CN101987430A - Fixing ring for chemically and mechanically grinding - Google Patents
Fixing ring for chemically and mechanically grinding Download PDFInfo
- Publication number
- CN101987430A CN101987430A CN2009101590310A CN200910159031A CN101987430A CN 101987430 A CN101987430 A CN 101987430A CN 2009101590310 A CN2009101590310 A CN 2009101590310A CN 200910159031 A CN200910159031 A CN 200910159031A CN 101987430 A CN101987430 A CN 101987430A
- Authority
- CN
- China
- Prior art keywords
- retainer ring
- wafer
- inwall
- cmp
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a fixing ring for chemically and mechanically grinding, which is suitable for fixing a wafer. In the invention, the inner wall of the fixing ring is in contact with a wafer, and the total contact length between the inner wall of the fixing ring and the wafer is shorter than the perimeter of the wafer by 80 percent.
Description
Technical field
The present invention relates to a kind of equipment that is used for cmp, and be particularly related to a kind of retainer ring (retainer ring) that is used for cmp.
Background technology
In semiconductor process technique, having an even surface is to handle an important technology of the little shadow of high density.The flat surfaces that does not have height to rise and fall causes scattering in the time of can avoiding exposing, to reach accurate design transfer (pattern transfer).Chemical mechanical milling method uniquely can provide super large-scale integration (very-large scale integration for present, VLSI), even great scale integrated circuit (ultra-large scale integration, ULSI) a kind of technology of technology " comprehensive planarization (globalplanarization) ".Therefore, the planarization of wafer all is to finish with chemical mechanical milling tech at present.
In general, chemical mechanical milling tech is with grinding head the back side of wafer to be fixed earlier, the front of wafer is pressed on the grinding table with grinding pad grinds then.In addition, in the process of grinding, retainer ring (retainer ring) can be configured in usually wafer around, to prevent the wafer slippage.
In order to make retainer ring can prevent the wafer slippage effectively, can apply great downforce usually and fix wafer.Yet downforce tends to cause wafer grinding pad on every side to produce deformation (rebound) greatly, causes the grinding rate of Waffer edge wayward.In addition, because the inwall of retainer ring contacts fully with the edge of wafer, make and to grind slurry or grind between the edge of inwall that accessory substance remains in retainer ring easily and wafer and be not easy cleaning, thereby produce many particles (particle) and cause wafer to suffer damage.
Summary of the invention
The invention provides a kind of retainer ring of cmp, its grinding pad that can reduce around the wafer produces the area of distortion.
The invention provides a kind of retainer ring of cmp, it can reduce grinding slurry or grinding accessory substance between the edge of the inwall that remains in retainer ring and wafer.
The present invention provides a kind of retainer ring of cmp again, and it can improve the control to the grinding rate of Waffer edge.
The present invention proposes a kind of retainer ring that is used for cmp, and it is suitable for fixed wafer.The inwall of retainer ring contacts with wafer, and the total contact length between the inwall of retainer ring and the wafer is less than 80% of the girth of wafer.
According to the described retainer ring that is used for cmp of the embodiment of the invention, the inwall of above-mentioned retainer ring for example has a plurality of grooves, and the summation of the width of these grooves is greater than 20% of the girth of wafer.
The present invention also proposes a kind of retainer ring that is used for cmp, and it is suitable for fixed wafer.The inwall of retainer ring contacts with wafer, and the shape of the inwall of retainer ring is different with the shape of wafer.
According to the described retainer ring that is used for cmp of the embodiment of the invention, the shape of the inwall of above-mentioned retainer ring for example is non-circular.
According to the described retainer ring that is used for cmp of the embodiment of the invention, the shape of the inwall of above-mentioned retainer ring for example is a polygon.
According to the described retainer ring that is used for cmp of the embodiment of the invention, the total contact length between the inwall of above-mentioned retainer ring and the wafer is for example less than 80% of the girth of wafer.
The present invention reintroduces a kind of retainer ring that is used for cmp, and it is suitable for fixed wafer.The inwall of retainer ring contacts with wafer, and the inwall of retainer ring has a plurality of outstanding structures (protrusion).
According to the described retainer ring that is used for cmp of the embodiment of the invention, the above-mentioned outstanding structure and the summation of the contact length between the wafer are for example less than 80% of the girth of wafer.
Based on above-mentioned, the present invention has reduced the area that the inwall of retainer ring contacts with wafer, therefore can more easily clean grinding slurry and grinding accessory substance between the inwall of retainer ring and the Waffer edge, wafer be damaged to avoid residual grinding slurry and grind accessory substance.In addition, the grinding pad that the present invention has also reduced around the wafer effectively produces the area of distortion, therefore the grinding rate of easier control Waffer edge and have better grinding performance.
For above-mentioned feature and advantage of the present invention can be become apparent, below especially exemplified by embodiment, and conjunction with figs. is described in detail below.
Description of drawings
Fig. 1 is a kind of schematic top plan view that is used for the retainer ring of cmp of first embodiment of the invention.
Fig. 2 is used for the schematic top plan view of the retainer ring of cmp for the another kind of first embodiment of the invention.
Fig. 3 is the schematic top plan view of the retainer ring that is used for cmp of second embodiment of the invention.
Fig. 4 is a kind of schematic top plan view that is used for the retainer ring of cmp of third embodiment of the invention.
Fig. 5 is used for the schematic top plan view of the retainer ring of cmp for the another kind of third embodiment of the invention.
The main element symbol description:
Wafer-102; Outstanding structure-104,104a;
Groove-106; Width-W;
Retainer ring-100,100a, 100 ', 100 ", 100 " '.
The specific embodiment
In embodiments of the present invention, " contact length " is meant by the inwall of vertical view retainer ring and the length of wafer contact portion.
In first embodiment, by the outstanding structure on the inwall that is positioned at retainer ring the area that the inwall of retainer ring contacts with wafer is reduced, with reach area that the grinding pad that reduces around the wafer produces distortion, improve to the control of the grinding rate of Waffer edge and effectively clean the inwall of retainer ring and Waffer edge between grind slurry and the purpose of grinding accessory substance.
In addition, in a second embodiment, the area that total contact length between inwall by making retainer ring and the wafer contacts with wafer less than 80% inwall that reduces retainer ring of the girth of wafer, with reach area that the grinding pad that reduces around the wafer produces distortion, improve to the control of the grinding rate of Waffer edge and effectively clean the inwall of retainer ring and Waffer edge between grind slurry and the purpose of grinding accessory substance.
In addition, in the 3rd embodiment, the shape of the inwall by changing retainer ring makes the shape of inwall of retainer ring different with the shape of wafer, the area that contact with wafer with the inwall that reduces retainer ring, and then reach area that the grinding pad that reduces around the wafer produces distortion, improve the control of the grinding rate of Waffer edge and effectively clean the inwall of retainer ring and the purpose of grinding slurry and grinding accessory substance between the Waffer edge.
For convenience of description, in following each embodiment, will omit other equipment (as grinding pad etc.) in the chemical mechanical milling tech, and only describe the relation between retainer ring and the wafer.In addition, in following each embodiment, components identical will be represented with identical label.
First embodiment
Fig. 1 is a kind of schematic top plan view that is used for the retainer ring of cmp of first embodiment of the invention.Please refer to Fig. 1, the retainer ring 100 that is used for cmp is suitable for fixed wafer 102, and has been formed with various retes to be ground (not illustrating) on the wafer 102.Retainer ring 100 be positioned at wafer around and the inwall of retainer ring 100 contact with wafer 102, avoid wafer 102 slippage in the process of grinding so that wafer 102 is fixed.The inwall of retainer ring 100 has a plurality of outstanding structures 104.In the present embodiment, outstanding structure 104 for example is the structure of semicircle shape.Because outstanding structure 104 is the structure of semicircle shape, therefore the contact portion by each outstanding structure 104 of vertical view and wafer 102 is " point ", that is has reduced the inwall of retainer ring and the contact portion between the wafer.
In the present embodiment, owing to reduced the inwall of retainer ring and the contact portion between the wafer, therefore can reduce wafer grinding pad on every side and in process of lapping, produce the area of distortion, and then can control the grinding rate of Waffer edge effectively.In addition and since the inwall of retainer ring only with a part of EDGE CONTACT of wafer, therefore but not contact fully is easy to clean grinding slurry and grinding accessory substance between the inwall of retainer ring and the Waffer edge.
Need to prove that in other embodiments, outstanding structure also can have other suitable quantity and shapes, as long as can contact with wafer and wafer be fixed.For instance, Fig. 2 is used for the schematic top plan view of the retainer ring of cmp for the another kind of first embodiment of the invention.In Fig. 2, the outstanding structure 104a of retainer ring 100a for example is foursquare outstanding structure.
In addition, look actual demand, the summation that can also further make the contact length between outstanding structure and the wafer is less than 80% of the girth of wafer, with the inwall that reduces retainer ring effectively and the contact portion between the wafer.
Second embodiment
Fig. 3 is the schematic top plan view of the retainer ring that is used for cmp of second embodiment of the invention.For the inwall that reduced retainer ring and the contact portion between the wafer, total contact length between the inwall of retainer ring and the wafer is less than 80% of the girth of wafer in the present embodiment, and the mode that the inwall that is used in retainer ring forms groove reduces the inwall of retainer ring and the total contact length between the wafer.Please refer to Fig. 3, the inwall of retainer ring 100 ' has a plurality of grooves 106, and the summation of the width W of these grooves 106 is greater than 20% of the girth of wafer 102.That is to say, because the inwall of retainer ring 100 ' has 20% the groove 106 of width summation greater than the girth of wafer 102, therefore make that inwall and the total contact length between the wafer 102 of retainer ring 100 ' can be less than 80% of the girths of wafer 102, and then can reach the grinding pad that reduces around the wafer and produce the area of distortion, effectively control the grinding rate of Waffer edge and being easy to and clean the purpose of grinding slurry and grinding accessory substance between the inwall of retainer ring and the Waffer edge.
Certainly, in the present embodiment, the width and the quantity of groove 106 are not restricted, as long as the width summation of all grooves 106 is greater than 20% of the girth of wafer 102.
In addition, in other embodiments, the also available opening of above-mentioned groove 106 replaces, as long as the width summation of opening is greater than 20% of the girth of wafer 102.
Need be appreciated that above-mentioned " groove " is formed at the inwall of retainer ring and do not penetrate retainer ring, " opening " then is to be formed at the inwall of retainer ring and to penetrate retainer ring.
The 3rd embodiment
Fig. 4 is a kind of schematic top plan view that is used for the retainer ring of cmp of third embodiment of the invention.For the inwall that reduced retainer ring and the contact portion between the wafer, present embodiment uses the mode of the inner wall shape that changes retainer ring.Please refer to Fig. 4, retainer ring 100 " inner wall shape be quadrangle, its shape (circle) with wafer 102 is different.In detail, because retainer ring 100 " inner wall shape be quadrangle; so retainer ring 100 " inwall and the contact portion of wafer 102 be four " points ", that is reduced the inwall of retainer ring and the contact portion between the wafer, thereby can reach the grinding pad that reduces around the wafer and produce the area of distortion, effectively control the grinding rate of Waffer edge and being easy to and clean and grind slurry and the purpose of grinding accessory substance between the inwall of retainer ring and the Waffer edge.
Certainly, in other embodiments, retainer ring 100 " inner wall shape also can be the Any shape (non-circular) different, for example triangle, pentagon, hexagon with the shape (circle) of wafer 102 ... or the like polygon.For instance, Fig. 5 is used for the schematic top plan view of the retainer ring of cmp for the another kind of third embodiment of the invention.In Fig. 5, retainer ring 100 " ' inner wall shape for example be hexagon.
In addition, look actual demand, can also further make the inwall of retainer ring and the total contact length between the wafer, with the inwall that reduced retainer ring effectively and the contact portion between the wafer less than 80% of the girth of wafer.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (8)
1. a retainer ring that is used for cmp is suitable for fixing a wafer, and the inwall of this retainer ring contacts with this wafer, and the total contact length between the inwall of this retainer ring and this wafer is less than 80% of the girth of this wafer.
2. the retainer ring that is used for cmp according to claim 1, wherein the inwall of this retainer ring has a plurality of grooves, and the summation of the width of those grooves is greater than 20% of the girth of this wafer.
3. a retainer ring that is used for cmp is suitable for fixing a wafer, and the inwall of this retainer ring contacts with this wafer, and the shape of the inwall of this retainer ring is different with the shape of this wafer.
4. the retainer ring that is used for cmp according to claim 3, wherein the inwall of this retainer ring be shaped as non-circular.
5. the retainer ring that is used for cmp according to claim 4, wherein the inwall of this retainer ring is shaped as polygon.
6. the retainer ring that is used for cmp according to claim 3, wherein the total contact length between the inwall of this retainer ring and this wafer is less than 80% of the girth of this wafer.
7. a retainer ring that is used for cmp is suitable for fixing a wafer, and the inwall of this retainer ring contacts with this wafer, and the inwall of this retainer ring has a plurality of outstanding structures.
8. the retainer ring that is used for cmp according to claim 7, wherein the summation of the contact length between those outstanding structures and this wafer is less than 80% of the girth of this wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101590310A CN101987430A (en) | 2009-07-29 | 2009-07-29 | Fixing ring for chemically and mechanically grinding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101590310A CN101987430A (en) | 2009-07-29 | 2009-07-29 | Fixing ring for chemically and mechanically grinding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101987430A true CN101987430A (en) | 2011-03-23 |
Family
ID=43744323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101590310A Pending CN101987430A (en) | 2009-07-29 | 2009-07-29 | Fixing ring for chemically and mechanically grinding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101987430A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103158061A (en) * | 2011-12-14 | 2013-06-19 | 有研半导体材料股份有限公司 | Wafer mounting ring for fixing silicon wafer |
| CN106181752A (en) * | 2015-05-29 | 2016-12-07 | 应用材料公司 | Inner surface has the retaining ring of feature structure |
| CN106233431A (en) * | 2014-04-22 | 2016-12-14 | 应用材料公司 | Inner surface has the retainer ring of facet |
| WO2024049890A1 (en) * | 2022-09-01 | 2024-03-07 | Applied Materials, Inc. | Retainer for chemical mechanical polishing carrier head |
-
2009
- 2009-07-29 CN CN2009101590310A patent/CN101987430A/en active Pending
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103158061A (en) * | 2011-12-14 | 2013-06-19 | 有研半导体材料股份有限公司 | Wafer mounting ring for fixing silicon wafer |
| CN106233431B (en) * | 2014-04-22 | 2020-05-01 | 应用材料公司 | Retaining ring with facets on its inner surface, carrier head and polishing method using the retaining ring |
| US11682561B2 (en) | 2014-04-22 | 2023-06-20 | Applied Materials, Inc. | Retaining ring having inner surfaces with facets |
| CN106233431A (en) * | 2014-04-22 | 2016-12-14 | 应用材料公司 | Inner surface has the retainer ring of facet |
| KR20160145786A (en) * | 2014-04-22 | 2016-12-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with facets |
| KR102416432B1 (en) * | 2014-04-22 | 2022-07-01 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with facets |
| US11056350B2 (en) | 2014-04-22 | 2021-07-06 | Applied Materials, Inc. | Retaining ring having inner surfaces with facets |
| CN111451929A (en) * | 2014-04-22 | 2020-07-28 | 应用材料公司 | Retaining ring with facets on its inner surface, carrier head and polishing method using the retaining ring |
| TWI717353B (en) * | 2015-05-29 | 2021-02-01 | 美商應用材料股份有限公司 | Retaining ring having inner surfaces with features |
| US11453099B2 (en) | 2015-05-29 | 2022-09-27 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
| EP3302877A4 (en) * | 2015-05-29 | 2019-01-02 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
| CN112621560A (en) * | 2015-05-29 | 2021-04-09 | 应用材料公司 | Retaining ring with features on the inner surface |
| JP2018517574A (en) * | 2015-05-29 | 2018-07-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Retaining ring having an inner surface including features |
| JP2021185013A (en) * | 2015-05-29 | 2021-12-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | Retaining ring having inner surfaces with features |
| KR20180004127A (en) * | 2015-05-29 | 2018-01-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with features |
| US10500695B2 (en) | 2015-05-29 | 2019-12-10 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
| KR102461965B1 (en) * | 2015-05-29 | 2022-11-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with features |
| KR20220150435A (en) * | 2015-05-29 | 2022-11-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with features |
| JP7232285B2 (en) | 2015-05-29 | 2023-03-02 | アプライド マテリアルズ インコーポレイテッド | A retaining ring having an inner surface containing features |
| CN106181752A (en) * | 2015-05-29 | 2016-12-07 | 应用材料公司 | Inner surface has the retaining ring of feature structure |
| KR102624126B1 (en) * | 2015-05-29 | 2024-01-12 | 어플라이드 머티어리얼스, 인코포레이티드 | Retaining ring having inner surfaces with features |
| WO2024049890A1 (en) * | 2022-09-01 | 2024-03-07 | Applied Materials, Inc. | Retainer for chemical mechanical polishing carrier head |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI603813B (en) | Grinding tool and method of manufacturing the same | |
| CN108705422B (en) | Vacuum adsorption pad and substrate holding device | |
| US9287127B2 (en) | Wafer back-side polishing system and method for integrated circuit device manufacturing processes | |
| CN101987430A (en) | Fixing ring for chemically and mechanically grinding | |
| CN203726355U (en) | Grinding wheel for chamfering edge of large-diameter silicon carbide wafer | |
| CN100578739C (en) | Method for polishing chemical machinery | |
| US20160074995A1 (en) | Chemical mechanical polishing conditioner with brushes | |
| CN202367583U (en) | Chemical-mechanical polishing device | |
| CN203887683U (en) | Grinding head and grinding device | |
| CN102371532B (en) | Reworking method for chemical mechanical lapping process | |
| CN102814725B (en) | A kind of chemical and mechanical grinding method | |
| TW200621924A (en) | Abrasive particles, polishing slurry, and producing method thereof | |
| CN110517951B (en) | Cleaning method for improving micro-scratch of wafer before STI (shallow trench isolation) grinding | |
| CN201287300Y (en) | Polishing pad | |
| US20120264303A1 (en) | Chemical mechanical polishing slurry, system and method | |
| CN108284383B (en) | Chemical mechanical polishing device and chemical mechanical polishing method | |
| CN103009236A (en) | Method and apparatus for performing a polishing process in semiconductor fabrication | |
| CN203887682U (en) | Grinding head and grinding device | |
| CN202825547U (en) | Grinding pad finishing plate | |
| MY146813A (en) | Method of manufacturing a substrate for a mask blank, method of manufacturing a mask blank, and method of manufacturing a mask | |
| TWM589611U (en) | Wafer holder for chemical mechanical polishing | |
| CN206764552U (en) | Pedestal microscope carrier, base assembly and lapping device | |
| CN219465854U (en) | A grind skin subassembly for semiconductor device | |
| CN203918744U (en) | A kind of grinding pad regulator | |
| CN201231446Y (en) | Cleaning cushion for chemical and mechanical grinding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110323 |