CN101989464A - 存储器测试方法和外部测试仪 - Google Patents
存储器测试方法和外部测试仪 Download PDFInfo
- Publication number
- CN101989464A CN101989464A CN200910056020XA CN200910056020A CN101989464A CN 101989464 A CN101989464 A CN 101989464A CN 200910056020X A CN200910056020X A CN 200910056020XA CN 200910056020 A CN200910056020 A CN 200910056020A CN 101989464 A CN101989464 A CN 101989464A
- Authority
- CN
- China
- Prior art keywords
- unit
- storage unit
- testing
- memory
- linkage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910056020XA CN101989464B (zh) | 2009-08-06 | 2009-08-06 | 存储器测试方法和外部测试仪 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910056020XA CN101989464B (zh) | 2009-08-06 | 2009-08-06 | 存储器测试方法和外部测试仪 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101989464A true CN101989464A (zh) | 2011-03-23 |
CN101989464B CN101989464B (zh) | 2012-10-31 |
Family
ID=43745959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910056020XA Expired - Fee Related CN101989464B (zh) | 2009-08-06 | 2009-08-06 | 存储器测试方法和外部测试仪 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101989464B (zh) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19990018125A (ko) * | 1997-08-26 | 1999-03-15 | 윤종용 | Ic칩 검사용 테스터데이타 압축방법과 그 압축장치 및 ic칩용 테스터장치와 그 테스터방법 |
JP2005524851A (ja) * | 2002-05-08 | 2005-08-18 | エヌピーテスト, インコーポレイテッド | 複数の命令メモリを有するテスタシステム |
KR100899855B1 (ko) * | 2006-01-24 | 2009-05-29 | 가부시키가이샤 어드밴티스트 | 시험장치 및 선택장치 |
-
2009
- 2009-08-06 CN CN200910056020XA patent/CN101989464B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101989464B (zh) | 2012-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101807432B (zh) | 用于操作闪存器件的方法 | |
US7610525B2 (en) | Defective memory block identification in a memory device | |
CN101174469B (zh) | 在与非闪存阵列中施加读电压的方法 | |
US9218242B2 (en) | Write operations for defect management in nonvolatile memory | |
US7289363B2 (en) | Memory cell repair using fuse programming method in a flash memory device | |
US20150006790A1 (en) | Efficient post write read in three dimensional nonvolatile memory | |
US9437321B2 (en) | Error detection method | |
CN106024061A (zh) | 半导体器件及其操作方法 | |
CN104064219A (zh) | 半导体存储装置、控制器、和存储器系统 | |
KR20120031111A (ko) | 반도체 기억 장치 | |
US20090003071A1 (en) | Semiconductor storage device and read voltage correction method | |
KR20110001591A (ko) | 불휘발성 메모리 소자의 동작 방법 | |
US11404122B2 (en) | Sub-block size reduction for 3D non-volatile memory | |
CN105051825A (zh) | 共享位线的串架构 | |
WO2020222882A1 (en) | Detecting short circuit between word line and source line in memory device and recovery method | |
US9595338B2 (en) | Utilizing NAND strings in dummy blocks for faster bit line precharge | |
US11508443B2 (en) | Nonvolatile memory device including a peripheral circuit to verify a program operation | |
CN103177765A (zh) | 半导体存储器件及其操作方法 | |
WO2020146056A1 (en) | Memory device with compensation for program speed variations due to block oxide thinning | |
US9934858B2 (en) | Use of dummy word lines for metadata storage | |
US20160124664A1 (en) | Block Level Local Column Redundancy Methods for Higher Yield | |
JP2012212487A (ja) | メモリシステム | |
KR100874914B1 (ko) | 데이터 프로그램 및 검증 시간을 단축시킨 불휘발성메모리 장치 및 그 구동방법 | |
JP2010160871A (ja) | 不揮発性半導体記憶装置 | |
US20100046293A1 (en) | Memory cell block of nonvolatile memory device and method of managing supplementary information |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121025 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121025 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20121031 Termination date: 20200806 |
|
CF01 | Termination of patent right due to non-payment of annual fee |