CN101916768A - Efficient antistatic gallium nitride-based light-emitting device and manufacturing method thereof - Google Patents
Efficient antistatic gallium nitride-based light-emitting device and manufacturing method thereof Download PDFInfo
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- CN101916768A CN101916768A CN2010101810489A CN201010181048A CN101916768A CN 101916768 A CN101916768 A CN 101916768A CN 2010101810489 A CN2010101810489 A CN 2010101810489A CN 201010181048 A CN201010181048 A CN 201010181048A CN 101916768 A CN101916768 A CN 101916768A
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Abstract
The invention discloses an efficient antistatic gallium nitride-based light-emitting device and a manufacturing method thereof. The device is characterized in that a cushion layer, an N-type gallium nitride layer, a multiple quantum well (MQW) structure of a light-emitting layer and a P-type gallium nitride layer are grown on a sapphire substrate in sequence; epitaxial layers between a light-emitting diode (LED) and protected diodes are etched to the substrate; each protected diode is formed by connecting two diodes in series; the two protected diodes can be connected in series via the two N poles or two P poles; and after the two protected diodes are connected in series, the other two ends are respectively connected with the P and N poles of the LED. Thus two protected diodes and one LED are integrated in one LED device on the basis of not changing the existing gallium nitride-based epitaxial structure, and the two protected diodes are connected with the LED in parallel after being connected with each other in series, thus improving the antistatic capability of the product, reducing the procedure of connecting the protected diodes in parallel during packaging the subsequent products, reducing the procedures, lowering the product cost and reducing the power consumption of single protected diode.
Description
Technical field
The present invention relates to the structure of a kind of gallium nitride (GaN) based LED device and make flow process; especially under the situation that does not change existing luminescent device epitaxial structure; by luminescent device of the protection diode of integrated light-emitting diode, two series connection formation simultaneously in luminescent device, improve the antistatic property of light-emitting diode.
Background technology
Advantages such as that light-emitting diode (LED) has is efficient, energy-conservation, environmental protection, traffic indication, indoor outside aspects such as full color demonstration, LCD TV backlight source have a wide range of applications, especially utilize great power LED may realize semiconductor solid lighting, it is expected to become light source of new generation and enters huge numbers of families, cause the revolution on the human illumination history, wherein apply gold-tinted fluorescent material on the blue-light LED chip of Sapphire Substrate epitaxy of gallium nitride, blue-light excited gold-tinted fluorescent material sends gold-tinted, blue light and yellow light mix obtain white light, thereby just can obtain white light with blue-ray LED.The gallium nitride backing material is at present common two kinds, be sapphire and carborundum, the carborundum machining property is poor, cost an arm and a leg and the problem of patent aspect makes its application obtain restriction, therefore the current substrate that is used for GaN epitaxial growth mainly is a sapphire, epitaxial layer of gallium nitride and sapphire lattice mismatch are quite big, so growing gallium nitride causes a large amount of defectives easily on sapphire, and these defectives reduce the luminescent device antistatic effect greatly; Because Sapphire Substrate is non-conductive, the static on the light-emitting diode can not effectively be discharged, so all there is antistatic problem in the gallium nitride based light emitting diode of Sapphire Substrate on the other hand.
Main at present passing through also has by the change epitaxial structure to reach the raising antistatic effect encapsulating or use protection diode raising antistatic effect in parallel in the circuit.
Summary of the invention
The object of the present invention is to provide a kind of efficient antistatic gallium nitride-based light-emitting device, light-emitting diode forms when chip manufacturing with the protection diode simultaneously, and light-emitting diode and protection diode constitute a luminescent device together, have antistatic effect like this.
Another object of the present invention is to provide the manufacture method of this antistatic GaN-based luminescent device.
Technical scheme of the present invention is: a kind of efficient antistatic gallium nitride-based light-emitting device comprises substrate, is resilient coating, n type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW, P type gallium nitride layer successively on the substrate.Transparency conducting layer is positioned on the subregion of described P type epitaxy of gallium nitride, and the LED P electrode is positioned on the subregion of transparency conducting layer, and forms ohmic contact with described P type gallium nitride; The N electrode is positioned on the subregion of described n type gallium nitride epitaxial loayer; The antistatic protection diode is positioned on another part zone of substrate epitaxial; this regional place extension and LED epitaxial are isolated fully; and on the P of this regional extension type gallium nitride, generate the P electrode that this protects diode, generate the N electrode of protection diode on the n type gallium nitride of this regional extension.Two protection diodes link to each other with the N electrode, and the epitaxial loayer in the luminescent device is divided into the part of two isolation: a part is the epitaxial loayer of light-emitting diode, and another part is the epitaxial loayers of two protection diodes; Two protection diodes link to each other with the P electrode, and the epitaxial loayer in the luminescent device is divided into the part of three isolation: a part is the epitaxial loayer of light-emitting diode, in addition two epitaxial loayers that parts are two protection diodes.
Two protection diodes link to each other with the N electrode, and two P electrodes of two protection diodes link to each other with P electrode, the N electrode of light-emitting diode by metal respectively; Two protection diodes link to each other with the P electrode, and two N electrodes of two protection diodes link to each other with P electrode, the N electrode of light-emitting diode by metal respectively; Connect metal deposition on insulating barrier; Removing LED P, N electrode pad zone outgrowth insulating barrier.
Gallium nitride based light emitting diode and two gallium nitrate based protection diodes are integrated in the same luminescent device; and two protection diodes series connection: link to each other with P or N electrode, two N electrodes at two ends or P electrode are connected by metal with P, the N electrode of light-emitting diode respectively more in addition.This luminescent device was identical with conventional light-emitting diode when like this, follow-up encapsulation was used.
Among the present invention; the material of light-emitting diode and protection diode Ohm contact electrode uses the combination of Ti, Al, Ni, Au or these materials, the material selection silicon dioxide of insulating barrier and packed layer, silicon nitride; spin-coating glass method (SOG spin on glass), polyimides (PI) etc.
The manufacture method of above-mentioned a kind of efficient antistatic gallium nitride-based light-emitting device, its step comprises: growth forms resilient coating, n type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW, P type gallium nitride layer successively on substrate sapphire; The etching part epitaxial loayer, the degree of depth is up to Sapphire Substrate, the epitaxial loayer of protection diode and light-emitting diode is isolated fully, if two protection diodes link to each other with the N electrode, epitaxial loayer is divided into two parts of isolation, light-emitting diode accounts for one of them independent sector, and two protection diodes account for the another one independent sector; If two protection diodes link to each other with the P electrode, epitaxial loayer is divided into three isolated parts, and light-emitting diode accounts for one of them independent sector, two protection diodes respectively account for an independent sector; At light-emitting diode and protection diode area etching part epitaxial loayer, comprise P type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW simultaneously, etch into the n type gallium nitride layer; Deposit transparent conductive layer on led area P type gallium nitride layer; Deposition insulation filling layer in the groove that the 2nd step etching forms; At the LED P that goes on foot down, N electrode and two position depositing insulating layers of protecting diode N or P electrode will grow and be connected metal; Depositing light-emitting diode P, N electrode reach and two P or interelectrode metals that are connected of N of protecting diodes respectively; At the region growing insulating protective layer that removes LED P, N pressure welding point; By attenuate, draw split, test, sorting, form each independently luminescent device respectively.
The invention has the advantages that: the light-emitting diode of efficient antistatic gallium nitride-based light-emitting device forms when chip manufacturing with the protection diode simultaneously; light-emitting diode and protection diode constitute a luminescent device together; so not only has antistatic effect; and can simplify when encapsulation and also there is no need protection diode in parallel in addition when making flow process, encapsulation; improve the product yield, also do not change existing epitaxial layer structure simultaneously.
When parallel connection protection diode, can single protection diode is directly in parallel with light-emitting diode, but, can influence the use of light-emitting diode because single protection diode has certain power consumption.The present invention is connected in parallel on the protection diode of two series connection and light-emitting diode in the circuit, and these two protection diodes can be that two N electrodes link to each other, and also can be that two P electrodes link to each other.
Operation principle of the present invention is described: as Figure 1A and Fig. 2 A, when there is the forward operating voltage at luminous tube two ends 101, when just the A terminal potential is higher than the B end among Figure 1A or Fig. 2 A, light-emitting diode 101 is in conducting state, protection diode 103,105 ends, 102,106 conductings of protection diode, and whole anti-static protection circuit is in cut-off state, light-emitting diode 101 operate as normal can not produce accumulation of static electricity; When there is accumulation of static electricity pulse greater than protection diode 103,105 reverse breakdown voltages at light-emitting diode 101 two ends; light-emitting diode 101 is in oppositely; not conducting, protection diode 103,105 conductings that this moment is in parallel, protection diode 102; 106 reverse-conductings; the accumulation of static electricity electric charge discharges through protection diode 102,103 paths, 105,106 paths, and light-emitting diode 101 is protected, and is in cut-off state; light-emitting diode 101 operate as normal can be owing to accumulation of static electricity destroys.When there is the electrostatic pulse of reverse breakdown voltage less than protection diode 102,106 at light-emitting diode 101 two ends; protection diode 103; 105 may conductings but with 102 in the circuit, the 105th, end, and therefore whole anti-static protective circuit ends, and has reduced power consumption.
Description of drawings
The protection diode N of Figure 1A antistatic GaN-based luminescent device equivalent circuit diagram that links to each other;
The protection diode P of Fig. 2 A antistatic GaN-based luminescent device equivalent circuit diagram that links to each other;
The protection diode N of Figure 1B antistatic GaN-based luminescent device cross section structure figure that links to each other;
The protection diode P of Fig. 2 B antistatic GaN-based luminescent device cross section structure figure that links to each other;
The protection diode N of Fig. 1 C antistatic GaN-based luminescent device plane structure chart that links to each other
The protection diode P of Fig. 2 C antistatic GaN-based luminescent device plane structure chart that links to each other.
Each mark is as follows among the figure:
Figure 1A Fig. 2 A 101 light-emitting diodes 102,103,105,106 protection diodes
Figure 1B Fig. 2 B
201 substrates (sapphire), 202 resilient coatings, 203 light-emitting diode n type gallium nitride layers
204 light-emitting diode N electrodes
205 light-emitting diode N electrodes are connected metal with protection diode P electrode
Insulation filling layer between 206 protection diodes and LED epitaxial
207 protection diode n type gallium nitride layers, 208 protection diode P type gallium nitride layer
The 209 LED P utmost points are connected metal with protection diode P electrode
The sub-hydrazine layer of 210 LED P-type gallium nitride layers, 211 light-emitting diode volume
212 LED P electrode pads, 213 transparency conducting layers
214 light-emitting diode N electrodes are connected metal with protection diode N electrode
215 two protection diode P electrodes connect metal
216 LED P electrodes are connected metal 220 insulating barriers with protection diode N electrode
Fig. 1 C Fig. 2 C
301 light-emitting diode N electrodes
302 light-emitting diode N electrodes are connected metal with protection diode P electrode
Insulation filling layer between 303 protection diodes and LED epitaxial
Insulating barrier 305 protection diode P electrodes on the 304 protection diode N electrodes
306 LED P electrodes are connected metal with protection diode P electrode
307 transparency conducting layers, 308 LED P electrode pads
310 light-emitting diode N electrodes are connected metal with protection diode N electrode
311 two protection diode P electrodes connect 312 two protections of metal diode N electrode
313 LED P electrodes are connected metal with protection diode N electrode
Embodiment
The manufacturing process of embodiment of the invention efficient antistatic gallium nitride-based light-emitting device
Embodiment one
Embodiment one is two making flow processs that protection diode N electrode links to each other
Step 1: growing epitaxial resilient coating 202, n type gallium nitride layer 203, the sub-hydrazine layer 211 of volume, P type gallium nitride layer 208 successively on Sapphire Substrate 201;
Step 2: etching part epitaxial loayer, the degree of depth is to Sapphire Substrate, the epitaxial loayer of protection diode and light-emitting diode is isolated fully, this step can be passed through inductively coupled plasma (ICP) etching, or method such as wet etching removes epitaxial loayer between protection diode and the light-emitting diode, and the epitaxial loayer of light-emitting diode and protection diode is isolated on sapphire fully;
Step 3: pass through ICP or reactive ion etching machine (RIE) etching part epitaxial loayer at light-emitting diode and protection diode epitaxial zone simultaneously, etch depth is to the n type gallium nitride layer;
Step 4: growth transparency conducting layer 213 on the LED P-type gallium nitride epi region;
Step 5: generate insulating barrier 206 in the groove that step 2 etching forms, this step can reach the planarization purpose by spin coating SOG or spin-on polyimide;
Step 6: is connected metal 209, light-emitting diode N electrode with protection diode P electrode and protects diode P electrode to be connected the insulating protective layer of growing below the metal 205 at the LED P electrode;
Step 7: evaporation metal forms LED P electrode pad 212, light-emitting diode N electrode 204, LED P electrode and and protects diode P electrode to be connected metal 209, light-emitting diode N electrode and protect diode P electrode to be connected metal 205;
Step 8:, expose LED P electrode pad, light-emitting diode N electrode at LED device growth insulating barrier 220.
Step 9: by attenuate, draw split, test, sorting, form single luminescent device respectively.
Embodiment two
Embodiment two is two making flow processs that protection diode P electrode links to each other
Embodiment two with implement one and make flow process in step 2, certain difference is arranged on 7, other step is identical.
Step 2: the etching epitaxial loayer, epitaxial loayer in the device is divided into three isolated parts, light-emitting diode accounts for one of them independent sector, two protection diodes respectively account for two other independent sector;
Step 7: evaporation metal; forming LED P electrode pad 212, light-emitting diode N electrode 204, LED P electrode is connected metal 216, light-emitting diode N electrode with protection diode N electrode and protects diode N electrode to be connected 214, two protections of metal diode P electrode connection metal 215.
Claims (7)
1. efficient antistatic gallium nitride-based light-emitting device; it is characterized in that: grown buffer layer, n type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW, P type gallium nitride layer successively on Sapphire Substrate; the luminescent device epitaxial loayer is etched into two or three extension area of isolation; make light-emitting diode on the part epitaxial loayer area of isolation, another makes two protection diodes to two epitaxial loayer area of isolation.
2. according to the described efficient antistatic gallium nitride-based light-emitting device of claim 1, it is characterized in that: light-emitting diode is on same substrate with the epitaxial loayer of protection diode in the device, but isolates fully between light-emitting diode and the protection diode epitaxial layer.
3. according to a kind of efficient antistatic gallium nitride-based light-emitting device as claimed in claim 1 or 2, it is characterized in that: two protection diode types of attachment have following dual mode: a kind of is that two series connection protection diodes link to each other with the N electrode, epitaxial loayer is etched into two area of isolation, and light-emitting diode and two protection diodes respectively account for an area of isolation; Another kind is that two series connection protection diodes link to each other with the P electrode, and epitaxial loayer is etched into three area of isolation, and light-emitting diode accounts for one of them area of isolation, and two protection diodes also account for an area of isolation separately.
4. a kind of efficient antistatic gallium nitride-based light-emitting device according to claim 3 is characterized in that: the protection diode is in series by two diodes, and these two diodes can be that two P electrodes link to each other, and also can be that two N electrodes link to each other.
5. a kind of efficient antistatic gallium nitride-based light-emitting device according to claim 1 is characterized in that: LED P, N electrode are connected by metal respectively with other the two poles of the earth, protection diode series connection back in the device.
6. a kind of efficient antistatic gallium nitride-based light-emitting device according to claim 5, it is characterized in that: the protection diode is connected with two kinds of modes with luminous tube: 1) the protection diode is connected with the N utmost point, and then two P electrodes of series connection back protection diode are connected with LED P, N respectively; 2) the protection diode connects with the P utmost point, and then two N electrodes of series connection back protection diode are connected with LED P, N respectively.
7. the manufacture method of an efficient antistatic gallium nitride-based light-emitting device, its step comprises:
1) at Sapphire Substrate grown buffer layer successively, n type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW, P type gallium nitride layer;
2) etching is removed whole epitaxial loayers of subregion, comprise P type gallium nitride layer, the sub-hydrazine structure of luminescent layer volume MQW, n type gallium nitride layer, resilient coating, expose the substrate sapphire layer, form the epitaxial loayer of two or three isolation: LED epitaxial layer and protection diode epitaxial layer; The protection diode is connected with the P electrode, and then the epitaxial loayer of two protection diodes is also isolated; The protection diode is connected with the N electrode, and then the epitaxial loayer of two protection diodes links to each other;
3) etched portions zone epitaxial loayer, two protection diodes are that the P electrode links to each other, the epitaxial loayer that three isolation are then arranged, etching P type gallium nitride layer and the sub-hydrazine structure of luminescent layer volume MQW respectively in the subregion of the epitaxial loayer of three isolation expose trizonal n type gallium nitride layer; Two protection diodes are that the N electrode links to each other, and the epitaxial loayer of two isolation is then arranged, and the part epitaxial loayer on these two isolated areas of etching is removed P type gallium nitride layer and the sub-hydrazine structure of luminescent layer volume MQW, exposes the n type gallium nitride layer;
4) at the P of light-emitting diode type gallium nitride layer deposit transparent conductive layer, and at the insulating barrier of transparency conducting layer and n type gallium nitride layer deposition P, N electrode and respective regions;
5) P, the N electrode with light-emitting diode is connected by metal with the N or the P electrode of two protection diodes of series connection: two series connection protection diodes link with the P electrode, then connect the N electrode of two protection diodes and P, the N electrode of light-emitting diode with metal; Two series connection protection diodes link with the N electrode, then connect the P electrode of two protection diodes and P, the N electrode of light-emitting diode with metal;
6) LED P electrode pad and N electrode zone outgrowth insulating barrier will be removed on the luminescent device;
7) by attenuate, draw split, test, sorting, form single luminescent device respectively.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315240A (en) * | 2011-09-05 | 2012-01-11 | 映瑞光电科技(上海)有限公司 | High-voltage nitride LED (Light-Emitting Diode) circuit and corresponding high-voltage nitride LED device |
| CN103426883A (en) * | 2012-05-20 | 2013-12-04 | 朱江 | Electric potential distribution-adjustable semiconductor device and preparing method of semiconductor device |
| CN107293629A (en) * | 2017-07-31 | 2017-10-24 | 广东工业大学 | A kind of ultraviolet LED epitaxial chip inverted structure and preparation method thereof |
| CN108649047A (en) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | Flip chip type light-emitting diode chip for backlight unit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042682A (en) * | 2005-07-29 | 2007-02-15 | Sanken Electric Co Ltd | Composite semiconductor device of semiconductor light emitting element and protection element, and its manufacturing method |
| JP2007157926A (en) * | 2005-12-02 | 2007-06-21 | Sanken Electric Co Ltd | Semiconductor light emitting device with protective diode and its manufacturing method |
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2010
- 2010-05-19 CN CN201010181048A patent/CN101916768B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007042682A (en) * | 2005-07-29 | 2007-02-15 | Sanken Electric Co Ltd | Composite semiconductor device of semiconductor light emitting element and protection element, and its manufacturing method |
| JP2007157926A (en) * | 2005-12-02 | 2007-06-21 | Sanken Electric Co Ltd | Semiconductor light emitting device with protective diode and its manufacturing method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315240A (en) * | 2011-09-05 | 2012-01-11 | 映瑞光电科技(上海)有限公司 | High-voltage nitride LED (Light-Emitting Diode) circuit and corresponding high-voltage nitride LED device |
| CN103426883A (en) * | 2012-05-20 | 2013-12-04 | 朱江 | Electric potential distribution-adjustable semiconductor device and preparing method of semiconductor device |
| CN103426883B (en) * | 2012-05-20 | 2016-08-24 | 朱江 | A kind of semiconductor device of scalable Potential Distributing and preparation method thereof |
| CN108649047A (en) * | 2013-07-10 | 2018-10-12 | 首尔伟傲世有限公司 | Flip chip type light-emitting diode chip for backlight unit |
| CN107293629A (en) * | 2017-07-31 | 2017-10-24 | 广东工业大学 | A kind of ultraviolet LED epitaxial chip inverted structure and preparation method thereof |
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