CN109308470A - Fingerprint acquisition apparatus and its manufacturing method - Google Patents
Fingerprint acquisition apparatus and its manufacturing method Download PDFInfo
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- CN109308470A CN109308470A CN201811135390.8A CN201811135390A CN109308470A CN 109308470 A CN109308470 A CN 109308470A CN 201811135390 A CN201811135390 A CN 201811135390A CN 109308470 A CN109308470 A CN 109308470A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 95
- 229920005591 polysilicon Polymers 0.000 claims abstract description 92
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 59
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 59
- 238000000059 patterning Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 5
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 5
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims 2
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 11
- 238000001259 photo etching Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 234
- 239000010409 thin film Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- -1 ITO) Chemical compound 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000007792 gaseous phase Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 230000011514 reflex Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V10/00—Arrangements for image or video recognition or understanding
- G06V10/94—Hardware or software architectures specially adapted for image or video understanding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Human Computer Interaction (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Software Systems (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Image Input (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
A kind of panel identification technology is provided, especially a kind of fingerprint acquisition apparatus and its manufacturing method, described device includes: a pixel substrate, multiple sensor pixel units are formed thereon, each sensor pixel unit has a cog region and a read area, each sensor pixel unit includes: a patterning light shield layer, is set to the cog region and read area；One polysilicon layer is set on the patterning light shield layer；One grid layer is set on the polysilicon layer in the read area；One pattern dielectric layer is set on the grid layer in the read area；One metal oxide layer is set on the polysilicon layer in the cog region；And a source-drain electrode metallic diaphragm, it is set on the metal oxide layer in the cog region and in the pattern dielectric layer in the read area, reaches without complicated film forming and photoetching process and the higher beneficial effect of resolution ratio.The manufacturing method of the fingerprint acquisition apparatus is also provided.
Description
Technical field
This announcement is related to panel identification technology field more particularly to a kind of fingerprint acquisition apparatus and its manufacturing method.
Background technique
Fingerprint recognition is causing extensive concern as bio-identification mode recently, especially has more in mobile payment
Wide prospect.The method of existing fingerprint recognition also includes optics, condenser type, microwave, the various ways such as temperature and ultrasonic wave.
But traditional optical sensor mode cannot achieve frivolous, especially under high-resolution requirement, traditional equipment volume is huge
Greatly can not be portable, therefore be difficult to be integrated into equipment as mobile phone.Although other modes solve the problems, such as frivolous, nothing
Method realizes large area array, or can not combine other function, and complex process, at high cost.
Medical Amorphous silicon flat-panel detectors in the prior art are a kind of traditional optical sensor, including amorphous silicon light
Electric diode and thin film transistor (TFT), Fig. 1 show a kind of section signal of Amorphous silicon flat-panel detectors pixel unit of the prior art
Figure, is formed with multiple flat panel detector pixel units, each flat panel detector pixel unit includes: film on transparent substrate 1
Transistor 3 and amorphous silicon photodiodes, wherein amorphous silicon photodiodes include being formed on 1 surface of transparent substrate successively shape
At the first light shield layer 2, the first insulating layer 4, drain electrode layer 5, N-type layer 6, middle layer 7, P-type layer 8, and contact electrode 9,
Dielectric layer 10 insulate thin film transistor (TFT) 3 and amorphous silicon photodiodes, is not necessarily to the area of illumination in thin film transistor (TFT) 3 and part
10 surface of dielectric layer in domain is formed with the second light shield layer 12, connection electrode 11 is formed on contact electrode 9, in the second light shield layer
12 and connection electrode 11 top formed passivation layer 13.Wherein the first light shield layer 2 is with the grid of thin film transistor (TFT) 3 in same metal
The drain electrode of layer, drain electrode layer 5 and thin film transistor (TFT) 3 is in same metal layer, from figure 1 it appears that this amorphous silicon photoelectricity
The major part of diode is the laminated construction of P-type layer 8, middle layer 7 and N-type layer 6, therefore, Amorphous silicon flat-panel detectors
Thickness is about the laminated thickness for being superimposed amorphous silicon photodiodes again on the thickness of the drain electrode of thin film transistor (TFT) 3, rather than
The thickness of middle layer 7 in crystal silicon photodiode enters in 1 microns so that the thickness of Amorphous silicon flat-panel detectors is larger
It is longer to penetrate light path of the light in the pixel unit of flat panel detector, generates interference possibly into adjacent pixel unit.And
Above-mentioned flat panel detector pixel unit includes the thin film transistor (TFT) 3 and amorphous silicon photodiodes of discrete, thin film transistor (TFT) 3 with
Amorphous silicon photodiodes are provided separately, i.e., there are also certain distance between thin film transistor (TFT) 3 and amorphous silicon photodiodes,
Keep flat panel detector pixel unit occupied area larger, so that resolution ratio is lower.In addition, amorphous silicon photodiodes need
The step of being fabricated separately after forming thin film transistor (TFT) 3, needing multiple film forming and photoetching process, so that production cost is higher.Such as
This Amorphous silicon flat-panel detectors are used for the fields such as fingerprint recognition by fruit, have that production cost is higher, the lower defect of resolution ratio,
Its application on the portable equipments such as mobile phone will be limited.
Therefore, it is necessary to provide a kind of fingerprint acquisition apparatus and its manufacturing method, solve in the prior art production cost compared with
High, the lower defect of resolution ratio.
Summary of the invention
In order to solve the above-mentioned technical problem, this announcement prepares thin film transistor (TFT) using low-temperature polysilicon silicon technology, passes through N-type gold
Belong to oxide skin(coating) and p-type polysilicon layer and form heterojunction photodiode, and by polycrystalline SiTFT and heterojunction photovoltaic
Diode is integrated into an overall structure, provides a kind of lower production costs, the higher low temperature polycrystalline silicon fingerprint sensing dress of resolution ratio
It sets and its manufacturing method, to overcome drawbacks described above.
In order to achieve the above object, this announcement provides a kind of fingerprint acquisition apparatus and its manufacturing method, described device include:
One pixel substrate, forms multiple sensor pixel units on the pixel substrate, and each sensor pixel unit has a cog region
With a read area, each sensor pixel unit includes: a patterning light shield layer, is set to the cog region and the reading
Area；One polysilicon layer is set on the patterning light shield layer；One grid layer, the polycrystalline being set in the read area
On silicon layer；One pattern dielectric layer is set on the grid layer in the read area；One metal oxide layer, is set to
On the polysilicon layer in the cog region；And a source-drain electrode metallic diaphragm, the gold being set in the cog region
Belong on oxide skin(coating) and in the pattern dielectric layer in the read area.
According to an embodiment of fingerprint acquisition apparatus described herein, the polysilicon layer is a p-type polysilicon layer.
According to an embodiment of fingerprint acquisition apparatus described herein, the metal oxide layer is N-type metal oxidation
Nitride layer.
According to an embodiment of fingerprint acquisition apparatus described herein, the N-type metal oxide layer includes being selected from indium tin
Oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), cadmium tin-oxide, antimony tin oxide, zinc tin oxide,
Zinc oxide (ZnO) and stannic oxide (SnO2) one of the group that constitutes or a variety of.
According to an embodiment of fingerprint acquisition apparatus described herein, the polysilicon layer and the metal oxide layer
Intersection is in a uneven structure.
In order to achieve the above object, this announcement separately provides a kind of manufacturing method of fingerprint acquisition apparatus, comprising: provides a picture
Plain substrate；Multiple sensor pixel units are formed in the pixel substrate, each sensor pixel unit has a cog region and one
Read area；In the cog region and the read area one light shield layer of formation on the pixel substrate, the light shield layer is patterned
Form a patterning light shield layer；A polysilicon layer is formed in the patterning light shield layer of the cog region and the read area
On；A grid layer is formed on the polysilicon layer of the read area；A dielectric layer is deposited in the cog region and the reading
It takes on the polysilicon layer in area；Patterning one pattern dielectric layer of the dielectric layer formation makes the pattern dielectric layer only shape
On the polysilicon layer of read area described in Cheng Yu；A metal oxide layer is deposited and patterned to be situated between in the not set patterning
On the polysilicon layer of electric layer；And one source-drain electrode metallic diaphragm of deposition is on the metal oxide layer of the cog region
With in the pattern dielectric layer of the read area to form source-drain electrode cabling.
According to an embodiment of the manufacturing method of fingerprint acquisition apparatus described herein, the polysilicon layer is that a p-type is more
Crystal silicon layer.
According to an embodiment of the manufacturing method of fingerprint acquisition apparatus described herein, the metal oxide layer is a N
Type metal oxide layer.
According to an embodiment of the manufacturing method of fingerprint acquisition apparatus described herein, the N-type metal oxide layer packet
Include selected from indium tin oxide (ITO), indium-zinc oxide (IZO), aluminium zinc oxide (AZO), cadmium tin-oxide, antimony tin oxide,
Zinc tin oxide, zinc oxide (ZnO) and stannic oxide (SnO2) one of the group that constitutes or a variety of.
According to an embodiment of the manufacturing method of fingerprint acquisition apparatus described herein, the polysilicon layer and the metal
The intersection of oxide skin(coating) is in a uneven structure.
The fingerprint acquisition apparatus and manufacturing method that this announcement provides, prepare thin film transistor (TFT) by low-temperature polysilicon silicon technology,
And heterojunction photodiode is formed by N-type metal oxide layer and p-type polysilicon layer, certainly by photodiode perception reflex
The weak variation of light intensity of one signal light beam of finger, i.e. fingerprint reflection signal light beam can be identified by photodiode, and be converted to light
Electric current, thin film transistor (TFT) reads the photoelectric current that identification photodiode produces, to realize fingerprint identification function.Due to N-type metal
A coarse/concavo-convex interface, therefore N-type metal oxide layer and p-type polycrystalline is presented in the interface of oxide skin(coating) and p-type polysilicon interlayer
The heterojunction area that larger area is formed between silicon layer, is conducive to the absorption for fingerprint reflected light, increases in p-type polysilicon layer
The separating capacity of electron hole pair.Meanwhile thin film transistor (TFT) and heterojunction photodiode are realized in an integrated morphology jointly, nothing
Need complicated film forming and photoetching process.For allow this announcement features described above and advantage can be clearer and more comprehensible, special embodiment below,
And it is described below in detail with reference to the accompanying drawings.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the pixel cell structure schematic diagram of existing flat panel sensor.
Fig. 2 is this announcement fingerprint acquisition apparatus sensor pixel unit structural schematic diagram.
Fig. 3 A-3E is the manufacturing method flow diagram of this announcement fingerprint acquisition apparatus.
Fig. 4 is the manufacturing method step schematic diagram of this announcement fingerprint acquisition apparatus.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate this announcement
Example.The direction term that this announcement is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand this announcement, rather than to
Limit this announcement.The similar unit of structure is with being given the same reference numerals in the figure.
The realization process of detailed this announcement embodiment with reference to the accompanying drawing.
Referring to Fig. 2, it is the fingerprint acquisition apparatus sensor pixel unit structural schematic diagram of this announcement, the one of this announcement
In embodiment, the fingerprint acquisition apparatus to detect a finger 300 includes: a pixel substrate 101, on the pixel substrate 101
Multiple sensor pixel units 102 (sensor pixel unit 102 is shown in figure) are formed, each sensor pixel unit 102 has
Have and be provided with photodiode construction on a cog region A and read area a R, the cog region A, to identify the finger
The strong and weak variation of the 300 signal light beam L2 reflected, and be converted to a photoelectric current form；It is thin that the read area R is provided with one
Film transistor (ThinFilm Transistor, TFT) construction, to read and recognize the photoelectricity of aforementioned Photon-Electron diode generation
Stream.
Each sensor pixel unit 102 includes: a patterning light shield layer 103, is set to the cog region A and the reading
Area R is taken, in more detail, the patterning light shield layer 103 of the cog region A is set to and is set to the read area R's
The patterning light shield layer 103 is discontinuous；One polysilicon layer 104 is set to the corresponding cog region A and read area R
The patterning light shield layer 103 on；One grid layer 105 is set on the polysilicon layer 104 in the read area R；One
Pattern dielectric layer (i.e. following third dielectric layers 106), is set on the grid layer 105 in the read area R；One metal
Oxide skin(coating) 107 is set on the polysilicon layer 104 in the cog region A；And a source-drain electrode metallic diaphragm 108, if
It is placed on the metal oxide layer 107 in the cog region A with the pattern dielectric layer in the read area R (i.e.
Following third dielectric layers 106) on.
For one luminescence unit (not shown) to issue a sensing light beam L1 to finger 300, it is anti-that finger 300 will sense light beam L1
It penetrates as a signal light beam L2.Above-mentioned signal light beam L2 is not limited to the reflected beams from 300 surface of finger depicted in Fig. 1,
The light beam reflected after penetrating 300 surface of finger through 300 inner tissue of finger is further included, Fig. 1, which is merely exemplary, to be shown wherein
One light beam, is not limited to this announcement.
In the present embodiment, all sensor pixel units 102 of fingerprint acquisition apparatus form a photosensitive array.In order to clear
Illustrate the configuration relation of above-mentioned each component, is the schematic diagram of one of these sensor pixel units 102 depicted in Fig. 1.
The sensor pixel unit 102 includes the film crystal on photodiode and read area R on cog region A
Pipe.The photodiode includes the polysilicon layer 104 and metal oxide layer 107 of stacking, in more detail, the polysilicon
Layer 104 is a p-type polysilicon layer, and the metal oxide layer 107 is a N-type metal oxide layer, N-type metal oxide layer heap
Stack is on p-type polysilicon layer.One first dielectric layer is equipped between the patterning light shield layer 103 and the polysilicon layer 104
111, the p-type polysilicon layer is arranged on first dielectric layer 111 of the correspondence cog region A and read area R, the
One dielectric layer 111 can be formed using chemical gaseous phase depositing (CVD) method, such as low temperature chemical vapor depositing (LTCVD) method, low pressure
Chemical gaseous phase depositing (LPCVD) method, fast thermal chemical vapor depositing (LTCVD), plasma enhanced chemical vapor depositing (PECVD),
It can be formed using physical vapor depositing (PVD) method or sputtering method.
One gate metal layer (not shown) is formed on the p-type polysilicon layer of the corresponding read area R, patterns institute
Gate metal layer is stated to form the grid layer in the predetermined position on the polysilicon layer 104 in the read area R
105.Wherein, it is equipped with one second dielectric layer 112 between the grid layer 105 and the polysilicon layer 104, passes through above-mentioned pattern
The grid layer 105 is corresponded to after change.
In one embodiment, the pattern dielectric layer is a third dielectric layer 106, is set in the read area R
On the polysilicon layer 104, and the two sides for the metal oxide layer 107 being set in the cog region A, but institute is not covered
State metal oxide layer 107.The thickness of the third dielectric layer 106 is greater than the thickness of the metal oxide layer 107.Described
Three dielectric layers 106 are formed on the grid layer 105, and the third dielectric layer 106 is corresponding to the two sides of the grid layer 105
It is formed with source/drain region contact hole 151, it is subsequent that source/drain is formed by via described by the source-drain electrode metallic diaphragm 108
Source/drain region contact hole 151 and with the polysilicon layer 104 be electrically connected.
In addition, the metal oxide layer 107 include a material be selected from indium tin oxide (Indium TinOxide,
ITO), indium-zinc oxide (Indium Zinc Oxide, IZO), aluminium zinc oxide (Aluminum ZincOxide, AZO), cadmium
Tin-oxide, antimony tin oxide, zinc tin oxide, zinc oxide (ZnO) and stannic oxide (SnO2) group that constitutes.In this reality
It applies in example, the material of the metal oxide layer 107 is tin indium oxide (Indium Tin Oxide, ITO).The metal oxidation
Nitride layer 107 is only arranged on the polysilicon layer 104 in the cog region A, that is, corresponds to the cog region of photodiode composition
A。
As shown in Fig. 2 magnified partial view formula, the intersection of the polysilicon layer 104 and the metal oxide layer 107 is in
One uneven structure 200, the unevenness structure 200 are the structures such as a coarse kenel, concave-convex kenel, mutual chimeric kenel, but
It is not limited.Due to above-mentioned uneven structure 200, the boundary of the polysilicon layer 104 and the metal oxide layer 107
Place can have biggish contact area, i.e., the hetero-junctions that N-type metal oxide layer forms larger area with p-type polysilicon interlayer connects
Area is touched, the absorption of the signal light beam L2 reflected for finger is conducive to, increases the separation energy of electron hole pair in p-type polysilicon layer
Power.
It is noted that first Jie of the cog region A and read area R is arranged in the polysilicon layer 104
In electric layer 111, i.e., the described polysilicon layer 104 is formed in the same of the photodiode of cog region A and the thin film transistor (TFT) of read area R
On one horizontal hierarchical structure, the top of the patterning light shield layer 103, the metal oxide is arranged in the grid layer 105
One middle layer need not be set between layer 107 and the polysilicon layer 104, avoided in amorphous silicon photodiodes in the prior art
Intermediate layer thickness it is larger caused by defect, and also need not be without complicated film forming and photoetching process on processing procedure.
It please refers to Fig. 3 A-3E to Fig. 4 and cooperates shown in Fig. 2, be the step of the manufacturing method of this announcement fingerprint acquisition apparatus
Rapid and flow diagram.The manufacturing method of this announcement fingerprint acquisition apparatus includes: step S01: providing a pixel substrate 101；Step
Rapid S02: multiple sensor pixel units 102 are formed in the pixel substrate 101, each sensor pixel unit has a cog region
An A and read area R；Step S03: a shading is formed in the cog region A and read area R on the pixel substrate 101
Layer patterns the light shield layer and forms a patterning light shield layer 103；Step S04: a polysilicon layer 104 is formed in the identification
On the patterning light shield layer 103 of the area A and read area R；Step S05: a grid layer 105 is formed in the read area R
The polysilicon layer 104 on；Step S06: one dielectric layer of deposition is in the polycrystalline of the cog region A and the read area R
On silicon layer 104；Step S07: patterning the dielectric layer formation one pattern dielectric layer (i.e. third dielectric layer 106) makes the figure
Case dielectric layer (i.e. third dielectric layer 106) is formed on the polysilicon layer 104 in the read area R, and is formed in institute
The two sides of the metal oxide layer 107 in cog region A are stated, but do not cover the metal oxide layer 107；Step S08: heavy
It accumulates and patterns a metal oxide layer 107 in the described more of the not set pattern dielectric layer (i.e. third dielectric layer 106)
On crystal silicon layer 104；And step S09: one source-drain electrode metallic diaphragm 108 of deposition is in the metal oxide of the cog region A
Layer 107 on in the pattern dielectric layer of the read area R to form source-drain electrode cabling.
It in more detail, further include that light shield layer is formed in the pixel base using a film-forming process among step S03
The cog region A and the read area R on plate pattern the light shield layer using a yellow light process and form a patterning shading
Layer 103, as shown in Figure 3A.
In step S04, the polysilicon layer 104 is formed in patterning light shield layer using a chemical vapor deposition process
On 103, it is noted that further including before forming the polysilicon layer 104 and depositing one on the patterning light shield layer 103
First dielectric layer 111, as shown in Figure 3B, later, formed polysilicon layer 104 polycrystalline silicon material after laser low-temperature annealing
The polysilicon layer 104 is formed on first dielectric layer 111 of the cog region A and read area R, wherein the polycrystalline
Silicon layer 104 is a p-type polysilicon layer, and the polysilicon layer 104 is patterned.
In step S05, a gate metal layer (not shown) is formed on the polysilicon layer 104 of the read area R,
It is described to be formed in the predetermined position on the polysilicon layer 104 in the read area R to pattern the gate metal layer
Grid layer 105, wherein as shown in Figure 3 C, one second dielectric layer is equipped between the grid layer 105 and the polysilicon layer 104
112, the grid layer 105 is corresponded to after above-mentioned patterning.And with the grid layer 105 and second dielectric layer
112 carry out source-drain electrode doping to the polysilicon layer 104 for exposure mask.Make 112 institute of the grid layer 105 and second dielectric layer
The region of the corresponding polysilicon layer 104 is not by ion doping.
In step S07, the pattern dielectric layer is third dielectric layer 106, patterns the step of the third dielectric layer 106
It include being formed with source/drain region contact hole 151 corresponding with the grid layer 105 in the third dielectric layer 106, such as in rapid
It is subsequent that source/drain (not shown) is formed by via the source/drain region by the source-drain electrode metallic diaphragm 108 shown in Fig. 3 D
Contact hole 151 and with the polysilicon layer 104 be electrically connected.And the third dielectric layer 106 is by two pole of photoelectricity of cog region A
The film crystal pipe insulation of pipe and read area R.
In step S08, the metal oxide layer 107 is deposited on the polysilicon layer 104 of remainder, that is, is existed
In above-mentioned steps, to form third dielectric layer 106 on the polysilicon layer 104 of the corresponding read area R, therefore in not set
The metal oxide layer 107, i.e., the described metal oxide are deposited on the polysilicon layer 104 of the third dielectric layer 106
Layer 107 is correspondingly formed on the polysilicon layer 104 of the correspondence cog region A.Also therefore metal oxide layer 107 and polycrystalline
The heterojunction area of larger area is formed between silicon layer 104.In more detail, the part of cog region constitutes a photodiode,
The part of read area constitutes a thin film transistor (TFT).The photodiode includes the polysilicon layer 104 and metal oxide of stacking
Layer 107, the polysilicon layer 104 are a p-type polysilicon layer, and the metal oxide layer 107 is a N-type metal oxide layer.
In step S09, the sedimentary origin drain metal film layer 108 on third dielectric layer 106, and pattern the source-drain electrode
The source/drain that metallic diaphragm 108 is formed electrically connects via the source/drain region contact hole 151 with the polysilicon layer 104
It connects, as shown in FIGURE 3 E.The source/drain formed is electrical with the metal oxide layer 107 and the polysilicon layer 104 respectively
Connection passes through the photoelectric current that photodiode is converted and formed from a signal light beam L2 of finger to transmit reflection, specifically
For, the electronics that source/drain is used to assist being issued in the metal oxide layer 107 and the polysilicon layer 104 by machine is electric
The movement in hole, and transmit the electronics electricity hole and be formed by photoelectric current.
In addition, the intersection of the polysilicon layer 104 and the metal oxide layer 107 is in a uneven structure 200, institute
Stating uneven structure 200 is a coarse kenel, concave-convex kenel, the mutually structures such as chimeric kenel, and but not limited to this.Due to above-mentioned
Uneven structure, the polysilicon layer 104 and the intersection of the metal oxide layer 107 can have biggish contact surface
Product, i.e. N-type metal oxide layer and p-type polysilicon interlayer form the heterojunction area of larger area, are conducive to for fingerprint
The absorption of reflected light increases the separating capacity of electron hole pair in p-type polysilicon layer.
It can be seen from the above, the p-type polysilicon layer is formed in the photodiode of cog region A and the film crystalline substance of read area R
On the same level hierarchical structure of body pipe, photodiode is prepared simultaneously with thin film transistor (TFT), and the grid layer 105 is arranged in institute
The top for stating patterning light shield layer 103 need not be arranged in one between the metal oxide layer 107 and the polysilicon layer 104
Interbed avoids the larger generated defect of intermediate layer thickness in amorphous silicon photodiodes in the prior art, and is making
It also need not be without complicated film forming and photoetching process in journey.
The fingerprint acquisition apparatus and manufacturing method that this announcement provides, prepare thin film transistor (TFT) by low-temperature polysilicon silicon technology,
And heterojunction photodiode is formed by N-type metal oxide layer and p-type polysilicon layer, certainly by photodiode perception reflex
The weak variation of light intensity of one signal light beam of finger, i.e. fingerprint reflection signal light beam can be identified by photodiode, and be converted to light
Electric current, thin film transistor (TFT) reads the photoelectric current that identification photodiode produces, to realize fingerprint identification function.Due to N-type metal
A coarse/concavo-convex interface, therefore N-type metal oxide layer and p-type polycrystalline is presented in the interface of oxide skin(coating) and p-type polysilicon interlayer
The heterojunction area that larger area is formed between silicon layer, is conducive to the absorption for fingerprint reflected light, increases in p-type polysilicon layer
The separating capacity of electron hole pair.Meanwhile thin film transistor (TFT) and heterojunction photodiode are realized in an integrated morphology jointly, nothing
Need complicated film forming and photoetching process.For allow this announcement features described above and advantage can be clearer and more comprehensible, special embodiment below,
And it is described below in detail with reference to the accompanying drawings.
The above is the preferred embodiment of this announcement, it is noted that for those skilled in the art
For, under the premise of not departing from this announcement principle, several improvements and modifications can also be made, these improvements and modifications are also considered as
The protection scope of this announcement.
Claims (10)
1. a kind of fingerprint acquisition apparatus characterized by comprising a pixel substrate is formed with multiple senses on the pixel substrate
Pixel unit is surveyed, each sensor pixel unit has a cog region and a read area, and each sensor pixel unit includes:
One patterning light shield layer, be set to the sensor pixel unit the cog region and the read area；
One polysilicon layer is set on the patterning light shield layer；
One grid layer is set on the polysilicon layer in the read area；
One pattern dielectric layer is set on the grid layer in the read area；
One metal oxide layer is set on the polysilicon layer in the cog region；And
One source-drain electrode metallic diaphragm is set on the metal oxide layer in the cog region and the institute in the read area
It states in pattern dielectric layer.
2. fingerprint acquisition apparatus according to claim 1, which is characterized in that the polysilicon layer is a p-type polysilicon layer.
3. fingerprint acquisition apparatus according to claim 1, which is characterized in that the metal oxide layer is a N-type metal
Oxide skin(coating).
4. fingerprint acquisition apparatus according to claim 3, which is characterized in that the N-type metal oxide layer includes being selected from
Indium tin oxide, indium-zinc oxide, aluminium zinc oxide, cadmium tin-oxide, antimony tin oxide, zinc tin oxide, zinc oxide and two
One of group that tin oxide is constituted is a variety of.
5. fingerprint acquisition apparatus according to claim 1, which is characterized in that the polysilicon layer and the metal oxide
The intersection of layer is in a uneven structure.
6. a kind of manufacturing method of fingerprint acquisition apparatus characterized by comprising
One pixel substrate is provided；
Multiple sensor pixel units are formed in the pixel substrate, there is each sensor pixel unit a cog region and one to read
Area；
In the cog region and the read area one light shield layer of formation on the pixel substrate, patterns the light shield layer and formed
One patterning light shield layer；
A polysilicon layer is formed on the cog region and the patterning light shield layer of the read area；
A grid layer is formed on the polysilicon layer of the read area；
A dielectric layer is deposited on the cog region and the polysilicon layer of the read area；
Patterning one pattern dielectric layer of the dielectric layer formation makes the pattern dielectric layer only be formed in the read area
On the polysilicon layer；
A metal oxide layer is deposited and patterned on the polysilicon layer of the not set pattern dielectric layer；And
A source-drain electrode metallic diaphragm is deposited in the figure on the metal oxide layer of the cog region with the read area
To form source-drain electrode cabling on case dielectric layer.
7. the manufacturing method of fingerprint acquisition apparatus according to claim 6, which is characterized in that the polysilicon layer is a P
Type polysilicon layer.
8. the manufacturing method of fingerprint acquisition apparatus according to claim 6, which is characterized in that the metal oxide layer is
One N-type metal oxide layer.
9. the manufacturing method of fingerprint acquisition apparatus according to claim 8, which is characterized in that the N-type metal oxide
Layer include selected from indium tin oxide, indium-zinc oxide, aluminium zinc oxide, cadmium tin-oxide, antimony tin oxide, zinc tin oxide,
One of group that zinc oxide and stannic oxide are constituted is a variety of.
10. the manufacturing method of fingerprint acquisition apparatus according to claim 6, which is characterized in that the polysilicon layer and institute
The intersection of metal oxide layer is stated in a uneven structure.
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| CN201811135390.8A CN109308470B (en) | 2018-09-28 | 2018-09-28 | Fingerprint sensing device and manufacturing method thereof |
| PCT/CN2019/085663 WO2020062869A1 (en) | 2018-09-28 | 2019-05-06 | Fingerprint sensing device and manufacturing method therefor |
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| CN201811135390.8A CN109308470B (en) | 2018-09-28 | 2018-09-28 | Fingerprint sensing device and manufacturing method thereof |
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| WO2020062869A1 (en) * | 2018-09-28 | 2020-04-02 | 武汉华星光电技术有限公司 | Fingerprint sensing device and manufacturing method therefor |
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