CN101902038B - Electrostatic protector, electrostatic protection system and visual inspection testing method - Google Patents
Electrostatic protector, electrostatic protection system and visual inspection testing method Download PDFInfo
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- CN101902038B CN101902038B CN 200910052211 CN200910052211A CN101902038B CN 101902038 B CN101902038 B CN 101902038B CN 200910052211 CN200910052211 CN 200910052211 CN 200910052211 A CN200910052211 A CN 200910052211A CN 101902038 B CN101902038 B CN 101902038B
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Abstract
The invention relates to an electrostatic protector, an electrostatic protection system using the electrostatic protector and a visual inspection testing method using the electrostatic protection system. The electrostatic protector comprises a first field effect tube and a second field effect tube, wherein the grid of the first field effect tube is connected with the drain of the first field effect tube and the source of the second field effect tube and is used as the input end of the electrostatic protector; and the grid of the second field effect tube is connected with the drain of the second field effect tube and the source of the first field effect tube and is used as the output end of the electrostatic protector. By combining the electrostatic protection and the visual inspection testing, the invention not only can effectively implement the electrostatic protection, but also can be conducted or cut off by controlling the voltage of the electrostatic protector, thereby implementing the visual inspection testing and reducing the technique complexity.
Description
Technical field
The present invention relates to electrostatic protection system and the visual inspection testing method of electrostatic protection device, application electrostatic protection device.
Background technology
In the procedure for producing of display panels, because some external factor such as continuous process operations and carrying or environmental change etc., can produce the accumulation of electrostatic charge usually in panel.Because glass itself is megohmite insulant, unless therefore suitable discharge channel is arranged, electrostatic charge can rest on substrate surface always.When static charge accumulation after some, will produce discharge (ESD, ElectrostaticDischarge).Time when static discharge occurs is very short, and a large amount of electric charges shifts in a short period of time and will produce high electric current, thereby will cause circuit or substrate itself on thin film field-effect pipe (TFT) substrate to be destroyed.For fear of static discharge phenomenon occurring, usually by the electrostatic protection device discharge electrostatic charges being set, the protection display panels.
With reference to figure 1, in illustrated short circuit protection system, wire 02 is used for each pixel cell in the viewing area 10 are connected with integrated circuit (IC) chip for control display and to described each pixel cell signal transmission; Wherein, described signal can be the line scan signals of parity rows, also can be single-row red (R)/green (G)/data-signal of blue (B) three primary colors pixel or its are arranged side by side.Short-circuited conducting sleeve 15 is the becket of 10 peripheries, viewing area, when each bar wire 02 passes short-circuited conducting sleeve 15, links to each other with short-circuited conducting sleeve 15 by electrostatic protection device 06 respectively, so that have equal electromotive force between each wire 02.On the other hand, electrostatic protection device 06 also is arranged between test bus 03 and the public electrode 12, to avoid build up of electrostatic charge on the display casing.
In addition, in the procedure for producing of display panels, another important detection is visual inspection, this detection is used in the situation that inject liquid crystal molecule between substrate not yet adding integrated circuit (IC) chip, detect all pixel cells whether good and line related whether can work.Specifically, in visual inspection, the wire of first each pixel cell being drawn is connected to bus, then applies voltage, whether lights and then judge the ability to work of each pixel cell and line thereof by detecting each pixel cell.In addition, after detection is complete, need to blows step by laser the line in the wiring region is blown, make each pixel cell separate, to avoid the phase mutual interference.
With reference to figure 2, wire 02 is connected with test bus 03 by pin 01.In the visual inspection test process, the wire 02 that extends out is coupled together with test bus 03 by rule wiring zone 04, and test bus 03 is connected with test board 05.By applying test voltage to test board 05, whether all horizontal scanning lines and column signal line can work in the check viewing area.After the visual inspection test is finished, by laser the wire 02 in the rule wiring zone 04 is blown, make each pixel cell independent of one another, no longer interconnected by wire 02.
Can find thus, in existing LCDs, on the one hand, the ESD module 06 that is used for electrostatic protection extensively is present between viewing area and the display casing, puts in length and breadth, and area occupied is more, has wasted screen wide, and has reduced the production integrated level; On the other hand, interconnected after first wire being extended in the visual inspection process, and after test, adopt laser to blow step with interconnected wire disconnection, and increased process complexity, cause productive rate to descend.
Summary of the invention
The problem that the present invention solves provides a kind of electrostatic protection device, except electrostatic protection is provided, also can provide the connected sum in the visual inspection to block.
For addressing the above problem, the invention provides a kind of electrostatic protection device, comprise: the first field effect transistor and the second field effect transistor, the grid of described the first field effect transistor is connected with the source electrode of its drain electrode and described the second field effect transistor, as the input of described electrostatic protection device; The grid of described the second field effect transistor is connected with the source electrode of its drain electrode and described the first field effect transistor, as the output of described electrostatic protection device.
Optionally, described the first field effect transistor has identical cut-in voltage with described the second field effect transistor.
Optionally, described the first field effect transistor has identical semiconductor parameter with described the second field effect transistor.
Optionally, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
Optionally, described cut-in voltage equals the threshold voltage of described field effect transistor.
Optionally, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
Optionally, described threshold voltage is 15V.
Optionally, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 18: 6 to 6: 6.
Optionally, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 16: 6.
The present invention also provides a kind of electrostatic protection device, comprise a plurality of field effect transistor that are connected in series pair, wherein, the right input of first field effect transistor is as the input of described electrostatic protection device, the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device; Each field effect transistor is to comprising the first field effect transistor and the second field effect transistor, the grid of described the first field effect transistor is connected with the source electrode of its drain electrode and described the second field effect transistor, as the right input of described field effect transistor, the grid of described the second field effect transistor is connected with the source electrode of its drain electrode and described the first field effect transistor, as the right output of described field effect transistor.
Optionally, described the first field effect transistor has identical cut-in voltage with described the second field effect transistor.
Optionally, described the first field effect transistor has identical semiconductor parameter with described the second field effect transistor.
Optionally, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
Optionally, described cut-in voltage equals the threshold voltage of described field effect transistor.
Optionally, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
Optionally, described threshold voltage is 15V.
Optionally, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 18: 6 to 6: 6.
Optionally, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 16: 6.
The present invention also provides a kind of display unit electrostatic protection system, comprising: wire, test bus, electrostatic protection device, wherein, described wire connect be used for showing each pixel cell and described test bus; One end of described electrostatic protection device is connected with described wire; the other end connects described test bus, plays electrostatic protective function, and by applying suitable voltage to described electrostatic protection device; it is opened or closure, realize disconnection or connection between each wire.
The present invention also provides a kind of visual inspection test of using above-mentioned electrostatic protection system, comprising: apply the first test voltage, described electrostatic protection device is opened, thereby each wire is interconnected by described electrostatic protection device; By each wire of interconnection, each pixel cell in the described display unit is carried out the visual inspection test.
Optionally, described the first test voltage is greater than the cut-in voltage of described electrostatic protection device.
Optionally, the difference of described the first test voltage and described electrostatic protection device cut-in voltage equates with the normal working voltage of described display unit.
Compared with prior art, electrostatic protection device provided by the invention not only can carry out effective electrostatic protection, also can be by the voltage of control on the described electrostatic protection device, and realize its conducting and block.
On the other hand, the present invention is applied to the visual inspection test with described electrostatic protection device, and the laser that has reduced in the conventional visualization check blows processing step, has reduced the complexity of technique.
Description of drawings
Fig. 1 is the structural representation of electrostatic protection system in the prior art display unit;
Fig. 2 is the structural representation of visual inspection test in the prior art display unit;
Fig. 3 is the structural representation of electrostatic protection device execution mode of the present invention;
Fig. 4 is field effect transistor source-drain electrode electric current I
DsLogarithm and gate-source voltage V
GsConcern schematic diagram;
Fig. 5 is the structural representation of the another kind of execution mode of electrostatic protection device of the present invention;
Fig. 6 is the structural representation of electrostatic protection system execution mode of the present invention;
Fig. 7 is the schematic flow sheet that the present invention uses the visual inspection testing method execution mode of described electrostatic protection system;
Fig. 8 is the structural representation of the applied electrostatic protection system of visual inspection testing method embodiment of the present invention.
Embodiment
Embodiment of the present invention provides a kind of electrostatic protection device; electrostatic protection is combined with the visual inspection test; not only can effectively carry out electrostatic protection; thereby also can make its conducting and block the test of enforcement visual inspection by the voltage of controlling on the described electrostatic protection device, the laser that has reduced in the conventional visualization check blows processing step.In addition, embodiment of the present invention also provides a kind of display unit electrostatic protection system of using described electrostatic protection device, has realized the fail safe short circuit of each parts, and it is wide to have shortened the screen of described display unit.
With reference to figure 3, embodiment of the present invention provides a kind of electrostatic protection device, at least comprise: the first field effect transistor 310 and the second field effect transistor 320, wherein, the grid 311 of the first field effect transistor 310 is connected with the source electrode 323 of its drain electrode 312 and the second field effect transistor 320, as the input of described electrostatic protection device; The grid 321 of the second field effect transistor 320 is connected with the source electrode 313 of its drain electrode 322 and the first field effect transistor 310, as the output of described electrostatic protection device.
In each field effect transistor of described electrostatic protection device, the electric current I between its source-drain electrode
DsAnd the voltage V between its grid source electrode
GsBetween have certain relation.Take the first field effect transistor 310 as example, with reference to figure 4, the electric current I between the source-drain electrode
DsLogarithm and the voltage V between the grid source electrode
GsBetween relation as shown in the figure.As gate source voltage V
GsReach cut-in voltage V
EsdThe time, the raceway groove conducting of the first field effect transistor 310, source-drain current I
DsObviously increase i.e. the first field effect transistor 310 conductings.
When electrostatic charge is assembled and described electrostatic protection device is produced higher electrostatic potential, specifically, when electrostatic potential so that the source electrode 313 of the first field effect transistor 310 and the voltage between 312 of draining reach the cut-in voltage V of the first field effect transistor 310
EsdThe time, 310 conductings of the first field effect transistor, same, at this moment, 320 conductings of the second field effect transistor.Therefore, there is current path between the input of described electrostatic protection device and the output.Described electrostatic charge discharges by described current path, until the voltage at the input of described electrostatic protection device, output two ends obtains balance.
And do not reach the cut-in voltage V of the first field effect transistor 310 when electrostatic potential
EsdThe time, not enough so that the first field effect transistor 310 conductings, therefore, the first field effect transistor 310 is in cut-off state, and is same, and the second field effect transistor 320 also is in cut-off state.In this case, the input of described electrostatic protection device and the cut-off of the current path between the output namely are off state between the input of described electrostatic protection device and the output.
The first field effect transistor 310 can have identical cut-in voltage V with the second field effect transistor 320
Esd, and the cut-in voltage V of described field effect transistor
EsdMore than or equal to its threshold voltage V
ThIn a kind of specific embodiment, can make the described cut-in voltage V of each field effect transistor
EsdBe its threshold voltage V
Th, and by making each field effect transistor have identical threshold voltage V
ThThereby, make the cut-in voltage V of each field effect transistor
EsdIdentical.For example, the threshold voltage of each described field effect transistor can be arranged on a concrete magnitude of voltage in the scope of 10V to 30V.In a kind of specific embodiment, the threshold voltage of described field effect transistor can be set to 15V.In addition, can be by material doped or adopt different process meanses, to the threshold voltage V of described field effect transistor
ThRegulate, thereby regulate its cut-in voltage V
Esd
In a kind of embodiment, the first field effect transistor 310 can have identical semiconductor parameter with the second field effect transistor 320, such as breadth length ratio, doping content etc., at this moment, the threshold voltage V of the first field effect transistor 310 and the second field effect transistor 320
ThIdentical.Because when field effect transistor was in linear district and saturation region, its source-drain current Ids was directly proportional with the breadth length ratio of its raceway groove.Therefore, by the breadth length ratio in controlling filed effect pipe trench road, can regulate the cut-in voltage V of described field effect transistor
EsdFor example, breadth length ratio that can each described field effect transistor is set to a concrete ratio in 18: 6 to 6: 6.In a kind of specific embodiment, breadth length ratio that can each described field effect transistor is set to 16: 6.
In the above-mentioned various execution mode, the first field effect transistor 310 and the second field effect transistor 320 have formed a field effect transistor pair.In other execution mode of electrostatic protection device of the present invention, also can comprise a plurality of field effect transistor that are connected in series pair; Wherein, each field effect transistor is to comprising described the first field effect transistor and described the second field effect transistor, and each field effect transistor centering, described the first field effect transistor be connected the second field effect transistor and connect according to above-mentioned execution mode, the grid that is described the first field effect transistor is connected with the source electrode of its drain electrode and described the second field effect transistor, as the right input of described field effect transistor, the grid of described the second field effect transistor is connected with the source electrode of its drain electrode and described the first field effect transistor, as the right output of described field effect transistor.Each field effect transistor between be connected in series; the input of first field effect transistor is as the input of described electrostatic protection device; the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device.
In a kind of specific embodiment, with reference to figure 5, described electrostatic protection device comprises two field effect transistor pair, and wherein, first field effect transistor is to comprising that 420, the second field effect transistor of field effect transistor 410 and field effect transistor are to comprising field effect transistor 430 and field effect transistor 440.The grid 411 of field effect transistor 410 is connected with the source electrode 423 of its drain electrode 412 and field effect transistor 420; The grid 431 of field effect transistor 430 is connected with the source electrode 443 of its drain electrode 432 and field effect transistor 440; The grid 421 of field effect transistor 420 and drain 422, the grid 441 of the source electrode 423 of field effect transistor 410, field effect transistor 440 and drain 442 and the source electrode 433 of field effect transistor 430 be connected.In addition, field effect transistor 410, field effect transistor 420, field effect transistor 430 and field effect transistor 440 have identical cut-in voltage V
Esd
Because described two field effect transistor to being connected in series, therefore only have the electrostatic potential that ought be applied between described electrostatic protection device input and the output to reach described cut-in voltage V
EsdTwice the time; just can make field effect transistor 410, field effect transistor 420, field effect transistor 430 and field effect transistor 440 all be in conducting state; make the current path that has discharge electrostatic charges between the input, output of described electrostatic protection device, play the effect of electrostatic protection.
Similarly, in other execution mode, by adopting more than two field effect transistor to connecting, so that the cut-in voltage of described electrostatic protection device to be provided, even described electrostatic protection device can bear higher electrostatic potential.For example, has identical cut-in voltage V with n
EsdField effect transistor to the series connection, can obtain cut-in voltage is n*V
EsdElectrostatic protection device.
Each execution mode of above-mentioned electrostatic protection device can be applicable to a plurality of positions of electronic device; for example for liquid crystal display; described electrostatic protection device can be installed between test bus and the LCD outer housing; the one end is connected with described test bus; the other end connects the shell of described liquid crystal display, discharges the electrostatic charge of gathering.
Embodiment of the present invention also provides a kind of electrostatic protection system of using described electrostatic protection device, and described electrostatic protection system is applied in the display unit, with reference to figure 6, comprises at least: wire 520, test bus 530, electrostatic protection device 550.Wherein, wire 520 connects each pixel cell and the test bus 530 that is used for demonstration; One end of electrostatic protection device 550 is connected with wire 520; other end connecting test bus 530 plays electrostatic protective function, and by applying suitable voltage to electrostatic protection device 550; it is opened or closure, realize disconnection or connection between each wire 520.
In the lump with reference to figure 1, described electrostatic protection system has replaced and has been used for realizing a plurality of in length and breadth esd protection circuits of setting of being connected between each wire and the short-circuited conducting sleeve around each pixel cell in the prior art, thereby the screen that has effectively dwindled between the framework 510 is wide.
Described electrostatic protection device and described electrostatic protection system can be applicable to the visual inspection test.With reference to figure 7, the display unit that comprises described electrostatic protection system is carried out in the process of visual inspection test, at first, step S1, apply the first test voltage, the display unit of described display unit and the electrostatic protection device between the test bus are opened, thereby each wire is interconnected by described electrostatic protection device; Secondly, step S2 by each wire of interconnection, carries out the visual inspection test to each pixel cell in the described display unit.Wherein, described the first test voltage is greater than the cut-in voltage of described electrostatic protection device, and the difference of described the first test voltage and described electrostatic protection device cut-in voltage is the verification test voltage that carries out the visual inspection test.
In a concrete execution mode, with reference to figure 8, described liquid crystal display comprises described electrostatic protection system, and every wire 820 of being drawn by display unit 810 is connected to test bus 840 by electrostatic protection device 830.
When described liquid crystal display is carried out visual inspection, apply a test voltage V who is enough to make described electrostatic protection device 830 to be opened at test board 850
Test, wherein, test voltage V
TestCut-in voltage V greater than described electrostatic protection device 830
EsdAt this moment, all wires 820 that are connected with test bus 840 by described electrostatic protection device 830 all are shorted together.The difference of described test voltage and described cut-in voltage, i.e. verification test voltage V
Op1=V
Test-V
Esd, be applied on the display unit 810, be used for carrying out verification test.
When described liquid crystal display normally shows, normal working voltage V
Op2Be applied on the display unit 810, and by the cut-in voltage of suitable electrostatic protection device 830 is set, make described normal working voltage V
Op2Cut-in voltage V much smaller than described electrostatic protection device 830
EsdThat is to say, at this moment, normal working voltage V
Op2Described electrostatic protection device 830 is opened, and the wire 820 that therefore connects each pixel cell can not occur interconnected, and each pixel cell of described liquid crystal display is independent of one another and can normally show.In specific embodiment, described verification test voltage V
Op1Can with described normal working voltage V
Op2Equate.
In a specific embodiment, the cut-in voltage V of described electrostatic protection device
EsdBe 30V, the normal working voltage that common IC chip is exported is 15V.When carrying out visual inspection, apply 45V voltage at test board, so that have the verification test voltage of 15V to put on display unit, for detection.And when normal the demonstration, the driving voltage 15V that the IC chip provides can't make described electrostatic protection device open, and all wires are independent of one another, and the IC chip can carry out driven.
Compared to existing electrostatic protection device, each execution mode of the present invention provides a kind of electrostatic protection device, effectively plays the effect of electrostatic protection with simple structure.And embodiment of the present invention also provides a kind of display unit electrostatic protection system of using described electrostatic protection device, has realized the fail safe short circuit of each parts, and the screen that has shortened described display unit is wide.In addition, described electrostatic protection system is applied to visual inspection test, by controlling the voltage on the described electrostatic protection device, realize its conducting and block, thereby the laser that has reduced in the conventional visualization check blows processing step, has reduced the complexity of technique.
Although by the preferred embodiment explanation as above, these preferred embodiments are not to limit the present invention in the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (21)
1. an electrostatic protection system is characterized in that, comprising: electrostatic protection device, wire and test bus;
Described electrostatic protection device comprises: the first field effect transistor and the second field effect transistor, and the grid of described the first field effect transistor is connected with the source electrode of its drain electrode and described the second field effect transistor, as the input of described electrostatic protection device; The grid of described the second field effect transistor is connected with the source electrode of its drain electrode and described the first field effect transistor, as the output of described electrostatic protection device;
Described wire connects each pixel cell and the described test bus that is used for demonstration;
One end of described electrostatic protection device is connected with described wire, is used for discharge electrostatic charges; The other end connects described test bus; by applying voltage to described electrostatic protection device; control opening or closure of field effect transistor described in the described electrostatic protection device; described electrostatic protection device also is used for connecting or disconnecting each wire and test bus, realizes the visual inspection to described each pixel cell.
2. electrostatic protection system as claimed in claim 1 is characterized in that, described the first field effect transistor has identical cut-in voltage with described the second field effect transistor.
3. electrostatic protection system as claimed in claim 2 is characterized in that, described the first field effect transistor has identical semiconductor parameter with described the second field effect transistor.
4. electrostatic protection system as claimed in claim 2 is characterized in that, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
5. electrostatic protection system as claimed in claim 4 is characterized in that, described cut-in voltage equals the threshold voltage of described field effect transistor.
6. electrostatic protection system as claimed in claim 5 is characterized in that, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
7. electrostatic protection system as claimed in claim 6 is characterized in that, described threshold voltage is 15V.
8. electrostatic protection system as claimed in claim 1 is characterized in that, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 18:6 to 6:6.
9. electrostatic protection system as claimed in claim 8 is characterized in that, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 16:6.
10. an electrostatic protection system is characterized in that, comprising: electrostatic protection device, wire and test bus;
Described electrostatic protection device comprises a plurality of field effect transistor that are connected in series pair, wherein, the right input of first field effect transistor is as the input of described electrostatic protection device, the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device; Each field effect transistor is to comprising the first field effect transistor and the second field effect transistor, the grid of described the first field effect transistor is connected with the source electrode of its drain electrode and described the second field effect transistor, as the right input of described field effect transistor, the grid of described the second field effect transistor is connected with the source electrode of its drain electrode and described the first field effect transistor, as the right output of described field effect transistor;
Described wire connects each pixel cell and the described test bus that is used for demonstration;
One end of described electrostatic protection device is connected with described wire, is used for discharge electrostatic charges; The other end connects described test bus; by applying voltage to described electrostatic protection device; control opening or closure of field effect transistor described in the described electrostatic protection device; described electrostatic protection device also is used for connecting or disconnecting each wire and test bus, realizes the visual inspection to described each pixel cell.
11. electrostatic protection system as claimed in claim 10 is characterized in that, described the first field effect transistor has identical cut-in voltage with described the second field effect transistor.
12. electrostatic protection system as claimed in claim 11 is characterized in that, described the first field effect transistor has identical semiconductor parameter with described the second field effect transistor.
13. electrostatic protection system as claimed in claim 11 is characterized in that, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
14. electrostatic protection system as claimed in claim 13 is characterized in that, described cut-in voltage equals the threshold voltage of described field effect transistor.
15. electrostatic protection system as claimed in claim 14 is characterized in that, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
16. electrostatic protection system as claimed in claim 15 is characterized in that, described threshold voltage is 15V.
17. electrostatic protection system as claimed in claim 10 is characterized in that, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 18:6 to 6:6.
18. electrostatic protection system as claimed in claim 17 is characterized in that, the breadth length ratio of described the first field effect transistor or described the second field effect transistor is 16:6.
19. an application is characterized in that such as the visual inspection testing method of electrostatic protection system as described in each in the claim 1 to 18, may further comprise the steps:
Apply the first test voltage, described electrostatic protection device is opened, thereby connect each wire and described test bus by described electrostatic protection device;
Apply test signal to each wire by described test bus, each pixel cell in the display unit is carried out the visual inspection test.
20. visual inspection testing method as claimed in claim 19 is characterized in that, described the first test voltage is greater than the cut-in voltage of described electrostatic protection device.
21. visual inspection testing method as claimed in claim 19 is characterized in that, the difference of described the first test voltage and described electrostatic protection device cut-in voltage equates with the normal working voltage of display unit.
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| CN103293795B (en) * | 2012-03-05 | 2016-02-17 | 上海中航光电子有限公司 | A kind of electrostatic discharge protection circuit of liquid crystal display |
| CN103278723B (en) * | 2013-03-19 | 2016-06-15 | 深圳市华星光电技术有限公司 | The detecting device of electrostatic protection chip |
| CN104112426B (en) * | 2014-06-30 | 2016-08-24 | 上海天马有机发光显示技术有限公司 | A kind of OLED pixel drive circuit, static release protection circuit and detection method |
| CN105045007B (en) * | 2015-08-18 | 2019-05-24 | 深圳市华星光电技术有限公司 | A kind of liquid crystal display panel |
| CN105404035A (en) * | 2015-12-08 | 2016-03-16 | 昆山龙腾光电有限公司 | Liquid crystal display panel |
| CN110488547B (en) * | 2019-09-03 | 2022-06-21 | 业成科技（成都）有限公司 | Display panel |
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| CN1815305A (en) * | 2005-02-02 | 2006-08-09 | 精工爱普生株式会社 | Electronics device, optical panel, inspection probe, inspection device for the optical panel and inspection method for the optical panel |
| CN101231439A (en) * | 2007-01-12 | 2008-07-30 | 三星电子株式会社 | Display panel, method of inspecting the display panel and method of manufacturing the display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1815305A (en) * | 2005-02-02 | 2006-08-09 | 精工爱普生株式会社 | Electronics device, optical panel, inspection probe, inspection device for the optical panel and inspection method for the optical panel |
| CN101231439A (en) * | 2007-01-12 | 2008-07-30 | 三星电子株式会社 | Display panel, method of inspecting the display panel and method of manufacturing the display panel |
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