

[0003] 如图11所示,传统的BAW谐振器10包含压电层14,如氮化铝(aluminum nitride),其被两层金属电极1½和14b所夹从而形成三明治结构。 [0003] As shown in FIG. 11, the conventional BAW resonator 10 comprises a piezoelectric layer 14, such as aluminum nitride (aluminum nitride), which is sandwiched between two metallic electrodes 1½ and 14b so as to form a sandwich structure. 当在两电极1½和14b 之间施加一个RF电信号,谐振腔会由于压电效应而发生机械的扩展和收缩,从而在结构10 中激励出声波。 When applied to a RF electrical signal between the two electrodes 1½ and 14b, the cavity due to the piezoelectric effect of mechanical expansion and contraction, so that the acoustic waves excited in the structure 10. 声波的传播方向与所施加的电场方向平行,并且其在电极Ha和14b与空气的交界面上反射,从而形成谐振。 Parallel to the direction of acoustic wave propagation direction of the applied electric field, and in which the reflective electrode 14b and Ha and the interface of air, thereby forming a resonance.

[0004] 薄膜体声波谐振器(FBAR)是BAW谐振器的一个实施例。 [0004] The film bulk acoustic resonator (the FBAR) is an embodiment according to the BAW resonator. 谐振器包括一层压电层以及夹在压电层两侧的底电极与顶电极。 Resonator comprising a piezoelectric layer and a top electrode and a bottom electrode sandwiching the piezoelectric layer on both sides. 两个电极间的重叠区域即有效区域,声波能量被限制在有效区域内。 I.e., the effective area of ​​the overlapping area between the two electrodes, an acoustic wave energy is confined within the active region. FBAR的两侧都与空气或真空交界,例如在基底11上或其内部形成空气腔13以限制声波。 Vacuum or both sides of the junction of the FBAR with air, for example, on the substrate 11 or inside the air chamber 13 is formed to limit the acoustic wave. 在实际的实现中,结构的有效区域悬于基底之上。 In an actual implementation, the effective area of ​​the structure suspended above the substrate. 底部的空气交界可以通过使用牺牲层材料(之后会将其移除)或刻蚀掉部分基底而实现。 Air boundary at the bottom can be achieved by using a sacrificial layer material (which will later be removed), or etching away portions of the substrate. 通常基底的材料为硅,也可以使用其它基底材料。 A silicon substrate is generally a material, other substrate materials may be used.

[0005] 还有一种形式的BAW谐振器被称为固嵌式谐振器(SMI?)。 [0005] Another form of the BAW resonator is called a solid embedded resonator (SMI?). 在SMR结构中,底电极位于声学镜之上,此声学镜由多层高、低声阻抗材料的反射层组成,如低密度的氧化硅(siliconoxide)和高密度的钨(tungsten)。 In SMR structure, the bottom electrode is disposed on the acoustic mirror, a multilayer mirror of this acoustic high, low acoustic impedance material constituting the reflective layer, such as low density silicon oxide (siliconoxide) and high density tungsten (tungsten). 声学镜代替了FBAR结构中位于底电极之下的空气交界,在谐振器与硅衬底之间形成了隔离从而阻止声波能量泄露到衬底中,造成声学损耗。 The acoustic mirror structure instead of air FBAR junction located beneath the bottom electrode, and between the resonator and the silicon substrate isolation to prevent leakage of acoustic energy into the substrate, resulting in acoustic losses.

[0006] BAff谐振器的谐振频率主要由在声波传播路径中各材料层的厚度决定。 [0006] BAff resonant frequency of the resonator is determined mainly by the thickness of the material layers in the acoustic wave propagation path. 由于沉积的薄膜厚度不是完全均勻的,所以在整个晶圆范围内器件的谐振频率会有所不同。 Since the deposited film thickness is not completely uniform, so that the entire range of the resonance frequency of the device wafer will vary. 为了减小谐振频率的差异,有必要进行频率修正工序,其可以将谐振频率间的差异从几十兆赫兹调整到几兆赫兹,从而达到较好的良率。 In order to reduce the difference in the resonance frequency, the frequency correction step is necessary, which may be the difference between the resonance frequency adjusting from a few megahertz to tens of megahertz, so as to achieve a better yield. 在BAW谐振器中,我们将BAW谐振器的谐振频率随顶层厚度的变化定义为修正灵敏度,修正灵敏度的单位为kHz/A。 In BAW resonators, we define the variation of the resonance frequency of the BAW resonator with the top layer thickness is corrected sensitivity, the sensitivity correction unit kHz / A. 例如,lOkHz/A表示顶层厚度每变化1A,谐振器的谐振频率就会变化10kHz。 For example, lOkHz / A represents the top layer thickness variation per 1A, the resonant frequency of the resonator will change 10kHz. 修正灵敏度与谐振频率成正比,通常2GHz 的谐振器的修正灵敏度在25〜lOOkHz/Α范围之内。 Correcting sensitivity correction and the resonance frequency is proportional to the sensitivity of the resonator is usually in the 2GHz 25~lOOkHz / Α range. 当BAW谐振器的频率上升到5GHz时,谐振器的薄膜厚度会变小,修正灵敏度可以高达250kHz/A。 When the frequency of the BAW resonators is increased to 5GHz, the film thickness of the resonator becomes small, sensitivity can be corrected up to 250kHz / A. 调整具有如此高的修正灵敏度的晶圆,使其频率差异达到很小是很困难的。 Adjustment of such a high sensitivity correction wafer, so that a small difference in frequency is very difficult to achieve. [0007] 因此,上述的诸多缺陷和不足需要得到很好的解决。 [0007] Therefore, the above many defects and deficiencies need to be solved. 发明内容 SUMMARY

[0008] 本发明所要解决的技术问题是,提供一种可以提高声波谐振器对环境变化和自身老化的抵抗能力的复合体声波谐振器。 [0008] The present invention solves the technical problem is to provide a composite acoustic wave resonator can be improved bulk acoustic wave resonator to environmental changes and aging of the resistance itself.

[0009] 本发明所采用的技术方案是:一种声波谐振器,包括: [0009] The technical proposal of the present invention is: An acoustic wave resonator, comprising:

[0010] (a)带有空气腔的基底; [0010] (a) a base having an air chamber;

[0011] (b)在基底上形成并位于空气腔之上的第一低、高声阻抗层对; [0011] (b) a first formed and positioned above the lower air chamber on a substrate layer of high acoustic impedance;

[0012] (c)在第一低、高声阻抗层对上形成的种子层; [0012] (c) a first low acoustic impedance layer is formed on the seed layer;

[0013] (d)在种子层上形成的第一电极; [0013] (d) a first electrode formed on the seed layer;

[0014] (e)在第一电极上形成的压电层; [0014] (e) a piezoelectric layer formed on the first electrode;

[0015] (f)在压电层上形成的第二电极; [0015] The second electrode (f) is formed on the piezoelectric layer;

[0016] (g)在第二电极上形成的第二低、高声阻抗层对; [0016] (g) a second lower electrode formed on the second, high acoustic impedance layer;

[0017] (h)在第二低、高声阻抗层对上形成的钝化层。 [0017] (h) a second low acoustic impedance layer is a passivation layer formed thereon.

[0018] 所述的第一低、高声阻抗层对包括位于空气腔之上的第一高声阻抗层,和位于第一高声阻抗层与种子层之间的第一低声阻抗层; [0018] The first low acoustic impedance layer comprises a first acoustic impedance layer located over an air chamber, and a first layer of low acoustic impedance between the acoustic impedance of the first layer and the seed layer;

[0019] 所述的第二低、高声阻抗层对包括在第二电极上形成的第二低声阻抗层,和在第二低声阻抗层与钝化层之间形成的第二高声阻抗层。 [0019] the second low, high acoustic impedance layer comprises a second low acoustic impedance layer formed on the second electrode, and a second loud low acoustic impedance between the second layer and a passivation layer formed impedance layer.

[0020] 所述的第一和第二低声阻抗层均由声阻抗低于20Mrayl的第一材料组成;所述的第一和第二高声阻抗层均由声阻抗高于40Mrayl的第二材料组成。 [0020] The first and second acoustic impedance less than the acoustic impedance of the first layer by the material composition of 20Mrayl; said first and second layer of high acoustic impedance than the acoustic impedance by the second of 40Mrayl Material composition.

[0021] 所述的第一材料包括氧化硅、铝、碳掺杂氧化硅、纳米多孔甲基倍半硅氧烷、纳米多孔氢倍半硅氧烷、包含MSQ和HSQ的纳米多孔混合物、纳米玻璃、气凝胶、干凝胶、旋涂玻璃、聚对二甲苯、SiLK或苯并环丁烯; [0021] said first material comprises silicon oxide, aluminum, carbon doped silicon oxide, nano-porous methyl silsesquioxane, hydrogen silsesquioxane nanoporous, comprising a mixture of MSQ and HSQ nanoporous of nano glass, airgel, xerogel, spin-on glass, parylene, benzocyclobutene, or SiLK;

[0022] 所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化 [0022] the second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, tantalum pentoxide, hafnium oxide, aluminum oxide, chromium silicide, carbide, niobium oxide, rhenium, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide,

硅、类金刚石或硅掺杂的类金刚石。 Silicon, diamond or diamond-like carbon doped silicon.

[0023] 所述的第一低声阻抗层和第二低声阻抗层、第一高声阻抗层和第二高声阻抗层的厚度范围均为20nm〜lOOOnm。 [0023] The acoustic impedance of the first layer and the second layer of low acoustic impedance, thickness of the first layer and the second acoustic impedance acoustic impedance layers are 20nm~lOOOnm.

[0024] 形成所述的钝化层的材料包括碳化硅、氧化铝、金刚石、类金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 [0024] The material forming the passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer, or a combination thereof.

[0025] 形成所述的种子层的材料包括氮化铝、氮氧化铝、氮化钨、氮化钛钨、氧化硅、氮化硅或碳化硅,或是它们的组合。 Material of the seed layer [0025] The formed include aluminum nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silicon oxide, silicon nitride or silicon carbide, or a combination thereof.

[0026] 一种声波谐振器,包括: [0026] An acoustic wave resonator, comprising:

[0027] (a)基底; [0027] (a) a substrate;

[0028] (b)由基底支撑的第一电极; [0028] (b) a first electrode supported by a substrate;

[0029] (c)在第一电极上形成的压电层; [0029] (c) a piezoelectric layer formed on the first electrode;

[0030] (d)在压电层上形成的第二电极; [0030] (d) a second electrode formed on the piezoelectric layer;

[0031] (e)与第一或第二电极相连的一对低、高声阻抗层对; [0031] (e) the first or second electrode connected to a pair of low, high acoustic impedance layer;

[0032] (f)若低、高声阻抗层对与第一电极相连,则钝化层形成于第二电极之上,若低、高声阻抗层对与第二电极相连,则钝化层形成于低、高声阻抗层对之上。 [0032] (f) If the low acoustic impedance layer connected to the first electrode, the passivation layer is formed over the second electrode, if the low acoustic impedance layer is connected to the second electrode, the passivation layer formed in the low acoustic impedance layer on the right.

[0033] 所述的基底带有空气腔,低、高声阻抗层对在基底上形成,其位于空气腔之上,并与第一电极相连。 [0033] The substrate with an air chamber, low acoustic impedance layer formed on the substrate, which is located above the air chamber, and connected to the first electrode.

[0034] 所述的基底带有空气腔或声学镜,第一电极在基底上形成并位于空气腔或声学镜之上,低、高声阻抗层对与第二电极相连。 [0034] The substrate with an air chamber or an acoustic mirror, a first electrode formed on the substrate and over the air cavity or an acoustic mirror, low acoustic impedance layer connected to the second electrode.

[0035] 所述的低、高声阻抗层对包括一层低声阻抗层和一层高声阻抗层。 [0035] said lower layer comprises a layer of high acoustic impedance layer and a low acoustic impedance of the high acoustic impedance layers.

[0036] 所述的低声阻抗层位于压电层与高声阻抗层之间。 According to [0036] a low acoustic impedance layer is located between the piezoelectric layer and the acoustic impedance layer.

[0037] 所述的低声阻抗层由声阻抗低于20Mrayl的第一材料所形成;所述的高声阻抗层由声阻抗高于40Mrayl的第二材料形成。 Low acoustic impedance layers [0037] of the first material below the acoustic impedance 20Mrayl formed; the second layer of high acoustic impedance material of higher acoustic impedance than 40Mrayl formed.

[0038] 所述的第一材料包括氧化硅、铝、碳掺杂氧化硅、纳米多孔甲基倍半硅氧烷、纳米多孔氢倍半硅氧烷、包含MSQ和HSQ的纳米多孔混合物、纳米玻璃、气凝胶、干凝胶、旋涂玻璃、聚对二甲苯、SiLK或苯并环丁烯; [0038] said first material comprises silicon oxide, aluminum, carbon doped silicon oxide, nano-porous methyl silsesquioxane, hydrogen silsesquioxane nanoporous, comprising a mixture of MSQ and HSQ nanoporous of nano glass, airgel, xerogel, spin-on glass, parylene, benzocyclobutene, or SiLK;

[0039] 所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化 [0039] the second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, tantalum pentoxide, hafnium oxide, aluminum oxide, chromium silicide, carbide, niobium oxide, rhenium, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide,

硅、类金刚石或硅掺杂的类金刚石。 Silicon, diamond or diamond-like carbon doped silicon.

[0040] 所述的低声阻抗层与高声阻抗层的厚度范围均为20nm〜lOOOnm。 The thickness range of [0040] the high acoustic impedance layer and a low acoustic impedance layer are 20nm~lOOOnm.

[0041] 所述的钝化层的形成材料包括碳化硅、氧化铝、金刚石、类碳金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 The material forming said [0041] The passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer, or a combination thereof.

[0042] 一种声波谐振器,包括: [0042] An acoustic wave resonator, comprising:

[0043] (a)基底; [0043] (a) a substrate;

[0044] (b)由基底支撑的第一电极; [0044] (b) a first electrode supported by a substrate;

[0045] (C)在第一电极上形成的压电层; [0045] (C) a piezoelectric layer formed on the first electrode;

[0046] (d)在压电层上形成的第二电极; [0046] (d) a second electrode formed on the piezoelectric layer;

[0047] (e)在第二电极上形成的钝化层, [0047] (e) a passivation layer formed on the second electrode,

[0048] 所述的第一电极和第二电极中至少有一个包含一对低、高声阻抗层对。 [0048] The first electrode and the second electrode comprises at least a pair of low, high acoustic impedance layer pair.

[0049] 所述的基底带有空气腔,第一电极包括在基底上形成并位于空气腔之上的一对低、高声阻抗层对。 [0049] The substrate with an air chamber, a first electrode formed on the substrate and comprising one pair positioned above the lower air chamber, high acoustic impedance layer pair.

[0050] 所述的基底带有空气腔或声学镜,第一电极包括一层金属电极,该金属电极在基底上形成并位于空气腔或声学镜之上。 [0050] The substrate with an air chamber or an acoustic mirror, the first electrode comprises a layer of a metal electrode, the metal electrode is formed and positioned above the air chamber or an acoustic mirror on a substrate.

[0051] 所述的低、高声阻抗层对包括一层低声阻抗层和一层高声阻抗层。 [0051] said lower layer comprises a layer of high acoustic impedance layer and a low acoustic impedance of the high acoustic impedance layers.

[0052] 所述的低声阻抗层位于压电层与高声阻抗层之间。 Low acoustic impedance layers [0052] is positioned between the piezoelectric layer and the acoustic impedance layer.

[0053] 所述的低声阻抗层由声阻抗低于20Mrayl的第一材料所形成;所述的高声阻抗层由声阻抗高于40Mrayl的第二材料形成。 Low acoustic impedance layers [0053] of the first material below the acoustic impedance 20Mrayl formed; the second layer of high acoustic impedance material of higher acoustic impedance than 40Mrayl formed.

[0054] 所述的第一材料包括铝或铝合金;所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化硅、类金刚石或硅掺杂的类金刚石。 [0054] The first material comprises aluminum or an aluminum alloy; said second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, tantalum pentoxide, hafnium oxide, aluminum oxide, chromium silicide, carbide niobium, rhenium oxide, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, silicon carbide, diamond or diamond-like carbon doped silicon.

[0055] 所述的低声阻抗层与高声阻抗层的厚度范围均为20nm〜lOOOnm。 The thickness range of [0055] the high acoustic impedance layer and a low acoustic impedance layer are 20nm~lOOOnm.

[0056] 所述的钝化层的形成材料包括碳化硅、氧化铝、金刚石、类碳金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 The material forming said [0056] The passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer, or a combination thereof. [0057] —种在基底上加工的声波谐振器,包括: [0057] - on the kind of substrate processing acoustic resonator, comprising:

[0058] (a)种子层; [0058] (a) a seed layer;

[0059] (b)谐振结构,所述的谐振结构包含在种子层上形成的第一电极、在第一电极上形成的压电层以及在压电层上形成的第二电极; [0059] (b) a resonant structure, the resonant structure comprises a first electrode formed on the seed layer, a piezoelectric layer and a second electrode formed on the piezoelectric layer formed on the first electrode;

[0060] (c)与谐振结构相关联的复合层,其可以提高声波谐振器对环境变化和自身老化的抵抗能力,大幅降低修正灵敏度,或是优化声波谐振器的色散特性。 [0060] (c) the composite layer associated with the resonant structure, which can increase acoustic wave resonator to environmental changes and their aging resistance, greatly reduced the sensitivity correction, or to optimize the dispersion characteristics of the acoustic wave resonator.

[0061] 所述的复合层结构包括一系列具有高声阻抗的第一材料层和具有低声阻抗的第二材料层,其中高声阻抗材料层与低声阻抗材料层交替叠放。 [0061] The composite layer structure comprises a series of first material layer and the second layer having a low acoustic impedance material having a high acoustic impedance, wherein the layer of high acoustic impedance material and low acoustic impedance material layers stacked alternately.

[0062] 所述的复合层结构中的各层厚度都为谐振器的谐振频率下各材料层中声波四分之一波长的奇数倍。 [0062] The thickness of each layer of the composite layer structure are layers of material at the resonance frequency of the resonator in an odd multiple of a quarter wavelength of the acoustic wave.

[0063] 所述的复合层结构包括与种子层相邻的具有低声阻抗的第一材料层,和在第一材料层上形成的具有高声阻抗的第二材料层,这样第一材料层就位于种子层与第二材料层之间。 [0063] The composite layer structure comprises a seed layer adjacent to the first layer of material having a low acoustic impedance, and a second layer of material having a high acoustic impedance is formed on the first material layer, such that the first material layer it is located between the seed layer and the second material layer.

[0064] 所述的复合层结构进一步包括在谐振结构的第二电极上形成的具有低声阻抗的第三材料层,和在第三材料层上形成的具有高声阻抗的第四材料层。 [0064] The third layer of material having a low acoustic impedance layer of the composite structure further comprises forming a second electrode on the resonant structure, and a fourth material layer formed on the third material layer having a high acoustic impedance.

[0065] 所述的复合层结构包括在谐振结构的第二电极上形成的具有低声阻抗的第一材料层,和在第一材料层上形成的具有高声阻抗的第二材料层。 [0065] The composite layer structure comprises a first material having a low acoustic impedance layer formed on the second electrode of the resonant structure, and a second material having a high acoustic impedance layer formed on the first material layer.

[0066] 本发明的复合体声波谐振器,涉及应用复合层结构的体声波(BAW)谐振器和滤波器,其中复合层结构是由一系列高声阻抗材料层和低声阻抗材料层交替叠放而形成的,这样可以提高声波谐振器对环境变化和自身老化的抵抗能力,减小频率修正灵敏度,和/或优化声波谐振器的色散特性。 [0066] The composite acoustic wave resonator of the present invention relates to the use of the composite layer structure bulk acoustic wave (the BAW) resonators and filters, wherein the composite layer structure is composed of a series of high acoustic impedance material and a layer of low acoustic impedance material layers are alternately laminated formed by the discharge, this can increase the sensitivity correction, and / or optimize the dispersion characteristics of the acoustic wave resonator acoustic wave resonator resistance to environmental changes and aging itself, reduce the frequency.

附图说明 BRIEF DESCRIPTION

[0067] 图1是根据本发明的一个实施例而得到的声波谐振器的截面图; [0067] FIG. 1 is a sectional view of the acoustic wave resonator according to one embodiment of the present invention is obtained;

[0068] 图2是根据本发明的另一个实施例而得到的声波谐振器的截面图; [0068] FIG. 2 is a sectional view of the acoustic wave resonator according to another embodiment of the present invention is obtained;

[0069] 图3是根据本发明的又一个实施例而得到的声波谐振器的截面图; [0069] FIG. 3 is a sectional view of the acoustic wave resonator according to yet another embodiment of the present invention is obtained;

[0070] 图4是根据本发明的再一个实施例而得到的声波谐振器的截面图; [0070] FIG. 4 is a sectional view of the acoustic wave resonator according to a further embodiment of the invention is obtained;

[0071] 图5是根据本发明的另一个实施例而得到的声波谐振器的截面图; [0071] FIG. 5 is a sectional view of the acoustic wave resonator according to another embodiment of the present invention is obtained;

[0072] 图6是根据本发明的又一个实施例而得到的声波谐振器的截面图; [0072] FIG. 6 is a sectional view of the acoustic wave resonator according to yet another embodiment of the present invention is obtained;

[0073] 图7是通过表格方式归纳出本发明中不同结构或不同实施例的2GHz谐振器的修正灵敏度和机电耦合系数; [0073] FIG. 7 is summarized in the correction sensitivity and the electromechanical coupling coefficient of the present invention different structures or resonator 2GHz different embodiments by way of a table;

[0074] 图8(a)是图7中编号为2的声波谐振器的仿真色散曲线; [0074] FIG. 8 (a) is numbered in FIG. 7 is a dispersion curve acoustic wave resonator simulation 2;

[0075] 图8(b)是图7中编号为2的声波谐振器内部相对位移分布的仿真结果; [0075] FIG. 8 (b) in FIG. 7 are numbered relative displacement of the internal distribution of the acoustic wave resonator simulation 2;

[0076] 图9是图7中编号为3的声波谐振器的仿真色散曲线; [0076] FIG. 9 is numbered in FIG. 7 is a dispersion curve acoustic wave resonator simulation 3;

[0077] 图10是图7中编号为6的声波谐振器的内部相对位移分布的仿真结果; [0077] FIG. 10 is a diagram numbered 7 to internal acoustic wave resonator 6 relative displacement distribution simulation results;

[0078] 图11是传统声波谐振器的截面图; [0078] FIG. 11 is a sectional view of a conventional acoustic wave resonator;

[0079] 图12(a)是图7中编号为1的传统声波谐振器的仿真色散曲线; [0079] FIG. 12 (a) is a diagram numbered 7 is a dispersion curve of a conventional simulated acoustic wave resonator 1;

[0080] 图12(b)是图7中编号为1的传统声波谐振器内部相对位移分布的仿真结果。 [0080] FIG. 12 (b) are numbered in FIG. 7 for the internal distribution of the relative displacement of a conventional acoustic wave resonator simulation results. 具体实施方式 Detailed ways

[0081] 下面结合实施例和附图对本发明的复合体声波谐振器做出详细说明。 [0081] The following Examples and detailed description of the accompanying drawings to make the composite acoustic wave resonator according to the present invention.

[0082] 下面参考附图1-10以实施例的形成对本发明进行说明。 [0082] Next, with reference to the accompanying drawings 1-10 to form embodiments of the present invention will be described. 根据本发明的目的,本发明一方面涉及到应用复合层结构的体声波谐振器,其中的复合层结构是由一系列高声阻抗材料和低声阻抗材料相间组成的,从而可以提高声波谐振器对环境变化和自身老化的抵抗能力,减小修正灵敏度,和/或优化声波谐振器的色散特性。 The object of the present invention, an aspect of the present invention relates to bulk acoustic wave resonator of the application of the composite layer structure, wherein the composite layer structure is composed of a series of low acoustic impedance and high acoustic impedance material composed of white material, thereby improving acoustic wave resonator resistance to environmental changes and aging itself, reducing the sensitivity correction, and / or to optimize the dispersion characteristics of the acoustic wave resonator.

[0083] 尽管本发明的以下描述都是基于FBAR的典型实施例,但是本发明可以同时应用于FBAR和SMR中。 [0083] Although the following description of the present invention are exemplary FBAR-based embodiment, the present invention may be applied simultaneously FBAR and SMR. 根据本发明,复合FBAR包括一个FBAR和至少一对在FBAR中的低、高声阻抗层对。 According to the present invention, a composite FBAR and FBAR comprising at least one FBAR is in the low, high acoustic impedance layer pair. 如图7的表格所示,具有一对低、高声阻抗层对的复合FBAR(如谐振器编号2-9) 具有很小的修正灵敏度,这样有利于频率的修正,并且利于加工出具有较高良率的高频滤波器,同时相对于传统的FBAR结构(如谐振器编号1)其会降低成本。 As shown in the table in FIG. 7, it has a pair of lower acoustic impedance FBAR composite layer (e.g., resonator No. 2-9) has little sensitivity correction, it is a good frequency correction, and having more facilitate processing high yield of high-frequency filter, while with respect to the conventional FBAR structures (e.g., resonator No. 1) which will reduce costs.

[0084] 图1是根据本发明的一个实施例而得到的声波谐振器100。 [0084] Figure 1 is an embodiment of the present invention obtained by the acoustic wave resonator 100. 在此典型实施例中, 声波谐振器100包括基底110 ;谐振结构140,其包含第一电极142、在第一电极142上形成的压电层144和在压电层144上形成的第二电极146 ;以及复合层结构150,其包含在谐振结构140的第二电极146上形成的低声阻抗层152和在低声阻抗层152上形成的高声阻抗层154。 In this exemplary embodiment, the acoustic wave resonator 100 includes a substrate 110; resonant structure 140, which includes a first electrode 142, the piezoelectric layer 144 is formed on the first electrode and the second electrode 142 is formed on the piezoelectric layer 144 146; 150 and a composite layer structure comprising a low acoustic impedance layer is formed on the second electrode 146 of the resonant structure 140 and high acoustic impedance layer 152 is formed on the low acoustic impedance layer 152,154. 换句话说,低声阻抗层152位于压电层144与高声阻抗层IM之间。 In other words, low acoustic impedance layer 152 positioned between the piezoelectric layer 144 and the high acoustic impedance layer IM. 钝化层160在复合层结构150的高声阻抗层巧4之上形成,形成钝化层的材料有碳化硅(SiC)、氧化铝(Al2O3)、类金刚石(DLC)、氧化硅(SiO2)、氮化硅(SiN)或疏水性聚合物(hydrophobic polymer),或是类似的材料。 The passivation layer 160 in the multilayer structure 150 of the high acoustic impedance layer 4 is formed on coincidence, the material forming the passivation layer is silicon carbide (SiC), alumina (Al2O3), diamond (the DLC), silicon oxide (SiO2) , silicon nitride (SiN) or a hydrophobic polymer (hydrophobic polymer), or similar materials.

[0085] 在一个实施例中,在基底110的内部或上部带有空气腔或声学镜130,谐振结构140的第一电极142在基底110上形成并且位于空气腔或声学镜130之上。 [0085] In one embodiment, the inner or upper substrate 110 with an air chamber or an acoustic mirror 130, a resonant structure 140, the first electrode 142 is formed on the substrate 110 and located above the air chamber 130 or an acoustic mirror. 或者,空气腔或声学镜130位于介质层120之内,其中介质层120形成于基底110之上。 Alternatively, the air chamber 130 or an acoustic mirror 120 is located within the dielectric layer, wherein the dielectric layer 120 is formed over the substrate 110. 同时,谐振结构140的第一电极142在介质层120之上形成,并且其位于空气腔或声学镜130之上,如图1 所示。 Meanwhile, the first electrode 142 a resonant structure 140 is formed over the dielectric layer 120, and which is located above the air chamber or an acoustic mirror 130 as shown in FIG.

[0086] 低声阻抗层152由声阻抗低于20Mrayl的第一材料组成,高声阻抗层154由声阻抗高于40Mrayl的第二材料组成。 The first material 152 is lower than the acoustic impedance 20Mrayl by [0086] a low acoustic impedance layers, 154 a second material of higher acoustic impedance than 40Mrayl high acoustic impedance layers. 例如第一材料包括氧化硅(SiO2)、铝(Al)、碳掺杂氧化硅(⑶0)、纳米多孔甲基倍半硅氧烷(MSQ)、纳米多孔氢倍半硅氧烷(HSQ)、包含MSQ和HSQ的纳米多孔混合物(nano-porous mixtures of MSQ and HSQ)、纳米玻璃(nanoglass)、气凝胶(aerogel)、干凝胶(xerogel)、方宠涂玻璃(spin-on-glasses)、聚对二甲苯(parylene)、 SiLK或苯并环丁烯(BCB),但不局限于以上材料。 Example, the first material comprises silicon oxide (SiO2), aluminum (Al), carbon doped silicon oxide (⑶0), nano-porous methyl silsesquioxane (MSQ), hydrogen silsesquioxane nanoporous (HSQ), nanoporous mixture (nano-porous mixtures of MSQ and HSQ) comprising the HSQ and MSQ, nanoglasses (nanoglass), airgel (airgel), dry gel (xerogel), pet side coated glass (spin-on-glasses) , poly-para-xylylene (parylene), SiLK, or benzocyclobutene (BCB), but is not limited to the above materials. 第二材料包括钨(tungsten)、钼(molybdenum)、钼(platinum)、钌(ruthenium)、铱(iridium)、鹤铁(titanium tungsten)、 五氧化二|旦(tantalum pentoxide)、氧化韦合(hafnium oxide)、氧(aluminum oxide)、 娃化络(chromium silicide)、碳化铌(niobium carbide)、氧化谏(rhenium oxide)、碳化Ii (tantalum carbide) (tantalum nitride)、ϋϋ^ (titanium carbide)、_U It (titanium oxide)、碳化f凡(vanadium carbide) >MftlI^ (tungsten nitride)、氧化1¾ (tungsten oxide)、碳化锆(zirconium carbide)、碳化硅(SiC)、类金刚石(DLC)或硅掺杂的类金刚石(Si-DLC),但不局限于以上材料。 The second material comprises tungsten (tungsten), Mo (molybdenum), molybdenum (platinum), Ru (ruthenium), Ir (iridium), iron Crane (titanium tungsten), pentoxide | denier (tantalum pentoxide), HER oxide ( hafnium oxide), oxygen (aluminum oxide), baby of the envelope (chromium silicide), niobium carbide (niobium carbide), oxide Jian (rhenium oxide), carbide Ii (tantalum carbide) (tantalum nitride), ϋϋ ^ (titanium carbide), _U It (titanium oxide), where f carbide (vanadium carbide)> MftlI ^ (tungsten nitride), oxide 1¾ (tungsten oxide), zirconium carbide (zirconium carbide), silicon carbide (SiC), diamond-like carbon (DLC), or silicon-doped miscellaneous DLC (Si-DLC), but is not limited to the above materials.

[0087] 低声阻抗层152与高声阻抗层154的厚度可以相同或相差很大,它们的厚度范围在20nm〜IOOOnm之间。 [0087] The thickness of the low acoustic impedance and high acoustic impedance layer 152 layer 154 may be the same or very different, their thickness ranges between 20nm~IOOOnm. [0088] 根据本发明,在谐振结构140之上形成的低、高声阻抗层对152和巧4减小了声波谐振器100的频率修正灵敏度,进而有利于将声波谐振器100准确地修正到所需的谐振频率。 [0088] According to the present invention, a resonant structure 140 above the low acoustic impedance layer 152 and reduce the frequency of 4 coincidence sensitivity correction acoustic wave resonator 100, thereby facilitating the accurate correction 100 to the acoustic wave resonator the desired resonant frequency. 修正灵敏度的减小是因为减小了贮存在钝化层160内的声能,从而减小了修正工序对频率变化的影响。 Reduced sensitivity correction is reduced because the passivation layer 160 stored in the acoustic energy, thereby reducing the impact of frequency variation correction step. 如图7的表格所示,低、高声阻抗层对也会降低声波谐振器的机电耦合系数(Kff ),进而减小由此谐振器组成的滤波器的带宽。 As shown in Table 7, the low acoustic impedance layers will also reduce bandwidth acoustic wave resonator electromechanical coupling coefficient (Kff), thereby further reducing the filter composed of resonators.

[0089] 例如,编号2结构的声波谐振器100,其第一电极142、压电层144、第二电极146、 低声阻抗层152、高声阻抗层154和钝化层160的材料分别为Mo、AlN、Mo、Si02、W和SiO2, 各层的厚度分别为0. 21 μ m、1. 606 μ m、0. 21 μ m、0. 68 μ m、0. 636 μ m禾Π 0. 3 μ m。 [0089] For example, acoustic wave resonator structure 2 numeral 100, the material of which the first electrode 142, the piezoelectric layer 144, a second electrode 146, low acoustic impedance layer 152, a high acoustic impedance layer 154 and the passivation layer 160 are Mo, AlN, Mo, Si02, W and SiO2, the thickness of each layer of 0. 21 μ m, 1. 606 μ m, 0. 21 μ m, 0. 68 μ m, 0. 636 μ m Wo Π 0 . 3 μ m. 在此实施例中,低声阻抗层152和高声阻抗层154的厚度都分别为谐振器谐振频率下各层材料中对应波长的四分之一。 In this embodiment, the thickness of the high acoustic impedance 152 and low acoustic impedance layer 154 are layers of material layers corresponding to a quarter wavelength at the resonance frequency of the resonator. 或者,低声阻抗层152和高声阻抗层154的厚度可以小于或大于四分之一波长(如结构编号3和编号4),厚度范围倾向于在目标厚度的士15%之内,但也不仅仅局限于此范围之内。 Alternatively, the thickness of the low acoustic impedance and high acoustic impedance layer 152 layer 154 may be less than or greater than a quarter wavelength (e.g., Structure No. 3 and No. 4), intended to be within the range of thickness of 15% of the target thickness taxis, but It is not limited to this range.

[0090] 相应地,声波谐振器100的修正灵敏度下降到1. OkHz/A,这相对于传统的声波谐振器(如图7表格中的结构编号1)减小了约50倍。 [0090] Accordingly, the correction sensitivity of acoustic wave resonator 100 is decreased to 1. OkHz / A, which relative to conventional acoustic wave resonator (structure number as shown in the table 17) is reduced by about 50-fold. 同时声波谐振器100的X。 At the same time the acoustic wave resonator X. 100 相对于传统谐振器的Xi2,也有所减小。 With respect to a conventional resonator, Xi2, also decreased.

[0091] 如图8所示,对于这样的结构(编号2),在SiO2钝化层160的表面,归一化的位移幅值相比于传统声波谐振器要小很多,传统声波谐振器(编号1)的归一化的位移幅值如图12所示。 [0091] As shown in FIG. 8, for such a configuration (No. 2), the surface of the SiO2 passivation layer 160, the normalized displacement amplitudes compared to conventional acoustic wave resonator is much smaller, conventional acoustic wave resonator ( No. 1) the normalized displacement amplitude as shown in Fig. 相应地,SiO2钝化层160上吸收的物质对于谐振频率随时间漂移的影响很小,从而减小了声波谐振器受频率变化的影响,这种影响是由于声波谐振器与环境如空气或水汽的相互作用所致,并且很大程度上放宽了对封装气密性的要求。 Accordingly, the absorbent material 160 on the SiO2 passivation layer has little influence to the resonance frequency drift over time, thereby reducing the influence by the acoustic wave resonator frequency variation, this effect is due to the acoustic wave resonator and the environment such as air or moisture caused by interaction, and largely relaxed requirements on the package airtight. 复合层结构可能包含一系列的低、高声阻抗层,这些声阻抗层位于谐振结构的一侧或两侧,且材料薄膜位于空气腔之上,在SMR中,复合层结构只存在于谐振结构的顶层,因为在谐振结构的第一电极与基底之间已经有声学镜存在。 Composite layer structure may include a series of low acoustic impedance layer, the acoustic impedance of the layer is one or both sides of the resonant structure, and the material film located above the air chamber, in the SMR, the composite layer structure exists only in the resonant structure top, since the substrate between the first electrode and the resonant structure has the presence of an acoustic mirror.

[0092] 复合层结构在根据特殊应用要求改变声波谐振器的色散特性方面还有另一优点。 [0092] The composite layer structure changing acoustic wave resonator according to specific application requirements dispersion characteristics Yet another advantage. 图12(a)所示的为传统FBAR(结构编号1)的仿真色散曲线,这是II型谐振器,因为AlN是II型的压电材料,所以谐振器一阶厚度伸缩振动模式(TE-I)的截止频率与谐振器的串联谐振频率(fs)相同。 FIG. 12 (a) of the FBAR shown in conventional (structure No. 1) simulation dispersion curve, which is a resonator type II, type II because AlN is a piezoelectric material, a resonator-order thickness extension vibration mode (of TE- I) the cutoff frequency of the series resonant frequency of the resonator (fs) of the same. 通过在谐振器中加入具有合适厚度和机械材料参数(如密度、弹性常数、声速等等)的低、高声阻抗层,可以将FBAR或SMR的色散曲线类型从II型变为I型,或从I型变为II型。 By adding a low acoustic impedance layer having a suitable thickness and mechanical material properties (e.g., density, elastic constant, the speed of sound, etc.) in the resonator, FBAR type dispersion curve may or SMR changed from type II type I, or Form I from Form II changed. 一个具有编号2结构的复合FBAR谐振器的色散曲线如图8(a)所示。 A dispersion curve having a composite structure of a FBAR resonator numbered 2 in FIG 8 (a) shown in FIG. 此谐振器为I型声波谐振器,其TE-I模式的纵波截止频率高于第二剪切波的截止频率。 This resonator is a type I acoustic wave resonator longitudinal mode TE-I-wave cutoff frequency higher than the cutoff frequency of the second shear wave. 此外,引入复合层结构可以单独地改变色散强度,这可以通过对比图8(a)中的声波谐振器编号2与图9中的声波谐振器编号3的色散曲线得知。 In addition, the introduction of the composite layer structure may be separately changed strength dispersion, which can be by comparing Figures 8 (a) of the acoustic wave resonator numbered 2 in FIG. 9 No. acoustic wave resonator 3 that dispersion curves.

[0093] 另外,适当地改变压电层144、低声阻抗层152或/和高声阻抗层154的厚度,可以在保持声波谐振器100相对较高的夂不变的前提下,进一步减小修正灵敏度。 [0093] Further, appropriately changing the piezoelectric layer 144, a thickness 152 and / or acoustic impedance and low acoustic impedance layer 154 layer can be maintained acoustic wave resonator 100 at a relatively high without changing Wen further reduced correction sensitivity. 例如,表1 中的结构编号3,其压电层144、低声阻抗层152和高声阻抗层IM的厚度分别为1. 617 μ m、 0.66 μ m和0.63 μ m,这些厚度与结构编号2中相应的厚度相差很小。 For example, Table 1 for structure number 3, piezoelectric layer 144, and a low acoustic impedance layer 152 of the high acoustic impedance layer thicknesses of IM 1. 617 μ m, 0.66 μ m and 0.63 μ m, and the thickness of these structures ID 2 in the thickness corresponding to the difference is small. 此结构(编号3)的声波谐振器的修正灵敏度与分别为0. 64kHz/A和6. 02%。 This sensitivity correction structure (No. 3) with the acoustic wave resonator is 0. 64kHz / A and 6.02%, respectively. 与结构编号2的谐振器相比, 其修正灵敏度减小了35%,而Xi2,几乎没变。 Compared with the number of the resonator structure 2, the correction sensitivity is reduced by 35%, and Xi2, almost unchanged. 声波谐振器(编号3)的色散曲线如图9所示。 Acoustic wave resonator (No. 3) of the dispersion curve shown in Fig. 结构编号2〜5的声波谐振器基本上由相同的材料构成,但结构编号2〜5的声波谐振器的各层厚度有所不同。 No. 2 ~ 5 of the acoustic wave resonator structure substantially composed of the same material, but the structure of the acoustic wave resonator numbered 2 ~ 5 layers of different thickness. 材料层的厚度变化会导致各声波谐振器的修正灵敏度和夂^#有所不同。 The thickness change material layer may result in correction of the sensitivity of each acoustic wave resonator are different and Fan ^ #.

[0094] 形成低声阻抗层152和/或高声阻抗层IM的材料不同,会导致声波谐振器100的修正灵敏度和^Crt所不同。 [0094] forming a low acoustic impedance layer 152 and / or layers of different acoustic impedance material IM, the correction sensitivity will cause acoustic wave resonator 100 and ^ Crt different. 如图7表格所示的结构编号6,当第一电极142、压电层144、 第二电极146、低声阻抗层152、高声阻抗层IM和钝化层160分别由厚度为0.2μπι的Mo、 1. 62μ m 的Α1Ν、0. 2μπι 的Μο、0. 425 μ m 的CD0、0. 636 μ m 的W 禾口0. 3 μ m 的组成时, 声波谐振器100的修正灵敏度为0. 13kHz/A,其比传统声波谐振器的修正灵敏度(图7表格所示的编号1)约小了390倍,这主要是由于CDO的声阻抗非常低所致。 7 No. 6 of the tables, when the first electrode 142, the piezoelectric layer 144, a second electrode 146, low acoustic impedance layer 152, IM acoustic impedance layer 160 and the passivation layer are of a thickness of 0.2μπι Mo, 1. 62μ m in Α1Ν, 0. 2μπι of Μο, when the composition 0. 425 μ m of CD0,0. 636 μ m and W Wo port 0. 3 μ m, the sensitivity correction acoustic wave resonator 100 is 0 . 13kHz / a, which sensitivity correction than conventional acoustic wave resonator (FIG. 7 of table No. 1) of about 390 times smaller, mainly due to the acoustic impedance is very low due to the CDO. 声波谐振器100的 Acoustic wave resonator 100

为5. 91%,这比传统声波谐振器的小。 It was 5.91%, which is more than a small conventional acoustic wave resonator. 声波谐振器(编号6)的内部相对位移分布如图10所示。 Internal acoustic wave resonator (No. 6) relative displacement distribution shown in Fig.

[0095] 图2是据本发明的另一个实施例而得到的声波谐振器200。 [0095] According to FIG. 2 is another embodiment of the present invention obtained by the acoustic wave resonator 200. 与图1所示的声波谐振器100相似,声波谐振器200也包含谐振结构M0,其具有第一电极(底电极)242、在第一电极242上形成的压电层244和在压电层244上形成的第二电极(顶电极)M6 ;复合层结构250,其包括低声阻抗层252和高声阻抗层254。 Similar acoustic wave resonator 100 shown in FIG. 1, the acoustic wave resonator 200 comprises a resonator structure M0, having a first electrode (bottom electrode) 242, the piezoelectric layer 244 is formed on the first electrode 242 and the piezoelectric layer a second electrode (top electrode) 244 formed on the M6; composite layer structure 250, which includes a low acoustic impedance and high acoustic impedance layer 252 layer 254. 复合层结构250与谐振结构MO的底电极242相邻。 Multilayer structure of the resonant structure 250 and the bottom electrode 242 of neighboring MO. 另有种子层270形成于谐振结构240与复合层结构250之间。 Another seed layer 270 is formed between the resonant structure 240 and the composite layer structure 250.

[0096] 基底210带有空气腔230。 [0096] substrate 210 with an air chamber 230. 高声阻抗层邪4在基底210上形成并位于空气腔230之上。 Evil high acoustic impedance layer 4 is formed on the substrate 210 and over the air chamber 230. 低声阻抗层252在高声阻抗层邪4上形成。 Low acoustic impedance layer 252 is formed on the acoustic impedance layer 4 evil. 种子层270在复合层结构250的低声阻抗层252上形成,形成种子层270的材料有氮化铝(aluminum nitride)、氮氧化ίη (aluminumoxynitride) > MftlI^ (tungsten nitride) > MftlItI^ (titanium tungsten nitride)、氧化娃(silicon oxide)、氮化娃(silicon nitride)、碳化娃(silicon carbide),或类似的材料。 The seed layer 270 on the composite layer of low acoustic impedance layer 252 of the structure 250 is formed, the seed layer 270 is formed with a material of aluminum nitride (aluminum nitride), oxynitride ίη (aluminumoxynitride)> MftlI ^ (tungsten nitride)> MftlItI ^ (titanium tungsten nitride), baby oxide (silicon oxide), baby nitride (silicon nitride), baby carbide (silicon carbide), or similar materials. 谐振结构MO的底电极242形成于种子层270之上。 MO bottom electrode resonant structure 242 is formed on the seed layer 270. 钝化层260形成于谐振结构MO的顶电极246之上,形成钝化层沈0的材料有碳化硅(SiC)、氧化铝(Al2O3)、类金刚石(DLC)、氧化硅(SiO2)、氮化硅(SiN)、疏水性聚合物(hydrophobic polymer),或是类似的材料。 The passivation layer 260 is formed over the top electrode 246 of the resonant structure MO forming material of the passivation layer of silicon carbide sink 0 (SiC), alumina (Al2O3), diamond (the DLC), silicon oxide (SiO2), nitrogen silicon (SiN), a hydrophobic polymer (hydrophobic polymer), or similar materials. 如图2所示,空气腔230也可以位于介质层220中,其中介质层220形成于基底210之上。 As shown, the air chamber 230 may be located on the dielectric layer 2202, wherein the dielectric layer 220 is formed over the substrate 210. 并且高声阻抗层2M在介质层220上形成且位于空气腔230 之上。 2M and high acoustic impedance layer formed on the dielectric layer 220 and located above the air chamber 230. 使用复合层结构250可以提高声波谐振器对外部环境变化和自身老化的抵抗能力, 并且可以根据需要改变谐振器的色散特性。 A composite layer structure can be improved acoustic wave resonator 250 to the external environment, and their aging resistance, and dispersion characteristics of the resonator may be changed as needed.

[0097] 与图1所示的声波谐振器100的一对低、高声阻抗层对152和IM相似,谐振器200的低声阻抗层252由声阻抗低于20Mrayl的材料组成,包括氧化硅(SiO2)、铝(Al)、 碳掺杂氧化硅(⑶0)、纳米多孔甲基倍半硅氧烷(MSQ)、纳米多孔氢倍半硅氧烷(HSQ)、包含MSQ和HSQ的纳米多孔混合物(nano-porous mixtures of MSQ and HSQ)、纳米玻璃(nanoglass)、气凝胶(aerogel)、干凝胶(xerogel)、方宠涂玻璃(spin-on-glasses)、聚对二甲苯(parylene)、SiLK或苯并环丁烯(BCB),但并不局限于以上材料。 [0097] and a pair of low acoustic wave resonator 100 shown in Figure 1, the high acoustic impedance layer 152 and IM similar low acoustic impedance of the resonator 252 by the layer 200 is less than the acoustic impedance 20Mrayl material, including silicon oxide (SiO2), aluminum (Al), carbon doped silicon oxide (⑶0), nano-porous methyl silsesquioxane (MSQ), hydrogen silsesquioxane nanoporous (HSQ), MSQ and HSQ comprising nanoporous The mixture (nano-porous mixtures of MSQ and HSQ), nano-glass (nanoglass), airgel (aerogel), dry gel (xerogel), pet side coated glass (spin-on-glasses), parylene (parylene ), SiLK, or benzocyclobutene (BCB), but is not limited to the above materials. 高声阻抗层254由声阻抗高于40Mrayl的材料组成,包括钨(tungsten)、钼(molybdenum)、钼(platinum)、 钌(ruthenium)、铱(iridium)、鹤铁(titanium tungsten)、五氧化二组(tantalum pentoxide)、氧化,合(hafniumoxide)、氧化招(aluminum oxide)、娃化络(chromium silicide)、碳化铌(niobium carbide)、氧化谏(rhenium oxide)、碳化组(tantalum carbide) > Mft.Ii (tantalum nitride) > ii^^blt (titanium carbide) > ¢14^.It (titaniumoxide)、碳化f凡(vanadium carbide) > M ft. 1¾ (tungsten nitride)、氧化1¾ (tungsten oxide)、碳化锆(zirconium carbide)、碳化硅(SiC)、类金刚石(DLC)或硅掺杂的类金刚石(Si-DLC),但并不局限于以上材料。 A high acoustic impedance layer 254 is higher than the acoustic impedance 40Mrayl material, including tungsten (Tungsten), Mo (Molybdenum), molybdenum (Platinum), Ru (Ruthenium), Ir (Iridium), Crane iron (titanium tungsten), pentoxide two groups (tantalum pentoxide), oxidation, bonding (hafniumoxide), oxide strokes (aluminum oxide), baby of the envelope (chromium silicide), niobium carbide (niobium carbide), oxide Jian (rhenium oxide), carbide group (tantalum carbide)> Mft.Ii (tantalum nitride)> ii ^^ blt (titanium carbide)> ¢ 14 ^ .It (titaniumoxide), where f carbide (vanadium carbide)> M ft. 1¾ (tungsten nitride), oxide 1¾ (tungsten oxide), zirconium carbide (zirconium carbide), silicon carbide (SiC), diamond-like carbon (DLC), or diamond-like carbon doped silicon (Si-DLC), but is not limited to the above materials.

[0098] 低声阻抗层252和高声阻抗层254的厚度范围都为20nm〜lOOOnm。 [0098] a thickness ranging from a low acoustic impedance layer 252 and high acoustic impedance layer 254 are 20nm~lOOOnm.

[0099] 图3是根据本发明的又一个实施例而得到的声波谐振器300,此谐振器具有两对低、高声阻抗层对350A和350B,从而可以减小声波谐振器300的修正灵敏度并提高声波谐振器对外部环境变化和自身老化的抵抗能力。 [0099] FIG. 3 is 300, this resonator has two pairs of low acoustic wave resonator according to still another embodiment of the present invention is obtained, of high acoustic impedance layers 350A and 350B, the correction can be reduced so that the sensitivity of acoustic wave resonator 300 and improve the acoustic resonator resistance to changes in the external environment and their own aging. 如图3所示,声波谐振器300包括带有空气腔330的基底310 ;在基底310上形成并位于空气腔330之上的第一低、高声阻抗层对350A ;在第一低、高声阻抗层对350A上形成的种子层370 ;谐振结构340,其包含在种子层370上形成的底电极;342、在底电极342上形成的压电层344和在压电层344上形成的顶电极346 ; 在谐振结构340的顶电极346上形成的第二低、高声阻抗层对350B ;以及在第二低、高声阻抗层对350B上形成的钝化层360。 3, acoustic wave resonator 300 includes a substrate 330 with an air chamber 310; a first formed and positioned above the lower air chamber 330 on the substrate 310, acoustic impedance layer 350A; first low, high acoustic impedance layer formed on the seed layer 350A 370; 342, a piezoelectric layer formed on the bottom electrode 342 and 344 formed on the piezoelectric layer 344; a resonant structure 340, which includes a bottom electrode formed on the seed layer 370 a top electrode 346; a second lower electrode formed on the top 346 of the resonant structure 340, the high acoustic impedance layer 350B; and a second low acoustic impedance layer 350B formed on the passivation layer 360.

[0100] 第一低、高声阻抗层对350A包括在位于空气腔330之上的第一高声阻抗层3M和位于第一高声阻抗层354与种子层370之间的第一低声阻抗层352。 [0100] a first low acoustic impedance layer 350A comprises a first acoustic impedance between the air chamber 330 located above the first layer 3M and the acoustic impedance of the first acoustic impedance layer 354 and the seed layer 370 is positioned layer 352. 第二低、高声阻抗层对350B包括在位于顶电极346之上的第二低声阻抗层356和位于第二低声阻抗层356与钝化层360之间的第二高声阻抗层358。 A second low acoustic impedance layer 350B includes a top electrode 346 is located above a second low acoustic impedance layer 356 and the second layer is located between the acoustic impedance of the second acoustic impedance layer 360 and the passivation layer 356 358 .

[0101] 第一和第二低声阻抗层352和356由声阻抗低于20Mrayl的相同或不同的材料组成。 [0101] The first and second low acoustic impedance layers 352 and 356 of the same material or different acoustic impedance below 20Mrayl composition. 前面所描述的用于形成低声阻抗层的材料同样可以用于形成第一和第二低声阻抗层352和356。 Material for forming the low acoustic impedance layer previously described can likewise be used for 352 and 356 form first and second low acoustic impedance layers. 第一和第二高声阻抗层3M和358由声阻抗高于40Mrayl的相同或不同的材料组成。 The first and second acoustic impedance layer 3M and 358 of the same material or different acoustic impedance than 40Mrayl composition. 前面所描述的用于形成高声阻抗层的材料同样可以用于形成第一和第二高声阻抗层3M和358。 Material for forming the high acoustic impedance layer previously described can likewise be used for the first and second acoustic impedance layer 3M and 358 are formed. 此外,第一和第二低声阻抗层352和356的厚度可以与第一和第二高声阻抗层3M和358的厚度相同或相差很大。 Further, the first and second low acoustic impedance layers 352 and 356 may be the same as the thickness of the first and second acoustic impedance layer thickness of 358 or 3M vary greatly.

[0102] 空气腔330也可以位于介质层320中,其中介质层320形成于基底310之上。 [0102] the air chamber 330 may be located on the dielectric layer 320, wherein the dielectric layer 320 is formed over the substrate 310. 并且高声阻抗层3M在介质层320之上形成,并位于空气腔330之上,如图3所示。 3M and high acoustic impedance layer 320 is formed over the dielectric layer, and over the air cavity 330, as shown in FIG.

[0103] 图4是根据本发明的另一个实施例而得到的声波谐振器400。 [0103] Figure 4 is another embodiment of the present invention obtained by the acoustic wave resonator 400. 在此实施例中,声波谐振器400包括在基底410上形成的底电极442,其中基底410具有空气腔或声学镜430, 此空气腔或声学镜430位于底电极442之下;在底电极442上形成的压电层444 ;在压电层444上形成的一对低、高声阻抗层对450以及在低、高声阻抗层对450上形成的钝化层460。 In this embodiment, the bottom electrode 400 comprises an acoustic wave resonator formed on a substrate 410 442, wherein the substrate has an air chamber 410 or an acoustic mirror 430, the air chamber or an acoustic mirror 430 is located below the bottom electrode 442; bottom electrode 442 the piezoelectric layer 444 is formed on the; pair of low formed on the piezoelectric layer 444, and a high acoustic impedance layer 450 in the low acoustic impedance layer is formed on the passivation layer 450,460. 低、高声阻抗层对450包括在压电层444上形成的低声阻抗层452和在低声阻抗层452上形成的高声阻抗层454。 Low acoustic impedance layer 450 comprising a low acoustic impedance layer is formed on the piezoelectric layer 444 is formed layer 452 and acoustic impedance on the low acoustic impedance layer 452,454.

[0104] 在此实施例中,由低、高声阻抗层对450中的一层,倾向于由低声阻抗层452充当顶电极,这样低声阻抗层452与底电极442以及压电层444 一起组成谐振结构440。 [0104] In this embodiment, the low acoustic impedance layer 450 in a layer, tends to serve as a top electrode is composed of a low acoustic impedance layer 452, and low acoustic impedance layer 444 and the bottom electrode 452 and a piezoelectric layer 442 440 together form the resonant structure.

[0105] 在此实施例中,低声阻抗层452由金属材料如铝(Al)或铝合金(aluminum alloy) 形成。 [0105] In this embodiment, low acoustic impedance layer 452 is formed of a metal material such as aluminum (Al) or an aluminum alloy (aluminum alloy). 形成高声阻抗层454的材料有钨(tungsten)、钼(molybdenum)、钼(platinum)、 钌(ruthenium)、铱(iridium)、鹤铁(titanium tungsten)、五氧化二组(tantalum pentoxide)、氧化,合(hafnium oxide)、氧化招(aluminum oxide)、娃化络(chromium silicide)、碳化铌(niobium carbide)、氧化谏(rhenium oxide)、碳化组(tantalum carbide) > Mft.Ii (tantalum nitride) > ii^^blt (titanium carbide) > ¢14^.It (titanium oxide)、碳化f凡(vanadium carbide) > M ft. 1¾ (tungsten nitride)、氧化1¾ (tungstenoxide)、碳化锆(zirconium carbide)、碳化硅(SiC)、类金刚石(DLC)或硅掺杂的类金刚石(Si-DLC)。 Material forming the acoustic impedance layer 454 of tungsten (tungsten), Mo (molybdenum), molybdenum (platinum), Ru (ruthenium), Ir (iridium), iron Crane (titanium tungsten), Group pentoxide (tantalum pentoxide), oxide, co (hafnium oxide), strokes oxide (aluminum oxide), baby of the network (chromium silicide), niobium carbide (niobium carbide), Jian oxide (rhenium oxide), group carbide (tantalum carbide)> Mft.Ii (tantalum nitride )> ii ^^ blt (titanium carbide)> ¢ 14 ^ .It (titanium oxide), where f carbide (vanadium carbide)> M ft. 1¾ (tungsten nitride), oxide 1¾ (tungstenoxide), zirconium carbide (zirconium carbide) , silicon carbide (SiC), diamond-like carbon (DLC), or diamond-like carbon doped silicon (Si-DLC). 低声阻抗层452与高声阻抗层454的厚度可以相同或相差很大,它们的厚度范围都在20nm〜IOOOnm之间。 Low acoustic impedance layer 452 and the thickness of the high acoustic impedance layer 454 may be the same or very different, they have a thickness ranging between 20nm~IOOOnm.

[0106] 为了检验图7表格中与编号8和编号9相对应的声波谐振器400的修正灵敏度,第一电极442、压电层444、低声阻抗层452、高声阻抗层妨4和钝化层460均分别由Mo、A1N、 Al、W和S^2形成,但各层厚度不尽相同。 [0106] In order to test the sensitivity correction table in FIG. 7 with number 8 and number 9 corresponds to the acoustic wave resonator 400, a first electrode 442, the piezoelectric layer 444, low acoustic impedance layer 452, high acoustic impedance layer and a blunt harm 4 layer 460 are respectively formed by a ^ 2 Mo, A1N, Al, W and S, but not the same thickness of each layer. 在编号8中,各材料层的厚度分别为0.四μ m、 2μπι、0. 787μπι、0. 636 μ m和0. 3 μ m。 In No. 8, the thickness of each material layer are four 0.5 μ m, 2μπι, 0. 787μπι, 0. 636 μ m and 0. 3 μ m. 然而在编号9中,相应的各层厚度分别为0. 15 μ m、 2. 18 μ m、0. 937 μ m、0. 636 μ m和0. 3 μ m。 However, the number 9, the thicknesses of the respective layers 0. 15 μ m, 2. 18 μ m, 0. 937 μ m, 0. 636 μ m and 0. 3 μ m. 与编号8和编号9对应的谐振器的修正灵敏度均约为1.9kHz/A,这相对于传统声波谐振器(编号1)的50. 6 kHz/A减小了很多。 With the number 8 and number 9 corresponds to the correction of the sensitivity of the resonator was about 1.9kHz / A, which relative to conventional acoustic wave resonator (No. 1) 50. 6 kHz / A reduced a lot. 但编号9的足。 But No. 9 feet. 比编号8的约大8%。 8 large number ratio of about 8%.

[0107] 图5是根据本发明的又一个实施例而得到的声波谐振器500。 [0107] FIG. 5 is a further embodiment of the present invention obtained acoustic wave resonator 500. 与图4所示的声波谐振器400相似,声波谐振器500具有一层低声阻抗层552和一层高声阻抗层554。 400 4 is similar to FIG acoustic wave resonator shown, acoustic wave resonator 500 having a layer of a low acoustic impedance layer 552 and the layer 554 a layer of high acoustic impedance. 高声阻抗层5M在带有空气腔530的基底510上形成。 5M high acoustic impedance layer 510 is formed on the substrate 530 with an air chamber. 低声阻抗层552在高声阻抗层5M上形成。 Low acoustic impedance layer 552 is formed on the high acoustic impedance layer 5M. 压电层544在低声阻抗层552上形成。 The piezoelectric layer 544 is formed on the low acoustic impedance layer 552. 顶电极546在压电层544上形成。 A top electrode 546 formed on the piezoelectric layer 544. 在此实施例中,低声阻抗层552充当底电极,与压电层544和顶电极546 —起构成谐振结构M0。 In this embodiment, low acoustic impedance layer 552 serving as a bottom electrode, the piezoelectric layer 544 and the top electrode 546-- constitute a resonance structure from M0. 使用一对低声阻抗层552和高声阻抗层5M可以提高声波谐振器对外部环境变化和自身老化的抵抗能力,并且可以根据需要改变谐振器的色散特性。 A pair of low acoustic impedance and high acoustic impedance layer 552 layer can increase acoustic wave resonator 5M external environment changes and their aging resistance, and dispersion characteristics of the resonator may be changed as needed.

[0108] 如图5所示,空气腔530也可以位于介质层520中,其中介质层520形成于基底510之上。 As shown in [0108] FIG. 5, the air chamber 530 may be located on the dielectric layer 520, wherein the dielectric layer 520 is formed over the substrate 510. 并且高声阻抗层5M在介质层520之上形成,并位于空气腔530之上。 5M and high acoustic impedance layer 520 is formed over the dielectric layer, and over the air cavity 530.

[0109] 图6是根据本发明的一个实施例而得到的声波谐振器600。 [0109] FIG. 6 is an embodiment of the present invention obtained by the acoustic wave resonator 600. 声波谐振器600具有第一和第二低、高声阻抗层对650A和650B,以及位于第一低、高声阻抗层对650A与第二低、高声阻抗层对650B之间的压电层644。 Acoustic wave resonator 600 having a first and a second low acoustic impedance layer 650A and 650B, and a first low acoustic impedance layer 650A and a second low acoustic impedance between the piezoelectric layers of the 650B 644. 第一低、高声阻抗层对650A包含第一低声阻抗层652和在基底610上形成的位于空气腔630之上的第一高声阻抗层654。 A first low acoustic impedance layer 650A comprises a first layer 652 and a first acoustic impedance acoustic impedance layer 654 located above the air cavity 630 is formed on the substrate 610. 第二低、高声阻抗层对650B包含在压电层644上形成的第二低声阻抗层656和在第二低声阻抗层656 上形成的第二高声阻抗层658。 A second low acoustic impedance layer 650B comprises a piezoelectric layer 644 formed on the second acoustic impedance and the second acoustic impedance layer 656 is formed on the second layer of low acoustic impedance layers 656,658. 在此实施例中,第一和第二低声阻抗层652和656分别充当谐振结构640的底电极和顶电极。 Embodiment, the first and second low acoustic impedance layers 652 and 656 each function as a resonant structure bottom and top electrodes 640 in this embodiment. 它们倾向于由铝(Al)和铝合金(aluminum alloy) 形成。 They tend to be formed of aluminum (Al) and an aluminum alloy (aluminum alloy). 形成第一和第二高声阻抗层6M和658的材料有钨(tungsten)、钼(molybdenum)、 钼(platinum)、钌(ruthenium)、铱(iridium)、鹤铁(titanium tungsten)、五氧化二组(tantalum pentoxide)、氧化給(hafnium oxide)、氧化招(aluminum oxide)、娃化络(chromium silicide)、碳化铌(niobium carbide)、氧化谏(rhenium oxide)、碳化组(tantalum carbide)> M ft.Ii (tantalum nitride)> ^ 4t.lt (titanium carbide)> ¢1 It (titanium oxide)、碳化f凡(vanadium carbide) >MftlI^ (tungsten nitride)、氧化1¾ (tungsten oxide)、碳化锆(zirconium carbide)、碳化硅(SiC)、类金刚石(DLC)或硅掺杂的类金刚石(Si-DLC),但不局限于以上材料。 Forming first and second acoustic impedance material layer 658 and 6M tungsten (tungsten), Mo (molybdenum), molybdenum (platinum), Ru (ruthenium), Ir (iridium), iron Crane (titanium tungsten), pentoxide two groups (tantalum pentoxide), oxidized to (hafnium oxide), oxide strokes (aluminum oxide), baby of the envelope (chromium silicide), niobium carbide (niobium carbide), oxide Jian (rhenium oxide), carbide group (tantalum carbide)> M ft.Ii (tantalum nitride)> ^ 4t.lt (titanium carbide)> ¢ 1 It (titanium oxide), where f carbide (vanadium carbide)> MftlI ^ (tungsten nitride), oxide 1¾ (tungsten oxide), zirconium carbide (zirconium carbide), silicon carbide (SiC), diamond-like carbon (DLC), or diamond-like carbon doped silicon (Si-DLC), but is not limited to the above materials.

[0110] 此外,钝化层660在第二高声阻抗层658之上形成。 [0110] In addition, a passivation layer 660 formed over the second layer of high acoustic impedance 658.

[0111] 本发明另一方面还包括在基底上加工的声波谐振器。 Hand [0111] The present invention further comprises a substrate processing acoustic resonators. 此声波谐振器包括:种子层; 谐振结构,其具有在种子层上形成的第一电极、在第一电极上形成的压电层和在压电层上形成的第二电极;以及与谐振结构相关联的复合层结构,从而可以提高声波谐振器对环境变化和自身老化的抵抗能力,也会大幅度地降低修正灵敏度,或是优化声波谐振器的色散特性。 This acoustic wave resonator comprising: a seed layer; resonant structure, having a first electrode formed on the seed layer, a piezoelectric layer and a second electrode formed on the piezoelectric layer formed on the first electrode; and a resonant structure associated multilayer structure, which can improve the dispersion characteristics of the acoustic wave resonator resistance to environmental changes and aging itself, will significantly reduce the sensitivity correction, or to optimize acoustic wave resonator.

[0112] 在一个实施例中,复合层结构包括一系列具有高声阻抗的第一材料层和具有低声阻抗的第二材料层,其中高声阻抗层与低声阻抗层交替叠放。 [0112] In one embodiment, the composite layer structure comprising a series of a first material layer and the second layer having a low acoustic impedance material having a high acoustic impedance, where acoustic impedance layer and a low acoustic impedance layers are alternately stacked. 在一个实施例中,复合层结构的各层厚度都为谐振器的谐振频率下各材料层中声波四分之一波长的奇数倍。 An odd multiple layers of material in acoustic quarter wavelength at a resonant frequency in one embodiment, the thickness of each layer of the composite structure are resonators.

[0113] 在一个实施例中,复合层结构包括与种子层相邻的具有低声阻抗的第一材料层, 和在第一材料层上形成的具有高声阻抗的第二材料层,这样第一材料层就位于种子层与第二材料层之间。 [0113] In one embodiment, the composite layer structure comprises a seed layer adjacent to the first layer of material having a low acoustic impedance, and a second layer of material having a high acoustic impedance is formed on the first material layer, such that the first a layer of material located between the seed layer and the second material layer. 在另一实施例中,复合层结构进一步包括在谐振结构的第二电极上形成的具有低声阻抗的第三材料层,和在第三材料层上形成的具有高声阻抗的第四材料层。 In another embodiment, the composite structure further comprises a third layer of material having a low acoustic impedance layer formed on the second electrode of the resonant structure, and a fourth material having a high acoustic impedance layer formed on the third material layer .

[0114] 在另一实施例中,复合层结构包括在谐振结构的第二电极上形成的具有低声阻抗的第一材料层,和在第一材料层上形成的具有高声阻抗的第二材料层。 [0114] In another embodiment, the first material having a low acoustic impedance layer structure comprising a composite layer formed on the second electrode of the resonant structure, and is formed on the first material layer having a second acoustic impedance material layer.

[0115] 总之,本发明描述了应用复合层结构的声波谐振器,其中复合层结构由一系列高声阻抗材料层和低声阻抗材料层交替叠放而形成,从而提高声波谐振器对环境变化和自身老化的抵抗能力,并大幅降低了修正灵敏度,或/和优化声波谐振器的色散特性。 [0115] In summary, the present invention describes a composite layer applied acoustic wave resonator structure, wherein the composite layer structure consisting of a series of high acoustic impedance material and a layer of low acoustic impedance material layers are alternately stacked is formed, thereby improving the environmental change acoustic wave resonator and their aging resistance, and significantly reduces the sensitivity correction, or / and optimizing dispersion characteristics acoustic wave resonator.

[0116] 上述对本发明中几种典型体声波谐振器的描述仅仅是为了说明,这些说明不是很详尽,不会限制发明的确切形式。 [0116] The description of the invention in several typical bulk acoustic wave resonator is only for explanation, these descriptions are not exhaustive, not to limit the invention to the precise form. 鉴于本发明,可以做出许多修改和变化。 In view of the present invention, many modifications and variations may be made.

Claims (31)

1.一种声波谐振器,其特征在于,包括:(a)带有空气腔的基底;(b)在基底上形成并位于空气腔之上的第一低、高声阻抗层对;(c)在第一低、高声阻抗层对上形成的种子层;(d)在种子层上形成的第一电极;(e)在第一电极上形成的压电层;(f)在压电层上形成的第二电极;(g)在第二电极上形成的第二低、高声阻抗层对;(h)在第二低、高声阻抗层对上形成的钝化层。 An acoustic resonator comprising: (a) a base having an air chamber; (b) a first formed and positioned above the lower air chamber on the substrate, high acoustic impedance layer; (c ) seed layer is formed on the first low acoustic impedance layer; (d) a first electrode formed on the seed layer; (e) a piezoelectric layer formed on the first electrode; (f) in the piezoelectric a second electrode formed on the layer; (G) of the second lower electrode formed on the second, high acoustic impedance layer; (H) at a second lower passivation layer formed on the high acoustic impedance layer pair.
2.根据权利要求1所述的声波谐振器,其特征在于,所述的第一低、高声阻抗层对包括位于空气腔之上的第一高声阻抗层,和位于第一高声阻抗层与种子层之间的第一低声阻抗层;所述的第二低、高声阻抗层对包括在第二电极上形成的第二低声阻抗层,和在第二低声阻抗层与钝化层之间形成的第二高声阻抗层。 The acoustic wave resonator according to claim 1, wherein said first low acoustic impedance layer located above the air cavity comprises a first layer of high acoustic impedance, and a first pair of acoustic impedance a first acoustic impedance between the layer and the seed layer; said second low acoustic impedance layer comprises a second low acoustic impedance layer is formed on the second electrode, and a second layer with low acoustic impedance a second acoustic impedance layer is formed between the passivation layers.
3.根据权利要求1所述的声波谐振器,其特征在于,所述的第一和第二低声阻抗层均由声阻抗低于20Mrayl的第一材料组成;所述的第一和第二高声阻抗层均由声阻抗高于40Mrayl的第二材料组成。 The acoustic wave resonator according to claim 1, wherein said first and second acoustic impedance less than the acoustic impedance of the first layer by the material composition of 20Mrayl; said first and second by a second layer of high acoustic impedance material of higher acoustic impedance than 40Mrayl composition.
4.根据权利要求3所述的声波谐振器,其特征在于,所述的第一材料包括氧化硅、铝、 碳掺杂氧化硅、纳米多孔甲基倍半硅氧烷、纳米多孔氢倍半硅氧烷、包含MSQ和HSQ的纳米多孔混合物、纳米玻璃、气凝胶、干凝胶、旋涂玻璃、聚对二甲苯、SiLK或苯并环丁烯;所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化硅、类金刚石或硅掺杂的类金刚石。 The acoustic wave resonator according to claim 3, wherein said first material comprises silicon oxide, aluminum, carbon doped silicon oxide, nano-porous methyl silsesquioxane, hydrogen silsesquioxane nanoporous silicone, nanoporous mixture comprising the HSQ and MSQ, nano glass, airgel, xerogel, spin-on glass, parylene, benzocyclobutene, or SiLK; said second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, tantalum pentoxide, hafnium oxide, aluminum oxide, chromium silicide, carbide, niobium oxide, rhenium, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride , tungsten oxide, zirconium carbide, silicon carbide, diamond or diamond-like carbon doped silicon.
5.根据权利要求2所述的声波谐振器,其特征在于,所述的第一低声阻抗层和第二低声阻抗层、第一高声阻抗层和第二高声阻抗层的厚度范围均为20nm〜lOOOnm。 5. The acoustic resonator according to claim 2, wherein said first layer and the second acoustic impedance low acoustic impedance layer thickness of the first layer and the second acoustic impedance of the high acoustic impedance layers are 20nm~lOOOnm.
6.根据权利要求1所述的声波谐振器,其特征在于,形成所述的钝化层的材料包括碳化硅、氧化铝、金刚石、类金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 The acoustic wave resonator according to claim 1, wherein a material forming the passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer, or combinations thereof.
7.根据权利要求1所述的声波谐振器,其特征在于,形成所述的种子层的材料包括氮化铝、氮氧化铝、氮化钨、氮化钛钨、氧化硅、氮化硅或碳化硅,或是它们的组合。 The acoustic wave resonator according to claim 1, wherein a material forming the seed layer comprises aluminum nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silicon oxide, silicon nitride, or silicon carbide, or a combination thereof.
8.一种声波谐振器,其特征在于,包括:(a)基底;(b)由基底支撑的第一电极;(c)在第一电极上形成的压电层;(d)在压电层上形成的第二电极;(e)与第一或第二电极相连的一对低、高声阻抗层对;(f)若低、高声阻抗层对与第一电极相连,则钝化层形成于第二电极之上,若低、高声阻抗层对与第二电极相连,则钝化层形成于低、高声阻抗层对之上。 An acoustic resonator comprising: (a) a substrate; (b) a first electrode supported by a substrate; (c) piezoelectric layer formed on the first electrode; (d) the piezoelectric a second electrode formed on the layer; (e) the first or second electrode connected to a pair of low, high acoustic impedance layer; (f) when the low acoustic impedance layer connected to the first electrode, the passivation layer formed on the second electrode, if the low acoustic impedance layer connected to the second electrode, the passivation layer is formed on the low acoustic impedance layer on the right.
9.根据权利要求8所述的声波谐振器,其特征在于,所述的基底带有空气腔,低、高声阻抗层对在基底上形成,其位于空气腔之上,并与第一电极相连。 9. The acoustic resonator according to claim 8, wherein said substrate with an air chamber, low acoustic impedance layer formed on the substrate, which is located above the air chamber, and the first electrode connected.
10.根据权利要求8所述的声波谐振器,其特征在于,所述的基底带有空气腔或声学镜,第一电极在基底上形成并位于空气腔或声学镜之上,低、高声阻抗层对与第二电极相连。 10. The acoustic wave resonator according to claim 8, wherein said substrate with an air chamber or an acoustic mirror, forming a first electrode and over the air cavity or acoustic mirror on a substrate, low, loud impedance connected to the second electrode layer.
11.根据权利要求8所述的声波谐振器,其特征在于,所述的低、高声阻抗层对包括一层低声阻抗层和一层高声阻抗层。 11. The acoustic wave resonator according to claim 8, wherein said lower layer comprises a layer of high acoustic impedance layer and a low acoustic impedance of the high acoustic impedance layers.
12.根据权利要求11所述的声波谐振器,其特征在于,所述的低声阻抗层位于压电层与高声阻抗层之间。 12. The acoustic wave resonator according to claim 11, wherein said layer of low acoustic impedance layer positioned between the piezoelectric layer and the acoustic impedance.
13.根据权利要求11所述的声波谐振器,其特征在于,所述的低声阻抗层由声阻抗低于20Mrayl的第一材料所形成;所述的高声阻抗层由声阻抗高于40Mrayl的第二材料形成。 13. The acoustic wave resonator according to claim 11, wherein said acoustic impedance is formed of the first material layer is lower than the acoustic impedance 20Mrayl; said layer of high acoustic impedance than the acoustic impedance 40Mrayl forming a second material.
14.根据权利要求13所述的声波谐振器,其特征在于,所述的第一材料包括氧化硅、 铝、碳掺杂氧化硅、纳米多孔甲基倍半硅氧烷、纳米多孔氢倍半硅氧烷、包含MSQ和HSQ的纳米多孔混合物、纳米玻璃、气凝胶、干凝胶、旋涂玻璃、聚对二甲苯、SiLK或苯并环丁烯;所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化硅、类金刚石或硅掺杂的类金刚石。 14. The acoustic wave resonator according to claim 13, wherein said first material comprises silicon oxide, aluminum, carbon doped silicon oxide, nano-porous methyl silsesquioxane, hydrogen silsesquioxane nanoporous silicone, nanoporous mixture comprising the HSQ and MSQ, nano glass, airgel, xerogel, spin-on glass, parylene, benzocyclobutene, or SiLK; said second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, tantalum pentoxide, hafnium oxide, aluminum oxide, chromium silicide, carbide, niobium oxide, rhenium, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride , tungsten oxide, zirconium carbide, silicon carbide, diamond or diamond-like carbon doped silicon.
15.根据权利要求11所述的声波谐振器,其特征在于,所述的低声阻抗层与高声阻抗层的厚度范围均为20nm〜lOOOnm。 15. The acoustic wave resonator as claimed in claim 11, wherein said low acoustic impedance layer and a thickness ranging from high acoustic impedance layer are 20nm~lOOOnm.
16.根据权利要求8所述的声波谐振器,其特征在于,所述的钝化层的形成材料包括碳化硅、氧化铝、金刚石、类碳金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 16. The acoustic wave resonator according to claim 8, wherein said forming material of the passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer , or a combination thereof.
17. 一种声波谐振器,其特征在于,包括:(a)基底;(b)由基底支撑的第一电极;(c)在第一电极上形成的压电层;(d)在压电层上形成的第二电极;(e)在第二电极上形成的钝化层,所述的第一电极和第二电极中至少有一个包含一对低、高声阻抗层对。 17. An acoustic wave resonator, characterized by comprising: (a) a substrate; (b) a first electrode supported by a substrate; (c) piezoelectric layer formed on the first electrode; (d) the piezoelectric a second electrode formed on the layer; a passivation layer (e) is formed on the second electrode, the first electrode and the second electrode comprises at least a pair of low, high acoustic impedance layer pair.
18.根据权利要求17所述的声波谐振器,其特征在于,所述的基底带有空气腔,第一电极包括在基底上形成并位于空气腔之上的一对低、高声阻抗层对。 18. The acoustic wave resonator according to claim 17, characterized in that said air chamber with a substrate, a first electrode formed on the substrate and comprising one pair positioned above the lower air chamber, high acoustic impedance layer .
19.根据权利要求17所述的声波谐振器,其特征在于,所述的基底带有空气腔或声学镜,第一电极包括一层金属电极,该金属电极在基底上形成并位于空气腔或声学镜之上。 19. The acoustic wave resonator according to claim 17, wherein said substrate with an air chamber or an acoustic mirror, the first electrode comprises a layer of a metal electrode, the metal electrode and an air chamber is formed on a substrate or The acoustic mirror above.
20.根据权利要求17所述的声波谐振器,其特征在于,所述的低、高声阻抗层对包括一层低声阻抗层和一层高声阻抗层。 20. The acoustic wave resonator according to claim 17, wherein said lower layer comprises a layer of high acoustic impedance layer and a low acoustic impedance of the high acoustic impedance layers.
21.根据权利要求20所述的声波谐振器,其特征在于,所述的低声阻抗层位于压电层与高声阻抗层之间。 21. The acoustic wave resonator according to claim 20, wherein said layer of low acoustic impedance layer positioned between the piezoelectric layer and the acoustic impedance.
22.根据权利要求20所述的声波谐振器,其特征在于,所述的低声阻抗层由声阻抗低于20Mrayl的第一材料所形成;所述的高声阻抗层由声阻抗高于40Mrayl的第二材料形成。 22. The acoustic wave resonator according to claim 20, wherein said acoustic impedance is formed of the first material layer is lower than the acoustic impedance 20Mrayl; said layer of high acoustic impedance than the acoustic impedance 40Mrayl forming a second material.
23.根据权利要求22所述的声波谐振器,其特征在于,所述的第一材料包括铝或铝合金;所述的第二材料包括钨、钼、钼、钌、铱、钨钛、五氧化二钽、氧化铪、氧化铝、硅化铬、碳化铌、氧化铼、碳化钽、氮化钽、碳化钛、氧化钛、碳化钒、氮化钨、氧化钨、碳化锆、碳化硅、类金刚石或硅掺杂的类金刚石。 23. The acoustic wave resonator according to claim 22, wherein said first material comprises aluminum or an aluminum alloy; said second material comprises tungsten, molybdenum, molybdenum, ruthenium, iridium, tungsten, titanium, five tantalum oxide, hafnium oxide, aluminum oxide, chromium silicide, carbide, niobium oxide, rhenium, tantalum carbide, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, silicon carbide, diamond diamond or doped silicon.
24.根据权利要求20所述的声波谐振器,其特征在于,所述的低声阻抗层与高声阻抗层的厚度范围均为20nm〜lOOOnm。 24. The acoustic wave resonator according to claim 20, wherein said low acoustic impedance layer and a thickness ranging from high acoustic impedance layer are 20nm~lOOOnm.
25.根据权利要求17所述的声波谐振器,其特征在于,所述的钝化层的形成材料包括碳化硅、氧化铝、金刚石、类碳金刚石、氧化硅、氮化硅或疏水性聚合物,或是它们的组合。 25. The acoustic wave resonator according to claim 17, wherein said forming material of the passivation layer comprises silicon carbide, alumina, diamond, diamond-like carbon, silicon oxide, silicon nitride, or a hydrophobic polymer , or a combination thereof.
26. —种在基底上加工的声波谐振器,其特征在于,包括:(a)种子层;(b)谐振结构,所述的谐振结构包含在种子层上形成的第一电极、在第一电极上形成的压电层以及在压电层上形成的第二电极;(c)与谐振结构相关联的复合层,其可以提高声波谐振器对环境变化和自身老化的抵抗能力,大幅降低修正灵敏度,或是优化声波谐振器的色散特性。 26. - species on the substrate processing acoustic resonators, wherein, comprising: (a) a seed layer; (b) a resonant structure, the resonant structure comprises a first electrode formed on the seed layer, a first piezoelectric layer and a second electrode formed on the piezoelectric layer formed on the electrode; (c) the composite layer associated with the resonant structure, which can increase acoustic wave resonator to environmental changes and their aging resistance, greatly reduced correction sensitivity, or to optimize the dispersion characteristics of the acoustic wave resonator.
27.根据权利要求沈所述的在基底上加工的声波谐振器,其特征在于,所述的复合层结构包括一系列具有高声阻抗的第一材料层和具有低声阻抗的第二材料层,其中高声阻抗材料层与低声阻抗材料层交替叠放。 The sink according to claim 27 on a substrate processing acoustic wave resonator, wherein said layer structure comprises a series of first composite material layer and the second layer having a low acoustic impedance material having a high acoustic impedance wherein the material of high acoustic impedance layer and a low acoustic impedance material layers are alternately stacked.
28.根据权利要求沈所述的在基底上加工的声波谐振器,其特征在于,所述的复合层结构中的各层厚度都为谐振器的谐振频率下各材料层中声波四分之一波长的奇数倍。 The sink according to claim 28 on a substrate processing acoustic wave resonator, wherein a thickness of each composite layer structure are the sound waves in the material of each layer of the quarter at the resonance frequency of the resonator odd multiple of the wavelength.
29.根据权利要求沈所述的在基底上加工的声波谐振器,其特征在于,所述的复合层结构包括与种子层相邻的具有低声阻抗的第一材料层,和在第一材料层上形成的具有高声阻抗的第二材料层,这样第一材料层就位于种子层与第二材料层之间。 The sink according to claim 29 on a substrate processing acoustic wave resonator, wherein said composite layer structure comprises a first layer of material having a low acoustic impedance with the seed layer adjacent the first material and the second layer of material having a high acoustic impedance layer formed on, such that the first material layer is located between the seed layer and the second material layer.
30.根据权利要求四所述的在基底上加工的声波谐振器,其特征在于,所述的复合层结构进一步包括在谐振结构的第二电极上形成的具有低声阻抗的第三材料层,和在第三材料层上形成的具有高声阻抗的第四材料层。 30. A substrate according to claim processed on the four acoustic wave resonator, wherein said composite structure further comprises a third layer of material having a low acoustic impedance layer formed on the second electrode of the resonant structure, and a fourth material layer formed on the third material layer having a high acoustic impedance.
31.根据权利要求沈所述的在基底上加工的声波谐振器,其特征在于,所述的复合层结构包括在谐振结构的第二电极上形成的具有低声阻抗的第一材料层,和在第一材料层上形成的具有高声阻抗的第二材料层。 31. The sink according to claim on a substrate processed acoustic wave resonator, wherein said composite structure comprises a layer of a first material having a low acoustic impedance layer formed on the second electrode of the resonant structure, and the second material layer formed on the first layer of material having a high acoustic impedance.
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