CN101920435A - Preparation process of sputtering tantalum ring - Google Patents
Preparation process of sputtering tantalum ring Download PDFInfo
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- CN101920435A CN101920435A CN 201010258806 CN201010258806A CN101920435A CN 101920435 A CN101920435 A CN 101920435A CN 201010258806 CN201010258806 CN 201010258806 CN 201010258806 A CN201010258806 A CN 201010258806A CN 101920435 A CN101920435 A CN 101920435A
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Abstract
The invention relates to a preparation process of a sputtering tantalum ring, comprising the following steps of: firstly preparing a tantalum strip for the ring, welding both ends of the circularly rolled tantalum strip, carrying out thermal treatment and profiling, knurling the inner surface and the outer surface of the tantalum strip, cutting off welded junctions, and carrying out end knurling; then processing a welding notch on the surface of the ring, carrying out acid washing, welding a boss on the welding notch on the surface of the ring, and then carrying out acid washing again; and blasting sand in the specified zone, and finally cleaning by utilizing ultrasonic waves. Each performance index of the sputtering tantalum ring prepared in the preparation process meets the use requirement of a semi-conductor industry, and the preparation process has the advantages of simplicity, low processing difficulty and high processing efficiency.
Description
Technical field
The invention belongs to the mechanical processing technique of tantalum material, particularly relate to a kind of preparation technology of sputtering tantalum ring.
Background technology
Physical vapor deposition (PVD) is one of technology of most critical in the semiconductor chip production process, its objective is the form of the compound of metal or metal with film deposited on silicon chip or other the substrate, and, finally form distribution structure complicated in the semiconductor chip subsequently by the cooperating of technologies such as photoetching and corrosion.Physical vapour deposition (PVD) is finished by the sputter board, and sputtering tantalum ring is exactly a very important crucial consumptive material that is used for above-mentioned technology.
The main effect of sputtering tantalum ring in semiconductor technology has 2 points:
First: the movement locus of constraint sputtering particle, play the effect of focusing;
Second: the big particle that produces in the absorption sputter procedure, play the effect of purification.
Because the special environment for use of sputtering tantalum ring, its technical requirement mainly contains:
First: the material grains degree is in 100-300 microns scope;
Second: surface knurling is the rhombus that 80TPI protrudes, and 80 road decorative patterns had both been arranged in one inch scope, and annular knurl is even, the no visible dots in surface;
The 3rd: the drawing requirement is satisfied in concave groove moulding and ring assembling;
The 4th: welding meets the requirements of the customers according to the welding of AMS 2681A standard.
The 5th: pickling, cleaning meet the standard that Material Used proposes.
Because above-mentioned specification requirement causes the difficulty of processing of sputtering tantalum ring to increase.The processing of sputtering tantalum ring all is to be placed on external production at present, and domestic also do not have similar technology to exist.
Summary of the invention
The objective of the invention is to overcome the defective of above-mentioned prior art, a kind of technology of simplifying when obtaining the semicon industry instructions for use is provided, reduce difficulty of processing, improve the preparation technology of the sputtering tantalum ring of working (machining) efficiency.
For achieving the above object, the present invention adopts following technical proposals:
A kind of preparation technology of sputtering tantalum ring is characterized in that technical process is: at first prepare ring tantalum bar, behind the volume circle tantalum bar two ends are welded, heat treatment, shaping, surfaces externally and internally annular knurl, cut off weld bond, carry out the termination annular knurl, then in ring Surface Machining welding notch, pickling, boss is welded on the welding notch on above-mentioned ring surface, pickling once more, sandblast in the regulation zone utilizes ultrasonic wave to clean at last and gets final product;
Above-mentioned ring is at first to adopt the mode of first hit square and then make flat to forge in the tantalum material with the preparation process of tantalum bar, heat treatment 60min～120min under 1000 ℃～1100 ℃ temperature conditions subsequently, adopt commutation rolling split rolling method, under 1000 ℃～1100 ℃ temperature conditions, carry out heat treatment second time 60min～120min, it is rolling that the employing unidirection rolling carries out finished product, carry out heat treatment 120min～180min for the third time at last under 1200 ℃～1400 ℃ temperature conditions, the smoothing blanking promptly;
Above-mentioned volume bowlder is controlled circularity≤1.0mm at the upper and lower surface pad rubber skin of tantalum bar;
Weld width≤5mm during above-mentioned welding, the weld seam polishing, postwelding is eliminated projecting point by grinding;
Above-mentioned heat treatment is meant that it is to be incubated 60～120 minutes under 30%～35% the condition of tantalum fusing point that the tantalum bar is placed temperature;
Above-mentioned shaping control circularity≤0.2mm;
Above-mentioned surfaces externally and internally annular knurl and termination annular knurl are meant on engine lathe, utilize knurled wheel to carry out surface knurling;
Above-mentioned acid cleaning process is for utilizing the mixed acid of hydrofluoric acid: hydrochloric acid=3:1, pickling 2～10 minutes.
Satisfy the instructions for use of semicon industry by the every performance indications of sputtering tantalum ring of the present invention preparation, technology of the present invention is simple, and difficulty of processing is little, the working (machining) efficiency height.
Description of drawings
Fig. 1 is the outline drawing of sputtering tantalum ring of the present invention.
The specific embodiment
The step of preparation process of sputtering tantalum ring of the present invention is:
1, ring prepares with the tantalum bar
Require crystallite dimension to satisfy product requirement, satisfy the requirement of following process with plate difference and surface quality, concrete technology can adopt:
At first adopt the mode of first hit square and then make flat to forge, total working modulus 65%～75%; Under 1000 ℃～1100 ℃ temperature conditions, carry out heat treatment first time 60min～120min; Adopt the rolling mode split rolling method of commutation, total working modulus is 70%～80%; Under 1000 ℃～1100 ℃ temperature conditions, carry out heat treatment second time 60min～120min; It is rolling that the method for employing unidirection rolling is carried out finished product, and total working modulus is 70%～80%; Under 1200 ℃～1400 ℃ temperature conditions, carry out heat treatment 120min～180min for the third time; The smoothing blanking, the preparation of tantalum bar is finished.
2, volume circle
Utilize accurate furling plate round machine, circularity≤1.0mm.
3, welding
In order to realize the annular knurl requirement of ring surfaces externally and internally, the ring behind the volume circle is carried out the termination welding, weld width≤5mm, the necessary polishing of weld seam, postwelding is eliminated projecting point by grinding.
4, heat treatment
Main purpose reduces weld hardness, simultaneously must assurance can not change the interior tissue of material.Concrete technology is: placing temperature is insulation 60 minutes to 120 minutes under 30%～35% the condition of tantalum fusing point.
5, shaping
The welding ring is carried out shaping, guarantees later stage annular knurl requirement, circularity≤0.2mm.
6, surfaces externally and internally annular knurl
Utilize knurled wheel to carry out surface knurling on engine lathe, annular knurl is in proper order: outer surface → inner surface → side, and the necessary uniformity of surfaces externally and internally annular knurl, the surface does not have visual flat spot.
7, weld bond cuts off
After finishing the surfaces externally and internally annular knurl, in order to realize the termination annular knurl, weld bond is cut off, cut-out is of a size of: 6.35mm.
8, termination annular knurl
Annular knurl requires with the surfaces externally and internally annular knurl.
9, welding notch processing
At tantalum bar 1 outer surface processing welding notch, welding notch size Φ 25.4mm * 1.27mm and boss 2 flange places cooperate, and satisfy the welding matching requirements of boss and ring.
10, pickling
Utilize hydrofluoric acid: the mixed acid of hydrochloric acid=3:1, cleaning surfaces and Impurity removal are carried out in pickling 5～10 minutes, satisfy welding requirements.
11, boss and ring body welding
Boss is welded on the welding notch on above-mentioned ring surface, face of weld is smooth full, does not have blemish such as hole point, salient point, satisfies AMS 2681A standard.
12, pickling once more
Utilize hydrofluoric acid: the mixed acid of hydrochloric acid=3:1, cleaning surfaces and Impurity removal are carried out in pickling 2～5 minutes, satisfy the sandblast requirement;
13, sandblast
Carry out blasting treatment in the regulation zone, can not there be the annular knurl line in the sandblast zone.
14, clean
Utilize ultrasonic wave to clean, reach the semiconductor instructions for use after the cleaning.
Claims (8)
1. the preparation technology of a sputtering tantalum ring is characterized in that technical process is: at first prepare ring tantalum bar, behind the volume circle tantalum bar two ends are welded, heat treatment, shaping, surfaces externally and internally annular knurl, cut off weld bond, carry out the termination annular knurl, then in ring Surface Machining welding notch, pickling, boss is welded on the welding notch on above-mentioned ring surface, pickling once more, sandblast in the regulation zone utilizes ultrasonic wave to clean at last and gets final product.
2. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned ring is at first to adopt the mode of first hit square and then make flat to forge in the tantalum material with the preparation process of tantalum bar, heat treatment 60min～120min under 1000 ℃～1100 ℃ temperature conditions subsequently, adopt commutation rolling split rolling method, under 1000 ℃～1100 ℃ temperature conditions, carry out heat treatment second time 60min～120min, it is rolling that the employing unidirection rolling carries out finished product, carry out heat treatment 120min～180min for the third time at last under 1200 ℃～1400 ℃ temperature conditions, the smoothing blanking promptly.
3. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned volume bowlder is controlled circularity≤1.0mm at the upper and lower surface pad rubber skin of tantalum bar.
4. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: weld width≤5mm during above-mentioned welding, the weld seam polishing, postwelding is eliminated projecting point by grinding.
5. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned heat treatment is meant that it is to be incubated 60～120 minutes under 30%～35% the condition of tantalum fusing point that the tantalum bar is placed temperature.
6. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned shaping control circularity≤0.2mm.
7. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned surfaces externally and internally annular knurl and termination annular knurl are meant on engine lathe, utilize knurled wheel to carry out surface knurling.
8. according to the preparation technology of the described sputtering tantalum ring of claim 1, it is characterized in that: above-mentioned acid cleaning process is for utilizing the mixed acid of hydrofluoric acid: hydrochloric acid=3:1, pickling 2～10 minutes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010258806 CN101920435B (en) | 2010-08-20 | 2010-08-20 | Preparation process of sputtering tantalum ring |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010258806 CN101920435B (en) | 2010-08-20 | 2010-08-20 | Preparation process of sputtering tantalum ring |
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| CN101920435A true CN101920435A (en) | 2010-12-22 |
| CN101920435B CN101920435B (en) | 2012-01-11 |
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| CN 201010258806 Expired - Fee Related CN101920435B (en) | 2010-08-20 | 2010-08-20 | Preparation process of sputtering tantalum ring |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102990234A (en) * | 2012-08-16 | 2013-03-27 | 宁夏东方钽业股份有限公司 | Method for welding lug bosses and ring piece of sputtering tantalum ring |
| CN102990216A (en) * | 2012-08-16 | 2013-03-27 | 宁夏东方钽业股份有限公司 | Method for welding bosses of sputtering tantalum ring pieces onto ring body under one-time vacuum condition |
| CN103084984A (en) * | 2011-11-01 | 2013-05-08 | 上海科秉电子科技有限公司 | Washing method for groove etching device parts |
| CN104561912A (en) * | 2013-10-15 | 2015-04-29 | 宁波江丰电子材料股份有限公司 | Production method of titanium focus ring |
| CN104668910A (en) * | 2015-02-06 | 2015-06-03 | 西安交通大学 | Strain induced type bending and semi-solid die forging compounding technology for large-sized ring piece |
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| CN106884142A (en) * | 2017-03-14 | 2017-06-23 | 郭和谦 | A kind of preparation method of high-quality TiAlN thin film |
| CN106475728B (en) * | 2015-08-24 | 2018-05-18 | 宁波江丰电子材料股份有限公司 | A kind of repairing and reusing method of column handle on tantalum ring |
| CN108396297A (en) * | 2018-06-01 | 2018-08-14 | 宁波江丰电子材料股份有限公司 | Sputter ring |
| CN110670031A (en) * | 2019-10-21 | 2020-01-10 | 宁波江丰电子材料股份有限公司 | Tantalum ring, preparation method thereof, sputtering device containing tantalum ring and application of sputtering device |
| CN110904415A (en) * | 2019-11-28 | 2020-03-24 | 宁波江丰电子材料股份有限公司 | Anti-loosening Ta ring and design method thereof |
| CN111469052A (en) * | 2020-04-03 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of ring piece |
| CN111575663A (en) * | 2020-05-15 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Magnetron sputtering ring piece and machining method of matching hole of magnetron sputtering ring piece |
| CN112475788A (en) * | 2020-10-27 | 2021-03-12 | 有研亿金新材料有限公司 | Method for manufacturing copper focusing ring |
| CN112522502A (en) * | 2020-11-11 | 2021-03-19 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of ring piece |
| CN112958997A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for repairing and recycling 80TPI tantalum ring piece |
| CN115319399A (en) * | 2022-08-26 | 2022-11-11 | 宁波江丰电子材料股份有限公司 | Method for repairing semiconductor sputtering tantalum ring |
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| EP1496130A1 (en) * | 1998-11-25 | 2005-01-12 | Cabot Corporation | High purity tantalum for producing sputter targets |
| CN1659305A (en) * | 2002-09-20 | 2005-08-24 | 株式会社日矿材料 | Tantalum sputtering target and method for preparation thereof |
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Patent Citations (4)
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| EP1496130A1 (en) * | 1998-11-25 | 2005-01-12 | Cabot Corporation | High purity tantalum for producing sputter targets |
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Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103084984A (en) * | 2011-11-01 | 2013-05-08 | 上海科秉电子科技有限公司 | Washing method for groove etching device parts |
| CN103084984B (en) * | 2011-11-01 | 2015-07-08 | 上海科秉电子科技有限公司 | Washing method for groove etching device parts |
| CN102990234A (en) * | 2012-08-16 | 2013-03-27 | 宁夏东方钽业股份有限公司 | Method for welding lug bosses and ring piece of sputtering tantalum ring |
| CN102990216A (en) * | 2012-08-16 | 2013-03-27 | 宁夏东方钽业股份有限公司 | Method for welding bosses of sputtering tantalum ring pieces onto ring body under one-time vacuum condition |
| CN102990234B (en) * | 2012-08-16 | 2016-04-13 | 宁夏东方钽业股份有限公司 | The welding method of a kind of sputtering tantalum ring boss and ring body |
| CN104561912A (en) * | 2013-10-15 | 2015-04-29 | 宁波江丰电子材料股份有限公司 | Production method of titanium focus ring |
| CN104668910A (en) * | 2015-02-06 | 2015-06-03 | 西安交通大学 | Strain induced type bending and semi-solid die forging compounding technology for large-sized ring piece |
| CN104668910B (en) * | 2015-02-06 | 2016-08-24 | 西安交通大学 | The strain-induced formula of large ring twists and semisolid die forging combination process |
| CN106475728B (en) * | 2015-08-24 | 2018-05-18 | 宁波江丰电子材料股份有限公司 | A kind of repairing and reusing method of column handle on tantalum ring |
| CN106493525A (en) * | 2016-12-23 | 2017-03-15 | 有研亿金新材料有限公司 | A kind of preparation method of sputtering titanacycle |
| CN106884142A (en) * | 2017-03-14 | 2017-06-23 | 郭和谦 | A kind of preparation method of high-quality TiAlN thin film |
| CN108396297A (en) * | 2018-06-01 | 2018-08-14 | 宁波江丰电子材料股份有限公司 | Sputter ring |
| CN110670031A (en) * | 2019-10-21 | 2020-01-10 | 宁波江丰电子材料股份有限公司 | Tantalum ring, preparation method thereof, sputtering device containing tantalum ring and application of sputtering device |
| CN110904415A (en) * | 2019-11-28 | 2020-03-24 | 宁波江丰电子材料股份有限公司 | Anti-loosening Ta ring and design method thereof |
| CN110904415B (en) * | 2019-11-28 | 2021-06-25 | 宁波江丰电子材料股份有限公司 | Anti-loosening Ta ring and design method thereof |
| CN111469052A (en) * | 2020-04-03 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of ring piece |
| CN111575663A (en) * | 2020-05-15 | 2020-08-25 | 宁波江丰电子材料股份有限公司 | Magnetron sputtering ring piece and machining method of matching hole of magnetron sputtering ring piece |
| CN112475788A (en) * | 2020-10-27 | 2021-03-12 | 有研亿金新材料有限公司 | Method for manufacturing copper focusing ring |
| CN112522502A (en) * | 2020-11-11 | 2021-03-19 | 宁波江丰电子材料股份有限公司 | Treatment method for prolonging service life of ring piece |
| CN112958997A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for repairing and recycling 80TPI tantalum ring piece |
| CN115319399A (en) * | 2022-08-26 | 2022-11-11 | 宁波江丰电子材料股份有限公司 | Method for repairing semiconductor sputtering tantalum ring |
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