CN101962775A - Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof - Google Patents
Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof Download PDFInfo
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- CN101962775A CN101962775A CN 201010296599 CN201010296599A CN101962775A CN 101962775 A CN101962775 A CN 101962775A CN 201010296599 CN201010296599 CN 201010296599 CN 201010296599 A CN201010296599 A CN 201010296599A CN 101962775 A CN101962775 A CN 101962775A
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- hydrogen peroxide
- sulfuric acid
- etching solution
- micro
- stablizer
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- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 112
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000003381 stabilizer Substances 0.000 title abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 62
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 150000001412 amines Chemical class 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 claims description 6
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 5
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 5
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 3
- -1 aryl sulfonic acid Chemical compound 0.000 claims description 3
- HCAJEUSONLESMK-UHFFFAOYSA-N cyclohexylsulfamic acid Chemical compound OS(=O)(=O)NC1CCCCC1 HCAJEUSONLESMK-UHFFFAOYSA-N 0.000 claims description 3
- DLTBAYKGXREKMW-UHFFFAOYSA-N cyclopropanesulfonic acid Chemical compound OS(=O)(=O)C1CC1 DLTBAYKGXREKMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000004615 ingredient Substances 0.000 claims description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 20
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 abstract description 7
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 5
- 239000001257 hydrogen Substances 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 5
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 3
- 150000001298 alcohols Chemical class 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 150000003460 sulfonic acids Chemical class 0.000 abstract 1
- 125000003368 amide group Chemical group 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 5
- 241000370738 Chlorion Species 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- WGQKYBSKWIADBV-UHFFFAOYSA-N benzylamine Chemical compound NCC1=CC=CC=C1 WGQKYBSKWIADBV-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QMBDPPLSBOIXKA-UHFFFAOYSA-N N,N-dimethylmethanamine phenylmethanamine Chemical compound C1(=CC=CC=C1)CN.CN(C)C QMBDPPLSBOIXKA-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 239000012972 dimethylethanolamine Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- ICJBPZBRDLONIF-UHFFFAOYSA-N hexane-1,1,1,2,2,3-hexol Chemical compound CCCC(O)C(O)(O)C(O)(O)O ICJBPZBRDLONIF-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明适用于微蚀领域，提供了一种硫酸/双氧水微蚀液稳定剂及其制备方法。该硫酸/双氧水微蚀液稳定剂包括如下重量百分含量的组分：醇3-6％，有机胺10-15％，磺酸2-5％，水40-85％。该硫酸/双氧水微蚀液稳定剂，通过稳定剂中醇、有机胺及磺酸的强负性O、N原子和双氧水分解的自由基团[HO·2]形成氢键，有效的降低了[HO·2]活性，大大减少了双氧水的分解，维持了微蚀液中双氧水的浓度，保证在硫酸/双氧水(H2SO4/H2O2)微蚀液的微蚀过程中，微蚀速率稳定，微蚀后，板面光滑、均匀不发黑。
The invention is applicable to the field of micro-etching, and provides a sulfuric acid/hydrogen peroxide micro-etching solution stabilizer and a preparation method thereof. The sulfuric acid/hydrogen peroxide microetching liquid stabilizer comprises the following components in weight percent: 3-6% of alcohol, 10-15% of organic amine, 2-5% of sulfonic acid and 40-85% of water. The sulfuric acid/hydrogen peroxide micro-etching solution stabilizer forms hydrogen bonds through the strong negative O and N atoms of alcohols, organic amines and sulfonic acids in the stabilizer and the free radicals [HO· 2 ] decomposed by hydrogen peroxide, effectively reducing the [ HO 2 ] activity, which greatly reduces the decomposition of hydrogen peroxide, maintains the concentration of hydrogen peroxide in the microetching solution, and ensures that the microetching process of sulfuric acid/hydrogen peroxide (H 2 SO 4 /H 2 O 2 ) microetching solution, The rate is stable. After micro-etching, the surface of the board is smooth, uniform and not black.
Description
Technical field
The invention belongs to the microetch field, relate in particular to a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer and preparation method thereof.
Background technology
In the printed circuit board course of processing, many technologies all need to carry out the microetch pre-treatment, electroless copper plating, electric plating of whole board, graphic plating, the black oxidation of internal layer, hot air leveling or the like.The quality of microetch effect often influences the quality of next process.H
2SO
4/ H
2O
2Advantages such as micro-etching solution is more superior a kind of, and it has the microetch constant rate, and it is big to hold the copper amount, and aftertreatment is simple, and is pollution-free, but H
2SO
4/ H
2O
2Hydrogen peroxide decomposes easily in the system, can make plate face blackout, and microetch is inhomogeneous, thereby has improved the cost and the quantity discharged of material greatly, and the chlorion of trace also can make speed descend in the water, therefore, and H
2SO
4/ H
2O
2Being decomposed into of hydrogen peroxide influences H in the micro-etching solution
2SO
4/ H
2O
2The big problem that micro-etching solution is used.
Summary of the invention
In view of this, the embodiment of the invention provides sulfuric acid/hydrogen peroxide micro-etching solution stablizer, solves the technical problem that causes etching speed instability, etching panel blackout in the prior art owing to decomposing hydrogen dioxide solution.
The embodiment of the invention is achieved in that
A kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/hydrogen peroxide micro-etching solution stablizer of the embodiment of the invention,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer is by the free group [HO of strong negativity O, N atom and the decomposing hydrogen dioxide solution of alcohol, organic amine and sulfonic acid in the stablizer
2] form hydrogen bond, effectively reduced [HO
2] activity, significantly reduced the decomposition of hydrogen peroxide, kept the concentration of hydrogen peroxide in the micro-etching solution, simultaneously, the stablizer of present embodiment also has good resistance effect to chlorion.Therefore, the stablizer of present embodiment guarantees at sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the microetch process of micro-etching solution, the microetch rate stabilization, after the microetch, the plate face is smooth, evenly do not turn black.
The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer preparation method, simple to operate, with low cost, free from environmental pollution, be fit to suitability for industrialized production.
Description of drawings
Fig. 1 is the etching effect figure of the embodiment of the invention and Comparative Examples.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with drawings and Examples.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
The embodiment of the invention provides a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, and this sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
At sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the micro-etching solution, hydrogen peroxide can decompose.H
2O
2Decomposition course be:
H
2O
2→2OH
·
Following (soon) reaction takes place then:
OH
·+H
2O
2→H
2O+HO
· 2
2HO
· 2→H
2O
2+O
2
Hydrogen peroxide can produce free radical [HO in decomposition
2], the decomposing hydrogen dioxide solution speed of response will depend on living radical [HO
2] quantity.[HO
2] structure be [O-O-H], O-H key easy fracture forms [O
2] and [H].The sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer adds alcohol, organic amine, sulfonic acid.Contain strong negative O atom in the hydroxyl [OH] of alcohol, have strong electrophilic function; Have strong negative N atom in the amido of organic amine [NH-], have strong electrophilic function; Sulfonic group [SO in the sulfonic acid
3H] contain strong negative O atom, have more high-strength electrophilic function.Above-mentioned strong negative O, N atom can with [HO
2] in the hydrogen evolution hydrogen bond, the electronic cloud on [O-O] will to [O-H] skew, thereby strengthened [O-H] key, reduced [HO
2] activity, significantly reduced the decomposition of hydrogen peroxide.
Particularly, the alcohol of the embodiment of the invention comprises various alcohol, and for example monohydroxy-alcohol, dibasic alcohol or polyvalent alcohol use dibasic alcohol or polyvalent alcohol, require not take place between the hydroxyl on dibasic alcohol or the polyvalent alcohol steric restriction effect.For example ethanol, propyl alcohol, 1,4 butyleneglycol, ethylene glycol, propyl carbinol, propylene glycol, hexan-hexol are preferably in 1,4 butyleneglycol, ethylene glycol, propyl carbinol, the propylene glycol one or more, use two or more alcohol, and mass ratio separately without limits.The alcohol of the embodiment of the invention, also comprise the alcohol that contains sulfonic group or amido, thanomin for example, but the steric restriction effect does not take place between hydroxyl and sulfonic group or the amido, for example hydroxyl not can with sulfonic group generation steric restriction effect or hydroxyl not can with the effect of amido generation steric restriction.
The organic amine of the embodiment of the invention comprises one or more in monoamine, diamine and the polyamine, for example, methylamine, ethamine, aniline, benzylamine, triethylene diamine, triethylamine, trimethylammonium benzylamine, dimethylethanolamine, methylenediphenyl diamines, PAH and polymine.But comprise two or more amidos on the organic amine, require not exist between the amido steric restriction effect.Be preferably in thanomin, diethanolamine, n-Butyl Amine 99, the n-octyl amine one or more, use two or more organic amines, mass ratio separately without limits.The organic amine of the embodiment of the invention comprises also and contains for example amidosulfonic acid of hydroxyl or sulfonic organic amine, but the steric restriction effect does not take place between amido and hydroxyl or the sulfonic group that for example amido and hydroxyl, amido and sulfonic group the steric restriction effect can not take place.
The sulfonic group compound of the embodiment of the invention comprise in one in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid or more than; Contain a sulfonic group, two or more sulfonic sulfonic group compounds.Use comprises two or more sulfonic sulfonic acid, requires not take place between the sulfonic group steric restriction effect.Be preferably in hexanaphthene sulfonic acid, amidosulfonic acid, cyclopropane sulfonic acid, cyclohexylamine sulfonic acid and the tosic acid one or more, use two or more sulfonic group compounds, mass ratio separately without limits.The sulfonic group compound of the embodiment of the invention also comprises the sulfonic acid that contains hydroxyl or amido, but between sulfonic group and hydroxyl or the amido steric restriction effect does not take place, for example the steric restriction effect can not take place between sulfonic group and hydroxyl, sulfonic group and the amido.
Further, the H of the embodiment of the invention
2SO
4/ H
2O
2In the micro-etching solution stablizer, comprise that also weight percentage is the sulfuric acid of 2-5%, vitriolic concentration is preferably 98% sulfuric acid without limits.By in stablizer, adding sulfuric acid, can prevent the volatilization of organic amine, keep the effect of embodiment of the invention stablizer.Make the stablizer and the sulfuric acid/hydrogen peroxide micro-etching solution of the embodiment of the invention have good intermiscibility simultaneously.
Sulfuric acid/hydrogen peroxide (H of the embodiment of the invention
2SO
4/ H
2O
2) the micro-etching solution stablizer, by the free group [HO of the strong negativity O in the stablizer, N atom and decomposing hydrogen dioxide solution
2] form hydrogen bond, significantly reduced the decomposition of hydrogen peroxide, kept the concentration of hydrogen peroxide in the micro-etching solution, simultaneously, the stablizer of the embodiment of the invention has good resistance effect to the chlorion in the micro-etching solution, guarantees at sulfuric acid/hydrogen peroxide (H
2SO
4/ H
2O
2) in the microetch process of micro-etching solution, the microetch rate stabilization, after the microetch, the plate face is smooth, all with not turn black.
The embodiment of the invention also provides the preparation method of a kind of sulfuric acid/hydrogen peroxide micro-etching solution stablizer, and step is as follows:
Following ingredients by weight percent is mixed, and stir process obtains the sulfuric acid/hydrogen peroxide micro-etching solution stablizer of the embodiment of the invention,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
Further, among the preparation method of the sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer, after the said components mixing, add the sulfuric acid of 3-5% again, this vitriolic concentration is preferably 98% sulfuric acid without limits.Above-mentioned stir process is carried out at normal temperatures and pressures, and the time preferably under the 0.8-1.3 atmospheric pressure, stirred 30-60 minute without limits.
The preparation method of the sulfuric acid of the embodiment of the invention/hydrogen peroxide micro-etching solution stablizer, simple to operate, raw materials cost is cheap, is suitable for suitability for industrialized production.
Sulfuric acid/hydrogen peroxide micro-etching solution stablizer below in conjunction with specific embodiment is described in detail.
Embodiment one
The micro-etching solution stablizer of present embodiment, its component and weight percent are as follows:
1,4 butyleneglycol 3%
Thanomin 3%, n-Butyl Amine 99 7%
Amidosulfonic acid 2%
Sulfuric acid 3%
Water 83%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures microetch speed when temperature is 30 ℃.
Embodiment two
The micro-etching solution stablizer of present embodiment, its component and weight percent are as follows:
1,4 butyleneglycol 5%
N-octyl amine 12%
Cyclopropane sulfonic acid 3%
Sulfuric acid 3%
Water 77%.
According to the aforementioned proportion preparation, the ratio of content 0.5-2 ‰ is added to H with above-mentioned micro-etching solution stablizer by weight
2O
2Concentration is 12g/L, H
2SO
4Concentration is in the micro-etching solution of 120g/L, measures microetch speed when temperature is 30 ℃.
Embodiment three
A kind of micro-etching solution stablizer, its component and weight percent are as follows:
Ethylene glycol 5%
Thanomin 8%, n-Butyl Amine 99 7%
Cyclohexylamine sulfonic acid 5%
Sulfuric acid 5%
Water 70%.
According to the ratio preparation, be added to H by 0.5-2 ‰
2O
2Concentration is 12g/L, H
2SO
4Concentration is to measure microetch speed in the micro-etching solution of 120g/L when 30 ℃ of temperature.
Comparative Examples
Use H
2O
2Concentration is 12g/L, H
2SO
4Concentration be the micro-etching solution of 120g/L as blank, when temperature is 30 ℃, measure microetch speed.Microetch speed is 7, and plate face blackout has seal, when opening cylinder with tap water, and plate face blackout, microetch speed is 0.
See also Fig. 1, Fig. 1 shows the embodiment of the invention and Comparative Examples microetch effect situation, in embodiment one, embodiment two and embodiment three, the microetch speed of micro-etching solution is more than 10, along with the increase of stabilizer concentration of the present invention, the microetch speed of micro-etching solution is increasing gradually, and ascendant trend is in line.In Comparative Examples, do not add stablizer of the present invention, so its microetch speed has only 7.This micro-etching solution stablizer that proves absolutely the embodiment of the invention has active effect to reducing the decomposition of hydrogen peroxide.In the Comparative Examples, along with the carrying out of time, the microetch speed of micro-etching solution reduces (this does not show in the accompanying drawings) gradually.
The above only is preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of being done within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. sulfuric acid/hydrogen peroxide micro-etching solution stablizer, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises following components in weight percentage content:
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
2. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described alcohol be in monohydroxy-alcohol, dibasic alcohol or the polyvalent alcohol one or more.
3. sulfuric acid as claimed in claim 2/hydrogen peroxide micro-etching solution stablizer is characterized in that described alcohol is one or more in 1,4 butyleneglycol, ethylene glycol, propyl carbinol, the propylene glycol.
4. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that described organic amine is one or more in monoamine, diamine and the polyamine.
5. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that described organic amine is one or more in thanomin, diethanolamine, n-Butyl Amine 99, the n-octyl amine.
6. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfonic group compound is one or more in alkylsulphonic acid, aryl sulfonic acid, the amidosulfonic acid.
7. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfonic group compound is one or more in cyclohexylamine sulfonic acid, amidosulfonic acid, the cyclopropane sulfonic acid.
8. sulfuric acid as claimed in claim 1/hydrogen peroxide micro-etching solution stablizer is characterized in that, described sulfuric acid/hydrogen peroxide micro-etching solution stablizer comprises that also weight percentage is the sulfuric acid of 3-5%.
9. sulfuric acid/hydrogen peroxide micro-etching solution stablizer preparation method comprises the steps:
Following ingredients by weight percent is mixed, and stir process obtains sulfuric acid/hydrogen peroxide micro-etching solution stablizer,
Alcohol 3-6%
Organic amine 10-15%
Sulfonic group compound 2-5%
Water 40-85%.
10. sulfuric acid as claimed in claim 7/hydrogen peroxide micro-etching solution stablizer preparation method is characterized in that, after said components is mixed, adds the sulfuric acid of 3-5% again.
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| CN105734571A (en) * | 2016-04-21 | 2016-07-06 | 广州恩源化工科技有限公司 | Metal surface micro-etching liquid |
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| CN112342546A (en) * | 2020-10-23 | 2021-02-09 | 珠海隆康电子科技有限公司 | Microetching stabilizer and preparation method thereof |
| CN112831774A (en) * | 2019-11-25 | 2021-05-25 | 惠东县建祥电子科技有限公司 | Copper deposition method suitable for copper-clad plate |
| CN113355674A (en) * | 2021-07-12 | 2021-09-07 | 广东恒锦通科技有限公司 | Stripping and hanging frame stabilizing agent |
| CN114045495A (en) * | 2021-10-26 | 2022-02-15 | Tcl华星光电技术有限公司 | Copper etching solution and manufacturing method of array substrate |
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| JP7671075B2 (en) | 2020-02-28 | 2025-05-01 | シックスリング インコーポレイテッド | Sulfuric acid compositions and uses thereof |
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