CN101916985B - Monitoring method of IGBT collector overvoltage double protection - Google Patents
Monitoring method of IGBT collector overvoltage double protection Download PDFInfo
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- CN101916985B CN101916985B CN 201010231980 CN201010231980A CN101916985B CN 101916985 B CN101916985 B CN 101916985B CN 201010231980 CN201010231980 CN 201010231980 CN 201010231980 A CN201010231980 A CN 201010231980A CN 101916985 B CN101916985 B CN 101916985B
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- 238000012544 monitoring process Methods 0.000 title abstract description 4
- 102100024061 Integrator complex subunit 1 Human genes 0.000 claims abstract description 12
- 102100028043 Fibroblast growth factor 3 Human genes 0.000 claims abstract description 11
- 101100464782 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CMP2 gene Proteins 0.000 claims abstract description 10
- 101710092857 Integrator complex subunit 1 Proteins 0.000 claims description 11
- 108050002021 Integrator complex subunit 2 Proteins 0.000 claims description 10
- 101100464779 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CNA1 gene Proteins 0.000 abstract 3
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- 238000010438 heat treatment Methods 0.000 description 1
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Abstract
The invention relates to a monitoring method of IGBT collector overvoltage double protection. An IGBT collector overvoltage double protection circuit, which comprises an IGBT, a microcontroller, an IGBT driving circuit, a resistor R1 and a resistor R2. An output end of the IGBT driving circuit is connected to a grid G of the IGBT. The collector C of the IGBT is connected to an input end of the microcontroller after voltage divider of the tandem voltage divider resistors R1 and R2. The output end of the microcontroller is connected to the input end of the IGBT driving circuit. The microcontroller comprises comparators CMP1 and CMP2, a first IGBT control circuit and a second IGBT control circuit, negative input ends of the comparators CMP1 and CMP2 are respectively connected with reference voltages, and output ends are respectively connected with the first IGBT control circuit and the second IGBT control circuit, wherein when the comparator CMP1 outputs a high electrical level, the microcontroller generates an interrupt handling program INT1 by the handling of the first IGBT control circuit; and when the comparator CMP2 outputs a high electrical level, the IGBT is turned off by the handling of the second IGBT control circuit, and the microcontroller generates an interrupt handling program INT2. By adopting the method, the IGBT collector voltage can be monitored in real time.
Description
Technical field
The present invention is a kind of method for supervising of IGBT collector overvoltage double protection; particularly a kind ofly IGBT is protected, prevents the guard method that the IGBT overvoltage damages when surpassing its rated operational voltage for electromagnetic oven power control device IGBT collector voltage, belong to the innovative technology of electromagnetic oven power control device IGBT protection method for supervising.
Background technology
Electromagnetic oven power control device insulated gate bipolar transistor (being called for short IGBT) all is provided with overvoltage crowbar at present; this protective circuit reduces IGBT service time automatically when detecting IGBT collector electrode C overvoltage; but IGBT service time can not reduce too much; otherwise the electromagnetic oven power fluctuation is too big; so for electromagnetic oven power is stablized; the value that IGBT service time reduces is less relatively; but when line voltage has than great fluctuation process; the situation that still can occur IGBT collector electrode C overtension after IGBT service time reduces; even also high before reducing than the service time, when the IGBT overvoltage will occurring behind the certain value, IGBT collector electrode C voltage height damages problem.
Summary of the invention
The objective of the invention is to consider the problems referred to above and a kind of real-time monitoring that can realize the IGBT collector voltage is provided; can effectively solve technical problem untimely to the IGBT overvoltage protection in the prior art, that cause IGBT to damage, the method for supervising of the IGBT collector overvoltage double protection of the safety and reliability of raising electromagnetic oven complete machine.
Technical scheme of the present invention is: the method for supervising of IGBT collector overvoltage double protection of the present invention, wherein IGBT collector overvoltage double protection circuit comprises IGBT, microcontroller, the IGBT drive circuit, resistance R 1 and resistance R 2, the output of IGBT drive circuit is connected with the grid G of IGBT, be connected the microcontroller input after divider resistance R1 and resistance R 2 dividing potential drops of the collector electrode C of IGBT by series connection, the microcontroller output is connected with IGBT drive circuit input, microcontroller comprises comparator C MP1 and CMP2, the one IGBT control circuit and the 2nd IGBT control circuit, the negative input end of comparator C MP1 and CMP2 is connected reference voltage Vref 1 and Vref2 respectively, output connects an IGBT control circuit and the 2nd IGBT control circuit respectively, during comparator C MP1 output high level, by the processing of an IGBT control circuit, microcontroller produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit, IGBT turn-offed, and microcontroller produces interrupt handling routine INT2; Whenever enter interrupt handling routine INT1 one time, the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton; Whenever enter interrupt handling routine INT2 one time, IGBT is turn-offed always, have up to microcontroller inside one restart signal IGBT could be open-minded again.
The size of above-mentioned reference voltage Vref 1 and Vref2 is selected by the inner related register of microcontroller, and Vref1＞Vref2.
The present invention compared with prior art; have following beneficial effect: microcontroller of the present invention passes through the unusual detection of IGBT C pole tension; reduce IGBT service time timely or directly turn-off IGBT and guarantee that power device IGBT is operated in normal condition; by the real-time monitoring to electromagnetic oven IGBT C pole tension; effectively solve technical problem untimely to the IGBT overvoltage protection in the prior art, that cause IGBT to damage, improve the safety and reliability of electromagnetic oven complete machine.The present invention is that a kind of design is ingenious, function admirable, the method for supervising of convenient and practical IGBT C utmost point overvoltage double protection.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is the INT1 interrupt handling routine flow chart of the embodiment of the invention.
Fig. 3 is the INT2 interrupt handling routine flow chart of the embodiment of the invention.
Embodiment
Embodiment:
Circuit theory diagrams of the present invention as shown in Figure 1, include IGBT current collection extreme pressure dual-protection circuit, IGBT current collection extreme pressure dual-protection circuit comprises IGBT, microcontroller 1, IGBT drive circuit 2, resistance R 1, resistance R 2, the output of IGBT drive circuit 2 is connected with the grid G of IGBT, the collector electrode C of IGBT is by the divider resistance R1 of series connection, connect microcontroller 1 input after resistance R 2 dividing potential drops, microcontroller 1 output is connected with IGBT drive circuit 2 inputs, microcontroller 1 comprises comparator C MP1 and CMP2, the one IGBT control circuit 11 and the 2nd IGBT control circuit 12, comparator C MP1, the negative input end of CMP2 connects reference voltage Vref 1 and Vref2 respectively, output connects an IGBT control circuit 11 and the 2nd IGBT control circuit 12 respectively, during comparator C MP1 output high level, by the processing of an IGBT control circuit 11, microcontroller 1 produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit 12, IGBT turn-offed, and microcontroller 1 produces interrupt handling routine INT2.
The size of above-mentioned reference voltage Vref 1 and Vref2 is selected by microcontroller 1 inner related register, and Vref1＞Vref2.
Whenever enter interrupt routine INT1 one time, the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton.
In the present embodiment, whenever enter interrupt routine INT2 one time, IGBT is turn-offed always, have up to microcontroller 1 inside one restart signal IGBT could be open-minded again.
In the present embodiment, IGBT drive circuit 2 is prior art circuits, does not repeat them here.
The one IGBT control circuit 11, the 2nd IGBT control circuit 12 belong to the modular circuit among the integrated heating chip MH2C33P of Sanyo.
Reference voltage Vref 1 and Vref2 size can be selected by microcontroller 1 inner related register, and Vref1＞Vref2;
If IGBT collector electrode C voltage is Vc, IGBT C utmost point rated voltage is Vo.
Vc satisfies condition when IGBT collector electrode C voltage: when Vc*R2/ (R1+R2)＞Vref1 and Vo-Vc＜Vo*10%, comparator C MP1 makes microcontroller produce interrupt handling routine INT1 to an IGBT control circuit 11 output high level signals.
MP2 satisfies condition when comparator C: Vc*R2/ (R1+R2)＞Vref2, and during Vc ≈ Vo, CMP2 directly turn-offs IGBT, and makes microcontroller 1 produce interrupt handling routine INT2 to the 2nd IGBT control circuit 12 output high level signals.
Operation principle of the present invention is as follows:
As shown in Figure 2, whenever enter interrupt handling routine INT1 one time, the specified register of microcontroller 1 (program pointer and general register A, B etc.) stacked, by the adjustment to IGBT driving pulse width register PPG value, current PPG subtracts 1 or subtract 2, make the next service time Ton of IGBT reduce time Δ T, and Δ T＜Ton, guarantee corresponding the reducing of collector electrode C voltage of IGBT IGBT in next switch periods, last specified register is popped, withdraw from the INT1 interrupt handling routine, just in the interrupt routine of INT1, finish the suitable adjustment to IGBT driving pulse width.
As shown in Figure 3, whenever enter interrupt handling routine INT2 one time, the specified register of microcontroller is stacked, by software turn-off time of IGBT is set, the turn-off time finishes the back microcontroller and restarts IGBT, and last specified register is popped, withdraw from interrupt handling routine, the INT2 interrupt handling routine guarantees that its safety is guaranteed in the IGBT break-off when voltage ripple of power network is big.
Claims (2)
1. the method for supervising of an IGBT collector overvoltage double protection, wherein IGBT collector overvoltage double protection circuit comprises IGBT, microcontroller (1), IGBT drive circuit (2), resistance R 1 and resistance R 2, the output of IGBT drive circuit (2) is connected with the grid G of IGBT, be connected microcontroller (1) input after divider resistance R1 and resistance R 2 dividing potential drops of the collector electrode C of IGBT by series connection, microcontroller (1) output is connected with IGBT drive circuit (2) input, microcontroller (1) comprises comparator C MP1 and CMP2, the one IGBT control circuit (11) and the 2nd IGBT control circuit (12), the negative input end of comparator C MP1 and CMP2 is connected reference voltage Vref 1 and Vref2 respectively, output connects an IGBT control circuit (11) and the 2nd IGBT control circuit (12) respectively, when it is characterized in that comparator C MP1 output high level, by the processing of an IGBT control circuit (11), microcontroller (1) produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit (12), IGBT turn-offed, and microcontroller (1) produces interrupt handling routine INT2; Whenever enter interrupt handling routine INT1 one time, the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton; Whenever enter interrupt handling routine INT2 one time, IGBT is turn-offed always, have up to microcontroller (1) inside one restart signal IGBT could be open-minded again.
2. the method for supervising of IGBT collector overvoltage double protection according to claim 1 is characterized in that the size of above-mentioned reference voltage Vref 1 and Vref2 is selected by the inner related register of microcontroller (1), and Vref1＞Vref2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231980 CN101916985B (en) | 2010-07-20 | 2010-07-20 | Monitoring method of IGBT collector overvoltage double protection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231980 CN101916985B (en) | 2010-07-20 | 2010-07-20 | Monitoring method of IGBT collector overvoltage double protection |
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| Publication Number | Publication Date |
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| CN101916985A CN101916985A (en) | 2010-12-15 |
| CN101916985B true CN101916985B (en) | 2013-10-09 |
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| CN 201010231980 Expired - Fee Related CN101916985B (en) | 2010-07-20 | 2010-07-20 | Monitoring method of IGBT collector overvoltage double protection |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8670219B2 (en) * | 2011-06-16 | 2014-03-11 | Monolithic Power Systems, Inc. | High-voltage devices with integrated over-voltage protection and associated methods |
| CN102252355A (en) * | 2011-08-05 | 2011-11-23 | 美的集团有限公司 | Control method for continuous low-power heating of induction cooker |
| CN103108427B (en) * | 2011-11-14 | 2015-05-13 | 深圳市长运通光电技术有限公司 | Light emitting diode (LED) drive chip, LED lamp and high voltage monitoring protection circuit |
| CN102548073B (en) * | 2011-12-31 | 2014-12-10 | 美的集团股份有限公司 | IGBT (Insulated Gate Bipolar Transistor) drive circuit of electromagnetic induction heating equipment |
| CN104244481B (en) * | 2013-06-14 | 2016-02-10 | 美的集团股份有限公司 | The method for heating and controlling of electromagnetic induction heater and electromagnetic induction heater |
| CN104237691A (en) * | 2014-09-19 | 2014-12-24 | 四川长虹电器股份有限公司 | Debugging method of frequency converter |
| US9331474B1 (en) * | 2014-10-08 | 2016-05-03 | Stmicroelectronics International N.V. | Over-voltage protection circuit for a drive transistor |
| CN108718074A (en) * | 2018-07-06 | 2018-10-30 | 青岛海信电器股份有限公司 | A kind of overvoltage crowbar and terminal installation |
| CN112291875B (en) * | 2020-11-06 | 2022-09-16 | 广东瑞德智能科技股份有限公司 | Back pressure protection method and device for induction cooker and induction cooker |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178498Y (en) * | 2008-04-03 | 2009-01-07 | 深圳和而泰智能控制股份有限公司 | Surge protection circuit for electromagentic furnace |
| CN101552464A (en) * | 2009-04-22 | 2009-10-07 | 九阳股份有限公司 | IGBT over-voltage protection method and over-voltage protection circuit adopting method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4223331B2 (en) * | 2003-06-13 | 2009-02-12 | 株式会社日立製作所 | Protection device for power control semiconductor element and power conversion device including the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178498Y (en) * | 2008-04-03 | 2009-01-07 | 深圳和而泰智能控制股份有限公司 | Surge protection circuit for electromagentic furnace |
| CN101552464A (en) * | 2009-04-22 | 2009-10-07 | 九阳股份有限公司 | IGBT over-voltage protection method and over-voltage protection circuit adopting method |
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| CN101916985A (en) | 2010-12-15 |
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