CN101355227A - Method for implementing dual-frequency output laser - Google Patents
Method for implementing dual-frequency output laser Download PDFInfo
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- CN101355227A CN101355227A CNA2008100717964A CN200810071796A CN101355227A CN 101355227 A CN101355227 A CN 101355227A CN A2008100717964 A CNA2008100717964 A CN A2008100717964A CN 200810071796 A CN200810071796 A CN 200810071796A CN 101355227 A CN101355227 A CN 101355227A
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Abstract
The invention relates to the laser field, in particular to a method for realizing double-frequency output lasers. The method for realizing double-frequency output lasers comprises the following steps that: a first microchip laser and a second microchip laser are pumped by a pump light source, so as to ensure that the first microchip laser and the second microchip laser have optical thickness difference in cavity length, and furthermore, the range of the optical thickness difference is between 0 and 0.1 mm. The first microchip laser and the second microchip laser are a single whole through optical cement, gluing or deepened optical cement. Two single-longitudinal-mode output fundamental wave or frequency doubled laser output lasers with little difference in wavelength are formed through the pumping of the same pumping source, so as to obtain a microchip-type double-frequency laser which is used for double-frequency laser heterodyne interferometers and replaces the common double-frequency He-Ne laser. As the invention puts forward a novel method for realizing double-frequency output lasers, the double-frequency laser in small size can be obtained.
Description
Technical field
The present invention relates to laser field, relate in particular to a kind of method that realizes dual-frequency output laser.
Background technology
In the double-frequency laser heterodyne ineterferometer, adopt double frequency output helium one neon laser.Helium one neon laser of double frequency output is the magnetic field that adds about 0.03T at helium one neon laser light pipe axial direction, because Zeemen effect and laser frequency pulling effect, the composition that will comprise two frequencies in the emergent light of laser, they are respectively at the left circularly polarized light right-circularly polarized light, as if the frequency of representing them with υ 1, υ 2, frequency difference δ υ=υ 1-υ 2 is approximately 1.5MHZ.Frequency difference δ υ is directly proportional with externally-applied magnetic field intensity, if externally-applied magnetic field is constant, this frequency difference value can not change yet.
Because the He-Ne laser is gas laser, its volume is big, can the application experiment room environmental, and especially impact resistance is limited, and this also is limited in some needs to use in small size and the cubing.The present invention proposes a kind of method of new realization dual-frequency output laser, to obtain undersized two-frequency laser.
Summary of the invention
For achieving the above object, the present invention adopts following technical scheme:
The method of realization dual-frequency output laser of the present invention is by pump light source pumping first micro-slice laser and second micro-slice laser; Make described first micro-slice laser chamber length have optical thickness poor with the second micro-slice laser chamber length.Further, this optical thickness difference scope is 0-0.1mm.First micro-slice laser and second micro-slice laser are single integral body by optical cement, gummed or in-depth optical cement.
Realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long can be:
Embodiment one: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser that satisfies described required thickness difference.First substrate and second substrate by different-thickness are made first micro-slice laser and second micro-slice laser.
Embodiment two: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser of suitable thickness, the substrate of first micro-slice laser and the second micro-slice laser substrate plate the different-thickness optical cement film, and it is poor that thickness satisfies described required thickness.
Embodiment three: utilize the substrate and the second micro-slice laser substrate of first micro-slice laser of the identical angle of wedge of optics processing, the second micro-slice laser substrate symmetry of the substrate of first micro-slice laser and turned upside down is placed.
Embodiment four: be provided with respectively the first optical parallel plain film and the second optical parallel plain film in etc. the first long etalon of chamber chip laser and first etalon chip laser that declines that declines, regulate the first optical parallel plain film and the second optical parallel plain film, it is poor to make the long difference in both chambeies satisfy described optical thickness.
Further, regulating the method for exporting the optical frequency rate variance is to regulate described pump light source power.The method of perhaps regulating output optical frequency rate variance also can be at first micro-slice laser and second micro-slice laser electrooptic crystal to be set respectively, changes and regulates the electrooptic crystal voltage difference.
For embodiment four, the method for regulating output optical frequency rate variance is to regulate the first optical parallel plain film and the second optical parallel plain film differential seat angle.
Because of the present invention proposes a kind of method of new realization dual-frequency output laser, so can obtain undersized two-frequency laser.
Description of drawings
Fig. 1 is embodiments of the invention one and embodiment two structure charts;
Fig. 2 is the structure chart that the present invention adds frequency-doubling crystal;
Fig. 3 is the structure chart that the present invention adds electrooptic crystal;
Fig. 4 is the structure chart of embodiments of the invention three;
Fig. 5 is the structure chart of embodiments of the invention four.
Embodiment
The present invention is further described for existing accompanying drawings.
The method of realization dual-frequency output laser of the present invention is by pump light source pumping first micro-slice laser and second micro-slice laser; Make described first micro-slice laser chamber length have optical thickness poor with the second micro-slice laser chamber length.Further, this optical thickness difference scope is 0-0.1mm.First micro-slice laser and second micro-slice laser are single integral body by optical cement, gummed or in-depth optical cement.
Its principle is to adopt the single longitudinal mode laser in microchip of two groups of same laser gain medias, and its micro-slice laser optical thickness has minute differences, and two micro-slice lasers are single integral body by optical cement, gummed or in-depth optical cement.Adopt the compound micro-slice laser of same pumping source pumping.Because two groups of micro-slice laser thickness have minute differences, by Δ υ=2C/2L as can be known, the frequency interval of micro-slice laser will produce minute differences, so two micro-slice lasers will produce small frequency difference during starting of oscillation, thereby obtain wavelength the output of minute differences dual wavelength is arranged, because microplate is same integral body, so in the outer amount condition of uniform temp, during variations in temperature, two micro-slice laser frequency differences will remain unchanged substantially, thereby acquisition has the laser of the dual wavelength output of stabilized frequency difference.
Realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long can be:
Embodiment one: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser that satisfies described required thickness difference.First substrate and second substrate by different-thickness are made first micro-slice laser and second micro-slice laser.
Embodiment two: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser of suitable thickness, the substrate of first micro-slice laser and the second micro-slice laser substrate plate the different-thickness optical cement film, and it is poor that thickness satisfies described required thickness.
As shown in Figure 1, the independent separately microchip single longitudinal mode laser of 101,102 difference, second micro-slice laser, 102 thickness are L, and first micro-slice laser, 101 thickness are L+ δ L, and 103 is the pump light source of semiconductor pump laser, and 104 is optical coupling system.
Among Fig. 2, two groups of microplates constitute intracavity frequency doubling light output laser by gain medium and frequency-doubling crystal.101,102 is gain medium, and 201,202 is frequency-doubling crystal.
Embodiment three: utilize the substrate and the second micro-slice laser substrate of first micro-slice laser of the identical small angle of wedge of optics processing, the second micro-slice laser substrate symmetry of the substrate of first micro-slice laser and turned upside down is placed.As 501,502 being divided into the micro-slice laser that the angle of wedge is δ θ among Fig. 4, δ θ is little to produce the laser parallel leeway to microplate, and L1, L2 are that pump light enters 301,302 thickness from C point, obvious pumping point C between A, B when mobile L1-L2 can change.Can move by pumping point like this and change between the double frequency.
Embodiment four: be provided with respectively the first optical parallel plain film and the second optical parallel plain film in etc. the first long etalon of chamber chip laser and first etalon chip laser that declines that declines, regulate the first optical parallel plain film and the second optical parallel plain film, it is poor to make the long difference in both chambeies satisfy described optical thickness.As shown in Figure 5,601,701,801, the 901 formation etalon formulas that decline swash chip laser; 602,702,802,902 are another sheet etalon chip laser that declines.Wherein 601,602 is first gain medium and second gain medium, first frequency-doubling crystal and second frequency-doubling crystal and other first and second optical elements composite members, 801,802 is first laser mirror and second laser mirror, 701,702 is the etalon bracing frame, 901,902 is the parallel plain film first optical parallel plain film of ultra thin optical and the second optical parallel plain film, the chamber of fine adjustment first optical parallel plain film and fine-tuning two micro-slice lasers of the second optical parallel plain film angle is long, thereby makes the micro-slice laser difference on the frequency adjustable.
Further, regulating the method for exporting the optical frequency rate variance is to regulate described pump light source power.Can change the distribution of two micro-slice laser internal temperature fields because the pumping light intensity changes, thereby change the long difference in chamber of two micro-slice lasers.
The method of perhaps regulating output optical frequency rate variance also can be at first micro-slice laser and second micro-slice laser electrooptic crystal to be set respectively, changes and regulates the electrooptic crystal voltage difference.As shown in Figure 3,101,102 expression gain mediums, 401,402 expression polishing crystal or electrooptic crystals, 301,302 is other optical element, 4011,4021 expression electrodes.Can realize the adjustability of two-laser frequency-splitting by electrooptic crystal by the long difference in pressurizing altered two micro-slice laser chambeies like this.Perhaps also can adopt other acousto-optic tunable or thermal tuning to change the long difference in two micro-slice laser chambeies.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present invention that do not break away from appended claims and limited; can make various variations to the present invention in the form and details, be protection scope of the present invention.
Claims (10)
1. a method that realizes dual-frequency output laser is characterized in that: by pump light source pumping first micro-slice laser and second micro-slice laser; Make described first micro-slice laser chamber length have optical thickness poor with the second micro-slice laser chamber length.
2. the method for realization dual-frequency output laser as claimed in claim 1 is characterized in that: described optical thickness difference is 0-0.1mm.
3. the method for realization dual-frequency output laser as claimed in claim 1 is characterized in that: first micro-slice laser and second micro-slice laser are single integral body by optical cement, gummed or in-depth optical cement.
4. the method for realization laser double frequency output as claimed in claim 1 or 2 is characterized in that: realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long is: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser that satisfies described required thickness difference.
5. the method for realization laser double frequency output as claimed in claim 1 or 2, it is characterized in that: realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long is: utilize optics processing to have the substrate and the second micro-slice laser substrate of first micro-slice laser of suitable thickness, the substrate of first micro-slice laser and second micro-slice laser substrate plating different-thickness optical cement film, it is poor that thickness satisfies described required thickness.
6. the method for realization laser double frequency output as claimed in claim 1 or 2, it is characterized in that: realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long is: utilize the substrate and the second micro-slice laser substrate of first micro-slice laser of the identical angle of wedge of optics processing, the second micro-slice laser substrate symmetry of the substrate of first micro-slice laser and turned upside down is placed.
7. the method for realization laser double frequency output as claimed in claim 1 or 2, it is characterized in that: realize that the first micro-slice laser chamber is long and the method for the optical thickness difference that the second micro-slice laser chamber is long is: the first optical parallel plain film and the second optical parallel plain film are set respectively in waiting the first long etalon of chamber chip laser and first etalon chip laser that declines that declines, regulate the first optical parallel plain film and the second optical parallel plain film, it is poor to make the long difference in both chambeies satisfy described optical thickness.
8. the method for the described realization dual-frequency output laser of as above arbitrary claim is characterized in that: the method for regulating output optical frequency rate variance is: regulate described pump light source power.
9. the method for the described realization dual-frequency output laser of as above arbitrary claim, it is characterized in that: the method for regulating output optical frequency rate variance is: at first micro-slice laser and second micro-slice laser electrooptic crystal is set respectively, changes and regulate the electrooptic crystal voltage difference.
10. the method for realization dual-frequency output laser as claimed in claim 7 is characterized in that: the method for regulating output optical frequency rate variance is: regulate the first optical parallel plain film and the second optical parallel plain film differential seat angle.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013621A (en) * | 2010-11-18 | 2011-04-13 | 福州高意通讯有限公司 | Tunable dual-frequency laser |
| CN102013622A (en) * | 2010-11-18 | 2011-04-13 | 福州高意通讯有限公司 | Single longitudinal mode microchip laser with adjustable frequency |
| CN103227407A (en) * | 2013-04-19 | 2013-07-31 | 杭州电子科技大学 | Double-frequency microchip laser device based on adjustable frequency difference |
| CN103823300A (en) * | 2012-11-16 | 2014-05-28 | 福州高意光学有限公司 | Double-cavity etalon structure |
| CN105470793A (en) * | 2015-12-29 | 2016-04-06 | 哈尔滨工业大学 | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal |
| CN106471685A (en) * | 2014-01-24 | 2017-03-01 | 加州理工学院 | Double frequency light source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4956843A (en) * | 1989-10-10 | 1990-09-11 | Amoco Corporation | Simultaneous generation of laser radiation at two different frequencies |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013621A (en) * | 2010-11-18 | 2011-04-13 | 福州高意通讯有限公司 | Tunable dual-frequency laser |
| CN102013622A (en) * | 2010-11-18 | 2011-04-13 | 福州高意通讯有限公司 | Single longitudinal mode microchip laser with adjustable frequency |
| CN102013621B (en) * | 2010-11-18 | 2014-10-08 | 福州高意通讯有限公司 | Tunable dual-frequency laser |
| CN102013622B (en) * | 2010-11-18 | 2016-01-13 | 福州高意通讯有限公司 | A kind of single longitudinal mode laser in microchip of frequency-adjustable |
| CN103823300A (en) * | 2012-11-16 | 2014-05-28 | 福州高意光学有限公司 | Double-cavity etalon structure |
| CN103823300B (en) * | 2012-11-16 | 2016-01-27 | 福州高意光学有限公司 | A kind of double-cavity etalon structure |
| CN103227407A (en) * | 2013-04-19 | 2013-07-31 | 杭州电子科技大学 | Double-frequency microchip laser device based on adjustable frequency difference |
| CN106471685A (en) * | 2014-01-24 | 2017-03-01 | 加州理工学院 | Double frequency light source |
| CN106471685B (en) * | 2014-01-24 | 2019-07-09 | 加州理工学院 | Double frequency light source |
| CN105470793A (en) * | 2015-12-29 | 2016-04-06 | 哈尔滨工业大学 | Device and method for achieving stable dual-frequency laser output by using etalon and electro-optical crystal |
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| CN101355227B (en) | 2012-04-18 |
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Effective date of registration: 20170929 Address after: Jinan District Fuk new road 350000 Fuzhou city of Fujian province No. 253 CATIC industrial district Patentee after: Fuzhou Photop Technologies Inc. Address before: No. 39 Fuxing Road, Jinan District, Fuzhou city of Fujian Province in 350014 Patentee before: Photop Technologies, Inc. |
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