A kind of IGBT drive circuit of electromagnetic induction heating device
Technical field
The present invention relates to a kind of IGBT drive circuit of electromagnetic induction heating device, particularly a kind ofly can protect IGBT to drive signal, make IGBT drive signal that the IGBT drive circuit of the electromagnetic induction heating device that IGBT is not damaged occurs to protect when abnormal.
Background technology
The IGBT of electromagnetic induction heating device drives signal generally by single-chip microcomputer, to be sent, and directly drives IGBT work after amplifying circuit.Because electromagnetic induction heating is a kind of induction heating of complexity, in heating process, circuit can produce complicated electromagnetic interference, being disturbed rear IGBT drives signal to tend to occur abnormal, IGBT is not subject to Single-chip Controlling after driving width to send, occur when width surpasses design maximum that often emergent power is abnormal, thereby damage IGBT.Traditional electromagnetic induction heating protective circuit for example overvoltage protection, overcurrent protection, surge protection etc. is all the protection for the whole operating state of electromagnetic induction heating device; IGBT drives the signal width that is interfered to occur when abnormal, and above-described protective circuit generally can not play a protective role.
Summary of the invention
The object of the invention is to consider the problems referred to above and provide a kind of design ingenious, the IGBT drive circuit of the electromagnetic induction heating device that reliability is high.The present invention can avoid electromagnetic induction heating device internal circuit to be subject under unpredictable disturbed condition, and IGBT drives the deration of signal extremely to cause IGBT to damage.
In order to realize above-mentioned technical purpose; the present invention program is: the IGBT drive circuit of electromagnetic induction heating device of the present invention; comprise that IGBT drives signal generating circuit and IGBT to drive signal amplification circuit; wherein between IGBT driving signal generating circuit and IGBT driving signal amplification circuit, be also provided with IGBT and drive signal protection circuit; IGBT drives the output of signal generating circuit to drive the input of signal protection circuit to be connected with IGBT, and IGBT drives the output of signal protection circuit to drive the input of signal amplification circuit to be connected with IGBT.
Described IGBT drives signal protection circuit to comprise signal processing module and deration of signal limiting module, and wherein the output signal of signal processing module is the input signal of deration of signal limiting module.
Described signal processing module comprises resistance R 1, R2, R3 and R4; Capacitor C 1 and C2 and comparator U1, one end of resistance R 1 drives the output of signal generating circuit to be connected with IGBT, and the other end of resistance R 1 is connected with the positive input terminal of comparator U1; One end of resistance R 2 is connected with the positive input terminal of comparator U1, the other end ground connection of resistance R 2; One end of capacitor C 1 is connected with the positive input terminal of comparator U1, the other end ground connection of capacitor C 1; One end of resistance R 3 is connected with power supply VCC, and the other end of resistance R 3 is connected with the negative input end of comparator U1; One end of resistance R 4 is connected with the negative input end of comparator U1, the other end ground connection of resistance R 4; One end of capacitor C 2 is connected with the negative input end of comparator U1, the other end ground connection of capacitor C 2.
Described deration of signal limiting module comprises resistance R 5, R6, R7, R8, capacitor C 3, C4, and diode D1 and comparator U2, one end of resistance R 5 is connected with power supply VCC, and the other end of resistance R 5 is connected with the positive input terminal of comparator U2; One end of resistance R 6 is connected with the positive input terminal of comparator U2, the other end ground connection of resistance R 6; One end of capacitor C 3 is connected with the positive input terminal of comparator U2, the other end ground connection of capacitor C 3; One end of resistance R 7 is connected with power supply VCC, and the other end of resistance R 7 is connected with the negative input end of comparator U2; One end of capacitor C 4 is connected with the negative input end of comparator U2, the other end ground connection of capacitor C 4; The positive pole of diode D1 is connected with the positive input terminal of comparator U2, and the negative pole of diode D1 is connected with the negative input end of comparator U2; The output of comparator U2 is connected with resistance R 8.
Described IGBT signal amplification circuit is push-pull type amplifying circuit.
Described IGBT drives the built-in circuit that signal generating circuit is single-chip microcomputer.
The present invention drives signal generating circuit and IGBT to drive the structure that is also provided with IGBT driving signal protection circuit between signal amplification circuit owing to adopting at IGBT; IGBT signal generating circuit drives signal to be input to IGBT IGBT and drives signal protection circuit, and IGBT drives the output signal of signal protection circuit to be input to IGBT signal amplification circuit.When being subject to external interference, the IGBT of IGBT signal generating circuit output drives signal uncontrolled, and while driving the deration of signal to surpass designing requirement, IGBT protective circuit shields, and IGBT is not damaged in protection.Prevent that thereby the situation that the IGBT being sent by IGBT driving signal generating circuit drives signal to be subject to driving width to surpass restriction damage electromagnetic induction heating device in the situation of extraneous unpredictable interference from occurring.
Accompanying drawing explanation
Fig. 1 is circuit block diagram of the present invention;
Fig. 2 is circuit theory diagrams of the present invention;
Fig. 3, Fig. 4 are the waveform schematic diagram of the utility model drives signal various situations under normal condition;
In figure, A represents the waveform of the simple driving signal of IGBT of the normal output of MCU, and B represents the signal that A exports after signal processing module; C is that B exports IGBT secondary drive signal through width limiting module from resistance.
Fig. 5, Fig. 6 are the waveform schematic diagram of various situations under the utility model drives abnormal signal state;
In figure, D represents that abnormal waveform occurs the simple driving signal of IGBT of MCU output, and its deration of signal surpasses design load, and E represents the waveform producing after signal that D exports after signal processing module charges to the electric capacity in width limiting module.F represents the waveform that power supply VCC in width limiting module produces after to capacitor charging by resistance.When E signal amplitude is less than F signal amplitude, comparator upset, output low level, output signal is as shown in G.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the embodiment of this invention is described further.
As shown in Figure 1; the IGBT drive circuit of electromagnetic induction heating device of the present invention; comprise that IGBT drives signal generating circuit 1 and IGBT to drive signal amplification circuit 3; wherein between IGBT driving signal generating circuit 1 and IGBT driving signal amplification circuit 3, be also provided with IGBT and drive signal protection circuit 2; IGBT drives the output of signal generating circuit 1 to drive the input of signal protection circuit 2 to be connected with IGBT, and IGBT drives the output of signal protection circuit 2 to drive the input of signal amplification circuit 3 to be connected with IGBT.
Described IGBT drives signal protection circuit 2 to comprise signal processing module 21 and deration of signal limiting module 22, and wherein the output signal of signal processing module 21 is the input signal of deration of signal limiting module 22.
Described signal processing module 21 comprises resistance R 1, R2, R3 and R4; Capacitor C 1 and C2 and comparator U1, one end of resistance R 1 drives the output of signal generating circuit (1) to be connected with IGBT, and the other end of resistance R 1 is connected with the positive input terminal of comparator U1; One end of resistance R 2 is connected with the positive input terminal of comparator U1, the other end ground connection of resistance R 2; One end of capacitor C 1 is connected with the positive input terminal of comparator U1, the other end ground connection of capacitor C 1; One end of resistance R 3 is connected with power supply VCC, and the other end of resistance R 3 is connected with the negative input end of comparator U1; One end of resistance R 4 is connected with the negative input end of comparator U1, the other end ground connection of resistance R 4; One end of capacitor C 2 is connected with the negative input end of comparator U1, the other end ground connection of capacitor C 2.
Described deration of signal limiting module 22 comprises resistance R 5, R6, R7, R8, capacitor C 3, C4, and diode D1 and comparator U2, one end of resistance R 5 is connected with power supply VCC, and the other end of resistance R 5 is connected with the positive input terminal of comparator U2; One end of resistance R 6 is connected with the positive input terminal of comparator U2, the other end ground connection of resistance R 6; One end of capacitor C 3 is connected with the positive input terminal of comparator U2, the other end ground connection of capacitor C 3; One end of resistance R 7 is connected with power supply VCC, and the other end of resistance R 7 is connected with the negative input end of comparator U2; One end of capacitor C 4 is connected with the negative input end of comparator U2, the other end ground connection of capacitor C 4; The positive pole of diode D1 is connected with the positive input terminal of comparator U2, and the negative pole of diode D1 is connected with the negative input end of comparator U2; The output of comparator U2 is connected with resistance R 8.
In the present embodiment, described IGBT drives the built-in circuit that signal generating circuit 1 is single-chip microcomputer.IGBT signal amplification circuit 3 is push-pull type amplifying circuit.IGBT signal generating circuit 1 drives signal to be input to IGBT IGBT and drives signal protection circuit 2, and IGBT drives the output signal of signal protection circuit 2 to be input to IGBT signal amplification circuit 3.When being subject to external interference, the IGBT of IGBT signal generating circuit 1 output drives signal uncontrolled, and while driving the deration of signal to surpass designing requirement, IGBT protective circuit 2 shields, and IGBT is not damaged in protection.
As shown in Figure 3,4, A represents the waveform of the simple driving signal of IGBT of the normal output of MCU, and B represents the signal that A exports after signal processing module 21; C is that B exports IGBT secondary drive signal through width limiting module 22 from resistance R 8.Under normal circumstances, A is consistent with the C deration of signal, and IGBT drives signal protection circuit 2 inoperative.
As shown in Figure 5,6, D represents that abnormal waveform occurs the simple driving signal of IGBT of MCU output, its deration of signal surpasses design load, E represent signal that D export after signal processing module 21 capacitor C 3 in width limiting module 22 is charged after the waveform of generation.F represents in width limiting module 22 that power supply VCC is by the rear waveform producing of 7 pairs of capacitor C of resistance R, 4 charging.When E signal amplitude is less than F signal amplitude, comparator U2 upset, output low level, output signal is as shown in G.
This circuit application capacitor C 3 is different from the capacitance of capacitor C 4, thereby causes E signal and the different feature of the F signal rate of rise, by the capacitance size of control capacittance C3 and C4, thus the width of adjusting G.
Operation principle of the present invention is, if the IGBT that IGBT drives signal generating circuit output signal greater than width limiting circuit to arrange drives the deration of signal, width limiting circuit forces the IGBT of output fixed width to drive signal, guarantees that the normal work of IGBT is not damaged.IGBT drives the deration of signal to be less than the driving width that width limiting circuit arranges, and this circuit is inoperative, and IGBT drives the deration of signal to be subject to Single-chip Controlling.