CN1019052B - 拱形光敏传感组件 - Google Patents

拱形光敏传感组件

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CN1019052B
CN1019052B CN89102013.6A CN89102013A CN1019052B CN 1019052 B CN1019052 B CN 1019052B CN 89102013 A CN89102013 A CN 89102013A CN 1019052 B CN1019052 B CN 1019052B
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CN1037965A (zh
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丹羽猛
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Shimadzu Corp
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02Investigating particle size or size distribution
    • G01N15/0205Investigating particle size or size distribution by optical means
    • G01N15/0211Investigating a scatter or diffraction pattern
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N2021/4704Angular selective
    • G01N2021/4711Multiangle measurement
    • G01N2021/4716Using a ring of sensors, or a combination of diaphragm and sensors; Annular sensor

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Abstract

一种用在某一光学装置中的拱形光敏传感组件,该光学装置用于探测被诸如流体介质中的悬浮粒子散射光线的径向强度分布。该组件包括三组拱形的光敏元件,用于调整该光学装置的光轴。拱形光敏传感组件在该光学装置中用作一个光探测器。

Description

本发明涉及一个用在某一光学装置中的拱形光敏传感组件,该光学装置可用来测量被流体介质中的悬浮微粒向前散射的光线的强度分布。
比如,在各种测量粒子粒径分布的手段中,有一种方法基于流体介质中的悬浮粒子散射光线的小角度光散射理论。按照这种方法,共同使用图4中用图示意的光学系统与图5中示意的光敏传感组件。图4中的光学系统基本上有一个诸如激光器的光源1,一个透镜组2,该透镜组使光束F具有所要求的强度分布,一个透明的流动样品池3,悬浮有样品粒子的悬浮液在其中流动,一傅立叶(Fourier)变换透镜4,以及一个由图5所示的一组同心的半圆形光敏元件Si(i=1,2,……N)组成的光探测器5a。在图4的光学系统中,射入流动样品池3的光束F被样品粒子散射或衍射,然后被傅立叶变换透镜4聚焦为圆形照射在探测器5上,形成一强度沿径向变化的圆形象。该径向强度分布由上述的N个同心的半圆形光敏元件Si检测出来,然后由一个图中未出现的微机根据小角散射理论和/或弗朗荷弗(Fraunhoher)衍射理论进行计算,最后得出样品粒子的粒径分布。
上述光学系统基本上就构成了一个检测被流体介质中悬浮粒子向前散射的光线的强度分布的装置。对该光学系统而言,必须调整光束F的方向以使之精确地指向各同心的半圆形光敏元件Si的公共中心。此外,调整光束F使之具有所要求的强度分布也很重要。调整光束F的方向和强度分布通常都是通过用肉眼或借助一特殊的调整夹具直接观察光束来完成的。然而,目视的调整方法对眼睛有害,而使用调整 夹具常常是很麻烦且不方便。
本发明意在消除上述光学装置中光束调整的困难,设计该装置的目的是检测被流体介质中悬浮粒子向前散射的光线的强度分布。
本发明的一个目的是提供一种改进的拱形光敏传感组件,以便能不用肉眼观察光束而将其入射光束精确地指向拱形光敏传感组件的公共中心。
本发明的另一个目的是通过上述改进后的拱形光敏传感组件,可不必用肉眼观察光束,而将入射光线调至具有预定的强度分布。
根据本发明,由多个同心的拱形光敏元件构成的拱形光敏传感组件,还不仅包括一些相继邻接的拱形光敏元件,且分为两组,这两组光敏元件最好具有相同的圆心角,且包括第三组同心的拱形光敏元件,其角等同于上述二组拱形光敏元件的角,并且其公共中心与其余拱形光敏元件的公共中心相重合。最好前两组拱形的光敏元件与第三组具有相同的圆心角。此时,在光束横截面半径不大于三组拱形光敏元件中最外面那组元件的半径的前提下,如这三组元件中所有相关的光敏元件受该光束照射而分别输出相同强度的信号,可以证实光束精确地射向拱形光敏传感组件的公共中心。如果不同的光敏元件组的圆心角彼此不同,光束是否射至共同中心可以通过对不同组光敏元件的输出值按它们相应的圆心角进行归一化处理而得知。当光束已经调整好,照射至拱形光敏传感组件的共同中心时,通过调整光束的强度分布,可以进一步使光束具有一预定的强度分布,使半径大于相应于预定的强度分布的数值的任何一个光敏元件上都没有信号输出。
下面将参考附图对本发明进行详细的说明。
图1是本发明实施例的主视图;
图2示出了一部分光学系统,说明了根据光束的方向和强度分布调整光束的方式;
图3说明了本发明的操作步骤;
图4是用于检测流体介质中悬浮粒子粒径分布的一光学装置的原理图;
图5示出了一常规的拱形光敏传感组件。
如图1所示,根据本发明的一个实施例,光探测器5包括多个同心的拱形(半圆形)光敏元件Si,同图5中所示的常规的光探测器5a相似,这些光敏元件Si的圆心角为180°,同时,光探测器还包括另外一些宽度很窄的光敏元件,它们分为两组A和B,这两组的圆心角相同,都大致为90°。在A组和B组中,光敏元件分别用SA1、SA2、……、SAm;SB1、SB2、……SBm表示。对属于A组和B组的拱形光敏元件而言,最外面部分的曲率半径不小于所用光束的最大半径,而最里面部分的曲率半径不大于所用光束的最小半径。此外,本发明的光探测器5还包括第三组拱形光敏元件C。C组的构成和圆心角与A组和B组都相同,其位置以A、B、C三组的公共中心P为对称点呈中心对称。
用光探测器5替代图4中的光探测器5a,从图4中移走流动样品池3和透镜4,图4中的光学系统就简化为图2所示的一简单的光学系统。在此光学系统中,如果光束没有对准所有拱形光敏元件的共同中心P上,A、B、C三组光敏元件的输出信号就会不同,如图3(b)所示,按照离共同中心P的径向距离形成三条曲线Pa、Pb和Pc。如果光束F从共同中心P向上偏折,如图3(a)所示,则输出曲线Pa和Pb彼此重合,曲线Pc下落处的径向距离比Pa和Pb下落 处的径向距离更短。此外,如果光束F精确地对准公共中心P,如图3(c)所示,Pa、Pb和Pc三条曲线会重合在一起。在这种情况下曲线Pa、Pb和Pc共同下落处的径向距离就是光束F的半径。由此,通过调整透镜组2(见图2),观察Pa、Pb和Pc三条曲线一齐下落的位置的变化情况,就实现了对光束强度分布的调整。
根据本发明,从上面的叙述中可见,不必目视光束F本身就能实现对光束F的方向和强度分布的调整。调整光束只须观察A、B和C三组的光敏元件的输出信号即可。
虽然,在上述实施例中三个元件组A、B、和C具有相同的圆心角,不过即使三个元件组的圆心角彼此不同,本发明也可实现。不用说,在这样的实施方案中,需对光敏元件的输出信号依据其所属元件的圆心角进行归一化处理。

Claims (2)

1、一种光敏传感组件,包括有许多同心排列的主拱形光敏元件(Si),用于检测样品受入射光束(F)照射后散射或衍射光的径向强度分布,其特征在于使所述光束(F)与所述同心排列的主拱形光敏元件(Si)同心,所述光敏传感组件设有:
第一附加光敏元件组(A),由同心排列的拱形光敏元件构成,所述第一附加光敏元件组(A)同心地插入所述主拱形光敏元件(Si)组中;
第二附加光敏元件组(B),由同心排列的拱形光敏元件构成,所述第二附加光敏元件组(B)同心地插入所述主拱形光敏元件(Si)组中;
第三附加光敏元件组(C),由同心排列的拱形光敏元件构成,所述第三附加光敏元件组(C)位于所述主拱形光敏元件(Si)的外边,所述第一附加光敏元件组(A)和所述第二附加光敏元件组(B)与所述光主拱形光敏元件(Si)有共同的中心。
2、根据权利要求1所述的光敏传感组年,其特征在于所述第一、第二、第三附加光敏元件组(A、B、C)具有相同的圆心角。
CN89102013.6A 1988-03-09 1989-03-09 拱形光敏传感组件 Expired CN1019052B (zh)

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JP2715604B2 (ja) * 1989-12-18 1998-02-18 株式会社島津製作所 レーザ回折・散乱式粒度分布測定装置
JP2522880B2 (ja) * 1992-03-30 1996-08-07 日機装株式会社 粒度分布測定装置
WO1998035225A1 (en) 1997-02-06 1998-08-13 E. Heller & Company Small volume in vitro analyte sensor
US6338790B1 (en) 1998-10-08 2002-01-15 Therasense, Inc. Small volume in vitro analyte sensor with diffusible or non-leachable redox mediator
GB0103757D0 (en) * 2001-02-16 2001-04-04 Univ Hertfordshire Methods and apparatus for the detection and characterisation of liquid-borne a rticles
DE202008001018U1 (de) * 2008-01-29 2009-06-25 Pepperl + Fuchs Gmbh Sensor zum Nachweis von Objekten durch Lichtbeugung
USD742059S1 (en) * 2014-02-28 2015-10-27 Leeo, Inc. Nightlight and air sensor
USD741728S1 (en) * 2014-02-28 2015-10-27 Leeo, Inc. Nightlight and air sensor
USD741539S1 (en) * 2014-02-28 2015-10-20 Leeo, Inc. Nightlight and air sensor
US10056518B2 (en) 2014-06-23 2018-08-21 Qorvo Us, Inc. Active photonic device having a Darlington configuration
US9933304B2 (en) * 2015-10-02 2018-04-03 Qorvo Us, Inc. Active photonic device having a Darlington configuration with feedback
US10147833B2 (en) 2016-04-15 2018-12-04 Qorvo Us, Inc. Active photonic device having a Darlington configuration with feedback

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US3689772A (en) * 1971-08-18 1972-09-05 Litton Systems Inc Photodetector light pattern detector
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US4274741A (en) * 1979-09-26 1981-06-23 Compagnie Industrielle Des Lasers Device for determining the granulometric composition of a mixture of particles by diffraction of light

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EP0332440B1 (en) 1995-01-04
DE68920347T2 (de) 1995-06-14
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US4977314A (en) 1990-12-11
DE68920347D1 (de) 1995-02-16
EP0332440A3 (en) 1991-07-03
JPH01134245U (zh) 1989-09-13
CN1037965A (zh) 1989-12-13

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