CN102291095A - complex acoustic wave resonator - Google Patents
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- CN102291095A CN102291095A CN2011101077030A CN201110107703A CN102291095A CN 102291095 A CN102291095 A CN 102291095A CN 2011101077030 A CN2011101077030 A CN 2011101077030A CN 201110107703 A CN201110107703 A CN 201110107703A CN 102291095 A CN102291095 A CN 102291095A
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Abstract
The invention discloses an acoustic wave resonator, which comprises a base with an air cavity, a first low-acoustic impedance layer and high-acoustic impedance layer pair, a seed layer, a first electrode, a piezoelectric layer, a second electrode, a second low-acoustic impedance layer and high-acoustic impedance layer pair and a passivation layer, wherein the first low-acoustic impedance layer and high-acoustic impedance layer pair is formed on the base and is positioned above the air cavity; the seed layer is formed on the first low-acoustic impedance layer and high-acoustic impedance layer pair; the first electrode is formed on the seed layer; the piezoelectric layer is formed on the first electrode; the second electrode is formed on the piezoelectric layer; the second low-acoustic impedance layer and high-acoustic impedance layer pair is formed on the second electrode; the passivation layer is formed on the second low-acoustic impedance layer and high-acoustic impedance layer pair; the first low-acoustic impedance layer and high-acoustic impedance layer pair comprises a first high-acoustic impedance layer which is positioned above the air cavity and a first low-acoustic impedance layer which is positioned between the first high-acoustic impedance layer and the seed layer; and the second low-acoustic impedance layer and high-acoustic impedance layer pair comprises a second low-acoustic impedance layer which is formed on the second electrode and a second high-acoustic impedance layer which is formed between the second low-acoustic impedance layer and the passivation layer. In the invention, the resistance capacity of the acoustic wave resonator against environmental change and aging of the resonator can be improved, the frequency correction sensitivity can be reduced, and/or the dispersion characteristic of the acoustic wave resonator can be optimized.
Description
Technical field
The present invention relates to a kind of acoustic resonator and filter.Particularly relate to a kind of complex acoustic resonator of using lamination layer structure.
Background technology
Piezoelectric sound wave (BAW) resonator is widely used in high-performance radio-frequency (RF) filter and duplexer in the radio hand-held equipment.Than traditional RF ceramic filter and surface acoustic wave (SAW) filter, the BAW filter has unique advantage: size is little, frequency is little with the drift of temperature, power capacity is big, operating frequency is high or the like.(IC) combines with integrated circuit, and the BAW resonator has been used to constitute the voltage controlled oscillator in low phase noise oscillator and the FREQUENCY CONTROL application.Usually utilize the IC process technology to process the BAW resonator on Silicon Wafer, this processing method has characteristics such as package dimension is little, homogeneity good, cost is low.
As shown in figure 11, traditional BAW resonator 10 comprises piezoelectric layer 14, and as aluminium nitride (aluminum nitride), thereby it is by double layer of metal electrode 14a and the folded formation of 14b sandwich structure.When apply a RF signal of telecommunication between two electrode 14a and 14b, the expansion and the contraction of machinery can take place owing to piezoelectric effect in resonant cavity, thereby motivate sound wave in structure 10.The direction of propagation of sound wave is parallel with the direction of an electric field that is applied, and it reflects on the interface of electrode 14a and 14b and air, thereby forms resonance.
Thin film bulk acoustic resonator (FBAR) is an embodiment of BAW resonator.Hearth electrode and top electrode that resonator comprises one deck piezoelectric layer and is clipped in the piezoelectric layer both sides.Two interelectrode overlapping regions are the effective coverage, and acoustic wave energy is limited in the effective coverage.The both sides of FBAR all have a common boundary with air or vacuum, for example in substrate 11 or its inner air chamber 13 that forms with the restriction sound wave.In the realization of reality, the effective coverage of structure is suspended from the substrate.The air of bottom has a common boundary and can realize by using sacrificial layer material (it can be removed afterwards) or etching away the part substrate.Usually the material of substrate is a silicon, also can use other base material.
Also have a kind of BAW resonator of form to be called as solid embedding formula resonator (SMR).In the SMR structure, hearth electrode is positioned on the acoustic mirror, and this acoustic mirror is made up of the reflector of the high and low acoustic impedance material of multilayer, as low-density silica (siliconoxide) and highdensity tungsten (tungsten).The air that acoustic mirror has replaced being positioned in the FBAR structure under the hearth electrode has a common boundary, and stops acoustic wave energy to be leaked in the substrate thereby formed to isolate between resonator and silicon substrate, causes the acoustics loss.
The resonance frequency of BAW resonator is mainly determined by the thickness of each material layer in acoustic wave propagation path.Because the film thickness of deposition is not fully uniformly, the resonance frequency of device can be different in whole wafer scope.In order to reduce the difference of resonance frequency, be necessary to carry out frequency correction operation, it can adjust to several megahertzes from tens megahertzes with the difference between resonance frequency, thereby reaches yield preferably.In the BAW resonator, we are defined as correction sensitivity with the resonance frequency of BAW resonator with the variation of top layer thickness, and the unit of revising sensitivity is
For example,
The every variation of expression top layer thickness
, the resonance frequency of resonator will change 10kHz.Revise sensitivity and be directly proportional with resonance frequency, the correction sensitivity of the resonator of 2GHz exists usually
Within the scope.When the frequency of BAW resonator rose to 5GHz, the film thickness of resonator can diminish, revise sensitivity can up to
Adjustment has the wafer of so high correction sensitivity, and it is very difficult making its frequency difference reach very for a short time.
Therefore, above-mentioned many defectives and deficiency need be well solved.
Summary of the invention
Technical problem to be solved by this invention is that a kind of complex acoustic resonator that can improve acoustic resonator to environmental change and self aging resistivity is provided.
The technical solution adopted in the present invention is: a kind of acoustic resonator comprises:
(a) have the substrate of air chamber;
(b) form in the substrate and be positioned on the air chamber first low, the acoustic impedance layer is right;
(c) first low, acoustic impedance layer on the Seed Layer that forms;
(d) first electrode that on Seed Layer, forms;
(e) piezoelectric layer that on first electrode, forms;
(f) second electrode that on piezoelectric layer, forms;
(g) on second electrode, form second low, the acoustic impedance layer is right;
(h) second low, acoustic impedance layer on the passivation layer that forms.
Described first low, acoustic impedance layer is to comprising the first acoustic impedance layer that is positioned on the air chamber, and the first low acoustic impedance layer between the first acoustic impedance layer and Seed Layer;
Described second low, acoustic impedance layer is to being included in the second low acoustic impedance layer that forms on second electrode, and the second acoustic impedance layer that forms between the second low acoustic impedance layer and passivation layer.
The described first and second low acoustic impedance layers are formed by first material that acoustic impedance is lower than 20Mrayl; The described first and second acoustic impedance layers are formed by second material that acoustic impedance is higher than 40Mrayl.
Described first material comprises silica, aluminium, carbon doped silicon oxide, nanoporous methyl silsesquioxane, nanoporous hydrogen silsesquioxane, comprises nanoporous mixture, nano-glass, aeroge, xerogel, spin-coating glass, Parylene, SiLK or the benzocyclobutene of MSQ and HSQ;
Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
The thickness range of the described first low acoustic impedance layer and the second low acoustic impedance layer, the first acoustic impedance layer and the second acoustic impedance layer is 20nm～1000nm.
The material that forms described passivation layer comprises carborundum, aluminium oxide, diamond, diamond like carbon, silica, silicon nitride or hydrophobic polymer, or their combination.
The material that forms described Seed Layer comprises aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride or carborundum, or their combination.
A kind of acoustic resonator comprises:
(a) substrate;
(b) by first electrode of substrate support;
(c) piezoelectric layer that on first electrode, forms;
(d) second electrode that on piezoelectric layer, forms;
(e) link to each other with first or second electrode a pair of low, the acoustic impedance layer is right;
(f) if low, acoustic impedance layer is to linking to each other with first electrode, then passivation layer is formed on second electrode, as if low, acoustic impedance layer to linking to each other with second electrode, then passivation layer be formed at low, acoustic impedance layer on.
Described base strap has air chamber, and low, acoustic impedance layer is to forming in substrate, and it is positioned on the air chamber, and links to each other with first electrode.
Described base strap has air chamber or acoustic mirror, and first electrode is forming in the substrate and is being positioned on air chamber or the acoustic mirror, and low, acoustic impedance layer is to linking to each other with second electrode.
Described low, acoustic impedance layer is to comprising one deck low acoustic impedance layer and one deck acoustic impedance layer.
Described low acoustic impedance layer is between piezoelectric layer and acoustic impedance layer.
Described low acoustic impedance layer is formed by first material that acoustic impedance is lower than 20Mrayl; Described acoustic impedance layer is formed by second material that acoustic impedance is higher than 40Mrayl.
Described first material comprises silica, aluminium, carbon doped silicon oxide, nanoporous methyl silsesquioxane, nanoporous hydrogen silsesquioxane, comprises nanoporous mixture, nano-glass, aeroge, xerogel, spin-coating glass, Parylene, SiLK or the benzocyclobutene of MSQ and HSQ;
Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
The thickness range of described low acoustic impedance layer and acoustic impedance layer is 20nm～1000nm.
The formation material of described passivation layer comprises carborundum, aluminium oxide, diamond, class carbon diamond, silica, silicon nitride or hydrophobic polymer, or their combination.
A kind of acoustic resonator comprises:
(a) substrate;
(b) by first electrode of substrate support;
(c) piezoelectric layer that on first electrode, forms;
(d) second electrode that on piezoelectric layer, forms;
(e) passivation layer that on second electrode, forms,
Have at least in described first electrode and second electrode one comprise a pair of low, the acoustic impedance layer is right.
Described base strap has air chamber, first electrode be included in the substrate form and be positioned on the air chamber a pair of low, the acoustic impedance layer is right.
Described base strap has air chamber or acoustic mirror, and first electrode comprises the layer of metal electrode, and this metal electrode is forming in the substrate and is being positioned on air chamber or the acoustic mirror.
Described low, acoustic impedance layer is to comprising one deck low acoustic impedance layer and one deck acoustic impedance layer.
Described low acoustic impedance layer is between piezoelectric layer and acoustic impedance layer.
Described low acoustic impedance layer is formed by first material that acoustic impedance is lower than 20Mrayl; Described acoustic impedance layer is formed by second material that acoustic impedance is higher than 40Mrayl.
Described first material comprises aluminum or aluminum alloy; Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
The thickness range of described low acoustic impedance layer and acoustic impedance layer is 20nm～1000nm.
The formation material of described passivation layer comprises carborundum, aluminium oxide, diamond, class carbon diamond, silica, silicon nitride or hydrophobic polymer, or their combination.
A kind of acoustic resonator of processing in substrate comprises:
(a) Seed Layer;
(b) resonance structure, described resonance structure are included in first electrode that forms on the Seed Layer, the piezoelectric layer that forms and form on piezoelectric layer on first electrode second electrode;
(c) composite bed that is associated with resonance structure, it can improve acoustic resonator to environmental change and self aging resistivity, significantly reduces and revises sensitivity, or optimize the dispersion characteristics of acoustic resonator.
Described lamination layer structure comprises a series of have first material layer of acoustic impedance and second material layers with low acoustic impedance, and wherein high acoustic impedance materials layer and layer of low acoustic impedance material are stacked alternately.
Each layer thickness in the described lamination layer structure all is the quarter-wave odd-multiple of sound wave in each material layer under the resonance frequency of resonator.
Described lamination layer structure comprises first material layer with low acoustic impedance adjacent with Seed Layer and second material layer with acoustic impedance that forms on first material layer, such first material layer is located between the Seed Layer and second material layer.
Described lamination layer structure further is included in the 3rd material layer with low acoustic impedance that forms on second electrode of resonance structure and the 4th material layer with acoustic impedance that forms on the 3rd material layer.
Described lamination layer structure is included in first material layer with low acoustic impedance that forms on second electrode of resonance structure and second material layer with acoustic impedance that forms on first material layer.
Complex acoustic resonator of the present invention, relate to bulk acoustic wave (BAW) resonator and the filter of using lamination layer structure, wherein lamination layer structure is stacked alternately and is formed by a series of high acoustic impedance materials layers and layer of low acoustic impedance material, can improve acoustic resonator like this to environmental change and self aging resistivity, reduce frequency correction sensitivity, and/or optimize the dispersion characteristics of acoustic resonator.
Description of drawings
Fig. 1 is the sectional view of the acoustic resonator that obtains according to one embodiment of present invention;
Fig. 2 is the sectional view of the acoustic resonator that obtains according to another embodiment of the invention;
Fig. 3 is the sectional view of the acoustic resonator that obtains according to still another embodiment of the invention;
Fig. 4 is the sectional view of the acoustic resonator that obtains according to still a further embodiment;
Fig. 5 is the sectional view of the acoustic resonator that obtains according to another embodiment of the invention;
Fig. 6 is the sectional view of the acoustic resonator that obtains according to still another embodiment of the invention;
Fig. 7 is the correction sensitivity and the electromechanical coupling factor of summarizing the 2GHz resonator of different structure among the present invention or different embodiment by forms mode;
Fig. 8 (a) is the emulation dispersion curve that is numbered 2 acoustic resonator among Fig. 7;
Fig. 8 (b) is numbered the simulation result that the inner relative displacement of 2 acoustic resonator distributes among Fig. 7;
Fig. 9 is the emulation dispersion curve that is numbered 3 acoustic resonator among Fig. 7;
Figure 10 is numbered the simulation result that the inside relative displacement of 6 acoustic resonator distributes among Fig. 7;
Figure 11 is the sectional view of traditional acoustic resonator;
Figure 12 (a) is the emulation dispersion curve that is numbered traditional acoustic resonator of 1 among Fig. 7;
Figure 12 (b) is numbered the simulation result that 1 the inner relative displacement of traditional acoustic resonator distributes among Fig. 7.
Embodiment
Below in conjunction with embodiment and accompanying drawing complex acoustic resonator of the present invention is made a detailed description.
The present invention will be described with the formation of embodiment below with reference to accompanying drawing 1-10.According to purpose of the present invention, one aspect of the present invention relates to the bulk acoustic wave resonator of using lamination layer structure, lamination layer structure is wherein formed by a series of high acoustic impedance materials are alternate with low acoustic impedance material, thereby can improve acoustic resonator to environmental change and self aging resistivity, reduce to revise sensitivity, and/or optimize the dispersion characteristics of acoustic resonator.
Although the following description of the present invention all is based on the exemplary embodiments of FBAR, the present invention can be applied among FBAR and the SMR simultaneously.According to the present invention, compound FBAR comprise a FBAR and at least one pair of in FBAR low, the acoustic impedance layer is right.Shown in the form of Fig. 7, have a pair of compound FBAR (as resonator numbering 2-9) low, that the acoustic impedance layer is right and have very little correction sensitivity, help the correction of frequency like this, and be beneficial to and process the high frequency filter with higher yield, it can reduce cost with respect to traditional FBAR structure (as resonator numbering 1) simultaneously.
Fig. 1 is the acoustic resonator 100 that obtains according to one embodiment of present invention.In this exemplary embodiments, acoustic resonator 100 comprises substrate 110; Resonance structure 140, piezoelectric layer 144 that it comprises first electrode 142, form on first electrode 142 and second electrode 146 that on piezoelectric layer 144, forms; And lamination layer structure 150, it is included in low acoustic impedance layer 152 that forms on second electrode 146 of resonance structure 140 and the acoustic impedance layer 154 that forms on low acoustic impedance layer 152.In other words, low acoustic impedance layer 152 is between piezoelectric layer 144 and acoustic impedance layer 154.Passivation layer 160 forms on the acoustic impedance layer 154 of lamination layer structure 150, and the material that forms passivation layer has carborundum (SiC), aluminium oxide (Al
2O
3), diamond like carbon (DLC), silica (SiO
2), silicon nitride (SiN) or hydrophobic polymer (hydrophobic polymer), or materials similar.
In one embodiment, have air chamber or acoustic mirror 130 on the inside or the top of substrate 110, first electrode 142 of resonance structure 140 is forming in the substrate 110 and is being positioned on air chamber or the acoustic mirror 130.Perhaps, air chamber or acoustic mirror 130 are positioned within the dielectric layer 120, and wherein dielectric layer 120 is formed on the substrate 110.Simultaneously, first electrode 142 of resonance structure 140 forms on dielectric layer 120, and it is positioned on air chamber or the acoustic mirror 130, as shown in Figure 1.
Low acoustic impedance layer 152 is made up of first material that acoustic impedance is lower than 20Mrayl, and acoustic impedance layer 154 is made up of second material that acoustic impedance is higher than 40Mrayl.For example first material comprises silica (SiO
2), aluminium (Al), carbon doped silicon oxide (CDO), nanoporous methyl silsesquioxane (MSQ), nanoporous hydrogen silsesquioxane (HSQ), comprise nanoporous mixture (nano-porous mixtures of MSQ and HSQ), nano-glass (nanoglass), aeroge (aerogel), xerogel (xerogel), spin-coating glass (spin-on-glasses), Parylene (parylene), SiLK or the benzocyclobutene (BCB) of MSQ and HSQ, but be not limited to above material.Second material comprises tungsten (tungsten), molybdenum (molybdenum), platinum (platinum), ruthenium (ruthenium), iridium (iridium), tungsten titanium (titanium tungsten), tantalum pentoxide (tantalum pentoxide), hafnium oxide (hafnium oxide), aluminium oxide (aluminum oxide), chromium silicide (chromium silicide), niobium carbide (niobium carbide), rheium oxide (rhenium oxide), ramet (tantalum carbide), tantalum nitride (tantalum nitride), titanium carbide (titanium carbide), titanium oxide (titanium oxide), vanadium carbide (vanadium carbide), tungsten nitride (tungsten nitride), tungsten oxide (tungsten oxide), zirconium carbide (zirconium carbide), carborundum (SiC), the diamond like carbon (Si-DLC) of diamond like carbon (DLC) or silicon doping, but be not limited to above material.
The thickness of low acoustic impedance layer 152 and acoustic impedance layer 154 can be identical or differs greatly, and their thickness range is between 20nm～1000nm.
According to the present invention, low, the acoustic impedance layer that form on resonance structure 140 have reduced the frequency correction sensitivity of acoustic resonator 100 to 152 and 154, and then have helped acoustic resonator 100 is adapted to required resonance frequency exactly.Revise sensitivity to reduce be because reduced to be stored in acoustic energy in the passivation layer 160, thereby reduced to revise the influence of operation to frequency change.Shown in the form of Fig. 7, low, acoustic impedance layer is to also reducing the electromechanical coupling factor of acoustic resonator
And then reduce the bandwidth of the filter that resonator thus forms.
For example, number the acoustic resonator 100 of 2 structures, the material of its first electrode 142, piezoelectric layer 144, second electrode 146, low acoustic impedance layer 152, acoustic impedance layer 154 and passivation layer 160 is respectively Mo, AlN, Mo, SiO
2, W and SiO
2, the thickness of each layer is respectively 0.21 μ m, 1.606 μ m, 0.21 μ m, 0.68 μ m, 0.636 μ m and 0.3 μ m.In this embodiment, the thickness of low acoustic impedance layer 152 and acoustic impedance layer 154 all is respectively under the resonator resonance frequency in the layers of material 1/4th of corresponding wavelength.Perhaps, the thickness of low acoustic impedance layer 152 and acoustic impedance layer 154 can less than or greater than quarter-wave (as structure number 3 and numbering 4), thickness range tend to target thickness ± 15% within, but also not only be confined within this scope.
Correspondingly, the correction sensitivity of acoustic resonator 100 drops to
, this has reduced about 50 times with respect to traditional acoustic resonator (as the structure number in Fig. 7 form 1).While acoustic resonator 100
With respect to traditional resonator
Also reduce to some extent.
As shown in Figure 8, for such structure (numbering 2), at SiO
2The surface of passivation layer 160, normalized displacement amplitude is much smaller than traditional acoustic resonator, and the normalized displacement amplitude of traditional acoustic resonator (numbering 1) is as shown in figure 12.Correspondingly, SiO
2The material that absorbs on the passivation layer 160 is very little for the influence that resonance frequency is drifted about in time, thereby reduced the influence that acoustic resonator is subjected to frequency change, this influence is because due to the interaction of acoustic resonator and environment such as air or steam, and has relaxed the requirement to packaging air tightness to a great extent.Lamination layer structure may comprise a series of low, acoustic impedance layer, these acoustic impedance layers are positioned at the one or both sides of resonance structure, and material film is positioned on the air chamber, in SMR, lamination layer structure only is present in the top layer of resonance structure, because there has been acoustic mirror to exist between first electrode of resonance structure and substrate.
Lamination layer structure is also having another advantage aspect the dispersion characteristics that require the change acoustic resonator according to special applications.Shown in Figure 12 (a) is the emulation dispersion curve of traditional F BAR (structure number 1), this is an II type resonator, because AlN is the piezoelectric of II type, so the series resonance frequency (f of the cut-off frequency of resonator single order thickness extension vibration mode formula (TE-1) and resonator
s) identical.By in resonator, adding low, acoustic impedance layer, the dispersion curve type of FBAR or SMR can be become the I type from the II type, or become the II type from the I type with suitable thickness and mechanical material parameter (as density, elastic constant, velocity of sound or the like).Dispersion curve with the compound FBAR resonator of numbering 2 structures is shown in Fig. 8 (a).This resonator is an I type acoustic resonator, and the compressional wave cut-off frequency of its TE-1 pattern is higher than the cut-off frequency of second shearing wave.In addition, introduce lamination layer structure and can change chromatic dispersion intensity individually, this can learn by the dispersion curve of the acoustic resonator numbering 3 among the numbering 2 of the acoustic resonator in the comparison diagram 8 (a) and Fig. 9.
In addition, suitably change piezoelectric layer 144, low acoustic impedance layer 152 or/and the thickness of acoustic impedance layer 154 can keep acoustic resonator 100 higher relatively
Under the constant prerequisite, further reduce to revise sensitivity.For example, the structure number 3 in the table 1, the thickness of its piezoelectric layer 144, low acoustic impedance layer 152 and acoustic impedance layer 154 is respectively 1.617 μ m, 0.66 μ m and 0.63 μ m, and corresponding thickness differs very little in these thickness and the structure number 2.The correction sensitivity of the acoustic resonator of this structure (numbering 3) with
Be respectively
With 6.02%.Compare with the resonator of structure number 2, it is revised sensitivity and has reduced 35%, and
Almost and do not become.The dispersion curve of acoustic resonator (numbering 3) as shown in Figure 9.The acoustic resonator of structure number 2～5 is made of identical materials basically, but each layer thickness of the acoustic resonator of structure number 2～5 is different.The varied in thickness of material layer can cause each acoustic resonator correction sensitivity and
Different.
Form the material difference of low acoustic impedance layer 152 and/or acoustic impedance layer 154, can cause acoustic resonator 100 correction sensitivity and
Different.Structure number 6 shown in Fig. 7 form is when first electrode 142, piezoelectric layer 144, second electrode 146, low acoustic impedance layer 152, acoustic impedance layer 154 and passivation layer 160 are the W of CDO, 0.636 μ m of Mo, 0.425 μ m of AlN, 0.2 μ m of Mo, 1.62 μ m of 0.2 μ m and the SiO of 0.3 μ m by thickness respectively
2During composition, the correction sensitivity of acoustic resonator 100 is
, its correction sensitivity than traditional acoustic resonator (numbering 1 shown in Fig. 7 form) is approximately little 390 times, this mainly be since the acoustic impedance of CDO very low due to.Acoustic resonator 100
Be 5.91%, this is than traditional acoustic resonator
Little.The inside relative displacement of acoustic resonator (numbering 6) distributes as shown in figure 10.
Fig. 2 is the acoustic resonator 200 that obtains according to an alternative embodiment of the invention.Similar to acoustic resonator 100 shown in Figure 1, acoustic resonator 200 also comprises resonance structure 240, piezoelectric layer 244 that it has first electrode (hearth electrode) 242, form on first electrode 242 and second electrode (top electrode) 246 that forms on piezoelectric layer 244; Lamination layer structure 250, it comprises low acoustic impedance layer 252 and acoustic impedance layer 254.Lamination layer structure 250 is adjacent with the hearth electrode 242 of resonance structure 240.Other has Seed Layer 270 to be formed between resonance structure 240 and the lamination layer structure 250.
Substrate 210 has air chamber 230.Acoustic impedance layer 254 is forming in the substrate 210 and is being positioned on the air chamber 230.Low acoustic impedance layer 252 forms on acoustic impedance layer 254.Seed Layer 270 forms on the low acoustic impedance layer 252 of lamination layer structure 250, the material that forms Seed Layer 270 has aluminium nitride (aluminum nitride), aluminum oxynitride (aluminumoxynitride), tungsten nitride (tungsten nitride), titanium tungsten nitride (titanium tungsten nitride), silica (silicon oxide), silicon nitride (silicon nitride), carborundum (silicon carbide), or materials similar.The hearth electrode 242 of resonance structure 240 is formed on the Seed Layer 270.Passivation layer 260 is formed on the top electrode 246 of resonance structure 240, and the material that forms passivation layer 260 has carborundum (SiC), aluminium oxide (Al
2O
3), diamond like carbon (DLC), silica (SiO
2), silicon nitride (SiN), hydrophobic polymer (hydrophobic polymer), or materials similar.As shown in Figure 2, air chamber 230 also can be arranged in dielectric layer 220, and wherein dielectric layer 220 is formed on the substrate 210.And acoustic impedance layer 254 is forming on the dielectric layer 220 and is being positioned on the air chamber 230.Use lamination layer structure 250 can improve acoustic resonator, and can change the dispersion characteristics of resonator as required outside environmental change and self aging resistivity.
To acoustic resonator 100 shown in Figure 1 a pair of low, the acoustic impedance layer is similar with 154 to 152, the low acoustic impedance layer 252 of resonator 200 is made up of the material that acoustic impedance is lower than 20Mrayl, comprises silica (SiO
2), aluminium (Al), carbon doped silicon oxide (CDO), nanoporous methyl silsesquioxane (MSQ), nanoporous hydrogen silsesquioxane (HSQ), comprise nanoporous mixture (nano-porous mixtures of MSQ and HSQ), nano-glass (nanoglass), aeroge (aerogel), xerogel (xerogel), spin-coating glass (spin-on-glasses), Parylene (parylene), SiLK or the benzocyclobutene (BCB) of MSQ and HSQ, but be not limited to above material.Acoustic impedance layer 254 is made up of the material that acoustic impedance is higher than 40Mrayl, comprise tungsten (tungsten), molybdenum (molybdenum), platinum (platinum), ruthenium (ruthenium), iridium (iridium), tungsten titanium (titanium tungsten), tantalum pentoxide (tantalum pentoxide), hafnium oxide (hafniumoxide), aluminium oxide (aluminum oxide), chromium silicide (chromium silicide), niobium carbide (niobium carbide), rheium oxide (rhenium oxide), ramet (tantalum carbide), tantalum nitride (tantalum nitride), titanium carbide (titanium carbide), titanium oxide (titanium oxide), vanadium carbide (vanadium carbide), tungsten nitride (tungsten nitride), tungsten oxide (tungsten oxide), zirconium carbide (zirconium carbide), carborundum (SiC), the diamond like carbon (Si-DLC) of diamond like carbon (DLC) or silicon doping, but be not limited to above material.
The thickness range of low acoustic impedance layer 252 and acoustic impedance layer 254 all is 20nm～1000nm.
Fig. 3 is the acoustic resonator 300 that obtains according to still another embodiment of the invention, this resonator has two pairs of low, acoustic impedance layers to 350A and 350B, thereby can reduce the correction sensitivity of acoustic resonator 300 and improve acoustic resonator to outside environmental change and self aging resistivity.As shown in Figure 3, acoustic resonator 300 comprises the substrate 310 that has air chamber 330; Forming in the substrate 310 and be positioned at first low, acoustic impedance layer on the air chamber 330 350A; The Seed Layer 370 that forms on to 350A at first low, acoustic impedance layer; Resonance structure 340, it is included on the Seed Layer 370 hearth electrode 342 that forms, at piezoelectric layer 344 that forms on the hearth electrode 342 and the top electrode 346 that forms on piezoelectric layer 344; Second low, the acoustic impedance layer that forms on the top electrode 346 of resonance structure 340 is to 350B; And the passivation layer 360 that forms on to 350B at second low, acoustic impedance layer.
First low, acoustic impedance layer is included at first acoustic impedance layer 354 on the air chamber 330 and the first low acoustic impedance layer 352 between the first acoustic impedance layer 354 and Seed Layer 370 350A.Second low, acoustic impedance layer is included at second low acoustic impedance layer 356 on the top electrode 346 and the second acoustic impedance layer 358 between the second low acoustic impedance layer 356 and passivation layer 360 350B.
The identical or different material that the first and second low acoustic impedance layers 352 and 356 are lower than 20Mrayl by acoustic impedance is formed.The material that is used to form the low acoustic impedance layer described above can be used to form the first and second low acoustic impedance layers 352 and 356 equally.The identical or different material that the first and second acoustic impedance layers 354 and 358 are higher than 40Mrayl by acoustic impedance is formed.The material that is used to form the acoustic impedance layer described above can be used to form the first and second acoustic impedance layers 354 and 358 equally.In addition, the first and second low acoustic impedance layers 352 and 356 thickness can be identical with the thickness of the first and second acoustic impedance layers 354 and 358 or differ greatly.
Fig. 4 is the acoustic resonator 400 that obtains according to another embodiment of the invention.In this embodiment, acoustic resonator 400 is included in the hearth electrode 442 that forms in the substrate 410, and wherein substrate 410 has air chamber or acoustic mirror 430, and this air chamber or acoustic mirror 430 are positioned under the hearth electrode 442; The piezoelectric layer 444 that on hearth electrode 442, forms; At a pair of low, the acoustic impedance layer that forms on the piezoelectric layer 444 to 450 and the passivation layer 460 that forms on to 450 at low, acoustic impedance layer.Low, acoustic impedance layer is included in low acoustic impedance layer 452 that forms on the piezoelectric layer 444 and the acoustic impedance layer 454 that forms to 450 on low acoustic impedance layer 452.
In this embodiment,, tended to serve as top electrode by low acoustic impedance layer 452 to the one deck in 450 by low, acoustic impedance layer, low acoustic impedance layer 452 is formed resonance structure 440 with hearth electrode 442 and piezoelectric layer 444 like this.
In this embodiment, low acoustic impedance layer 452 is formed by metal material such as aluminium (Al) or aluminium alloy (aluminum alloy).The material that forms acoustic impedance layer 454 has tungsten (tungsten), molybdenum (molybdenum), platinum (platinum), ruthenium (ruthenium), iridium (iridium), tungsten titanium (titanium tungsten), tantalum pentoxide (tantalum pentoxide), hafnium oxide (hafnium oxide), aluminium oxide (aluminum oxide), chromium silicide (chromium silicide), niobium carbide (niobium carbide), rheium oxide (rhenium oxide), ramet (tantalum carbide), tantalum nitride (tantalum nitride), titanium carbide (titanium carbide), titanium oxide (titanium oxide), vanadium carbide (vanadium carbide), tungsten nitride (tungsten nitride), tungsten oxide (tungsten oxide), zirconium carbide (zirconium carbide), carborundum (SiC), the diamond like carbon (Si-DLC) of diamond like carbon (DLC) or silicon doping.The thickness of low acoustic impedance layer 452 and acoustic impedance layer 454 can be identical or differs greatly, and their thickness range is all between 20nm～1000nm.
In order to check in Fig. 7 form the correction sensitivity with numbering 8 and numbering 9 corresponding acoustic resonators 400, first electrode 442, piezoelectric layer 444, low acoustic impedance layer 452, acoustic impedance layer 454 and passivation layer 460 are respectively by Mo, AlN, Al, W and SiO
2Form, but each layer thickness is not quite similar.In numbering 8, the thickness of each material layer is respectively 0.29 μ m, 2 μ m, 0.787 μ m, 0.636 μ m and 0.3 μ m.Yet in numbering 9, each layer thickness is respectively 0.15 μ m, 2.18 μ m, 0.937 μ m, 0.636 μ m and 0.3 μ m accordingly.All be about with the correction sensitivity of numbering 8 and numbering 9 corresponding resonators
, this is with respect to traditional acoustic resonator (numbering 1)
Reduced a lot.But number 9
Ratio numbering 8
Big approximately 8%.
Fig. 5 is the acoustic resonator 500 that obtains according to still another embodiment of the invention.Similar to acoustic resonator 400 shown in Figure 4, acoustic resonator 500 has one deck low acoustic impedance layer 552 and one deck acoustic impedance layer 554.Acoustic impedance layer 554 forms in the substrate 510 that has air chamber 530.Low acoustic impedance layer 552 forms on acoustic impedance layer 554.Piezoelectric layer 544 forms on low acoustic impedance layer 552.Top electrode 546 forms on piezoelectric layer 544.In this embodiment, low acoustic impedance layer 552 serves as hearth electrode, constitutes resonance structure 540 with piezoelectric layer 544 and top electrode 546.Use a pair of low acoustic impedance layer 552 and acoustic impedance layer 554 can improve acoustic resonator, and can change the dispersion characteristics of resonator as required outside environmental change and self aging resistivity.
As shown in Figure 5, air chamber 530 also can be arranged in dielectric layer 520, and wherein dielectric layer 520 is formed on the substrate 510.And acoustic impedance layer 554 forms on dielectric layer 520, and is positioned on the air chamber 530.
Fig. 6 is the acoustic resonator 600 that obtains according to one embodiment of present invention.That acoustic resonator 600 has is first and second low, the acoustic impedance layer is to 650A and 650B, and at first low, acoustic impedance layer to 650A and second low, acoustic impedance layer to the piezoelectric layer between the 650B 644.The first acoustic impedance layer 654 on the air chamber 630 of being positioned at that first low, acoustic impedance layer comprises the first low acoustic impedance layer 652 and forming in the substrate 610 650A.Second low, acoustic impedance layer is included in second low acoustic impedance layer 656 that forms on the piezoelectric layer 644 and the second acoustic impedance layer 658 that forms to 650B on the second low acoustic impedance layer 656.In this embodiment, the first and second low acoustic impedance layers 652 and 656 serve as the hearth electrode and the top electrode of resonance structure 640 respectively.They tend to be formed by aluminium (Al) and aluminium alloy (aluminum alloy).The material that forms the first and second acoustic impedance layers 654 and 658 has tungsten (tungsten), molybdenum (molybdenum), platinum (platinum), ruthenium (ruthenium), iridium (iridium), tungsten titanium (titanium tungsten), tantalum pentoxide (tantalum pentoxide), hafnium oxide (hafnium oxide), aluminium oxide (aluminum oxide), chromium silicide (chromium silicide), niobium carbide (niobium carbide), rheium oxide (rhenium oxide), ramet (tantalum carbide), tantalum nitride (tantalum nitride), titanium carbide (titanium carbide), titanium oxide (titanium oxide), vanadium carbide (vanadium carbide), tungsten nitride (tungsten nitride), tungsten oxide (tungsten oxide), zirconium carbide (zirconium carbide), carborundum (SiC), the diamond like carbon (Si-DLC) of diamond like carbon (DLC) or silicon doping, but be not limited to above material.
In addition, passivation layer 660 forms on the second acoustic impedance layer 658.
The present invention also is included in the acoustic resonator of processing in the substrate on the other hand.This acoustic resonator comprises: Seed Layer; Resonance structure, it has at first electrode that forms on the Seed Layer, the piezoelectric layer that forms on first electrode and second electrode that forms on piezoelectric layer; And the lamination layer structure that is associated with resonance structure, thereby can improve acoustic resonator to environmental change and self aging resistivity, also can reduce correction sensitivity significantly, or optimize the dispersion characteristics of acoustic resonator.
In one embodiment, lamination layer structure comprises a series of have first material layer of acoustic impedance and second material layers with low acoustic impedance, and wherein acoustic impedance layer and low acoustic impedance layer are stacked alternately.In one embodiment, each layer thickness of lamination layer structure all is the quarter-wave odd-multiple of sound wave in each material layer under the resonance frequency of resonator.
In one embodiment, lamination layer structure comprises first material layer with low acoustic impedance adjacent with Seed Layer and second material layer with acoustic impedance that forms on first material layer, and such first material layer is located between the Seed Layer and second material layer.In another embodiment, lamination layer structure further is included in the 3rd material layer with low acoustic impedance that forms on second electrode of resonance structure and the 4th material layer with acoustic impedance that forms on the 3rd material layer.
In another embodiment, lamination layer structure is included in first material layer with low acoustic impedance that forms on second electrode of resonance structure and second material layer with acoustic impedance that forms on first material layer.
In a word, the invention describes the acoustic resonator of using lamination layer structure, wherein lamination layer structure is stacked alternately and is formed by a series of high acoustic impedance materials layers and layer of low acoustic impedance material, thereby improve acoustic resonator to environmental change and self aging resistivity, and significantly reduced correction sensitivity, or/and optimize the dispersion characteristics of acoustic resonator.
Above-mentioned description to several typical bulk acoustic wave resonators among the present invention only is in order to illustrate that these explanations are not very detailed, can not limit the definite form of invention.In view of the present invention, can make many modifications and variations.
Claims (31)
1. an acoustic resonator is characterized in that, comprising:
(a) have the substrate of air chamber;
(b) form in the substrate and be positioned on the air chamber first low, the acoustic impedance layer is right;
(c) first low, acoustic impedance layer on the Seed Layer that forms;
(d) first electrode that on Seed Layer, forms;
(e) piezoelectric layer that on first electrode, forms;
(f) second electrode that on piezoelectric layer, forms;
(g) on second electrode, form second low, the acoustic impedance layer is right;
(h) second low, acoustic impedance layer on the passivation layer that forms.
2. acoustic resonator according to claim 1 is characterized in that, described first low, acoustic impedance layer is to comprising the first acoustic impedance layer that is positioned on the air chamber, and the first low acoustic impedance layer between the first acoustic impedance layer and Seed Layer;
Described second low, acoustic impedance layer is to being included in the second low acoustic impedance layer that forms on second electrode, and the second acoustic impedance layer that forms between the second low acoustic impedance layer and passivation layer.
3. acoustic resonator according to claim 1 is characterized in that, the described first and second low acoustic impedance layers are formed by first material that acoustic impedance is lower than 20Mrayl; The described first and second acoustic impedance layers are formed by second material that acoustic impedance is higher than 40Mrayl.
4. acoustic resonator according to claim 3, it is characterized in that described first material comprises silica, aluminium, carbon doped silicon oxide, nanoporous methyl silsesquioxane, nanoporous hydrogen silsesquioxane, comprises nanoporous mixture, nano-glass, aeroge, xerogel, spin-coating glass, Parylene, SiLK or the benzocyclobutene of MSQ and HSQ;
Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
5. acoustic resonator according to claim 2 is characterized in that, the thickness range of the described first low acoustic impedance layer and the second low acoustic impedance layer, the first acoustic impedance layer and the second acoustic impedance layer is 20nm～1000nm.
6. acoustic resonator according to claim 1 is characterized in that, the material that forms described passivation layer comprises carborundum, aluminium oxide, diamond, diamond like carbon, silica, silicon nitride or hydrophobic polymer, or their combination.
7. acoustic resonator according to claim 1 is characterized in that, the material that forms described Seed Layer comprises aluminium nitride, aluminum oxynitride, tungsten nitride, titanium tungsten nitride, silica, silicon nitride or carborundum, or their combination.
8. an acoustic resonator is characterized in that, comprising:
(a) substrate;
(b) by first electrode of substrate support;
(c) piezoelectric layer that on first electrode, forms;
(d) second electrode that on piezoelectric layer, forms;
(e) link to each other with first or second electrode a pair of low, the acoustic impedance layer is right;
(f) if low, acoustic impedance layer is to linking to each other with first electrode, then passivation layer is formed on second electrode, as if low, acoustic impedance layer to linking to each other with second electrode, then passivation layer be formed at low, acoustic impedance layer on.
9. acoustic resonator according to claim 8 is characterized in that described base strap has air chamber, and low, acoustic impedance layer is to forming in substrate, and it is positioned on the air chamber, and links to each other with first electrode.
10. acoustic resonator according to claim 8 is characterized in that described base strap has air chamber or acoustic mirror, and first electrode is forming in the substrate and is being positioned on air chamber or the acoustic mirror, and low, acoustic impedance layer is to linking to each other with second electrode.
11. acoustic resonator according to claim 8 is characterized in that, described low, acoustic impedance layer is to comprising one deck low acoustic impedance layer and one deck acoustic impedance layer.
12. acoustic resonator according to claim 11 is characterized in that, described low acoustic impedance layer is between piezoelectric layer and acoustic impedance layer.
13. acoustic resonator according to claim 11 is characterized in that, described low acoustic impedance layer is formed by first material that acoustic impedance is lower than 20Mrayl; Described acoustic impedance layer is formed by second material that acoustic impedance is higher than 40Mrayl.
14. acoustic resonator according to claim 13, it is characterized in that described first material comprises silica, aluminium, carbon doped silicon oxide, nanoporous methyl silsesquioxane, nanoporous hydrogen silsesquioxane, comprises nanoporous mixture, nano-glass, aeroge, xerogel, spin-coating glass, Parylene, SiLK or the benzocyclobutene of MSQ and HSQ;
Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
15. acoustic resonator according to claim 11 is characterized in that, the thickness range of described low acoustic impedance layer and acoustic impedance layer is 20nm～1000nm.
16. acoustic resonator according to claim 8 is characterized in that, the formation material of described passivation layer comprises carborundum, aluminium oxide, diamond, class carbon diamond, silica, silicon nitride or hydrophobic polymer, or their combination.
17. an acoustic resonator is characterized in that, comprising:
(a) substrate;
(b) by first electrode of substrate support;
(c) piezoelectric layer that on first electrode, forms;
(d) second electrode that on piezoelectric layer, forms;
(e) passivation layer that on second electrode, forms,
Have at least in described first electrode and second electrode one comprise a pair of low, the acoustic impedance layer is right.
18. acoustic resonator according to claim 17 is characterized in that, described base strap has air chamber, first electrode be included in the substrate form and be positioned on the air chamber a pair of low, the acoustic impedance layer is right.
19. acoustic resonator according to claim 17 is characterized in that, described base strap has air chamber or acoustic mirror, and first electrode comprises the layer of metal electrode, and this metal electrode is forming in the substrate and is being positioned on air chamber or the acoustic mirror.
20. acoustic resonator according to claim 17 is characterized in that, described low, acoustic impedance layer is to comprising one deck low acoustic impedance layer and one deck acoustic impedance layer.
21. acoustic resonator according to claim 20 is characterized in that, described low acoustic impedance layer is between piezoelectric layer and acoustic impedance layer.
22. acoustic resonator according to claim 20 is characterized in that, described low acoustic impedance layer is formed by first material that acoustic impedance is lower than 20Mrayl; Described acoustic impedance layer is formed by second material that acoustic impedance is higher than 40Mrayl.
23. acoustic resonator according to claim 22 is characterized in that, described first material comprises aluminum or aluminum alloy; Described second material comprises the diamond like carbon of tungsten, molybdenum, platinum, ruthenium, iridium, tungsten titanium, tantalum pentoxide, hafnium oxide, aluminium oxide, chromium silicide, niobium carbide, rheium oxide, ramet, tantalum nitride, titanium carbide, titanium oxide, vanadium carbide, tungsten nitride, tungsten oxide, zirconium carbide, carborundum, diamond like carbon or silicon doping.
24. acoustic resonator according to claim 20 is characterized in that, the thickness range of described low acoustic impedance layer and acoustic impedance layer is 20nm～1000nm.
25. acoustic resonator according to claim 17 is characterized in that, the formation material of described passivation layer comprises carborundum, aluminium oxide, diamond, class carbon diamond, silica, silicon nitride or hydrophobic polymer, or their combination.
26. an acoustic resonator of processing in substrate is characterized in that, comprising:
(a) Seed Layer;
(b) resonance structure, described resonance structure are included in first electrode that forms on the Seed Layer, the piezoelectric layer that forms and form on piezoelectric layer on first electrode second electrode;
(c) composite bed that is associated with resonance structure, it can improve acoustic resonator to environmental change and self aging resistivity, significantly reduces and revises sensitivity, or optimize the dispersion characteristics of acoustic resonator.
27. the acoustic resonator of in substrate, processing according to claim 26, it is characterized in that, described lamination layer structure comprises a series of have first material layer of acoustic impedance and second material layers with low acoustic impedance, and wherein high acoustic impedance materials layer and layer of low acoustic impedance material are stacked alternately.
28. the acoustic resonator of processing in substrate according to claim 26 is characterized in that, each layer thickness in the described lamination layer structure all is the quarter-wave odd-multiple of sound wave in each material layer under the resonance frequency of resonator.
29. the acoustic resonator of in substrate, processing according to claim 26, it is characterized in that, described lamination layer structure comprises first material layer with low acoustic impedance adjacent with Seed Layer, with second material layer with acoustic impedance that forms on first material layer, such first material layer is located between the Seed Layer and second material layer.
30. the acoustic resonator of in substrate, processing according to claim 29, it is characterized in that, described lamination layer structure further is included in the 3rd material layer with low acoustic impedance that forms on second electrode of resonance structure and the 4th material layer with acoustic impedance that forms on the 3rd material layer.
31. the acoustic resonator of in substrate, processing according to claim 26, it is characterized in that, described lamination layer structure is included in first material layer with low acoustic impedance that forms on second electrode of resonance structure and second material layer with acoustic impedance that forms on first material layer.
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| CN110868183B (en) * | 2019-04-23 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Resonator and filter |
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