CN101962775A - Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof - Google Patents
Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof Download PDFInfo
- Publication number
- CN101962775A CN101962775A CN 201010296599 CN201010296599A CN101962775A CN 101962775 A CN101962775 A CN 101962775A CN 201010296599 CN201010296599 CN 201010296599 CN 201010296599 A CN201010296599 A CN 201010296599A CN 101962775 A CN101962775 A CN 101962775A
- Authority
- CN
- China
- Prior art keywords
- hydrogen peroxide
- sulfuric acid
- etching solution
- micro
- stablizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 113
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000003381 stabilizer Substances 0.000 title abstract description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 150000001412 amines Chemical class 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 58
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 6
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 5
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 5
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 3
- -1 aryl sulfonic acid Chemical compound 0.000 claims description 3
- HCAJEUSONLESMK-UHFFFAOYSA-N cyclohexylsulfamic acid Chemical compound OS(=O)(=O)NC1CCCCC1 HCAJEUSONLESMK-UHFFFAOYSA-N 0.000 claims description 3
- DLTBAYKGXREKMW-UHFFFAOYSA-N cyclopropanesulfonic acid Chemical compound OS(=O)(=O)C1CC1 DLTBAYKGXREKMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 20
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 8
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 5
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
- 125000003368 amide group Chemical group 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 5
- 241000370738 Chlorion Species 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QMBDPPLSBOIXKA-UHFFFAOYSA-N N,N-dimethylmethanamine phenylmethanamine Chemical compound C1(=CC=CC=C1)CN.CN(C)C QMBDPPLSBOIXKA-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- ICJBPZBRDLONIF-UHFFFAOYSA-N hexane-1,1,1,2,2,3-hexol Chemical compound CCCC(O)C(O)(O)C(O)(O)O ICJBPZBRDLONIF-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- ing And Chemical Polishing (AREA)
Abstract
The invention is applied in the field of microetching, and provides a sulfuric acid/hydrogen peroxide microetchant stabilizer and a preparation method thereof. The sulfuric acid/hydrogen peroxide microetchant stabilizer comprises the following components in percentage by weight: 3 to 6 percent of alcohol, 10 to 15 percent of organic amine, 2 to 5 percent of sulfonic acid and 40 to 85 percent of water. High-negativity O and N atoms of the alcohol, the organic amine and the sulfonic acid in the stabilizer form hydrogen bonds with free groups [HO.2] decomposed by hydrogen peroxide, so the sulfuric acid/hydrogen peroxide microetchant stabilizer effectively reduces the activity of the [HO.2], greatly reduces the decomposition of the hydrogen peroxide, maintains the concentration of the hydrogen peroxide in microetchant, and ensures stable microetching rate in the microetching process of the sulfuric acid/hydrogen peroxide (H2SO4/H2O2) microetchant, and smooth, uniform and non-black board surfaces after the microetching.
Description
Technical field
The invention belongs to the microetch field, relate in particular to a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer and preparation method thereof.
Background technology
In the printed circuit board course of processing, many technologies all need to carry out the microetch pre-treatment, electroless copper plating, electric plating of whole board, graphic plating, the black oxidation of internal layer, hot air leveling or the like.The quality of microetch effect often influences the quality of next process.H
2SO
4/ H
2O
2Advantages such as micro-etching solution is more superior a kind of, and it has the microetch constant rate, and it is big to hold the copper amount, and aftertreatment is simple, and is pollution-free, but H
2SO
4/ H
2O
2Hydrogen peroxide decomposes easily in the system, can make plate face blackout, and microetch is inhomogeneous, thereby has improved the cost and the quantity discharged of material greatly, and the chlorion of trace also can make speed descend in the water, therefore, and H
2SO
4/ H
2O
2Being decomposed into of hydrogen peroxide influences H in the micro-etching solution
2SO
4/ H
2O
2The big problem that micro-etching solution is used.
Summary of the invention
In view of this, the embodiment of the invention provides sulfuric acid/hydrogen peroxide micro-etching solution stablizer, solves the technical problem that causes etching speed instability, etching panel blackout in the prior art owing to decomposing hydrogen dioxide solution.
The embodiment of the invention is achieved in that
A kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/hydrogen peroxide micro-etching solution stablizer of the embodiment of the invention,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer is by the free group [HO of strong negativity O, N atom and the decomposing hydrogen dioxide solution of alcohol, organic amine and sulfonic acid in the stablizer
2] form hydrogen bond, effectively reduced [HO
2] activity, significantly reduced the decomposition of hydrogen peroxide, kept the concentration of hydrogen peroxide in the micro-etching solution, simultaneously, the stablizer of present embodiment also has good resistance effect to chlorion.Therefore, the stablizer of present embodiment guarantees at sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the microetch process of micro-etching solution, the microetch rate stabilization, after the microetch, the plate face is smooth, evenly do not turn black.
The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer preparation method, simple to operate, with low cost, free from environmental pollution, be fit to suitability for industrialized production.
Description of drawings
Fig. 1 is the etching effect figure of the embodiment of the invention and Comparative Examples.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, and this sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
At sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the micro-etching solution, hydrogen peroxide can decompose.H
2O
2Decomposition course be:
H
2O
2→2OH
·
Following (soon) reaction takes place then:
OH
·+H
2O
2→H
2O+HO
· 2
2HO
· 2→H
2O
2+O
2
Hydrogen peroxide can produce free radical [HO in decomposition
2], the decomposing hydrogen dioxide solution speed of response will depend on living radical [HO
2] quantity.[HO
2] structure be [O-O-H], O-H key easy fracture forms [O
2] and [H].The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer adds alcohol, organic amine, sulfonic acid.Contain strong negative O atom in the hydroxyl [OH] of alcohol, have strong electrophilic function; Have strong negative N atom in the amido of organic amine [NH-], have strong electrophilic function; Sulfonic group [SO in the sulfonic acid
3H] contain strong negative O atom, have more high-strength electrophilic function.Above-mentioned strong negative O, N atom can with [HO
2] in the hydrogen evolution hydrogen bond, the electronic cloud on [O-O] will to [O-H] skew, thereby strengthened [O-H] key, reduced [HO
2] activity, significantly reduced the decomposition of hydrogen peroxide.
Particularly, the alcohol of the embodiment of the invention comprises various alcohol, and for example monohydroxy-alcohol, dibasic alcohol or polyvalent alcohol use dibasic alcohol or polyvalent alcohol, require not take place between the hydroxyl on dibasic alcohol or the polyvalent alcohol steric restriction effect.For example ethanol, propyl alcohol, 1,4 butyleneglycol, ethylene glycol, propyl carbinol, propylene glycol, hexan-hexol are preferably in 1,4 butyleneglycol, ethylene glycol, propyl carbinol, the propylene glycol one or more, use two or more alcohol, and mass ratio separately without limits.The alcohol of the embodiment of the invention, also comprise the alcohol that contains sulfonic group or amido, thanomin for example, but the steric restriction effect does not take place between hydroxyl and sulfonic group or the amido, for example hydroxyl not can with sulfonic group generation steric restriction effect or hydroxyl not can with the effect of amido generation steric restriction.
The organic amine of the embodiment of the invention comprises one or more in monoamine, diamine and the polyamine, for example, methylamine, ethamine, aniline, benzylamine, triethylene diamine, triethylamine, trimethylammonium benzylamine, dimethylethanolamine, methylenediphenyl diamines, PAH and polymine.But comprise two or more amidos on the organic amine, require not exist between the amido steric restriction effect.Be preferably in thanomin, diethanolamine, n-Butyl Amine 99, the n-octyl amine one or more, use two or more organic amines, mass ratio separately without limits.The organic amine of the embodiment of the invention comprises also and contains for example amidosulfonic acid of hydroxyl or sulfonic organic amine, but the steric restriction effect does not take place between amido and hydroxyl or the sulfonic group that for example amido and hydroxyl, amido and sulfonic group the steric restriction effect can not take place.
The sulfonic group compound of the embodiment of the invention comprise in one in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid or more than; Contain a sulfonic group, two or more sulfonic sulfonic group compounds.Use comprises two or more sulfonic sulfonic acid, requires not take place between the sulfonic group steric restriction effect.Be preferably in hexanaphthene sulfonic acid, amidosulfonic acid, cyclopropane sulfonic acid, cyclohexylamine sulfonic acid and the tosic acid one or more, use two or more sulfonic group compounds, mass ratio separately without limits.The sulfonic group compound of the embodiment of the invention also comprises the sulfonic acid that contains hydroxyl or amido, but between sulfonic group and hydroxyl or the amido steric restriction effect does not take place, for example the steric restriction effect can not take place between sulfonic group and hydroxyl, sulfonic group and the amido.
Further, the H of the embodiment of the invention
2SO
4/ H
2O
2In the micro-etching solution stablizer, comprise that also weight percentage is the sulfuric acid of 2-5%, vitriolic concentration is preferably 98% sulfuric acid without limits.By in stablizer, adding sulfuric acid, can prevent the volatilization of organic amine, keep the effect of embodiment of the invention stablizer.Make the stablizer and the sulfuric acid/hydrogen peroxide micro-etching solution of the embodiment of the invention have good intermiscibility simultaneously.
Sulfuric acid/hydrogen peroxide (H of the embodiment of the invention
2SO
4/ H
2O
2) the micro-etching solution stablizer, by the free group [HO of the strong negativity O in the stablizer, N atom and decomposing hydrogen dioxide solution
2] form hydrogen bond, significantly reduced the decomposition of hydrogen peroxide, kept the concentration of hydrogen peroxide in the micro-etching solution, simultaneously, the stablizer of the embodiment of the invention has good resistance effect to the chlorion in the micro-etching solution, guarantees at sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the microetch process of micro-etching solution, the microetch rate stabilization, after the microetch, the plate face is smooth, all with not turn black.
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, and step is as follows:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/hydrogen peroxide micro-etching solution stablizer of the embodiment of the invention,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
Further, among the preparation method of the sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer, after the said components mixing, add the sulfuric acid of 3-5% again, this vitriolic concentration is preferably 98% sulfuric acid without limits.Above-mentioned stir process is carried out at normal temperatures and pressures, and the time preferably under the 0.8-1.3 atmospheric pressure, stirred 30-60 minute without limits.
The preparation method of the sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer, simple to operate, raw materials cost is cheap, is suitable for suitability for industrialized production.
Sulfuric acid/hydrogen peroxide micro-etching solution stablizer below in conjunction with specific embodiment is described in detail.
Embodiment one
The micro-etching solution stablizer of present embodiment, its component and weight percent are as follows:
1,4 butyleneglycol 3%
Thanomin 3%, n-Butyl Amine 99 7%
Amidosulfonic acid 2%
Sulfuric acid 3%
Water 83%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures microetch speed when temperature is 30 ℃.
Embodiment two
The micro-etching solution stablizer of present embodiment, its component and weight percent are as follows:
1,4 butyleneglycol 5%
N-octyl amine 12%
Cyclopropane sulfonic acid 3%
Sulfuric acid 3%
Water 77%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures microetch speed when temperature is 30 ℃.
Embodiment three
A kind of micro-etching solution stablizer, its component and weight percent are as follows:
Ethylene glycol 5%
Thanomin 8%, n-Butyl Amine 99 7%
Cyclohexylamine sulfonic acid 5%
Sulfuric acid 5%
Water 70%.
According to the ratio preparation, be added to H by 0.5-2 ‰
2O
2Concentration is 12g/L, H
2SO
4Concentration is to measure microetch speed in the micro-etching solution of 120g/L when 30 ℃ of temperature.
Comparative Examples
Use H
2O
2Concentration is 12g/L, H
2SO
4Concentration be the micro-etching solution of 120g/L as blank, when temperature is 30 ℃, measure microetch speed.Microetch speed is 7, and plate face blackout has seal, when opening cylinder with tap water, and plate face blackout, microetch speed is 0.
See also Fig. 1, Fig. 1 shows the embodiment of the invention and Comparative Examples microetch effect situation, in embodiment one, embodiment two and embodiment three, the microetch speed of micro-etching solution is more than 10, along with the increase of stabilizer concentration of the present invention, the microetch speed of micro-etching solution is increasing gradually, and ascendant trend is in line.In Comparative Examples, do not add stablizer of the present invention, so its microetch speed has only 7.This micro-etching solution stablizer that proves absolutely the embodiment of the invention has active effect to reducing the decomposition of hydrogen peroxide.In the Comparative Examples, along with the carrying out of time, the microetch speed of micro-etching solution reduces (this does not show in the accompanying drawings) gradually.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. sulfuric acid/hydrogen peroxide micro-etching solution stablizer, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
2. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described alcohol be in monohydroxy-alcohol, dibasic alcohol or the polyvalent alcohol one or more.
3. sulfuric acid as claimed in claim 2/hydrogen peroxide micro-etching solution stablizer is characterized in that described alcohol is one or more in 1,4 butyleneglycol, ethylene glycol, propyl carbinol, the propylene glycol.
4. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that described organic amine is one or more in monoamine, diamine and the polyamine.
5. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that described organic amine is one or more in thanomin, diethanolamine, n-Butyl Amine 99, the n-octyl amine.
6. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfonic group compound is one or more in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid.
7. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfonic group compound is one or more in cyclohexylamine sulfonic acid, amidosulfonic acid, the cyclopropane sulfonic acid.
8. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises that also weight percentage is the sulfuric acid of 3-5%.
9. sulfuric acid/hydrogen peroxide micro-etching solution stablizer preparation method comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains sulfuric acid/hydrogen peroxide micro-etching solution stablizer,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
10. sulfuric acid as claimed in claim 7/hydrogen peroxide micro-etching solution stablizer preparation method is characterized in that, after said components is mixed, adds the sulfuric acid of 3-5% again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010296599XA CN101962775B (en) | 2010-09-29 | 2010-09-29 | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010296599XA CN101962775B (en) | 2010-09-29 | 2010-09-29 | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101962775A true CN101962775A (en) | 2011-02-02 |
| CN101962775B CN101962775B (en) | 2012-06-27 |
Family
ID=43515821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010296599XA Active CN101962775B (en) | 2010-09-29 | 2010-09-29 | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101962775B (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451716A (en) * | 2012-05-31 | 2013-12-18 | 际华三五二二装具饰品有限公司 | Plating layer stripping corrosion solution |
| CN103572291A (en) * | 2012-07-25 | 2014-02-12 | 苏州协鑫光伏科技有限公司 | Corrosive liquid for electroplated diamond wire saw coating and wire saw broken-wire connection method |
| CN104532240A (en) * | 2014-12-31 | 2015-04-22 | 东莞市富默克化工有限公司 | Coarse micro-etching agent used in circuit board and preparation method of coarse micro-etching agent |
| CN105734571A (en) * | 2016-04-21 | 2016-07-06 | 广州恩源化工科技有限公司 | Metal surface micro-etching liquid |
| CN107142711A (en) * | 2017-06-21 | 2017-09-08 | 清远市金沣顺助剂有限公司 | A kind of hydrogen peroxide cold bleaching catalyst and its preparation method and application |
| CN110856348A (en) * | 2019-10-09 | 2020-02-28 | 广东利尔化学有限公司 | Neutralizing and reducing agent for PCB (printed circuit board) glue removal post-treatment |
| CN111020586A (en) * | 2019-12-31 | 2020-04-17 | 苏州天承化工有限公司 | Environment-friendly rack stripping solution for stripping copper and tin and copper and tin stripping method using environment-friendly rack stripping solution |
| CN111041487A (en) * | 2019-12-31 | 2020-04-21 | 苏州天承化工有限公司 | Environment-friendly PCB electroplating rack copper stripping liquid and copper stripping method using same |
| CN112342546A (en) * | 2020-10-23 | 2021-02-09 | 珠海隆康电子科技有限公司 | Microetching stabilizer and preparation method thereof |
| CN112831774A (en) * | 2019-11-25 | 2021-05-25 | 惠东县建祥电子科技有限公司 | Copper deposition method suitable for copper-clad plate |
| CN113355674A (en) * | 2021-07-12 | 2021-09-07 | 广东恒锦通科技有限公司 | Stripping and hanging frame stabilizing agent |
| CN114045495A (en) * | 2021-10-26 | 2022-02-15 | Tcl华星光电技术有限公司 | Copper etching solution and manufacturing method of array substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801512A (en) * | 1971-11-18 | 1974-04-02 | Du Pont | Stabilized acidic hydrogen peroxide solutions |
| JP2004300161A (en) * | 2004-07-27 | 2004-10-28 | Mitsubishi Rayon Co Ltd | Method for producing aminosulfonic acid-n,n-diacetic acid and its alkali metal salt |
| CN1730728A (en) * | 2005-08-09 | 2006-02-08 | 广东省石油化工研究院 | Copper or copper alloy surface tiny-etching treatment fluid for smoothing |
| CN101093363A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Cleaning liquid in use for removing photoresist on integrate circuit |
-
2010
- 2010-09-29 CN CN201010296599XA patent/CN101962775B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3801512A (en) * | 1971-11-18 | 1974-04-02 | Du Pont | Stabilized acidic hydrogen peroxide solutions |
| JP2004300161A (en) * | 2004-07-27 | 2004-10-28 | Mitsubishi Rayon Co Ltd | Method for producing aminosulfonic acid-n,n-diacetic acid and its alkali metal salt |
| CN1730728A (en) * | 2005-08-09 | 2006-02-08 | 广东省石油化工研究院 | Copper or copper alloy surface tiny-etching treatment fluid for smoothing |
| CN101093363A (en) * | 2006-06-23 | 2007-12-26 | 天津晶岭电子材料科技有限公司 | Cleaning liquid in use for removing photoresist on integrate circuit |
Non-Patent Citations (1)
| Title |
|---|
| 《广东化工》 20021231 李伟浩等 微蚀刻液中过氧化氢的稳定性探讨 21-22 1-10 , 第5期 2 * |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103451716A (en) * | 2012-05-31 | 2013-12-18 | 际华三五二二装具饰品有限公司 | Plating layer stripping corrosion solution |
| CN103572291A (en) * | 2012-07-25 | 2014-02-12 | 苏州协鑫光伏科技有限公司 | Corrosive liquid for electroplated diamond wire saw coating and wire saw broken-wire connection method |
| CN103572291B (en) * | 2012-07-25 | 2015-09-30 | 苏州协鑫光伏科技有限公司 | Electroplating diamond wire saw coating corrosive fluid and scroll saw connection of broken lines method |
| CN104532240A (en) * | 2014-12-31 | 2015-04-22 | 东莞市富默克化工有限公司 | Coarse micro-etching agent used in circuit board and preparation method of coarse micro-etching agent |
| CN105734571A (en) * | 2016-04-21 | 2016-07-06 | 广州恩源化工科技有限公司 | Metal surface micro-etching liquid |
| CN107142711A (en) * | 2017-06-21 | 2017-09-08 | 清远市金沣顺助剂有限公司 | A kind of hydrogen peroxide cold bleaching catalyst and its preparation method and application |
| CN110856348A (en) * | 2019-10-09 | 2020-02-28 | 广东利尔化学有限公司 | Neutralizing and reducing agent for PCB (printed circuit board) glue removal post-treatment |
| CN112831774A (en) * | 2019-11-25 | 2021-05-25 | 惠东县建祥电子科技有限公司 | Copper deposition method suitable for copper-clad plate |
| CN111020586A (en) * | 2019-12-31 | 2020-04-17 | 苏州天承化工有限公司 | Environment-friendly rack stripping solution for stripping copper and tin and copper and tin stripping method using environment-friendly rack stripping solution |
| CN111041487A (en) * | 2019-12-31 | 2020-04-21 | 苏州天承化工有限公司 | Environment-friendly PCB electroplating rack copper stripping liquid and copper stripping method using same |
| CN112342546A (en) * | 2020-10-23 | 2021-02-09 | 珠海隆康电子科技有限公司 | Microetching stabilizer and preparation method thereof |
| CN113355674A (en) * | 2021-07-12 | 2021-09-07 | 广东恒锦通科技有限公司 | Stripping and hanging frame stabilizing agent |
| CN114045495A (en) * | 2021-10-26 | 2022-02-15 | Tcl华星光电技术有限公司 | Copper etching solution and manufacturing method of array substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101962775B (en) | 2012-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101962775B (en) | Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof | |
| CN102492391B (en) | Monocomponent addition type silicone rubber packaging glue with strong cohesiveness and preparation method thereof | |
| CN102351341A (en) | Preparation and application of paint waste water treatment agents | |
| CN102876274B (en) | Glue for cutting process of solar cell silicon wafers | |
| CN109698040B (en) | Water-based electronic paste and preparation method thereof | |
| CN111647888A (en) | Copper etching solution with long etching life | |
| CN103263789A (en) | High-efficiency antifoaming agent and preparation method thereof | |
| CN111020586A (en) | Environment-friendly rack stripping solution for stripping copper and tin and copper and tin stripping method using environment-friendly rack stripping solution | |
| CN103555431A (en) | Printed circuit board cleaning agent and preparation method thereof | |
| CN103614249A (en) | Alkaline cleaning additive used after acid texturing of polycrystalline silicon wafers, and using method thereof | |
| CN105219545A (en) | A kind of clean-out system for electronic material and preparation method thereof | |
| CN104419297A (en) | Anti-corrosion dope for protecting magnesium alloy and preparation method thereof | |
| CN105441021A (en) | Preparation method of pouring sealant | |
| CN204151415U (en) | A kind of regenerating alkaline etching liquid circulating production line | |
| CN101774767B (en) | Glass substrate etching solution for flat display | |
| CN105728986B (en) | A kind of leave scaling powder | |
| CN104230174A (en) | Glass-thinning etching solution additive | |
| CN108203828A (en) | A kind of environmentally friendly hanger stripper of wiring board nitre hanger | |
| CN101812719B (en) | Low-alkalinity electrolytic deburring solution, preparation method and use method thereof | |
| CN106630719A (en) | Foaming agent | |
| CN105273107A (en) | Aging-resistant epoxidized trans-form natural rubber and preparation method thereof | |
| CN103555434A (en) | Quick circuit board cleaning agent and preparation method thereof | |
| CN111041487A (en) | Environment-friendly PCB electroplating rack copper stripping liquid and copper stripping method using same | |
| CN111117626B (en) | Flash etching liquid medicine and preparation method and application thereof | |
| JP6079434B2 (en) | Conductive copper ink composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: INNOQUICK ELECTRONICS TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SHENZHEN JECH TECHNOLOGY CO., LTD. Effective date: 20140625 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 518101 SHENZHEN, GUANGDONG PROVINCE TO: 629000 SUINING, SICHUAN PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20140625 Address after: 629000 No. 3 South Canal Road, Chuangxin Industrial Park, Suining, Sichuan Patentee after: Innoquick Electronics Technology Co., Ltd. Address before: 1, 3, room 15, 2 floor, COFCO real estate group, Baoan District, Baoan District, Guangdong, Shenzhen, 518101 Patentee before: ShenZhen JeCh Technology Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 629000 No. 3 South Canal Road, Suining Innovation Industrial Park, Sichuan Patentee after: Sichuan tronica electronic Polytron Technologies Inc Address before: 629000 No. 3 South Canal Road, Suining Innovation Industrial Park, Sichuan Patentee before: Innoquick Electronics Technology Co., Ltd. |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20180628 Address after: 518000 Guangdong, Shenzhen, Baoan District, Sha Tin Street, Xinqiao New Bridge Industrial Zone Xinfa two road 13 Factory 1 1, 2, 3, 2 Patentee after: ShenZhen JeCh Technology Co., Ltd. Address before: 629000 No. 3 South Canal Road, Suining Innovation Industrial Park, Sichuan Patentee before: Sichuan tronica electronic Polytron Technologies Inc |
|
| TR01 | Transfer of patent right |