CN101988909B - Failure analysis method of low k dielectric material - Google Patents
Failure analysis method of low k dielectric material Download PDFInfo
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- CN101988909B CN101988909B CN2009100560163A CN200910056016A CN101988909B CN 101988909 B CN101988909 B CN 101988909B CN 2009100560163 A CN2009100560163 A CN 2009100560163A CN 200910056016 A CN200910056016 A CN 200910056016A CN 101988909 B CN101988909 B CN 101988909B
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Abstract
The invention discloses a failure analysis method of low k dielectric material, comprising the following steps: performing the focused ion beam fixing cutting and the auxiliary electron beam scanning on the low k dielectric material to prepare a film sample; carrying out transmission electron microscope imaging on the film sample; and performing the failure judgment according to the appearance of the material obtained by the transmission electron microscope imaging. In the invention, the film sample of the low k dielectric material is prepared by using the focused ion beam fixing cutting and the auxiliary electron beam scanning under certain parameter condition, the appearance of the sample is obtained by the transmission electron microscope (TEM) imaging, and the failure judgment is performed according to the appearance of the sample, thus the process of the method is simple, economical, effective and easily realized, and the judgment is accurate and intuitive.
Description
Technical field
The present invention relates to the failure analysis field, relate in particular to a kind of failure analysis method of low k dielectric.
Background technology
Along with the development of integrated circuit technique, the size of components and parts is micro day by day, and the requirement of response speed is improved gradually.In circuit computing, the RC product value is too high to be the main factor that causes circuit signal to postpone.Therefore, the metal interconnection system signal delay (RC delay) that how to reduce in the circuit elements device is the major subjects of ic manufacturing technology.In the rear end of integrated circuit processing procedure (back-end of line), can reach the reduction stray capacitance through reducing the dielectric constant values (k value) of metal interlayer medium, improve the purpose of circuit speed.
The metal interlayer medium that is widely used at present (inter-metal dielectrics; IMD) material, common have a silicon dioxide (SiO
2), FSG (Fluorinated SiO
2).The specific inductive capacity of silicon dioxide is 4.0, and FSG is meant the fluorine doped silica, and its specific inductive capacity is about 3.5, all has been difficult to satisfy the demands.Existing a kind of novel low k (the k value is not more than 3.5) dielectric material is the black diamond (black diamond) that Applied Materials produces, and promptly porous SiOCH thin layer assists vapour deposition PECVD to be formed on the metal interconnecting layer through plasma.
Because the thermotolerance of porosity characteristic low k dielectric is relatively poor, in deposition process, if pecvd process is unusual; In conjunction with follow-up high-temperature annealing step; Can cause chemical constitution change in the low k dielectric, cause that the k value changes, and cause the chip electrical insulation capability to lose efficacy.Therefore need carry out failure analysis to low k gusset material layer, detect the variation of its k value.
Traditional measurement k value method comprises mercuryvapour sonde method and parallel plate capacitor method; Equal accurate sizes of the k value in the test material; But in manufacture of semiconductor; The mercuryvapour sonde method only can be applied to just not patternedly after the deposition to work as front medium layer, and the further failure analysis of semiconductor devices to making completion; The particular measurement that the parallel plate capacitor method only can be applied to select is regional, and insulate mutually with other parts of device, needs to use a large amount of light shield technology, and processing procedure is complicated, and cost is too high.
Use above-mentioned traditional k value measurement method, be difficult to directly obtain cost-effectively the k value of low k dielectric, thereby can not accurately judge its inefficacy mechanism.Therefore press for a kind of failure analysis method of new low k dielectric, address the above problem.
Summary of the invention
The problem that the present invention solves provides a kind of failure analysis method of low k dielectric, and flow process is simple, and economical and effective can judge accurate and visually whether material failure takes place.For addressing the above problem, the invention provides a kind of failure analysis method of low k dielectric, specifically comprise:
Low k dielectric is adopted cutting of FIB fixed point and the preparation of auxiliary electron bundle scanning carrying out film sample;
Film sample is carried out the transmission electron microscope imaging;
According to the material pattern that said transmission electron microscope imaging obtains, the judgement of losing efficacy.
As possibility, when the cutting of said FIB fixed point scanned with the auxiliary electron bundle, the energy of ion beam and electron beam was for destroying the critical value of the low k dielectric pattern that did not lose efficacy.
As possibility, the foundation that said inefficacy is judged is: if the smooth densification of the pattern of film sample, then said low k dielectric did not lose efficacy; If the pattern porosity and looseness of film sample, then said low k dielectric lost efficacy.
As possibility, be not less than the semiconductor technology of 65nm for characteristic dimension, the k value of the said low k dielectric that did not lose efficacy is not less than 3.0; The cutting of said FIB fixed point comprises with the parameter of auxiliary electron bundle scanning: use the Ga ion beam, accelerating potential is 30kV, and ion beam current is 100pA; The accelerating potential of auxiliary electron bundle is 5kV; The employed beam voltage of said transmission electron microscope is 200kV.
As possibility, for the semiconductor technology of characteristic dimension less than 65nm, the k value of the said low k dielectric that did not lose efficacy is not less than 2.7; The cutting of said FIB fixed point comprises with the parameter of auxiliary electron bundle scanning: use the Ga ion beam, accelerating potential is 5kV, and ion beam current is 50pA; The accelerating potential of auxiliary electron bundle is 1kV; The employed beam voltage of said transmission electron microscope is 200kV.
As possibility, in the preparation process of said film sample, the scanning of auxiliary electron bundle follows the cutting of FIB fixed point to carry out simultaneously.
As possibility, the ion gun that the cutting of said FIB fixed point is used is Ga ion or In ion.
As possibility, the thickness of said film sample is not more than 100nm.
Compared with prior art; The present invention has the following advantages: use the FIB fixed point cutting of special parameter condition and the film sample of auxiliary electron bundle scanning preparation low k dielectric; And obtain sample topography through transmission electron microscope TEM imaging, the pattern judgement of losing efficacy per sample, so flow process of the present invention is simple; Economical and effective is easy to realize, and judges accurate and visual.
Description of drawings
Fig. 1 is the schematic flow sheet of failure analysis method according to the invention;
Fig. 2 is the sectional structure chart that comprises the circuit devcie of low k dielectric in the failure analysis method specific embodiment according to the invention;
Fig. 3 is the synoptic diagram that FIB fixed point according to the invention cutting and the scanning of auxiliary electron bundle destroy the low k dielectric pattern;
Fig. 4 is the transmission electron microscope photo of the low k dielectric that do not lose efficacy among failure analysis method first embodiment according to the invention;
Fig. 5 is the transmission electron microscope photo of the low k dielectric that lost efficacy among failure analysis method first embodiment according to the invention;
Fig. 6 is the transmission electron microscope photo of the low k dielectric that do not lose efficacy among failure analysis method second embodiment according to the invention.
Embodiment
Can know that from the background technology description process abnormality in the ic manufacturing process possibly cause that the k value of low k dielectric (like intermetallic dielectric layer) changes.Its main failure phenomenon is: the k value of metal interlamination medium layer reduces, and makes its decreasing insulating, and causes the inefficacy of device electrical insulation capability.
K value reduction along with low k dielectric; Chemical bond in its structure between the atom is weakened, and such as in black diamond (black diamond) material, the Si-C key of porous SiOCH thin layer will trend towards instability; Its porosity characteristic will be enhanced; It is loose that structure is tending towards, and compares with the normal low k dielectric that did not lose efficacy, and structure is easier to be destroyed.
The present invention utilizes above-mentioned chemical characteristic; Adopt the FIB cutting of special parameter condition to carry out sample preparation with the double-beam system (Dual Beam FIB) that the auxiliary electron bundle scans; Amplify the porosity characteristic of the low k dielectric after losing efficacy; The enhancing that obtains porosity characteristic shows pattern, and compares with the pattern that did not lose efficacy, thereby loses efficacy judgement intuitively.
The failure analysis method of low k dielectric of the present invention is as shown in Figure 1, and basic procedure comprises:
S1, low k dielectric is adopted cutting of FIB fixed point and the preparation of auxiliary electron bundle scanning carrying out film sample;
When wherein the cutting of FIB fixed point is with the scanning of auxiliary electron bundle; The energy of ion beam and electron beam is for destroying the critical value of the low k dielectric pattern that did not lose efficacy, and the low k dielectric that did not promptly lose efficacy is in sample making course; Its structure and morphology, molecular arrangement etc. can't receive the influence of FIB or auxiliary electron bundle; The low k dielectric that lost efficacy is because the k value descends short texture; Will be focused ion beam and auxiliary electron bundle and destroy the part chemical constitution, thereby amplify its porosity characteristic.
Said auxiliary electron bundle scanning follows the cutting of FIB fixed point to carry out simultaneously; When promptly adopting FIB cutting sample; The auxiliary electron bundle scans the cutting position of FIB; Obtain the pattern information of relevant position, guarantee the accuracy of FIB cutting position, improve sample preparation efficient; The thermal effect that while auxiliary electron bundle produces when sample surfaces scans also can further be strengthened the porosity characteristic of amplifying the low k dielectric sample.
Optional, said ion beam can adopt ion gun to comprise Ga ion, In ion etc.
S2, film sample is carried out transmission electron microscope imaging;
Wherein, the contrast picture that three-dimensional scattered information obtains sample topography takes place through the atom and the transmission sample of electron beam bump target sample according to electron beam in transmission electron microscope, so the thickness of film sample is unsuitable excessive.
Need carry out transmission electron microscope imaging after this external film sample prepares immediately, influence image quality with the diffusion that prevents interconnecting metal such as Cu around the low k dielectric.
S3, the material pattern that imaging obtains according to said transmission electron microscope, the judgement of losing efficacy.
The foundation that said inefficacy is judged is: if the smooth densification of the pattern of film sample, then said low k dielectric did not lose efficacy; If the pattern porosity and looseness of film sample, then said low k dielectric lost efficacy.
Below in conjunction with specific embodiment, failure analysis method according to the invention is done further introduction.
As shown in Figure 2, be the sectional structure chart of the circuit devcie that includes low k dielectric, more specifically, be the schematic cross-section that adopts the IC chip comb shaped interconnect wire system of low k dielectric, comprising:
Following dielectric layer 10, upper dielectric layer 20 and at the pectination metal interconnecting wires 30 between dielectric layer 10 and the upper dielectric layer 20 down.
Wherein, said dielectric layer 10 down and upper dielectric layer 20 include the silicon oxynitride cap 101 on fsg film 100 and surface thereof; Fill low k dielectric between the said pectination metal interconnecting wires 30 and form intermetallic dielectric layer 40.
The object of the required detection of failure analysis method of low k dielectric according to the invention, promptly intermetallic dielectric layer 40, and in the present embodiment, the material that said intermetallic dielectric layer 40 is selected for use is a black diamond, i.e. porosity characteristic SiOCH membraneous material.
At first, according to definite technological parameters such as the material of the required low k dielectric that carries out failure analysis and specific inductive capacity inefficacy critical values.
Usually in the transmission electron microscope imaging, the film sample thickness of preparation is not more than 100nm, and the sample preparation zone is the square panel region of length of side 5um～6um.In the intermetallic dielectric layer 40 of normal employing low k dielectric; K value size depends on the needs of manufacturing process; In 90nm to 65nm technology; The k value standard of normal intermetallic dielectric layer 40 is about 3.0, and after getting into inferior 65nm technology, the k value standard of normal intermetallic dielectric layer 40 is reduced to 2.7.Therefore judge that whether intermetallic dielectric layer 40 lost efficacy, need to confirm in advance the inefficacy critical value of specific inductive capacity.
After said specific inductive capacity inefficacy critical value is determined; The chemical property of intermetallic dielectric layer 40 was not fixed yet when then losing efficacy; Can obtain the destruction critical value of the required ion energy of material pattern of intermetallic dielectric layer 40 that do not lose efficacy through experiment, and further confirm the parameter condition of cutting of FIB fixed point and auxiliary electron bundle scanning sample preparation.
Intermetallic dielectric layer 40 for different value of K; Its material and structure density there are differences; When therefore adopting the cutting of FIB fixed point with auxiliary electron bundle scanning sample preparation, desired ion beam accelerating voltage, ion beam current and beam voltage are also inequality.The dielectric material that the k value is higher generally, structure is fine and close, the above-mentioned parameter value that needs is higher; And the dielectric material that the k value is lower, structure is loose is also lower to the requirement of above-mentioned parameter value.
In order to have enough energy and stable ion gun, the employed ion gun of FIB can be Ga ion, In ion.In the present embodiment, adopt the Ga ion as ion gun.
Secondly, adopt above-mentioned definite technological parameter, use cutting of FIB fixed point and auxiliary electron bundle scanning preparation film sample, and the scanning of said auxiliary electron bundle follows the cutting of FIB fixed point to carry out simultaneously, to improve sample preparation efficient.
Because when the cutting of FIB fixed point scans with the auxiliary electron bundle; The energy of ion beam and electron beam is for destroying the needed critical value of material pattern of the intermetallic dielectric layer 40 that do not lose efficacy; Therefore for the film sample that did not lose efficacy; Prepare in the process at film sample, its structure and morphology can't change, and the shape characteristic when not losing efficacy is consistent; And for failed film sample, as shown in Figure 3, because the k value descends; The material of intermetallic dielectric layer 40 is loose, and the chemical bond of Si-C is weak in the SiOCH molecule, after cutting of FIB fixed point and the scanning of auxiliary electron bundle; The part molecular structure is destroyed; The porosity characteristic of intermetallic dielectric layer 40 will be exaggerated, and structure and morphology will change, and the shape characteristic when not losing efficacy is different.
Then, use transmission electron microscope that film sample is carried out to picture.
Because ic component is higher to the transmission electron microscope resolution requirement when micro-imaging; Transmission electron microscope needs higher accelerating potential when producing electron beam with the field radiation pattern; Obtain film sample pattern information everywhere; The pattern of all positions on the sample is information integrated, promptly can obtain the film sample pattern photo of complete intermetallic dielectric layer 40.
At last, according to resulting film sample pattern photo, carry out inefficacy mechanism and judge.Wherein judgment basis is: if the smooth densification of the pattern of film sample, the shape characteristic when not losing efficacy is consistent, and then said intermetallic dielectric layer 40 did not lose efficacy; If the pattern porosity and looseness of film sample, the shape characteristic when not losing efficacy is different, and then said intermetallic dielectric layer 40 had lost efficacy.Further,, can also use earlier the known intermetallic dielectric layer that did not lose efficacy 40 to make film samples, and through the transmission electron microscope imaging, with its pattern photo standard as a comparison for the judgement of more intuitively comparing effectively.
According to the foregoing description, the present invention also provides in the manufacturing process of different characteristic size, to intermetallic dielectric layer 40 carry out failure analysis the time, technological parameter that is adopted and corresponding transmission electron microscope imaging results, specific as follows:
Embodiment one
In 90nm to 65nm manufacturing process, when said intermetallic dielectric layer 40 did not lose efficacy, the k value was not less than 3.0.In the present embodiment, through the critical condition experiment, the FIB fixed point cutting that selection is adopted with the parameter that the auxiliary electron bundle scans sample preparation is: adopt the Ga ion gun, accelerating potential is 30kV, and ion beam current is 100pA; The scanning accelerating potential of auxiliary electron bundle is 5kV.And the employed beam voltage of transmission electron microscope is 200kV.
As shown in Figure 4; Be the transmission electron microscope photo of the intermetallic dielectric layer 40 that do not lose efficacy, its k value is slightly larger than 3.0, through the cutting of FIB fixed point and the scanning sample preparation of auxiliary electron bundle and transmission electron microscope imaging back it is thus clear that; The still smooth densification of dielectric structure (shown in the frame of broken lines) is not damaged.
As shown in Figure 5; Transmission electron microscope photo for the intermetallic dielectric layer 40 that lost efficacy; Its k value has been lower than 3.0, and therefore visible with scanning sample preparation of auxiliary electron bundle and transmission electron microscope imaging back through the cutting of FIB fixed point, dielectric structure is porosity and looseness shape (shown in the frame of broken lines); Its porosity characteristic has been strengthened by the fixed point ion beam and has amplified, and shows intuitively.
Embodiment two
In inferior 65nm manufacturing process, when said intermetallic dielectric layer 40 did not lose efficacy, the k value was not less than 2.7.In the present embodiment, through the critical condition experiment, the FIB fixed point cutting that selection is adopted with the parameter that the auxiliary electron bundle scans sample preparation is: adopt the Ga ion gun, accelerating potential is 5kV, and ion beam current is 50pA; The scanning accelerating potential of auxiliary electron bundle is 1kV.And the employed beam voltage of transmission electron microscope is 200kV.
As shown in Figure 6; Be the transmission electron microscope photo of the intermetallic dielectric layer 40 that do not lose efficacy, its k value is slightly larger than 2.7, through the cutting of FIB fixed point and the scanning sample preparation of auxiliary electron bundle and transmission electron microscope imaging back it is thus clear that; The still smooth densification of dielectric structure (shown in the frame of broken lines) is not damaged.
The result who shows according to above-mentioned specific embodiment, but knowledge capital is invented the failure analysis method of said low k dielectric, and flow process is simple, utilizes existing transmission electron microscope TEM equipment, has realized the failure analysis to low k dielectric intuitively, has good effect.
Though the present invention with preferred embodiment openly as above; But it is not to be used for limiting claim; Any those skilled in the art are not breaking away from the spirit and scope of the present invention; Can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (12)
1. the failure analysis method of a low k dielectric is characterized in that, comprising:
Low k dielectric is adopted cutting of FIB fixed point and the preparation of auxiliary electron bundle scanning carrying out film sample;
Film sample is carried out the transmission electron microscope imaging;
According to the material pattern that said transmission electron microscope imaging obtains, the judgement of losing efficacy, if the smooth densification of the pattern of said film sample, then said low k dielectric did not lose efficacy, if the pattern porosity and looseness of said film sample, then said low k dielectric lost efficacy.
2. failure analysis method as claimed in claim 1 is characterized in that, when the cutting of said FIB fixed point scanned with the auxiliary electron bundle, the energy of ion beam and electron beam was for destroying the critical value of the low k dielectric pattern that did not lose efficacy.
3. failure analysis method as claimed in claim 2 is characterized in that, the foundation that said inefficacy is judged is: if the smooth densification of the pattern of film sample, then said low k dielectric did not lose efficacy; If the pattern porosity and looseness of film sample, then said low k dielectric lost efficacy.
4. failure analysis method as claimed in claim 2 is characterized in that, is not less than the semiconductor technology of 65nm for characteristic dimension, and the k value of the said low k dielectric that did not lose efficacy is not less than 3.0.
5. failure analysis method as claimed in claim 4 is characterized in that, the cutting of said FIB fixed point comprises with the parameter of auxiliary electron bundle scanning: use the Ga ion beam, accelerating potential is 30kV, and ion beam current is 100pA; The accelerating potential of auxiliary electron bundle is 5kV.
6. failure analysis method as claimed in claim 5 is characterized in that, the employed beam voltage of said transmission electron microscope is 200kV.
7. failure analysis method as claimed in claim 2 is characterized in that, for the semiconductor technology of characteristic dimension less than 65nm, the k value of the said low k dielectric that did not lose efficacy is not less than 2.7.
8. failure analysis method as claimed in claim 7 is characterized in that, the cutting of said FIB fixed point comprises with the parameter of auxiliary electron bundle scanning: use the Ga ion beam, accelerating potential is 5kV, and ion beam current is 50pA; The accelerating potential of auxiliary electron bundle is 1kV.
9. failure analysis method as claimed in claim 8 is characterized in that, the employed beam voltage of said transmission electron microscope is 200kV.
10. failure analysis method as claimed in claim 1 is characterized in that said film sample prepares in the process, and the scanning of auxiliary electron bundle follows the cutting of FIB fixed point to carry out simultaneously.
11. failure analysis method as claimed in claim 1 is characterized in that, the ion gun that the cutting of said FIB fixed point is used is Ga ion or In ion.
12. failure analysis method as claimed in claim 1 is characterized in that, the thickness of said film sample is not more than 100nm.
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102420151B (en) * | 2011-04-29 | 2013-12-04 | 上海华力微电子有限公司 | Detection method used for characterizing damage of low-dielectric material |
| CN103871917B (en) * | 2012-12-07 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | The method preparing semiconductor failure analysis sample |
| CN104101530A (en) * | 2013-04-11 | 2014-10-15 | 嘉兴市特种设备检测院 | Method for preparing 15CrMo superheater tube failure analysis sample |
| CN103543056B (en) * | 2013-10-30 | 2015-10-07 | 武汉新芯集成电路制造有限公司 | A kind of failure ratio certain bits method prepared in perspective electron microscopic sample process |
| CN103645073A (en) * | 2013-11-22 | 2014-03-19 | 上海华力微电子有限公司 | Method for preparing TEM sample |
| CN103900868A (en) * | 2014-02-21 | 2014-07-02 | 上海华力微电子有限公司 | Preparation method of plane transmission electron microscope (TEM) sample |
| CN105510097A (en) * | 2015-12-18 | 2016-04-20 | 山东省分析测试中心 | Ceramic material failure analysis method based on transmission electron microscope |
| CN105806679A (en) * | 2016-05-17 | 2016-07-27 | 上海华力微电子有限公司 | Preparation method for TEM sample |
| CN105784744A (en) * | 2016-05-17 | 2016-07-20 | 上海华力微电子有限公司 | Preparation method of TEM (Transmission Electron Microscope) sample with low-dielectric-constant material |
| CN109725246B (en) * | 2017-10-31 | 2021-05-11 | 无锡华润上华科技有限公司 | Failure analysis method and system for integrated circuit |
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