CN101989588A - Electrical connecting structure used for packaging substrate and packaging structure thereof - Google Patents
Electrical connecting structure used for packaging substrate and packaging structure thereof Download PDFInfo
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- CN101989588A CN101989588A CN 200910165565 CN200910165565A CN101989588A CN 101989588 A CN101989588 A CN 101989588A CN 200910165565 CN200910165565 CN 200910165565 CN 200910165565 A CN200910165565 A CN 200910165565A CN 101989588 A CN101989588 A CN 101989588A
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- packaging
- projection
- base plate
- electric connection
- connection structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Abstract
The invention provides an electrical connecting structure used for packaging substrate and a packaging structure thereof. The electrical connecting structure used for packaging substrate comprises a plurality of first electrical contact pads arranged on the packaging substrate, the first electrical contact pad is provided with the electrical connecting structure, the electrical connecting structure is provided with a metal buffer layer on the first electrical contact pad, and the metal buffer layer is made by soldering tin, besides, the metal buffer layer is provided with a convex column. Thus, a little displacement is provided for the substrate in reflowing by virtue of the metal buffer layer, so as to release stress, so that the defect caused by stress produced by deviation of the convex column is overcome. The invention also provides a packaging structure.
Description
Technical field
The present invention relates to a kind of semiconductor structure, refer to a kind of electric connection structure and encapsulating structure of base plate for packaging especially.
Background technology
Flourish along with electronic industry, electronic product also marches toward multi-functional, high performance R﹠D direction gradually.Base plate for packaging in order to the bearing semiconductor wafer includes routing type base plate for packaging, wafer size encapsulation (CSP) substrate and covers brilliant substrate (FCBGA) etc. at present; And be in response to microprocessor, wafer set, with the computing needs of drawing wafer, the base plate for packaging that is furnished with circuit also need promote the quality of its transmission wafer signal, improve functions such as frequency range, control group, to adapt to the development that high I/O counts packaging part.
In existing encapsulation technology, be semiconductor wafer electrically to be connect put on base plate for packaging, dispose electronic pads (electronic pad) on the surface of this semiconductor integrated circuit (IC) wafer, and this base plate for packaging has corresponding electric contact mat, and between this semiconductor wafer and base plate for packaging, conductive projection, other conductive adhesive materials can be set suitably, this semiconductor wafer is electrically connected on this base plate for packaging.
See also Figure 1A, be the cross-sectional schematic of existing composite packing structure; As shown in the figure, base plate for packaging 10 is provided, this base plate for packaging 10 has first surface 10a and second surface 10b, on this first surface 10a, be provided with a plurality of first electric contact mats 101, and on this second surface 10b, be provided with a plurality of second electric contact mats 102, on this second surface 10b, connect and be equipped with semiconductor wafer 11, on described second electric contact mat 102, form solder bump 12 respectively, and a surface of this semiconductor wafer 11 has a plurality of relatively respectively electronic padses 110 of this solder bump 12, and respectively forming conductive projection 13 on this electronic pads 110, make the conductive projection 13 of this semiconductor wafer 11 be electrically connected to the solder bump 12 of this base plate for packaging 10, and between this semiconductor wafer 11 and base plate for packaging 10, inserted underfill material 14, thereby to form encapsulating structure 1; And on described first electric contact mat 101 of this first surface 10a, be formed with tin ball 15 respectively, thereby in order to be electrically connected to printed circuit board (PCB) (PCB) 2, and a surface of this printed circuit board (PCB) 2 has respectively the 3rd electric contact mat 21 of this first electric contact mat 101 of a plurality of correspondences, make described tin ball 15 correspondences be electrically connected to respectively the 3rd electric contact mat 21, thereby this encapsulating structure 1 is electrically connected on this printed circuit board (PCB) 2.
But, the tin ball 15 of described encapsulating structure 1 is formed on first electric contact mat 101 of high-density wiring and thin space layout, to cause the spacing between the described tin ball 15 too small, and when 15 pairs in described tin ball should printed circuit board (PCB) 2 the 3rd electric contact mat 21 and through reflow handle with form electrically connect after, cause easily to form bridge joint between the described tin ball 15 and cause short circuit.
For avoiding described problem to take place, industry proposes a kind of package substrate construction then, see also Figure 1B, respectively be provided with corresponding projection 16 on described first electric contact mat 101 for existing encapsulating structure 1, and on this projection 16, be formed with soldering tin material 17, make described soldering tin material 17 correspondences be electrically connected to respectively the 3rd electric contact mat 21, thereby this encapsulating structure 1 is electrically connected on this printed circuit board (PCB) 2.
Yet, in described two kinds of prior aries, described tin ball 15 or projection 16 correspondences with soldering tin material 17 connect puts on first electric contact mat 101 of this encapsulating structure 1 respectively, when described tin ball 15 or projection 16 correspondences with soldering tin material 17 connect when putting at this printed circuit board (PCB) 2, because the 3rd electric contact mat 21 on the printed circuit board (PCB) 2 is laid closely, and the welding resisting layer perforate that is formed on the 3rd electric contact mat 21 is narrow, cause a large amount of these tin balls 15 or have soldering tin material 17 projection 16 the center and fully correspondence connect the 3rd electric contact mat 21 centres of putting at this printed circuit board (PCB) 2, and the situation of a little skew is arranged, so handle and after reaching electric connection through reflow, described tin ball 15 or the projection 16 with soldering tin material 17 are put in the 3rd electric contact mat 21 centres because of fully accurately not connecing, cause between described tin ball 15 and the 3rd electric contact mat 21, or have between the projection 16 of soldering tin material 17 and the 3rd electric contact mat 21 and can produce stress, and then may cause between this tin ball 15 and first electric contact mat 101, maybe this has between the projection 16 and first electric contact mat 101 of soldering tin material 17, or between this tin ball 15 and the 3rd electric contact mat 21, or the interface between this soldering tin material 17 and the 3rd electric contact mat 21 is easy to generate fracture situation about peeling off, thereby influence electrically connects.
Therefore, how a kind of base plate for packaging and encapsulating structure are provided, to avoid in the prior art, in the thin space layout of high-density wiring, cause easily because of the tin sphere gap is too small form between the tin ball bridge joint cause short circuit, and this tin ball or metal projection put the stress that is produced in the 3rd electric contact mat centre because of failing fully accurately to connect, and causing between this tin ball or metal projection and the electric contact mat producing the shortcoming that fracture is peeled off, real having become demanded the problem that overcomes at present urgently.
Summary of the invention
Shortcoming in view of described prior art, main purpose of the present invention provides a kind of electric connection structure and encapsulating structure of base plate for packaging, can avoid in the reflow processing, produce off normal stress between the described electric connection structure, and after avoiding that, tin ball too small because of the tin sphere gap is excessive and causing reflow to handle, bridge joint problem of short-circuit between the tin ball.
For reaching described and other purposes, the invention provides a kind of electric connection structure of base plate for packaging, on this base plate for packaging, be provided with a plurality of first electric contact mats, on this first electric contact mat, be provided with this electric connection structure, by this electric connection structure to be electrically connected to printed circuit board (PCB) or encapsulating structure, this electric connection structure comprises: a plurality of metal buffer layers, correspondence are located at respectively on this first electric contact mat, and the material that forms this metal buffer layer is a soldering tin material; And a plurality of projections, correspondence is located at respectively on this metal buffer layer, and the fusing point of this projection is higher than this metal buffer layer.
The present invention also provides a kind of encapsulating structure, comprising: base plate for packaging, have first surface and second surface, and on this first surface, be provided with a plurality of first electric contact mats, on this second surface, be provided with a plurality of second electric contact mats; Semiconductor wafer electrically connects described second electric contact mat; A plurality of metal buffer layers, correspondence are located at respectively on this first electric contact mat, and the material that forms this metal buffer layer is a soldering tin material; And a plurality of projections, correspondence is located at respectively on this metal buffer layer, and the fusing point of this projection is higher than this metal buffer layer.
According to described encapsulating structure, this semiconductor wafer electrically connects described second electric contact mat with wire bond structure or flip chip structure.
According to the electric connection structure and the encapsulating structure of described base plate for packaging, the material that forms this soldering tin material is tin (Sn), silver (Ag), copper (Cu), zinc (Zn) or indium (In); The material that forms this projection is aluminium (Al), copper (Cu) or nickel (Ni).
According to the above structure, also can between this metal buffer layer and first electric contact mat, form barrier layer again, and the material that forms this barrier layer is nickel (Ni).
According to the above, also can on this projection, form soldering tin material again; Or on the exposed surface of this projection, form surface-treated layer, and the material that forms this surface-treated layer is electronickelling/gold, chemical nickel plating/gold, changes nickel and soak gold (ENIG), change the nickel palladium and soak gold (ENEPIG), chemical plating stannum (Immersion Tin), chemical silvering or electrotinning.
According to the above, on the first surface of this base plate for packaging, form insulating protective layer, and expose described projection, and can on the projection surface of exposing, form this surface-treated layer again; Or this insulating protective layer and be formed on described projection side, and expose the end face of described projection.
In addition according to the above, at the end face formation soldering tin material of this projection.
The electric connection structure of base plate for packaging of the present invention and encapsulating structure, the main metal buffer layer that on first electric contact mat of this base plate for packaging, forms low-melting-point metal, on this metal buffer layer, form the projection of refractory metal again, to pass through this metal buffer layer, in reflow is handled than this projection elder generation fusion, thereby make this projection in reflow is handled, can provide resilient bias by this elder generation's melt metal resilient coating, so that described projection is avoided the stress that produces because of off normal in the cooling procedure of described metal buffer layer, and described projection can present after unlike existing tin ball warp reflow spherical, and cause the pitch smaller between tin ball and tin ball to produce the bridge joint problem of short-circuit, and then can avoid having now the shortcoming that is produced.
Description of drawings
Figure 1A and 1B are the cross-sectional schematic of existing package substrate construction;
Fig. 2 A and 2B are the first embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention;
Fig. 3 A and 3B are the second embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention;
Fig. 4 A and 4B are the 3rd embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention;
Fig. 5 A and 5B are the 4th embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention;
Fig. 6 A and 6B are the 5th embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention;
Fig. 7 A and 7B are the 6th embodiment cross-sectional schematic of the electric connection structure of base plate for packaging of the present invention; And
Fig. 8 A to 8C is for encapsulating structure of the present invention and connect the cross-sectional schematic of putting at printed circuit board (PCB) or another encapsulating structure.
The main element symbol description
1,3,3 ' encapsulating structure
10,31 base plate for packaging
10a, 31a first surface
10b, 31b, 31b ' second surface
101,311 first electric contact mats
102,312 second electric contact mats
11,38 semiconductor wafers
110 electronic padses
12 solder bumps
13 conductive projections
14 underfill materials
15 tin balls
16,33 projections
2,4 printed circuit board (PCB)s
21,41,313 the 3rd electric contact mats
32 metal buffer layers
34 barrier layers
35,17 soldering tin materials
36 surface-treated layers
37 insulating protective layers
39 flip chip structures
Embodiment
Below by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the content that this specification disclosed.
See also Fig. 2 A to 7B, be the schematic diagram of the electric connection structure of base plate for packaging of the present invention.
[first embodiment]
See also Fig. 2 A, the electric connection structure of base plate for packaging of the present invention includes base plate for packaging 31, a plurality of metal buffer layer 32, reaches a plurality of projections 33.
A plurality of conducting wires reach described base plate for packaging 31 and the conductive through hole of its electric connection or conductive blind hole (expression in graphic) for inside has, to form the treatment technology of conducting wire, conductive through hole and conductive blind hole various and about base plate for packaging, but this be industry known treatment technology, its non-this case technical characterictic is not given unnecessary details so give again; On this base plate for packaging 31 and be provided with a plurality of first electric contact mats 311, this first electric contact mat 311 is ball pad or post pad, establishes conducting element and is electrically connected to printed circuit board (PCB) or another encapsulating structure for connecing.
Described metal buffer layer 32, correspondence is located at respectively on this first electric contact mat 311, and the material that forms this metal buffer layer 32 is the soldering tin material of low-melting-point metal, and the material of this soldering tin material is tin (Sn), silver (Ag), copper (Cu), zinc (Zn) or indium (In).
Described a plurality of projection 33, correspondence is located at respectively on this metal buffer layer 32, and the fusing point of this projection 33 is higher than this metal buffer layer 32, and the material that forms this projection 33 is a refractory metal, and the material of this refractory metal is aluminium (Al), copper (Cu) or nickel (Ni).
See also Fig. 2 B, according to described structure, also can be included in formation barrier layer 34 between this metal buffer layer 32 and first electric contact mat 311, and the material that forms this barrier layer 34 is nickel (Ni).
[second embodiment]
See also Fig. 3 A and 3B, on this projection 33, form soldering tin material 35 with different being in of last embodiment.
[the 3rd embodiment]
See also Fig. 4 A and 4B, be in described embodiment different and on the exposed surface of this projection 33, form surface-treated layer 36, and the material that forms this surface-treated layer 36 to be electronickelling/gold, chemical nickel plating/gold, change nickel soak gold (ENIG), change nickel palladium soaks gold (ENEPIG), chemical plating stannum (Immersion Tin), chemical silvering or electrotinning.
[the 4th embodiment]
See also Fig. 5 A and 5B, go up formation insulating protective layer 37 with different being in of described embodiment, and expose described projection 33 in the first surface 31a of this base plate for packaging 31; And this surface-treated layer 36 can be formed, shown in Fig. 5 A on projection 33 surfaces of exposing.
[the 5th embodiment]
See also Fig. 6 A and 6B, also can be formed on described projection 33 sides with different being in of described the 4th embodiment, and expose the end face of described projection 33 in this insulating protective layer 37.
[the 6th embodiment]
See also Fig. 7 A and 7B, form soldering tin material 35 with different being in of described the 5th embodiment in the end face of this projection 33.
The electric connection structure of base plate for packaging of the present invention, respectively this first electric contact mat at this base plate for packaging forms the metal buffer layer, and on this metal buffer layer, form projection, metal buffer layer by this low-melting-point metal, in reflow is handled than the projection elder generation fusion of this refractory metal, thereby make this projection in reflow is handled, can provide resilient bias by this elder generation's melt metal resilient coating, so that described projection is avoided the stress that produces because of off normal in the cooling procedure of described metal buffer layer, and described projection can present after unlike existing tin ball warp reflow spherical, and cause the pitch smaller between tin ball and tin ball to produce the bridge joint problem of short-circuit, and then can avoid the disappearance that electric connection structure produced described in the prior art.
See also Fig. 8 A, the present invention also provides a kind of encapsulating structure 3, comprising: base plate for packaging 31, semiconductor wafer 38, a plurality of metal buffer layer 32, and a plurality of projections 33.
Described base plate for packaging 31, have first surface 31a and second surface 31b, on this first surface 31a, be provided with a plurality of first electric contact mats 311, on this second surface 31b, be provided with a plurality of second electric contact mats 312, and this second electric contact mat 312 can be wire pad or put brilliant pad.
Described semiconductor wafer 38 electrically connects described second electric contact mat 312 with wire bond structure (not expression in graphic) or flip chip structure 39.
Described metal buffer layer 32, correspondence is located at respectively on this first electric contact mat 311, and the material that forms this metal buffer layer 32 is the soldering tin material of low-melting-point metal, and the material of this soldering tin material is tin (Sn), silver (Ag), copper (Cu), zinc (Zn) or indium (In).
Described a plurality of projection 33, correspondence is located at respectively on this metal buffer layer 32, and the fusing point of this projection 33 is higher than this metal buffer layer 32, and the material that forms this projection 33 is a refractory metal, and the material of this refractory metal is aluminium (Al), copper (Cu) or nickel (Ni).
According to described encapsulating structure, also comprise barrier layer 34, be formed between this metal buffer layer 32 and first electric contact mat 311, and the material that forms this barrier layer 34 is nickel (Ni), shown in Fig. 2 A and 2B.
According to the above, also can be included in and form soldering tin material 35 on this projection 33, shown in Fig. 3 A and 3B again; Or on the exposed surface of this projection 33, form surface-treated layer 36, and the material that forms this surface-treated layer 36 is electronickelling/gold, chemical nickel plating/gold, changes nickel and soak gold (ENIG), change the nickel palladium and soak gold (ENEPIG), chemical plating stannum (Immersion Tin), chemical silvering or electrotinning, shown in Fig. 4 A and 4B.
As mentioned above, also can on this base plate for packaging 31, form insulating protective layer 37, and this insulating protective layer 37 and expose described projection 33, shown in Fig. 5 A and 5B, and can on projection 33 surfaces of exposing, form this surface-treated layer 36, shown in 5A figure; Or this insulating protective layer 37 and be formed on described projection 33 sides, and expose the end face of described projection 33, shown in Fig. 6 A and 6B.
As mentioned above, also can form soldering tin material 35, shown in Fig. 7 A and 7B at the end face of this projection 33.
See also Fig. 8 B and 8C, described projection 33 correspondences of this encapsulating structure 3 connect puts at printed circuit board (PCB) 4 (shown in Fig. 8 B) or another encapsulating structure 3 ' (shown in Fig. 8 C), and a surface of this printed circuit board (PCB) 4 has respectively the 3rd electric contact mat 41 of this projection 33 of a plurality of correspondences, or the second surface 31b ' of another encapsulating structure 3 ' has respectively the 3rd electric contact mat 313 of this projection 33 of a plurality of correspondences, and form this soldering tin material 35 on this projection 33, make soldering tin material 35 correspondences on the described projection 33 be electrically connected to the 3rd electric contact mat 41 of this printed circuit board (PCB) 4 or the 3rd electric contact mat 313 of another encapsulating structure 3 ', thereby this encapsulating structure 3 is electrically connected on this printed circuit board (PCB) 4 or another encapsulating structure 3 '; And this soldering tin material 35 only is formed on the end of this projection 33, thereby can avoid in reflow is handled unnecessary soldering tin material to produce overflow and cause the situation of bridge joint short circuit.
Encapsulating structure of the present invention, be with routing or cover crystal type and electrically connect this semiconductor wafer on the second surface of this base plate for packaging, and on first electric connection pad of this first surface, form the metal buffer layer of low-melting-point metal, on this metal buffer layer, form the projection of refractory metal again, to pass through this metal buffer layer, in reflow is handled than this projection elder generation fusion, thereby make this projection in reflow is handled, can provide resilient bias by this elder generation's melt metal resilient coating, so that described projection can discharge the stress because of off normal produced in the cooling procedure of described metal buffer layer, and described projection can present after unlike existing tin ball warp reflow spherical, and cause the pitch smaller between tin ball and tin ball to produce the bridge joint problem of short-circuit, and then can avoid having now the disappearance that is produced at electric connection structure described in the reflow processing.
Described embodiment is illustrative principle of the present invention and effect thereof only, but not is used to limit the present invention.Any those skilled in the art all can be under essence of the present invention and category, and described embodiment is modified and changes.Therefore, the scope of the present invention should be listed as claims.
Claims (23)
1. the electric connection structure of a base plate for packaging, on this base plate for packaging, be provided with a plurality of first electric contact mats, on this first electric contact mat, be provided with this electric connection structure, by this electric connection structure to be electrically connected to printed circuit board (PCB) or encapsulating structure, it is characterized in that this electric connection structure comprises:
A plurality of metal buffer layers, correspondence are located at respectively on this first electric contact mat, and the material that forms this metal buffer layer is a soldering tin material; And
A plurality of projections, correspondence are located at respectively on this metal buffer layer, and the fusing point of this projection is higher than this metal buffer layer.
2. the electric connection structure of base plate for packaging according to claim 1 is characterized in that, the material that forms this soldering tin material is tin (Sn), silver (Ag), copper (Cu), zinc (Zn) or indium (In).
3. the electric connection structure of base plate for packaging according to claim 1 is characterized in that, the material that forms this projection is aluminium (Al), copper (Cu) or nickel (Ni).
4. the electric connection structure of base plate for packaging according to claim 1 is characterized in that, also comprises barrier layer, and this barrier layer is formed between this metal buffer layer and first electric contact mat.
5. the electric connection structure of base plate for packaging according to claim 4 is characterized in that, the material that forms this barrier layer is nickel (Ni).
6. according to the electric connection structure of claim 1 or 4 described base plate for packaging, it is characterized in that also comprise soldering tin material, this soldering tin material is formed on this projection.
7. according to the electric connection structure of claim 1 or 4 described base plate for packaging, it is characterized in that also comprise surface-treated layer, this surface-treated layer is formed on the exposed surface of this projection.
8. the electric connection structure of base plate for packaging according to claim 7, it is characterized in that the material that forms this surface-treated layer is electronickelling/gold, chemical nickel plating/gold, change nickel soaks gold (ENIG), changes the nickel palladium and soak gold (ENEPIG), chemical plating stannum (Immersion Tin), chemical silvering or electrotinning.
9. the electric connection structure of base plate for packaging according to claim 7 is characterized in that, also comprises insulating protective layer, and this insulating protective layer is formed on this base plate for packaging, and exposes described projection, and this surface-treated layer is formed on the exposed surface of this projection.
10. according to the electric connection structure of claim 1 or 4 described base plate for packaging, it is characterized in that, also comprise insulating protective layer, this insulating protective layer is formed on this base plate for packaging and described projection side, and exposes the end face of described projection.
11. the electric connection structure of base plate for packaging according to claim 10 is characterized in that, also comprises soldering tin material, this soldering tin material is formed on the end face of this projection.
12. an encapsulating structure comprises:
Base plate for packaging has first surface and second surface, is provided with a plurality of first electric contact mats on this first surface, is provided with a plurality of second electric contact mats on this second surface;
Semiconductor wafer electrically connects described second electric contact mat;
A plurality of metal buffer layers, correspondence are located at respectively on this first electric contact mat, and the material that forms this metal buffer layer is a soldering tin material; And
A plurality of projections, correspondence are located at respectively on this metal buffer layer, and the fusing point of this projection is higher than this metal buffer layer.
13. encapsulating structure according to claim 12 is characterized in that, this semiconductor wafer electrically connects described second electric contact mat with wire bond structure or flip chip structure.
14. encapsulating structure according to claim 12 is characterized in that, the material that forms this soldering tin material is tin (Sn), silver (Ag), copper (Cu), zinc (Zn) or indium (In).
15. encapsulating structure according to claim 12 is characterized in that, the material that forms this projection is aluminium (Al), copper (Cu) or nickel (Ni).
16. encapsulating structure according to claim 12 is characterized in that, also comprises barrier layer, this barrier layer is formed between this metal buffer layer and first electric contact mat.
17. encapsulating structure according to claim 16 is characterized in that, the material that forms this barrier layer is nickel (Ni).
18., it is characterized in that also comprise soldering tin material, this soldering tin material is formed on this projection according to claim 12 or 16 described encapsulating structures.
19., it is characterized in that also comprise surface-treated layer, this surface-treated layer is formed on the exposed surface of this projection according to claim 12 or 16 described encapsulating structures.
20. encapsulating structure according to claim 19, it is characterized in that the material that forms this surface-treated layer is electronickelling/gold, chemical nickel plating/gold, change nickel soaks gold (ENIG), changes the nickel palladium and soak gold (ENEPIG), chemical plating stannum (Immersion Tin), chemical silvering or electrotinning.
21. encapsulating structure according to claim 19 is characterized in that, also comprises insulating protective layer, this insulating protective layer is formed on the first surface of this base plate for packaging, and exposes described projection, and this surface-treated layer is formed on the exposed surface of this projection.
22., it is characterized in that according to claim 12 or 16 described encapsulating structures, also comprise insulating protective layer, this insulating protective layer is formed on first surface and the described projection side on this base plate for packaging, and exposes the end face of described projection.
23. encapsulating structure according to claim 22 is characterized in that, also comprises soldering tin material, this soldering tin material is formed on the end face of this projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910165565 CN101989588A (en) | 2009-07-30 | 2009-07-30 | Electrical connecting structure used for packaging substrate and packaging structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910165565 CN101989588A (en) | 2009-07-30 | 2009-07-30 | Electrical connecting structure used for packaging substrate and packaging structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101989588A true CN101989588A (en) | 2011-03-23 |
Family
ID=43746046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200910165565 Pending CN101989588A (en) | 2009-07-30 | 2009-07-30 | Electrical connecting structure used for packaging substrate and packaging structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101989588A (en) |
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2009
- 2009-07-30 CN CN 200910165565 patent/CN101989588A/en active Pending
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Application publication date: 20110323 |