CN110120432B - Photoelectric conversion structure and display panel - Google Patents
Photoelectric conversion structure and display panel Download PDFInfo
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- CN110120432B CN110120432B CN201910435493.4A CN201910435493A CN110120432B CN 110120432 B CN110120432 B CN 110120432B CN 201910435493 A CN201910435493 A CN 201910435493A CN 110120432 B CN110120432 B CN 110120432B
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 8
- 238000000151 deposition Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention provides a photoelectric conversion structure and a display panel. The photoelectric conversion structure comprises a substrate, a switch tube arranged on the substrate and a photoelectric conversion element stacked above the switch tube, wherein the photoelectric conversion element comprises a photoelectric conversion layer and an electric signal output layer, the electric signal output layer is positioned between the photoelectric conversion layer and the switch tube, an insulating layer is further arranged between the electric signal output layer and the switch tube, a first structure is arranged in the insulating layer, the electric signal output layer is connected with a source electrode of the switch tube through the first structure, and the first structure can enable the surface of the electric signal output layer, which is in contact with the photoelectric conversion layer, to be smooth. The photoelectric conversion structure can enable the surface of the electric signal output layer, which is in contact with the photoelectric conversion layer, to be flat, so that the photoelectric conversion layer of the photoelectric conversion element formed on the electric signal output layer is flat, and the phenomenon of dark current rise caused by local electric field concentration when the photoelectric conversion element works due to the unevenness of the photoelectric conversion layer can be reduced or avoided.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a photoelectric conversion structure and a display panel.
Background
At present, photoelectric sensing devices play an important role in display panels, such as photoelectric compensation and photoelectric touch applications in display panels.
In a display panel, a photo sensor device is generally used in combination with a switching tube to perform its role in a display process. In order to increase the filling rate (i.e. the number) of the photo-sensor devices in the display panel, it is now common to arrange the photo-sensor devices and the switching tubes on top of each other, so that the area increase of the photo-sensor devices is no longer limited. The superposed electric signal output electrodes of the photoelectric sensors are connected with the source electrode of the switching tube through via holes, so that the electric signals output by the photoelectric sensors can be output through the switching tube; however, the signal output electrode of the photo-sensor deposited above the via hole usually has a step difference, which may cause a step difference at the via hole for each film layer in the photo-sensor, that is, the photo-sensor has a certain roughness at the via hole, thereby causing a dark current rise phenomenon due to local electric field concentration when the photo-sensor is in operation, and seriously affecting the performance of the photo-electric conversion device.
Disclosure of Invention
The invention provides a photoelectric conversion structure and a display panel aiming at the problems in the prior art. The photoelectric conversion structure can enable the surface of the electric signal output layer, which is in contact with the photoelectric conversion layer, to be flat, so that the photoelectric conversion layer of the photoelectric conversion element formed on the electric signal output layer is flat, and the phenomenon of dark current rise caused by local electric field concentration when the photoelectric conversion element works due to the unevenness of the photoelectric conversion layer can be reduced or avoided.
The invention provides a photoelectric conversion structure which comprises a substrate, a switching tube arranged on the substrate and a photoelectric conversion element superposed above the switching tube, wherein the photoelectric conversion element comprises a photoelectric conversion layer and an electric signal output layer, the electric signal output layer is positioned between the photoelectric conversion layer and the switching tube, an insulating layer is also arranged between the electric signal output layer and the switching tube, a first structure is arranged in the insulating layer, the electric signal output layer is connected with a source electrode of the switching tube through the first structure, and the first structure can enable the surface of the electric signal output layer, which is in contact with the photoelectric conversion layer, to be smooth.
Preferably, the first structure is a plurality of via holes formed in the insulating layer, and the plurality of via holes are arranged in an array.
Preferably, the shape of via hole is the cylinder, the aperture size range of via hole is 50nm-1 um.
Preferably, the via hole is in a wire grid shape, and the opening width of the wire grid ranges from 50nm to 1 um; the range of the opening length of the wire grid is 50nm-5 um.
Preferably, the slope angle of the via hole is 90 °.
Preferably, the electrical signal output layer includes a first conductive layer and a second conductive layer stacked on each other, the first conductive layer and the second conductive layer being sequentially distant from the insulating layer.
Preferably, the first conductive layer is made of titanium, aluminum or copper.
Preferably, the thickness of the first conductive layer is more than 20% of the distance between two adjacent vias.
Preferably, the second conductive layer is made of molybdenum.
The invention also provides a display panel comprising the photoelectric conversion structure.
The invention has the beneficial effects that: according to the photoelectric conversion structure provided by the invention, the first structure is arranged in the insulating layer, so that the electric signal output layer can be connected with the source electrode of the switching tube, the surface of the electric signal output layer, which is in contact with the photoelectric conversion layer, is smooth, the photoelectric conversion layer of the photoelectric conversion element formed on the electric signal output layer is smooth, the phenomenon of dark current rise caused by local electric field concentration of the photoelectric conversion element during working due to unevenness of the photoelectric conversion layer can be reduced or avoided, and the photoelectric conversion performance of the photoelectric conversion structure is effectively improved compared with the existing photoelectric sensing device structure.
According to the display panel provided by the invention, the display quality and the display effect of the display panel are improved by adopting the photoelectric conversion structure.
Drawings
Fig. 1 is a schematic sectional view of a structure of a photoelectric conversion structure in embodiment 1 of the present invention;
FIG. 2 is a top view of a via in an insulating layer in accordance with embodiment 1 of the present invention;
FIG. 3 is a sectional view showing the structure of an electric signal output layer in embodiment 1 of the present invention;
FIG. 4 is a schematic diagram of the electrical signal output layer forming a closed structure on the upper edge of the via hole;
fig. 5 is a top view of a via in an insulating layer in embodiment 2 of the invention.
Wherein the reference numerals are:
1. a switching tube; 11. a source electrode, 12, a grid electrode; 13. a drain electrode; 14. a gate insulating layer; 15. an active layer; 2. a photoelectric conversion element; 21. a photoelectric conversion layer; 22. an electrical signal output layer; 221. a first conductive layer; 222. a second conductive layer; 3. an insulating layer; 4. a via hole; 5. a transparent upper electrode; 6. a planarization layer; 7. an upper electrode trace; 8. a substrate.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the photoelectric conversion structure and the display panel of the present invention are further described in detail with reference to the drawings and the detailed description.
Example 1:
the present embodiment provides a photoelectric conversion structure, as shown in fig. 1, including a substrate 8, a switching tube 1 disposed on the substrate 8, and a photoelectric conversion element 2 stacked above the switching tube 1, where the photoelectric conversion element 2 includes a photoelectric conversion layer 21 and an electrical signal output layer 22, the electrical signal output layer 22 is located between the photoelectric conversion layer 21 and the switching tube 1, an insulating layer 3 is further disposed between the electrical signal output layer 22 and the switching tube 1, a first structure is disposed in the insulating layer 3, the electrical signal output layer 22 is connected to a source 11 of the switching tube 1 through the first structure, and the first structure can make a surface of the electrical signal output layer 22, which is in contact with the photoelectric conversion layer 21, flat.
Among them, the photoelectric conversion layer 21 of the photoelectric conversion element 2 can convert a received optical signal into an electric signal and output the electric signal through the electric signal output layer 22 and the switching tube 1. The switch tube 1 further comprises a gate electrode 12, a gate insulating layer 14, an active layer 15 and a drain electrode 13, wherein when the gate electrode 12 is turned on, the source electrode 11 and the drain electrode 13 are conducted, so that an electrical signal can be output to a required place.
By arranging the first structure in the insulating layer 3, not only the electrical signal output layer 22 can be connected with the source electrode 11 of the switching tube 1, but also the surface of the electrical signal output layer 22 contacting with the photoelectric conversion layer 21 can be flat, so that the photoelectric conversion layer 21 of the photoelectric conversion element 2 formed on the electrical signal output layer 22 is flat, and further the dark current rising phenomenon caused by local electric field concentration when the photoelectric conversion element 2 works due to unevenness of the photoelectric conversion layer 21 can be reduced or avoided.
In this embodiment, the first structure is a plurality of via holes 4 formed in the insulating layer 3, and the plurality of via holes 4 are arranged in an array. The arrangement of the plurality of via holes 4 can increase the contact area between the source electrode 11 and the electrical signal output layer 22, thereby reducing the contact resistance between the source electrode and the electrical signal output layer, and further ensuring accurate and reliable output of the electrical signal.
Preferably, as shown in fig. 2, the via 4 has a cylindrical shape, and the aperture size of the via 4 is in the range of 50nm to 1 um. The electrical signal output layer of the conventional photoelectric sensor device is also connected to the switch tube through the via hole, but the aperture size of the via hole 4 in this embodiment is much smaller than that of the conventional via hole. The aperture size of the via hole 4 is small, so that atoms of the electrical signal output layer 22 cannot reach the bottom of the via hole easily when the electrical signal output layer is deposited and formed, and the via hole 4 is deposited and blocked at the upper part of the bottom of the via hole, so that the via hole 4 forms a closed structure, which is equivalent to the reduction of the depth of the via hole, and therefore, the roughness (height difference) of the contact surface of the electrical signal output layer 22 and the photoelectric conversion layer 21 can be reduced, the roughness of the photoelectric conversion layer 21 is further reduced, and the phenomenon of dark current rise caused by local electric field concentration when the photoelectric conversion element 2 works due to the unevenness of the photoelectric conversion layer 21 is reduced.
In this embodiment, the slope angle of the via hole 4 is 90 °. Therefore, the electric signal output layer 22 right above the via hole 4 can form a closed structure, so that the electric signal output layer 22 tends to be flat, and the photoelectric conversion layer 21 tends to be flat.
Preferably, in the present embodiment, as shown in fig. 3, the electrical signal output layer 22 includes a first conductive layer 221 and a second conductive layer 222 stacked on each other, and the first conductive layer 221 and the second conductive layer 222 are sequentially distant from the insulating layer 3.
The first conductive layer 221 is made of titanium, aluminum, or copper. The deposition compactness of titanium, aluminium or copper material is better, and the step coverage is also better, makes its deposition rate slower through adjusting first conducting layer 221 when depositing simultaneously, can ensure that via hole 4 bottom can fully contact with first conducting layer 221 to the reliability of the electric signal of signal output layer 22 output signal has been promoted. The second conductive layer 222 is made of molybdenum. Molybdenum is a metal with a larger or looser particle size, and the deposition rate of the molybdenum is faster by adjusting the second conductive layer 222 during deposition, so that the step coverage of the second conductive layer 222 is reduced, and the second conductive layer 222 can form a closed structure on the upper edge of the via hole 4. With this arrangement, it is easy to prevent the atoms of the second conductive layer 222 from reaching the bottom of the hole during deposition, and the upper edge of the via hole 4 is deposited to block the via hole 4, so that a closed structure is formed on the upper edge of the via hole 4 (the hole depth is h2 from h1, as shown in fig. 4).
Preferably, in this embodiment, the thickness of the first conductive layer 221 is more than 20% of the distance between two adjacent vias 4. This ensures a good contact between the first conductive layer 221 and the second conductive layer 222 while ensuring a closed structure along the upper edge of the via hole 4, thereby ensuring reliability of electrical signal output.
In addition, in this embodiment, the photoelectric conversion structure further includes a transparent upper electrode 5, a planarization layer 6, and an upper electrode trace 7, which are sequentially disposed on the photoelectric conversion layer 21. The transparent upper electrode 5 is made of an ITO material, and functions as a metal mask plate when the photoelectric conversion layer 21 is patterned on one hand, and on the other hand, the transparent upper electrode 5 is a conventional structure in a photoelectric conversion device for facilitating the collection of charges when the photoelectric conversion layer 21 is subjected to photoelectric conversion, and details are not repeated here. The upper electrode trace 7 is used to provide the photoelectric conversion layer 21 with a reverse bias voltage required for photoelectric conversion thereof. Wherein the thickness range of the transparent upper electrode 5 is 40-70 nm; the thickness range of the planarization layer 6 is 1.5-2.5 μm; the thickness range of the upper electrode trace 7 is 200-400 nm.
The photoelectric conversion layer 21 includes an N (N-type Si) layer, an I (intrinsic Si) layer, and a P (P-type silicon) layer, wherein the thickness of the N layer is 20 to 50nm, the thickness of the I layer is 500 to 900nm, and the thickness of the P layer is 5 to 50 nm.
Based on the above structure of the photoelectric conversion structure, this embodiment also provides a method for manufacturing the structure, including:
1. and depositing a grid electrode on a glass or flexible substrate and patterning the grid electrode, wherein molybdenum (Mo) with the thickness ranging from 200 nm to 400nm is adopted for a grid electrode layer. And depositing a gate insulation layer (GI) by PECVD, wherein the GI layer is composed of SiN + SiO2 laminated layers, the thickness of the SiN is 50-150 nm, and the thickness of the SiO2 is 100-400 nm.
2. Depositing an active layer, which can be aSi or pSi crystallized from aSi, or an Oxide semiconductor (Oxide) active layer, including IGZO, IZO, etc., and can be amorphous, quasi-crystalline, or crystalline, and patterning by exposure and etching processes;
3. depositing a source drain layer, and patterning, for example, molybdenum (Mo) with the thickness ranging from 200 nm to 400 nm.
4. And depositing an insulating layer (PVX) and patterning to form a via hole, wherein the layer is composed of SiN + SiO2 laminated layers, the thickness of the SiN is 50-150 nm, and the thickness of the SiO2 is 100-400 nm. The formation of the via hole can adopt a nano-imprinting process, or can adopt an optical exposure machine with the accuracy meeting the requirement for exposure, and then a final pattern is formed through dry etching.
5. And sputtering and depositing an electric signal output layer, wherein the electric signal output layer is deposited in a layered manner in order to ensure the contact with the source electrode of the switching tube. The first conducting layer of metal materials with good compactness and good step coverage, such as Ti, Al or Cu, is deposited firstly, and meanwhile, the deposition rate is adjusted to be slower, so that the bottom of the hole can be ensured to be fully contacted with the source electrode.
6. And depositing metal with larger or looser grain size to form a second conductive layer, and adjusting to ensure that the deposition rate is higher, so that the step coverage of the layer is reduced, and the formation of a closed structure on the upper edge of the via hole is ensured.
7. An N (N-type Si) layer, an I (intrinsic Si) layer, and a P (P-type silicon) layer are sequentially deposited using PECVD to form a photoelectric conversion layer, and then a transparent upper electrode is prepared using sputter deposition.
8. And performing coating exposure on the planarization layer, and then depositing and patterning an upper electrode wiring layer to form an upper electrode wiring.
Example 2:
the present embodiment provides a photoelectric conversion structure, which is different from that in embodiment 1, as shown in fig. 5, a via hole 4 is in a wire grid shape, and an opening width W of the wire grid is in a range of 50nm to 1 um; the opening length L of the wire grid is in the range of 50nm-5 um.
The size of the wire-grid via 4 in this embodiment is also much smaller than the existing via size. The size of the via hole 4 is small, so that atoms of the electric signal output layer can not reach the bottom of the hole easily when the electric signal output layer is formed through deposition, and the via hole 4 is deposited and blocked at the upper part of the bottom of the hole, so that the via hole 4 forms a closed structure, which is equivalent to the reduction of the depth of the hole, and therefore, the roughness (height difference) of the contact surface of the electric signal output layer and the photoelectric conversion layer can be reduced, the roughness of the photoelectric conversion layer is further reduced, and the phenomenon that the dark current rises due to the local electric field concentration when the photoelectric conversion element works due to the unevenness of the photoelectric conversion layer is relieved or avoided.
Other structures and manufacturing methods of the photoelectric conversion structure in this embodiment are the same as those in embodiment 1, and are not described herein again.
Advantageous effects of examples 1 to 2: in the photoelectric conversion structure provided in embodiment 1-2, by providing the first structure in the insulating layer, not only the electrical signal output layer can be connected to the source electrode of the switching tube, but also the surface of the electrical signal output layer in contact with the photoelectric conversion layer can be made flat, so that the photoelectric conversion layer of the photoelectric conversion element formed on the electrical signal output layer is made flat, and thus a dark current rise phenomenon caused by local electric field concentration when the photoelectric conversion element is operating due to unevenness of the photoelectric conversion layer can be reduced or avoided.
Example 3:
the present embodiment provides a display panel including the photoelectric conversion structure in embodiment 1 or 2.
The photoelectric conversion structure plays a photoelectric compensation role or a photoelectric touch role in the display panel, and the two applications of the specific photoelectric conversion structure in the display panel are mature technologies and are not described again.
By adopting the photoelectric conversion structure in embodiment 1 or 2, the display quality and the display effect of the display panel are improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (6)
1. A photoelectric conversion structure comprises a substrate, a switch tube arranged on the substrate and a photoelectric conversion element superposed above the switch tube, wherein the photoelectric conversion element comprises a photoelectric conversion layer and an electric signal output layer, the electric signal output layer is positioned between the photoelectric conversion layer and the switch tube, and an insulating layer is also arranged between the electric signal output layer and the switch tube;
the electric signal output layer comprises a first conducting layer and a second conducting layer which are mutually overlapped, and the first conducting layer and the second conducting layer are sequentially far away from the insulating layer;
the first conducting layer is made of titanium, aluminum or copper; the second conducting layer is made of molybdenum;
the first structure is a plurality of via holes which are arranged in the insulating layer in an array.
2. The photoelectric conversion structure according to claim 1, wherein the via hole has a cylindrical shape, and an aperture size of the via hole is in a range of 50nm to 1 um.
3. The photoelectric conversion structure according to claim 1, wherein the via hole has a wire grid shape, and an opening width of the wire grid is in a range of 50nm to 1 um; the range of the opening length of the wire grid is 50nm-5 um.
4. The photoelectric conversion structure according to claim 2 or 3, wherein a slope angle of the via hole is 90 °.
5. The photoelectric conversion structure according to claim 1, wherein a thickness of the first conductive layer is 20% or more of a pitch between two adjacent vias.
6. A display panel comprising the photoelectric conversion structure according to any one of claims 1 to 5.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1319831A (en) * | 2000-01-31 | 2001-10-31 | 株式会社半导体能源研究所 | Attaching type area sensor and indicator having same |
| CN109727953A (en) * | 2017-10-27 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Reroute line structure |
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| JP4027465B2 (en) * | 1997-07-01 | 2007-12-26 | 株式会社半導体エネルギー研究所 | Active matrix display device and manufacturing method thereof |
| JP2002217195A (en) * | 2001-01-17 | 2002-08-02 | Mitsubishi Electric Corp | Semiconductor device and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1319831A (en) * | 2000-01-31 | 2001-10-31 | 株式会社半导体能源研究所 | Attaching type area sensor and indicator having same |
| CN109727953A (en) * | 2017-10-27 | 2019-05-07 | 台湾积体电路制造股份有限公司 | Reroute line structure |
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