CN101958331B - HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating - Google Patents
HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating Download PDFInfo
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- CN101958331B CN101958331B CN2010102348675A CN201010234867A CN101958331B CN 101958331 B CN101958331 B CN 101958331B CN 2010102348675 A CN2010102348675 A CN 2010102348675A CN 201010234867 A CN201010234867 A CN 201010234867A CN 101958331 B CN101958331 B CN 101958331B
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Abstract
The invention discloses an ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip integrated with a hydrogen plasma dip coating, which relates to photoelectric detection appliance technology. The invention adopts the technical scheme that: the ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip is formed by integrating a low-energy hydrogen plasma dip coating to an HgCdTe thin film material surface so as to effectively solve the problem of reduction in the dynamic impedance and detection performance of photosensitive element diodes caused by non-ideal physical properties of the surface of a conventional HgCdTe infrared focal plane array mid-wavelength photovoltaic detection chip. The ion implantation n<+>-on-p type HgCdTe mid-wavelength photovoltaic detection chip has the characteristics of simple structural process and high integration level.
Description
Technical field
The present invention relates to the photoelectric detector technology, be meant that specifically a kind of ion of integrated low-power plasma body hydrogen immersion plating layer injects n
+The infrared medium wave of-on-p type mercury cadmium telluride (HgCdTe) (mid-wavelength) photovoltaic detection chip.
Background technology
Infrared focal plane array device is not only to have had the imaging sensor that infrared information obtained but also had the advanced person of the information processing function, has important in military, civilian fields such as earth observation from space, electrooptical countermeasures, robot vision, Search/Track, medical and industrial thermal imaging and guided missile precise guidances and uses widely.Because its irreplaceable status and effect, the big state of key industry in the world all classifies the tellurium-cadmium-mercury (HgCdTe) infrared focal plane array device technology of preparing as give priority to high technology item.
Under the driving energetically of senior infrared application system, it is that the important development stage of the third generation infrared focal plane detector of characteristics (is seen A.Rogalski that infrared detection technique has entered with big face battle array, miniaturization and multicolor etc., J.Antoszewski, and L.Faraone, " Third-generation infrared photodetectorarrays ", JOURNAL OF APPLIED PHYSICS, 2009,105 (09): 091101-1).The high-resolution of senior infrared imaging is surveyed and is forced the development of infrared focal plane detector of new generation to big face battle array, trend toward miniaturization, requires the pixel dimension of infrared acquisition photaesthesia unit array constantly to dwindle.This is for HgCdTe infrared focal plane medium wave photovoltaic detection chip, must improve the electric property that ion injects photodiode by the top layer physical characteristic of improving the mercury cadmium telluride chip, guaranteeing that high density statuette elemental size Infrared Detectors still has high responsiveness and detectivity, and then guarantee the resolution of statuette elemental size Infrared Detectors in infrared imaging system.
HgCdTe infrared focal plane medium wave photovoltaic detection chip need be at mercury cadmium telluride infrared detecting chip superficial growth deielectric-coating passivation layer.Zinc sulphide or cadmium telluride deielectric-coating are as HgCdTe infrared focal plane detector passivating method commonly used, can play the effect of insulation on mercury cadmium telluride infrared detecting chip surface, also can reduce the detection chip surface state and interface charge reaches certain passivation effect by part.
But also can there be some interface dangling bonds in the array chip passivation interface in infrared focus plane photaesthesia unit, and the interface charge of fast state, slow state.This makes the HgCdTe infrared focal plane detector photaesthesia unit array chip of conventional passivation be difficult to have desirable top layer physical characteristic, thus photoelectric properties such as the responsiveness of restriction detector photaesthesia unit diode and detectivity.
Summary of the invention
Inject n based on above-mentioned existing ion
+The unfavorable problem of-on-p type tellurium-cadmium-mercury (HgCdTe) infrared focal plane array chip top layer physical characteristic the purpose of this invention is to provide the infrared medium wave photovoltaic of the HgCdTe detection chip that a kind of top layer physical characteristic is improved.
In order to achieve the above object, the present invention adopts and behind the growth of passivation deielectric-coating photaesthesia element chip directly is immersed in the low energy hydrogen plasma, injects n with the ion at the integrated low-power plasma body hydrogen immersion plating layer of chip surface
+The organization plan of the infrared medium wave photovoltaic of-on-p type HgCdTe detection chip.
The ion of integrated low-power plasma body hydrogen immersion plating layer of the present invention injects n
+The infrared medium wave photovoltaic of-on-p type HgCdTe detection chip comprises: the public electrode 8 on the lip-deep photaesthesia of the hydrogen plasma immersion plating floor 4 on the p type active area 2 of infrared substrate 1, photaesthesia unit, the n type district 3 of photaesthesia unit, top layer, p type district, the hydrogen plasma immersion plating floor 5 on top layer, n type district, the dielectric passivation film 6 of detection chip, n type district unit electrode 7, surface, p type district and with the indium colonnade battle array 9 of reading circuit mixing and interconnecting.The n type district array 3 of photaesthesia unit is that the boron ion injects and forms, and with the p type active area 2 common photodiode array that form infrared medium wave photovoltaic detection chip of photaesthesia unit.Wherein, the hydrogen plasma immersion plating floor 4 on top layer, p type district and the hydrogen plasma immersion plating floor 5 on top layer, n type district are integrated by p type active area 2 and n type district 3 top layer HgCdTe material original positions respectively, and they cover the HgCdTe top layer of detection chip together fully.The hydrogen plasma immersion plating floor 4 on top layer, p type district is positioned at the below of the dielectric passivation film 6 of the public electrode 8 on surface, p type district and part detection chip, and the hydrogen plasma immersion plating floor 5 on top layer, n type district is positioned at the below of the dielectric passivation film 6 of lip-deep photaesthesia unit's electrode 7 in n type district and part detection chip.The thickness of the hydrogen plasma immersion plating floor 4 on top layer, p type district and the hydrogen plasma immersion plating floor 5 on top layer, n type district all is 0.1-0.5 μ m, and the lateral dimension of the hydrogen plasma immersion plating floor 5 on top layer, n type district is the μ m of (15-50) μ m * (15-50).
At the hydrogen plasma immersion plating floor 4 on top layer, p type district and the hydrogen plasma immersion plating floor 5 on top layer, n type district, the H atom is by with the unsaturated dangling bonds in interface with reduce the interface charge of fast state, slow state, and the interaction of the defective of HgCdTe chip list layer material, can improve ion and inject n
+The photoelectric properties of the physical characteristic on the infrared medium wave photovoltaic of-on-p type HgCdTe detection chip top layer and raising Infrared Detectors.
Great advantage of the present invention is: the hydrogen immersion plating layer that can improve the top layer physical characteristic dexterously is integrated in ion and injects n
+The infrared medium wave photovoltaic of-on-p type HgCdTe detection chip can effectively improve the motional impedance and the photoelectric properties of photodiode, thereby has the simple and high characteristics of integrated level of structural manufacturing process.
Description of drawings
Fig. 1 is that the ion of the integrated low-power plasma body of the present invention hydrogen immersion plating layer injects n
+The generalized section of the infrared medium wave photovoltaic of-on-p type HgCdTe detection chip.
Fig. 2 is the n of not integrated low-power plasma body hydrogen immersion plating layer
+The infrared medium wave photovoltaic of-on-p type HgCdTe detection chip photodiode I-V and R-V performance plot.
Fig. 3 is the n of the integrated low-power plasma body of the present invention hydrogen immersion plating layer
+The infrared medium wave photovoltaic of-on-p type HgCdTe detection chip photodiode I-V and R-V performance plot.
Embodiment
Ion with integrated low-power plasma body hydrogen immersion plating layer injects n below
+-on-p type Hg
1-xCd
xThe infrared medium wave photovoltaic of Te (x=0.295) detection chip is embodiment, in conjunction with the accompanying drawings the specific embodiment of the present invention is described in further detail:
See Fig. 1, the n of integrated low-power plasma body hydrogen immersion plating layer of the present invention
+The infrared medium wave photovoltaic of-on-p type HgCdTe detection chip comprises: the public electrode 8 on the lip-deep photaesthesia of the hydrogen plasma immersion plating floor 4 on the p type active area 2 of infrared substrate 1, photaesthesia unit, the n type district 3 of photaesthesia unit, top layer, p type district, the hydrogen plasma immersion plating floor 5 on top layer, n type district, the dielectric passivation film 6 of detection chip, n type district unit electrode 7, surface, p type district and with the indium colonnade battle array 9 of reading circuit mixing and interconnecting.The n type district array 3 of photaesthesia unit is that the boron ion injects and forms, and with the p type active area 2 common photodiode array that form infrared medium wave photovoltaic detection chip of photaesthesia unit.Wherein, the hydrogen plasma immersion plating floor 4 on top layer, p type district and the hydrogen plasma immersion plating floor 5 on top layer, n type district are integrated by p type active area 2 and n type district 3 top layer HgCdTe material original positions respectively, and they cover the HgCdTe top layer of detection chip together fully.The hydrogen plasma immersion plating floor 4 on top layer, p type district is positioned at the below of the dielectric passivation film 6 of the public electrode 8 on surface, p type district and part detection chip, and the hydrogen plasma immersion plating floor 5 on top layer, n type district is positioned at the below of the dielectric passivation film 6 of lip-deep photaesthesia unit's electrode 7 in n type district and part detection chip.The thickness of the hydrogen plasma immersion plating floor 4 on top layer, p type district and the hydrogen plasma immersion plating floor 5 on top layer, n type district all is 0.3 μ m, and the lateral dimension of the hydrogen plasma immersion plating floor 5 on top layer, n type district is 30 * 30 μ m
2
The ion that Fig. 2 and Fig. 3 are respectively not integrated and integrated low-power plasma body hydrogen immersion plating layer injects n
+The I-V and the R-V performance plot of the mercury cadmium telluride infrared detecting chip photodiode of-on-p type.Shown in Fig. 2,3, the cut-in voltage of the infrared medium wave detection chip of the HgCdTe photodiode of integrated low-power plasma body hydrogen immersion plating layer than the increase of not integrated low-power plasma body hydrogen immersion plating layer about 50mV.And, the photodiode of the infrared medium wave detection chip of HgCdTe of integrated low-power plasma body hydrogen immersion plating layer zero partially and anti-motional impedance partially than the raising of integrated low-power plasma body hydrogen immersion plating layer 10 times, and the photodiode motional impedance of the infrared medium wave detection chip of HgCdTe of integrated low-power plasma body hydrogen immersion plating layer also obviously reduces under big forward bias.Owing to as if the fixed positive charge at interface between HgCdTe detection chip and passivation layer, not only can reduce the cut-in voltage of photodiode, also can cause HgCdTe detection chip surface transoid, thereby cause the big surface channel leakage current of detection chip.Therefore, the passivation interface of deduction HgCdTe detection chip is planted the fixed positive charge at hydrogen processing having reduced interface between HgCdTe detection chip and passivation layer.This shows the integrated physical characteristic of improving the detection chip top layer of HgCdTe detection chip low-power plasma body hydrogen immersion plating layer, suppress the dark current of HgCdTe medium wave photodiode and the ohmic contact of optimization detection chip, thereby can improve the detection performance of medium wave infrared focal plane detector.
Hence one can see that, and the organization plan of the mercury cadmium telluride detection chip of the integrated low-power plasma body of the present invention hydrogen immersion plating layer is feasible, rational.
Claims (1)
1. the n of an integrated low-power plasma body hydrogen immersion plating layer
+The infrared medium wave photovoltaic of-on-p type mercury cadmium telluride detection chip, it comprises: the public electrode (8) on the lip-deep photaesthesia of the hydrogen plasma immersion plating floor (4) on the p type active area (2) of infrared substrate (1), photaesthesia unit, the n type district (3) of photaesthesia unit, top layer, p type district, the hydrogen plasma immersion plating floor (5) on top layer, n type district, the dielectric passivation film (6) of detection chip, n type district unit electrode (7), surface, p type district and with the indium colonnade battle array (9) of reading circuit mixing and interconnecting; The n type district array (3) of photaesthesia unit is injected by the boron ion and is formed, and forms the photodiode array of infrared medium wave photovoltaic detection chip jointly with the p type active area (2) of photaesthesia unit; It is characterized in that:
The hydrogen plasma immersion plating floor (4) on top layer, p type district and the hydrogen plasma immersion plating floor (5) on top layer, n type district are integrated by p type active area (2) and n type district (3) top layer mercury cadmium telluride original position respectively, and they cover the mercury cadmium telluride top layer of detection chip together fully; The hydrogen plasma immersion plating floor (4) on top layer, p type district is positioned at the below of the dielectric passivation film (6) of the public electrode (8) on surface, p type district and part detection chip, and the hydrogen plasma immersion plating floor (5) on top layer, n type district is positioned at the below of the dielectric passivation film (6) of lip-deep photaesthesia unit's electrode (7) in n type district and part detection chip; The thickness of the hydrogen plasma immersion plating floor (4) on top layer, p type district and the hydrogen plasma immersion plating floor (5) on top layer, n type district all is 0.3 μ m, and the lateral dimension of the hydrogen plasma immersion plating floor (5) on top layer, n type district is 30 μ m * 30 μ m.
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| CN2010102348675A CN101958331B (en) | 2010-07-23 | 2010-07-23 | HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating |
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| CN2010102348675A CN101958331B (en) | 2010-07-23 | 2010-07-23 | HgCdTe mid-wavelength photovoltaic detection chip integrated with hydrogen plasma dip coating |
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| CN101958331B true CN101958331B (en) | 2011-11-02 |
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|---|---|---|---|---|
| CN101740501A (en) * | 2009-11-18 | 2010-06-16 | 中国科学院上海技术物理研究所 | Photoelectrical p-n junction modification method of ion implantation type HgCdTe infrared focal plane |
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| CN101740501A (en) * | 2009-11-18 | 2010-06-16 | 中国科学院上海技术物理研究所 | Photoelectrical p-n junction modification method of ion implantation type HgCdTe infrared focal plane |
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