CN101916985A - Monitoring method for IGBT collector overvoltage double protection - Google Patents
Monitoring method for IGBT collector overvoltage double protection Download PDFInfo
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- CN101916985A CN101916985A CN 201010231980 CN201010231980A CN101916985A CN 101916985 A CN101916985 A CN 101916985A CN 201010231980 CN201010231980 CN 201010231980 CN 201010231980 A CN201010231980 A CN 201010231980A CN 101916985 A CN101916985 A CN 101916985A
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Abstract
The invention relates to a monitoring method for IGBT collector overvoltage double protection. The IGBT collector voltage double protection circuit comprises an IGBT collector voltage double protection circuit, wherein the IGBT collector voltage double protection circuit comprises an IGBT, a microcontroller, an IGBT driving circuit, a resistor R1 and a resistor R2, the microcontroller comprises comparators CMP1 and CMP2, a first IGBT control circuit and a second IGBT control circuit, negative input ends of the comparators CMP1 and CMP2 are respectively connected with reference voltages Vref1 and Vref2, and output ends of the comparators CMP1 are respectively connected with the first IGBT control circuit and the second IGBT control circuit, wherein when the comparator CMP1 outputs a high level, the microcontroller generates an interrupt processing program INT1 through processing of the first IGBT control circuit; when the comparator CMP2 outputs a high level, the IGBT is turned off by the processing of the second IGBT control circuit, and the microcontroller generates an interrupt handler INT 2. The invention can realize real-time monitoring of the voltage of the IGBT collector, solves the technical problem that the IGBT is damaged due to untimely overvoltage protection of the IGBT in the prior art, and improves the safety and reliability of the whole induction cooker.
Description
Technical field
The present invention is a kind of method for supervising of IGBT collector overvoltage double protection; particularly a kind ofly IGBT is protected, prevents the guard method that the IGBT overvoltage damages when being used for electromagnetic oven power control device IGBT collector voltage and surpassing its rated operational voltage, belong to the innovative technology of electromagnetic oven power control device IGBT protection method for supervising.
Background technology
Electromagnetic oven power control device insulated gate bipolar transistor (being called for short IGBT) all is provided with overvoltage crowbar at present; this protective circuit reduces IGBT service time automatically when detecting IGBT collector electrode C overvoltage; but IGBT service time can not reduce too much; otherwise the electromagnetic oven power fluctuation is too big; so for electromagnetic oven power is stablized; the value that IGBT service time reduces is less relatively; but when line voltage has than great fluctuation process; the situation that still can occur IGBT collector electrode C overtension after IGBT service time reduces; even also high before reducing than the service time, when the IGBT overvoltage will occurring behind the certain value, IGBT collector electrode C voltage height damages problem.
Summary of the invention
The objective of the invention is to consider the problems referred to above and a kind of real-time monitoring that can realize the IGBT collector voltage is provided; can effectively solve technical problem untimely in the prior art, that cause IGBT to damage, the method for supervising of the IGBT collector overvoltage double protection of the safety and reliability of raising electromagnetic oven complete machine to the IGBT overvoltage protection.
Technical scheme of the present invention is: the method for supervising of IGBT collector overvoltage double protection of the present invention, include IGBT current collection extreme pressure dual-protection circuit, IGBT current collection extreme pressure dual-protection circuit comprises IGBT, microcontroller, the IGBT drive circuit, resistance R 1, resistance R 2, the output of IGBT drive circuit is connected with the grid G of IGBT, the collector electrode C of IGBT is by the divider resistance R1 of series connection, the input that connects microcontroller after resistance R 2 dividing potential drops, the output of microcontroller is connected with IGBT drive circuit input, microcontroller comprises comparator C MP1, CMP2, the one IGBT control circuit, the 2nd IGBT control circuit, comparator C MP1, the negative input end of CMP2 connects reference voltage Vref 1 respectively, Vref2, output connects an IGBT control circuit respectively, the 2nd IGBT control circuit, when wherein comparator C MP1 exports high level, by the processing of an IGBT control circuit, microcontroller produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit, IGBT turn-offed, and microcontroller produces interrupt handling routine INT2.
The size of above-mentioned reference voltage Vref 1 and Vref2 is selected by the inner related register of microcontroller, and Vref1＞Vref2.
The above-mentioned interrupt routine INT1 that whenever enters a time, the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton.
The above-mentioned interrupt routine INT2 that whenever enters a time, IGBT is turn-offed always, have up to microcontroller inside one restart signal IGBT could be open-minded again.
The present invention compared with prior art; have following beneficial effect: microcontroller of the present invention passes through the unusual detection of IGBT C pole tension; reduce IGBT service time timely or directly turn-off IGBT and guarantee that power device IGBT is operated in normal condition; by real-time monitoring to electromagnetic oven IGBT C pole tension; effectively solve technical problem untimely in the prior art, that cause IGBT to damage, improve the safety and reliability of electromagnetic oven complete machine the IGBT overvoltage protection.The present invention is that a kind of design is ingenious, function admirable, the method for supervising of convenient and practical IGBT C utmost point overvoltage double protection.
Description of drawings
Fig. 1 is circuit theory diagrams of the present invention;
Fig. 2 is the INT1 interrupt handling routine flow chart of the embodiment of the invention.
Fig. 3 is the INT2 interrupt handling routine flow chart of the embodiment of the invention.
Embodiment
Embodiment:
Circuit theory diagrams of the present invention as shown in Figure 1, include IGBT current collection extreme pressure dual-protection circuit, IGBT current collection extreme pressure dual-protection circuit comprises IGBT, microcontroller 1, IGBT drive circuit 2, resistance R 1, resistance R 2, the output of IGBT drive circuit 2 is connected with the grid G of IGBT, the collector electrode C of IGBT is by the divider resistance R1 of series connection, connect microcontroller 1 input after resistance R 2 dividing potential drops, the output of microcontroller 1 is connected with the input of IGBT drive circuit 2, microcontroller 1 comprises comparator C MP1, CMP2, the one IGBT control circuit 11, the 2nd IGBT control circuit 12, comparator C MP1, the negative input end of CMP2 connects reference voltage Vref 1 respectively, Vref2, output connects an IGBT control circuit 11 respectively, the 2nd IGBT control circuit 12, when wherein comparator C MP1 exports high level, by the processing of an IGBT control circuit 11, microcontroller 1 produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit 12, IGBT turn-offed, and microcontroller 1 produces interrupt handling routine INT2.
The size of above-mentioned reference voltage Vref 1 and Vref2 is selected by microcontroller 1 inner related register, and Vref1＞Vref2.
The above-mentioned interrupt routine INT1 that whenever enters a time, the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton.
In the present embodiment, the above-mentioned interrupt routine INT2 that whenever enters a time, IGBT is turn-offed always, have up to microcontroller 1 inside one restart signal IGBT could be open-minded again.
In the present embodiment, IGBT drive circuit 2 is a prior art circuits, does not repeat them here.
The one IGBT control circuit 11, the 2nd IGBT control circuit 12 belong to the modular circuit among the integrated heating chip MH2C33P of Sanyo.
If IGBT collector electrode C voltage is Vc, IGBT C utmost point rated voltage is Vo.
Vc satisfies condition when IGBT collector electrode C voltage: when Vc*R2/ (R1+R2)＞Vref1 and Vo-Vc＜Vo*10%, comparator C MP1 makes microcontroller produce interrupt handling routine INT1 to an IGBT control circuit 11 output high level signals.
MP2 satisfies condition when comparator C: Vc*R2/ (R1+R2)＞Vref 2, and during Vc ≈ Vo, CMP2 directly turn-offs IGBT, and makes microcontroller 1 produce interrupt handling routine INT2 to the 2nd IGBT control circuit 12 output high level signals.
Operation principle of the present invention is as follows:
As shown in Figure 2, whenever enter interrupt handling routine INT1 one time, the specified register of microcontroller 1 (program pointer and general register A, B etc.) stacked, by adjustment to IGBT driving pulse width register PPG value, current PPG subtracts 1 or subtract 2, make the next service time Ton of IGBT reduce time Δ T, and Δ T＜Ton, guarantee corresponding the reducing of collector electrode C voltage of I GBT IGBT in next switch periods, last specified register is popped, withdraw from the INT1 interrupt handling routine, just in the interrupt routine of INT1, finish suitable adjustment IGBT driving pulse width.
As shown in Figure 3, whenever enter interrupt handling routine INT2 one time, the specified register of microcontroller is stacked, by the turn-off time of software setting IGBT, the turn-off time finishes the back microcontroller and restarts IGBT, and last specified register is popped, withdraw from interrupt handling routine, the INT2 interrupt handling routine guarantees that its safety is guaranteed in the IGBT break-off when voltage ripple of power network is big.
Claims (4)
1. the method for supervising of an IGBT collector overvoltage double protection, include IGBT current collection extreme pressure dual-protection circuit, IGBT current collection extreme pressure dual-protection circuit comprises IGBT, microcontroller (1), IGBT drive circuit (2), resistance R 1, resistance R 2, the output of IGBT drive circuit (2) is connected with the grid G of I GBT, the collector electrode C of IGBT is by the divider resistance R1 of series connection, connect microcontroller (1) input after resistance R 2 dividing potential drops, the output of microcontroller (1) is connected with IGBT drive circuit (2) input, microcontroller (1) comprises comparator C MP1, CMP2, the one IGBT control circuit (11), the 2nd IGBT control circuit (12), comparator C MP1, the negative input end of CMP2 connects reference voltage Vref 1 respectively, Vref2, output connects an IGBT control circuit (11) respectively, the 2nd IGBT control circuit (12), when it is characterized in that comparator C MP1 output high level, by the processing of an IGBT control circuit (11), microcontroller (1) produces interrupt handling routine INT1; When described comparator C MP2 exported high level, by the processing of the 2nd IGBT control circuit (12), IGBT turn-offed, and microcontroller (1) produces interrupt handling routine INT2.
2. the method for supervising of IGBT collector overvoltage double protection according to claim 1 is characterized in that the size of above-mentioned reference voltage Vref 1 and Vref2 is selected by the inner related register of microcontroller (1), and Vref1＞Vref2.
3. the method for supervising of IGBT collector overvoltage double protection according to claim 1 is characterized in that the above-mentioned interrupt routine INT1 that whenever enters a time, and the next service time Ton of IGBT reduces time Δ T, and Δ T＜Ton.
4. the method for supervising of IGBT collector overvoltage double protection according to claim 1; it is characterized in that the above-mentioned interrupt routine INT2 that whenever enters a time; IGBT is turn-offed always, have up to microcontroller (1) inside one restart signal IGBT could be open-minded again.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010231980 CN101916985B (en) | 2010-07-20 | 2010-07-20 | Monitoring method of IGBT collector overvoltage double protection |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010231980 CN101916985B (en) | 2010-07-20 | 2010-07-20 | Monitoring method of IGBT collector overvoltage double protection |
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| CN101916985A true CN101916985A (en) | 2010-12-15 |
| CN101916985B CN101916985B (en) | 2013-10-09 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102252355A (en) * | 2011-08-05 | 2011-11-23 | 美的集团有限公司 | Control method for continuous low-power heating of induction cooker |
| CN102548073A (en) * | 2011-12-31 | 2012-07-04 | 美的集团有限公司 | IGBT drive circuit of electromagnetic induction heating equipment |
| CN102751968A (en) * | 2011-06-16 | 2012-10-24 | 成都芯源系统有限公司 | High-voltage device and overvoltage protection method of high-voltage transistor |
| CN103108427A (en) * | 2011-11-14 | 2013-05-15 | 深圳市长运通光电技术有限公司 | Light emitting diode (LED) lamp and high voltage monitoring protection circuit |
| CN104244481A (en) * | 2013-06-14 | 2014-12-24 | 美的集团股份有限公司 | Electromagnetic induction heating device and heating control method thereof |
| CN104237691A (en) * | 2014-09-19 | 2014-12-24 | 四川长虹电器股份有限公司 | Debugging method of frequency converter |
| CN105514943A (en) * | 2014-10-08 | 2016-04-20 | 意法半导体国际有限公司 | Over-voltage protection circuit for drive transistor |
| CN108718074A (en) * | 2018-07-06 | 2018-10-30 | 青岛海信电器股份有限公司 | A kind of overvoltage crowbar and terminal installation |
| CN112291875A (en) * | 2020-11-06 | 2021-01-29 | 广东瑞德智能科技股份有限公司 | Back pressure protection method and device for induction cooker and induction cooker |
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| JP2005006464A (en) * | 2003-06-13 | 2005-01-06 | Hitachi Ltd | Protective device of power control semiconductor element and power converting device provided with it |
| CN201178498Y (en) * | 2008-04-03 | 2009-01-07 | 深圳和而泰智能控制股份有限公司 | Surge protection circuit for electromagentic furnace |
| CN101552464A (en) * | 2009-04-22 | 2009-10-07 | 九阳股份有限公司 | IGBT over-voltage protection method and over-voltage protection circuit adopting method |
-
2010
- 2010-07-20 CN CN 201010231980 patent/CN101916985B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005006464A (en) * | 2003-06-13 | 2005-01-06 | Hitachi Ltd | Protective device of power control semiconductor element and power converting device provided with it |
| CN201178498Y (en) * | 2008-04-03 | 2009-01-07 | 深圳和而泰智能控制股份有限公司 | Surge protection circuit for electromagentic furnace |
| CN101552464A (en) * | 2009-04-22 | 2009-10-07 | 九阳股份有限公司 | IGBT over-voltage protection method and over-voltage protection circuit adopting method |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751968B (en) * | 2011-06-16 | 2015-03-11 | 成都芯源系统有限公司 | High-voltage device and overvoltage protection method of high-voltage transistor |
| CN102751968A (en) * | 2011-06-16 | 2012-10-24 | 成都芯源系统有限公司 | High-voltage device and overvoltage protection method of high-voltage transistor |
| CN102252355A (en) * | 2011-08-05 | 2011-11-23 | 美的集团有限公司 | Control method for continuous low-power heating of induction cooker |
| CN103108427A (en) * | 2011-11-14 | 2013-05-15 | 深圳市长运通光电技术有限公司 | Light emitting diode (LED) lamp and high voltage monitoring protection circuit |
| CN103108427B (en) * | 2011-11-14 | 2015-05-13 | 深圳市长运通光电技术有限公司 | Light emitting diode (LED) drive chip, LED lamp and high voltage monitoring protection circuit |
| CN102548073A (en) * | 2011-12-31 | 2012-07-04 | 美的集团有限公司 | IGBT drive circuit of electromagnetic induction heating equipment |
| CN102548073B (en) * | 2011-12-31 | 2014-12-10 | 美的集团股份有限公司 | IGBT (Insulated Gate Bipolar Transistor) drive circuit of electromagnetic induction heating equipment |
| CN104244481B (en) * | 2013-06-14 | 2016-02-10 | 美的集团股份有限公司 | The method for heating and controlling of electromagnetic induction heater and electromagnetic induction heater |
| CN104244481A (en) * | 2013-06-14 | 2014-12-24 | 美的集团股份有限公司 | Electromagnetic induction heating device and heating control method thereof |
| CN104237691A (en) * | 2014-09-19 | 2014-12-24 | 四川长虹电器股份有限公司 | Debugging method of frequency converter |
| CN105514943A (en) * | 2014-10-08 | 2016-04-20 | 意法半导体国际有限公司 | Over-voltage protection circuit for drive transistor |
| CN105514943B (en) * | 2014-10-08 | 2018-08-14 | 意法半导体国际有限公司 | Excess voltage protection for driving transistor |
| CN108718074A (en) * | 2018-07-06 | 2018-10-30 | 青岛海信电器股份有限公司 | A kind of overvoltage crowbar and terminal installation |
| CN112291875A (en) * | 2020-11-06 | 2021-01-29 | 广东瑞德智能科技股份有限公司 | Back pressure protection method and device for induction cooker and induction cooker |
| CN112291875B (en) * | 2020-11-06 | 2022-09-16 | 广东瑞德智能科技股份有限公司 | Back pressure protection method and device for induction cooker and induction cooker |
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| CN101916985B (en) | 2013-10-09 |
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