CN102013622A - Single longitudinal mode microchip laser with adjustable frequency - Google Patents
Single longitudinal mode microchip laser with adjustable frequency Download PDFInfo
- Publication number
- CN102013622A CN102013622A CN2010105489641A CN201010548964A CN102013622A CN 102013622 A CN102013622 A CN 102013622A CN 2010105489641 A CN2010105489641 A CN 2010105489641A CN 201010548964 A CN201010548964 A CN 201010548964A CN 102013622 A CN102013622 A CN 102013622A
- Authority
- CN
- China
- Prior art keywords
- longitudinal mode
- single longitudinal
- microchip
- mode laser
- pump light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to the field of lasers, in particular to a single longitudinal mode microchip laser. The single longitudinal mode microchip laser with adjustable frequency comprises pump light sources for generating pump light, a collimating lens for collimating the pump light, a coupling lens for coupling the pump light to a microchip type laser cavity and a microchip type single longitudinal mode laser cavity, wherein the microchip type single longitudinal mode laser cavity at least comprises a laser gain medium sheet and an optical crystal wafer, which are glued, as well as endoscopic films plated on the front and the back light through end surfaces, and the single longitudinal mode laser output frequency can be regulated by regulating different incident pump points of the pump light at the microchip type single longitudinal mode laser cavity. The single longitudinal mode microchip laser with the adjustable frequency uses two or more pump light sources for pump generation respectively, thereby generating two or more separated beams of laser. Therefore, the interaction is small, the frequency is more stable, and the frequency difference is more stable and controllable.
Description
Technical field
The present invention relates to field of lasers, relate in particular to single longitudinal mode laser in microchip.
Background technology
Two-frequency laser is in the research of communication optical fiber; The satellite transmission IMAGE PROCESSING; The accurate measurement of relative phase and displacement; The research of optical rotatory substance in the light industry chemical industry; The measurement of optical element and optical film performance; Precision optics is measured; Precision optical machinery is measured; The Laser Power Devices of precision instrument and Advanced Concepts Laboratory; Form the two-frequency laser array, the fields such as two optical frequency frequency differences that produce the hundreds of megahertz all are widely used.
In fields such as accurate measurement, frequency references, obtaining of dual wavelength that frequency gap is fixing or even multi wave length illuminating source is extremely important.The double-wavelength light source in especially tangible Michelson's interferometer intermediate frequency gap obtains by apply magnetic field in the He-Ne laser in accurate measurement, and the laser of this kind structure has the bigger shortcoming of complex structure volume.
It number is a kind of two-frequency laser that 200810071796.4 technical scheme proposes that Chinese patent application is arranged again, the resonant cavity of its front to pump light after remaining pump light pumping back resonant cavity obtain double-frequency laser output with this, because the unsteadiness that pump light absorbs is the power stability of two frequency therefore, frequency stability, the stability of difference on the frequency is all relatively poor.
Summary of the invention
Therefore, the present invention is directed to the deficiency that above-mentioned two-frequency laser exists, proposed a kind of laser structure of realizing adjustable fixed frequency gap simple in structure, it can realize the double frequency in adjustable frequency gap even the laser structure of multifrequency.
The present invention adopts following technical scheme:
A kind of single longitudinal mode laser in microchip of frequency adjustable comprises the collimating lens, coupling pump light of the pump light source that produces pump light, collimation pump light coupled lens and the microchip single longitudinal mode laser chamber to micro-piece type laser cavity.Wherein, described microchip single longitudinal mode laser chamber comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge at least, and the chamber mirror film that leads to the light end face before and after being plated on, by the different incident pumping points of adjusting pump light, and then regulate the single longitudinal mode laser output frequency in microchip single longitudinal mode laser chamber.
Further, Xie Jiao ≦ 10 of the optical crystal sheet of the described band angle of wedge ".
Further, the Hou Du of described gain medium sheet ≦ 100 μ m.
Further, make the position of focal beam spot skew occur by the position of regulating coupled lens, and then realize regulating the offset of pump light at the different incident pumping points in microchip single longitudinal mode laser chamber.
Further, described pump light source is 1, and by a beam splitter be divided into space interval 2 the bundle pump lights come the described microchip single longitudinal mode laser of pumping chamber.The position of described beam splitter can be regulated.
Further, described pump light source be 2 or more than, the pump light that produces the space interval of respective numbers bundle comes the described microchip single longitudinal mode laser of pumping chamber.The pump power of described pump light source can be regulated.
Further, described gain medium sheet is isotropic gain medium, or anisotropic gain medium.
Further, the optical crystal sheet of the described band angle of wedge is identical with the gain medium sheet or the crystal wafer of different substrates material.
Further, other optical crystal sheet is also inserted in described microchip single longitudinal mode laser chamber.
Further, described other optical crystal sheet comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
The present invention adopts as above technical scheme, a kind of laser structure of realizing adjustable fixed frequency gap simple in structure, and it can realize the double frequency in adjustable frequency gap even the laser structure of multifrequency.The advantage that the microplate of this kind structure has is: by 2 or the pumping generation respectively of above pump light, produce two bundle or the multiple lasers that separate.Therefore, it influences each other less, and frequency is more stable, and difference on the frequency is stable and controllable more also.
Description of drawings
Fig. 1 is the structural representation of embodiments of the invention 1.
Fig. 2 is the structural representation of embodiments of the invention 2.
Fig. 3 a is the 1st kind of structural representation in microchip single longitudinal mode laser of the present invention chamber.
Fig. 3 b is the 2nd kind of structural representation in microchip single longitudinal mode laser of the present invention chamber.
Fig. 3 c is the 3rd kind of structural representation in microchip single longitudinal mode laser of the present invention chamber.
Fig. 3 d is the 4th kind of structural representation in microchip single longitudinal mode laser of the present invention chamber.
Fig. 3 e is the 5th kind of structural representation in microchip single longitudinal mode laser of the present invention chamber.
Embodiment
Now the present invention is further described with embodiment in conjunction with the accompanying drawings.
The single longitudinal mode laser in microchip of frequency adjustable of the present invention comprises the collimating lens, coupling pump light of the pump light source that produces pump light, collimation pump light coupled lens and the microchip single longitudinal mode laser chamber to micro-piece type laser cavity.Wherein, described microchip single longitudinal mode laser chamber comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge at least, and the chamber mirror film that leads to the light end face before and after being plated on, by the different incident pumping points of adjusting pump light, and then regulate the single longitudinal mode laser output frequency in microchip single longitudinal mode laser chamber.
Consult the single longitudinal mode laser in microchip of frequency adjustable shown in Figure 1, whole laser cavity angle is δ θ, and promptly the value with the angle of wedge δ θ of the optical crystal sheet 202 of the angle of wedge should be unlikely to too high to guarantee its pumping threshold that produces laser generation within 10 seconds.Two pumping point location gap are L, and the emission wavelength of establishing 1 road laser is λ
0, effective cavity length is d, we just can obtain the frequency gap of 1 road laser and 2 road laser so: Δ λ=λ
0* L*tan (δ θ)/d, the pumping point is got different positions and is just had different Δ λ, promptly reaches the purpose of fine setting frequency gap.
Wherein, 101 is the semiconductor laser pumping light source, and 102a is the optical alignment element, 103 is light-splitting device, adopts the NPBS beam splitting, also can adopt other light-splitting devices, can beam splitting be that two bundles also can be expanded and are divided into multiple beam, to realize the output of light beam laser, 102b be the optical focus element.104 is microchip single longitudinal mode laser chamber, and it is made up of ultra-thin gain medium 201 and optical wedge gusset plate 202, and the front cavity mirror film 203 and the Effect of Back-Cavity Mirror film 204 that lead to the light end face before and after being plated on.The THICKNESS CONTROL of ultra-thin gain medium 201 realizes single longitudinal mode output to guarantee short gain media within 100um.It can be isotropic gain medium, as Nd:YAG, can be anisotropic gain medium also, as Nd:YVO
4202 optical crystal sheets for the band angle of wedge, i.e. optical wedge gusset plate, its material can be the undoped host material identical with gain medium, as YAG/YVO
4, also can be similar or different Single-handed Dinghy open-Laser optical material such as SF11 of optical property, K9 etc.
Of particular note, if the optical wedge gusset plate 202 identical host material that is undoped and gain medium 201, as YAG/YVO
4, so therefore 1 road laser is identical with the temperature variant frequency drift of 2 road laser because whole laser cavity has identical hot light characteristic, can realize the high-temperature stability of difference on the frequency.If optical wedge gusset plate 202 is the different optical material of optical property, its frequency amount of varying with temperature of 1 road laser and 2 road laser will be different.
Adopt same semiconductor pumped light source 101, we can realize the adjustment of relative pumping position of Nd and then the adjustment of realization frequency gap by the relative position of regulating beam splitting element 103 and optical focus element 102b.
Consult shown in Figure 2ly, be another example structure of patent of the present invention.It adopts two semiconductors sharp pumping source 101a, 101b to come the diverse location in pump micro-slice formula single longitudinal mode laser chamber 104 to produce different laser output wavelengths respectively.By adjusting the watt level that different semiconductors swash pumping source 101a, 101b, it is long to produce different effective laser cavities with this thermal effect that changes diverse location in the microchip single longitudinal mode laser chamber 104, can finely tune the difference on the frequency of two (or a plurality of) laser output wavelengths like this.Can make also that in addition the position of focal beam spot skew occurs to reach the purpose of adjusting the outgoing laser beam difference on the frequency by the position that fine adjustment collimates condenser lens 102.Described pump light source can also be 3 or more than, the pump light that produces the space interval of respective numbers bundle comes the described microchip single longitudinal mode laser of pumping chamber 104.
Consult shown in Fig. 3 a-Fig. 3 e, microchip single longitudinal mode laser of the present invention chamber 104 can be a structure of inserting or do not insert other optical crystal sheet, and the optical crystal sheet comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
For example, be the microchip laserresonator of forming by ultra-thin gain medium 201 and ordinary optical angle of wedge sheet 202 among the embodiment 1 shown in Fig. 3 a.The microchip laserresonator that the optical wedge gusset plate 206 by the nonlinear crystal of ultra-thin gain medium 201 and KTP shown in Fig. 3 b is formed.The microchip laserresonator of being made up of heat radiation crystal 2 05, ultra-thin gain medium 201 and ordinary optical angle of wedge sheet 202 shown in Fig. 3 c, the crystal that dispels the heat can be YAG, YVO4 etc.The microchip laserresonator that nonlinear crystal sheet 207 and ordinary optical angle of wedge sheet 202 by ultra-thin gain medium 201, LBO shown in Fig. 3 d formed.Shown in Fig. 3 e by heat radiation crystal 2 05, ultra-thin gain medium 201, the nonlinear crystal sheet 207 of LBO and the microchip laserresonator that ordinary optical angle of wedge sheet 202 is formed.All introduce nonlinear crystal among Fig. 3 b, Fig. 3 d, Fig. 3 e and can realize the conversion of basic frequency laser wavelength.The alternative of such laser cavity structure can be multiple, and is no longer exhaustive and give unnecessary details in this.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present invention that do not break away from appended claims and limited; can make various variations to the present invention in the form and details, be protection scope of the present invention.
Claims (12)
1. the single longitudinal mode laser in microchip of a frequency adjustable, comprise the collimating lens, coupling pump light of the pump light source that produces pump light, collimation pump light coupled lens and microchip single longitudinal mode laser chamber to micro-piece type laser cavity, it is characterized in that: described microchip single longitudinal mode laser chamber comprises a gain medium sheet of gummed and the optical crystal sheet of a band angle of wedge at least, and the chamber mirror film that leads to the light end face before and after being plated on, by the different incident pumping points of adjusting pump light, and then regulate the single longitudinal mode laser output frequency in microchip single longitudinal mode laser chamber.
2. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1 is characterized in that: Xie Jiao ≦ 10 of the optical crystal sheet of the described band angle of wedge ".
3. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1 is characterized in that: the Hou Du of described gain medium sheet ≦ 100 μ m.
4. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1, it is characterized in that: make the position of focal beam spot skew occur by the position of regulating coupled lens, and then realize regulating the offset of pump light at the different incident pumping points in microchip single longitudinal mode laser chamber.
5. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1, it is characterized in that: described pump light source is 1, and comes the described microchip single longitudinal mode laser of pumping chamber by the 2 bundle pump lights that a beam splitter is divided into space interval.
6. the single longitudinal mode laser in microchip of frequency adjustable according to claim 5, it is characterized in that: the position of described beam splitter can be regulated.
7. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1 is characterized in that: described pump light source be 2 or more than, the pump light that produces the space interval of respective numbers bundle comes the described microchip single longitudinal mode laser of pumping chamber.
8. the single longitudinal mode laser in microchip of frequency adjustable according to claim 7, it is characterized in that: the pump power of described pump light source can be regulated.
9. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1, it is characterized in that: described gain medium sheet is isotropic gain medium, or anisotropic gain medium.
10. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1, it is characterized in that: the optical crystal sheet of the described band angle of wedge is identical with the gain medium sheet or the crystal wafer of different substrates material.
11. the single longitudinal mode laser in microchip of frequency adjustable according to claim 1 is characterized in that: other optical crystal sheet is also inserted in described microchip single longitudinal mode laser chamber.
12. the single longitudinal mode laser in microchip of frequency adjustable according to claim 11 is characterized in that: described other optical crystal sheet comprises heat radiation crystal wafer, linear crystal sheet, nonlinear crystal sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548964.1A CN102013622B (en) | 2010-11-18 | 2010-11-18 | A kind of single longitudinal mode laser in microchip of frequency-adjustable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010548964.1A CN102013622B (en) | 2010-11-18 | 2010-11-18 | A kind of single longitudinal mode laser in microchip of frequency-adjustable |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102013622A true CN102013622A (en) | 2011-04-13 |
| CN102013622B CN102013622B (en) | 2016-01-13 |
Family
ID=43843696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010548964.1A Active CN102013622B (en) | 2010-11-18 | 2010-11-18 | A kind of single longitudinal mode laser in microchip of frequency-adjustable |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102013622B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412497A (en) * | 2011-09-16 | 2012-04-11 | 清华大学 | One-chip neodymium-doped yttrium aluminum garnet (Nd:YAG) laser capable of outputting multiple beams of laser light simultaneously |
| CN103227407A (en) * | 2013-04-19 | 2013-07-31 | 杭州电子科技大学 | Double-frequency microchip laser device based on adjustable frequency difference |
| CN105470793A (en) * | 2015-12-29 | 2016-04-06 | 哈尔滨工业大学 | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal |
| CN106471685A (en) * | 2014-01-24 | 2017-03-01 | 加州理工学院 | Double frequency light source |
| US10041782B2 (en) | 2015-11-23 | 2018-08-07 | Industrial Technology Research Institute | Apparatus for measuring length of optical resonant cavity |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093930A (en) * | 2007-07-26 | 2007-12-26 | 福州高意通讯有限公司 | Single longitudinal mode laser in microchip |
| CN101242075A (en) * | 2008-01-30 | 2008-08-13 | 福州高意通讯有限公司 | Optical structure and its application |
| CN101340051A (en) * | 2008-08-27 | 2009-01-07 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN101355227A (en) * | 2008-09-11 | 2009-01-28 | 福州高意通讯有限公司 | Method for implementing dual-frequency output laser |
| CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
| CN201478677U (en) * | 2009-08-10 | 2010-05-19 | 福州高意通讯有限公司 | Pumping structure used for a plurality of lasers |
-
2010
- 2010-11-18 CN CN201010548964.1A patent/CN102013622B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093930A (en) * | 2007-07-26 | 2007-12-26 | 福州高意通讯有限公司 | Single longitudinal mode laser in microchip |
| CN101242075A (en) * | 2008-01-30 | 2008-08-13 | 福州高意通讯有限公司 | Optical structure and its application |
| CN101340051A (en) * | 2008-08-27 | 2009-01-07 | 福州高意通讯有限公司 | Single longitudinal mode laser |
| CN101355227A (en) * | 2008-09-11 | 2009-01-28 | 福州高意通讯有限公司 | Method for implementing dual-frequency output laser |
| CN101388521A (en) * | 2008-10-14 | 2009-03-18 | 福州高意通讯有限公司 | Method realizing adjustment of laser frequency difference and laser thereof |
| CN201478677U (en) * | 2009-08-10 | 2010-05-19 | 福州高意通讯有限公司 | Pumping structure used for a plurality of lasers |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412497A (en) * | 2011-09-16 | 2012-04-11 | 清华大学 | One-chip neodymium-doped yttrium aluminum garnet (Nd:YAG) laser capable of outputting multiple beams of laser light simultaneously |
| CN103227407A (en) * | 2013-04-19 | 2013-07-31 | 杭州电子科技大学 | Double-frequency microchip laser device based on adjustable frequency difference |
| CN106471685A (en) * | 2014-01-24 | 2017-03-01 | 加州理工学院 | Double frequency light source |
| CN106471685B (en) * | 2014-01-24 | 2019-07-09 | 加州理工学院 | Double frequency light source |
| US10041782B2 (en) | 2015-11-23 | 2018-08-07 | Industrial Technology Research Institute | Apparatus for measuring length of optical resonant cavity |
| CN105470793A (en) * | 2015-12-29 | 2016-04-06 | 哈尔滨工业大学 | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102013622B (en) | 2016-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Brignon | Coherent laser beam combining | |
| Psaila et al. | Er: Yb-doped oxyfluoride silicate glass waveguide amplifier fabricated using femtosecond laser inscription | |
| CN102013622B (en) | A kind of single longitudinal mode laser in microchip of frequency-adjustable | |
| Flores et al. | Multi-kilowatt diffractive coherent combining of pseudorandom-modulated fiber amplifiers | |
| Liu et al. | Phase locking in a fiber laser array with varying path lengths | |
| JP2011508965A5 (en) | ||
| CN101772721A (en) | Optical arrangement for generating multi-beams | |
| CN203193117U (en) | A laser coherence length continuously-adjusting device | |
| US20210103154A1 (en) | Coherently combined fiber laser amplifier system including optically monolithic phased array with compact tiles | |
| TW201445840A (en) | Fiber laser | |
| CN101388521B (en) | Method for realizing adjustment of laser frequency difference and laser thereof | |
| CN101483317A (en) | Pump mode for semiconductor laser | |
| Bae et al. | Controllable Dynamic Single‐and Dual‐Channel Graphene Q‐Switching in a Beam‐Splitter‐Type Channel Waveguide Laser | |
| CN101986484A (en) | Laser triple frequency system | |
| CN103036143B (en) | Method and device for laser coherence length continuous adjustment | |
| He et al. | Experimental demonstration of phase locking of a two-dimensional fiber laser array using a self-imaging resonator | |
| Li et al. | Femtosecond laser fabrication of large-core fiber Bragg gratings for high-power fiber oscillators | |
| CN101355227B (en) | Method for implementing dual-frequency output laser | |
| CN103779771A (en) | High power dual frequency solid-state microchip laser device | |
| CN107370015B (en) | Wavelength division multiplexing multi-wavelength frequency doubling optical fiber laser device | |
| JPH11168252A (en) | Small solid-state laser | |
| CN103227407A (en) | Double-frequency microchip laser device based on adjustable frequency difference | |
| CN102013621B (en) | Tunable dual-frequency laser | |
| RU2339138C2 (en) | Solid-body laser with diode pumping (versions) | |
| CN101272030A (en) | Tunable microchip laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20171017 Address after: Jinan District Fuk new road 350000 Fuzhou city of Fujian province No. 253 CATIC industrial district Patentee after: Fuzhou Photop Technologies Inc. Address before: No. 39 Fuxing Road, Jinan District, Fuzhou city of Fujian Province in 360014 Patentee before: Photop Technologies, Inc. |