CN1019052B - 拱形光敏传感组件 - Google Patents

拱形光敏传感组件

Info

Publication number
CN1019052B
CN1019052B CN89102013.6A CN89102013A CN1019052B CN 1019052 B CN1019052 B CN 1019052B CN 89102013 A CN89102013 A CN 89102013A CN 1019052 B CN1019052 B CN 1019052B
Authority
CN
China
Prior art keywords
photosensitive elements
additional optical
activated element
group
light activated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN89102013.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN1037965A (zh
Inventor
丹羽猛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Publication of CN1037965A publication Critical patent/CN1037965A/zh
Publication of CN1019052B publication Critical patent/CN1019052B/zh
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/02—Investigating particle size or size distribution
    • G01N15/0205—Investigating particle size or size distribution by optical means
    • G01N15/0211—Investigating a scatter or diffraction pattern
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4704—Angular selective
    • G01N2021/4711—Multiangle measurement
    • G01N2021/4716—Using a ring of sensors, or a combination of diaphragm and sensors; Annular sensor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN89102013.6A 1988-03-09 1989-03-09 拱形光敏传感组件 Expired CN1019052B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63-31401 1988-03-09
JP31401/88 1988-03-09
JP1988031401U JPH01134245U (OSRAM) 1988-03-09 1988-03-09

Publications (2)

Publication Number Publication Date
CN1037965A CN1037965A (zh) 1989-12-13
CN1019052B true CN1019052B (zh) 1992-11-11

Family

ID=12330236

Family Applications (1)

Application Number Title Priority Date Filing Date
CN89102013.6A Expired CN1019052B (zh) 1988-03-09 1989-03-09 拱形光敏传感组件

Country Status (5)

Country Link
US (1) US4977314A (OSRAM)
EP (1) EP0332440B1 (OSRAM)
JP (1) JPH01134245U (OSRAM)
CN (1) CN1019052B (OSRAM)
DE (1) DE68920347T2 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2715604B2 (ja) * 1989-12-18 1998-02-18 株式会社島津製作所 レーザ回折・散乱式粒度分布測定装置
JP2522880B2 (ja) * 1992-03-30 1996-08-07 日機装株式会社 粒度分布測定装置
AU6157898A (en) 1997-02-06 1998-08-26 E. Heller & Company Small volume (in vitro) analyte sensor
US6338790B1 (en) 1998-10-08 2002-01-15 Therasense, Inc. Small volume in vitro analyte sensor with diffusible or non-leachable redox mediator
GB0103757D0 (en) * 2001-02-16 2001-04-04 Univ Hertfordshire Methods and apparatus for the detection and characterisation of liquid-borne a rticles
DE202008001018U1 (de) * 2008-01-29 2009-06-25 Pepperl + Fuchs Gmbh Sensor zum Nachweis von Objekten durch Lichtbeugung
USD742059S1 (en) * 2014-02-28 2015-10-27 Leeo, Inc. Nightlight and air sensor
USD741728S1 (en) * 2014-02-28 2015-10-27 Leeo, Inc. Nightlight and air sensor
USD741539S1 (en) * 2014-02-28 2015-10-20 Leeo, Inc. Nightlight and air sensor
US10056518B2 (en) 2014-06-23 2018-08-21 Qorvo Us, Inc. Active photonic device having a Darlington configuration
US9933304B2 (en) * 2015-10-02 2018-04-03 Qorvo Us, Inc. Active photonic device having a Darlington configuration with feedback
US10147833B2 (en) 2016-04-15 2018-12-04 Qorvo Us, Inc. Active photonic device having a Darlington configuration with feedback

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689772A (en) * 1971-08-18 1972-09-05 Litton Systems Inc Photodetector light pattern detector
US3785735A (en) * 1972-01-19 1974-01-15 Bio Physics Systems Inc Photoanalysis method
US4150360A (en) * 1975-05-29 1979-04-17 Grumman Aerospace Corporation Method and apparatus for classifying biological cells
US4231053A (en) * 1979-03-05 1980-10-28 The United States Of America As Represented By The Secretary Of The Navy High electrical frequency infrared detector
US4274741A (en) * 1979-09-26 1981-06-23 Compagnie Industrielle Des Lasers Device for determining the granulometric composition of a mixture of particles by diffraction of light

Also Published As

Publication number Publication date
DE68920347T2 (de) 1995-06-14
EP0332440B1 (en) 1995-01-04
JPH01134245U (OSRAM) 1989-09-13
DE68920347D1 (de) 1995-02-16
CN1037965A (zh) 1989-12-13
EP0332440A3 (en) 1991-07-03
US4977314A (en) 1990-12-11
EP0332440A2 (en) 1989-09-13

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GR02 Examined patent application
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee