CN101945819A - 微型机电设备及其制造方法 - Google Patents
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Abstract
本发明提供一种能够使间隙进一步狭小化的微型机电设备的结构及其制造方法。在本发明的微型机电设备中,共振子(22)和电极(21)相互对置,在该对置面上形成有一对热氧化膜(5、5),在两热氧化膜间具有狭小化了的间隙。在本发明的微型机电设备的制造工序中,对形成共振子(22)和电极(21)的Si层实施利用了光刻法和蚀刻法的加工,在形成作为间隙的槽(20)后,对该Si层实施热氧化处理,在槽(20)的对置面上形成一对Si热氧化膜(5、5)。
Description
技术领域
本发明涉及利用半导体领域的微细加工技术制造的微型机械共振器和微型机械电容器等微型机电设备的结构及其制造方法。
背景技术
近年来,开发了利用半导体领域的微细加工技术而将微细的机械结构与电路一体化形成的所谓微型机电系统(MEMS)技术,并且致力于其向滤波器或共振器的应用。
图6示出使用MEMS技术的现有的微型机械共振器(非专利文献1)。该微型机械共振器中,如图所示,在基板96上具有共振子90,该共振子90由棱柱状的共振梁92和用于支承该共振梁92的两端部的四根棱柱状的支承梁91~91构成,各支承梁91的基端部分别通过固定件(anchor)93固定在基板96上。由此,共振子90被保持在从基板96的表面稍浮起的位置。
此外,在共振子90的共振梁92的两侧隔着共振梁92的中央部配备有输入电极94和输出电极95,在共振梁92与两电极94、95之间形成有规定的间隙部G。
并且,高频电源6与输入电极94连接,且主电压电源7与一个固定件93连接。
在经由固定件93对共振子90施加直流电压Vp的状态下,对输入电极94输入高频信号Vi时,在输入电极94与共振梁92之间经由间隙部G产生交变静电力,该静电力使共振子90在与基板96的表面平行的面内振动。由于该共振子90的振动,而在共振梁92与两电极95、94之间形成的静电电容进行变化,且该静电电容的变化作为高频信号Io从输出电极95输出。
在上述微型机械共振器中,如图7所示,在共振梁92与两电极94、95之间形成的静电电容Co由间隙G的大小决定,间隙G越小,静电电容Co越大,在插入损失和阻抗等特性方面也优选小的间隙G。
因此,在上述微型机械共振器的制造工序中,为了在共振梁92与左右电极94、95之间形成间隙G,而采用利用了光刻法和蚀刻法的槽加工。
非专利文献1:W.-T.Hsu,J.R.Clark,and C.T.-C.Nguyen,“Q-optimized lateral freee-free beam micromechanical resonators”,Digest of Technical papers,the 11th Int.Conf.on Solid-State Sensors & Actuators(Transducers’01),Munich,Germany,June 10-14,2001,pp.1110-1113.
专利文献1:日本特表2002-535865号公报
但是,在将微型机械共振器的共振频率设定为从几百MHz带到GHz带时,必须使共振梁92与电极94、95之间的间隙G形成超微的数量级(0.1~0.5μm)。
然而,在现有的光刻法和蚀刻法的槽加工中,例如使用i线曝光机时,形成0.35μm左右的槽宽是极限,难以再进一步狭小化。
发明内容
因此,本发明提供一种能够使间隙进一步狭小化的微型机电设备的结构及其制造方法。
本发明的微型机电设备的两个部件相互对置,该微型机电设备具有与两个部件间的间隙相对应的静电电容,并基于该静电电容进行动作,其中,在所述两个部件的对置面上形成有一对热氧化膜,在两热氧化膜间具有狭小化了的间隙。
具体来说,所述一对部件中,一个部件为电极,另一个部件为共振子,通过高频信号输入使得在电极与共振子之间产生交变静电力,从而对共振子施加振动,并将电极与共振子之间的静电容量的变化作为高频信号进行输出。
在本发明的微型机电设备的制造方法中,为了在所述两个部件之间形成狭小化了的间隙,
实施:对形成所述两个部件的Si层实施使用了光刻法和蚀刻法的加工,而形成作为所述间隙的槽的第一间隙形成工序;对形成有所述槽的Si层实施热氧化处理,在所述槽的对置面上形成一对Si热氧化膜,而在两Si热氧化膜间形成狭小化了的间隙的第二间隙形成工序。
在第一间隙形成工序中,通过使用了例如i线曝光机的光刻法和蚀刻法,在作为所述两个部件的材料的Si层上形成0.35μm左右的槽。
然后,通过对形成有所述槽的Si层实施热氧化处理,而在所述槽的两侧面上形成Si热氧化膜,所述的Si热氧化膜相互对置,形成比0.35μm更狭小化的间隙(例如0.05~0.30μm)。
另外,根据热氧化处理,Si热氧化膜能够形成为至少0.01μm以上的厚度。
发明效果
根据本发明的微型机电设备及其制造方法,能够使间隙比以往更狭小化。
附图说明
图1是表示本发明的MEMS共振器的制造工序的前半部分的一系列附图。
图2是表示本发明的MEMS共振器的制造工序的后半部分的一系列附图。
图3是表示蚀刻法工序及热氧化工序的剖视图。
图4是说明利用热氧化膜进行的间隙形成的剖视图。
图5是表示仅具有真空间隙的现有的MEMS共振器和具有基于热氧化膜的间隙和真空间隙这两者的本发明的MEMS共振器的、间隙与静电电容的关系的图。
图6是表示现有的MEMS共振器的结构的立体图。
图7是表示利用现有的MEMS共振器中的真空间隙进行的静电电容形成的剖视图。
符号说明
1 Si层
2 Si层
3 SiO2层
4 抗蚀剂
5 Si热氧化膜
20 槽
21 电极
22 共振子
具体实施方式
以下,参照附图,基于对图6所示的MEMS共振器实施的方式,具体说明本发明。
图1及图2示出用于形成本发明的MEMS共振器的共振子及左右电极的工序P1~P7。另外,在图1及图2中,(A)是纵剖视图,(B)及(C)是俯视图。
首先,在图1的工序P1中,准备在成为基板的Si层1的表面层叠SiO2层3和Si层2而形成的SOI晶片。
接下来,在工序P2中,在Si层2的表面涂敷抗蚀剂4。然后,在工序P3中,对抗蚀剂4实施使用了i线曝光机的曝光和显影,从而形成具有间隙G’的槽图案。在此,间隙G’的极限是0.35μm。
接下来,在工序P4中,对Si层2实施干刻,在Si层2上加工槽20。
在图2的工序P5中剥离所述抗蚀剂4,然后在工序P6中对SiO2层3实施湿刻。由此形成宽度W的共振子22和左右电极21、21。另外,图2(C)省略上面的Si层2而示出SiO2层3及下面的Si层1的表面。
然后,在工序P7中,在氢气和氧气的混合气体气氛中实施基于900~1200℃温度的热氧化处理。在该热氧化处理中,氢燃烧,因而Si在水蒸气气氛中被氧化。
其结果是,在共振子22和两电极21、21的对置面上形成一对Si热氧化膜5、5,在两Si热氧化膜5、5之间形成间隙G。
在此,Si的氧化物即SiO2为稳定的材料,而且,若利用热氧化处理,则能够在狭小的间隙中形成高精度的薄膜,因此利用Si热氧化膜5、5的形成而得到的间隙G能够维持高精度且狭小化。
此外,Si热氧化膜在露出的Si表面上整体形成,但为了便于说明,而在附图中仅表示间隙面。
在如上所述的利用i线曝光及干刻的槽加工中,如图3(a)所示,槽20的宽度形成为0.35μm是极限,通过之后的热氧化处理,如图3(b)所示,在共振子22和两电极21、21之间分别形成相互对置的一对Si热氧化膜5、5,从而能够将两Si热氧化膜5、5间的间隙狭小化到例如0.1μm以下。
如图4(a)、(b)所示,在电极21与共振子22之间的槽20的两侧面上形成Si热氧化膜5的过程中,Si热氧化膜5以朝向槽20的侧面的内侧为44%、朝向外侧为56%的比例增长,从而在相互对置的一对Si热氧化膜5、5的对置面间形成间隙G。
如图4(b)所示,由于电极21与共振子22之间的静电电容C由一对Si热氧化膜5、5对置形成的真空间隙的静电电容C1和通过两Si热氧化膜5、5形成的两个静电电容C2、C2串联而成,因此下式成立。
(式1)
1/C=1/C2+1/C1+1/C2
在现有的MEMS共振器中,如图7所示,仅利用真空间隙形成静电电容Co,在真空的介电常数为ε0,对置面积为S,间隙为d0时,能够通过下式表示其静电电容C0。
(式2)
C0=ε0(S/d0)
由此,利用现有的MEMS共振器的间隙d0为0.35μm时的静电电容C0和热氧化后的间隙d1,能够通过下式表示图4所示的本发明的MEMS共振器中的静电电容C。
(式3)
C=(931000/(141d1+437500))·C0
图5表示仅基于真空间隙形成的静电容量Co以及由热氧化膜的间隙和真空间隙的组合构成的静电电容C的、以真空间隙为0.35μm时的静电电容为基准的静电电容比的变化。
如图5中虚线所示,若在形成0.35μm的真空间隙后形成热氧化膜而将该间隙狭小化到0.067μm,则能够得到与仅具有0.2μm的真空间隙的MEMS共振器同等的静电电容。
这样,根据本发明的MEMS共振器,通过形成Si热氧化膜5,能够使实质上的间隙比以往进一步狭小化,其结果是能够改善插入损失和阻抗等特性。
另外,本发明的各部分结构并不局限于上述的实施方式,而能够在权利要求书所述的技术范围进行各种变形。
此外,本发明并不局限于MEMS共振器,也可以对MEMS电容器等各种微型机电设备实施。
Claims (4)
1.一种微型机电设备,其两个部件相互对置,具有与两个部件间的间隙相对应的静电电容,并基于该静电电容进行动作,所述微型机电设备的特征在于,
在所述两个部件的对置面上形成一对热氧化膜,在两热氧化膜间具有狭小化了的间隙。
2.根据权利要求1所述的微型机电设备,其特征在于,
所述一对部件中,一个部件为电极,另一个部件为共振子,通过高频信号输入使得在电极与共振子之间产生交变静电力,从而对共振子施加振动,并将电极与共振子之间的静电容量的变化作为高频信号进行输出。
3.一种微型机电设备的制造方法,该微型机电设备的两个部件相互对置,该微型机电设备具有与两个部件间的间隙相对应的静电电容,并基于该静电电容进行动作,所述微型机电设备的制造方法的特征在于,具有:
对形成所述两个部件的Si层实施使用了光刻法和蚀刻法的加工,而形成作为所述间隙的槽的第一间隙形成工序;
对形成有所述槽的Si层实施热氧化处理,在所述槽的对置面上形成一对Si热氧化膜,而在两Si热氧化膜间形成狭小化了的间隙的第二间隙形成工序。
4.根据权利要求3所述的微型机电设备的制造方法,其特征在于,
在所述第一间隙形成工序中,通过形成所述槽而成形由所述Si层构成的电极和共振子,在所述第二间隙形成工序中,在电极侧的Si热氧化膜与共振子侧的Si热氧化膜的对置面之间形成所述狭小化了的间隙。
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JP2008035718A JP2009190150A (ja) | 2008-02-18 | 2008-02-18 | マイクロエレクトロメカニカルデバイス及びその製造方法。 |
PCT/JP2009/052145 WO2009104486A1 (ja) | 2008-02-18 | 2009-02-09 | マイクロエレクトロメカニカルデバイス及びその製造方法。 |
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CN103444079A (zh) * | 2011-02-17 | 2013-12-11 | Vtt科技研究中心 | 新颖微机械装置 |
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AT11920U3 (de) * | 2010-08-12 | 2012-03-15 | Oesterreichische Akademie Der Wissenschaften | Verfahren zur herstellung einer mems-vorrichtung mit hohem aspektverhältnis, sowie wandler und kondensator |
WO2012114655A1 (ja) * | 2011-02-21 | 2012-08-30 | パナソニック株式会社 | Mems共振器 |
WO2014058004A1 (ja) * | 2012-10-11 | 2014-04-17 | アルプス電気株式会社 | 可変容量コンデンサ |
JP6309283B2 (ja) * | 2014-01-24 | 2018-04-11 | 学校法人 関西大学 | エレクトレットとその製造方法、並びに、これを用いた発電装置 |
CN113572443B (zh) * | 2021-07-26 | 2024-02-09 | 吴江 | 一种基于电镀工艺的mems谐振器制备方法 |
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US6628177B2 (en) * | 2000-08-24 | 2003-09-30 | The Regents Of The University Of Michigan | Micromechanical resonator device and micromechanical device utilizing same |
US6621134B1 (en) * | 2002-02-07 | 2003-09-16 | Shayne Zurn | Vacuum sealed RF/microwave microresonator |
WO2005074502A2 (en) * | 2004-01-21 | 2005-08-18 | The Regents Of The University Of Michigan | High-q micromechanical resonator devices and filters utilizing same |
US7102467B2 (en) * | 2004-04-28 | 2006-09-05 | Robert Bosch Gmbh | Method for adjusting the frequency of a MEMS resonator |
US7522019B2 (en) * | 2004-06-04 | 2009-04-21 | The Regents Of The University Of California | Internal electrostatic transduction structures for bulk-mode micromechanical resonators |
US7176770B2 (en) * | 2004-08-24 | 2007-02-13 | Georgia Tech Research Corp. | Capacitive vertical silicon bulk acoustic resonator |
US7551043B2 (en) * | 2005-08-29 | 2009-06-23 | The Regents Of The University Of Michigan | Micromechanical structures having a capacitive transducer gap filled with a dielectric and method of making same |
WO2007056277A2 (en) * | 2005-11-04 | 2007-05-18 | Cornell Research Foundation, Inc. | Dielectrically transduced single-ended to differential mems filter |
US7847649B2 (en) * | 2005-12-23 | 2010-12-07 | Nxp B.V. | MEMS resonator, a method of manufacturing thereof, and a MEMS oscillator |
WO2007072408A2 (en) * | 2005-12-23 | 2007-06-28 | Nxp B.V. | A mems resonator, a method of manufacturing thereof, and a mems oscillator |
US7385334B1 (en) * | 2006-11-20 | 2008-06-10 | Sandia Corporation | Contour mode resonators with acoustic reflectors |
-
2008
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2009
- 2009-02-09 CN CN2009801053978A patent/CN101945819A/zh active Pending
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CN103444079A (zh) * | 2011-02-17 | 2013-12-11 | Vtt科技研究中心 | 新颖微机械装置 |
CN103444079B (zh) * | 2011-02-17 | 2017-05-31 | 芬兰国家技术研究中心股份公司 | 微机械装置及制造微机械装置的方法 |
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US20110001582A1 (en) | 2011-01-06 |
JP2009190150A (ja) | 2009-08-27 |
WO2009104486A1 (ja) | 2009-08-27 |
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