CN101962775B - Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof - Google Patents
Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof Download PDFInfo
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- CN101962775B CN101962775B CN201010296599XA CN201010296599A CN101962775B CN 101962775 B CN101962775 B CN 101962775B CN 201010296599X A CN201010296599X A CN 201010296599XA CN 201010296599 A CN201010296599 A CN 201010296599A CN 101962775 B CN101962775 B CN 101962775B
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- sulfuric acid
- micro
- etching solution
- ydrogen peroxide
- stablizer
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- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title claims abstract description 91
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000003381 stabilizer Substances 0.000 title abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000001412 amines Chemical class 0.000 claims abstract description 15
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 54
- 150000002978 peroxides Chemical class 0.000 claims description 42
- 150000001875 compounds Chemical class 0.000 claims description 6
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 6
- -1 terepthaloyl moietie Chemical compound 0.000 claims description 6
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 5
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 3
- HCAJEUSONLESMK-UHFFFAOYSA-N cyclohexylsulfamic acid Chemical compound OS(=O)(=O)NC1CCCCC1 HCAJEUSONLESMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 description 19
- 125000003368 amide group Chemical group 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 230000005764 inhibitory process Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QMBDPPLSBOIXKA-UHFFFAOYSA-N N,N-dimethylmethanamine phenylmethanamine Chemical compound C1(=CC=CC=C1)CN.CN(C)C QMBDPPLSBOIXKA-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- ICJBPZBRDLONIF-UHFFFAOYSA-N hexane-1,1,1,2,2,3-hexol Chemical compound CCCC(O)C(O)(O)C(O)(O)O ICJBPZBRDLONIF-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention is applied in the field of microetching, and provides a sulfuric acid/hydrogen peroxide microetchant stabilizer and a preparation method thereof. The sulfuric acid/hydrogen peroxide microetchant stabilizer comprises the following components in percentage by weight: 3 to 6 percent of alcohol, 10 to 15 percent of organic amine, 2 to 5 percent of sulfonic acid and 40 to 85 percent of water. High-negativity O and N atoms of the alcohol, the organic amine and the sulfonic acid in the stabilizer form hydrogen bonds with free groups [HO.2] decomposed by hydrogen peroxide, so the sulfuric acid/hydrogen peroxide microetchant stabilizer effectively reduces the activity of the [HO.2], greatly reduces the decomposition of the hydrogen peroxide, maintains the concentration of the hydrogen peroxide in microetchant, and ensures stable microetching rate in the microetching process of the sulfuric acid/hydrogen peroxide (H2SO4/H2O2) microetchant, and smooth, uniform and non-black board surfaces after the microetching.
Description
Technical field
The invention belongs to little erosion field, relate in particular to a kind of sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer and preparation method thereof.
Background technology
In the printed circuit board course of processing, many technologies all need be carried out little loss pre-treatment, electroless copper plating, electric plating of whole board, graphic plating, the black oxidation of internal layer, hot air leveling or the like.The quality of little loss effect often influences the quality of next process.H
2SO
4/ H
2O
2Advantages such as micro-etching solution is more superior a kind of, and it has little erosion constant rate, and it is big to hold the copper amount, and aftertreatment is simple, and is pollution-free, but H
2SO
4/ H
2O
2Ydrogen peroxide 50 decomposes easily in the system, can make plate face blackout, and little erosion is inhomogeneous, thereby has improved the cost and the quantity discharged of material greatly, and the cl ions of trace also can make speed descend in the water, therefore, and H
2SO
4/ H
2O
2Being decomposed into of ydrogen peroxide 50 influences H in the micro-etching solution
2SO
4/ H
2O
2The big problem that micro-etching solution is used.
Summary of the invention
In view of this, the embodiment of the invention provides sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, solves in the prior art owing to decomposing hydrogen dioxide solution causes the technical problem that etching speed is unstable, the etching panel turns black.
The embodiment of the invention is achieved in that
A kind of sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, said sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer comprises following components in weight percentage content:
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer of the embodiment of the invention,
The sulfuric acid of the embodiment of the invention/ydrogen peroxide 50 micro-etching solution stablizer is through the free group [HO of strong negativity O, N atom and the decomposing hydrogen dioxide solution of alcohol, organic amine and sulfonic acid in the stablizer
2] form hydrogen bond, effectively reduced [HO
2] activity, significantly reduced the decomposition of ydrogen peroxide 50, kept the concentration of ydrogen peroxide 50 in the micro-etching solution, simultaneously, the stablizer of present embodiment also has good resistance effect to cl ions.Therefore, the stablizer of present embodiment guarantees at sulfuric acid/ydrogen peroxide 50 (H
2SO
4/ H
2O
2) in little erosion process of micro-etching solution, little erosion rate stabilization, after little erosion, the plate face is smooth, evenly do not turn black.
The sulfuric acid of the embodiment of the invention/ydrogen peroxide 50 micro-etching solution stablizer preparation method, simple to operate, with low cost, free from environmental pollution, be fit to suitability for industrialized production.
Description of drawings
Fig. 1 is the etching effect figure of the embodiment of the invention and Comparative Examples.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, and this sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer comprises following components in weight percentage content:
At sulfuric acid/ydrogen peroxide 50 (H
2SO
4/ H
2O
2) in the micro-etching solution, ydrogen peroxide 50 can decompose.H
2O
2Decomposition course be:
H
2O
2→2OH
(soon) reaction below taking place then:
OH+H
2O
2→H
2O+HO
2
2HO
2→H
2O
2+O
2
Particularly, the alcohol of the embodiment of the invention comprises various alcohol, and for example monohydroxy-alcohol, divalent alcohol or polyvalent alcohol use divalent alcohol or polyvalent alcohol, requires between the hydroxyl on divalent alcohol or the polyvalent alcohol not generation space inhibition.For example ethanol, propyl alcohol, 1,4 butyleneglycol, terepthaloyl moietie, propyl carbinol, Ucar 35, hexan-hexol are preferably in 1,4 butyleneglycol, terepthaloyl moietie, propyl carbinol, the Ucar 35 one or more, use two or more alcohol, and mass ratio separately is restriction not.The alcohol of the embodiment of the invention; Also comprise the alcohol that contains sulfonic group or amido; Thanomin for example, but generation space inhibition not between hydroxyl and sulfonic group or the amido, for example hydroxyl not can with sulfonic group generation space inhibition or hydroxyl not can with amido generation space inhibition.
The organic amine of the embodiment of the invention comprises one or more in monoamine, diamine and the polyamine; For example; Methylamine, ethamine, aniline, benzylamine, triethylene diamine, triethylamine, trimethylammonium benzylamine, dimethylethanolamine, methylenediphenyl diamines, PAH and polymine.But contain the organic amine of an amido, the organic amine of two or more amidos, comprise two or more amidos on the organic amine, require not exist between the amido steric restriction effect.Be preferably in thanomin, diethylolamine, n-Butyl Amine 99, the NSC 9824 one or more, use two or more organic amines, mass ratio separately is restriction not.The organic amine of the embodiment of the invention also comprises and contains for example amidosulfonic acid of hydroxyl or sulfonic organic amine, but generation space inhibition not between amido and hydroxyl or the sulfonic group, for example amido and hydroxyl, amido and sulfonic group can the generation space inhibitions.
The sulfonic group compound of the embodiment of the invention comprise in one in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid or more than; Contain a sulfonic group, two or more sulfonic sulfonic group compounds.Use comprises two or more sulfonic sulfonic acid, requires between the sulfonic group not generation space inhibition.Be preferably in hexanaphthene sulfonic acid, amidosulfonic acid, the Trimetylene sulfonic acid one or more, use two or more sulfonic group compounds, mass ratio separately is restriction not.The sulfonic group compound of the embodiment of the invention also comprises the sulfonic acid that contains hydroxyl or amido, cyclohexylamine sulfonic acid for example, Trimetylene sulfonic acid, tosic acid, amidosulfonic acid.But generation space inhibition not between sulfonic group and hydroxyl or the amido for example can the generation space inhibition between sulfonic group and hydroxyl, sulfonic group and the amido.
Further, the H of the embodiment of the invention
2SO
4/ H
2O
2In the micro-etching solution stablizer, comprise that also weight percentage is the sulfuric acid of 2-5%, vitriolic concentration is restriction not, is preferably 98% sulfuric acid.Through in stablizer, adding sulfuric acid, can prevent the volatilization of organic amine, keep the effect of embodiment of the invention stablizer.Make the stablizer and the sulfuric acid/ydrogen peroxide 50 micro-etching solution of the embodiment of the invention have good intermiscibility simultaneously.
Sulfuric acid/ydrogen peroxide 50 (H of the embodiment of the invention
2SO
4/ H
2O
2) the micro-etching solution stablizer, through the free group [HO of the strong negativity O in the stablizer, N atom and decomposing hydrogen dioxide solution
2] form hydrogen bond, significantly reduced the decomposition of ydrogen peroxide 50, kept the concentration of ydrogen peroxide 50 in the micro-etching solution, simultaneously, the stablizer of the embodiment of the invention has good resistance effect to the cl ions in the micro-etching solution, guarantees at sulfuric acid/ydrogen peroxide 50 (H
2SO
4/ H
2O
2) in little erosion process of micro-etching solution, little erosion rate stabilization, after little erosion, the plate face is smooth, all with not turn black.
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, and step is following:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer of the embodiment of the invention,
Further, among the preparation method of the sulfuric acid of the embodiment of the invention/ydrogen peroxide 50 micro-etching solution stablizer, after the said components mixing, add the sulfuric acid of 3-5% again, this vitriolic concentration is restriction not, is preferably 98% sulfuric acid.Above-mentioned stir process is carried out at normal temperatures and pressures, and the time is restriction not, preferably under the 0.8-1.3 atmospheric pressure, stirs 30-60 minute.
The preparation method of the sulfuric acid of the embodiment of the invention/ydrogen peroxide 50 micro-etching solution stablizer, simple to operate, raw materials cost is cheap, is suitable for suitability for industrialized production.
Sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer below in conjunction with specific embodiment is set forth in detail.
Embodiment one
The micro-etching solution stablizer of present embodiment, its component and weight percent are following:
1,4 butyleneglycol 3%
Thanomin 3%, n-Butyl Amine 99 7%
Amidosulfonic acid 2%
Sulfuric acid 3%
Water 83%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures little erosion speed when temperature is 30 ℃.
Embodiment two
The micro-etching solution stablizer of present embodiment, its component and weight percent are following:
1,4 butyleneglycol 5%
NSC 9824 12%
Trimetylene sulfonic acid 3%
Sulfuric acid 3%
Water 77%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures little erosion speed when temperature is 30 ℃.
Embodiment three
A kind of micro-etching solution stablizer, its component and weight percent are following:
Terepthaloyl moietie 5%
Thanomin 8%, n-Butyl Amine 99 7%
Cyclohexylamine sulfonic acid 5%
Sulfuric acid 5%
Water 70%.
According to the ratio preparation, be added to H by 0.5-2 ‰
2O
2Concentration is 12g/L, H
2SO
4Concentration is when 30 ℃ of temperature, to measure little erosion speed in the micro-etching solution of 120g/L.
Comparative Examples
Use H
2O
2Concentration is 12g/L, H
2SO
4Concentration be the micro-etching solution of 120g/L as blank, when temperature is 30 ℃, measure little erosion speed.Little erosion speed is 7, and plate face blackout has seal, when opening cylinder with tap water, and plate face blackout, little erosion speed is 0.
See also Fig. 1, Fig. 1 shows the embodiment of the invention and the little erosion effect of Comparative Examples situation, in embodiment one, embodiment two and embodiment three; Increase along with stabilizer concentration of the present invention; Little erosion speed of micro-etching solution is more than 10, and little erosion speed of micro-etching solution is increasing gradually, and ascendant trend is in line.In Comparative Examples, do not add stablizer of the present invention, so its little erosion speed has only 7.This micro-etching solution stablizer that proves absolutely the embodiment of the invention has active effect to reducing the decomposition of ydrogen peroxide 50.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer, said sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer comprises following components in weight percentage content:
2. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that, said alcohol be in monohydroxy-alcohol, divalent alcohol or the polyvalent alcohol more than one.
3. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that said alcohol is more than one in 1,4 butyleneglycol, terepthaloyl moietie, propyl carbinol, the Ucar 35.
4. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that said organic amine is more than one in monoamine, diamine and the polyamine.
5. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that said organic amine is more than one in thanomin, diethylolamine, n-Butyl Amine 99, the NSC 9824.
6. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that, said sulfonic group compound is more than one in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid.
7. sulfuric acid as claimed in claim 1/ydrogen peroxide 50 micro-etching solution stablizer is characterized in that, said sulfonic group compound is more than one in cyclohexylamine sulfonic acid, the Trimetylene sulfonic acid.
8. sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer preparation method comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains sulfuric acid/ydrogen peroxide 50 micro-etching solution stablizer,
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| CN103451716A (en) * | 2012-05-31 | 2013-12-18 | 际华三五二二装具饰品有限公司 | Plating layer stripping corrosion solution |
| CN103572291B (en) * | 2012-07-25 | 2015-09-30 | 苏州协鑫光伏科技有限公司 | Electroplating diamond wire saw coating corrosive fluid and scroll saw connection of broken lines method |
| CN104532240A (en) * | 2014-12-31 | 2015-04-22 | 东莞市富默克化工有限公司 | Coarse micro-etching agent used in circuit board and preparation method of coarse micro-etching agent |
| CN105734571A (en) * | 2016-04-21 | 2016-07-06 | 广州恩源化工科技有限公司 | Metal surface micro-etching liquid |
| CN107142711A (en) * | 2017-06-21 | 2017-09-08 | 清远市金沣顺助剂有限公司 | A kind of hydrogen peroxide cold bleaching catalyst and its preparation method and application |
| CN110856348A (en) * | 2019-10-09 | 2020-02-28 | 广东利尔化学有限公司 | Neutralizing and reducing agent for PCB (printed circuit board) glue removal post-treatment |
| CN112831774A (en) * | 2019-11-25 | 2021-05-25 | 惠东县建祥电子科技有限公司 | Copper deposition method suitable for copper-clad plate |
| CN111041487A (en) * | 2019-12-31 | 2020-04-21 | 苏州天承化工有限公司 | Environment-friendly PCB electroplating rack copper stripping liquid and copper stripping method using same |
| CN111020586A (en) * | 2019-12-31 | 2020-04-17 | 苏州天承化工有限公司 | Environment-friendly rack stripping solution for stripping copper and tin and copper and tin stripping method using environment-friendly rack stripping solution |
| CN112342546A (en) * | 2020-10-23 | 2021-02-09 | 珠海隆康电子科技有限公司 | Microetching stabilizer and preparation method thereof |
| CN113355674A (en) * | 2021-07-12 | 2021-09-07 | 广东恒锦通科技有限公司 | Stripping and hanging frame stabilizing agent |
| CN114045495A (en) * | 2021-10-26 | 2022-02-15 | Tcl华星光电技术有限公司 | Copper etching solution and manufacturing method of array substrate |
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| BE791457A (en) * | 1971-11-18 | 1973-05-16 | Du Pont | STABILIZED ACID SOLUTIONS OF OXYGENATED WATER |
| JP2004300161A (en) * | 2004-07-27 | 2004-10-28 | Mitsubishi Rayon Co Ltd | Method for producing aminosulfonic acid-n,n-diacetic acid and its alkali metal salt |
| CN100368598C (en) * | 2005-08-09 | 2008-02-13 | 广东省石油化工研究院 | Copper or copper alloy surface tiny-etching treatment fluid for smoothing |
| CN101093363A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Cleaning liquid in use for removing photoresist on integrate circuit |
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