CN101920926A - Unmatched seal stress release structure - Google Patents
Unmatched seal stress release structure Download PDFInfo
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- CN101920926A CN101920926A CN2010102982868A CN201010298286A CN101920926A CN 101920926 A CN101920926 A CN 101920926A CN 2010102982868 A CN2010102982868 A CN 2010102982868A CN 201010298286 A CN201010298286 A CN 201010298286A CN 101920926 A CN101920926 A CN 101920926A
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- housing
- support ring
- mems chip
- chips welding
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Abstract
The invention relates to an unmatched seal stress release structure which comprises a seal support ring, wherein the seal support ring comprises a chip welding area positioned in an inner ring and a shell brazing area which is positioned at the outer ring of the chip welding area; and the shell brazing area is connected with the chip welding area by a stress release area. The seal support ring of the invention comprises the chip welding area, the shell brazing area and the stress release area; the shell brazing area is welded and fixed on an installation step; the chip welding area is used for installing and fixing an infrared MEMS (Micro Electro Mechanical System) chip, and the infrared MEMS chip is positioned in a vacuum environment; when the ambient temperature is changed, the infrared MEMS chip and the chip welding area generate stress, the stress accumulated on the infrared MEMS chip due to ambient temperature change can be released by the stress release area, thus, the infrared MEMS chip is not deformed; therefore, the invention improves the heat fatigability, vacuum degree, service life and reliability of the infrared MEMS chip and has convenient installation and use, small seal size and low seal cost.
Description
Technical field
The present invention relates to a kind of MEMS chip encapsulating structure that do not match, especially a kind of unmatched seal strain relief belongs to the technical field of microelectronics Packaging.
Background technology
At present, the MEMS chip has multiple encapsulating structure.Be encapsulated as example with infrared MEMS chip, during variations in temperature, owing to different the produce stress of MEMS chip with the thermal coefficient of expansion of chip supporting structure, form the encapsulating structure that do not match, described stress can make infrared MEMS chip image produce distortion.At present, for reducing the influence of variations in temperature to infrared MEMS die stress, mainly being by giving MEMS(Micro-Electro-Mechanical Systems) device vacuumizes, and uses that organic bonding is gluing to be connect and keep method such as device constant temperature to reduce the influence of stress to infrared MEMS device performance.
But the encapsulating structure of above-mentioned infrared MEMS chip, still can have following problem: during infrared MEMS chip Vacuum Package, can use the organic bonding glue of certain flexibility, described organic adhesive glue can reduce the vacuum and the life-span of device, and the volume of encapsulating structure is big, the packaging cost height.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of unmatched seal strain relief is provided, it is simple and compact for structure, and encapsulation volume is little, and cost is low, and heat-proof quality is good, installs and uses simple, safe and reliable.
According to technical scheme provided by the invention, described unmatched seal strain relief, comprise the sealing-in support ring, described sealing-in support ring comprises the chips welding district that is positioned at inner ring and is positioned at the shell brazing area of outer ring, described chips welding district that described shell brazing area links to each other by the stress relief zone with the chips welding interval.
Described stress relief zone is made up of a plurality of stress release pieces that are distributed in shell brazing area and chips welding interval symmetrically, and described stress release piece and shell brazing area and chips welding district are one-body molded.Described stress release piece is Z-shaped.
Described sealing-in support ring is square or circular.Described chips welding district is provided with fixedly connected infrared MEMS chip, and the shape of chips welding district and infrared MEMS chip is complementary; The center in chips welding district is provided with through hole.Described infrared MEMS chip welds fixing with the chips welding district mutually.
Described sealing-in support ring is positioned at housing, and the two ends of described housing are concaved with first locating slot and second locating slot respectively, is equipped with window in described first locating slot and second locating slot, forms between described window cavity is installed; Window and housing be sealing and fixing mutually; Housing is provided with sealed tube, and described sealed tube is connected with the installation cavity; Be provided with installation step in the described installation cavity, the shell brazing area of sealing-in support ring is fixedly welded on the installation step.
Described window welds fixing with housing mutually.The material of described window comprises glass.The axis of described sealed tube and the axis of housing are perpendicular; One end of sealed tube is embedded in the housing, and is connected with the installation cavity by the connector that is positioned on the housing.
Advantage of the present invention: the sealing-in support ring comprises chips welding district, shell brazing area and stress relief zone, and the shell brazing area welds fixing with installation step mutually; The chips welding district is used to install and fix infrared MEMS chip, and infrared MEMS chip is arranged in vacuum environment; When variation of ambient temperature, the stress that infrared MEMS chip and chips welding district produce, can discharge because of variation of ambient temperature by the stress relief zone and accumulate in stress on the infrared MEMS chip, make infrared MEMS chip not produce deformation, improve thermal fatigue, vacuum and the service life of infrared MEMS chip, increased infrared MEMS chip reliability, easy to install, encapsulation volume is little, and packaging cost is low.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the present invention.
Fig. 2 is the structural representation of another embodiment of the present invention.
Fig. 3 is user mode figure of the present invention.
The specific embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As Fig. 1 ~ shown in Figure 3: the present invention includes chips welding district 1, shell brazing area 2, stress relief zone 3, housing 4, first locating slot 5, window 6, infrared MEMS chip 7, installation step 8, sealed tube 9, connector 10, second locating slot 11, sealing-in support ring 13 and through hole 14.
As depicted in figs. 1 and 2: be the structural representation of sealing-in support ring 13 of the present invention.Described sealing-in support ring 13 comprises the chips welding district 1 that is positioned at inner ring and is positioned at the shell brazing area 2 of 1 outer ring, described chips welding district that 1 in described shell brazing area 2 and chips welding district are provided with stress relief zone 3.Described stress relief zone is made up of with the stress release piece in the shell brazing area 2 a plurality of chips welding districts 1 that are distributed in symmetrically, the two ends of described stress release piece fix with chips welding district 1 and shell brazing area 2 respectively, and stress relief zone 3 and chips welding district 1, shell brazing area 2 are one-body molded.Discharge the Z-shaped structure of piece; During making, on sealing-in support ring 13, form " Z " type structure by processes such as machining, laser ablations.The shape of the shape in chips welding district 1 and infrared MEMS chip 7 is complementary, and the center in chips welding district 1 is provided with through hole 14, thereby the light that two ends window 6 is injected can be radiated on the infrared MEMS chip 7.Among Fig. 1, sealing-in support ring 13 structure that is square, among Fig. 2, sealing-in support ring 13 rounded structures.The shell brazing area 2 of sealing-in support ring 13 is welded on the installation step 8, thereby sealing-in support ring 13 and housing 4 are fixed.When variation of ambient temperature, can produce stress because 13 material coefficient of thermal expansion coefficients of infrared MEMS chip 7 and sealing-in support ring are different, variation of ambient temperature is big more, and the stress of generation will be big more; The serviceability of infrared MEMS chip 7 can be guaranteed with the stress release of gathering on the infrared MEMS chip 7 in stress relief zone 3, improves the reliability of infrared MEMS chip 7 encapsulation.
As shown in Figure 3: be user mode figure of the present invention.Described housing 4 is cylindric, and the two ends of housing 4 are concaved with first locating slot 5 and second locating slot 11 respectively, and described second locating slot 11 communicates with the bottom land of first locating slot 5.Be equipped with window 6 in first locating slot 5 and second locating slot 11, described window 6 welds fixing with housing 4 mutually.6 of windows form installs cavity 12, and window 6 can seal described installation cavity 12 after fixing with housing 4.Be provided with installation step 8 in the described installation cavity 12, described installation step 8 is provided with sealing-in support ring 13, and described sealing-in support ring 13 is fixing with installation step 8 welding.Housing 4 is provided with sealed tube 9, and the axis of the axis of described sealed tube 9 and housing 4 is perpendicular; Housing 4 is provided with connector 10 corresponding to the sidewall that sealed tube 9 is set, and an end of sealed tube 9 is embedded on the sidewall of housing 4, and sealed tube 9 is connected with installation cavity 12 by connector 10; Can will cavity 12 state that be evacuated be installed by sealed tube 9.The material of window 6 comprises glass, can transmitted ray to infrared MEMS chip 7.
As Fig. 1 ~ shown in Figure 3: during use, infrared MEMS chip 7 is welded in the chips welding district 1 on the sealing-in support ring 13; Because sealing-in support ring 13 is provided with stress relief zone 3, in the time of can avoiding using organic adhesive glue fixedly, need to use getter to match, and periodic activated degasser recover the vacuum state in the cavity 12 with thermostat; Stress relief zone 3 has heat-blocking action simultaneously.The shell brazing area 2 of sealing-in support ring 13 is weldingly fixed on the installation step 8, thereby fixes with housing 4.Housing 4 adopts metal material to make.Cavity 12 sealings will be installed by window 6 in the two ends of housing 4, and sealed tube 9 will be installed the state that is evacuated in the cavity 12 simultaneously, then with the mouth of pipe sealing of sealed tube 9 corresponding to the other end that links to each other with housing 4.Window 6 is transmitted to light on the infrared MEMS chip 7, and infrared MEMS chip 7 can obtain to stablize, distinct image.When variation of ambient temperature, because the stress of the different generations of 13 material coefficient of thermal expansion coefficients of infrared MEMS chip 7 and sealing-in support ring, the deformation of stress release piece that can be by stress relief zone 3 discharges, can not influence the serviceability of infrared MEMS chip 7, the temperature of infrared MEMS chip 7 can slowly change simultaneously, can make stable, the distinct image of infrared MEMS chip 7 outputs; Improve the thermal fatigue property of infrared MEMS chip 7, the vacuum in the maintenance cavity 12, prolonged the service life of encapsulating structure, reduced the susceptibility of 7 pairs of environment temperatures of infrared MEMS chip.
The two ends of housing 4 of the present invention are provided with in first locating slot 5 and second locating slot, 11, the first locating slots 5 and second locating slot 11 and are provided with window 6, and window 6 welds mutually with housing 4 and fixes, thereby form installation cavity 12 4 of windows; Install in the cavity 12 sealing-in support ring 13 is set, sealing-in support ring 13 comprises chips welding district 1, shell brazing area 2 and stress relief zone 3, and shell brazing area 1 welds fixing with installation step 8 mutually.Be welded with infrared MEMS chip 7 in the chips welding district 1, be evacuated by sealed tube 9 in the installation cavity 12; When variation of ambient temperature, the stress that infrared MEMS chip 7 and chips welding district 1 produce, can discharge because of variation of ambient temperature by stress relief zone 3 and accumulate in stress on the infrared MEMS chip 7, make infrared MEMS chip 7 not produce deformation, improve thermal fatigue, vacuum and the service life of infrared MEMS chip 7, increased the reliability of infrared MEMS chip 7, easy to install, encapsulation volume is little, and packaging cost is low.
Claims (10)
1. unmatched seal strain relief, it is characterized in that: comprise sealing-in support ring (13), described sealing-in support ring (13) comprises the chips welding district (1) that is positioned at inner ring and is positioned at the shell brazing area (2) of outer ring, described chips welding district (1), links to each other by stress relief zone (3) between described shell brazing area (2) and chips welding district (1).
2. a kind of unmatched seal strain relief according to claim 1, it is characterized in that: described stress relief zone (3) are made up of a plurality of stress release pieces that are distributed in symmetrically between shell brazing area (2) and chips welding district (1), and described stress release piece and shell brazing area (2) and chips welding district (1) are one-body molded.
3. a kind of unmatched seal strain relief according to claim 2 is characterized in that: described stress release piece is Z-shaped.
4. a kind of unmatched seal strain relief according to claim 1 is characterized in that: described sealing-in support ring (13) is for square or circular.
5. a kind of unmatched seal strain relief according to claim 1 is characterized in that: described chips welding district (1) is provided with fixedly connected infrared MEMS chip (7), and chips welding district (1) is complementary with the shape of infrared MEMS chip (7); The center in chips welding district (1) is provided with through hole (14).
6. a kind of unmatched seal strain relief according to claim 5 is characterized in that: described infrared MEMS chip (7) welds fixing with chips welding district (1) mutually.
7. a kind of unmatched seal strain relief according to claim 1, it is characterized in that: described sealing-in support ring (13) is positioned at housing (4), the two ends of described housing (4) are concaved with first locating slot (5) and second locating slot (11) respectively, be equipped with window (6) in described first locating slot (5) and second locating slot (11), form between described window (6) cavity (12) is installed; Window (6) and housing (4) be sealing and fixing mutually; Housing (4) is provided with sealed tube (9), and described sealed tube (9) is connected with installation cavity (12); Be provided with installation step (8) in the described installation cavity (12), the shell brazing area (2) of sealing-in support ring (13) is fixedly welded on the installation step (8).
8. a kind of unmatched seal strain relief according to claim 7 is characterized in that: described window (6) welds fixing with housing (4) mutually.
9. according to claim 7 or 8 described a kind of unmatched seal strain reliefs, it is characterized in that: the material of described window (6) comprises glass.
10. a kind of unmatched seal strain relief according to claim 7 is characterized in that: the axis of the axis of described sealed tube (9) and housing (4) is perpendicular; One end of sealed tube (9) is embedded in the housing (4), and is connected with installation cavity (12) by the connector (10) that is positioned on the housing (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010298286 CN101920926B (en) | 2010-09-30 | 2010-09-30 | Unmatched seal stress release structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010298286 CN101920926B (en) | 2010-09-30 | 2010-09-30 | Unmatched seal stress release structure |
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| CN101920926A true CN101920926A (en) | 2010-12-22 |
| CN101920926B CN101920926B (en) | 2012-11-28 |
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| CN 201010298286 Active CN101920926B (en) | 2010-09-30 | 2010-09-30 | Unmatched seal stress release structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105347292A (en) * | 2015-11-13 | 2016-02-24 | 华天科技（昆山）电子有限公司 | Micro-electro-mechanical-systems (MEMS) capsulation structure capable of relieving cover plate stress and capsulation method thereof |
| CN105712283A (en) * | 2014-12-02 | 2016-06-29 | 北京自动化控制设备研究所 | LCC package stress release structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0949775A (en) * | 1995-08-09 | 1997-02-18 | Siemens Ag | Micromechanical device |
| CN1344670A (en) * | 2000-10-02 | 2002-04-17 | 诺基亚移动电话有限公司 | MIniature machinery structure |
| US20020067663A1 (en) * | 2000-08-11 | 2002-06-06 | Loeppert Peter V. | Miniature broadband acoustic transducer |
| US20080093748A1 (en) * | 2006-10-10 | 2008-04-24 | Powertech Technology Inc. | Semiconductor package and fabrication process thereof |
| CN101385392A (en) * | 2006-03-20 | 2009-03-11 | 沃福森微电子股份有限公司 | MEMS device |
| US20090151455A1 (en) * | 2007-12-14 | 2009-06-18 | Industrial Technology Research Institute | Sensing membrane and micro-electro-mechanical system device using the same |
| US20090166827A1 (en) * | 2007-12-27 | 2009-07-02 | Honeywell International, Inc. | Mechanical isolation for mems devices |
-
2010
- 2010-09-30 CN CN 201010298286 patent/CN101920926B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0949775A (en) * | 1995-08-09 | 1997-02-18 | Siemens Ag | Micromechanical device |
| US20020067663A1 (en) * | 2000-08-11 | 2002-06-06 | Loeppert Peter V. | Miniature broadband acoustic transducer |
| CN1344670A (en) * | 2000-10-02 | 2002-04-17 | 诺基亚移动电话有限公司 | MIniature machinery structure |
| CN101385392A (en) * | 2006-03-20 | 2009-03-11 | 沃福森微电子股份有限公司 | MEMS device |
| US20080093748A1 (en) * | 2006-10-10 | 2008-04-24 | Powertech Technology Inc. | Semiconductor package and fabrication process thereof |
| US20090151455A1 (en) * | 2007-12-14 | 2009-06-18 | Industrial Technology Research Institute | Sensing membrane and micro-electro-mechanical system device using the same |
| US20090166827A1 (en) * | 2007-12-27 | 2009-07-02 | Honeywell International, Inc. | Mechanical isolation for mems devices |
Non-Patent Citations (1)
| Title |
|---|
| ZHIYIN GAN等: "Getter free vacuum packaging for MEMS", 《SENSORS AND ACTUATORS A: PHYSICAL》, vol. 149, 12 November 2008 (2008-11-12) * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105712283A (en) * | 2014-12-02 | 2016-06-29 | 北京自动化控制设备研究所 | LCC package stress release structure |
| CN105712283B (en) * | 2014-12-02 | 2018-07-31 | 北京自动化控制设备研究所 | A kind of LCC encapsulation stress release structure |
| CN105347292A (en) * | 2015-11-13 | 2016-02-24 | 华天科技（昆山）电子有限公司 | Micro-electro-mechanical-systems (MEMS) capsulation structure capable of relieving cover plate stress and capsulation method thereof |
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|---|---|
| CN101920926B (en) | 2012-11-28 |
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Free format text: CORRECT: ADDRESS; FROM: 214028 TOWER 1A-5, BUILDING B, INTERNATIONAL TECHNOLOGY COOPERATION PARK, NO. 2, TAISHAN ROAD, WUXI ECONOMIC DEVELOPMENT ZONE, WUXI NEW DISTRICT, JIANGSU PROVINCE TO: 214028 TOWER 1A-5, BUILDING B, INTERNATIONAL TECHNOLOGY COOPERATION PARK, NO. 2, TAISHAN ROAD, WUXI NEW DISTRICT, JIANGSU PROVINCE |
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Effective date of registration: 20110711 Address after: 214028 B building, international science and technology cooperation Park, 2 Taishan Road, New District, Wuxi, Jiangsu, Applicant after: Wuxi Zhongwei High-tech Electronics Co., Ltd. Co-applicant after: China Electronics Technology Group Corporation No.58 Research Institute Address before: 214028 B building, international science and technology cooperation Park, 2 Taishan Road, Wuxi Economic Development Zone, Wuxi New District, Jiangsu,, China Applicant before: Wuxi Zhongwei High-tech Electronics Co., Ltd. |
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