CN101956156A - 物理气相沉积线圈的处理方法及物理气相沉积线圈结构 - Google Patents
物理气相沉积线圈的处理方法及物理气相沉积线圈结构 Download PDFInfo
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- CN101956156A CN101956156A CN2009100549450A CN200910054945A CN101956156A CN 101956156 A CN101956156 A CN 101956156A CN 2009100549450 A CN2009100549450 A CN 2009100549450A CN 200910054945 A CN200910054945 A CN 200910054945A CN 101956156 A CN101956156 A CN 101956156A
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CN 200910054945 CN101956156B (zh) | 2009-07-16 | 2009-07-16 | 物理气相沉积线圈的处理方法及物理气相沉积线圈结构 |
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CN 200910054945 CN101956156B (zh) | 2009-07-16 | 2009-07-16 | 物理气相沉积线圈的处理方法及物理气相沉积线圈结构 |
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CN101956156A true CN101956156A (zh) | 2011-01-26 |
CN101956156B CN101956156B (zh) | 2013-04-17 |
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CN 200910054945 Expired - Fee Related CN101956156B (zh) | 2009-07-16 | 2009-07-16 | 物理气相沉积线圈的处理方法及物理气相沉积线圈结构 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013047232A1 (ja) * | 2011-09-30 | 2013-04-04 | Jx日鉱日石金属株式会社 | スパッタリング用タンタル製コイルの再生方法及び該再生方法によって得られたタンタル製コイル |
CN108303596A (zh) * | 2018-01-16 | 2018-07-20 | 宁波市计量测试研究院(宁波市衡器管理所、宁波新材料检验检测中心) | 一种利用薄膜沉积技术制作超薄线圈的方法及超薄线圈 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2051395U (zh) * | 1989-08-19 | 1990-01-17 | 东南大学 | 优质内偏激磁线圈 |
US5707498A (en) * | 1996-07-12 | 1998-01-13 | Applied Materials, Inc. | Avoiding contamination from induction coil in ionized sputtering |
CN1794377A (zh) * | 2006-01-06 | 2006-06-28 | 浙江大学 | 溅射膜电极贴片电感及其生产方法 |
CN100460556C (zh) * | 2006-11-02 | 2009-02-11 | 上海交通大学 | 自由开放式线圈过滤器 |
-
2009
- 2009-07-16 CN CN 200910054945 patent/CN101956156B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013047232A1 (ja) * | 2011-09-30 | 2013-04-04 | Jx日鉱日石金属株式会社 | スパッタリング用タンタル製コイルの再生方法及び該再生方法によって得られたタンタル製コイル |
JP5280589B1 (ja) * | 2011-09-30 | 2013-09-04 | Jx日鉱日石金属株式会社 | スパッタリング用タンタル製コイルの再生方法及び該再生方法によって得られたタンタル製コイル |
CN103748258A (zh) * | 2011-09-30 | 2014-04-23 | 吉坤日矿日石金属株式会社 | 溅射用钽制线圈的再生方法及通过该再生方法得到的钽制线圈 |
US9536715B2 (en) | 2011-09-30 | 2017-01-03 | Jx Nippon Mining & Metals Corporation | Recycling method for tantalum coil for sputtering and tantalum coil obtained by the recycling method |
TWI602938B (zh) * | 2011-09-30 | 2017-10-21 | Jx Nippon Mining & Metals Corp | Regeneration method of tantalum coil for sputtering and tantalum coil obtained by the regeneration method |
CN108303596A (zh) * | 2018-01-16 | 2018-07-20 | 宁波市计量测试研究院(宁波市衡器管理所、宁波新材料检验检测中心) | 一种利用薄膜沉积技术制作超薄线圈的方法及超薄线圈 |
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Publication number | Publication date |
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CN101956156B (zh) | 2013-04-17 |
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Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121102 |
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Effective date of registration: 20121102 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20130417 Termination date: 20200716 |