CN101920926B - Unmatched seal stress release structure - Google Patents

Unmatched seal stress release structure Download PDF

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Publication number
CN101920926B
CN101920926B CN 201010298286 CN201010298286A CN101920926B CN 101920926 B CN101920926 B CN 101920926B CN 201010298286 CN201010298286 CN 201010298286 CN 201010298286 A CN201010298286 A CN 201010298286A CN 101920926 B CN101920926 B CN 101920926B
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area
chip
housing
stress
support ring
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CN 201010298286
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CN101920926A (en
Inventor
丁荣峥
张顺亮
唐桃扣
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Wuxi Zhongwei High-tech Electronics Co., Ltd.
CETC 58 Research Institute
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WUXI ZHONGWEI HIGH-TECH ELECTRONICS Co Ltd
CETC 58 Research Institute
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Publication of CN101920926A publication Critical patent/CN101920926A/en
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Abstract

The invention relates to an unmatched seal stress release structure which comprises a seal support ring, wherein the seal support ring comprises a chip welding area positioned in an inner ring and a shell brazing area which is positioned at the outer ring of the chip welding area; and the shell brazing area is connected with the chip welding area by a stress release area. The seal support ring of the invention comprises the chip welding area, the shell brazing area and the stress release area; the shell brazing area is welded and fixed on an installation step; the chip welding area is used for installing and fixing an infrared MEMS (Micro Electro Mechanical System) chip, and the infrared MEMS chip is positioned in a vacuum environment; when the ambient temperature is changed, the infrared MEMS chip and the chip welding area generate stress, the stress accumulated on the infrared MEMS chip due to ambient temperature change can be released by the stress release area, thus, the infrared MEMS chip is not deformed; therefore, the invention improves the heat fatigability, vacuum degree, service life and reliability of the infrared MEMS chip and has convenient installation and use, small seal size and low seal cost.

Description

A kind of unmatched seal strain relief
Technical field
The present invention relates to a kind of MEMS chip encapsulating structure that do not match, especially a kind of unmatched seal strain relief belongs to the technical field of microelectronics Packaging.
Background technology
At present, the MEMS chip has multiple encapsulating structure.Be encapsulated as example with infrared MEMS chip, during variations in temperature, owing to different the produce stress of MEMS chip with the thermal coefficient of expansion of chip supporting structure, form the encapsulating structure that do not match, said stress can make infrared MEMS chip image produce distortion.At present; For reducing the influence of variations in temperature to infrared MEMS die stress; Mainly be through vacuumizing for MEMS (Micro-Electro-Mechanical Systems) device, use that organic bonding is gluing to be connect and keep method such as device constant temperature to reduce the influence of stress to infrared MEMS device performance.
But the encapsulating structure of above-mentioned infrared MEMS chip; Still can have following problem: during infrared MEMS chip Vacuum Package, can use the organic bonding glue of certain flexibility, said organic adhesive glue can reduce the vacuum and the life-span of device; And the volume of encapsulating structure is big, and packaging cost is high.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of unmatched seal strain relief is provided, it is simple and compact for structure, and encapsulation volume is little, and cost is low, and heat-proof quality is good, installs and uses simple, safe and reliable.
According to technical scheme provided by the invention; Said unmatched seal strain relief; Comprise the sealing-in support ring; Said sealing-in support ring comprises the chips welding district that is positioned at inner ring and is positioned at the shell brazing area of outer ring, said chips welding district that said shell brazing area links to each other through the stress relief zone with chips welding is interval.
Said stress relief zone is made up of a plurality of Stress Release pieces that are distributed in shell brazing area and chips welding interval symmetrically, and said Stress Release piece and shell brazing area and chips welding district are one-body molded.Said Stress Release piece is Z-shaped.
Said sealing-in support ring is square or circular.Said chips welding district is provided with the infrared MEMS chip of fixed connection, and the shape of chips welding district and infrared MEMS chip is complementary; The center in chips welding district is provided with through hole.Said infrared MEMS chip welds fixing with the chips welding district mutually.
Said sealing-in support ring is positioned at housing, and the two ends of said housing are concaved with first locating slot and second locating slot respectively, is equipped with window in said first locating slot and second locating slot, forms between said window cavity is installed; Window and housing be sealing and fixing mutually; Housing is provided with sealed tube, and said sealed tube is connected with the installation cavity; Be provided with installation step in the said installation cavity, the shell brazing area of sealing-in support ring is fixedly welded on the installation step.
Said window welds fixing with housing mutually.The material of said window comprises glass.The axis of said sealed tube and the axis of housing are perpendicular; One end of sealed tube is embedded in the housing, and is connected with the installation cavity through the connector that is positioned on the housing.
Advantage of the present invention: the sealing-in support ring comprises chips welding district, shell brazing area and stress relief zone, and the shell brazing area welds fixing with installation step mutually; The chips welding district is used to install and fix infrared MEMS chip, and infrared MEMS chip is arranged in vacuum environment; When variation of ambient temperature, the stress that infrared MEMS chip and chips welding district produce can discharge because of variation of ambient temperature through the stress relief zone and accumulates in the stress on the infrared MEMS chip; Make infrared MEMS chip not produce deformation; Improve thermal fatigue, vacuum and the service life of infrared MEMS chip, increased infrared MEMS chip reliability, easy to install; Encapsulation volume is little, and packaging cost is low.
Description of drawings
Fig. 1 is the structural representation of one embodiment of the present invention.
Fig. 2 is the structural representation of another embodiment of the present invention.
Fig. 3 is user mode figure of the present invention.
The specific embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
Like Fig. 1 ~ shown in Figure 3: the present invention includes chips welding district 1, shell brazing area 2, stress relief zone 3, housing 4, first locating slot 5, window 6, infrared MEMS chip 7, installation step 8, sealed tube 9, connector 10, second locating slot 11, sealing-in support ring 13 and through hole 14.
As depicted in figs. 1 and 2: as to be the structural representation of sealing-in support ring 13 of the present invention.Said sealing-in support ring 13 comprises the chips welding district 1 that is positioned at inner ring and is positioned at the shell brazing area 2 of 1 outer ring, said chips welding district that 1 in said shell brazing area 2 and chips welding district are provided with stress relief zone 3.Said stress relief zone is made up of with the Stress Release piece in the shell brazing area 2 a plurality of chips welding districts 1 that are distributed in symmetrically; The two ends of said Stress Release piece fix with chips welding district 1 and shell brazing area 2 respectively, and stress relief zone 3 and chips welding district 1, shell brazing area 2 are one-body molded.The Z-shaped structure of release block; During making, on sealing-in support ring 13, form " Z " type structure through processes such as machining, laser ablations.The shape of the shape in chips welding district 1 and infrared MEMS chip 7 is complementary, and the center in chips welding district 1 is provided with through hole 14, thereby the irradiate light that can two ends window 6 be injected is on infrared MEMS chip 7.Among Fig. 1, sealing-in support ring 13 structure that is square, among Fig. 2, sealing-in support ring 13 rounded structures.The shell brazing area 2 of sealing-in support ring 13 is welded on the installation step 8, thereby sealing-in support ring 13 and housing 4 are fixed.When variation of ambient temperature, can produce stress because 13 material coefficient of thermal expansion coefficients of infrared MEMS chip 7 and sealing-in support ring are different, variation of ambient temperature is big more, and the stress of generation will be big more; The serviceability of infrared MEMS chip 7 can be guaranteed with the Stress Release of gathering on the infrared MEMS chip 7 in stress relief zone 3, improves the reliability of infrared MEMS chip 7 encapsulation.
As shown in Figure 3: as to be user mode figure of the present invention.Said housing 4 is cylindric, and the two ends of housing 4 are concaved with first locating slot 5 and second locating slot 11 respectively, and said second locating slot 11 communicates with the bottom land of first locating slot 5.Be equipped with window 6 in first locating slot 5 and second locating slot 11, said window 6 welds fixing with housing 4 mutually.6 of windows form installs cavity 12, and window 6 can seal said installation cavity 12 after fixing with housing 4.Be provided with installation step 8 in the said installation cavity 12, said installation step 8 is provided with sealing-in support ring 13, and said sealing-in support ring 13 is fixing with installation step 8 welding.Housing 4 is provided with sealed tube 9, and the axis of the axis of said sealed tube 9 and housing 4 is perpendicular; Housing 4 is provided with connector 10 corresponding to the sidewall that sealed tube 9 is set, and an end of sealed tube 9 is embedded on the sidewall of housing 4, and sealed tube 9 is connected with installation cavity 12 through connector 10; Can be through sealed tube 9 with cavity 12 state that is evacuated is installed.The material of window 6 comprises glass, can transmitted ray to infrared MEMS chip 7.
Like Fig. 1 ~ shown in Figure 3: during use, infrared MEMS chip 7 is welded in the chips welding district 1 on the sealing-in support ring 13; Because sealing-in support ring 13 is provided with stress relief zone 3, can avoid the use of organic adhesive glue fixedly the time, need to use getter to match, and periodically activated degasser recover the interior vacuum state of cavity 12 with thermostat; Stress relief zone 3 has heat-blocking action simultaneously.The shell brazing area 2 of sealing-in support ring 13 is weldingly fixed on the installation step 8, thereby fixes with housing 4.Housing 4 adopts metal material to process.Cavity 12 sealings will be installed through window 6 in the two ends of housing 4, and sealed tube 9 will be installed the state that is evacuated in the cavity 12 simultaneously, then with the mouth of pipe sealing of sealed tube 9 corresponding to the other end that links to each other with housing 4.Window 6 is transmitted to light on the infrared MEMS chip 7, and infrared MEMS chip 7 can obtain to stablize, distinct image.When variation of ambient temperature; Because the stress of the different generations of 13 material coefficient of thermal expansion coefficients of infrared MEMS chip 7 and sealing-in support ring; The deformation of Stress Release piece that can be through stress relief zone 3 discharges; Can not influence the serviceability of infrared MEMS chip 7, the temperature of infrared MEMS chip 7 can slowly change simultaneously, can make stable, the distinct image of infrared MEMS chip 7 outputs; Improve the thermal fatigue property of infrared MEMS chip 7, the vacuum in the maintenance cavity 12, prolonged the service life of encapsulating structure, reduced the susceptibility of 7 pairs of environment temperatures of infrared MEMS chip.
The two ends of housing 4 of the present invention are provided with in first locating slot 5 and second locating slot, 11, the first locating slots 5 and second locating slot 11 and are provided with window 6, and window 6 welds mutually with housing 4 and fixes, thereby form installation cavity 12 4 of windows; Install in the cavity 12 sealing-in support ring 13 is set, sealing-in support ring 13 comprises chips welding district 1, shell brazing area 2 and stress relief zone 3, and shell brazing area 1 welds fixing with installation step 8 mutually.Be welded with infrared MEMS chip 7 in the chips welding district 1, be evacuated through sealed tube 9 in the installation cavity 12; When variation of ambient temperature, the stress that infrared MEMS chip 7 and chips welding district 1 produce can discharge because of variation of ambient temperature through stress relief zone 3 and accumulates in the stress on the infrared MEMS chip 7; Make infrared MEMS chip 7 not produce deformation; Improve thermal fatigue, vacuum and the service life of infrared MEMS chip 7, increased the reliability of infrared MEMS chip 7, easy to install; Encapsulation volume is little, and packaging cost is low.

Claims (3)

1. unmatched seal strain relief; Comprise sealing-in support ring (13), Stress Release piece; Said sealing-in support ring (13) comprises the chips welding district (1) that is positioned at inner ring and is positioned at the shell brazing area (2) of outer ring, said chips welding district (1), links to each other through stress relief zone (3) between the said shell brazing area (2) that is positioned at outer ring, chips welding district (1) and chips welding district (1); Said stress relief zone is made up of with the Stress Release piece in the shell brazing area (2) a plurality of chips welding districts (1) that are distributed in symmetrically; The two ends of said Stress Release piece fix with chips welding district (1) and shell brazing area (2) respectively, and stress relief zone (3) and chips welding district (1), shell brazing area (2) are one-body molded;
It is characterized in that: said sealing-in support ring (13) is positioned at housing (4); The two ends of said housing (4) are concaved with first locating slot (5) and second locating slot (11) respectively; Be equipped with window (6) in said first locating slot (5) and second locating slot (11), form between said window (6) cavity (12) is installed; Window (6) and housing (4) be sealing and fixing mutually; Housing (4) is provided with sealed tube (9), and said sealed tube (9) is connected with installation cavity (12); Be provided with installation step (8) in the said installation cavity (12), the shell brazing area (2) of sealing-in support ring (13) is fixedly welded on the installation step (8).
2. a kind of unmatched seal strain relief according to claim 1 is characterized in that: said window (6) welds fixing with housing (4) mutually.
3. a kind of unmatched seal strain relief according to claim 1 is characterized in that: the axis of the axis of said sealed tube (9) and housing (4) is perpendicular; One end of sealed tube (9) is embedded in the housing (4), and is connected with installation cavity (12) through the connector (10) that is positioned on the housing (4).
CN 201010298286 2010-09-30 2010-09-30 Unmatched seal stress release structure Active CN101920926B (en)

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CN101920926B true CN101920926B (en) 2012-11-28

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Publication number Priority date Publication date Assignee Title
CN105712283B (en) * 2014-12-02 2018-07-31 北京自动化控制设备研究所 A kind of LCC encapsulation stress release structure
CN105347292A (en) * 2015-11-13 2016-02-24 华天科技(昆山)电子有限公司 Micro-electro-mechanical-systems (MEMS) capsulation structure capable of relieving cover plate stress and capsulation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
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EP0758080B1 (en) * 1995-08-09 1998-09-30 Siemens Aktiengesellschaft Micromechanical device with stress-free perforated diaphragm
US6535460B2 (en) * 2000-08-11 2003-03-18 Knowles Electronics, Llc Miniature broadband acoustic transducer
FI111457B (en) * 2000-10-02 2003-07-31 Nokia Corp Micromechanical structure
GB0605576D0 (en) * 2006-03-20 2006-04-26 Oligon Ltd MEMS device
US7432601B2 (en) * 2006-10-10 2008-10-07 Powertech Technology Inc. Semiconductor package and fabrication process thereof
TWI358235B (en) * 2007-12-14 2012-02-11 Ind Tech Res Inst Sensing membrane and micro-electro-mechanical syst
US7830003B2 (en) * 2007-12-27 2010-11-09 Honeywell International, Inc. Mechanical isolation for MEMS devices

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* Cited by examiner, † Cited by third party
Title
JP特開平9-49775A 1997.02.18

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Free format text: CORRECT: ADDRESS; FROM: 214028 TOWER 1A-5, BUILDING B, INTERNATIONAL TECHNOLOGY COOPERATION PARK, NO. 2, TAISHAN ROAD, WUXI ECONOMIC DEVELOPMENT ZONE, WUXI NEW DISTRICT, JIANGSU PROVINCE TO: 214028 TOWER 1A-5, BUILDING B, INTERNATIONAL TECHNOLOGY COOPERATION PARK, NO. 2, TAISHAN ROAD, WUXI NEW DISTRICT, JIANGSU PROVINCE

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