CN101997037B - Semiconductor structure and manufacturing method thereof - Google Patents
Semiconductor structure and manufacturing method thereof Download PDFInfo
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- CN101997037B CN101997037B CN 201010293471 CN201010293471A CN101997037B CN 101997037 B CN101997037 B CN 101997037B CN 201010293471 CN201010293471 CN 201010293471 CN 201010293471 A CN201010293471 A CN 201010293471A CN 101997037 B CN101997037 B CN 101997037B
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
Abstract
The invention relates to a semiconductor structure and a manufacturing method thereof. The method comprises the step of forming a grid electrode, a source electrode and a drain electrode on a substrate, and respectively forming an oxide semiconductor material between the grid electrode and the drain electrode and between the source electrode and the drain electrode, wherein a method for forming the oxide semiconductor materials comprises the following steps of: depositing, and introducing nitrogen in the deposition process before the deposition process is ended so as to form oxide semiconductor nitrides above the oxide semiconductor materials.
Description
[technical field]
The invention relates to a kind of semiconductor structure, and particularly relevant for a kind of thin-film transistor with oxide semiconductor material.
[background technology]
Recently environmental consciousness comes back, and the two-d display panel (flat display panels) with advantageous characteristic such as low consumpting power, space utilization efficient are good, radiationless, high image quality has become the market mainstream.Common flat-panel screens comprises LCD (liquid crystal displays), plasma scope (plasma displays), organic electro-luminescent display (electroluminescentdisplays) etc.LCD to popularize the most at present is an example, and it mainly is to be made up of plurality of groups of substrates of thin-film transistor, colored optical filtering substrates and the liquid crystal layer that is sandwiched between the two.On existing plurality of groups of substrates of thin-film transistor, adopt amorphous silicon (a-Si) thin-film transistor or low-temperature polysilicon film transistor changeover module as each sub-picture element more.In recent years; Existing research points out that oxide semiconductor (oxidesemiconductor) thin-film transistor is compared to amorphous silicon film transistor; Has higher carrier mobility (mobility); And oxide semiconductor thin-film transistor then has preferable critical voltage (threat hold voltage, Vth) uniformity compared to low-temperature polysilicon film transistor.Therefore, the potential key component that becomes flat-panel screens of future generation of oxide semiconductor thin-film transistor.
Yet oxide semiconductor material receives the influence of aqueous vapor and oxygen easily among atmospheric environment, and make oxide semiconductor material itself electrically along with the time drift.Thus, with electrical performance that influences oxide semiconductor thin-film transistor and reliability.
[summary of the invention]
The present invention provides a kind of semiconductor structure, and it can promote the electrical performance and the reliability of oxide semiconductor thin-film transistor.
The present invention proposes a kind of semiconductor structure, and it comprises grid, source electrode, drain electrode, oxide semiconductor material and oxide semiconductor nitride.Oxide semiconductor material is between grid and source electrode and drain electrode.The oxide semiconductor nitride covers above-mentioned oxide semiconductor material.
The present invention proposes a kind of manufacturing approach of semiconductor structure, and this is included in substrate and forms grid, source electrode and drain electrode.In addition; Between grid and source electrode and drain electrode, form oxide semiconductor material; The method that wherein forms oxide semiconductor material comprises carries out the deposition program; And before finishing said deposition program, in the deposition program, feed nitrogen to form the oxide semiconductor nitride in the oxide semiconductor material top.
Based on above-mentioned; Because the present invention forms the oxide semiconductor nitride with the mode of successive sedimentation above oxide semiconductor material; So oxide semiconductor material just can receive the protection of oxide semiconductor nitride, in order to avoid receive oxygen and the influence of aqueous vapor among the atmospheric environment.In other words, the oxide semiconductor nitride can be used as the protective layer of oxide semiconductor material, therefore uses the semiconductor structure of the oxide semiconductor material with said protective layer to have better reliability degree.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended graphic elaborating as follows.
[description of drawings]
Figure 1A to Fig. 1 C is the manufacturing process generalized section of semiconductor structure according to an embodiment of the invention.
Fig. 2 is the drain current of thin-film transistor and the graph of a relation of grid voltage.
Fig. 3 and Fig. 4 are the start voltage and the time relation figure of thin-film transistor.
[primary clustering symbol description]
100: substrate
102: insulating barrier
104,104a: oxide semiconductor material
106,106a: oxide semiconductor nitride
110: insulating barrier
112: pixel electrode
114: contact hole
G: grid
S: source electrode
D: drain electrode
[embodiment]
Figure 1A to Fig. 1 C is the manufacturing process generalized section of semiconductor structure according to an embodiment of the invention.Please, substrate 100 is provided at first with reference to Figure 1A.The material of substrate 100 can be glass, quartz, organic polymer, light tight/reflecting material (for example: electric conducting material, metal, wafer, pottery or other material applicatory) or other material applicatory.According to an embodiment, can on the surface of substrate 100, further form a layer insulating (not illustrating), with as resilient coating.
Then, on substrate 100, form grid G.According to an embodiment, the method that forms grid G for example is to deposit one deck conductive layer (not illustrating) earlier, afterwards again with photoetching and the said conductive layer of etching program patterning, to form grid G.In addition, when forming grid G, also can define the scan line (not illustrating) that electrically connects with grid G simultaneously.Based on considering of conductivity, grid G generally is to use metal material.So, the invention is not restricted to this, according to other embodiment, grid G also can be used other electric conducting material.For example: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or other suitable material) or metal material and other lead the stack layer of material.
Afterwards, on substrate 100, form insulating barrier 102, with cover gate G.At this; Insulating barrier 102 can be described as gate insulator again, and its material (for example: the stack layer of silica, silicon nitride, silicon oxynitride, other suitable material or above-mentioned at least two kinds of materials), organic material or other suitable material or above-mentioned combination comprises inorganic material.
Then, on insulating barrier 102, form oxide semiconductor material 104 and oxide semiconductor nitride 106 continuously.According to present embodiment, oxide semiconductor material 104 and oxide semiconductor nitride 106 are formed with the successive sedimentation program.More detailed; The method that forms above-mentioned oxide semiconductor material 104 and oxide semiconductor nitride 106 is that substrate 100 is moved into deposition chamber; Then carry out the deposition program of oxide semiconductor material, with deposition oxide semi-conducting material 104 on the insulating barrier on the substrate 100 102.And before above-mentioned deposition EP (end of program), in the deposition program, feed nitrogen to form oxide semiconductor nitride 106 in oxide semiconductor material 104 tops.Above-mentioned deposition program can be chemical vapour deposition procedure or physical vapour deposition (PVD) program.
According to one embodiment of the invention, it is that 5 minutes (mins), argon (Ar) flow are 10sccm for 100W, sedimentation time (Depo.Time) that the process parameter of above-mentioned deposition program is exemplified as energy (Power).The flow of the nitrogen that before above-mentioned deposition EP (end of program), is fed in addition, is exemplified as 2sccm.
Because oxide semiconductor nitride 106 mainly is the protective layer as oxide semiconductor material 104, so that oxide semiconductor material 104 avoids being exposed to locating of atmospheric environment.Therefore the thickness of oxide semiconductor nitride 106 reaches oxide semiconductor material 104 covered fully and gets final product.Therefore, the thickness of oxide semiconductor nitride 106 is exemplified as 50nm in the present embodiment, and the thickness of oxide semiconductor material 104 is exemplified as 50nm.According to other embodiment, the thickness of oxide semiconductor nitride 106 also can be the thickness less than oxide semiconductor material 104.
In addition; In the present embodiment, above-mentioned oxide semiconductor material 104 comprise indium oxide gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (ZnO) tin oxide (SnO), indium zinc oxide (Indium-Zinc Oxide; IZO), gallium oxide zinc (Gallium-Zinc Oxide; GZO), zinc-tin oxide (Zinc-Tin Oxide, ZTO) or tin indium oxide (Indium-Tin Oxide, ITO).Above-mentioned oxide semiconductor nitride 106 comprises indium oxide gallium zinc nitride (IGZON), zinc oxide nitride (ZnON), tin oxide nitride (SnON), indium zinc oxide nitride (IZON), gallium oxide zinc nitride (GZON), zinc-tin oxide nitride (ZTON) or tin indium oxide nitride (ITON).What deserves to be mentioned is; Because of the formation method of oxide semiconductor nitride 106 is before the deposition EP (end of program) of oxide semiconductor material 104, to feed nitrogen, so both oxide semiconductors of oxide semiconductor nitride 106 and oxide semiconductor material 104 are identical materials.For example, if oxide semiconductor material 104 comprises indium oxide gallium zinc (IGZO), 106 on oxide semiconductor nitride comprises indium oxide gallium zinc nitride (IGZON) so.
What deserves to be mentioned is; Because oxide semiconductor nitride 106 can carry out in same deposition chamber with oxide semiconductor material 104 for example, so oxide semiconductor nitride 106 can original position (in-situ) deposition program or the formation of successive sedimentation program with oxide semiconductor material 104.And because oxide semiconductor nitride 106 is to form with in-situ deposition program or successive sedimentation program with oxide semiconductor material 104; Just; On substrate 100, form in the process of oxide semiconductor nitride 106 and oxide semiconductor material 104, substrate 100 does not leave deposition chambers fully.Therefore, oxide semiconductor material 104 is understood oxide semiconducting nitride thing 106 coverings always and can be exposed among the atmospheric environment.Just because oxide semiconductor material 104 has the protection of oxide semiconducting nitride thing 106, therefore can make oxide semiconductor material 104 can not receive aqueous vapor and the influence of oxygen in the atmospheric environment, thereby can possess preferable electrical performance.
Afterwards, patterning oxide semiconductor nitride 106 and oxide semiconductor material 104, the oxide semiconductor nitride 106a and the oxide semiconductor material 104a that have island-shaped pattern with formation are shown in Figure 1B.According to present embodiment, patterning oxide semiconductor nitride 106 for example is to adopt photoetching and etching program with the method for oxide semiconductor material 104.Because oxide semiconductor nitride 106 is while patternings with oxide semiconductor material 104, so the oxide semiconductor nitride 106a after the patterning has identical pattern with oxide semiconductor material 104a.
Then, on oxide semiconductor nitride 106a, form source S and drain D.According to an embodiment, the method that forms source S and drain D for example is to deposit one deck conductive layer (not illustrating) earlier, afterwards again with photoetching and the said conductive layer of etching program patterning, to form source S and drain D.In addition, when forming source S and drain D, also can define the data wire (not illustrating) that electrically connects with source S simultaneously.Based on considering of conductivity, source S and drain D generally are to use metal material.So, the invention is not restricted to this, according to other embodiment, source S and drain D also can be used other electric conducting material.For example: the nitrogen oxide of the nitride of alloy, metal material, the oxide of metal material, metal material or other suitable material) or metal material and other lead the stack layer of material.
After the step of above-mentioned Figure 1B, formed semiconductor structure is called thin-film transistor.Said thin-film transistor comprises grid G, source S, drain D, oxide semiconductor material 104a and oxide semiconductor nitride 106a.Oxide semiconductor material 104a is between grid G and source S and drain D.Oxide semiconductor nitride 106a covers above-mentioned oxide semiconductor material 104a.According to one embodiment of the invention, on grid G, more be coated with insulating barrier 102.
In above-mentioned thin-film transistor, oxide semiconductor material 104a is the active layers as thin-film transistor, and oxide semiconductor nitride 106a is the protective layer as oxide semiconductor material 104a.Because oxide semiconductor material 104a receives the protection of oxide semiconductor nitride 106a, therefore oxide semiconductor material 104a can be exposed among the atmospheric environment, make oxide semiconductor material 104a can keep the excellent electrical property performance.
Above-mentioned thin-film transistor can be used as the switch module of any electronic installation.For instance, above-mentioned thin-film transistor can be used as the switch module of the image element structure in the display, explains as follows.
Please, after accomplishing above-mentioned thin-film transistor, can further on substrate 100, form insulating barrier 110, transistorized source S of its cover film and drain D with reference to Fig. 1 C.The material of insulating barrier 110 (for example: the stack layer of silica, silicon nitride, silicon oxynitride, other suitable material or above-mentioned at least two kinds of materials), organic material (for example: polyesters (PET), polyalkenes, gather the third vinegar class, polycarbonate-based, polyalkylene oxide class, polyphenyl alkene class, polyethers, polyketone class, polyalcohols, polyacetals class or other suitable material or above-mentioned combination) or other suitable material or above-mentioned combination comprises inorganic material.
Afterwards, in insulating barrier 110, form contact window 114, expose drain D.The method that forms contact window 114 for example is to adopt lithographic procedures or photoetching and etching program.
Then, on insulating barrier 110, form pixel electrode 112, pixel electrode 112 sees through contact window 114 and electrically connects with drain D.Pixel electrode 112 can be and penetrates pixel electrode, reflection pixel electrode or semi-penetration semi-reflective pixel electrode.The material that penetrates pixel electrode comprises metal oxide, for example is indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc oxide, indium germanium zinc oxide or other suitable oxide or the above-mentioned stack layer of the two at least.The material of reflection pixel electrode comprises the metal material of high reflectance.
In the present embodiment, each assembly processing procedure relevant parameter is following, but non-in order to limitation the present invention:
| IGZO |
| Pre-sputter?5min |
| sputter?3.25min |
| Thickness 50nm |
| Power?DC?100W |
| Ar flow 10sccm |
| IGZON |
| Pre-sputter?5min |
| sputter?5.25min |
| Thickness 50nm |
| Power?DC?100W |
| Ar flow 10sccm |
| N2 flow 2sccm |
After the step of above-mentioned Fig. 1 C, formed semiconductor structure is called image element structure, and it comprises thin-film transistor and pixel electrode 112.Thin-film transistor comprises grid G, source S, drain D, oxide semiconductor material 104a and oxide semiconductor nitride 106a.Oxide semiconductor material 104a is between grid G and source S and drain D.Oxide semiconductor nitride 106a covers above-mentioned oxide semiconductor material 104a.Pixel electrode 112 electrically connects with drain D.According to one embodiment of the invention, on grid G, more be coated with insulating barrier 102.Between pixel electrode 112 and thin-film transistor, more be provided with insulating barrier 110.In the present embodiment, be to electrically connect between pixel electrode 112 and the drain D through contact window 114.
Hold the above; Because the thin-film transistor of above-mentioned image element structure is as active layers with oxide semiconductor material 104a; And oxide semiconductor material 104a receives the protection of oxide semiconductor nitride 106a, makes oxide semiconductor material 104a can not be exposed among the atmospheric environment.Therefore, the thin-film transistor that has oxide semiconductor material 104a and an oxide semiconductor nitride 106a has the excellent electrical property performance.So, also therefore has better reliability degree with said thin-film transistor as the image element structure of switch module.
The thin-film transistor of the foregoing description is to be example with the bottom grid film transistor, so the invention is not restricted to this.According to other embodiment, of the present inventionly also can be applied to the top grid type thin-film transistor as active layers and with oxide semiconductor nitride 106a as the structure of protective layer with oxide semiconductor material 104a.
Fig. 2 is the drain current of thin-film transistor and the graph of a relation of grid voltage.Please with reference to Fig. 2, transverse axis is represented grid voltage, and the longitudinal axis is represented drain current.Curve 202 expression has drain current and the relation curve of grid voltage of the thin-film transistor of IGZO active layers and IGZON protective layer, in other words, is coated with the IGZON protective layer on the IGZO active layers of this thin-film transistor.Curve 204 expression has drain current and the relation curve of grid voltage of the thin-film transistor of IGZO active layers, in other words, does not have the protection of IGZON on the IGZO active layers of this thin-film transistor.
Can know that by Fig. 2 the thin-film transistor (curve 202) with IGZO active layers and IGZON protective layer promptly has higher drain current compared to the thin-film transistor that only has the IGZO active layers (curve 204) in lower grid voltage condition.Therefore the thin-film transistor of the provable IGZO of having active layers and IGZON protective layer has preferable electrical performance.
Fig. 3 and Fig. 4 are the start voltages (or claiming starting voltage) and time relation figure of thin-film transistor.In Fig. 3 and Fig. 4, the transverse axis express time, the longitudinal axis is represented start voltage.In addition, Fig. 3 is start voltage and the time relation curve that shows the thin-film transistor with IGZO active layers, in other words, does not have the protection of IGZON on the IGZO active layers of this thin-film transistor.Fig. 4 shows the drain current of the thin-film transistor with IGZO active layers and IGZON protective layer and the relation curve of grid voltage, in other words, is coated with the IGZON protective layer on the IGZO active layers of this thin-film transistor.
Can find out significantly that by Fig. 3 and Fig. 4 the stability and the uniformity of the start voltage of the thin-film transistor of Fig. 3 are relatively poor.The stability and the uniformity of the start voltage of the thin-film transistor of Fig. 4 are preferable.Provable thus, the thin-film transistor (Fig. 4) with IGZO active layers and IGZON protective layer has preferable electrical performance.
In sum; Because the present invention forms the oxide semiconductor nitride with the mode of successive sedimentation above oxide semiconductor material; So oxide semiconductor material just can receive the protection of oxide semiconductor nitride, in order to avoid receive oxygen and the influence of aqueous vapor among the atmospheric environment.In other words, because oxide semiconductor material has the protection of oxide semiconductor nitride, therefore can make oxide semiconductor material possess preferable electrical performance and reliability.Thereby, use the thin-film transistor and/or the image element structure of oxide semiconductor material to have better reliability degree with said protective layer.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when doing a little change and retouching, so protection scope of the present invention is as the criterion when looking accompanying the claim person of defining.
Claims (4)
1. the manufacturing approach of a semiconductor structure comprises:
On a substrate, form a grid, one source pole and a drain electrode; And
Between this grid and this source electrode and drain electrode, form the monoxide semi-conducting material,
The method that wherein forms this oxide semiconductor material comprises carries out a deposition program, and finish should the deposition program before, in this deposition program, feed nitrogen to form monoxide semiconducting nitride thing in this oxide semiconductor material top.
2. the manufacturing approach of semiconductor structure according to claim 1; It is characterized in that; The flow of the nitrogen that is fed in this deposition program is 2sccm, and wherein the thickness of this oxide semiconductor nitride is 50nm, and the thickness of this oxide semiconductor material is 50nm.
3. the manufacturing approach of semiconductor structure according to claim 1; It is characterized in that; This oxide semiconductor material comprises indium oxide gallium zinc (Indium-Gallium-Zinc Oxide; IGZO), zinc oxide (ZnO) tin oxide (SnO), indium zinc oxide (Indium-Zinc Oxide; IZO), gallium oxide zinc (Gallium-Zinc Oxide, GZO), zinc-tin oxide (Zinc-Tin Oxide, ZTO) or tin indium oxide (Indium-Tin Oxide; ITO), and wherein this oxide semiconductor nitride comprises indium oxide gallium zinc nitride (IGZON), zinc oxide nitride (ZnON), tin oxide nitride (SnON), indium zinc oxide nitride (IZON), gallium oxide zinc nitride (GZON), zinc-tin oxide nitride (ZTON) or tin indium oxide nitride (ITON).
4. the manufacturing approach of semiconductor structure according to claim 1 is characterized in that, more comprises forming a pixel electrode, and itself and this drain electrode electrically connects.
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| CN104241393A (en) * | 2014-08-27 | 2014-12-24 | 北京大学 | Thin film transistor and manufacturing method thereof |
| CN105304723A (en) * | 2015-09-30 | 2016-02-03 | 京东方科技集团股份有限公司 | Film transistor, array substrate, manufacturing method and display device |
| CN106384768B (en) * | 2016-11-18 | 2019-04-16 | Tcl集团股份有限公司 | A kind of ZnON, QLED device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1402307A (en) * | 2002-01-28 | 2003-03-12 | 联华电子股份有限公司 | Method for mfg. gate dielectric layer |
| CN1906527A (en) * | 2003-11-14 | 2007-01-31 | 株式会社半导体能源研究所 | Display device and manufacturing method of the same |
| CN101393861A (en) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Gate dielectric layer forming method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402307A (en) * | 2002-01-28 | 2003-03-12 | 联华电子股份有限公司 | Method for mfg. gate dielectric layer |
| CN1906527A (en) * | 2003-11-14 | 2007-01-31 | 株式会社半导体能源研究所 | Display device and manufacturing method of the same |
| CN101393861A (en) * | 2007-09-20 | 2009-03-25 | 中芯国际集成电路制造(上海)有限公司 | Gate dielectric layer forming method |
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