CN115319399A - Method for repairing semiconductor sputtering tantalum ring - Google Patents
Method for repairing semiconductor sputtering tantalum ring Download PDFInfo
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- CN115319399A CN115319399A CN202211035566.9A CN202211035566A CN115319399A CN 115319399 A CN115319399 A CN 115319399A CN 202211035566 A CN202211035566 A CN 202211035566A CN 115319399 A CN115319399 A CN 115319399A
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- acid washing
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000004544 sputter deposition Methods 0.000 title abstract description 44
- 239000002253 acid Substances 0.000 claims abstract description 60
- 238000005406 washing Methods 0.000 claims abstract description 36
- 238000007514 turning Methods 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000007788 roughening Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims description 33
- 238000005498 polishing Methods 0.000 claims description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 238000002791 soaking Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 238000007517 polishing process Methods 0.000 claims description 4
- 244000137852 Petrea volubilis Species 0.000 claims description 2
- 230000001464 adherent effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000243 solution Substances 0.000 description 19
- 238000003466 welding Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 239000011259 mixed solution Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005554 pickling Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P6/00—Restoring or reconditioning objects
Abstract
The invention provides a method for repairing a semiconductor sputtering tantalum ring, which comprises the following steps: the method comprises the following steps that (I) convex knots distributed on the outer wall of a ring body are separated from the surface of the ring body to obtain a first ring body, and a reserved groove is formed in the surface of the first ring body; (II) carrying out acid washing on the first ring body to remove attachments on the surface; (III) turning the inner ring surface, the outer ring surface and an angle R of the first ring body, and removing residual substances on the surfaces; (IV) filling a gasket in the reserved groove to obtain a second ring body, and roughening the second ring body; (V) taking out the gasket, and fixing the convex structures in the reserved grooves respectively to finish repair. The method realizes the reutilization of the sputtering tantalum ring and greatly reduces the manufacturing cost of the semiconductor sputtering tantalum ring.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, relates to a sputtering tantalum ring, and particularly relates to a method for repairing a semiconductor sputtering tantalum ring.
Background
During the Physical Vapor Deposition (PVD) process of a semiconductor, a sputtering tantalum ring is required to be arranged to constrain the motion trajectory of sputtering ions. In the coating process, because charged particles bombard the target material, the surface of the sputtered tantalum ring is easy to deposit metal, alloy or dielectric film, and the sputtered tantalum ring has the risk of falling off along with the increase of attachments. In order to ensure the sputtering effect, the sputtering tantalum ring should be replaced completely, and the used sputtering tantalum ring is generally discarded.
After the existing partial sputtering tantalum ring is used, the actual thickness of the existing partial sputtering tantalum ring can still meet the sputtering requirement, if the existing partial sputtering tantalum ring is scrapped and treated, the replacement frequency is high, the resource waste is caused, and the manufacturing cost is increased. Therefore, it is very important to provide a method for repairing a sputtering target so as to satisfy the recycling requirement and to reduce the manufacturing cost.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a method for repairing a semiconductor sputtering tantalum ring, which is characterized in that a convex knot body welded on the outer side of a ring body is removed from the ring body to obtain a ring only with the ring body, attachments attached to the surface of the ring body are removed, knurling is carried out again, and the convex knot body is welded again, so that the reutilization of the sputtering tantalum ring is realized, and the manufacturing cost of the semiconductor sputtering tantalum ring is greatly reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for repairing a semiconductor sputtering tantalum ring, which comprises the following steps:
the method comprises the following steps that (I) convex knots distributed on the outer wall of a ring body are separated from the surface of the ring body to obtain a first ring body, and a reserved groove is formed in the surface of the first ring body;
(II) carrying out acid washing on the first ring body to remove attachments on the surface;
(III) turning the inner ring surface, the outer ring surface and an R angle of the first ring body, and removing residual substances on the surfaces;
(IV) filling a gasket in the reserved groove to obtain a second ring body, and roughening the second ring body;
(V) taking out the gasket, and fixing the convex knots in the reserved grooves respectively to finish the repair.
It should be noted that the semiconductor sputtering tantalum ring in the present invention includes a ring body with an annular structure, and a plurality of protruding nodes are uniformly distributed along the outer wall of the ring body, and in the manufacturing process of the semiconductor sputtering tantalum ring, a plurality of preformed grooves are formed on the outer wall surface of the ring body, and then the protruding nodes are fixed in the preformed grooves respectively. Therefore, when the semiconductor sputtering tantalum ring is repaired, the reserved groove on the surface of the ring body is exposed after the convex junction is removed.
In a preferred embodiment of the present invention, in step (i), the separation comprises: and cutting the convex knot body on the outer wall of the ring body by using a cutting device, and cutting off the connecting part of the convex knot body and the ring body to form the preformed groove to obtain the first ring body.
It should be noted that the connecting portion described in the present invention is a connecting portion formed in the welding and fixing process of the protruding knot body and the ring body.
In a preferred embodiment of the present invention, in step (ii), the acid washing comprises: and soaking the first ring body by using an acid solution.
Preferably, the acid solution comprises HF, HCl and water, the volume ratio of HF, HCl and water is 1 (2-5): 1-3, and can be, for example, 1.
Preferably, in step (II), the acid washing time is 3 to 8min, such as 3.0min, 3.5min, 4.0min, 4.5min, 5.0min, 6.0min, 6.5min, 7.0min, 7.5min or 8.0min, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
In the process of PVD coating of a semiconductor, attachments are easy to deposit on the surfaces of the ring body and the convex junction body, in order to ensure subsequent recycling, mixed acid of HF, HCl and water is used as cleaning liquid, surface cleaning is carried out through acid cleaning, the attachments are removed, and the use requirement of the sputtering tantalum ring is met.
As a preferred embodiment of the present invention, the repairing method further includes: and after the turning and before the filling of the gasket, polishing the inner ring surface, the outer ring surface and the R angle of the first ring body.
Preferably, the polishing process comprises: and adopting sand paper to rub and remove the inner ring surface, the outer ring surface and the R angle of the first ring body.
As a preferred embodiment of the present invention, after the polishing process, the thickness loss rate of the ring body is 1 to 6%, for example, 1.0%, 1.5%, 2.0%, 2.5%, 3.0%, 3.5%, 4.0%, 4.5%, 5.0%, 5.5%, or 6.0%, but is not limited to the recited values, and other values not recited in the range of the values are also applicable.
In the present invention, the thickness loss rate = (thickness of original ring body-thickness of first ring body after polishing treatment)/thickness of original ring body. The invention controls the thickness loss rate in a lower range, so that the thickness of the repaired ring body is close to that of the original ring body, and the quality deterioration caused by thickness loss is avoided.
As a preferable technical scheme of the invention, in the step (iv), the gasket is of an arc-shaped structure, and the gasket is matched with the structure of the preformed groove.
Preferably, the gasket is made of the same material as the ring body.
As a preferable aspect of the present invention, in the step (iv), the roughening treatment includes: and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel.
Preferably, the roughness of the surface of the second ring body is 12 to 45 μm, and may be, for example, 12 μm, 15 μm, 18 μm, 20 μm, 25 μm, 28 μm, 30 μm, 35 μm, 38 μm, 40 μm or 45 μm, but is not limited to the values listed, and other values not listed in this range of values are also applicable.
It should be noted that after the ring body is sequentially subjected to acid washing, turning and polishing, the patterns on the inner ring surface, the outer ring surface and the R-angle are removed, in order to achieve the original product state, knurling treatment should be performed again, and the roughness of the finally formed pattern needs to achieve the roughness of the knurls of the sputtering tantalum ring and the pressure drop of the knurls of the original sputtering tantalum ring.
The preformed groove on the surface of the first ring body is not beneficial to subsequent knurling operation, so that the gasket with the structure matched with the profile of the preformed groove is adopted, the preformed groove is fixedly filled by welding, the outer wall of the second ring body filled with the gasket is smooth, uniform knurling patterns are formed, and the quality of a repaired product is improved.
In a preferred embodiment of the present invention, in the step (v), the fixing is performed by welding.
As a preferred embodiment of the present invention, in the step (v), before fixing the convex structure, the convex structure is sequentially subjected to acid washing and polishing to remove the attachments on the surface of the convex structure.
In the present invention, the same acid pickling process is performed on the protruding knot body as on the ring body, and the protruding knot body is soaked in the same acid solution to remove the deposit on the surface of the protruding knot body.
As a preferred technical solution of the present invention, the repairing method specifically includes the steps of:
(1) Cutting the convex knot body on the outer wall of the ring body by using a cutting device, and cutting off the connecting part of the convex knot body and the ring body to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body in an acid solution for acid washing to remove attachments on the surface of the first ring body, wherein the acid washing time is 3-8 min;
(3) Turning the inner ring surface, the outer ring surface and the R angle of the first ring body, removing residual substances on the surfaces, and polishing by adopting abrasive paper;
(4) Filling a gasket in the preformed groove of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel;
(5) Carrying out acid washing and polishing treatment on the convex knot body in the step (1) in sequence to remove attachments on the surface of the convex knot body;
(6) And (4) taking out the gasket of the second ring body, and respectively fixing the convex knots in the step (5) in the preformed groove to finish repairing.
The numerical ranges set forth herein include not only the recited values but also any values between the recited numerical ranges not enumerated herein, and are not intended to be exhaustive or otherwise clear from the intended disclosure of the invention in view of brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
according to the method for repairing the semiconductor sputtering tantalum ring, the convex knot body welded on the outer side of the ring body is removed from the ring body to obtain the ring only with the ring body, the gasket is used for filling the reserved groove, knurling is carried out again, and the convex knot body is welded again, so that the sputtering tantalum ring is reused, the manufacturing cost of the semiconductor sputtering tantalum ring is greatly reduced, the repairing method is easy to operate, the quality of a repaired product is improved, and the use requirement of the original sputtering tantalum ring can be met.
Drawings
FIG. 1 is a flow chart of a method for repairing a semiconductor sputtered tantalum ring according to an embodiment of the invention;
FIG. 2 is a schematic diagram illustrating the structure of a sputtered tantalum ring according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a gasket according to an embodiment of the present invention.
Wherein, 1-ring body; 2-a bulge; 3-reserving a groove; 4-a gasket.
Detailed Description
It is to be understood that in the description of the present invention, the terms "central," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in an orientation or positional relationship indicated in the drawings for convenience in describing the present invention and to simplify the description, but are not intended to indicate or imply that the device or element so referred to must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner and therefore are not to be construed as limiting the invention. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
It should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
In one embodiment, the present invention provides a method for repairing a semiconductor sputtered tantalum ring, as shown in fig. 1, the method specifically includes the following steps:
(1) Cutting and taking out the convex knot body 2 on the outer wall of the ring body 1 shown in fig. 2 by using a cutting device, and cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing to remove attachments on the surface of the first ring body, wherein the acid washing time is 3-8 min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, the HCl and the water is 1 (2-5) to 1-3;
(3) Turning the inner ring surface, the outer ring surface and the R angle of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) As shown in fig. 3, a gasket 4 is filled in the preformed groove 3 of the first ring body to obtain a second ring body, and knurling wheels are adopted to form patterns on the inner ring surface, the outer ring surface and the R corners of the second ring body, so that the roughness of the surface of the second ring body is 12-45 μm, the gasket 4 is of an arc structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the preformed groove 3 to finish repairing.
Example 1
The embodiment provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting and taking out the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing, and removing attachments on the surface of the first ring body, wherein the acid washing time is 5min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, HCl and water is 1;
(3) Turning the inner ring surface, the outer ring surface and an R angle of the first ring body, removing residual substances on the surfaces, and polishing by adopting abrasive paper;
(4) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel to ensure that the roughness of the surface of the second ring body is 25 mu m, wherein the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the reserved grooves 3 to finish the repair.
Example 2
The embodiment provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting and taking out the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing to remove attachments on the surface of the first ring body, wherein the acid washing time is 3min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, the HCl and the water is 1;
(3) Turning the inner ring surface, the outer ring surface and an angle R of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel to ensure that the roughness of the surface of the second ring body is 15 mu m, wherein the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the preformed groove 3 to finish the repair.
Example 3
The embodiment provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting and taking out the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing, and removing attachments on the surface of the first ring body, wherein the acid washing time is 4min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, the HCl and the water is 1;
(3) Turning the inner ring surface, the outer ring surface and an angle R of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns at the corners of the inner ring surface, the outer ring surface and R of the second ring body by adopting a knurling wheel to ensure that the roughness of the surface of the second ring body is 20 mu m, wherein the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the preformed groove 3 to finish the repair.
Example 4
The embodiment provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting and taking out the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing to remove attachments on the surface of the first ring body, wherein the acid washing time is 6min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, HCl and water is 1;
(3) Turning the inner ring surface, the outer ring surface and an angle R of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel to ensure that the roughness of the surface of the second ring body is 35 mu m, wherein the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the preformed groove 3 to finish the repair.
Example 5
The embodiment provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and then cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body by using an acid solution for acid washing, and removing attachments on the surface of the first ring body, wherein the acid washing time is 8min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of the HF, the HCl and the water is 1;
(3) Turning the inner ring surface, the outer ring surface and an angle R of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns at the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel, so that the roughness of the surface of the second ring body is 45 mu m, the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(5) Carrying out acid washing and polishing treatment on the convex knot body 2 in the step (1) in sequence to remove attachments on the surface of the convex knot body 2;
(6) And (4) taking out the gasket 4 of the second ring body, and respectively welding the convex knots 2 in the step (5) in the preformed groove 3 to finish the repair.
Comparative example 1
The comparative example provides a method for repairing a semiconductor sputtering tantalum ring, which is different from the method in example 1 in that: the step (4) is not provided with the gasket 4, knurling treatment is directly carried out, and other process parameters and operating conditions are completely the same as those of the embodiment 1.
Comparative example 2
The comparative example provides a method for repairing a semiconductor sputtering tantalum ring, which specifically comprises the following steps:
(1) Cutting the convex knot body 2 on the outer wall of the ring body 1 by using a cutting device, and then cutting off a connecting part of the convex knot body 2 and the ring body 1 to form a reserved groove to obtain a first ring body;
(2) Turning the inner ring surface, the outer ring surface and an angle R of the first ring body, removing attachments on the surfaces, and polishing by using abrasive paper;
(3) Filling a gasket 4 in the preformed groove 3 of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel, so that the roughness of the surface of the second ring body is 25 mu m, the gasket 4 is of an arc-shaped structure and is matched with the structure of the preformed groove 3, and the material of the gasket 4 is the same as that of the ring body 1;
(4) Soaking the second ring body with the patterns formed in the step (3) and the convex joint body 2 in the step (1) in an acid solution for pickling to remove attachments on the surface, wherein the pickling time is 5min, the acid solution is a mixed solution of HF, HCl and water, and the volume ratio of HF, HCl and water is 1;
(5) And taking out the gasket 4 of the second ring body, and respectively welding the convex bodies 2 in the preformed grooves 3 to finish the repair.
Under the same conditions, the PVD coating is respectively carried out on the same type of tantalum target by adopting the original ring piece body 1, the unrepaired sputtered tantalum ring and the repaired sputtered tantalum ring in the examples 1-5, the comparative examples 1 and 2. The relative deviation (= [ (measured value-average value)/average value ] × 100%) of the coating uniformity of the original ring body 1, the unrepaired sputtered tantalum ring and the repaired sputtered tantalum ring was measured by a step profiler, and the results are shown in table 1.
The thicknesses of the original sputtered tantalum ring, the unrepaired sputtered tantalum ring and the repaired sputtered tantalum ring are respectively measured, the relative deviation is calculated, and the result is shown in the table 1:
TABLE 1
As can be seen from table 1, the sputtering tantalum ring repaired by the method provided in embodiments 1 to 5 has a small thickness loss, is controlled within a range of 1 to 6%, has a complete structure close to the original sputtering tantalum ring, effectively removes the attachments on the surface of the sputtering tantalum ring, has a plating uniformity substantially equal to that of the original sputtering tantalum ring, realizes the recycling of the sputtering tantalum ring, and thus greatly reduces the manufacturing cost of the semiconductor sputtering tantalum ring.
Compared with the embodiment 1, the roundness of the inner ring of the repaired ring body 1 in the comparative example 1 is increased, and the uniformity of the plated film is reduced, which is mainly caused by that in the comparative example 1, the preformed groove 3 on the surface of the ring body 1 is not filled in the roughening treatment process, resistance is generated at the preformed groove 3 after the knurling wheel rolls, the formation of patterns is not facilitated, the bottom surface of the preformed groove is easy to deform, the roundness of the inner ring is reduced, and the product quality is reduced.
Compared with example 1, the ring body 1 repaired in comparative example 2 has larger coating uniformity relative deviation. The reason is that the repairing mode provided by the comparative example 2 is a mode of removing the residual substances on the surface of the ring body 1 by roughening treatment and then acid washing, while the embodiment 1 is a mode of removing the attachments by acid washing and then removing the residual substances by turning before roughening treatment, so that the removal effect of the attachments is better, the ring body 1 is smooth, the uniform formation of patterns is facilitated, and the repaired ring body 1 can reach the level equal to that of the original sputtering tantalum ring.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention disclosed herein fall within the scope and disclosure of the present invention.
Claims (10)
1. A method for repairing a semiconductor sputtered tantalum ring is characterized by comprising the following steps:
the method comprises the following steps that (I) convex knots distributed on the outer wall of a ring body are separated from the surface of the ring body to obtain a first ring body, and a reserved groove is formed in the surface of the first ring body;
(II) carrying out acid washing on the first ring body to remove attachments on the surface;
(III) turning the inner ring surface, the outer ring surface and an angle R of the first ring body, and removing residual substances on the surfaces;
(IV) filling a gasket in the reserved groove to obtain a second ring body, and roughening the second ring body;
(V) taking out the gasket, and fixing the convex structures in the reserved grooves respectively to finish repair.
2. The method of repairing of claim 1, wherein in step (i), said separating comprises: and cutting the convex knot body on the outer wall of the ring body by using a cutting device, and cutting off the connecting part of the convex knot body and the ring body to form the preformed groove to obtain the first ring body.
3. The repair method according to claim 1 or 2, wherein in step (ii), the acid washing comprises: soaking the first ring body by using an acid solution;
preferably, the acid solution comprises HF, HCl and water, and the volume ratio of the HF to the HCl to the water is 1 (2-5) to (1-3);
preferably, in the step (II), the acid washing time is 3-8 min.
4. The repair method according to any one of claims 1 to 3, further comprising: after the turning and before the filling of the gasket, polishing the inner ring surface, the outer ring surface and the R angle of the first ring body;
preferably, the polishing process comprises: and adopting sand paper to rub and remove the inner ring surface, the outer ring surface and the R angle of the first ring body.
5. The repairing method according to claim 4, wherein a thickness loss rate of the ring body after the polishing process is 1 to 6%.
6. The repair method according to any one of claims 1 to 5, wherein in step (IV), the gasket has an arc-shaped structure, and the gasket is matched with the structure of the preformed groove;
preferably, the gasket is made of the same material as the ring body.
7. The repair method according to any one of claims 1 to 6, wherein in the step (IV), the roughening treatment comprises: forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel;
preferably, the roughness of the surface of the second ring body is 12 to 45 μm.
8. Repair method according to any one of claims 1-7, characterized in that in step (V) the fixation is a welded fixation.
9. The repairing method according to any one of claims 1 to 8, wherein in the step (V), before the convex structure is fixed, the convex structure is subjected to acid washing and polishing treatment in order to remove the adherent on the surface of the convex structure.
10. Repair method according to any one of claims 1 to 9, characterized in that it comprises in particular the steps of:
(1) Cutting the convex knot body on the outer wall of the ring body by using a cutting device, and then cutting off the connecting part of the convex knot body and the ring body to form a reserved groove to obtain a first ring body;
(2) Soaking the first ring body in an acid solution for acid washing to remove attachments on the surface of the first ring body, wherein the acid washing time is 3-8 min;
(3) Turning the inner ring surface, the outer ring surface and the R angle of the first ring body, removing residual substances on the surfaces, and polishing by using abrasive paper;
(4) Filling a gasket in the preformed groove of the first ring body to obtain a second ring body, and forming patterns on the inner ring surface, the outer ring surface and the R angle of the second ring body by adopting a knurling wheel;
(5) Carrying out acid washing and polishing treatment on the convex knot body in the step (1) in sequence to remove attachments on the surface of the convex knot body;
(6) And (4) taking out the gasket of the second ring body, and respectively fixing the convex knots in the step (5) in the preformed groove to finish repairing.
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| CN202211035566.9A CN115319399A (en) | 2022-08-26 | 2022-08-26 | Method for repairing semiconductor sputtering tantalum ring |
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| CN202211035566.9A CN115319399A (en) | 2022-08-26 | 2022-08-26 | Method for repairing semiconductor sputtering tantalum ring |
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| CN106475728A (en) * | 2015-08-24 | 2017-03-08 | 宁波江丰电子材料股份有限公司 | A kind of repairing and reusing method of column handle on tantalum ring |
| CN112958997A (en) * | 2021-02-18 | 2021-06-15 | 宁波江丰电子材料股份有限公司 | Method for repairing and recycling 80TPI tantalum ring piece |
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| WO2005077677A1 (en) * | 2004-02-09 | 2005-08-25 | Honeywell International, Inc. | Physical vapor deposition components, and methods of treating components |
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